CN101907719B - Method for annealing dual-probe PMOS radiation dosimeter - Google Patents
Method for annealing dual-probe PMOS radiation dosimeter Download PDFInfo
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Abstract
The invention relates to the field of ionizing radiation dose measurement, and discloses a method for annealing a double-probe PMOS radiation dose meter based on silicon on an insulator, wherein a positive gate electrode, a back gate electrode, a source electrode and a drain electrode of the double-probe PMOS radiation dose meter based on silicon on an insulator, which is failed after irradiation, are connected to a ground wire, and the double-probe PMOS radiation dose meter is annealed for 230 to 310 hours at the ambient temperature range of 95 to 105 ℃; then raising the ambient temperature to 145-155 ℃ and continuing annealing for 80-120 hours; and then taking out the double-probe PMOS radiation dosimeter based on the silicon-on-insulator, testing at the ambient temperature of 20-25 ℃, and comparing and calibrating with data before the PMOS radiation dosimeter is not irradiated.
Description
The application divides an application, the application number of female case: 200710179354.7, and the applying date: on Dec 12nd, 2007, title: based on the double-probe PMOS radiation estimator of silicon-on-insulator.
Technical field
The present invention relates to the ionizing radiation dose field of measuring technique, relate in particular to a kind of method annealing based on the double-probe PMOS radiation estimator of silicon-on-insulator.
Background technology
Research to space radiation environment starts from the forties in last century.Along with the discovery of the severe radiation belt (Van-Allen band) that charged particle forms and the radiation-induced satellite transit fault of generation are in succession captured in the magnetic field of the earth; The research of space radiation environment more and more comes into one's own; Various space radiation Detection Techniques and equipment have obtained application in succession; Comprise also that wherein some are used for the technology of total radiation dose monitoring, like thermoluminescence (TLD) quantimeter, nylon film quantimeter, G-M counter tube, PIN diode, semiconductor detector etc.Though these technology have obtained certain success, also there is defective separately.As be difficult to be implemented in the rail dynamic monitoring, existing of having measure or sensing circuit complicated, problem such as system bulk or weight are huge, and the dosage recorded information is difficult with the electronic system interface, and data processing is loaded down with trivial details.
Nineteen seventies, the Holmes-Siedle of Britain has proposed the notion of space charge quantimeter.After the P channel metal-oxide-semiconductor transistor (PMOSFET) of special process receives ionising radiation; What in its oxide layer, produce captures the drift that positive charge and interface state can cause threshold voltage, and the amplitude and the radiation dose of giving birth to threshold voltage shift present the dull corresponding relation near linearity.On this basis, can utilize variation that ionising radiation causes the PMOSFET starting voltage, carry out total radiation dose and measure as radiosensitive parameter.Because the PMOS radiation estimator has that volume is little, in light weight, low in energy consumption, measurement and sensing circuit is simple, reliability is high, be convenient to characteristics such as remote-control romote-sensing; Be highly suitable for monitoring of the inside and outside total radiation dose environment of satellite, and in nuclear industry, medical science, radiation protection and Portable, personal Radiation monitoring field, also be widely used at rail.
But because the semiconductor devices character of PMOS radiation estimator self, it very easily receives the influence of external environment factor.Aspect index such as the reliability of long-term work and accuracy and monitoring life-span all is a gordian technique anxious to be solved at present under the radiant sensitivity of PMOS radiation estimator, the varying environment; And for the PMOS radiation estimator; For certain specific process conditions its measure tolerance limit only can be confined to one more among a small circle in; And trapped charge arrival is saturated in its oxide layer, and quantimeter is with cisco unity malfunction.Therefore be necessary existing PMOS radiation estimator structure is improved, and the PMOS radiation estimator manufacturing technology of seeking high sensitivity, high stability, wide dynamic range, can reuse.
Summary of the invention
The technical matters that (one) will solve
Deficiency to the prior art existence; The object of the present invention is to provide and a kind ofly wipe the defective technology to annealing based on the double-probe PMOS radiation estimator of silicon-on-insulator; It is a kind of method to annealing based on the double-probe PMOS radiation estimator of silicon-on-insulator; Comprise annealing process control and bias condition, annealing temperature and time adjusting, to guarantee the regeneration of quantimeter.
