CN101914796B - Method for controlling semiconducting speed and degree of metal oxide material surface - Google Patents
Method for controlling semiconducting speed and degree of metal oxide material surface Download PDFInfo
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- CN101914796B CN101914796B CN2010102528926A CN201010252892A CN101914796B CN 101914796 B CN101914796 B CN 101914796B CN 2010102528926 A CN2010102528926 A CN 2010102528926A CN 201010252892 A CN201010252892 A CN 201010252892A CN 101914796 B CN101914796 B CN 101914796B
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Abstract
The invention belongs to the technical field of metal oxide material surface treatment, and in particular relates to a method for controlling the semiconducting speed and the semiconducting degree of a high-resistivity metal oxide material surface. The method is characterized by controlling the semiconducting speed and the semiconducting degree by adding an additive in an atomic hydrogen-induced semiconducting process, namely adding the additive of Na2EDTA into electrolyte solution in the process of performing atomic hydrogen treatment on the metal oxide material surface, and controlling the metalizing speed and the metalizing degree of the metal oxide material surface by changing the amount of the additive. The method has the advantages of obvious effect and convenient operation by controlling the semiconducting speed and the semiconducting degree of the metal oxide material surface are controlled by controlling the amount of the additive.
Description
Technical field
The invention belongs to the metal oxide materials technical field of surface, particularly a kind of control high resistivity metal oxide materials surface semiconductor speed and degree methods.
Background technology
The surface metalation of high resistivity metal oxide materials has become the Technology of hi-tech industry particularly important, like high-frequency electronic components and parts, multilayer chiop encapsulation, microelectronics and precision optical machinery manufacturing etc.A kind of new high resistivity metal oxide materials method for surface metallation is suggested [a kind of method for surface electroplating of high-resistivity metallic oxide material (ZL200710118076.4)]; In the method; Need earlier with oxide material surface semiconductor; But semiconductor speed and degree also are not easy control, are unfavorable for the product that obtains expecting.
Summary of the invention
The purpose of this invention is to provide a kind of method of controlling metal oxide materials surface semiconductor.This method can be controlled the speed and the degree of metal oxide materials surface semiconductor effectively.
A kind of control metal oxide materials surface semiconductor speed and degree methods are added a kind of additive semiconductor speed and degree are controlled through causing at atomic hydrogen in the semiconductor process.Promptly in the process of the metal oxide materials surface being carried out the atomic hydrogen processing, in electrolyte solution, add additive Na
2EDTA controls metal oxide materials surface metalation speed and degree through the amount that changes additive.
It is following that the present invention controls the concrete grammar of metal oxide materials surface semiconductor:
At first, the preparation electrolyte solution like (concentration 5 grams per liters～500 grams per liters) such as aqueous sodium persulfate solutions, adds additive Na in the aqueous solution
2EDTA (concentration 1 grams per liter～15 grams per liters) mixes.Then metal oxide materials and dispersed conducting medium such as steel ball are mixed, together place aqueous electrolyte liquid; With the conducting medium is negative electrode, through electrolytic aqueous solution metal oxide materials is carried out atomic hydrogen and handles.In the electrolytic aqueous solution process, conducting medium and metal oxide materials vibrated or stir and have better electricity and lead the increase effect, 0.1～5 ampere/square decimeter of cathode current density, 0～60 ℃ of aqueous electrolyte liquid temperature.In the electrolytic aqueous solution process; Atomic hydrogen produces on conducting medium, and hydrogen migration also is adsorbed on the metal oxide materials surface, leads modifying function through the electricity of atomic hydrogen; Make metal oxide materials surface electronic electricity lead and increase considerably, semiconductor even metallization occur.Additive Na
2The effect of EDTA mainly is the adsorption process that has influenced hydrogen, Na
2EDTA is good complexing agent, is adsorbed on the surface of metal oxide materials easily, has reduced the semiconductor speed and the degree on metal oxide materials surface.Through control additive Na
2The amount of EDTA is controlled the speed and the degree of metal oxide materials surface semiconductor.
