CN101900758A - Method for authenticating quality of triode with medium or low power by resistance method - Google Patents
Method for authenticating quality of triode with medium or low power by resistance method Download PDFInfo
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- CN101900758A CN101900758A CN2009101685611A CN200910168561A CN101900758A CN 101900758 A CN101900758 A CN 101900758A CN 2009101685611 A CN2009101685611 A CN 2009101685611A CN 200910168561 A CN200910168561 A CN 200910168561A CN 101900758 A CN101900758 A CN 101900758A
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Abstract
The invention relates to a method for authenticating the quality of a triode with medium or low power by a resistor method, solving the technical problems of multimeter gears, actually measured resistor range and quality authentication of the method for detecting junction resistors by using a multimeter. The invention adopts the scheme that (1) no matter what type of triode, forward resistors are measured at an R*10 gear, and backward resistors are measured at an R*10K gear; (2) for a PNP (Positive-Negative-Positive) type triode, the values of forward junction resistors be and bc are scores of ohms to hundreds of ohms, the value of a forward junction resistor ce is hundreds of ohms to infinite, and the values of the backward junction resistors be, bc and ce are scores of kilo-ohms; for a NPN (Negative-Positive-Negative) type triode, the values of the forward junction resistors be and ce are scores of ohms to hundreds of ohms, the value of the forward junction resistor ce is scores of kilo-ohms to infinite, the values of the backward junction resistors be and ce are hundreds of kilo-ohms to infinite, and the value of the backward junction resistor bc is infinite; and (3) within a technical theory value range, the larger the specific value of the backward junction resistors, the better; generally, the junction resistor value of a silicon tube is larger than that of a germanium tube; if the value of a forward/backward junction resistor is equal to a technical theoretical value, the quality of the triode is good; and when inner wires of a triode are broken, the values of all junction resistors are irregular.
Description
One, affiliated technical field
The present invention is that the relevant multimeter that utilizes detects middle low power triode junction resistance, to differentiate the innovative technology of its quality.
Two, with the relevant prior art of invention
Countries in the world can only detect 2 middle low power triode junction resistance resistances with multimeter now, can't measure 5 junction resistance resistances.In January, 1998, science and technology publishing house in Liaoning published, by the specialty director of the Institute of army of the Chinese People's Liberation Army, the senior engineer's authoritative works that the Hulin writes-" with multimeter detected electrons components and parts " of shutting out, the detection technique that this book is introduced also can only detect 2 data.Though in January, 1994, the People's Telecon Publishing House published, six junction resistance resistances have been listed in " overhauling colour television set (revised edition) " book of writing by Zhang Changsheng with multimeter, and with R * 10, R * 1K ohms range is measured, but those six resistance values are the technical know-how value, except a few countries can be measured to come out in the practical application the laboratory detects, even if the U.S., Japan and the Western European countries when detecting transistor, do not utilize yet.In my books and periodicals of this electronic technology more than 800, the transistorized content of related detection, even published in 2002, also reflect the technology that does not also have to detect at present 2 above junction resistance resistances.In fact no matter import still is homemade triode, although be high-quality, six non-technical know-how resistance values all can embody, and says nothing of to have met six technical know-how values.One does not also have transistor to survey forward and reverse junction resistance Standard resistance range at present again.These are exactly the problem that exists in the existing detection technique of transistor.This problem has limited the range of application of " electric-resistivity method " detection technique, also becomes the obstacle of forceful electric power electronic product development research.
Three, Fa Ming purpose
1, how to select multimeter ohms range gear actual measurement transistor junction resistance?
Is 2, transistorized each junction resistance is surveyed forward and reverse Standard resistance range what?
3, sum up the authentication technique of quality of transistors.
Four, Fa Ming technology contents
Present most PNP transistor is a germanium material, and most NPN type triodes are silicon materials.Now introduce the detection technique scheme of these two kinds of quality of transistors respectively.
