CN101895258B - Circuit for controlling positive amplification coefficients of triode - Google Patents
Circuit for controlling positive amplification coefficients of triode Download PDFInfo
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- CN101895258B CN101895258B CN201010217626A CN201010217626A CN101895258B CN 101895258 B CN101895258 B CN 101895258B CN 201010217626 A CN201010217626 A CN 201010217626A CN 201010217626 A CN201010217626 A CN 201010217626A CN 101895258 B CN101895258 B CN 101895258B
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Abstract
The invention discloses a circuit for controlling positive amplification coefficients of a triode. One input end of an operational amplifier is coupled to a drain end of a main power switch tube of which the current is emitter current of the triode and the other input end of the operational amplifier is coupled to the drain end of a first MOS tube by using the operational amplifier and a second MOS tube so as to make voltages at both input ends of the operational amplifier equal, so that the current flowing through a first MOS tube is in proportion to the emitter current of the triode. The current of the first MOS tube flows through an image of a current mirror and is provided for a base electrode of the triode so that the base electrode current of the triode is in proportion to the emitter current and the aim of controlling the positive amplification coefficients of the triode is fulfilled. The positive amplification coefficients of the triode are not influenced by the manufacturing process and the ambient temperature of the triode so that the peak current of a primary coil is not influenced by the difference of the positive amplification coefficients of the triode.
Description
Technical field
The present invention relates to a kind of transistor control circuit, especially relate to a kind of circuit of controlling positive amplification coefficients of triode.
Background technology
In recent years, constant pressure and flow flyback power supply control IC (integrated circuit) has obtained developing apace and using, as is applied in the devices such as stand-by power supply of off-line type AC/DC power supply adaptor, charger and mobile device.
Fig. 1 has provided the circuit structure of the use triode of a kind of existing typical application in constant pressure and flow flyback power supply control IC (integrated circuit) as the primary coil switch; It comprises primary coil Lp, secondary coil Ls, triode T, master power switch pipe M0, pulse width modulator PWM, error amplifier EA, induction by current resistance R cs, the first divider resistance R1 and the second divider resistance R2; The termination of primary coil Lp is gone into input voltage vin; The other end of primary coil Lp is connected with the collector electrode of triode T; The base stage of triode T inserts base current; The emitter of triode T is connected with the drain electrode of master power switch pipe M0, and the source electrode of master power switch pipe M0 all is connected the second end ground connection of induction by current resistance R cs with substrate with first end of induction by current resistance R cs; Second end of the first divider resistance R1 is connected with first end of the second divider resistance R2; Its public connecting end is connected with the first input end of error amplifier EA, and second input of error amplifier EA inserts reference voltage ref, and the output of error amplifier EA is connected with second input of pulse width modulator PWM; The first input end of pulse width modulator PWM is connected with first end of induction by current resistance R es; The output of pulse width modulator PWM is connected with the grid of master power switch pipe M0, the second end ground connection of the second divider resistance R2, and first end of the first divider resistance R1 is connected with the end of secondary coil Ls through diode D1; First end of the first divider resistance R1 is connected with the other end of secondary coil Ls through the RC parallel branch; Output voltage V out is through the first divider resistance R1 and the second divider resistance R2 component voltage, and component voltage is coupled to first end of error amplifier EA, and second termination of error amplifier EA is gone into a reference voltage ref; Thereby can make the output of error amplifier EA export the error signal of output voltage V out; And being coupled to second input of pulse width modulator PWM, induction by current resistance R cs becomes voltage signal with the current conversion of master power switch pipe M0, and is coupled to the first input end of pulse width modulator PWM.There is difference in the actual peak current of primary coil Lp with the electric current of sensing through induction by current resistance R cs in the sort circuit structure; Analysis chart 1 can be known; The peak current of primary coil is Ic, and the electric current that induction by current resistance R cs senses is Ie, and the forward amplification coefficient that makes triode T is h
FE, Ic=h is then arranged
FE* Ie/ (h
FE+ 1), because the influence of triode manufacturing process and ambient temperature, the forward amplification coefficient of each triode is difference to some extent, thereby will cause the forward amplification coefficient variation of the output current of constant pressure and flow flyback power supply control IC (integrated circuit) with triode.
