CN101915749A - Reflection sensor based on metal double-gate structure - Google Patents

Reflection sensor based on metal double-gate structure Download PDF

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Publication number
CN101915749A
CN101915749A CN201010235439.4A CN201010235439A CN101915749A CN 101915749 A CN101915749 A CN 101915749A CN 201010235439 A CN201010235439 A CN 201010235439A CN 101915749 A CN101915749 A CN 101915749A
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metal
grid
double
wave
reflection sensor
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CN101915749B (en
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王慧田
许吉
程晨
陈璟
丁剑平
樊亚仙
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Nanjing University
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Nanjing University
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Abstract

The invention discloses a reflection sensor based on a metal double-gate structure. The reflection sensor comprises two identical metal gates which are arranged oppositely and parallelly and a substrate prepared from dielectric material, wherein the two metal gates are separately embedded on the dielectric material substrate; and a liquid-holding part is formed between the two metal gates and used for holding a sample solution to be tested. The grating period of the metal gates is less than the wavelength of working electromagnetic wave, and the width of the slits on the metal gates is less than the half of wavelength of the working electromagnetic wave and more than one tenth of the grating period. The invention adopts the mode that the light source is provided in an inclined incidence manner, thus the measurement of the reflection coefficient can be more convenient. The reflected wave does not pass through the sensor and the sample solution, the interference by the structure and material of the element is less, and the measurement is more accurate. By using the reflective design, the experiment can be operated more easily and conveniently. By using the design of double metal gates, the sensitivity of the structure is far higher than that of other structures.