(2) technical scheme
For achieving the above object; The invention provides a kind of method to annealing based on the double-probe PMOS radiation estimator of silicon-on-insulator; Positive gate electrode, back-gate electrode, source electrode and the drain electrode of this method will lose efficacy behind irradiation said double-probe PMOS radiation estimator based on silicon-on-insulator are connected to ground wire, place under 95 to 105 ℃ of ambient temperature ranges annealing 230 to 310 hours; Afterwards environment temperature is warming up to 145 to 155 ℃ of scopes and continues annealing 80～120 hours; To pile up metering circuit then and take out test, with the not predose data comparison calibration of this circuit.
(3) beneficial effect
Can find out that from technique scheme the present invention has following beneficial effect:
1, utilize the present invention, can obtain having the double-probe PMOS radiation estimator of different measuring scope, manufacture process and SOI CMOS process compatible can effectively improve integrated level, reduce production costs and technology difficulty;
2, utilize the present invention, can obtain the double-probe PMOS radiation estimator based on the SOI technology, have higher stability and resistance to elevated temperatures, the scope of application is wider;
3, utilize the present invention, what can obtain a kind of range adjusted based on this kind PMOS radiation estimator piles up the metering circuit structure, and the susceptibility of radiation environment is significantly improved, and the measurable process broad also is easy to control;
4, utilize the present invention, can realize the recycling of PMOS radiation estimator probe, effectively reduce use cost.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the present invention is further specified:
Fig. 1 is the structural representation of the double-probe PMOS radiation estimator based on silicon-on-insulator provided by the invention;
Fig. 2 is the domain synoptic diagram of the double-probe PMOS radiation estimator based on silicon-on-insulator provided by the invention;
Fig. 3 is a positive gate electrode stack structural circuit synoptic diagram provided by the invention;
Fig. 4 is a back-gate electrode stacked structure circuit diagram provided by the invention.
Embodiment
For making the object of the invention, technical scheme and advantage clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, to further explain of the present invention.
As shown in Figure 1, Fig. 1 is the structural representation of the double-probe PMOS radiation estimator based on SOI provided by the invention, and as basic framework, this radiation estimator comprises this radiation estimator with the SOI that is followed successively by top layer silicon 16, oxygen buried layer 4 and bottom silicon 3 from top to bottom:
Be arranged at the positive gate oxide 9 of top layer silicon 16 upper surfaces; Be arranged at the positive gate polysilicon layer 10 of positive gate oxide 9 upper surfaces; Be arranged at the positive gate polysilicon thing layer 11 of positive gate polysilicon layer 10 upper surface, and the positive gate electrode 12 that is arranged at positive gate polysilicon thing layer 11 upper surface;
Be arranged at the drain region 15 of positive gate oxide 9 one sides, be arranged at the drain region multi-crystal silicification thing layer 14 of drain region 15 upper surfaces, be arranged at the drain electrode 13 of drain region multi-crystal silicification thing layer 14 upper surface;
Be arranged at the source region 5 of positive gate oxide 9 opposite sides; Side in next-door neighbour source region 5 that be provided with heavy doping body contact regions 6 top layer silicon 16 homotypes; 6 tagma and the source region multi-crystal silicification thing layers 7 that are provided with source region 5 upper surfaces in the body contact region are arranged at the source electrode 8 of tagma and source region multi-crystal silicification thing layer 7 upper surface;
Be arranged at the back of the body gate polysilicon thing layer 2 of bottom silicon 3 lower surfaces, be arranged at the back-gate electrode 1 of back of the body gate polysilicon thing layer 2 lower surface.
Said positive gate oxide 9 has covered the zone that top layer silicon 16 upper surfaces equal channel dimensions in the design rule.Said bottom silicon 3 constitutes back of the body grid with oxygen buried layer 4.
Respectively in the source region 5, the central authorities of body contact region 6, drain region 15, positive gate polysilicon layer 10 upper surface further are provided with contact hole, said source electrode 8, drain electrode 13 and positive gate electrode 12 are arranged on this contact hole; Central authorities at bottom silicon 3 lower surfaces further are provided with contact hole, and said back-gate electrode 1 is arranged on this contact hole.
