CN101866075A - Reflection-type TFT LCD and making method thereof - Google Patents
Reflection-type TFT LCD and making method thereof Download PDFInfo
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- CN101866075A CN101866075A CN201010164779.2A CN201010164779A CN101866075A CN 101866075 A CN101866075 A CN 101866075A CN 201010164779 A CN201010164779 A CN 201010164779A CN 101866075 A CN101866075 A CN 101866075A
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Abstract
The invention relates to a reflection-type TFT (Thin Film Transistor) LCD (liquid crystal display) and a making method thereof. A light absorption layer is arranged below a reflection surface, rays can enter the light absorption layer below the reflection surface through a light absorption gap and can be absorbed by the light absorption layer without irradiating the upper surface of a driving part to cause the failure of the driving part. Accordingly, the light absorption layer can substitute a black light-shielding layer in the prior art, and a black border region is formed between two adjacent pixels. The pixel electrodes or the reflection layer is extremely thin, and the pattern making thereof has extremely high accuracy so that the pattern of the black border region also has extremely high accuracy. Moreover, the black border region and the pixel electrodes are formed on the same substrate, the problem of pattern pasting contraposition errors among different substrates is inessential, and contraposition errors of different film layers of the same substrate are generally very small so that the black border region can be designed very narrow to acquire a larger pixel reflection display area and an effective reflection area ratio.
Description
Technical field
The present invention relates to a kind of LCD, relate in particular to reflection-type TFT LCD and manufacture method thereof.
Background technology
LCD has frivolous characteristics, but himself is not luminous, and needs dependence adds light source or surround lighting could be realized readable.The LCD of, mobile device portable for being applied in, its light source that adds is the much more battery electric quantity of consumption rate display itself often, cause its needs continually battery charge to be influenced its portability, thereby emphasize more in the portable equipment that at some it then is imperative using the reflection LCD that does not need to add light source.
For reflection LCD, It is generally accepted it is designed to normally white (NormalWhite) that can obtain higher brightness, structure and optical mode that it adopts are as follows:
As shown in Figure 1, a kind of existing reflection LCD comprises polaroid 01, upper substrate 02, common electrode layer 03, last oriented layer 04, liquid crystal layer 05, following oriented layer 06, pixel electrode layer 07, reflection horizon 08 and infrabasal plate 09, infrabasal plate 09, reflection horizon 08, pixel electrode layer 07, oriented layer 06, liquid crystal layer 05, upward oriented layer 04, common electrode layer 03, upper substrate 02 and the superimposed in regular turn setting of polaroid 01 down.Pixel electrode layer 07 comprises the pixel electrode that effective viewing area is all, the viewing area of a corresponding pixel of pixel electrode, and the aspect at all pixel electrode places is a pixel electrode layer 07.Polaroid 01 comprises one deck polarizing layer and one deck λ/4 phase shift films at least, light enters display interior from external irradiation, at first pass through polaroid, after being subjected to the modulation of polarization absorption and λ/4 phase shift films, form with circularly polarized light sees through upper substrate 02, common electrode layer 03, last oriented layer 04 also enters liquid crystal layer 05, after by liquid crystal layer 05 its polarization state being modulated, by following oriented layer 06, pixel electrode layer 07 arrives reflection horizon 08 and the layer 08 that is reflected reflects, again from top to bottom successively by above-mentioned rete and be subjected to liquid crystal layer 05, λ/4 phase shift films are modulated and the last outgoing of polarization absorption of polarizing layer once more.
Liquid crystal arrangement mode in the liquid crystal layer 05 can change by the electric field that the set electrode layer of its upper and lower surface (public electrode 03, pixel electrode 07) produces, when electric field is zero, liquid crystal molecule is a distorted-structure, by regulating its light path difference, be linearly polarized light in the time of can making polarized light reach reflection horizon 08, reflection back polarized condition is constant, and its polarization state is restored and can pass through polaroid 01 outgoing during once more by original rete, forms bright attitude demonstration.
When having certain electric field, liquid crystal molecule in the liquid crystal layer 05 is partial to homeotropic alignment, its modulating action to circularly polarized light is partially or completely weakened, with weakening situation fully is example: because polarization state is constant, still be circularly polarized light when light reaches reflection horizon 08, occur the phase differential of π after being subjected to reflecting, when arriving polarizing layer afterwards by original rete successively from top to bottom, its polarizing angle has rotated pi/2 and can not pass through polarizing layer, forms dark attitude and shows.
