CN101874956A - Filter disc and preparation method thereof - Google Patents

Filter disc and preparation method thereof Download PDF

Info

Publication number
CN101874956A
CN101874956A CN2009103019992A CN200910301999A CN101874956A CN 101874956 A CN101874956 A CN 101874956A CN 2009103019992 A CN2009103019992 A CN 2009103019992A CN 200910301999 A CN200910301999 A CN 200910301999A CN 101874956 A CN101874956 A CN 101874956A
Authority
CN
China
Prior art keywords
hole
basic unit
filter
communicated
holes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN2009103019992A
Other languages
Chinese (zh)
Other versions
CN101874956B (en
Inventor
张仁淙
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
Original Assignee
Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hongfujin Precision Industry Shenzhen Co Ltd, Hon Hai Precision Industry Co Ltd filed Critical Hongfujin Precision Industry Shenzhen Co Ltd
Priority to CN 200910301999 priority Critical patent/CN101874956B/en
Publication of CN101874956A publication Critical patent/CN101874956A/en
Application granted granted Critical
Publication of CN101874956B publication Critical patent/CN101874956B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Abstract

The invention relates to a filter disc which comprises a first basic layer and a second basic layer, wherein the second basic layer is superimposed on the first basic layer. At least one first through hole is arranged in the first basic layer. Second through holes which have the same number with the first through holes and correspond to the first through holes are arranged in the second basic layer. Each first through hole is communicated with the corresponding second through hole, and the first through holes and the second through holes are staggered. The radial length of the communicated part of each first through hole and each second through hole is less than the aperture of each first through hole and each second through hole. Through the staggered arrangement of the first through holes on the first basic layer and the second through holes on the second basic layer, the radial length of the communicated part of each first through hole and each second through hole can be controlled. In addition, the invention also relates to a preparation method of the filter disc.

