CN101871787A - Thin-film magnetoresistive sensor - Google Patents
Thin-film magnetoresistive sensor Download PDFInfo
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- CN101871787A CN101871787A CN201010193327A CN201010193327A CN101871787A CN 101871787 A CN101871787 A CN 101871787A CN 201010193327 A CN201010193327 A CN 201010193327A CN 201010193327 A CN201010193327 A CN 201010193327A CN 101871787 A CN101871787 A CN 101871787A
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Abstract
The invention relates to a sensor, and particularly relates to thin-film magnetoresistive sensor, in particular to a sensor used for the equivalent detection of current, the position, the movement angle and the angular speed in a magnetic field. According to the technical scheme provided by the invention, the thin-film magnetoresistive sensor comprises a seed layer, a reference layer, a non-magnetic isolation layer and a free layer, wherein the reference layer is positioned on the seed layer and generates a first exchange coupling field; the non-magnetic isolation layer is positioned on the reference layer and isolates the reference layer and the free layer; and the free layer is positioned on the non-magnetic isolation layer, inducts the change of an external magnetic field and generates a second exchange coupling field, and the second exchange coupling field and the first exchange coupling field are mutually vertical. The invention has small hysteresis, high measurement accuracy and linearity, adjustable linear range, simple manufacturing process, high response frequency, low manufacturing cost and strong anti-jamming capability.
Description
Technical field
The present invention relates to a kind of sensor, especially a kind of thin-film magnetoresistive sensor, specifically a kind of magnetic field electric current, position, move angle of being used for, the sensor of angular velocity equivalent detection.
Background technology
Thin-film magnetoresistive sensor be widely used in data storage (hard disc of computer, MRAM), the fields of measurement such as translational speed, angle and angular velocity of current measurement, position measurement, object.
Thin-film magnetoresistive sensor has multi-layer film structure and spin valve structure.The multi-layer film structure of described thin-film magnetoresistive sensor comprises magnetosphere and nonmagnetic layer, and what they replaced is deposited on the substrate.The spin valve structure of described thin-film magnetoresistive sensor comprises non magnetic pinning layer (its material comprises MnIr or MnPt), (its material comprises CoFeB or CoFe to the magnetic nailed layer, or SAF structure C oFe/Ru/CoFe etc.), non magnetic separation layer (its material comprises Cu, AlO, MgO, HfO, ZrO or TaO etc.), the magnetic free layer (its material comprises CoFeB or CoFe, or SAF structure C oFe/Ru/CoFe etc.).
Thin-film magnetoresistive sensor because magnetic material itself has hysteresis, has backhaul poor when the analog quantity in the magnetic field is detected during measurement, have influence on the precision and the linearity that thin-film magnetoresistive sensor is measured.For fear of this phenomenon, adopt following method to adjust usually: 1, utilize the shape anisotropic of magnetic material to provide one to treat the measuring magnetic field bias magnetic field perpendicular to the external world; 2, around the thin-film magnetoresistive sensor element, deposition one deck permanent magnetic thin film provides one to treat measuring magnetic field bias magnetic field (hard disc of computer adopts this scheme) perpendicular to the external world by permanent magnetic thin film; 3, around the thin-film magnetoresistive sensor element, deposit an electric current line, provide a bias magnetic field by electric current.
Adopt the characteristics of the 1st kind of method to be: technology is simple, but the bias magnetic field that the shape anisotropic provides is limited, and has limited the design of chip.Adopt the characteristics of the 2nd kind of method to be: the big I of bias magnetic field is changed by the composition of reconciling permanent magnetic thin film and thickness, but to avoid the interference of big external magnetic field in actual applications, if the interference in big magnetic field is arranged, can change the direction of bias magnetic field, thereby influence the performance of sensor.Adopt the characteristics of the 3rd kind of method to be: the big I of bias magnetic field is reconciled by the size that changes electric current, but the power consumption of sensor can be very big.
Summary of the invention
The objective of the invention is to overcome the deficiencies in the prior art, a kind of thin-film magnetoresistive sensor is provided, its magnetic hysteresis is little, measuring accuracy and linearity height, adjustable linear range, manufacture craft is simple, response frequency is high, low cost of manufacture and antijamming capability are strong.