In general, the reflection LCD of high precision array need cooperate the active drive pattern that contains the TFT device, just may reach good display effect, as shown in Figure 2, left-hand component among the figure is the vertical view to infrabasal plate, and the right-hand component among the figure is the vertical view to upper substrate.Comprise a pixel electrode 016 in each pixel display area territory of the reflection LCD of this high precision array, effectively be provided with driver parts such as TFT device 010 (being thin film transistor (TFT)), data line 011, sweep trace 012, public capacitance line 013 outside the viewing area 014 (being reflector space); These driver part operated by rotary motion constitute the driver part layer at infrabasal plate, and each driver part all occupies certain elemental area.Because there is uncertain electric field in these driver part surfaces, can cause the liquid crystal molecule of its top uncertain arrangement to take place and produce uncontrollable bright attitude demonstration, make the contrast of display and display effect reduce; In addition, extraneous light shines on these driver parts, especially on the TFT device, also can cause its performance the normal demonstration of pixel to occur influencing unusually; Therefore, generally need one deck light shield layer 015 be set and cover, but this must cause the decline of pixel specular cross section than (being reflective display region territory area and elemental area ratio) in its relevant position of upper substrate.The decline of specular cross section ratio, the reduction that must cause whole pixel that extraneous light is utilized, because display can only utilize surround lighting to carry out work, this must reduce the readability of display.
In order to address the above problem, as shown in Figure 3, someone proposes the reflection LCD of another kind of high precision array, in its scheme, adopt the display structure of multilayer and the connected mode of via hole, realize that pixel electrode 026 (being reflector space) and driver part (are TFT device 020, data line 021, sweep trace 022, public capacitance line 023 driver part such as grade) area is overlapping to improve the specular cross section ratio, but for the zone between effective viewing area 024 of neighbor, still need to adopt light shield layer 025 to cover, because the general photoresist with big thickness (＞1 μ m) that adopts of light shield layer forms, its figure is difficult to reach the precision of other retes, and generally it is arranged on upper substrate, thereby also need to reserve certain area to prevent owing to the quilt that upper and lower base plate contraposition deviation causes is covered deflecting away from of zone, so the width of light shield layer still can not design too for a short time, make specular cross section than still lower and do not reach optimal display effect.
(Fig. 4 is the sectional view of Fig. 3 along A-A) as shown in Figure 3 and Figure 4, the reflection LCD of this existing high precision array comprise infrabasal plate 039, driver part layer 038, pixel electrode layer 037, time oriented layer 036, liquid crystal layer 035, last oriented layer 034, common electrode layer 033, chromatic filter layer 040, upper substrate 032 and the polaroid 031 of superimposed setting in regular turn; Also be provided with light shield layer 025 between effective viewing area of adjacent two pixels, light shield layer 025 is arranged on the pixel electrode layer 037, can be in same one deck with chromatic filter layer 040, and its position is corresponding with the slit between adjacent two pixel electrodes; Each driver part in the driver part layer 038 comprises TFT device 020, data line 021, sweep trace 022, public capacitance line 023, and sweep trace 022 is connected to the grid 042 of TFT device 020, the source electrode 043 that data line 021 is connected to TFT device 020; The extension and the public capacitance line 023 of the drain electrode 044 of TFT device 020 have overlapped storage capacitors 046; Pixel electrode layer 037 is electrically connected to the extension of the drain electrode 044 of TFT device 020 by via hole 045.
According to the reflection LCD of above-mentioned this existing high precision array as shown in Figure 3 and Figure 4, with 2.0 " QVGA achromaticity display be designed to example, its pixel size is 127.5 * 127.5 μ m
2, according to existing technology, the aligning accuracy of supposing upper and lower base plate is 5 μ m, the pattern precision of light shield layer is 3 μ m, the minimum spacing of pixel electrode is that 3 μ m, precision are 1 μ m, and it is 20 μ m that the width of its light shield layer needs at least, thereby effectively the viewing area is 107.5 * 107.5 μ m
2, the specular cross section ratio has only 71%.If the situation of colored designs because its each pixel is divided into three sub-pixels, also needs to design light shield layer between its sub-pixel,, have only 45% so its specular cross section is lower than then.