(1) detection of positive-negative-positive triode quality
1, measures forward resistance
1) the multimeter range is allocated to R * 10 ohms ranges, and be, bc node positive resistance should be tens ohm to hundreds of Europe.
2) the multimeter range is allocated to R * 10 ohms ranges or R * 10K ohms range, and the ce forward resistance is that hundreds of Europe is to ∞.
2, survey back resistance
The multimeter range is allocated to R * 10k ohms range.Be, bc reverse junction resistance be tens kilo-ohms to ∞, ce reverse junction resistance is tens to do Europe to ∞.
The positive-negative-positive triode that meets above forward reverse resistance value is for being certified products.
(2) detection of NPN type triode quality
1, surveys forward resistance
1) the multimeter range is allocated to R * 10 ohms ranges, be, bc node positive resistance be tens ohm to hundreds of Europe.
2) the multimeter range is allocated to R * 10K ohms range, the ce forward resistance be several thousand kilo-ohms to ∞.
2, survey back resistance
The multimeter range is allocated to R * 10K ohms range, and be, ce reverse junction resistance are hundreds of kilo-ohm to ∞, and bc reverse junction resistance is ∞.
The NPN type triode that meets above data is certified products.
Brief summary: 1, positive-negative-positive or NPN type triode inside are under the situation of not short circuit, broken string, and the ratio of reverse junction resistance and node positive resistance is the bigger the better.But forward and reverse junction resistance minimum value can not be lower than the technical know-how value, and junction resistance is too small, poor stability, and such triode neither certified products.
2, detect positive-negative-positive triode quality the 1.2nd) in step and the 2nd step, the multimeter pointer can not move, moved some during actual measurement, only move the pipe of any by above data pointer, more moving during actual measurement, such triode is exactly a high-quality, also we can say forward and reverse junction resistance resistance near or the triode that equals the technical know-how value be exactly the high-quality triode.
3, detect NPN type triode quality the 1.2nd) in step and the 2nd step, indicating value should be the NPN type triode of ∞, the multimeter pointer has then moved some during actual measurement, move the pipe of any by data rule pointer, the beat of pointer gets more greatly during actual measurement, such NPN type triode is a high-quality, also we can say forward and reverse junction resistance resistance near or the NPN type triode that equals the technical know-how value be high-quality.
When 4, positive-negative-positive or NPN type triode junction resistance were ∞, if inner broken string, then all the other each interpolar junction resistance resistances just can not meet above forward and reverse Standard resistance range.
During 5, with R * 10 ohm actual measurement triode, if be or bc node positive resistance are ∞.Use R * 10k ohms range instead and measure very ∞, be or bc knot broken string is described.
6, survey positive-negative-positive or NN type triode with R * 10K ohms range,, use R * 10 ohms ranges instead and measure still zero if record be, bc or ce reverse junction resistance is 0
The short circuit of PN junction reverse breakdown is described.
Five, Fa Ming effect
Detection to the triode junction resistance, 2 data can only be measured in countries in the world, the present invention's conversion dexterously measures gear, R * 10K shelves will be mentioned on R * 1K shelves, increase measuring voltage, measured sensitivity and improved, also just successfully measured 5 data, the technology that makes multimeter detect quality of transistors has stepped a substantial step, is the variation of matter.What deserves to be mentioned is with R * 10K shelves and detect forward high resistant, especially back resistance, have only the microampere order undercurrent, can only say and to use R * 10K shelves to detect the forward low-resistance to burn out pipe.Conclude the judgment technology that has summed up the quality of transistors quality according to the actual detected empirical system in addition.Drawn the forward and reverse junction resistance Standard resistance range of actual measurement transistor by data analysis, and as the foundation of differentiating quality of transistors.The research that is improved to measuring instrument of this detection technique provides practicable thinking, promptly improves the multimeter operating voltage, increases sensitivity, measure six data and be expected to realize.The improvement of this detection technique is arranged again, make " electric-resistivity method " detection technique really reach the more perfect practical stage, and developed " method of substitution " technology, also make the forceful electric power Products Development research visual field more wide.