According to technical scheme provided by the invention, described thin-film magnetoresistive sensor comprises Seed Layer; Reference layer is positioned on the Seed Layer, produces first exchange coupling field; Non magnetic separation layer is positioned on the reference layer, and reference layer and free layer is isolated; Free layer is positioned on the non magnetic separation layer, and the induction external magnetic field changes, and produces second exchange coupling field, and described second exchange coupling field and first exchange coupling field are orthogonal.
On the described free layer protective seam is set.Described reference layer comprises the first non magnetic pinning layer and the first magnetic nailed layer; The described first non magnetic pinning layer is positioned on the Seed Layer, and the first magnetic nailed layer is positioned on the first non magnetic pinning layer; Produce first exchange coupling field between the described first non magnetic pinning layer and the first magnetic nailed layer.Described free layer comprises the second magnetic nailed layer and the second non magnetic pinning layer; The described second magnetic nailed layer is positioned on the non magnetic separation layer, and the second non magnetic pinning layer is positioned on the second magnetic nailed layer; Produce second exchange coupling field between the described second magnetic nailed layer and the second non magnetic pinning layer.
The material of described non magnetic separation layer comprises Cu, AlO, MgO, HFO, ZrO or TaO.The material of the described first non magnetic pinning layer and the second non magnetic pinning layer comprises MnIr or MnPt.The material of described protective seam comprises Ta, Pt or Ti.The material of the described first magnetic nailed layer and the second magnetic nailed layer comprises the composite bed that CoFeB, CoFe, NiFe or CoFe, Ru and CoFe form.
Advantage of the present invention: by reference layer and free layer are set on Seed Layer, by the variation of free layer induction external magnetic field; First exchange coupling field and second exchange coupling field that described reference layer and free layer produce are perpendicular, have reduced magnetic hysteresis, have improved the measuring accuracy and the linearity technology of magnetoresistive transducer.Described first exchange coupling field passes through the different of processing thickness and tempering process with second exchange coupling field, and when running into big magnetic interference, antijamming capability is strong, and implementing process is simple, can not influence the performance of magnetoresistive transducer, and can not increase the power consumption of sensor.By regulating the thickness of reference layer and free layer, can effectively adjust the measure linear scope of sensor, corresponding frequencies height, low cost of manufacture.
Description of drawings
Fig. 1 is a structural representation of the present invention.
Fig. 2 is a principle of work synoptic diagram of the present invention.
Fig. 3 is that the present invention is at half-bridge user mode catenation principle figure.
Fig. 4 is the principle of work synoptic diagram of Fig. 3.
Fig. 5 is that the present invention is at full-bridge user mode catenation principle figure.
Fig. 6 is the principle of work synoptic diagram of Fig. 5.
Embodiment
The invention will be further described below in conjunction with concrete drawings and Examples.
As shown in Figure 1: the present invention includes Seed Layer 1, the first non magnetic pinning layer 2, the first magnetic nailed layer 3, non magnetic separation layer 4, the second magnetic nailed layer, 5, second non magnetic pinning layer 6 and the protective seam 7.
As shown in Figure 1, described Seed Layer 1 is provided with the first non magnetic pinning layer 2, and the described first non magnetic pinning layer 2 is provided with the first magnetic nailed layer 3; The described first magnetic nailed layer 3 and the first non magnetic pinning layer 2 form reference layer, and produce first exchange coupling field; Described reference layer produces the reference layer magnetic moment direction of first exchange coupling field shown in 8.The first magnetic nailed layer 3 is provided with non magnetic isolation 4, and the material of described non magnetic isolation 4 can be Cu, AlO, MgO, HFO, ZrO or TaO.Non magnetic separation layer 4 is isolated with reference layer and free layer; Described free layer comprises the second magnetic nailed layer 5 and the second non magnetic pinning layer 6.The described second magnetic nailed layer 5 is positioned on the non magnetic separation layer 4, and the second magnetic nailed layer 5 is provided with the second non magnetic pinning layer 6.The described second magnetic nailed layer 5 and the second non magnetic pinning layer 6 form free layer, and produce second exchange coupling field, and the free layer magnetic moment direction of second exchange coupling field is shown in 9.The described second non magnetic pinning layer 6 is provided with protective seam 7, and the material of described protective seam 7 can be Ta, Pt or Ti.
