CN101867073B - Terahertz wave switch device and method thereof - Google Patents
Terahertz wave switch device and method thereof Download PDFInfo
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- CN101867073B CN101867073B CN 201010182535 CN201010182535A CN101867073B CN 101867073 B CN101867073 B CN 101867073B CN 201010182535 CN201010182535 CN 201010182535 CN 201010182535 A CN201010182535 A CN 201010182535A CN 101867073 B CN101867073 B CN 101867073B
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- isosceles trapezoid
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Abstract
The invention discloses a terahertz wave switch device and a method thereof. The terahertz wave switch method comprises the following steps that: when a magnetic field device is provided with no external magnetic field, terahertz wave is input from a terahertz wave input end, vertically enters the lower bottom surface of an isosceles trapezoidal glass prism from the side surface of a short side of a rectangle on the lower bottom surface of the isosceles trapezoidal glass prism, is vertically output to a first terahertz wave output end after being reflected, and a terahertz wave detector detects the output terahertz wave; and when the magnetic field device is provided with an external magnetic field, the magnetic permeability of a magnetic film is changed, an optical path is shifted, the terahertz wave is reflected on the lower bottom surface of the isosceles trapezoidal glass prism and is vertically output to a second terahertz wave output end, and the terahertz wave detector cannot detect the output terahertz wave at this time. The terahertz wave switch device has the advantages of compact structure, high response speed, convenient adjustment and low manufacturing cost, and meets the requirements on the application in terahertz wave imaging, medical diagnosis, terahertz wave communication, terahertz wave space astronomy and other fields.
Description
Technical field
The present invention relates to the THz wave applied technical field, be specifically related to a kind of terahertz wave switch device and method thereof.
Background technology
THz wave refers to frequency at 0.1～10THz, and wavelength is the electromagnetic wave in 3000～30 micrometer ranges.It coincides in long-wave band and millimeter wave, and coincides at short-wave band and infrared ray.THz wave is occupied very special position in electromagnetic spectrum.Because the problem of Terahertz wave source is failed fine solution in the long duration, the development of THz wave science and technology is very restricted, and fails to bring into play thereby make it use potential.Terahertz wave source and checkout gear have successfully been developed in the world at present.Research finds that THz wave is safer as a kind of high-frequency electromagnetic Bob X ray, is applied to many fields such as medical diagnosis, safety inspection, biomedicine, agricultural, space astronomy, Non-Destructive Testing and Terahertz communication.Because the wide application prospect of THz wave, countries in the world are all very paid attention to for the research of THz wave science and technology.
The THz wave science and technology has obtained the extensive concern of international academic community now, and in recent years, the research institution about THz wave emerges in multitude in the world, and has obtained a lot of achievements in research.The function element of current THz wave is the Focal point and difficult point during the THz wave science and technology is used, and the function element research for THz wave both at home and abroad also launches gradually.Existing THz wave function element also seldom, their complex structures, volume are larger, expensive usually, so miniaturization, the THz wave device is the key that the THz wave technology is used cheaply.
The THz wave switch is a kind of very important THz wave device, research finds that the THz wave switch all has broad application prospects in THz wave applications such as THz wave imaging, THz wave medical diagnosis, THz wave communication, THz wave space astronomys, but existing THz wave construction of switch is complicated, making difficulty, expensive.
Summary of the invention
The objective of the invention is to overcome the deficiencies in the prior art, a kind of terahertz wave switch device and method thereof are provided.
Terahertz wave switch device comprises THz wave input, THz wave the first output, terahertz wave detector, THz wave the second output, isosceles trapezoid glass prism, magnetic field device, magnetic thin film, matrix; Be provided with the variable magnetic thin film of magnetic permeability at matrix, matrix and magnetic thin film are cuboid, be provided with the isosceles trapezoid glass prism in the middle of on the variable magnetic thin film of magnetic permeability, on the isosceles trapezoid glass prism, bottom surface is rectangle, it is parallel that the variable magnetic thin film cuboid of the long limit of the rectangle of isosceles trapezoid glass prism bottom surface and magnetic permeability is grown the limit, both sides are provided with magnetic field device on the variable magnetic thin film of magnetic permeability, magnetic field device is cuboid, the long limit of magnetic field device cuboid is parallel with the rectangle minor face of isosceles trapezoid glass prism bottom surface, be provided with the THz wave first input end in isosceles trapezoid glass prism bottom surface rectangle one short side, be provided with THz wave the first output and THz wave the second output in another short side of isosceles trapezoid glass prism bottom surface rectangle, be provided with terahertz wave detector in THz wave the first output corresponding section, THz wave is inputted from isosceles trapezoid glass prism bottom surface rectangle THz wave input, enter the isosceles trapezoid glass prism, after THz wave the first output or the output of THz wave the second output, surveyed the THz wave of output by terahertz wave detector after reflection.