In sum, need seek the method for the variation of the output current that a kind of difference that can eliminate because of the forward amplification coefficient of triode causes.
Summary of the invention
Technical problem to be solved by this invention provides a kind of circuit of control of the forward amplification coefficient that can realize triode easily, and this circuit application can make the output current of constant pressure and flow flyback power supply control IC not receive the influence of difference of the forward amplification coefficient of triode when constant pressure and flow flyback power supply control IC.
The present invention solves the problems of the technologies described above the technical scheme that is adopted: a kind of circuit of controlling positive amplification coefficients of triode; Comprise first metal-oxide-semiconductor, second metal-oxide-semiconductor, operational amplifier, the induction by current resistance that primary coil, triode, master power switch pipe, the electric current that is used for the described master power switch pipe of ratio and type are identical with described master power switch pipe and be used for the current mirror of the electric current of described first metal-oxide-semiconductor of mirror image; First termination of described primary coil is gone into input voltage; Second end of described primary coil is connected with the collector electrode of described triode; The emitter of described triode is connected with the first input end of described operational amplifier and the drain electrode of described master power switch pipe respectively; The grid of the grid of described master power switch pipe and described first metal-oxide-semiconductor all inserts drive signal; The substrate of the substrate of described master power switch pipe and source electrode and described first metal-oxide-semiconductor and source electrode are all through described induction by current grounding through resistance; The drain electrode of described first metal-oxide-semiconductor is connected with source electrode with second input of described operational amplifier and the substrate of described second metal-oxide-semiconductor respectively; The grid of described second metal-oxide-semiconductor is connected with the output of described operational amplifier; The drain electrode of described second metal-oxide-semiconductor is connected with described current mirror, and the input of described current mirror inserts bias voltage, and the output of described current mirror is connected with the base stage of described triode.
Described triode is a NPN type triode, and described master power switch pipe is the N-channel MOS pipe, and described first metal-oxide-semiconductor is N-channel MOS pipe or N-channel MOS FET pipe, and described second metal-oxide-semiconductor is the N-channel MOS pipe.
Described operational amplifier and described second metal-oxide-semiconductor constitute a voltage follower.
Described current mirror mainly is made up of a P channel MOS tube, the 2nd P channel MOS tube, the 3rd P channel MOS tube and the 4th P channel MOS tube; The substrate of a described P channel MOS tube all is connected with the drain electrode of described second metal-oxide-semiconductor with drain electrode; The grid of the grid of a described P channel MOS tube and described the 2nd P channel MOS tube all inserts bias voltage; The source electrode of a described P channel MOS tube is connected with drain electrode with the substrate of described the 3rd P channel MOS tube respectively; The drain electrode of described the 3rd P channel MOS tube is connected with the grid of described the 3rd P channel MOS tube and the grid of described the 4th P channel MOS tube respectively; The equal cut-in operation voltage of the source electrode of the source electrode of described the 3rd P channel MOS tube and described the 4th P channel MOS tube; The substrate of described the 4th P channel MOS tube all is connected with the source electrode of described the 2nd P channel MOS tube with drain electrode, and the substrate of described the 2nd P channel MOS tube all is connected with the base stage of described triode with drain electrode.
Compared with prior art; The invention has the advantages that and utilize an operational amplifier and one second metal-oxide-semiconductor; Be coupled to the drain electrode end of master power switch pipe that electric current is the emitter current of triode through a input with operational amplifier; Another input of operational amplifier is coupled to the drain electrode end of first metal-oxide-semiconductor; Make the voltage of two input ends of operational amplifier equate that the electric current that flows through first metal-oxide-semiconductor like this will be proportional with the emitter current of triode, the current mirror mirror image flows through the electric current of first metal-oxide-semiconductor and offers the base stage of triode; Make that the base current and the emitter current of triode are proportional; Reached the purpose of the forward amplification coefficient of control triode, and the forward amplification coefficient of triode do not receive the influence of triode manufacturing process and ambient temperature, thereby make the peak current of primary coil not exerted an influence by the difference of the forward amplification coefficient of triode; When the circuit application of this control positive amplification coefficients of triode during in constant pressure and flow flyback power supply control IC, it can eliminate the variation of the output current of the constant pressure and flow flyback power supply control IC that the difference because of the forward amplification coefficient of triode causes effectively.
