CN101915546A - Solar chip anti-reflection coating detection method and detection device thereof - Google Patents

Solar chip anti-reflection coating detection method and detection device thereof Download PDF

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Publication number
CN101915546A
CN101915546A CN 201010219981 CN201010219981A CN101915546A CN 101915546 A CN101915546 A CN 101915546A CN 201010219981 CN201010219981 CN 201010219981 CN 201010219981 A CN201010219981 A CN 201010219981A CN 101915546 A CN101915546 A CN 101915546A
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reflecting layer
solar chip
unit
image
thickness
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CN101915546B (en
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王琼姿
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LIHUA TECHNOLOGY Co Ltd
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LIHUA TECHNOLOGY Co Ltd
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Abstract

The invention discloses a solar chip anti-reflection coating detection method and a detection device thereof. A white light source is projected onto a solar chip to be detected, and a camera unit is utilized to acquire an image of the solar chip, so as to generate an image data, then the chromaticity of the image data is analyzed, the image data can be divided into a plurality of image units in the analyzing process, and the chromaticity analyzing is respectively carried out on each image unit or on partial image units, so as to calculated the thickness of anti-reflection coating in each image unit or in partial image units, thus rapidly completing measurement on the thickness of anti-reflection coating on solar chip.

Description

The detection method of the anti-reflecting layer of solar chip and pick-up unit
Technical field
The present invention relates to a kind of detection method and pick-up unit of anti-reflecting layer of solar chip, can finish the measurement of the anti-reflecting layer thickness on the solar chip fast.
Background technology
Along with the platform of lifting of the scarcity of earth resources and environmental protection subject under discussion, countries in the world are perceived the urgency of the new substitute energy of development gradually, and wherein solar electrical energy generation is a technology that is expected most.The solar chip battery probably can be divided into silicon wafer solar cell and thin-film solar cells according to the difference of technology, and the city of present silicon wafer solar cell accounts for rate and is about more than 80%.
See also Fig. 1, be the organigram of existing solar chip.As shown in the figure, solar chip 10 mainly includes a N-type semiconductor material 11, a P-type semiconductor material 13 and an anti-reflecting layer 15, wherein N-type semiconductor material 11 and P-type semiconductor material 13 are with the overlapped way setting, and anti-reflecting layer 15 then is arranged on N-type semiconductor material 11 surfaces.
When using the penetrable anti-reflecting layer 15 of sunshine and be incident upon N-type semiconductor material 11 and/or P-type semiconductor material 13 on, can allow more light sources enter semiconductor material 11/13 by being provided with of anti-reflecting layer 15, and help improving the efficient that solar chip 10 produces electric energy.When light source irradiation during at sun chip 10, electronegative electronics will move toward the surface of N-type semiconductor material 11 in the solar chip 10, and can be arranged on conductor wire 17 on the N-type semiconductor material 11 with its derivation, the electric hole of positively chargeds then can be moved toward the surface of P-type semiconductor material 13 in the solar chip 10, and can be further to be arranged on conductor wire 19 on the P-type semiconductor material 13 with its derivation.
Anti-reflecting layer 15 is mainly made by an insulating material, and the thickness of anti-reflecting layer 15 can impact the ratio of the light source that imports solar chip 10.Generally when the thickness of the anti-reflecting layer 15 of solar chip 10 is measured, mainly be the thickness of analyzing anti-reflecting layer 15 by destructive scanning type electron microscope (SEM), yet this measuring method not only efficient is not good, more can't detect in on-line automaticization of product.
Summary of the invention
Fundamental purpose of the present invention, be to provide a kind of detection method of anti-reflecting layer of solar chip, mainly a white light source is incident upon on the solar chip, and be colourity with the color conversion of solar chip, can further extrapolate the thickness of the anti-reflecting layer on the solar chip whereby with colourity.
Secondary objective of the present invention, be to provide a kind of detection method of anti-reflecting layer of solar chip, mainly solar chip is carried out the acquisition of image and obtains an image data, and image data is distinguished into a plurality of image units, then again the RGB numerical value on each or the partial image unit is transformed into the color space of HSV, to learn the colourity of each or partial image unit, will extrapolate the thickness of the anti-reflecting layer of solar chip by the colourity of each or partial image unit whereby.