Two trapezoidal base angles of described isosceles trapezoid glass prism equate, are 10 °～60 °.The thickness of described magnetic thin film is 5～50 μ m.
The THz wave method of switching is: when magnetic field device during without externally-applied magnetic field, THz wave is inputted from the THz wave input, impinge perpendicularly on isosceles trapezoid glass prism bottom surface from isosceles trapezoid glass prism bottom surface rectangle one short side, THz wave is after the reflection of isosceles trapezoid glass prism bottom surface, be vertically injected to THz wave the first output from another short side of isosceles trapezoid glass prism bottom surface rectangle, surveyed the THz wave of output by terahertz wave detector; When magnetic field device has externally-applied magnetic field, the magnetic permeability of magnetic thin film changes, light path is offset, THz wave is after the reflection of isosceles trapezoid glass prism bottom surface, be vertically injected to THz wave the second output from another short side of isosceles trapezoid glass prism bottom surface rectangle, at this moment, terahertz wave detector is surveyed the THz wave less than output.
Terahertz wave switch device of the present invention has compact conformation, and fast response time is easy to adjust, and cost of manufacture is low, satisfies the requirement of using in fields such as THz wave imaging, medical diagnosis, THz wave communication, THz wave space astronomys.
Description of drawings
Fig. 1 is the planar structure schematic diagram of terahertz wave switch device;
Fig. 2 is the perspective view of terahertz wave switch device;
Fig. 3 is the switch schematic diagram of terahertz wave switch device.
Embodiment
As shown in Figure 1, terahertz wave switch device is characterized in that comprising THz wave input 1, THz wave the first output 2, terahertz wave detector 3, THz wave the second output 4, isosceles trapezoid glass prism 5, magnetic field device 6, magnetic thin film 7, matrix 8; Be provided with the variable magnetic thin film of magnetic permeability 7 at matrix 8, matrix 8 and magnetic thin film 7 are cuboid, be provided with isosceles trapezoid glass prism 5 in the middle of on the variable magnetic thin film 7 of magnetic permeability, on the isosceles trapezoid glass prism 5, bottom surface is rectangle, it is parallel that variable magnetic thin film 7 cuboids of the long limit of the rectangle of isosceles trapezoid glass prism 5 bottom surfaces and magnetic permeability are grown the limit, both sides are provided with magnetic field device 6 on the variable magnetic thin film 7 of magnetic permeability, magnetic field device 6 is cuboid, the long limit of magnetic field device 6 cuboids is parallel with the rectangle minor face of isosceles trapezoid glass prism 5 bottom surfaces, be provided with THz wave first input end 1 in isosceles trapezoid glass prism 5 bottom surface rectangles one short side, be provided with THz wave the first output 2 and THz wave the second output 4 in isosceles trapezoid glass prism 5 another short sides of bottom surface rectangle, be provided with terahertz wave detector 3 in THz wave the first output 2 corresponding sections, THz wave is from 1 input of isosceles trapezoid glass prism 5 bottom surface rectangle THz wave inputs, enter isosceles trapezoid glass prism 5, after THz wave the first output 2 or 4 outputs of THz wave the second output, surveyed the THz wave of output by terahertz wave detector 3 after reflection.
Described matrix 1 material is Gd-Ga garnet, and described isosceles trapezoid glass prism 5 two trapezoidal base angles are 45 °, and the magnetic field intensity of described magnetic field device 6 is 20 oersteds, and the thickness of described magnetic thin film 7 is 10 μ m.
The THz wave method of switching is: when magnetic field device 6 during without externally-applied magnetic field, THz wave is from 1 input of THz wave input, impinge perpendicularly on isosceles trapezoid glass prism 5 bottom surfaces from isosceles trapezoid glass prism 5 bottom surface rectangles one short side, THz wave is after the reflection of isosceles trapezoid glass prism 5 bottom surfaces, be vertically injected to THz wave the first output 2 from isosceles trapezoid glass prism 5 another short sides of bottom surface rectangle, surveyed the THz wave of output by terahertz wave detector 3; When magnetic field device 6 has externally-applied magnetic field, the magnetic permeability of magnetic thin film 7 changes, light path is offset, THz wave is after the reflection of isosceles trapezoid glass prism 5 bottom surfaces, be vertically injected to THz wave the second output 4 from isosceles trapezoid glass prism 5 another short sides of bottom surface rectangle, at this moment, terahertz wave detector 3 is surveyed less than the THz wave of exporting.