The described first non magnetic pinning layer 2 is different with the Blocking temperature of the second non magnetic pinning layer 6, and the Blocking temperature of the first non magnetic pinning layer 2 will be higher than the Blocking temperature of the second non magnetic pinning layer 6 usually; The Blocking temperature of the described first non magnetic pinning layer 2 and the second non magnetic pinning layer 6 is controlled by the material and the thickness of the first non magnetic pinning layer 2 and the second non magnetic pinning layer 6.The material of the described first non magnetic pinning layer 2 and the second non magnetic pinning layer 6 can be MnIr or MnPt.
After the film of thin-film magnetoresistive sensor has plated, begin film is carried out tempering.Under the higher temperature and under the big external magnetic field effect of magnetic field intensity, the direction of first exchange coupling field of 3 generations of the first non magnetic pinning layer 2 and the first magnetic nailed layer is identical with the direction of external magnetic field.The field intensity of first exchange coupling field that the described first non magnetic pinning layer 2 and the first magnetic nailed layer 3 produce reaches several kilogausss.Under the lower temperature and under the big external magnetic field acting in conjunction of magnetic field intensity, the direction of second exchange coupling field of 6 generations of the second magnetic nailed layer 5 and the second non magnetic pinning layer is vertical with the direction of first exchange coupling field, and the field intensity of described second exchange coupling field is in Gausses up to a hundred.Described second exchange coupling field can be responded to the variation of external magnetic field, detects the corresponding detection limit in external magnetic field thereby finish.The material of the described first magnetic nailed layer 3 and the second magnetic nailed layer 5 can be the composite bed of CoFeB, CoFe, NiFe or CoFe, Ru and CoFe formation.
As shown in Figure 2, be principle of work synoptic diagram of the present invention.The magnetic resistance of thin-film magnetoresistive sensor is along with the corresponding free layer magnetic moment direction 9 of free layer changes with the variation of the angle of the corresponding reference layer magnetic moment direction 8 of reference layer.When the corresponding free layer magnetic moment direction 9 of free layer changed along with the change of the size and Orientation of externally-applied magnetic field 10, the magnetic resistance of thin-film magnetoresistive sensor also changed thereupon.When the corresponding reference layer magnetic moment direction of the direction of externally-applied magnetic field 10 and reference layer 8 was parallel, promptly the angle of 8 of the direction of externally-applied magnetic field 10 and reference layer magnetic moment direction was 0 degree; When the intensity of externally-applied magnetic field 10 is greater than H1 simultaneously, the corresponding free layer magnetic moment direction 9 of free layer is parallel with the direction of externally-applied magnetic field 10, and then the corresponding reference layer magnetic moment direction of the corresponding free layer magnetic moment direction 9 of free layer and reference layer 8 is parallel, shown in the directions of 11 expressions, the magnetic resistance minimum of thin-film magnetoresistive sensor element at this moment.When the direction and corresponding reference layer magnetic moment direction 8 antiparallels of reference layer of externally-applied magnetic field 10, promptly the angle of 8 of the direction of externally-applied magnetic field 10 and reference layer magnetic moment direction is 180 degree; When the intensity of externally-applied magnetic field 10 is greater than H2 simultaneously, the corresponding free layer magnetic moment direction 9 of free layer is parallel with the direction of externally-applied magnetic field 10, and then corresponding free layer magnetic moment direction 9 of free layer and corresponding reference layer magnetic moment direction 8 antiparallels of reference layer, shown in the directions of 12 expressions, the magnetic resistance maximum of thin-film magnetoresistive sensor element at this moment.Magnetic field range between H1 and the H2 is exactly the measurement range of thin-film magnetoresistive sensor, and when magnetic field range was between H1 and H2, thin-film magnetoresistive sensor had the measuring accuracy and the linearity preferably.Described magnetic field intensity H1, H2 can be by controlling realization to the thickness and the tempering process of the first non magnetic pinning layer 2, the first magnetic nailed layer 3, the second magnetic nailed layer 5 and the second non magnetic pinning layer 6, and technological operation is convenient and simple.
Fig. 3 and Fig. 4 are operated in catenation principle figure and principle of work synoptic diagram under the half-bridge user mode for the present invention.As shown in Figure 3, the described the first film magnetoresistive transducer 214 and second thin-film magnetoresistive sensor 215 have constituted the detecting element of half-bridge user mode.Wherein, the first film magnetoresistive element 214 corresponding reference layer magnetic moment direction 8 and second thin film magneto element, 215 corresponding reference layer magnetic moment direction 8 direction antiparallels.The first film magnetoresistive transducer 214 corresponding free layer magnetic moment direction 9 and second thin-film magnetoresistive sensor, 215 corresponding free layer magnetic moment direction 9 are parallel to each other.First electrode 211 and second electrode 212 are voltage input ends of thin-film magnetoresistive electric bridge half-bridge, and third electrode 213 is voltage output ends of thin-film magnetoresistive electric bridge half-bridge.