Another purpose of the present invention, be to provide a kind of detection method of anti-reflecting layer of solar chip, mainly solar chip is carried out the acquisition of image and obtains an image data, and each or partial pixel on this image data analyzed, with the thickness of the anti-reflecting layer of learning solar chip.
Another purpose of the present invention, be to provide a kind of detection method of anti-reflecting layer of solar chip, wherein the colourity of the thickness of the anti-reflecting layer on the solar chip and image unit (anti-reflecting layer) presents the relation of quadratic power inverse ratio approximately, and can be learnt the thickness of the anti-reflecting layer of solar chip by colourity.
Another purpose of the present invention, be to provide a kind of pick-up unit of anti-reflecting layer of solar chip, mainly solar chip is carried out the acquisition of image by image unit, and the RGB numerical value of each or partial pixel of image data is transformed into the color space of HSV with arithmetic element, then again the colourity on each or the partial pixel is carried out computing, with the thickness of each regional anti-reflecting layer of learning solar chip.
Another purpose of the present invention, be to provide a kind of pick-up unit of anti-reflecting layer of solar chip, image unit can be arranged on the path of solar chip conveying, and solar chip is carried out the acquisition of image, then with arithmetic element obtained image data is analyzed again, can carry out the detection of anti-reflecting layer thickness in on-line automaticization of product whereby, and help improving the efficient of detection.
Another purpose of the present invention, be to provide a kind of pick-up unit of anti-reflecting layer of solar chip, can learn whether the thickness of the anti-reflecting layer on the single solar chip is even by the result who detects, and further different solar chips be classified according to the result who detects.
In order to achieve the above object, the invention provides a kind of detection method of anti-reflecting layer thickness of solar chip, include following steps: a solar chip is carried out image capture, and produce an image data, wherein the solar chip surface is provided with an anti-reflecting layer; Image data is distinguished into a plurality of image units, and obtains the colourity of image unit; Reach the thickness of extrapolating anti-reflecting layer by the colourity of image unit.
In order to achieve the above object, the present invention also provides a kind of pick-up unit of anti-reflecting layer thickness of solar chip, includes: an image unit, in order to a solar chip is carried out image capture, and produce an image data, wherein the solar chip surface is provided with an anti-reflecting layer; And an arithmetic element, receive image data by image unit, and image data is distinguished into a plurality of image units, and obtain the colourity of image unit, then extrapolate the thickness of anti-reflecting layer again by the colourity of image unit.
Effect of the present invention is, because the colourity of the image unit in the image data is relevant with the thickness of anti-reflecting layer, for example when the anti-reflecting layer of solar chip is Silicon Nitride (silicon nitride), the colourity of the thickness of anti-reflecting layer and image unit (anti-reflecting layer) presents the relation of quadratic power inverse ratio approximately, therefore the thickness of anti-reflecting layer and the relational expression or the graph of a relation of colourity can be included in the arithmetic element, the thickness of anti-reflecting layer of each or subregion of solar chip can be extrapolated by the colourity of each or partial image unit whereby.
Describe the present invention below in conjunction with the drawings and specific embodiments, but not as a limitation of the invention.
Description of drawings
Fig. 1 is the organigram of existing solar chip;
Fig. 2 is the flow chart of steps of detection method of anti-reflecting layer of the solar chip of one embodiment of the invention;
Fig. 3 is the synoptic diagram of the image data of one embodiment of the invention;
Fig. 4 is the anti-reflecting layer thickness of one embodiment of the invention and the graph of a relation of colourity;
Fig. 5 is the organigram of pick-up unit of anti-reflecting layer of the solar chip of one embodiment of the invention;
Fig. 6 is the Wavelength distribution figure of white light source of the pick-up unit of one embodiment of the invention.
Wherein, Reference numeral
10 solar chip 11N N-type semiconductor N materials
13P N-type semiconductor N material 15 anti-reflecting layers
17 conductor wires, 19 conductor wires
30 image datas, 31 image units
40 pick-up units, 41 supply units
43 image units, 45 arithmetic elements
47 luminescence units, 49 detecting units
Embodiment
Below in conjunction with accompanying drawing structural principle of the present invention and principle of work are done concrete description:
See also Fig. 2, be the flow chart of steps of detection method one embodiment of the anti-reflecting layer of solar chip of the present invention.And please consult Fig. 1 and Fig. 3 simultaneously, general solar chip 10 surfaces can be provided with an anti-reflecting layer 15, the present invention is mainly in order to carry out the acquisition of image to solar chip 10, to learn the color of solar chip 10, again the color of solar chip 10 is analyzed afterwards, with the thickness of the anti-reflecting layer 15 of learning solar chip 10.