Description

Reflection sensor based on metal double-gate structure
Technical field
What the present invention relates to is a kind of reflective index sensor, in particular a kind of reflection sensor based on metal double-gate structure.
Background technology
Surface phasmon (SPP) resonance is widely used in the optical sensing technology the high susceptibility that the interfacial refraction rate changes because of it, so the optical device of this class novelty of surface plasmon resonance sensor has been suggested, all has important use in fields such as pharmaceutical sector, water security detection and medical diagnosiss and be worth.
The surface plasmon resonance sensor relates to an important physical process, and promptly exciting of surface phasmon mainly contains two kinds of technology of prism-coupled and grating coupling.E.Kretschmann is at Z.Naturforsch23A, in " Radiative decay ofnon-radiative surface plasmons excited by light (attenuation of light activated non-radiative surface plasma) " literary composition of delivering on the 2135-2136 (1968) (natural science magazine) Ke Ruiqiman (Kretschmann) configuration has been proposed, this configuration is most commonly used to the surface plasmon resonance sensor based on prism-coupled, has higher sensitivity and meticulousr detection limit.Its shortcoming is: the structure fabrication difficulty, volume is big, is difficult to realize integrated.People such as J.Homola are at Sensors and Actuators B 54, the work of delivering on 16 (1999) (sensor and the driver B) " Surface plasmon resonance sensors based on diffraction gratings andprism couplers:sensitivity comparison (based on the surface plasmon resonance sensor of diffraction grid and prism-coupled: remolding sensitivity) ", with people such as Jakub Dost á lek at Sensors andActuators B 107, the work of delivering on 154 (2008) (sensor and the driver B) " Richinformation format surface plasmon resonance biosensor based on array ofdiffraction gratings (based on the surface plasmon resonance biology sensor with abundant information form of diffraction grid array) ", they propose a kind of based on grating coupled surface plasmon resonance sensor respectively, this class surface plasmon resonance sensor construction is made simple relatively, and volume Xiao Yi realizes integrated.But sensitivity has but descended greatly.
In recent years, along with the appearance of the various structures of excitating surface phasmon, many novel surface plasmon resonance sensor configuration are suggested, to improve detection sensitivity or to be detection limit.For example, in the configuration based on prism, people utilize the long-distance surface phasmon transmission mode of optimizing to improve sensitivity by the metal-dielectric material sandwich construction; In the configuration based on surface micro-structure, grid structure and nanoparticle array structure are designed to support the surface phasmon pattern of local, and they can be integrated in the light path very effectively; Other has some configurations based on waveguide, and side polishing fiber configuration also has been suggested.
Great majority all depend on single-layer metal-dielectric interfaces (smooth or structure is arranged) surface phasmon and excite in above-mentioned these configurations, optimize the surface phasmon pattern then to realize surveying or the purpose of sensing.The deficiency of its existence is to realize simultaneously that material selection and structure fabrication are simple, and structural volume Xiao Yi realizes integrated, and experimental implementation is simple, and obtains higher sensitivity.And that the applicant has designed a kind of material selection is simple, and structure is easily made, the reflection sensor based on metal double-gate structure that the little easy realization of structural volume is integrated.Its reflective design makes experimental implementation more simple and convenient, and the structural design of double-level-metal grid is novel more, and the physical mechanism that relates to is also abundanter, and can obtain higher relatively angle sensitivity.
Summary of the invention
Goal of the invention: the objective of the invention is to overcome the deficiencies in the prior art, a kind of reflection sensor based on metal double-gate structure is provided, testing sample solution is filled in the Sheng liquid portion between two grid, utilize laser instrument that the p-plane of polarization ripple of oblique incidence is provided, detector is surveyed reflection wave, and then realizes the measurement to the refractive index of sample solution.
Technical scheme: the present invention is achieved by the following technical solutions, the present invention includes two-layer over against be arranged in parallel entirely with metal gate and the substrate made by dielectric material, wherein: the double layer of metal grid are embedded on the substrate respectively; Form to contain liquid portion between the double layer of metal grid, the grid cycle of metal gate is less than the wavelength of working electromagnet ripple, and the width of slit is less than long half of working electromagnet wave-wave and more than or equal to 0.1 times of grid cycle on the metal gate.
Described metal gate is a silver (Ag), and gold (Au) or aluminium low-loss metal such as (Al) are made.
Principle of work of the present invention is: at first, and calibration on theory is calculated: the structural parameters of calculating corresponding optimum according to electromagnetic wavelength and testing sample solution index meter.Search out corresponding zero reflection coefficient incident angle for different sample solution refractive indexes by calculating, thereby find the one-to-one relationship of incident angle and refractive index.Then, carry out concrete experimental implementation according to calibration.Perhaps, also can be earlier that structure fabrication is good, calibrate with standard solution.Sample solution fills in the Sheng liquid portion between two grid.Laser instrument or other types light source provide the plane wave of variable-angle, obtain the p-polarized wave by polaroid.Detector receives reflection wave, changes incident angle and measures corresponding reflection coefficient, searches out the incident angle of corresponding zero reflection coefficient.According to the Theoretical Calculation or the contrasting data of standard solution calibration, determine the refractive index of sample solution.This sensor can be used to measure the refractive index of unknown sample solution, the refractive index value before and after perhaps sample solution changes.