Summary of the invention
Technical matters to be solved by this invention provides the manufacture method of a kind of reflection-type TFT LCD and this display, and the pixel of this reflection-type TFT LCD has bigger reflective display region territory area and specular cross section ratio.The technical scheme that adopts is as follows:
A kind of reflection-type TFT LCD, comprise infrabasal plate, driver part layer, liquid crystal layer and upper substrate, the driver part layer is arranged on the upper surface of infrabasal plate, liquid crystal layer is arranged between driver part layer and the upper substrate, has a reflecting surface between liquid crystal layer and the driver part layer, it is characterized in that: comprise that also light-absorption layer, light-absorption layer are arranged between driver part layer and the reflecting surface.
The driver part layer comprises driver parts such as TFT device (being thin film transistor (TFT)), sweep trace, data line, public capacitance line, generally adopts sandwich construction; Grid, the data line that sweep trace is connected to the TFT device is connected to the source electrode of TFT device; The extension of the drain electrode of TFT device and public capacitance line overlap have constituted storage capacitors; Pixel electrode layer is electrically connected to the extension of the drain electrode of TFT by via hole.
Light-absorption layer generally adopts the black insulating material to make, and certain thickness is arranged, and preferred light-absorption layer adopts black photosensitive resin to form in the spin coating of driver part layer upper surface, and it can form required figure by the method for exposure imaging; More preferably the black photosensitive resin is the negative photosensitive resin, it is characterized by solidification to take place after being exposed, so when being subjected to the irradiation of extraneous light in the use afterwards, decomposition can not appear in its material itself, has higher reliability.
Generally, reflection-type TFT LCD also comprises pixel electrode layer, following oriented layer, goes up oriented layer, common electrode layer and polaroid, and pixel electrode layer is arranged on the light-absorption layer with following oriented layer is superimposed in regular turn.Like this, reflecting surface can be made of (being the one side that pixel electrode layer up and down oriented layer has a common boundary) the upper surface of pixel electrode layer, and at this moment, the material of pixel electrode layer should be the high metal material of reflectivity; Also can be between light-absorption layer and pixel electrode layer, to establish the reflection horizon in addition, the upper surface in reflection horizon constitutes reflecting surface, at this moment, also should be provided with one deck optical medium layer between reflection horizon and the pixel electrode layer, and pixel electrode layer adopts transparent conductive material, forms as indium tin oxide (ITO); Two kinds of set-up modes of above-mentioned reflecting surface all are belows that light-absorption layer is in reflecting surface.
Pixel electrode layer comprises the pixel electrode that effective viewing area is all, the viewing area of a corresponding pixel of pixel electrode, and the aspect at all pixel electrode places is a pixel electrode layer, between adjacent two pixel electrodes slit is arranged.And establish the situation in reflection horizon for other, the reflection horizon should be made of the reflex block that is complementary with pixel electrode, also has the slit between adjacent two reflex blocks.
Slit between adjacent two pixel electrodes or the slit between adjacent two reflex blocks (being the slit between adjacent two reflectings surface) constitute the extinction slit, light can see through the light-absorption layer that the extinction slit enter into the below of reflecting surface, is absorbed by light-absorption layer and can not shine and cause the driver part cisco unity malfunction above the driver part layer.Because the effect of light-absorption layer, light is all absorbed, and does not have light to reflect from the extinction slit, so the extinction slit forms the black border region between the neighbor.This shows, light-absorption layer can replace the black light shield layer of prior art, and between adjacent two pixels, form a black border region, because black border region is defined by the extinction slit, the extinction slit then is made of between adjacent two pixel electrodes or the slit between adjacent two reflex blocks (being the slit between adjacent two reflectings surface), and because pixel electrode or reflection horizon (＜0.3 μ m) as thin as a wafer, its graphic making all has high precision (＜3 μ m), that is to say that the pattern of black border region also has high precision.And because black border region and pixel electrode are all gone up formation at same substrate (being infrabasal plate), need not consider the applying bit errors problem between different substrate between its figure, and the bit errors of the different retes of same substrate is generally all smaller, thereby black border region can be designed very narrow, thereby bigger pixel reflects viewing area area and specular cross section ratio have been obtained.