Claims (4)
1. a terahertz wave switch device is characterized in that comprising THz wave first input end (1), THz wave the first output (2), terahertz wave detector (3), THz wave the second output (4), isosceles trapezoid glass prism (5), magnetic field device (6), magnetic thin film (7), matrix (8); Be provided with magnetic thin film (7) at matrix (8), matrix (8) and magnetic thin film (7) are cuboid, be provided with isosceles trapezoid glass prism (5) in the middle of magnetic thin film (7) is upper, on the isosceles trapezoid glass prism (5), bottom surface is rectangle, the long limit of the rectangle of isosceles trapezoid glass prism (5) bottom surface is parallel with the long limit of magnetic thin film (7) cuboid, the upper both sides of magnetic thin film (7) are provided with magnetic field device (6), magnetic field device (6) is cuboid, the long limit of magnetic field device (6) cuboid is parallel with the rectangle minor face of isosceles trapezoid glass prism (5) bottom surface, be provided with THz wave first input end (1) in isosceles trapezoid glass prism (5) bottom surface rectangle one short side, be provided with THz wave the first output (2) and THz wave the second output (4) in another short side of isosceles trapezoid glass prism (5) bottom surface rectangle, be provided with terahertz wave detector (3) in THz wave the first output (2) corresponding section, THz wave is from THz wave input (1) input of isosceles trapezoid glass prism (5) bottom surface rectangle one short side, enter isosceles trapezoid glass prism (5), after THz wave the first output (2) or THz wave the second output (4) output, surveyed the THz wave of output by terahertz wave detector (3) after reflection.
2. a kind of terahertz wave switch device as claimed in claim 1 is characterized in that two trapezoidal base angles of described isosceles trapezoid glass prism (5) equate, is 10 °～60 °.
3. a kind of terahertz wave switch device as claimed in claim 1, the thickness that it is characterized in that described magnetic thin film (7) is 5～50 μ m.
4. THz wave method of switching that use is installed as claimed in claim 1, it is characterized in that when magnetic field device (6) during without externally-applied magnetic field, THz wave is inputted from THz wave input (1), impinge perpendicularly on isosceles trapezoid glass prism (5) bottom surface from isosceles trapezoid glass prism (5) bottom surface rectangle one short side, THz wave is after the reflection of isosceles trapezoid glass prism (5) bottom surface, be vertically injected to THz wave the first output (2) from another short side of isosceles trapezoid glass prism (5) bottom surface rectangle, surveyed the THz wave of output by terahertz wave detector (3); When magnetic field device (6) when externally-applied magnetic field is arranged, the magnetic permeability of magnetic thin film (7) changes, light path is offset, THz wave is after the reflection of isosceles trapezoid glass prism (5) bottom surface, be vertically injected to THz wave the second output (4) from another short side of isosceles trapezoid glass prism (5) bottom surface rectangle, at this moment, terahertz wave detector (3) is surveyed the THz wave less than output.
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| CN 201010182535 CN101867073B (en) | 2010-05-25 | 2010-05-25 | Terahertz wave switch device and method thereof |
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| CN 201010182535 CN101867073B (en) | 2010-05-25 | 2010-05-25 | Terahertz wave switch device and method thereof |
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| CN101867073B true CN101867073B (en) | 2013-03-27 |
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| JP5709562B2 (en) * | 2010-03-04 | 2015-04-30 | キヤノン株式会社 | Terahertz wave generating element and terahertz time domain spectrometer |
| CN102944941B (en) * | 2012-11-12 | 2014-11-12 | 中国计量学院 | TeraHertz wave switch with multiple C-shaped grooves |
| CN111313130B (en) * | 2019-11-04 | 2021-03-26 | 华中科技大学 | Waveguide switch for switching transmission direction of high-power electron cyclotron wave |
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| CN101174719A (en) * | 2007-10-23 | 2008-05-07 | 中国计量学院 | Terahertz wave switch device and method thereof |
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