As shown in Figure 4, the fundamental diagram of forming the half-bridge electric bridge for thin-film magnetoresistive sensor.The output voltage V of thin-film magnetoresistive sensor electric bridge half-bridge is along with the direction of externally-applied magnetic field 10 changes with big or small change.When the direction of externally-applied magnetic field 10 for negative (-) and magnetic field intensity during greater than H1, the output voltage that detects thin-film magnetoresistive sensor half-bridge electric bridges from third electrode 213 is minimum.When the direction of externally-applied magnetic field 10 when just (+) and magnetic field intensity are greater than H2, the output voltage that detects thin-film magnetoresistive half-bridge electric bridges from third electrode 213 is the highest.Magnetic field range between H1 and the H2 is the measurement range of described thin-film magnetoresistive sensor half-bridge electric bridge.
Fig. 5 and Fig. 6 are operated in catenation principle figure and principle of work synoptic diagram under the full-bridge user mode for the present invention.As shown in Figure 5, described the 3rd thin-film magnetoresistive sensor 311, the four thin-film magnetoresistive sensors, 312, the five thin-film magnetoresistive sensors 313 and 314 of the 6th thin-film magnetoresistive sensors have constituted the detecting element of full-bridge user mode.Wherein, described the 3rd thin-film magnetoresistive sensor 311 and the 6th thin-film magnetoresistive sensor 314 corresponding reference layer magnetic moment direction 8 and the 4th thin-film magnetoresistive sensor 312, the five thin-film magnetoresistive sensors 313 corresponding reference layer magnetic moment direction 8 direction antiparallels; Described the 3rd thin-film magnetoresistive sensor 311, the four thin-film magnetoresistive sensors, 312, the five thin-film magnetoresistive sensors 313 and the 6th thin-film magnetoresistive sensor 314 corresponding free layer magnetic moment direction 9 are parallel to each other.The 4th electrode 315, the five electrodes 316 are voltage input ends of thin-film magnetoresistive sensor full-bridge electric bridge, and the 6th electrode 317, the seven electrodes 318 are voltage output ends of thin-film magnetoresistive sensor full-bridge electric bridge.
As shown in Figure 6, the principle of work of forming the electric bridge full-bridge for thin-film magnetoresistive sensor.The output voltage of described thin-film magnetoresistive sensor full-bridge electric bridge is V=Vout (+)-Vout (-)=317-318; Change along with the change of the direction of externally-applied magnetic field 10 and size.When the direction of externally-applied magnetic field 10 for negative (-) and magnetic field intensity during greater than H1, the output voltage of thin-film magnetoresistive sensor full-bridge electric bridge is minimum.When the direction of externally-applied magnetic field 10 when just (+) and magnetic field intensity are greater than H2, the output voltage of thin-film magnetoresistive sensor full-bridge electric bridge is the highest.Magnetic field range between H1 and the H2 is exactly the measurement range of thin-film magnetoresistive sensor electric bridge full-bridge.
The present invention is by being provided with reference layer and free layer, by the variation of free layer induction external magnetic field on Seed Layer 1; First exchange coupling field and second exchange coupling field that described reference layer and free layer produce are perpendicular, have reduced magnetic hysteresis, have improved the measuring accuracy and the linearity technology of magnetoresistive transducer.Described first exchange coupling field passes through the different of processing thickness and tempering process with second exchange coupling field, and when running into big magnetic interference, antijamming capability is strong, and implementing process is simple, can not influence the performance of magnetoresistive transducer, and can not increase the power consumption of sensor.By regulating the thickness of reference layer and free layer, can effectively adjust the measure linear scope of sensor, corresponding frequencies height, low cost of manufacture.
Claims (8)
1. a thin-film magnetoresistive sensor is characterized in that, comprising:
Seed Layer;
Reference layer is positioned on the Seed Layer, produces first exchange coupling field;
Non magnetic separation layer is positioned on the reference layer, and reference layer and free layer is isolated;
Free layer is positioned on the non magnetic separation layer, and the induction external magnetic field changes, and produces second exchange coupling field, and described second exchange coupling field and first exchange coupling field are orthogonal.