Among metal oxide materials containing metal element titanium of the present invention, iron, cobalt, nickel, copper, zinc, niobium, lead, the manganese 1～9 kind; Metal oxide materials can only be the simple oxide of these metallic elements; Also can be the composite oxides of the simple oxide composition of these metallic elements, the molar content sum of these nine kinds of metallic elements be between 10%～50% in the oxide material.
The invention has the advantages that:, the speed and the degree of metal oxide materials surface semiconductor are controlled through the amount of control additive.Effect is obvious, is convenient to operation.
The present invention is applicable to the control of metal oxide materials surface semiconductor speed and degree.
Description of drawings
As shown in the figure, X-coordinate is represented the atomic hydrogen treatment time, and ordinate zou is represented the logarithmic value of metal oxide materials (nickel zinc copper ferrite material) resistivity, and curve 1,2,3,4 representes not have additive, additive Na respectively
2Resistivity was with the change curve in atomic hydrogen treatment time when EDTA concentration was 1.86 grams per liters, 3.73 grams per liters and 11.16 grams per liters.
Embodiment
Embodiment 1
Choose 10 pieces of nickel-copper-zinc ferrite ceramic disks that sinter, diameter is 1 centimetre, and thickness is 1 millimeter, and ferrite consists of Ni
0.3Zn
0.5Cu
0.2Fe
2O
4, the ferro element molar content is 28.6%.Is that 0.5 millimeter steel ball places hanging basket with the nickel-copper-zinc ferrite ceramic disks with diameter; Hanging basket is immersed in the aqueous sodium persulfate solution, is anode with the titanium basket, electrolytic aqueous solution under vibration condition; The atomic hydrogen electricity is carried out on the Ferrite Material surface lead modification and handle, make surperficial semiconductor.Processing parameter is following:
Sodium sulfate (Na
2SO
4) aqueous solution 41.7 grams per liters
Na
2The EDTA aqueous solution 1.86 grams per liters
2 amperes/square decimeter of cathode current densities
20 ℃ of temperature
After handling 5 minutes, 10 minutes, 15 minutes, 20 minutes, 30 minutes respectively, ferrite wafer is taken out, clean up, use drier, survey its resistance, calculate corresponding resistivity, make as additive Na with deionized water
2The curve that resistivity changed with the atomic hydrogen treatment time when EDTA concentration of aqueous solution was 1.86 grams per liters.
Embodiment 2
Choose 10 pieces of nickel-copper-zinc ferrite ceramic disks that sinter, diameter is 1 centimetre, and thickness is 1 millimeter, and ferrite consists of Ni
0.3Zn
0.5Cu
0.2Fe
2O
4, the ferro element molar content is 28.6%.Is that 0.5 millimeter steel ball places hanging basket with the nickel-copper-zinc ferrite ceramic disks with diameter; Hanging basket is immersed in the aqueous sodium persulfate solution, is anode with the titanium basket, electrolytic aqueous solution under vibration condition; The atomic hydrogen electricity is carried out on the Ferrite Material surface lead modification and handle, make surperficial semiconductor.Processing parameter is following:
Sodium sulfate (Na
2SO
4) aqueous solution 41.7 grams per liters
Na
2The EDTA aqueous solution 3.73 grams per liters
2 amperes/square decimeter of cathode current densities
20 ℃ of temperature
Handled respectively 5 minutes, 10 minutes, 15 minutes, 20 minutes, 30 minutes, after 40 minutes, ferrite wafer is taken out, clean up with deionized water, use drier, survey its resistance, calculate corresponding resistivity, make as additive Na
2The curve that resistivity changed with the atomic hydrogen treatment time when EDTA concentration of aqueous solution was 3.73 grams per liters.
