CN101867305B - Converter valve - Google Patents
Converter valve Download PDFInfo
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- CN101867305B CN101867305B CN 201010140561 CN201010140561A CN101867305B CN 101867305 B CN101867305 B CN 101867305B CN 201010140561 CN201010140561 CN 201010140561 CN 201010140561 A CN201010140561 A CN 201010140561A CN 101867305 B CN101867305 B CN 101867305B
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- electric current
- valve
- semiconductor element
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Abstract
A converter valve unit comprises a plurality of semiconductor elements (1), freewheeling diodes (2) and control units (6) which are connected in parallel.
Description
Present patent application is that international filing date is the dividing an application for the patent application of " converter valve " that on March 31st, 2005, national applications number be 200580049300.8 denomination of invention.
Technical field
The present invention relates to power converter.The present invention be more particularly directed to comprise the converter valve of a plurality of converter valve unit that are connected in series.More accurately, the present invention relates to comprise the converter valve unit of a plurality of semiconductor elements.The invention still further relates to be used to the method for controlling this valve and valve cell.Especially, the present invention relates to for the valve cell of the power converter that High Level AC Voltage is converted to high voltage direct current and be used for the method for the electrical power flow of control converter.
Semiconductor element or the such statement of semiconductor should be interpreted as the semiconductor element for any kind of high power and high voltage applications.But this semiconductor is particularly including extinguishing type or turn-off type semiconductor.But the example of turn-off type power semiconductor is gate electrode capable of switching off (GTO) thyristor, and insulated gate bipolar transistor (IGBT).
Background technology
A kind of circuit of a plurality of unit with semiconductor element that comprises often consists of an integral part of power converter, and wherein they are used as power electronic switching.In the mode that is connected in series these switches are set, wherein each switch can remain on the part of the voltage that applies on the converter.Known power semiconductor can be kept 1 to 6kV voltage.By being connected in series a plurality of this switches, converter can be kept the voltage in 10 to the 500kV scopes.Each switch comprises a plurality of semiconductor elements that can be connected in series and/or be connected in parallel to obtain needed performance.Be connected in series the increase voltage value of keeping, be connected in series the increase current capacity.
In voltage-source type converter (VSC), electronic power switch comprises the turn-off type semiconductor.This converter is often used in high voltage direct current (HVDC) application, in order to direct current is transformed into alternating current or alternating current is transformed into direct current.This converter also is used in static reactive power compensator (SVC) and reactive power compensation (RPC) facility (plants), so that the electric power transfer in the balance electrical network.
Semiconductor such as GTO thyristor and IGBT is suitable for high power applications.The semiconductor of a rear type often is preferable because they with good power handling capability with so that they are well suited for the characteristic that is connected in series combines.They can be turn-offed by high precision ground.In this assembly, a plurality of IGBT form the valve in the voltage-source type converters in order to process voltage up to 500kV.
In semiconductor circuit, situation may be short-circuited.In this case, need to process the impact of short circuit.Because overcurrent or overvoltage when breakdown, this semiconductor no longer can keep voltage when semiconductor.The semiconductor that damages can not be controlled.It only can keep little voltage difference, and when conduction, will only have low resistance.A kind of performance of making us unhappy is that heat produces.Make the semiconductor that electric current flows through damage will produce the electric arc that pressure drop is approximately 10-20V, described electric arc will produce a large amount of power consumptions.This can develop into the fusing of assembly or develop into the fire that damages whole valve.
Converter valve comprises a plurality of semiconductor valves unit that is connected in series.In these valve cells each is designed to process the determining section of whole voltages of described valve, and the total current of transmission valve.Each valve cell comprises a plurality of semiconductor elements that are connected in parallel.So each semiconductor element that is connected in parallel is designed to transmit the part by the total current of valve cell.Now, if an inefficacy in these semiconductor elements, that valve cell will no longer can keep voltage difference so.When whole valve is controlled to closed circuit, the part of described electric current or total current will by out of order semiconductor, therefore cause heat to produce.
For fear of this situation, employed semiconductor element is included in the special characteristic that closed circuit has occured to present afterwards in serious puncture now.By presenting closed circuit, will not have heat and in out of order semiconductor, produce.Therefore, in described situation, the semiconductor element in a valve cell can also transmit the electric current identical with the electric current of transmission when all semiconductor elements are effective.Therefore, when one in the semiconductor in the valve cell lost efficacy, control other semiconductor in this unit to present stable closed circuit.This will cause this unit no longer can keep voltage, but still can conduction current and do not have heat to produce.