Beneficial effect: the present invention has designed the reflection sensor of the simple relatively double-level-metal grid configuration of a kind of structure.With the incident angle calibration, i.e. oblique incidence provides the mode of light source, is beneficial to the measurement reflection coefficient more.Reflection wave is without sensor and sample solution itself, and the interference of suffered device architecture and material is less, measures more accurate.Reflective design makes experimental implementation also more simple and convenient.Double-level-metal grid structure Design, make the total device that the participation of surface phasmon evanescent field not only be arranged in the course of the work, related to the Fabry POLO chamber resonance effects between the double-deck grid more, the existence of the coexistence of the two and the effect of vying each other makes the sensitivity of this structure will be higher than some other configuration far away.
Description of drawings
Fig. 1 is a structural representation of the present invention;
Wherein: d is the grid cycle of two grid, and h is the thickness of two grid, and a is the width of the slit of two grid, and G is the interlamellar spacing of two grid, n 1Be the refractive index of substrate, h sBe the thickness of grid outside substrate, n 2It is the refractive index of testing sample solution;
Fig. 2 be the present invention under different electromagnetic wave situations, during corresponding different spacing, during the sample solution variations in refractive index, the reflection coefficient under the different incidence angles degree, wherein: (a) being the situation of 770nm operation wavelength, (b) is the situation of 768nm operation wavelength.
Embodiment
Below embodiments of the invention are elaborated, present embodiment is being to implement under the prerequisite with the technical solution of the present invention, provided detailed embodiment and concrete operating process, but protection scope of the present invention is not limited to following embodiment.
As shown in Figure 1, present embodiment comprise two-layer over against be arranged in parallel entirely with metal gate 1 grid and the substrate 2 made by dielectric material, wherein: double layer of metal grid 1 grid are embedded in respectively on the dielectric material substrate 2, material is consistent with the material of substrate 2 in the slit; Gap between the grid of double layer of metal grid 1 forms the liquid portion 3 of containing naturally, and the grid cycle of metal gate 1 is less than the wavelength of working electromagnet ripple, and the width of slit is less than long half of working electromagnet wave-wave and more than or equal to 0.1 times of grid cycle on metal gate 1 grid.
In the present embodiment, light source 4 provides the p-plane of polarization ripple of oblique incidence, and detector 5 is surveyed reflection waves, and testing sample solution fills in the Sheng liquid portion 3 on the spacing of double layer of metal grid 1 grid, and then carries out the measurement of sample solution refractive index.
Described two-layer full thickness with metal gate 1 satisfies condition, and makes its zero level waveguide mode wavelength be slightly less than the wavelength of working electromagnet ripple, and promptly working electromagnet wave-wave length is slightly larger than the waveguide mode wavelength of single grid.
Described two-layer entirely with there being spacing G between the metal gate 1, the selection of spacing G satisfies condition and makes evanescent field coupling effect and the coexistence of Fabry POLO chamber resonance effects in the double-deck grid structure compete, so that when the solution refractive index in the two grid spacings changes, the working electromagnet ripple is with different incident angle incident, for the situation of 0 reflectivity higher angle sensitivity response arranged.
Described reflective index sensor based on metal gate 1 double-gate structure needs calibration on theory is calculated earlier: the structural parameters of calculating corresponding optimum according to electromagnetic wavelength and institute's test sample product solution index meter.Search out corresponding zero reflection coefficient incident angle for different sample solution refractive indexes by calculating, thereby find the one-to-one relationship of incident angle and refractive index.And then carry out concrete experimental implementation according to calibration.Also can be earlier that structure fabrication is good, calibrate with standard solution.
In the present embodiment, the corresponding structure parameter is respectively, grid cycle d=400nm, grid slit width a=40nm, grid thickness h=140nm, the thickness h of grid outside substrate s=0.
Double layer of metal grid 1 grid are made by silver (Ag) in the present embodiment, and dielectric material substrate 2 is magnesium fluoride (MgF 2) make.
In the present embodiment, the waveguide mode wavelength of two grid correspondences is 762nm, and working electromagnet wave-wave length should can be chosen 770nm, 768nm etc. greater than this wavelength.
The operation of this structure is carried out near infrared to visible light wave range mostly, and operation wavelength is less in this wave band, and corresponding values of the structural parameters is less, and the preparation accuracy requirement is higher relatively.The preparation of metal gate 1 film can adopt technology such as magnetron sputtering to realize being deposited on the substrate 2, and the preparation of grid structure can adopt focused-ion-beam lithography (FIB) to realize on the metal gate 1.On this structure, carry out the deposition of substrate 2 dielectric materials again, can realize the filling of substrate 2 in the grid slit.At this moment, metal gate 1 will be embedded within the substrate dielectric material fully.Utilize technologies such as mechanical buffing, can as required the substrate on metal gate 1 grid 2 be removed or reach desired thickness.
As shown in Figure 2, two instantiations that go out with Finite-Difference Time-Domain Method (FDTD) calculating analog computation have been provided.(a) being the situation of 770nm operation wavelength, (b) is the situation of 768nm operation wavelength.Under each operation wavelength, all provided the comparison of the situation of large, medium and small three different spacing.Three different sample solution refractive index value that solid line among the figure, dotted line, dotted line have been distinguished correspondence.Arrow has marked the incident angle value of corresponding zero reflection coefficient under each situation among the figure.Utilize the computing formula S=angle changing value/variations in refractive index value of angle sensitivity, can calculate the angle sensitivity under each situation.Under the situation of 768nm operation wavelength, during for the distance values of 310nm, corresponding angle sensitivity can reach 500 °/RIU (500 degree/refractive index unit).This Sensitirity va1ue is far longer than the sensitivity of existing many surface plasmon resonance sensors, and corresponding distance values promptly is optimum distance values.Choose appropriate structural parameters and operation wavelength, measure the incident angle value of zero reflection coefficient correspondence, according to calibration the standard just refractive index value or the variations in refractive index value of derived sample solution.