Embodiment 3
As stated, choose 10 pieces of nickel-copper-zinc ferrite ceramic disks that sinter, diameter is 1 centimetre, and thickness is 1 millimeter, and ferrite consists of Ni
0.3Zn
0.5Cu
0.2Fe
2O
4, the ferro element molar content is 28.6%.Is that 0.5 millimeter steel ball places hanging basket with the nickel-copper-zinc ferrite ceramic disks with diameter; Hanging basket is immersed in the aqueous sodium persulfate solution, is anode with the titanium basket, electrolytic aqueous solution under vibration condition; The atomic hydrogen electricity is carried out on the Ferrite Material surface lead modification and handle, make surperficial semiconductor.Processing parameter is following:
Sodium sulfate (Na
2SO
4) aqueous solution 41.7 grams per liters
Na
2The EDTA aqueous solution 11.16 grams per liters
2 amperes/square decimeter of cathode current densities
20 ℃ of temperature
Handled respectively 5 minutes, 10 minutes, 15 minutes, 20 minutes, 30 minutes, after 40 minutes, ferrite wafer is taken out, clean up with deionized water, use drier, survey its resistance, calculate corresponding resistivity, make as additive Na
2The curve that resistivity changed with the atomic hydrogen treatment time when EDTA concentration of aqueous solution was 11.16 grams per liters.
Shown in accompanying drawing, along with additive Na
2The increase of EDTA concentration of aqueous solution, the ferrite wafer resistivity decreased slows down.Thereby amount control metal oxide materials surface semiconductor speed and degree through the control additive.
Claims (1)
1. control metal oxide materials surface semiconductor speed and degree methods for one kind; It is characterized in that adding a kind of additive semiconductor speed and degree being controlled through causing at atomic hydrogen in the semiconductor process; Promptly in the process of the metal oxide materials surface being carried out the atomic hydrogen processing, in electrolyte solution, add additive Na
2EDTA controls metal oxide materials surface metalation speed and degree through the amount that changes additive; Concrete grammar is following:
At first, the preparation electrolyte solution, concentration 5 grams per liters～500 grams per liters add additive Na in the aqueous solution
2EDTA concentration 1 grams per liter～15 grams per liters mixes; Then metal oxide materials and dispersed conducting medium are mixed, together place aqueous electrolyte liquid; With the conducting medium is negative electrode, through electrolytic aqueous solution metal oxide materials is carried out atomic hydrogen and handles; In the electrolytic aqueous solution process, conducting medium and metal oxide materials vibrated or stir and have better electricity and lead the increase effect, 0.1～5 ampere/square decimeter of cathode current density, 0～60 ℃ of aqueous electrolyte liquid temperature; In the electrolytic aqueous solution process; Atomic hydrogen produces on conducting medium, and hydrogen migration also is adsorbed on the metal oxide materials surface, leads modifying function through the electricity of atomic hydrogen; Make metal oxide materials surface electronic electricity lead and increase considerably, semiconductor even metallization occur; Na
2EDTA is good complexing agent, is adsorbed on the surface of metal oxide materials easily, has reduced the semiconductor speed and the degree on metal oxide materials surface; Through control additive Na
2The amount of EDTA is controlled the speed and the degree of metal oxide materials surface semiconductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102528926A CN101914796B (en) | 2010-08-13 | 2010-08-13 | Method for controlling semiconducting speed and degree of metal oxide material surface |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102528926A CN101914796B (en) | 2010-08-13 | 2010-08-13 | Method for controlling semiconducting speed and degree of metal oxide material surface |
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| Publication Number | Publication Date |
|---|---|
| CN101914796A CN101914796A (en) | 2010-12-15 |
| CN101914796B true CN101914796B (en) | 2012-05-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010102528926A Expired - Fee Related CN101914796B (en) | 2010-08-13 | 2010-08-13 | Method for controlling semiconducting speed and degree of metal oxide material surface |
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Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100575562C (en) * | 2007-06-28 | 2009-12-30 | 北京科技大学 | A kind of method for surface electroplating of high-resistivity metallic oxide material |
| CN100576377C (en) * | 2007-08-03 | 2009-12-30 | 北京科技大学 | Termination electrode of a kind of sheet type ferrite inductor and preparation method thereof |
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2010
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