In one embodiment, this reflection-type TFT LCD also comprises pixel electrode layer, following oriented layer, goes up oriented layer, common electrode layer and polaroid, infrabasal plate, driver part layer, light-absorption layer, pixel electrode layer, oriented layer, liquid crystal layer, upward oriented layer, common electrode layer, upper substrate and the superimposed in regular turn setting of polaroid down, the upper surface of pixel electrode layer constitutes reflecting surface.Pixel electrode layer is electrically connected to the extension of the drain electrode of TFT by via hole, and via hole is arranged on the light-absorption layer.The material of preferred pixel electrode layer is the high metal material of reflectivity, and other each layer on the pixel electrode layer is generally transparent material, thereby is reflected back when making light reach the pixel electrode layer upper surface; Pixel electrode layer is both as pixel electrode, and its surface is again as reflecting surface.Because pixel electrode layer adopts the high metal material of reflectivity, thereby the interface of pixel electrode layer and following oriented layer forms reflecting surface, like this, slit between adjacent two pixel electrodes (being the slit between adjacent two reflectings surface) constitutes the extinction slit, and light can see through the below that the extinction slit enters into reflecting surface.And light-absorption layer (being about to the below that light-absorption layer is arranged on reflecting surface) is set between driver part layer and pixel electrode layer, light enters light-absorption layer after seeing through the extinction slit, absorbed and can not shine by light-absorption layer and cause the driver part cisco unity malfunction above the driver part layer, thereby avoided driver part to influence the normal demonstration of pixel.
For reaching the purpose that produces diffuse effect, as the further preferred version of the present invention, it is characterized in that: the surface of described light-absorption layer is rough shape, is in that pixel electrode layer on the light-absorption layer is corresponding to be rough shape.Surface by light-absorption layer is set to rough shape, make the pixel electrode layer that is on the light-absorption layer be rough shape equally, thereby make reflecting surface also be rough shape, diffuse reflection takes place in incident ray on reflecting surface, more help obtaining on the viewing area comparatively uniform image of brightness.Under the situation of upper surface as reflecting surface of pixel electrode layer, general the setting again at the upper surface of pixel electrode layer filled and led up layer, promptly the uneven of upper surface of pixel electrode layer do not filled and led up, because the formed electric field of pixel electrode layer and common electrode layer can weaken owing to the existence of filling and leading up layer.
In another embodiment, this reflection-type TFT LCD comprises reflection horizon, optical medium layer, pixel electrode layer, following oriented layer, goes up oriented layer, common electrode layer and polaroid, infrabasal plate, driver part layer, light-absorption layer, reflection horizon, optical medium layer, pixel electrode layer, oriented layer, liquid crystal layer, upward oriented layer, common electrode layer, upper substrate and the superimposed in regular turn setting of polaroid down, pixel electrode layer covers the reflection horizon, and the upper surface in reflection horizon constitutes reflecting surface.Pixel electrode layer is electrically connected to the extension of the drain electrode of TFT by via hole, the opening that via hole is arranged on light-absorption layer, the optical medium layer and passes on the reflection horizon to be reserved.Because between adjacent two pixel electrode layers slit must be arranged, and pixel electrode layer has covered the reflection horizon, so the slit also must be arranged between adjacent two reflection horizon, at this moment, the scope of black border region is determined by the slit between the reflection horizon.Pixel electrode layer covers the reflection horizon, can be that pixel electrode layer just covers the reflection horizon, also can be the area of the area of pixel electrode layer greater than the reflection horizon, and the slit between adjacent two pixel electrodes is dropped within the scope in the slit between the adjacent reflection horizon.Can guarantee that so imperfect demonstration light that the unstable electric field in slit causes between the pixel electrode unstable liquid crystal arrangement causes enters light-absorption layer fully and is absorbed, can not be reflected out and influence display effect, nor can influence the work of driver part.The general resin material that adopts of optical medium layer forms.