Claims (4)

1. reflection sensor based on metal double-gate structure is characterized in that: comprise two-layerly over against complete same metal gate (1) that is arranged in parallel and the substrate (2) made by dielectric material, wherein: double layer of metal grid (1) are embedded in respectively on the substrate (2); Form to contain liquid portion (3) between the double layer of metal grid (1), the grid cycle of metal gate (1) is less than the wavelength of working electromagnet ripple, and the width that metal gate (1) is gone up slit is less than long half of working electromagnet wave-wave and more than or equal to 0.1 times of grid cycle.
2. the reflection sensor based on metal double-gate structure according to claim 1 is characterized in that: described metal gate (1) is that silver (Ag), gold (Au) or aluminium (Al) are made.
3. the reflection sensor based on metal double-gate structure according to claim 1 is characterized in that: described substrate (2) is magnesium fluoride (MgF 2) make.
4. the reflection sensor based on metal double-gate structure according to claim 1 is characterized in that: single lattice wave guided mode formula wavelength of described metal gate (1) is long less than the working electromagnet wave-wave.
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104359500A (en) * 2014-11-04 2015-02-18 北京泺喜文化传媒有限公司 Sensor with memory
CN105547337A (en) * 2015-12-23 2016-05-04 上海大学 MIM annular notch groove structure sensor
CN110793936A (en) * 2018-08-01 2020-02-14 中国科学院苏州纳米技术与纳米仿生研究所 Sensor based on grating slit waveguide composite structure

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CN101187708A (en) * 2007-10-25 2008-05-28 南京大学 Controllable electromagnetic wave transmittance structure based on sub-wave length metal double gratings and its preparation method
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CN101915964A (en) * 2010-07-20 2010-12-15 南京大学 Optical diode based on asymmetrical metal double-gate structure

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US20080316490A1 (en) * 2007-06-19 2008-12-25 National Tsing Hua University Planar surface plasmon resonance detector
CN101187708A (en) * 2007-10-25 2008-05-28 南京大学 Controllable electromagnetic wave transmittance structure based on sub-wave length metal double gratings and its preparation method
CN101915964A (en) * 2010-07-20 2010-12-15 南京大学 Optical diode based on asymmetrical metal double-gate structure

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104359500A (en) * 2014-11-04 2015-02-18 北京泺喜文化传媒有限公司 Sensor with memory
CN105547337A (en) * 2015-12-23 2016-05-04 上海大学 MIM annular notch groove structure sensor
CN105547337B (en) * 2015-12-23 2018-05-01 上海大学 MIM annular groove structure sensors
CN110793936A (en) * 2018-08-01 2020-02-14 中国科学院苏州纳米技术与纳米仿生研究所 Sensor based on grating slit waveguide composite structure
CN110793936B (en) * 2018-08-01 2021-07-23 中国科学院苏州纳米技术与纳米仿生研究所 Sensor based on grating slit waveguide composite structure

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