Can carry out the acquisition of image to solar chip 10 earlier in use, and produce the image data 30 of a solar chip 10, shown in step 21, when this step is carried out, white light source can be incident upon on the anti-reflecting layer 15 of solar chip 10, and the one side that solar chip 10 is provided with anti-reflecting layer 15 is made a video recording.
When image data 30 is analyzed, image data 30 can be distinguished into a plurality of image units 31, and further obtain the colourity (Hue) on each or the partial image unit 31, shown in step 23.In a preferred embodiment of the present invention, can learn the color of each or partial image unit 31 by image data 30, RGB numerical value as each or partial image unit 31, then again the RGB numerical value of each or partial image unit 31 is transformed into the color space of HSV (Hue colourity, Saturation saturation degree, Value brightness), to obtain the colourity of each or partial image unit 31.
Image data 30 can be the numerical data by digital camera captured, wherein image data 30 is made up of a plurality of pixels (pixel), and image unit 31 can include at least one pixel, for example image unit 31 can be made of single pixel, and can be directly the RGB numerical value of each or partial pixel of image data 30 be transformed into the color space of HSV, to learn the colourity of each or partial pixel.
Image unit 31 also can be made of a plurality of pixel in different embodiment, and then the colourity of image unit 31 then can be colourity average of a plurality of pixels.In addition, when including a plurality of pixel in the image unit 31, also can only inspect by random samples each or partial image unit 31 interior one of them pixel, and represent the colourity of this image unit 31 with the colourity of the pixel that obtains, can inspect by random samples each or part block of the anti-reflecting layer 15 of solar chip 10 whereby, for example image data 30 can be distinguished into a plurality of image units 31, as solar chip 10 is distinguished into a plurality of blocks, and only obtain the colourity of single pixels in each or the partial image unit 31.
By the above embodiment of the present invention as can be known image data 30 include a plurality of image units 31, and can analyze, with the thickness of the anti-reflecting layer 15 of learning solar chip 10 all image units 31 in the image data 30.Yet when actual the detection, also can detect, but select the image unit 31 of part in the image data 30 to detect in the mode of sampling observation to all image units 31 in the image data 30.
After the colourity of learning image unit 31, can be further extrapolate the thickness of anti-reflecting layer 15, shown in step 25 by the colourity of each or partial image unit 31.Anti-reflecting layer 15 mainly is arranged on semiconductor material 11/13 surface, can allow more light source enter solar chip 10 by being provided with of anti-reflecting layer 15, to improve the efficient that solar chip 10 produces electric energy.The thickness of anti-reflecting layer 15 in addition also can impact the quantity of the light source that imports solar chip 10, therefore often needs the thickness of antagonistic reflex layer 15 to detect when producing solar chip 10.
When the semiconductor material 11/13 of solar chip 10 identical, and when the material of anti-reflecting layer 15 also is identical, the thickness of anti-reflecting layer 15 will be relevant with the color of solar chip 10, for example when the anti-reflecting layer 15 of solar chip 10 is Silicon Nitride (silicon nitride), the colourity of the thickness of anti-reflecting layer 15 and image unit 31 (anti-reflecting layer 15) presents the relation of quadratic power inverse ratio, curvilinear figure as shown in Figure 4 approximately.Therefore, after the colourity of each in learning image data 30 or partial image unit 31, just can further extrapolate the thickness of the anti-reflecting layer 15 of solar chip 10.
In addition in embodiments of the present invention, the RGB numerical value of each or partial image unit 31 can be transformed into the color space of HSV, to learn the colourity of each or partial image unit 31, to help whereby improving the accuracy of calculating anti-reflecting layer 15 thickness, and can get rid of the influence of saturation degree and/or brightness.
Image data 30 can be divided into a plurality of image units 31 in the analytical procedure, and respectively each or partial image unit 31 is analyzed.Because image data 30 is the actual image of solar chip 10, therefore image data 30 is divided into a plurality of image units 31, just as solar chip 10 is distinguished into a plurality of blocks, and each or part block are analyzed respectively.In addition, analyze by each or partial image unit 31 image data 30, can extrapolate the thickness of anti-reflecting layer 15 of each or part block of actual solar chip 10, and whether the thickness of learning single the anti-reflecting layer 15 on the solar chip 10 is even, to finish the detection to solar chip 10.
By the detection method of the anti-reflecting layer of above-mentioned solar chip and the application of pick-up unit, can learn the thickness of the anti-reflecting layer 15 on the solar chip 10, and whether the thickness of anti-reflecting layer 15 of each or subregion that can further learn single solar chip 10 is even, or whether the thickness of anti-reflecting layer 15 of learning different solar chips 10 is close, then according to the thickness or the testing result of anti-reflecting layer 15 solar chip 10 is classified again, shown in step 27.