Said positive gate electrode 12 adopts the many interdigital form parallel connections of grizzly bar, passes through contact hole and metal interconnected, the shared drain electrode of adjacent grill between the many folding shape grizzly bars.
Said positive gate electrode 12 is the electrode probe of two kinds of different ranges with back-gate electrode 1.
This quantimeter in different ways just, back of the body grid tuned grid injects; Align gate oxide 9 zones and align the grid injection, the implantation dosage scope is 1e10 to 1e12/cm
2, energy range is 95 to 105keV BF
2Transfer back of the body grid to inject to top layer silicon 16 zones, the implantation dosage scope is 1.2e11 to 1e13/cm
2, energy range is 155 to 165keV phosphorus (P).
Specifically can refer again to Fig. 1 and Fig. 2, the PMOS radiation estimator based on silicon-on-insulator provided by the present invention comprises semiconductor chip, and oxygen buried layer 4 is divided into two parts up and down with semiconductor chip, and the bottom is divided into bottom silicon 3, and top is divided into top layer silicon 16.Back of the body gate polysilicon thing layer 2 is set below bottom silicon 3, utilizes bottom silicon 3 and oxygen buried layer 4 to form back of the body grid, on back of the body gate polysilicon thing layer 2, metal level is set as back-gate electrode 1.
Positive gate oxide 9 is set and covers the zone that equals channel dimensions in the design rule at top layer silicon 16 upper surfaces, and on positive gate oxide, positive gate polysilicon layer 10 is set.Align gate oxide 9 zones and align the grid injection, the implantation dosage scope is 1e10 to 1e12/cm
2, energy range is 95 to 105keV BF
2Side at positive gate oxide 9 forms drain region 15, and covers drain region multi-crystal silicification thing layer 14 at an upper portion thereof.Opposite side at positive gate oxide 9 forms source region 5.In the side setting in next-door neighbour source region 5 and the heavy doping body contact region 6 of substrate homotype.6 form tagma and source region multi-crystal silicification thing layer 7 with 5 tops, source region in the body contact region.Transfer back of the body grid to inject to top layer silicon 16 zones, the implantation dosage scope is 1.2e11 to 1e13/cm
2, energy range is 155 to 165keV P (phosphorus).5 contact hole 17 is set in the source region respectively with body contact region 6 central authorities, drain region 14, positive gate polysilicon grid layer 10 and back of the body grid bottom silicon 3 upper surfaces, and on contact hole 17, source electrode 8 is set respectively, drain electrode 13, positive gate electrode 12 and back-gate electrode 1.
Among Fig. 2 between many foldings of the positive grid shape grizzly bar 12 through contact hole 17 with metal interconnected, wherein adjacent grill 12 shared one leak 13.
The metering circuit structure of piling up of adjusting range provided by the present invention comprises: one or many said double-probe PMOS radiation estimators based on silicon-on-insulator, mode of operation SS SW and constant current source Isd; When said double-probe PMOS radiation dose based on silicon-on-insulator was counted one, said mode of operation SS SW was connected in said constant current source Isd with the source electrode of this radiation estimator, with lead this PMOS radiation estimator drain electrode was connected to ground wire; When said double-probe PMOS radiation dose based on silicon-on-insulator is counted many; The cascade system that these many PMOS radiation estimators leakage/source of adopting joins connects; And inciting somebody to action positive separately gate electrode or back-gate electrode and drain electrode short circuit, said mode of operation SS SW is connected in said constant current source Isd with the source electrode of first order radiation estimator.
With one that chooses or many as close as possible being placed in side by side on the pcb board of identical PMOS radiation estimator; This circuit can adopt dual mode to realize: the cascade system that each PMOS radiation estimator leakages/source of adopting joins and will be separately just gate electrode and drain electrode short circuit; As shown in Figure 3; Afterbody PMOS radiation estimator drain electrode is connected to ground wire, and first order PMOS radiation estimator source electrode is connected to mode of operation SS SW; Another kind of circuit implementation is: the cascade system that each PMOS radiation estimator leakage/source of adopting joins is also incited somebody to action back-gate electrode and drain electrode short circuit separately; As shown in Figure 4; Afterbody PMOS radiation estimator drain electrode is connected to ground wire; First order PMOS radiation estimator source electrode is connected to mode of operation SS SW, and it is available to have the two kind mode of operations identical with first kind of circuit implementation.
