CN101903976A - Method and system for fabricating three-dimensional structures with sub-micron and micron features - Google Patents
Method and system for fabricating three-dimensional structures with sub-micron and micron features Download PDFInfo
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- CN101903976A CN101903976A CN2008801220406A CN200880122040A CN101903976A CN 101903976 A CN101903976 A CN 101903976A CN 2008801220406 A CN2008801220406 A CN 2008801220406A CN 200880122040 A CN200880122040 A CN 200880122040A CN 101903976 A CN101903976 A CN 101903976A
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B27/00—Photographic printing apparatus
- G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
- G03B27/52—Details
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2035—Exposure; Apparatus therefor simultaneous coating and exposure; using a belt mask, e.g. endless
Abstract
A method and system are provided for fabricating three-dimensional (3D) structures having micron or submicron features. The method includes providing a continuously-formed relief structured material, the relief structured material having a first layer comprising a material having a pattern of relief structures formed on a first surface thereof. The structured material includes second layer comprising a photosensitive material that is disposed on the first layer. The relief structured material is exposed to radiation through the first layer, where the pattern of relief structures formed on the first surface of the first layer generates a 3-dimensional light intensity pattern of the radiation that is incident on the second layer. The exposed material is developed, where the developed material comprises a plurality of 3D structures having micron or submicron features.
Description
Background technology
The present invention relates generally to manufacturing system and method.More particularly, the present invention relates to be used for making in a continuous manner the method and system of three-dimensional (3D) structure of micron order and submicron order.
Demand for the new product that has more features in than small size has caused for making the more also raising day by day of demand of the less feature of high yield.Some routine techniques that is used to make three-dimensional periodic structure (be also referred to as " 3D periodic structure ", or more specifically be called " 3D periodic nano-structure ", wherein such structure has length, width and the altitude feature under the nanometer system) is known." 3D structure " means the structure that can be quasi periodicity on all three dimensions (length, width and height).These conventional methods comprise the technology of repeatedly shining based on colloidal precipitation, polymer phase separation, templating growth, fluid self assembly, the printing of multi beam interference lithography, two kinds of light beams and based on printing, die casting and the method that writes.Using single diffraction element mask to make the 3D periodic structure also is confirmed.
For example, people's such as I.Divliansky " Fabrication of three-dimensional polymerphotonic crystal structures using single diffraction element interferencelithography ", Appl.Phys.Letters, Vol.82, (March 17 for No.11,2003) (" using single diffraction element interference lithography printing to make the three-dimensional polymer photon crystal structure ", " Applied Physics journal ", the 82nd volume, o. 11th (on March 17th, 2003)) four beam interferometer patterns has been described, write down four beam interferometer patterns by single diffraction element in photosensitive polymer, single diffraction element has by the central opening that relative to each other centers on three diffraction grating of 120 ° of settings and centers on.
In another conventional method, people's such as S.Jeon " Fabricating complexthree-dimensional nanostructures with high-resolution conformable phasemasks ", PNAS, Vol.101, No.34, (August 24 for pp.12428-12433,2004) (" using the suitable shape phase mask of high-resolution to make complicated 3-D nano, structure ", " institute of NAS periodical ", the 101st volume, the 34th phase, 12428-12433 page or leaf (on August 24th, 2004)) described use elastomer (PDMS) mask and made the exposure of photopolymer film.In the method, the light that passes phase mask (having the comparable relief features of size and wavelength of light) has produced the 3D that makes photopolymer film exposure intensity on its whole thickness and has distributed.The phase mask that uses comprise suitable shape, the elastomer phase mask, this phase mask has size and the comparable relief features of wavelength of light.Make embossment structure carry out conformal the contact, thereby allow high machinery and manufacturing tolerance with the photoresist surface.The geometry of this intensity pattern depends on design (being the degree of depth and the layout and the refractive index of embossment structure) and irradiation light wavelength, polarization and the coherence of mask.
Yet conventional manufacture method is not suitable for manufacturing and has micron or periodic large volume of sub-micron and large tracts of land structure.In addition, the conventional manufacture method of these of reference also is not provided at the ability that the situation that is easy to make and has manufacturing defect control gets off to make up dissimilar grid.