Description

Filter and preparation method thereof
Technical field
The present invention relates to a kind of filtering technique, relate in particular to a kind of filter and preparation method thereof.
Background technology
At present, existing a kind of method to gas filtration is to use the filter that has hole, and this filter allows the gas molecule littler than this hole to pass through, thereby reaches the purpose of the big gas molecule of this hole of specific filtration resistance.But when filtering less gas molecule, the aperture of this hole is difficult to be controlled at than in the also little size range of this gas molecule, thereby causes processing difficulties.
Summary of the invention
In view of this, be necessary to provide a kind of filter of more easily realizing the small-bore and preparation method thereof.
A kind of filter, it comprises one first basic unit and second basic unit that is layered in this first basic unit.Offer at least one first through hole in this first basic unit.Offer identical in this second basic unit with this first number of openings and with corresponding second through hole of this first through hole.Each first through hole is communicated with corresponding second through hole and this first through hole and this second through hole are crisscross arranged.The radical length of the part that this first through hole is communicated with this second through hole is less than the aperture of each first through hole and each second through hole.
A kind of method for preparing above-mentioned filter, it may further comprise the steps: one first basic unit is provided and offers at least one first through hole in this first basic unit; One second basic unit is provided and in this second basic unit, offer identical with this first number of openings and with corresponding second through hole of this first through hole; This second basic unit is layered in this first basic unit, each first through hole is communicated with and this first through hole is crisscross arranged with this second through hole with corresponding second through hole, respectively the radical length of the part that is communicated with second through hole of first through hole all reaches the respectively aperture of second through hole less than each first through hole.
Compared with prior art, above-mentioned filter and preparation method thereof by first through hole in first basic unit and second through hole in second basic unit are crisscross arranged, can be controlled the radical length of the part that this first through hole is communicated with this second through hole.In addition, the preparation method of this filter is simple.
Description of drawings
Fig. 1 is the schematic perspective view of filter provided by the invention.
Fig. 2 is that filter among Fig. 1 is along the cutaway view of II-II line.
Fig. 3 is the preparation method's of a filter provided by the invention flow chart.
The specific embodiment
For filter of the present invention and preparation method thereof is described further, lifts following embodiment and conjunction with figs. and be elaborated.
See also Fig. 1 and Fig. 2, a kind of filter 10, it comprises one first silicon substrate 11 and second silicon substrate 12 that is layered on this first silicon substrate 11.Be appreciated that this first silicon substrate 11 and second silicon substrate 12 also can be the substrate of other materials.
Offer seven first through holes 110 on this first silicon substrate 11, also offer seven second through holes 120 on this second silicon substrate 12.Each first through hole 110 is communicated with each second through hole 120 and this first through hole 110 is crisscross arranged with this second through hole 120, and the radical length of the part that each first through hole 110 is communicated with second through hole 120 all reaches the aperture of each second through hole 120 less than each first through hole 110.This first through hole 110 can be controlled in 10~1000 nanometer range with the radical length of the part that this second through hole 120 is communicated with.
Wherein, the shape of this first through hole 110 and this second through hole 120 can be for arbitrarily, for example: funnel-shaped hole and square opening etc.And adopting Wet-type etching in processing procedure upper hopper shape hole, square opening then adopts dry-etching, the easier processing of Wet-type etching by contrast.In the present embodiment, this first through hole 110 and this second through hole 120 be shaped as funnel-shaped hole, so, processing easily.
This second silicon substrate 12 is pasted techniques stack on this first silicon substrate 11 by chip.Preferably, these seven first through holes 110 are evenly distributed on this first silicon substrate 11, and the pitch of holes between seven first through holes 110 of the pitch of holes between these seven second through holes 120 and this is identical.So, in lamination process, aim at easily and can guarantee that the radical length of the part that this first through hole 110 is communicated with this second through hole 120 is roughly the same.
See also Fig. 3, a kind of method for preparing above-mentioned filter 10, it may further comprise the steps:
Step S10: one first silicon substrate 11 is provided and on this first silicon substrate 11, etches seven funnel shaped first through holes 110; Wherein, this first through hole 110 also can be square opening etc.Preferably, these seven first through holes 110 evenly are opened on this first silicon substrate 11.
Step S12: one second silicon substrate 12 is provided and on this second silicon substrate 12, etch seven infundibulates and with these first through hole, 110 corresponding second through holes 120; Wherein, the shape of this second through hole 120 also can be square opening etc.
In the present embodiment, the thickness of this first silicon substrate 11 is between 350 microns to 650 microns, the heavy caliber Φ 1 of funnel shaped first through hole 110 is between 50 microns to 200 microns, and the small-bore Φ 2 of funnel shaped first through hole 110 is between 10 microns to 100 microns.
Step S14: second silicon substrate 12 pasted by chip techniques stack each first through hole 110 on this first silicon substrate 11 is communicated with corresponding second through hole 120 and this first through hole 110 is crisscross arranged with this second through hole 120, the radical length of the part that each first through hole 110 is communicated with second through hole 120 all reaches the respectively aperture of second through hole 120 less than each first through hole 110.
Particularly, before stacked first as required budget at the edge of this second through hole 120 to the vertical range at the edge of this first through hole 110 corresponding with it, on this first silicon substrate 11, make sign then, the edge of second through hole 120 of this second silicon substrate 12 is aimed at this sign, pasted technology by chip at last this second silicon substrate 12 is layered on this first silicon substrate 11.Preferably, the pitch of holes between seven first through holes 110 of the pitch of holes between these seven second through holes 120 and this is identical.So, in lamination process, aim at easily and can guarantee that the radical length of the part that each first through hole 110 is communicated with second through hole 120 is roughly the same.In the present embodiment, this first through hole 110 can be controlled in 10~1000 nanometer range with the radical length of the part that this second through hole 120 is communicated with.
Wherein, this first through hole 110 and this second through hole 120 also can adopt the method for nano impression to be opened in respectively on this first silicon substrate 11 and this second silicon substrate 12.
In sum, above-mentioned filter and preparation method thereof by first through hole in first basic unit and second through hole in second basic unit are crisscross arranged, can be controlled the radical length of the part that this first through hole is communicated with this second through hole.In addition, the preparation method of this filter is simple.
Be understandable that, for the person of ordinary skill of the art, can make other various corresponding changes and distortion by technical conceive according to the present invention, and all these change the protection domain that all should belong to claim of the present invention with distortion.

Claims (10)