Description of drawings
Fig. 1 is the circuit structure diagram of the use triode of existing typical application in constant pressure and flow flyback power supply control IC (integrated circuit) as the primary coil switch;
Fig. 2 is the circuit structure diagram of control positive amplification coefficients of triode of the present invention.
Embodiment
Embodiment describes in further detail the present invention below in conjunction with accompanying drawing.
As shown in Figure 2; A kind of circuit of controlling positive amplification coefficients of triode; Comprise primary coil Lp, NPN type triode T, master power switch pipe M0, the first metal-oxide-semiconductor M1 that is used for the electric current of ratio master power switch pipe M0, the second metal-oxide-semiconductor M2, operational amplifier A MP, induction by current resistance R es and be used for the current mirror of the first metal-oxide-semiconductor M1 current mirror 1 to the base stage B of triode T; Master power switch pipe M0 adopts the N-channel MOS pipe; First termination of primary coil Lp is gone into input voltage vin; Second end of primary coil Lp is connected with the collector electrode C of triode T, and the electric current of the collector electrode of triode T is from primary coil Lp, and the emitter E of triode T is connected with the first input end of operational amplifier A MP and the drain electrode of master power switch pipe M0 respectively; The grid of master power switch pipe M0 and the grid of the first metal-oxide-semiconductor M1 all insert drive signal; The substrate of the substrate of master power switch pipe M0 and source electrode and the first metal-oxide-semiconductor M1 and source electrode are all through induction by current resistance R cs ground connection, and induction by current resistance R cs is used for the electric current and the electric current that flows through the first metal-oxide-semiconductor M1 that induced flow is crossed master power switch pipe M0, and the drain electrode of the first metal-oxide-semiconductor M1 is connected with source electrode with second input of operational amplifier A MP and the substrate of the second metal-oxide-semiconductor M2 respectively; The grid of the second metal-oxide-semiconductor M2 is connected with the output of operational amplifier A MP; The drain electrode of the second metal-oxide-semiconductor M2 is connected with current mirror 1, and the input of current mirror 1 inserts bias voltage Vbias, and the output of current mirror 1 is connected with the base stage B of triode T.At this; The master power switch pipe M0 and the first metal-oxide-semiconductor M1 need all adopt the pipe of same type; Promptly be the N raceway groove or be the P raceway groove, adopt the N-channel MOS pipe at this master power switch pipe M0, therefore the first metal-oxide-semiconductor M1 also adopts the N-channel MOS pipe; The first metal-oxide-semiconductor M1 also can adopt N-channel MOS FET (MetalOxide Semicoductor Field Effect Transistor, metal oxide semiconductor field effect tube) pipe; Second metal-oxide-semiconductor adopts the N-channel MOS pipe; Input voltage vin, bias voltage Vbias, drive signal and operating voltage provide by external circuit.
In this specific embodiment; The operational amplifier A MP and the second metal-oxide-semiconductor M2 constitute a voltage follower 2; Make the voltage at V1 place equal the voltage at V2 place; Even the voltage of the drain electrode end of the power switch pipe M0 of winner is identical with the voltage of the drain electrode end of the first metal-oxide-semiconductor M1,, promptly be the N channel-type because master power switch pipe M0 is identical with the type of the first metal-oxide-semiconductor M1; And the voltage of the source electrode of master power switch pipe M0 is identical with the voltage of the source electrode of the first metal-oxide-semiconductor M1; And the voltage of the grid of master power switch pipe M0 is also identical with the voltage of the grid of the first metal-oxide-semiconductor M1, and the electric current that flows through the electric current of master power switch pipe M0 like this and flow through the first metal-oxide-semiconductor M1 is with proportional, and the electric current that master power switch pipe M0 is flow through in order is I
M0, the electric current that the first metal-oxide-semiconductor M1 is flow through in order is I
M1, I
M1=I
M0(L1 * W0), wherein, W1 representes the channel width of the first metal-oxide-semiconductor M1 to * W1 * L0/, and L1 representes the channel length of the first metal-oxide-semiconductor M1, and W0 representes the channel width of master power switch pipe M0, and L0 representes the channel length of master power switch pipe M0.