For reaching the purpose that produces diffuse effect, as the further preferred version of the present invention, it is characterized in that: the surface of described light-absorption layer is rough shape, is in that the reflection horizon of light-absorption layer upper surface is corresponding to be rough shape.Surface by light-absorption layer is set to rough shape, make the upper surface that is coated in the lip-deep reflection horizon of light-absorption layer be rough shape equally, thereby make reflecting surface also be rough shape, diffuse reflection takes place in incident ray on reflecting surface, more help obtaining on the viewing area comparatively uniform image of brightness.
Be set to be under the situation of rough shape on the surface of light-absorption layer, can adopt the optical medium layer that rough surface, reflection horizon is filled and led up, make the thickness of liquid crystal layer not be subjected to rough influence, thereby have better optical path difference controllability, and have better display effect.
For reaching the purpose that realizes colour display functions, as the present invention's preferred version further, described optical medium layer is the chromatic filter layer with colorized optical filtering effect, and chromatic filter layer covers the reflection horizon.Can be that chromatic filter layer just covers the reflection horizon, also can be the area of the area of chromatic filter layer greater than the reflection horizon, and the slit between adjacent two chromatic filter layers is dropped within the scope in the slit between the adjacent reflection horizon.Chromatic filter layer has covered the reflection horizon, makes reflector space all play the demonstration effect, thereby has guaranteed to still have after the reflection horizon is set maximum effective viewing area.By filter layer is set, makes display of the present invention can be applied to colored reflection and show.
The present invention is by being provided with light-absorption layer below reflecting surface, light can see through the light-absorption layer that the extinction slit enter into the below of reflecting surface, is absorbed by light-absorption layer and can not shine and cause the driver part cisco unity malfunction above the driver part layer.This shows, light-absorption layer can replace the black light shield layer of prior art, and between adjacent two pixels, form a black border region, because pixel electrode or reflection horizon be (＜0.3 μ m) as thin as a wafer, its graphic making all has high precision (＜3 μ m), therefore, the pattern of black border region also has high precision.And because black border region and pixel electrode are all gone up formation at same substrate (being infrabasal plate), need not consider the applying bit errors problem between different substrate between its figure, and the bit errors of the different retes of same substrate is generally all smaller, thereby black border region can be designed very narrow, thereby bigger pixel reflects viewing area area and specular cross section ratio have been obtained.
A kind of manufacture method as above-mentioned reflection-type TFT LCD is characterized in that comprising the steps:
Step 1, the driver part layer is set on infrabasal plate.
On infrabasal plate, form a plurality of driver parts by existing tft array technology, comprise and form TFT device, sweep trace, data line, public capacitance line, grid, the data line that sweep trace is connected to the TFT device is connected to the source electrode of TFT device, and the extension of the drain electrode of TFT device and public capacitance line overlap have constituted storage capacitors.
Can adopt existing technological means to form driver part; a kind of specific practice that forms driver part is: grid and public capacitance line at first are set on infrabasal plate; then at grid and the superimposed in regular turn insulation course that is provided with of public capacitance line upper surface; active layer and channel protective layer; on the channel protective layer of grid position, carve the disconnected channel protection film that forms; then above channel protection film, form ohmic contact layer and metal level more successively; carve disconnected by relevant position then to the metal level of grid and public capacitance line position; form source electrode; the extension of drain electrode and drain electrode; then carve the ohmic contact layer of disconnected channel protection film position again; source electrode is connected with drain electrode by ohmic contact layer; last two ends along source electrode and drain extension; except that insulation course; all carve and break, form driver part.
For guaranteeing display reliability of applying under luminous environment, preferred black photosensitive resin is the negative photosensitive resin, it is characterized by to be exposed solidification takes place afterwards.
Step 3, on light-absorption layer, adopt sputtering method pixel deposition electrode layer, and adopt the mask lithography technology its graphical pixel electrode that forms, pixel electrode is electrically connected corresponding drain electrode by the light-absorption layer via hole.
Light-absorption layer has under the situation of rough shape in the described reflection-type TFT LCD on preferred, the feature of the manufacture method of this reflection-type TFT LCD is: the exposure method that adopts in step 2 is the gray scale exposure method, so that the surface of light-absorption layer is rough shape.
The characteristics of gray scale exposure method are: the exposure of diverse location presents predetermined grey level, thereby different gray scales can form via hole (exposure is minimum), recess, protruding place (exposure is the highest).The surface of light-absorption layer is made as is rough shape, make the pixel electrode layer that is on the light-absorption layer be corresponding rough shape, thereby make reflecting surface also be rough shape, diffuse reflection takes place in incident ray on reflecting surface, more help obtaining on the viewing area comparatively uniform image of brightness.