Summary of the invention
In one aspect of the invention, the method that is used to make three-dimensional (3D) structure with micron or sub-micron features comprises provides the embossment structure formed material that forms continuously, the embossment structure formed material has ground floor, and ground floor comprises the material with the embossment structure pattern that forms on its first surface.Structured material comprises the second layer that contains light-sensitive material that is arranged on the ground floor.Make the embossment structure formed material be exposed to the radiation of passing ground floor, wherein be formed at the three-dimensional light intensity pattern of the radiation of the embossment structure pattern generating incident on the second layer on the first surface of ground floor.Form exposing material, wherein the material of Xing Chenging comprises a plurality of 3D structures with micron or sub-micron features.
On the other hand, be used for making continuously system and comprise the master mold cylinder that is formed with structuring, embossing pattern on it with micron or three-dimensional (3D) structure of sub-micron features.This system comprises multilayer material, and multilayer material comprises optional transparent ground floor, and ground floor has the embossing pattern that forms by the master mold cylinder on its first surface, and multilayer material also comprises the second layer that contains light-sensitive material, and the second layer is arranged on the ground floor.This system also comprises exposure source, and exposure source makes ground floor be exposed to radiation, with the three-dimensional light intensity pattern of the radiation that is created in incident on the second layer.This system comprises that also development station is to provide post-exposure processes to the continuous relief structure formed material.
The content of the invention described above is not that intention is described each illustrated embodiment of the present invention or every kind of execution mode.Accompanying drawing and subsequent embodiment are more specifically for example understood these embodiment.
Description of drawings
Fig. 1 is the schematic diagram of the system that is used for making continuously three-dimensional (3D) structure with micron or sub-micron features according to aspects of the present invention.
Fig. 2 A be according to aspects of the present invention in exposure and the exemplary continuous embossment structure formed material before developing etc. axonometric drawing.
Fig. 2 B be according to aspects of the present invention in exposure and another exemplary continuous embossment structure formed material after developing etc. axonometric drawing.
Fig. 3 is AFM (atomic force microscope) image of the exemplary experiment embossment structure pattern that forms on the phase mask rete according to aspects of the present invention.
Fig. 4 be according to aspects of the present invention exposure continuous relief structure formed material and the schematic diagram of three-dimensional light intensity pattern.
Fig. 5 A and Fig. 5 B are exemplary first laboratory sample of the 3D structure of formation and ESEM (SEM) image of second laboratory sample.
Fig. 6 A and Fig. 6 B are exemplary the 3rd laboratory sample of the 3D structure of formation and ESEM (SEM) image of the 4th laboratory sample.
Although above-mentioned accompanying drawing illustrates some embodiment of the present invention, as described in discussing, it will also be appreciated that other embodiment.In all cases, the disclosure is only exemplary and introduce the present invention without limitation.Should be appreciated that those skilled in the art can design many other and belong to the modification and the embodiment of principle of the invention scope.Accompanying drawing may not drawn on scale.In institute's drawings attached, identical Ref. No. is represented identical parts.
Embodiment
The present invention relates to be used to make the method and system of the 3D structure of micron order and submicron order.Aspect preferred, in substrate, form stacking of polymeric layer or organic/inorganic composite material or inorganic layer, wherein at least one in this layer is photosensitive by at least one other layer in continuous embossed and this layer.When this stacks when moving through light source, embossed layer can provide the phase mask characteristic.Thereby produce the distribution of the radiation intensity that makes the photosensitive layer exposure.This stacks and can be developed subsequently, thereby produces the 3D structure, and embossed layer is dissolved or layering.
The 3D structure of utilizing method and system as herein described to produce can comprise the symmetry or the asymmetric pattern of micron or sub-micron (comprising nanoscale) feature.These patterns of feature can have the controlled density with change in depth.In addition, the 3D structure also can comprise a plurality of defect sites.As described herein, this dynamic approach and system provide the continuous manufacturing of the 3D structured material with micron and sub-micron periodicity or quasi periodicity, and wherein micron and submicrometer structure can be prepared into more much bigger than the size of initial embossment structure and exposure source.These structures can be generated as has high manufacturing tolerance.
Fig. 1 illustrates the continuous exemplary manufacturing system of making 100 of 3D structure that is used to carry out micron and sub-micron features.Manufacturing system 100 comprises the master mold cylinder 110 that is formed with embossing pattern on it, and embossing pattern is imparted on the phase mask film 120.Can use one group of roller 115 or similar equipment to introduce extra layer (for example photoresist layer 132 and substrate 136) to form continuous embossment structure formed material 140.System 100 also comprises the irradiation source 150 with uviol lamp or laser 152, and this irradiation source combines with the phase mask film and produces multi beam interference figure 155, and this multi beam interference figure is used in and forms micron and submicrometer structure on the photoresist layer.Provide in addition and developed or exposure rear platform 160, to provide post-exposure processes to continuous embossment structure formed material 140.In operation, system 100 uses mobile platform (for example mobile platform that uses in a usual manner in based on the manufacturing of width of cloth material) that the continuous manufacturing of 3D structure is provided.