Six, accompanying drawing and explanation thereof
The upper left interval of description of drawings: Fig. 1 is for detecting forward and reverse junction resistance schematic diagram between PNP transistor bc.
Fig. 1 lower-left is interval for measuring forward and reverse junction resistance schematic diagram between positive-negative-positive triode be.
Fig. 1 is right interval for measuring forward and reverse junction resistance schematic diagram between positive-negative-positive triode ce.
The upper left interval of Fig. 2 is forward and reverse junction resistance schematic diagram between measuring N PN type triode bc.
Fig. 2 lower-left is interval for detecting forward and reverse junction resistance schematic diagram between NPN type triode be.
Fig. 2 is right interval for detecting forward and reverse junction resistance schematic diagram between NPN type triode ce.
The H-multimeter is measured high resistant;
The L-multimeter detects low-resistance;
The red test pencil of A-multimeter;
B-multimeter black meter pen;
The b-transistor base;
The c-transistor collector;
The e-transistor emitter.
Seven, realize the best way of invention
Example 1: with the 3DG12 transistor is example.This transistor is a silicon NPN type high frequency low power tube, detects with 500 type multimeters.
1) detect forward and reverse junction resistance between bc by Fig. 2, multimeter R * 10 grade detection forward resistance, the result is 120 Europe.Detect back resistance ∞ with R * 10k shelves.
2) detect forward and reverse junction resistance between be by Fig. 2.With R * 10 a grade survey forward resistance is 120 Europe.Surveying back resistance with R * 10k shelves is 300k.
3) press Fig. 2, and survey forward and reverse junction resistance between ce with R * 10k shelves.Forward resistance is ∞ as a result, and back resistance is 560 kilo-ohms.
So this triode is certified products.
Example 2 is judged the transistorized fault of 3DG6.
This triode is a silicon NPN type high frequency low-power transistor.Survey forward and reverse junction resistance between its bc by Fig. 1, multimeter pulls out and detects forward and reverse junction resistance to R * 10 ohms ranges and be zero, so can judge PN junction short circuit between bc.
Example 3, the fault of judgement 3DG6A.
This triode is a silicon NPN type high frequency low power tube, is ∞ by Fig. 2 with forward resistance between R * 10 ohms ranges detection be, and with R * 1k shelves, R * 10k shelves repetition measurement is ∞ still, and the inner broken string of this triode is described.
Claims (6)
1. electric-resistivity method is differentiated the invention of middle low power triode quality, can detect middle low power triode junction resistance, and has concluded the forward and reverse junction resistance Standard resistance range of actual measurement, it is characterized in that:
A, measurement positive-negative-positive triode forward resistance
1. the multimeter range pulls out to R * 10 ohms ranges, and be, bc node positive resistance should be tens ohm to hundreds of Europe;
2. the multimeter range pulls out to R * 10 ohms ranges or R * 10K ohms range, and the ce forward resistance is that hundreds of Europe is to ∞;
B, measurement positive-negative-positive triode back resistance
The multimeter range pulls out to R * 10K ohms range, be, bc, ce reverse junction resistance be tens kilo-ohms to ∞;
The positive-negative-positive triode that meets the forward reverse resistance value scope of steps A, B is certified products;
C, measuring N PN type triode forward resistance
1. the multimeter range pulls out to R * 10 ohms ranges, and be, bc node positive resistance are that tens Europe are to hundreds of Europe;
2. the multimeter range pulls out to R * 10K ohms range, the ce node positive resistance be several thousand kilo-ohms to ∞;
D, measuring N PN type triode back resistance
The multimeter range pulls out to R * 10K ohms range, and be, ce reverse junction resistance are hundreds of kilo-ohm to ∞, and bc reverse junction resistance is ∞;
The NPN type triode that meets step C, D data area is certified products.