In this specific embodiment; Current mirror 1 mainly is made up of a P channel MOS tube M3, the 2nd P channel MOS tube M4, the 3rd P channel MOS tube M5 and the 4th P channel MOS tube M6; The substrate of the one P channel MOS tube M3 all is connected with the drain electrode of the second metal-oxide-semiconductor M2 with drain electrode; The grid of the grid of the one P channel MOS tube M3 and the 2nd P channel MOS tube M4 all inserts a bias voltage Vbias; The source electrode of the one P channel MOS tube M3 is connected with drain electrode with the substrate of the 3rd P channel MOS tube M5 respectively; The drain electrode of the 3rd P channel MOS tube M5 is connected with the grid of the 3rd P channel MOS tube M5 and the grid of the 4th P channel MOS tube M6 respectively; The equal cut-in operation voltage of the source electrode of the source electrode of the 3rd P channel MOS tube M5 and the 4th P channel MOS tube M6, the substrate of the 4th P channel MOS tube M6 all is connected with the source electrode of the 2nd P channel MOS tube M4 with drain electrode, and the substrate of the 2nd P channel MOS tube M4 all is connected with the base stage B of triode T with drain electrode.Because a P channel MOS tube M3, the 2nd P channel MOS tube M4, the 3rd P channel MOS tube M5 and the 4th P channel MOS tube M6 constitute a current mirror 1; The electric current that flows through the 3rd P channel MOS tube M5 like this equals to flow through the electric current of the first metal-oxide-semiconductor M1; Thereby can obtain flowing through the electric current of the 4th P channel MOS tube M6, the electric current that the 3rd P channel MOS tube M5 is flow through in order is I
M5, the electric current that the 4th P channel MOS tube M6 is flow through in order is I
M6, I
M6=I
M5* W6 * L5/ (L6 * W5)=I
M1(L6 * W5), wherein, W6 representes the channel width of the 4th P channel MOS tube M6 to * W6 * L5/, and L6 representes the channel length of the 4th P channel MOS tube M6, and W5 representes the channel width of the 3rd P channel MOS tube M5, and L5 representes the channel length of the 3rd P channel MOS tube M5.
Claims (3)
1. circuit of controlling positive amplification coefficients of triode; The current mirror that it is characterized in that comprising first metal-oxide-semiconductor, second metal-oxide-semiconductor, operational amplifier, the induction by current resistance that primary coil, triode, master power switch pipe, the electric current that is used for the described master power switch pipe of ratio and type are identical with described master power switch pipe and be used for the electric current of described first metal-oxide-semiconductor of mirror image; First termination of described primary coil is gone into input voltage; Second end of described primary coil is connected with the collector electrode of described triode; The emitter of described triode is connected with the first input end of described operational amplifier and the drain electrode of described master power switch pipe respectively; The grid of the grid of described master power switch pipe and described first metal-oxide-semiconductor all inserts drive signal; The substrate of the substrate of described master power switch pipe and source electrode and described first metal-oxide-semiconductor and source electrode are all through described induction by current grounding through resistance; The drain electrode of described first metal-oxide-semiconductor is connected with source electrode with second input of described operational amplifier and the substrate of described second metal-oxide-semiconductor respectively; The grid of described second metal-oxide-semiconductor is connected with the output of described operational amplifier; The drain electrode of described second metal-oxide-semiconductor is connected with described current mirror, and the input of described current mirror inserts bias voltage, and the output of described current mirror is connected with the base stage of described triode; Described current mirror mainly is made up of a P channel MOS tube, the 2nd P channel MOS tube, the 3rd P channel MOS tube and the 4th P channel MOS tube; The substrate of a described P channel MOS tube all is connected with the drain electrode of described second metal-oxide-semiconductor with drain electrode; The grid of the grid of a described P channel MOS tube and described the 2nd P channel MOS tube all inserts bias voltage; The source electrode of a described P channel MOS tube is connected with drain electrode with the substrate of described the 3rd P channel MOS tube respectively; The drain electrode of described the 3rd P channel MOS tube is connected with the grid of described the 3rd P channel MOS tube and the grid of described the 4th P channel MOS tube respectively; The equal cut-in operation voltage of the source electrode of the source electrode of described the 3rd P channel MOS tube and described the 4th P channel MOS tube; The substrate of described the 4th P channel MOS tube all is connected with the source electrode of described the 2nd P channel MOS tube with drain electrode, and the substrate of described the 2nd P channel MOS tube all is connected with the base stage of described triode with drain electrode.