See also Fig. 5, be the organigram of pick-up unit one embodiment of the anti-reflecting layer of solar chip of the present invention.And please consult Fig. 1 and Fig. 3 simultaneously, as shown in the figure, general solar chip 10 surfaces can be provided with an anti-reflecting layer 15, pick-up unit 40 mainly includes an image unit 43 and an arithmetic element 45, can produce the thickness of the anti-reflecting layer 15 of on-line automaticization detection solar chip 10 by the use of pick-up unit 40.
Image unit 43 is mainly in order to make a video recording to solar chip 10, to produce an image data 30.Pick-up unit 40 can include a supply unit 41 in an embodiment of the present invention, can be in order to carry out the conveying of solar chip 10, image unit 43 then is arranged on the supply unit 41, and in course of conveying, the solar chip on the supply unit 41 10 is made a video recording, can produce the detection that on-line automaticization carried out anti-reflecting layer 15 whereby.Certainly pick-up unit 40 also can not include this supply unit 41 in another embodiment of the present invention, can image unit be made a video recording by solar chip 10 equally, and further the thickness of the anti-reflecting layer on the solar chip 10 15 is detected.
Supply unit 41 is a conveying belt in the present invention is graphic, yet supply unit 41 also can be various multi-form supply units in different embodiment, and for example supply unit 41 mode that can push is carried out the conveying of solar chip 10.In addition, image unit 43 can be a type image unit or a line style image unit, all can finish the step that solar chip 10 is made a video recording.
When making a video recording, mainly a white light source L is incident upon on the solar chip 10, and receives the light source of 10 reflections of solar chip or scattering, to finish the action of shooting with image unit 43 by luminescence unit 47 with 43 pairs of solar chips 10 of image unit.In general, the Wavelength distribution of the white light source L that luminescence unit 47 is produced, tend to the color of the obtained image data 30 of image unit 43 is impacted, therefore pick-up unit 40 also can include a detecting unit 49 when practical application, can be in order to receive white light source L that luminescence unit 47 produced and to detecting, for example the Wavelength distribution situation of white light source L is analyzed, whether change with the Wavelength distribution of learning white light source L, and judge further whether luminescence unit 47 still can continue to use.Certainly in different embodiment, also can be provided with detecting unit 49, and the luminescence unit 47 that in the normal tenure of use of luminescence unit 47, more renews.
In one embodiment of the invention, luminescence unit 47 can be a light emitting diode, the Wavelength distribution of the white light source L that it produced as shown in Figure 6, wavelength mainly is distributed in about 450nm and 670nm.Certainly when practical application, also can use the different white light source L of Wavelength distribution situation to throw light on, can make a video recording by 45 pairs of solar chips 10 of image unit equally, and the thickness of the anti-reflecting layer on the solar chip 10 15 is measured.
Arithmetic element 45 is online with image unit 43, and can receive image data 30 by image unit 43.Arithmetic element 45 can be analyzed in order to the image data 30 that butt joint is received, in the process of analyzing, image data 30 can be distinguished into a plurality of image units 31, and learn the colourity of each or partial image unit 31 by image data 30, for example can obtain the RGB numerical value of each or partial image unit 31 by image data 30, and the RGB numerical value of image unit 31 is transformed into the color space of HSV, to learn the colourity of each or partial image unit 31.
Image unit 43 can be CCD (Charge Coupled Device charge-coupled image sensor) or CMOS (Complementary Metal-Oxide Semiconductor CMOS (Complementary Metal Oxide Semiconductor) conductor device) in an embodiment of the present invention, 30 of image datas are formed by a numerical data and by a plurality of pixels, and above-mentioned image unit 31 is then formed by single pixel or by a plurality of pixel.
Because the colourity of the image unit 31 in the image data 30 is relevant with the thickness of anti-reflecting layer 15, for example when the anti-reflecting layer 15 of solar chip 10 is Silicon Nitride (silicon nitride), the colourity of the thickness of anti-reflecting layer 15 and image unit 31 (anti-reflecting layer 15) presents the relation of quadratic power inverse ratio, curvilinear figure as shown in Figure 4 approximately.Therefore the thickness of anti-reflecting layer 15 and the relational expression or the graph of a relation of colourity can be included in the arithmetic element 43, the thickness of anti-reflecting layer 15 of each or subregion of solar chip 10 can be extrapolated by the colourity of each or partial image unit 31 whereby.
Certainly; the present invention also can have other various embodiments; under the situation that does not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art work as can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection domain of the appended claim of the present invention.