2. differentiate the detection technique of middle low power triode quality according to the described electric-resistivity method of claim 1, it is characterized in that: positive-negative-positive or NPN type triode inside are under the situation of not short circuit, broken string in steps A, B, C, D, and the ratio of reverse junction resistance and node positive resistance is the bigger the better.But forward and reverse junction resistance minimum value can not be lower than the technical know-how value, and junction resistance is too small, poor stability, and such triode neither certified products.
3. differentiate the detection technique of middle low power triode quality according to the described electric-resistivity method of claim 1, it is characterized in that: I, steps A 2. with step B in the multimeter pointer can not move, it is the positive-negative-positive triode that indicating value should be ∞, the multimeter pointer has then moved some during actual measurement, only move the pipe of any by data rule pointer, the beat of pointer gets more greatly during actual measurement, such positive-negative-positive triode is exactly a high-quality, also we can say forward and reverse junction resistance resistance near or the positive-negative-positive triode that equals the technical know-how value be exactly high-quality;
II, step C 2. with step D in, indicating value should be the NPN type triode of ∞, the multimeter pointer has then moved some during actual measurement, move the pipe of any by data rule pointer, the beat of pointer gets more greatly during actual measurement, such NPN type triode is a high-quality, also we can say forward and reverse junction resistance resistance near or the NPN type triode that equals the technical know-how value be high-quality.
4. differentiate the detection technique of middle low power triode quality according to the described electric-resistivity method of claim 1, it is characterized in that: I, steps A 2. with B in, when positive-negative-positive triode junction resistance was ∞, if inner broken string, then all the other each interpolar junction resistance resistances just can not meet the data rule;
II, step C 2. with step D in, when the junction resistance of NPN type triode was ∞, if inner broken string, then all the other each interpolar junction resistance resistances did not meet the data rule.
5. differentiate the detection technique of middle low power triode quality according to the described electric-resistivity method of claim 1, it is characterized in that: 1) in steps A, when surveying PNP transistor with R * 10 ohms ranges, recording be or bc node positive resistance is ∞, use R * 10K ohms range measurement instead and still be ∞, be or bcPN knot broken string is described;
2) step C 1. in, during with R * 10 ohms ranges actual measurement NPN type triode, record be, the bc node positive resistance is ∞, use R * 10K ohms range instead and measure and still be ∞, then be or bcPN knot broken string.
6. differentiate the detection technique of middle low power triode quality according to the described electric-resistivity method of claim 1, it is characterized in that:
1) in step B, during with R * 10K ohms range actual measurement positive-negative-positive triode back resistance, if record be, bc or ce reverse junction resistance is 0, using that R * 10 ohms ranges measure instead still is 0, then PN junction reverse breakdown short circuit;
2) in step D, during with R * 10K ohms range actual measurement NPN type triode back resistance, if record be, bc or ce reverse junction resistance is 0, using that R * 10 ohms ranges measure instead still is 0, then PN junction reverse breakdown short circuit.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2009101685611A CN101900758A (en) | 2009-08-19 | 2009-08-19 | Method for authenticating quality of triode with medium or low power by resistance method |
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| CN2009101685611A CN101900758A (en) | 2009-08-19 | 2009-08-19 | Method for authenticating quality of triode with medium or low power by resistance method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103499758A (en) * | 2013-08-21 | 2014-01-08 | 深圳市晶导电子有限公司 | Audion cold solder joint judgment method and device thereof |
| CN112763835A (en) * | 2021-01-07 | 2021-05-07 | 广州高慧网络科技有限公司 | Transistor PN junction forward resistance detection device |
-
2009
- 2009-08-19 CN CN2009101685611A patent/CN101900758A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103499758A (en) * | 2013-08-21 | 2014-01-08 | 深圳市晶导电子有限公司 | Audion cold solder joint judgment method and device thereof |
| CN112763835A (en) * | 2021-01-07 | 2021-05-07 | 广州高慧网络科技有限公司 | Transistor PN junction forward resistance detection device |
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Application publication date: 20101201 |