2. a kind of circuit of controlling positive amplification coefficients of triode according to claim 1; It is characterized in that described triode is a NPN type triode; Described master power switch pipe is the N-channel MOS pipe, and described first metal-oxide-semiconductor is the N-channel MOS pipe, and described second metal-oxide-semiconductor is the N-channel MOS pipe.
3. a kind of circuit of controlling positive amplification coefficients of triode according to claim 1 and 2 is characterized in that described operational amplifier and described second metal-oxide-semiconductor constitute a voltage follower.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010217626A CN101895258B (en) | 2010-06-29 | 2010-06-29 | Circuit for controlling positive amplification coefficients of triode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010217626A CN101895258B (en) | 2010-06-29 | 2010-06-29 | Circuit for controlling positive amplification coefficients of triode |
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| CN101895258A CN101895258A (en) | 2010-11-24 |
| CN101895258B true CN101895258B (en) | 2012-10-24 |
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| EP0936627A1 (en) * | 1998-02-13 | 1999-08-18 | STMicroelectronics S.r.l. | Low voltage non volatile memory sense amplifier |
| US6476680B2 (en) * | 2000-11-24 | 2002-11-05 | Nippon Precision Circuits, Inc. | Cascode amplifying circuit and folded cascode amplifying circuit |
| US6714081B1 (en) * | 2002-09-11 | 2004-03-30 | Motorola, Inc. | Active current bias network for compensating hot-carrier injection induced bias drift |
| US20040150381A1 (en) * | 2003-02-05 | 2004-08-05 | Douglas Blaine Butler | Bandgap reference circuit |
| CN101498950A (en) * | 2008-12-25 | 2009-08-05 | 四川登巅微电子有限公司 | Current mirror circuit with feedback regulation and method thereof |
| CN101567630A (en) * | 2009-05-27 | 2009-10-28 | 东南大学 | Inductive current induction circuit |
| CN201708767U (en) * | 2010-06-29 | 2011-01-12 | 日银Imp微电子有限公司 | Circuit for controlling the positive amplification coefficient of triode |
-
2010
- 2010-06-29 CN CN201010217626A patent/CN101895258B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0936627A1 (en) * | 1998-02-13 | 1999-08-18 | STMicroelectronics S.r.l. | Low voltage non volatile memory sense amplifier |
| US6476680B2 (en) * | 2000-11-24 | 2002-11-05 | Nippon Precision Circuits, Inc. | Cascode amplifying circuit and folded cascode amplifying circuit |
| US6714081B1 (en) * | 2002-09-11 | 2004-03-30 | Motorola, Inc. | Active current bias network for compensating hot-carrier injection induced bias drift |
| US20040150381A1 (en) * | 2003-02-05 | 2004-08-05 | Douglas Blaine Butler | Bandgap reference circuit |
| CN101498950A (en) * | 2008-12-25 | 2009-08-05 | 四川登巅微电子有限公司 | Current mirror circuit with feedback regulation and method thereof |
| CN101567630A (en) * | 2009-05-27 | 2009-10-28 | 东南大学 | Inductive current induction circuit |
| CN201708767U (en) * | 2010-06-29 | 2011-01-12 | 日银Imp微电子有限公司 | Circuit for controlling the positive amplification coefficient of triode |
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| Publication number | Publication date |
|---|---|
| CN101895258A (en) | 2010-11-24 |
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Effective date of registration: 20161207 Address after: 315809 Beilun City, Ningbo Province, Wan Chai street, Wan Jing Road, No. G, block, floor three, 12-3, 213 Patentee after: Core integrated circuit (Ningbo) Co., Ltd. Address before: Ningbo city science and Technology Park in Zhejiang province 315040 lease Poplar Road No. 7 Lane 578 Patentee before: Daily Silver IMP Microelectronics Co., Ltd. |