Yet from the voltage aspect, disabling unit will not bear any voltage, because the always short circuit of at least one semiconductor unit.This impact that has is that the voltage of usually being shared by a plurality of switch elements that applies on the valve can only be cut apart by the similar number except now.Because the number of the unit that is connected in series is usually in 100 to 500 scope, so the voltage overload is in 0.2 to 10% scope.This is fully in the voltage overload capacity of semiconductor element.
Use is for these situations and the technology of specially designed semiconductor element has played extraordinary effect.Yet it is very expensive producing these semiconductor elements.Therefore, need in the situation that still realizes identical performance, reduce the cost of this converter.
Summary of the invention
Main purpose of the present invention provides the converter valve unit that comprises semiconductor element, can deal with the semi-conductive impact of fault.The second purpose provides sensing system to detect out of order semiconductor element.
A first aspect of the present invention provides a kind of converter valve unit, and this converter valve unit comprises semiconductor element, and each semiconductor element is connected with a fly-wheel diode inverse parallel and is controlled by a control unit.A second aspect of the present invention provides a kind of method be used to controlling above-mentioned converter valve unit.
According to the present invention, detect the fault semiconductor of valve cell by the semi-conductive electric current of valve cell by sensing.When detecting the fault semiconductor, all the other semiconductors of this valve cell are controlled as and present closed circuit.In one embodiment of the invention, the electric current of each semiconductor element in each valve cell is sensed.In a second embodiment, single-sensor detects any semiconductor element in this unit in each valve cell fault is set.Preferably, the semiconductor of each unit of valve is configured to two groups.Preferably, every group of semiconductor that comprises equal amount.
In an embodiment of the present invention, first group of semi-conductive wire is arranged to pass through sensing apparatus with first direction.Second group of semi-conductive wire is arranged to pass through sensing apparatus with second direction.It is opposite with first direction that second direction is set.When all semiconductors work, with the electric current summation of first direction by this sensing apparatus with will equate with the electric current summation of second direction by this sensing apparatus.Yet when losing efficacy for one in the semiconductor, the electric current summation of first direction will be different from the electric current summation of second direction.Therefore, can detect the inefficacy semiconductor by the current balance type between two groups of wires of sensing.
According to the present invention, the use of sensing system and control system can be designed by a plurality of semiconductor elements of common " leaving unused " type converter valve unit.Like this, when sensing defective semiconductor, all semiconductors of this valve cell are controlled so as to conducting level (stage).This causes this valve cell short circuit, and does not bear any voltage.In this case, remaining valve cell that is connected in series is with the voltage on the necessary maintaining valve.As a result, each valve cell that still works must keep the more parts of whole threshold voltage.
Sensing cell is set comes current sensor.The transducer of the first kind is the small resistor in the current path, determines voltage thereon.The transducer of Second Type is the device of the change of flux that can sensing be produced by electric current.Such transducer is the ring such as the such magnetisable material of ferrite, and it comprises that electric coil around described loop section is so that sensing passes the electric current of described ring.The electric coil that another transducer is just formed by the conductor that insulate, its senses flow is crossed the electric current of coil.Also having another transducer is Rogowski (Rogowski) coil, and it is the hollow loop coil that arranges around this conductor.
In the state that all semiconductor elements all work, equal from second group of electric current summation semi-conductive, that flow with second direction from first group of electric current summation semi-conductive, that flow with first direction.The magnetic flux that the magnetic flux that is produced by the electric current of first direction will produce with the electric current by second direction equates.Therefore, the transducer of Second Type in this case with sensing less than what.Damaged thereby can only the strip resistance conduction current at a semiconductor of first group, and can not keep in the situation of voltage difference, will be less than the electric current that conducts by second group by first group of electric current that conducts.Therefore, a transducer by a Second Type can detect out of order semiconductor rapidly.Which group that transducer also detects in two groups comprises out of order element.When being stopped, this valve can use this information so that maintenance.
In a first aspect of the present invention, realize this purpose by the converter valve unit that comprises a plurality of semiconductor elements that are connected in parallel, wherein this converter valve unit comprises for the current sensing device of sensing semiconductor electric current with for the control device that all semiconductors controls of this unit is become the conducting level when detecting out of order semiconductor.In the embodiment aspect this, described semiconductor element comprises having with first group of the wire of first direction by this sensing apparatus and have with the wire of second direction by this sensing apparatus second group.In the another embodiment aspect this, described first direction is opposite with described second direction.