Provide continuous embossment structure formed material 140 as base material, final 3D structured material is formed by this base material." continuous material " means the material of its length (L) than the big several times of its width (w).For example, the length of continuous embossment structure formed material 140 can be several meters (length that promptly comprise hundreds of rice or thousands of meters), and width can be about 1 meter to about 2 meters (is 100: 1 as length-width ratio).
Aspect preferred, shown in Fig. 2 A, embossment structure formed material 140 comprises phase mask rete 120, photoresist layer 132 and back sheet or substrate 136.Can randomly be also to comprise space anti-reflecting layer, wavelength filtering layer, separator, binder course or supporting course.Aspect example, embossment structure formed material 140 is for being provided with the material that stacks of photoresist layer 132 between phase mask film 120 and backing or basalis 136.
Aspect alternative, embossment structure formed material 140 can comprise phase mask rete 120 and photoresist layer 132, and has saved independent basalis 136.In this embodiment, the phase mask rete 3D structured material that can be embossment structure formed material 140 and gained provides enough structural support.
This material can be water-soluble or pure soluble material, for example polyvinyl alcohol (PVA).In addition, phase mask rete 120 also can finally comprise and have a plurality of embossment structures 122 upper surface of (utilizing the method that hereinafter describes in further detail to form).Embossment structure 122 can be crossed over most of in the phase mask rete 120 or all, and can have the height (h1, h2) of variation thus when being exposed to irradiation source, obtain suitable phase mask characteristic.For example, feature can have about 10nm periodicity and similar other characteristic size of level to approximate number micron (for example being less than or equal to 10 microns).At operating purpose, can on carrier film (preferably belonging to same material) or removable liner, provide phase mask rete 120.
Aspect alternative, layer 122 can be constructed to amplitude mask, and wherein relief features can comprise periodic metal wire or grid, and this metal wire or grid can form diffraction pattern when being exposed to light or other radiation sources.Thus, layer 122 can be to the small part transmission or fully transmission.
Aspect example, the part that the phase mask rete 120 of embossment structureization can be used as manufacturing system 100 produces.As shown in Figure 1, can use master mold cylinder 110 so that embossment structure 122 is formed on the phase mask rete 120.Embossment structure forms on cylinder surface, and this cylinder surface can comprise metal (as Ni, Cu, Al), polymer, oxide, diamond and diamond-film-like.In one aspect, can handle the cylinder surface material.
Maybe advantageously, before adding duplicating material, release coating is applied on the surface of master mold cylinder.If cylinder is by SiO
2, the inorganic or polymeric material of SiN or other makes, then mould can adopt the silicon fluoride release agent to apply, this silicon fluoride release agent (for example) is trim,ethylchlorosilane or fluorinated siloxane (for example in U.S. Patent No. 5,851, those disclosed among 674 people such as () Pellerite).The derivative that to can be used for this purpose material in addition be the hexafluoro PPOX, for example U.S. Patent No. 7,173, those disclosed among 778 people such as () Jing.These full patent texts are incorporated into way of reference.
If cylinder surface is metallized, then also maybe advantageously, on metalized article, apply release agent to improve the release property of the polymer that forms embossment structure.For example, the structuring cylinder surface can utilize such as in U.S. Patent No. 6, disclosed fluorinated phosphate or the separator such as the phosphate that disclosed Perfluoropolyether amide base in U.S. Patent Publication No.2005/0048288 people such as () Flynn connects apply among 824,882 people such as () Boardman.Being contemplated that in addition can be by utilizing (for example) in U.S. Patent No. 6,696, and disclosed diamond like carbon glass applies and protects the structuring cylinder surface among 157 people such as () David.At the application U.S.S.N.11/766 of common pending trial, among 477 people such as () Zhang other suitable material that can be used as separator has been discussed.In the above-mentioned patent each is incorporated this paper into way of reference in full.