2. thin-film magnetoresistive sensor according to claim 1 is characterized in that: on the described free layer protective seam is set.
3. thin-film magnetoresistive sensor according to claim 1 is characterized in that: described reference layer comprises the first non magnetic pinning layer and the first magnetic nailed layer; The described first non magnetic pinning layer is positioned on the Seed Layer, and the first magnetic nailed layer is positioned on the first non magnetic pinning layer; Produce first exchange coupling field between the described first non magnetic pinning layer and the first magnetic nailed layer.
4. thin-film magnetoresistive sensor according to claim 1 is characterized in that: described free layer comprises the second magnetic nailed layer and the second non magnetic pinning layer; The described second magnetic nailed layer is positioned on the non magnetic separation layer, and the second non magnetic pinning layer is positioned on the second magnetic nailed layer; Produce second exchange coupling field between the described second magnetic nailed layer and the second non magnetic pinning layer.
5. thin-film magnetoresistive sensor according to claim 1 is characterized in that: the material of described non magnetic separation layer comprises Cu, AlO, MgO, HFO, ZrO or TaO.
6. according to claim 3 or 4 described thin-film magnetoresistive sensors, it is characterized in that: the material of the described first non magnetic pinning layer and the second non magnetic pinning layer comprises MnIr or MnPt.
7. thin-film magnetoresistive sensor according to claim 2 is characterized in that: the material of described protective seam comprises Ta, Pt or Ti.
8. according to claim 3 or 4 described thin-film magnetoresistive sensors, it is characterized in that: the material of the described first magnetic nailed layer and the second magnetic nailed layer comprises the composite bed that CoFeB, CoFe, NiFe or CoFe, Ru and CoFe form.
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| CN102680009A (en) * | 2012-06-20 | 2012-09-19 | 无锡乐尔科技有限公司 | Linear thin-film magnetoresistive sensor |
| CN102692242A (en) * | 2012-06-20 | 2012-09-26 | 无锡乐尔科技有限公司 | Linear thin-film magneto-resistive sensor equipped with magnetism gathering layer |
| CN102721427A (en) * | 2012-06-20 | 2012-10-10 | 无锡乐尔科技有限公司 | Thin-film magnetoresistive sensor element and thin-film magnetoresistive bridge |
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| CN116338537A (en) * | 2023-04-14 | 2023-06-27 | 珠海多创科技有限公司 | Magneto-resistance sensor, preparation method thereof and magnetic sensing device |
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| CN102288926A (en) * | 2010-11-30 | 2011-12-21 | 北京德锐磁星科技有限公司 | microcomputer electromagnetic sensor |
| CN102721427B (en) * | 2012-06-20 | 2015-05-20 | 宁波希磁电子科技有限公司 | Thin-film magnetoresistive sensor element and thin-film magnetoresistive bridge |
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| CN102692242B (en) * | 2012-06-20 | 2015-02-25 | 宁波希磁电子科技有限公司 | Linear thin-film magneto-resistive sensor equipped with magnetism gathering layer |
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| CN103076577B (en) * | 2012-08-03 | 2016-12-21 | 陈磊 | A kind of magnetoresistive sensor chip detecting magnetic field and acceleration |
| CN103076577A (en) * | 2012-08-03 | 2013-05-01 | 陈磊 | Design and manufacture technology of sensor chip for detecting magnetic field and acceleration |
| CN107923956A (en) * | 2015-06-09 | 2018-04-17 | Inl-国际伊比利亚纳米技术实验室 | Magnetoresistive sensor |
| CN105044631A (en) * | 2015-08-28 | 2015-11-11 | 江苏多维科技有限公司 | Half turning-over dual axle magneto resistance sensor |
| CN105044631B (en) * | 2015-08-28 | 2018-08-07 | 江苏多维科技有限公司 | A kind of half overturning two axial lines magnetic resistance sensor |
| CN105954692A (en) * | 2016-04-26 | 2016-09-21 | 中国科学院物理研究所 | Magnetic sensor with improved sensitivity and linearity |
| CN116338537A (en) * | 2023-04-14 | 2023-06-27 | 珠海多创科技有限公司 | Magneto-resistance sensor, preparation method thereof and magnetic sensing device |
| CN116338537B (en) * | 2023-04-14 | 2023-09-01 | 珠海多创科技有限公司 | Magneto-resistance sensor, preparation method thereof and magnetic sensing device |
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