In a second aspect of the present invention, realize described purpose by the method for detection of the semiconductor element in the converter valve unit, wherein said element is set to first group and second group.Described first group electric current is configured to pass through sensing apparatus with first direction, and described second group electric current is configured to second direction by this sensing apparatus.Then the difference between current that flows through this sensing apparatus is used for detecting the semi-conductive existence of damage.
Description of drawings
According to following detailed description, for those skilled in the art, it is more obvious that other features and advantages of the present invention will become by reference to the accompanying drawings.Wherein:
Fig. 1 is the sketch that the phase branch road of power converter is shown,
Fig. 2 is the semi-conductive setting according to valve cell of the present invention,
Fig. 3 arranges according to semi-conductive second of valve cell of the present invention, and
Fig. 4 is the Rogowski coil.
Embodiment
The schematically illustrated phase branch road that can use high voltage current changer circuit of the present invention of Fig. 1.Three phase branch roads that share a DC capacitor 3 are arranged in the facility that is connected to the three-phase alternating current electric network (plant) usually.The phase branch road comprises the first and second valves, only has wherein that second valve 8 is identified in Fig. 1 to be gone out.Each valve comprises a plurality of valve cells 9, wherein only has one identifiedly to go out.Each valve cell comprises power semiconductor, and described power semiconductor comprises semiconductor 1, the so-called fly-wheel diode 2 that is connected with this semiconductor inverse parallel and is used for this semi-conductive control device 6 of control.In illustrated embodiment, semiconductor is IGBT.In the practice, the number of the valve cell that is connected in series pointed number in Fig. 1.
The valve cell that is connected in series and DC capacitor 3 are connected in parallel.Terminal 4 between the first valve and the second valve 8 is connected to a for example phase (not shown) of AC voltage network through phase reactor 5.
By the signal from driver element 6, all power semiconductors in the IGBT valve (each is schematically pointed out) are connected simultaneously, so that when needing positive potential at phase terminal 4 places, power semiconductor conducting in the one IGBT valve, and when when phase terminal 4 needs negative potential, the power semiconductor conducting in the 2nd IGBT valve.
By coming the power ratio control semiconductor device according to pulse-width modulation (PWM) pattern of determining, direct voltage on the DC capacitor 3 can be used for producing voltage at phase terminal 4 places, and the fundametal compoment of this voltage is the alternating voltage with expectation amplitude, frequency and phase place.Such control is to be undertaken by control impuls is sent to different driver elements from control appliance 7.Communication be by the second communication bundle 11 through optical fiber receive from the information of valve cell with realize through the first bundle 10 transmission command pulses of communicate by letter.
The first embodiment of converter valve unit is shown among Fig. 2.In this enforcement, four semiconductors are connected in parallel between the first tie point 19 and the second tie point.Valve cell also comprises current sensing device 12.Semiconductor is set to first group 13 and second groups 14, and each semiconductor has emitter E, collector electrode C and grid G.Conducting path 15,16 in first group is arranged to pass sensing apparatus 12 with first direction.Conducting path 17,18 in second group is arranged to pass sensing apparatus 12 with second direction.This sensing apparatus comprises the device that can detect magnetic flux.Therefore, when the electric current in all paths equates, equal magnetic flux from second group from first group magnetic flux, sensing device senses is to the magnetic flux that is not produced by the electric current in the path thus.Yet if in the semiconductor is damaged, thereby internal resistance increases, and will there are differences between the magnetic flux that is produced by the current path of first group current path and second group so.Therefore, when one in the semiconductor of valve cell when damaged, only just can detect semi-conductive existence damage or out of order by means of a transducer.
The second embodiment according to valve cell of the present invention is illustrated among Fig. 3, and this valve cell comprises four semiconductor units, and described semiconductor unit comprises the turn-off type semiconductor element 1 that is connected with fly-wheel diode 2 inverse parallels.Each semiconductor unit is included in the current path 15,16,17 and 18 that is connected in parallel between the first tie point 19 and the second tie point 20.For clear, only have leftmost semiconductor unit to have reference number.Each semiconductor unit is controlled by the control device 6 that is also referred to as door control unit.In this embodiment, each semi-conductive emitter E is connected to the second grid point 20 via sensing cell 12, in order to be connected in series with next valve cell in the valve.In the embodiment shown, transducer 12 comprises resistor.In the valve cell that all semiconductors work, for each semiconductor in this unit, the voltage in resistor downstream should equate or is almost equal.Differentiator 21 compares the voltage signal 23 in downstream, and when detecting imbalance in these voltage signals, and connection signal 22 is sent to all semiconductors or door control unit in the valve cell.