In order to form structure, can use in the following technology one or more: diamond turning, laser ablation, optical lithography, focused ion beam and electron beam lithography.Aspect preferred, master mold cylinder 110 comprises the pattern of the embossment structure 111 that can utilize conventional diamond turning or the formation of laser ablation technology.During operation, make master mold cylinder 110 Continuous Contact phase mask retes 120 so that embossment structure is copied on the phase mask rete 120.Aspect alternative, will be conspicuous after those skilled in the art reads the present invention, can use any in the multiple different reproduction technology, comprise that modeling and cooling (at thermoplastic), modeling and curing are (at thermosets; Comprise photocuring).Modeling can comprise any in the following technology: extrude, dip-coating, blade coating, roller coat, intaglio coating, roller coat, lithographic printing coating, printing and ink-jet application.
For example, Fig. 3 shows AFM (atomic force microscope) image of the experiment embossment structure pattern that forms on the phase mask rete, and wherein the X-Y spacing of embossment structure is that about 1.6 microns, the degree of depth (h1-h2) are about 0.5 micron.Aspect preferred, it is constant that the array of embossment structure periodically keeps.Aspect alternative, the periodicity of embossment structure can have difference according to the type of exposure that is applicable to application-specific.
As mentioned above, introduce photoresist layer 132 and substrate 136 to form continuous embossment structure formed material 140.Can introduce these extra layers by conventional coating process (as being coated with) or conventional laminating method by dying.Can use the layer thickness control technology according to the photo anti-corrosion agent material type of using and/or the geometry of desired structure.
Aspect preferred, the thickness of photoresist layer 132 is extremely about 100 microns of about 10nm.Those of skill in the art will be understood that after reading the present invention that suitable thickness can be depending on the factor such as material type, type of exposure and levels of exposure.
Aspect preferred, basalis 136 can be included in interior and can be formed by the width of cloth material type backing/supporting polymeric material (for example polyester (PET and PEN), polyimides, Merlon or polystyrene) of routine.Aspect alternative, substrate can comprise metal foil material (for example stainless steel, other steel, aluminium or copper) or paper or woven fabric or non-woven material.Whole in the above-mentioned base material, they also can comprise coated surface.
Aspect preferred, basalis 136 has enough intensity and/or pliability, and thickness can be about 10 microns to some approximately (10 or still less) millimeter.Aspect alternative, substrate 136 can comprise rigid material, for example glass.
In addition, aspect alternative, also can before or after impression phase mask structure, introduce extra layer to form continuous embossment structure formed material 140.Can randomly be that manufacturing system 100 also can comprise near the curing source 125 that is arranged on the master mold cylinder 110.Curing source 125 can be shone and solidify (according to the material compositions of layer 120, with heat transfer type or by the UV irradiation) phase mask rete 120 with final formation embossment structure 122.Multi-stackedly therein result from before the imprint process and use subsequently under the situation of UV curing, should carefully select to solidify wavelength so that its influence to the photoresist layer is minimized.
After continuous embossment structure formed material 140 forms, make structured material 140 be exposed to radiation by exposure source 150.Aspect preferred, exposure source 150 comprises radiation source, preferred partially coherent or coherent source.In one aspect, can use low-cost light source, for example the UV lamp 152, itself in addition have partial ocoherence (wherein temporal coherence length is longer than the size of the structure height of phase mask rete 120).For example, can use collimation mercury lamp with colour filter.Perhaps, can be with one or more LED, laser diode or laser as exposure source 150.Other alternative aspect, can use infrared (IR) source.In alternative example in this IR source, photoresist layer 132 can comprise alloy making things convenient for the two-photon effect in the photoresist, thereby causes light-induced reaction.In this alternative example, can increase the thickness of photoresist layer 132.
After the exposure, the structured material 140 that makes exposure is by development platform 160.Can randomly be also can before the development platform, use the heating element (not shown) to come the heating arrangement formed material, so that finish the reaction in the photoresist layer.
Aspect preferred, make the structured material 140 of exposure stand the wet development method, this wet development method solubilized phase mask rete 120 and (by remove the exposure/unexposed portion in the photoresist according to the photo anti-corrosion agent material type of using) be completed into photoresist layer 132 with micron and sub-micron features '.Can be before developing, during or from structured material, remove phase mask rete 120 afterwards.Aspect alternative, can use deposition step, rather than before developing or during remove the phase mask layer, (after exposure) layer that material is extra structurally deposits to cover the phase mask layer in this deposition step.This material preferably has identical refractive index with the phase mask layer and can keep the part of structure after developing.