1. filter, it is characterized in that: it comprises one first basic unit and second basic unit that is layered in this first basic unit, offer at least one first through hole in this first basic unit, offer identical in this second basic unit with this first number of openings and with corresponding second through hole of this first through hole, each first through hole is communicated with corresponding second through hole and this first through hole is crisscross arranged with this second through hole, and respectively the radical length of the part that is communicated with second through hole of first through hole all reaches the respectively aperture of second through hole less than each first through hole.
2. filter as claimed in claim 1 is characterized in that: this first basic unit and this second basic unit are silicon substrate.
3. filter as claimed in claim 1 is characterized in that: this first through hole and this second through hole are funnel-shaped hole.
4. filter as claimed in claim 1 is characterized in that: this second link base layer is crossed chip and is pasted techniques stack in this first basic unit.
5. method for preparing filter, it may further comprise the steps:
One first basic unit is provided and in this first basic unit, offers at least one first through hole;
One second basic unit is provided and in this second basic unit, offer identical with this first number of openings and with corresponding second through hole of this first through hole;
This second basic unit is layered in this first basic unit, each first through hole is communicated with and this first through hole is crisscross arranged with this second through hole with corresponding second through hole, respectively the radical length of the part that is communicated with second through hole of first through hole all reaches the respectively aperture of second through hole less than each first through hole.
6. the method for preparing filter as claimed in claim 5 is characterized in that: second link base layer is crossed chip and is pasted techniques stack in this first basic unit.
7. the method for preparing filter as claimed in claim 5 is characterized in that: this first basic unit and this second basic unit are silicon substrate.
8. the method for preparing filter as claimed in claim 5 is characterized in that: this first through hole and this second through hole are funnel-shaped hole.
9. the method for preparing filter as claimed in claim 5 is characterized in that: this first through hole and this second through hole adopt etching method to be opened in respectively in this first basic unit and this second basic unit.
10. the method for preparing filter as claimed in claim 5 is characterized in that: this first through hole and this second through hole adopt the method for nano impression to be opened in respectively in this first basic unit and this second basic unit.
CN 200910301999 2009-04-30 2009-04-30 Filter disc and preparation method thereof Expired - Fee Related CN101874956B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 200910301999 CN101874956B (en) 2009-04-30 2009-04-30 Filter disc and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 200910301999 CN101874956B (en) 2009-04-30 2009-04-30 Filter disc and preparation method thereof

Publications (2)

Publication Number Publication Date
CN101874956A true CN101874956A (en) 2010-11-03
CN101874956B CN101874956B (en) 2013-10-09

Family

ID=43017700

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 200910301999 Expired - Fee Related CN101874956B (en) 2009-04-30 2009-04-30 Filter disc and preparation method thereof

Country Status (1)

Country Link
CN (1) CN101874956B (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB191321661A (en) * 1913-03-20 1914-01-22 Hans Bollinger Improved Means for Filtering Air.
CN2314842Y (en) * 1997-05-17 1999-04-21 毕可正 Multilayer porous air filter plate
JP2008045402A (en) * 2006-08-10 2008-02-28 Toyota Motor Corp Gas filtering device
CN101204636A (en) * 2006-12-22 2008-06-25 丁宏广 Airstrainer

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB191321661A (en) * 1913-03-20 1914-01-22 Hans Bollinger Improved Means for Filtering Air.
CN2314842Y (en) * 1997-05-17 1999-04-21 毕可正 Multilayer porous air filter plate
JP2008045402A (en) * 2006-08-10 2008-02-28 Toyota Motor Corp Gas filtering device
CN101204636A (en) * 2006-12-22 2008-06-25 丁宏广 Airstrainer

Also Published As

Publication number Publication date
CN101874956B (en) 2013-10-09

Similar Documents

Publication Publication Date Title
JP5882069B2 (en) Semiconductor device and manufacturing method thereof
WO2015066404A8 (en) Mitigating leaks in membranes
WO2012151482A3 (en) Multiblock copolymer films, methods of making same, and uses thereof
CN109890748A (en) MEMS microphone, its manufacturing method and electronic equipment
EP2051297A3 (en) Substrate dividing method
EP2508269A3 (en) Electromechanical transducer and method of producing the same
WO2015156874A3 (en) Integration of epitaxial lift-off solar cells with mini-parabolic concentrator arrays via printing method
WO2011106537A3 (en) Expanded composite filter media including nanofiber matrix and method
DE102016109101A1 (en) DEVICES FOR A MICROELECTROMECHANICAL SYSTEM
EP2028543A3 (en) Method of fabricating an integrated circuit using two mask layers
EP2202783A3 (en) Capacitor and method for fabricating the same
EP2489629A3 (en) Mems device having variable gap width and method of manufacture
WO2007100947A3 (en) Integrated micro fuel cell apparatus
WO2010117405A3 (en) Semiconductor processing
JP2009081357A5 (en)
TWI373450B (en) Microelectronic device and method for fabricating mems resonator thereof
CN101874956B (en) Filter disc and preparation method thereof
DE102009029184A1 (en) Production method for a capped micromechanical component, corresponding micromechanical component and cap for a micromechanical component
EP2031653A3 (en) Semiconductor device having multiple element formation regions and manufacturing method thereof
WO2008084839A1 (en) Resin-coated aluminum alloy sheet material for aluminum electrolytic capacitor case, case for aluminum electrolytic capacitor, and aluminum electrolytic capacitor
EP1801619A3 (en) Substrate comprising two antireflective silicone resin layers between an organic layer and a photoresist layer, method for producing the same and patterning process using the same
EP1847509A3 (en) Mechanical isolation for MEMS devices
WO2009063884A1 (en) Vaporization filter for humidification, vaporization filter laminate for humidification, and humidifying method using them
JP2017215473A5 (en)
JP2008041648A5 (en)

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20131009

Termination date: 20150430

EXPY Termination of patent right or utility model