This mode of operation SS SW has two kinds of mode of operations available: measurement pattern, and promptly open SW and be connected to zero potential, accept irradiation simultaneously; Or readout mode; Be that switch SW is connected to constant current source; Guarantee that for PMOS radiation estimator source electrode injects the PMOS radiation estimator works in the steady current of saturation region, SW was connected to constant current source after 20 seconds, and first order PMOS radiation estimator source electrode node voltage is led to Acquisition Circuit as the quantimeter output voltage; Utilize the differential voltage of demarcation in advance and the corresponding relation curve of radiation dose, obtain corresponding radiation dose numerical value with it.
When this piles up metering circuit measurement LDR; Available many PMOS radiation estimator back-gate electrodes pile up, thus reach to radiation environment than high sensitive, when radiation dose surpasses the metering range; Can reduce stacked PMOS radiation estimator number, until last; When piling up the measurement high dose rate, can the circuit implementation be changed into many positive gate electrode stack of PMOS radiation estimator, when radiation dose surpasses the metering range, can reduce stacked PMOS radiation estimator number, until last.
Provided by the present invention to the annealing process control of double-probe PMOS radiation estimator and bias condition, annealing temperature and time adjusting enforcement as follows based on silicon-on-insulator: the positive gate electrode of PMOS radiation estimator, back-gate electrode, source electrode and the drain electrode that will behind irradiation, lose efficacy are connected to ground wire, place under 95～105 ℃ of ambient temperature ranges to anneal 230～310 hours; Afterwards environment temperature is warming up to 145～155 ℃ of scopes and continues annealing 80～120 hours; To pile up metering circuit then and take out test, with the not predose data comparison calibration of this circuit.Simultaneously, we also simulate and test to utilize this method, and the result shows that this annealing control method is correct, and global error is in 20%.
Above-described specific embodiment; The object of the invention, technical scheme and beneficial effect have been carried out further explain, and institute it should be understood that the above is merely specific embodiment of the present invention; Be not limited to the present invention; All within spirit of the present invention and principle, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (1)
1. method to annealing based on the double-probe PMOS radiation estimator of silicon-on-insulator; It is characterized in that; Positive gate electrode, back-gate electrode, source electrode and the drain electrode of this method will lose efficacy behind irradiation said double-probe PMOS radiation estimator based on silicon-on-insulator are connected to ground wire, place under 95 to 105 ℃ of ambient temperature ranges annealing 230 to 310 hours; Afterwards environment temperature is warming up to 145 to 155 ℃ of scopes and continues annealing 80～120 hours; To pile up metering circuit then and take out test, with the not predose data comparison calibration of this circuit.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5508523A (en) * | 1994-05-17 | 1996-04-16 | Saint Gobain/Norton Industrial Ceramics Corp. | Trained dosimeters, method and apparatus |
| CN1354498A (en) * | 2001-12-21 | 2002-06-19 | 清华大学 | Gamma-ray radiation method for improving imaging quality of CMOS digital image sensor |
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| US6028002A (en) * | 1996-05-15 | 2000-02-22 | Micron Technology, Inc. | Refractory metal roughness reduction using high temperature anneal in hydrides or organo-silane ambients |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5508523A (en) * | 1994-05-17 | 1996-04-16 | Saint Gobain/Norton Industrial Ceramics Corp. | Trained dosimeters, method and apparatus |
| CN1354498A (en) * | 2001-12-21 | 2002-06-19 | 清华大学 | Gamma-ray radiation method for improving imaging quality of CMOS digital image sensor |
Non-Patent Citations (2)
| Title |
|---|
| PMOS剂量计的退火特性;范隆等;《半导体学报》;20000430;第21卷(第4期);383-387 * |
| 范隆等.PMOS剂量计的退火特性.《半导体学报》.2000,第21卷(第4期),383-387. |
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