In operation, the development station can comprise the solution distributing equipment, and this equipment forms above making line, thereby obtains the aerosol type development method.For example, can use the water-based developer such as tetramethyl-ammonium hydroxide, for example derive from Microposit MF-319, MF-321, MF-322 or the CD-26 of Rohm and Haas Electronic Materials.Can use other conventional developer (, can use the SU-8 developer that derives from MicroChem Corp.) as for the SU-8 material.Aspect alternative, can be before developing with phase mask layer 120 from photosensitive layer 132 ' peel off or layering, for example by using release coating.
Can develop in the following manner: farthest reduce or suppress the flexible of pattern that the light of layer 132 limits, this is flexible to be that the stress that is produced by the surface tension of solvent between dry period causes.One alternative aspect, can after developing, provide extraction station.Therefore, in order to minimize drying stress, can pass through CO
2Means of supercritical extraction (referring to " Sol-Gel Science (the collosol and gel science) " of (for example) C.J.Brinker and G.W.Scherer, Academic Press (New York), 501-505 page or leaf (nineteen ninety)) removes the solvent that is used to make the structure development.The details of this supercritical drying drying method is described in greater detail among the US 2005/0124712, and it incorporates this paper into way of reference in full.
After reaction that removes photoreactive composition or non-reacted parts, if desired, the gained clearance space of periodic structure can be utilized one or more materials partially or completely fill.Suitable material comprises (for example) semiconductor (organic or inorganic), metal (for example tungsten and the noble metal such as silver) or shows the other materials with desired properties.Preferably, this material is the high-index material (for example refractive index is greater than about 2) such as inorganic semiconductor.The example of available inorganic semiconductor comprises silicon, germanium, selenium, GaAs, indium phosphide, the ternary compound such as InGaP and Gallium indium arsenide or the like.Also can use doped semiconductor (for example can make silicon doping boron be arranged) to form the n N-type semiconductor N.
Fig. 2 B illustrates resulting structures 170, and wherein the photoresist layer 132 of Xian Yinging ' comprise has the 3D structure of micron and sub-micron features.
In alternative embodiment, can change manufacturing system, make the phase mask layer can be arranged on the bottom of structured material 140.In addition, exposure system 150 can be arranged on makes the line below, and illumination is passed substrate/backing rete 136 from the below emission.
Other alternative aspect, the phase mask layer can remain on the appropriate location after step of exposure, the phase mask layer can be used as and is used for the adjustment instrument further handled herein.For example, by with the three-dimensional periodic exposure structure in laser or electron beam irradiation, can produce defective therein.
As mentioned above, exposure source 150 produces irradiation beams, the incident and make the structured material exposure on a large portion of phase mask rete 120 of this irradiation beam.This exposure is created in the three-dimensional light intensity pattern 155 of incident on the photoresist layer 132.This multi beam interference figure is caused by the radiant exposure of embossment structure and produces intensity pattern 155.Three-dimensional light intensity pattern 155 is corresponding to the density of characteristic pattern, this characteristic pattern with by the side direction of embossment structure in the degree of depth of light source control and the phase mask film, vertically and the variation of depth direction component form.Multi beam, interference figure 155 comprise vertical (with respect to the photoresist laminar surface), zeroth order electromagnetic field component and angled higher-order field component, these two components all in the drawings the plane (as shown in the figure) and the plane from figure penetrate/pass (not shown).
In addition, in operation, exposing material moves, referring to (as) Fig. 4 (direction arrow 180).Because the finite size (width=" W ") of light source, therefore, structure 140 reduces corresponding harmful edge effect when will producing some and light equalization and contrast during by limited light beam 153.Schematically shown in Figure 4, the point of the photoresist layer of exposure is by the first edge 154a, only exist herein a beam component or only two beam components intersect.The photoresist layer of exposure is also by main 3D interference figure 156.Then, the photoresist layer of exposure is by another edge 154b.If do not control, then suchly operate exposure and can produce the flushing fully that the dose exposure contrast reduces (can cause between the pattern structure direction asymmetric) or (possibility) structure.For example, reduce by increasing the width (W) of exposing beam, make the exposure dose contribution that is derived from the border width of setting by crossing angle.In addition, the nonlinear response of photoresist can be adjusted and be used for further to reduce because the influence that the non-modulation light at edge or part are modulated photogenic exposure dose.The another kind of method that reduces the exposure of non-modulation light in the fringe region or part light modulated can be the fractional dose that photosensitive layer is positioned as close to the phase mask setting and reduces the not same order that passes through with different angles.