Claims (13)

1. the detection method of the anti-reflecting layer thickness of a solar chip is characterized in that, includes following steps:
One solar chip is carried out image capture, and produce an image data, wherein this solar chip surface is provided with an anti-reflecting layer;
This image data is distinguished into a plurality of image units, and obtains the colourity of this image unit; And
Extrapolate the thickness of this anti-reflecting layer by the colourity of this image unit.
2. the detection method of the anti-reflecting layer thickness of solar chip according to claim 1 is characterized in that, this image data is made up of many pixels, and this image unit includes at least one pixel.
3. the detection method of the anti-reflecting layer thickness of solar chip according to claim 1 is characterized in that, includes following steps:
Obtain the RGB numerical value of this image unit;
The RGB numerical value of this image unit is transformed into the color space of HSV.
4. the detection method of the anti-reflecting layer thickness of solar chip according to claim 1 is characterized in that, the thickness of this anti-reflecting layer and the colourity of this image unit are the relation that is the quadratic power inverse ratio.
5. the detection method of the anti-reflecting layer thickness of solar chip according to claim 1 is characterized in that, this anti-reflecting layer is a silicon nitride.
6. the pick-up unit of the anti-reflecting layer thickness of a solar chip is characterized in that, includes:
One image unit in order to a solar chip is carried out image capture, and produces an image data, and wherein this solar chip surface is provided with an anti-reflecting layer; And
One arithmetic element receives this image data by this image unit, and this image data is distinguished into a plurality of image units, and obtains the colourity of this image unit, is then extrapolated the thickness of this anti-reflecting layer again by the colourity of this image unit.
7. the pick-up unit of the anti-reflecting layer thickness of solar chip according to claim 6, it is characterized in that, include a supply unit in order to carry this solar chip, this image unit then is arranged on this supply unit, and in order to the solar chip on this supply unit is made a video recording.
8. the pick-up unit of the anti-reflecting layer thickness of solar chip according to claim 6 is characterized in that, this image data is made up of many pixels, and this image unit includes at least one pixel.
9. the pick-up unit of the anti-reflecting layer thickness of solar chip according to claim 6 is characterized in that, this arithmetic element obtains the RGB numerical value of this image unit, and in order to the RGB numerical value of this image unit is transformed into the color space of HSV.
10. the pick-up unit of the anti-reflecting layer thickness of solar chip according to claim 9 is characterized in that, includes a luminescence unit in order to throw a white light source to this solar chip.
11. the pick-up unit of the anti-reflecting layer thickness of solar chip according to claim 10 is characterized in that, includes a detecting unit in order to the white light source that this lighting source produced is detected.
12. the pick-up unit of the anti-reflecting layer thickness of solar chip according to claim 6 is characterized in that, the thickness of this anti-reflecting layer and the colourity of this image unit are the relation that is the quadratic power inverse ratio.
13. the pick-up unit of the anti-reflecting layer thickness of solar chip according to claim 6 is characterized in that, this anti-reflecting layer is a silicon nitride.
CN 201010219981 2010-07-01 2010-07-01 Solar chip anti-reflection coating detection method and detection device thereof Expired - Fee Related CN101915546B (en)

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CN103185721A (en) * 2011-12-31 2013-07-03 致茂电子股份有限公司 Optical detection system
CN104062743A (en) * 2014-07-07 2014-09-24 大连宏海新能源发展有限公司 Automatic focusing system used for regulating solar condensing lens and focusing method thereof
TWI454689B (en) * 2011-12-29 2014-10-01 Chroma Ate Inc Optical inspecting system

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