Compare with the semiconductor that does not have to damage, the semiconductor of damage will present larger internal resistance.Thereby, when conducting, less electric current will be arranged by out of order semiconductor.Therefore, by according to Fig. 2 or method current sensor shown in Figure 3, out of order semi-conductive the appearance is detectable.
When detecting out of order semiconductor, all control units 12 (Fig. 3) of the control unit 6 of this unit (Fig. 1) or valve cell are ordered all semiconductors of the same valve cell of control to become the closed circuit level.
The transducer of Rogowski coil is shown among Fig. 4.One of most important characteristic of Rogowski coil measuring system is: it is the intrinsic linearity.This coil does not comprise saturable assembly, and its output increases linearly with electric current is proportional, until by the determined working limit of puncture voltage.Integrator also is the intrinsic linearity, until the saturated point of electronic device.Linearity so that the Rogowski coil be easy to be calibrated because transducer can be in office what be calibrated at the current level place easily, and this calibration will be accurately for all electric currents, comprise more very large electric currents.And, because their linearity, so transducer has the dynamic range of non-constant width and fabulous transient response.
Although embodiments of the invention are preferable, scope of the present invention is not limited to these embodiment that propose, but also comprises for those skilled in the art apparent embodiment.For example, can comprise any feasible, known checkout gear for those skilled in the art for detection of out of order semi-conductive sensing cell.
Claims (2)
1. converter valve unit, comprise a plurality of semiconductor elements that are connected in parallel (1), each described semiconductor element (1) is connected with a fly-wheel diode (2) inverse parallel and is controlled by a control unit (6), it is characterized in that: the emitter E of each described semiconductor element that is connected in parallel (1) is connected to the current sensing device (12) for the electric current that comes each described semiconductor element (1) of sensing by the measurement to the voltage on it, and described valve cell further comprises for the differentiator (21) that comes more described electric current by more described voltage, described differentiator (21) sends connection signal (22) to all control units (6) when detecting described electric current existence imbalance, all described semiconductor elements that are used for controlling described valve cell present closed circuit, and wherein said sensing apparatus (12) is the resistor in the current path of each described semiconductor element (1).
2. one kind is used for control and comprises a plurality of semiconductor elements (1), the method of the converter valve unit of fly-wheel diode (2) and control unit (6), each described semiconductor element (1) is connected with described fly-wheel diode (a 2) inverse parallel and is controlled by a described control unit (6), it is characterized in that: the voltage that is connected to by measurement on the current sensing device (12) of emitter E of described semiconductor element (1) comes sensing to pass through the electric current of each described semiconductor element (1), come more described electric current by differentiator (21) by more described voltage, when detecting described electric current existence imbalance, provide signal by described control unit (6), all semiconductor elements that are used for controlling described valve cell present closed circuit, and wherein said sensing apparatus (12) is the resistor in the current path of each described semiconductor element (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010140561 CN101867305B (en) | 2005-03-31 | 2005-03-31 | Converter valve |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010140561 CN101867305B (en) | 2005-03-31 | 2005-03-31 | Converter valve |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2005800493008A Division CN101147307B (en) | 2005-03-31 | 2005-03-31 | Converter valve |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101867305A CN101867305A (en) | 2010-10-20 |
| CN101867305B true CN101867305B (en) | 2013-05-01 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010140561 Expired - Fee Related CN101867305B (en) | 2005-03-31 | 2005-03-31 | Converter valve |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101867305B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3986103A (en) * | 1973-12-05 | 1976-10-12 | Siemens Aktiengesellschaft | Monitoring circuit for a plurality of valves |
| CN1384574A (en) * | 2001-05-07 | 2002-12-11 | 株式会社东芝 | Electric power converter |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003009508A (en) * | 2001-06-19 | 2003-01-10 | Mitsubishi Electric Corp | Power semiconductor device |
-
2005
- 2005-03-31 CN CN 201010140561 patent/CN101867305B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3986103A (en) * | 1973-12-05 | 1976-10-12 | Siemens Aktiengesellschaft | Monitoring circuit for a plurality of valves |
| CN1384574A (en) * | 2001-05-07 | 2002-12-11 | 株式会社东芝 | Electric power converter |
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| Publication number | Publication date |
|---|---|
| CN101867305A (en) | 2010-10-20 |
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Granted publication date: 20130501 Termination date: 20170331 |