In general, aspect preferred, width of cloth material processing method allows to have the continuous preparation of the 3D structure of micron and sub-micron features (foozle is had high tolerance).Thus, relevant with the optical lithography method common alignment problem is simplified.An illustrative aspects, these 3D structures with micron and sub-micron features can be used in Organic Light Emitting Diode (OLED) application.Other application can comprise photonic propulsion, chemical sensing, catalyst carrier, storage, nano-fluid network and microfluidic networks and organizational project.
Experiment
In first experiment, prepared phase mask film (forming) and gone up laminated in the substrate that is coated with the photoresist layer (having used glass and PETG (PET) film) it by dimethyl silicone polymer (PDMS) material.The first photoresist layer (particularly derives from Rohm and Haas Electronic Materials (Philadelphia by the positive photoresist material, PA) MICROPOSIT S1813 photoresist) form, and carry out dip-coating to realize about 5 microns thickness.Prepare the PDMS film figure by utilizing the nickel mould to impress.Fig. 3 illustrates the afm image of the phase mask film layer structure of preparation.The phase mask rete of preparation has upright embossment member, and it is that 1.6 microns, the degree of depth are 0.5 micron, the gross thickness 2D periodicity hole for about 3mm that this embossment member has the cycle.Exposure source is the UV laser, and (it has the output wavelength of about 351nm and the power of about 1W for Santa Clara, Sabre FreD laser CA) particularly to derive from Coherent Inc..It is static that multilayer material keeps between exposure period.
First laboratory sample is shown among Fig. 5 A, and this figure provides ESEM (SEM) image of the 3D structure that forms.Take the image of this first sample structure at the coating edge place that has thicker photoresist layer.Exposure structure demonstrates the structure of some different stages, and it spreads all over the entire depth of sample.In this example, the diameter dimension of hole is about 1 micron size.
In second experiment, condition is identical with above-mentioned those, and different is that the photoresist layer (particularly derives from MicroChem (Newton, SU-8 photoresist MA)) formation by epoxy radicals negative photoresist material.Fig. 5 B shows the SEM image of second laboratory sample, and this illustrates the double-decker that embeds the gap spheroid.
In another experiment, (" ARC "-especially derives from the slide that BrewerScience Inc. (Rolla, XLT ARC MO)) applies to utilize antireflecting coating.Photoresist is arranged on the ARC.In this case, used the positive photoresist material (particularly to derive from Rohm and Haas Electronic Materials (Philadelphia, S1813 photoresist PA)), and carried out dip-coating (with the speed of about 3mm/s).ARC thickness is evaluated as and is slightly thicker than 0.5 micron, and photoresist thickness is evaluated as about 15 microns.Preparation structuring phase mask film (forming) and it is set in the photoresist/ARC/ substrate with upright embossment structure by dimethyl silicone polymer (PDMS) material.Similar with method mentioned above, prepare the PDMS film figure by utilizing the nickel mould to impress.This multilayer material is assembled on the translation dressing table.Make the gaussian shape laser beam (diameter is 3.2mm) of its 351nm that passes limited collimation with speed mechanical stage/material of about 60mm/s.Draw and have the lines of some millimeters and some cm widths.Light intensity has difference from 60mW (first attempts) to 70mW (second attempts).After exposure, (Philadelphia develops in MICROPOSIT MF-319 developer PA) deriving from Rohm and Haas Electronic Materials with sample.The developing time that uses arrives about 90 seconds (first attempts) for about 50 seconds (second attempts).
The example of the structure that obtains from these experiments is shown among Fig. 6 A (first attempts) and Fig. 6 B (second attempts).Vertically the periodicity on the dimension indicates observed 3D structure in cutting the edge.In Fig. 6 A, observed hole-rod structure has also characterized the periodicity in third dimension degree (being depth direction).Fig. 6 B also shows the variations of the initial 2D mould pattern (also indicating the 3D exposing patterns) in first plane.The possible cause of this specific character is the non-uniformity of phase mask layer.
Though the present invention is described with reference to preferred embodiment, those skilled in the art will appreciate that under the prerequisite that does not depart from the scope of the present invention, can carry out in form and the modification on the details.
Claims (15)
1. method of making three-dimensional (3D) structure, described three-dimensional (3D) structure has micron or sub-micron features, and described method comprises:
The embossment structure formed material that forms continuously is provided, and described embossment structure formed material has: ground floor comprises the material with the embossment structure pattern that forms on its first surface; The second layer comprises light-sensitive material;
Make described embossment structure formed material be exposed to the radiation of passing described ground floor, the three-dimensional light intensity pattern of the described radiation of the described embossment structure pattern generating incident on the described second layer that wherein on the described first surface of described ground floor, forms; And
The embossment structure material of exposure is developed, and wherein the second layer of Xian Yinging comprises a plurality of 3D structures, and described 3D structure has micron or sub-micron features.
2. method according to claim 1 also comprises:
On the described ground floor of described embossment structure formed material, form the embossment structure pattern continuously.
3. method according to claim 2, the rotation master mold cylinder that wherein has the embossment structure pattern contacts the unfashioned surface of described ground floor continuously, and the embossment structure of described master mold cylinder is copied on the described surface of described ground floor.
4. according to the described method of aforementioned each claim, wherein said embossment structure formed material also comprises substrate to support the described second layer, and the wherein said second layer is laminated into described ground floor, and wherein said substrate is laminated into the described second layer.
5. according to the described method of aforementioned each claim, also comprise:
Before step of exposure, solidify described ground floor.
6. according to the described method of aforementioned each claim, also be included in development step and heat described structured material before.
7. according to the described method of aforementioned each claim, comprise that also the second layer to developing carries out supercritical drying.
8. according to the described method of aforementioned each claim, also comprise:
Utilize one or more packing materials gained clearance space of fill cycle structure at least in part.
9. method according to claim 1 also comprises:
Sedimentary cover is to cover described ground floor after exposure, and wherein said tectal refractive index is identical substantially with the refractive index of described ground floor.
10. system that is used for making continuously three-dimensional (3D) structure, described three-dimensional (3D) structure have micron or sub-micron features, and described system comprises:
The master mold cylinder has structuring embossing pattern formed thereon;
Multilayer material, described multilayer material comprises ground floor, described ground floor has the embossing pattern that forms by described master mold cylinder on its first surface; Described multilayer material also comprises the second layer, and the described second layer contains light-sensitive material;
Exposure source makes described ground floor be exposed to radiation, with the three-dimensional light intensity pattern of the described radiation that is created in incident on the described second layer; With
The development platform provides post-exposure processes to continuous embossment structure formed material.
11. system according to claim 10, wherein said multilayer material comprises that also substrate is to support the described second layer.
12. according to claim 10 each described system to the claim 11, also comprise the heating element that is provided with near described exposure source, after exposure, finally to finish the photochemical reaction of the described second layer.
13. according to claim 10 each described system to the claim 12, also comprise the curing source that is provided with near described master mold cylinder, before exposure, to solidify described ground floor.
14., also comprise the extraction station that is arranged on after the described development platform, so that the second layer that develops is carried out supercritical drying according to claim 10 each described system to the claim 13.
15. according to claim 10 each described system to the claim 14, wherein said ground floor comprises one of thermoplastic and thermosets, and wherein said embossing pattern comprises a plurality of features, described a plurality of features have about 10 nanometers to about 10 microns periodicity and about 10 nanometers to about 10 microns thickness.
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| US1600807P | 2007-12-21 | 2007-12-21 | |
| US61/016,008 | 2007-12-21 | ||
| PCT/US2008/085219 WO2009085533A2 (en) | 2007-12-21 | 2008-12-02 | Method and system for fabricating three-dimensional structures with sub-micron and micron features |
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| CN101903976A true CN101903976A (en) | 2010-12-01 |
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| US (1) | US8071277B2 (en) |
| EP (1) | EP2232529A4 (en) |
| JP (1) | JP2011507711A (en) |
| CN (1) | CN101903976A (en) |
| WO (1) | WO2009085533A2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103811390A (en) * | 2012-11-15 | 2014-05-21 | 隆达电子股份有限公司 | Die positioning device, die positioning system and die positioning method |
| CN109997078A (en) * | 2016-12-06 | 2019-07-09 | Ev 集团 E·索尔纳有限责任公司 | Method for being molded micron and/or nanostructure |
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| WO2010080378A1 (en) | 2008-12-19 | 2010-07-15 | 3M Innovative Properties Company | Method and system for fabricating nanostructure mass replication tool |
| US8367306B1 (en) * | 2009-07-13 | 2013-02-05 | Hrl Laboratories, Llc | Method of continuous or batch fabrication of large area polymer micro-truss structured materials |
| US8828873B2 (en) * | 2010-07-26 | 2014-09-09 | Hamamatsu Photonics K.K. | Method for manufacturing semiconductor device |
| KR101466833B1 (en) * | 2013-07-08 | 2014-11-28 | 코닝정밀소재 주식회사 | Light extraction substrate for oled, method of fabricating thereof and oled including the same |
| CN108351605B (en) * | 2016-01-27 | 2020-12-15 | 株式会社Lg化学 | Film mask, method for manufacturing the same, pattern forming method using the film mask, and pattern formed by the film mask |
| EP3410215B1 (en) | 2016-01-27 | 2020-06-17 | LG Chem, Ltd. | Film mask, method for manufacturing same, and method for forming pattern using film mask and pattern formed thereby |
| EP3410213B1 (en) | 2016-01-27 | 2021-05-26 | LG Chem, Ltd. | Film mask, method for manufacturing same, and method for forming pattern using film mask |
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| US4840757A (en) * | 1987-05-19 | 1989-06-20 | S. D. Warren Company | Replicating process for interference patterns |
| DE69405451T2 (en) * | 1993-03-16 | 1998-03-12 | Koninkl Philips Electronics Nv | Method and device for producing a structured relief image from cross-linked photoresist on a flat substrate surface |
| US5851674A (en) * | 1997-07-30 | 1998-12-22 | Minnesota Mining And Manufacturing Company | Antisoiling coatings for antireflective surfaces and methods of preparation |
| US6696157B1 (en) * | 2000-03-05 | 2004-02-24 | 3M Innovative Properties Company | Diamond-like glass thin films |
| DE10061297C2 (en) * | 2000-12-08 | 2003-05-28 | Siemens Ag | Procedure for structuring an OFET |
| US6849558B2 (en) * | 2002-05-22 | 2005-02-01 | The Board Of Trustees Of The Leland Stanford Junior University | Replication and transfer of microstructures and nanostructures |
| US6824882B2 (en) * | 2002-05-31 | 2004-11-30 | 3M Innovative Properties Company | Fluorinated phosphonic acids |
| US7618564B2 (en) * | 2003-03-21 | 2009-11-17 | Ovd Kinegram Ag | Microstructure and method for producing microstructures |
| ATE346852T1 (en) * | 2003-08-21 | 2006-12-15 | 3M Innovative Properties Co | PERFLUORPOLYETHERAMID BONDED PHOSPHONATES, PHOSPHATES AND DERIVATIVES THEREOF |
| WO2005054119A2 (en) * | 2003-12-01 | 2005-06-16 | The Board Of Trustees Of The University Of Illinois | Methods and devices for fabricating three-dimensional nanoscale structures |
| US20050124712A1 (en) * | 2003-12-05 | 2005-06-09 | 3M Innovative Properties Company | Process for producing photonic crystals |
| EP1758959A1 (en) * | 2004-05-07 | 2007-03-07 | 3M Innovative Properties Company | Stain repellent optical hard coating |
| US20080315459A1 (en) * | 2007-06-21 | 2008-12-25 | 3M Innovative Properties Company | Articles and methods for replication of microstructures and nanofeatures |
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- 2008-12-02 JP JP2010539587A patent/JP2011507711A/en not_active Withdrawn
- 2008-12-02 EP EP08868855A patent/EP2232529A4/en not_active Withdrawn
- 2008-12-02 WO PCT/US2008/085219 patent/WO2009085533A2/en active Application Filing
- 2008-12-02 CN CN2008801220406A patent/CN101903976A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103811390A (en) * | 2012-11-15 | 2014-05-21 | 隆达电子股份有限公司 | Die positioning device, die positioning system and die positioning method |
| CN103811390B (en) * | 2012-11-15 | 2016-05-11 | 隆达电子股份有限公司 | Die positioning device, die positioning system and die positioning method |
| CN109997078A (en) * | 2016-12-06 | 2019-07-09 | Ev 集团 E·索尔纳有限责任公司 | Method for being molded micron and/or nanostructure |
| CN109997078B (en) * | 2016-12-06 | 2023-03-31 | Ev 集团 E·索尔纳有限责任公司 | Method for embossing micro-and/or nano-structures |
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| Publication number | Publication date |
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| US8071277B2 (en) | 2011-12-06 |
| US20090162799A1 (en) | 2009-06-25 |
| EP2232529A4 (en) | 2011-03-16 |
| WO2009085533A3 (en) | 2009-09-11 |
| JP2011507711A (en) | 2011-03-10 |
| WO2009085533A2 (en) | 2009-07-09 |
| EP2232529A2 (en) | 2010-09-29 |
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