Another kind of manufacture method as above-mentioned reflection-type TFT LCD is characterized in that comprising the steps:
Step 1, the driver part layer is set on infrabasal plate.
On infrabasal plate, form a plurality of driver parts by existing tft array technology, comprise and form TFT device, sweep trace, data line, public capacitance line, grid, the data line that sweep trace is connected to the TFT device is connected to the source electrode of TFT device, and the extension of the drain electrode of TFT device and public capacitance line overlap have constituted storage capacitors.
Can adopt existing technological means to form driver part; a kind of specific practice that forms driver part is: grid and public capacitance line at first are set on infrabasal plate; then at grid and the superimposed in regular turn insulation course that is provided with of public capacitance line upper surface; active layer and channel protective layer; on the channel protective layer of grid position, carve the disconnected channel protection film that forms; then above channel protection film, form ohmic contact layer and metal level more successively; carve disconnected by relevant position then to the metal level of grid and public capacitance line position; form source electrode; the extension of drain electrode and drain electrode; then carve the ohmic contact layer of disconnected channel protection film position again; source electrode is connected with drain electrode by ohmic contact layer; last two ends along source electrode and drain extension; except that insulation course; all carve and break, form driver part.
Step 3, on light-absorption layer, adopt sputtering method deposition of reflective layer, and adopt the mask lithography technology its graphical opening that forms on reflex block and the reflection horizon.
Light-absorption layer has under the situation of rough shape in the described reflection-type TFT LCD on preferred, the feature of the manufacture method of this reflection-type TFT LCD is: the exposure method that adopts in step 2 is the gray scale exposure method, so that the surface of light-absorption layer is rough shape.
The characteristics of gray scale exposure method are: the exposure of diverse location presents predetermined grey level, thereby different gray scales can form via hole (exposure is minimum), recess, protruding place (exposure is the highest).The surface of light-absorption layer is made as is rough shape, make the reflection horizon that is on the light-absorption layer be corresponding rough shape, thereby make reflecting surface also be rough shape, diffuse reflection takes place in incident ray on reflecting surface, more help obtaining on the viewing area comparatively uniform image of brightness.
For reaching the purpose that realizes colour display functions, as the present invention's preferred version further, it is characterized in that: in above-mentioned steps four, the specific practice that the optical medium layer is set is: the negative light-sensitive color resin of choosing the 1st kind of color, be coated on the reflection horizon, and exposure imaging forms the extension of first chromatic filter layer and via hole; Choose the negative light-sensitive color resin of the 2nd kind of color, be coated on the reflection horizon, and exposure imaging forms the extension of second chromatic filter layer and via hole; Choose the negative light-sensitive color resin of the 3rd kind of color, be coated on the reflection horizon, and exposure imaging forms the extension of the 3rd chromatic filter layer and via hole; The optical medium layer that forms is a chromatic filter layer, and chromatic filter layer covers the reflection horizon.
Description of drawings
The structural representation of a kind of existing reflection LCD of Fig. 1.
The schematic layout pattern of the 2nd kind of existing reflection LCD of Fig. 2 has wherein adopted light shield layer.
Fig. 3 is the schematic layout pattern of the 3rd kind of reflection LCD that has, and has wherein adopted light shield layer, and adopts the display structure of multilayer and the connected mode of via hole.
Fig. 4 is the A-A sectional view of Fig. 3.
Fig. 5 is the schematic layout pattern of the 1st kind of embodiment of the present invention on infrabasal plate.
Fig. 6 is the synoptic diagram that constitutes the extinction slit between the 1st kind of embodiment pixel electrode of the present invention.
Fig. 7 is the B-B sectional view of Fig. 5, is the layer structure synoptic diagram of the 1st kind of embodiment of the present invention.
Fig. 8 A-Fig. 8 K is the synoptic diagram of the 1st kind of embodiment manufacture process of the present invention.
Fig. 9 is the schematic layout pattern of the 2nd kind of embodiment of the present invention on infrabasal plate.
Figure 10 is the C-C sectional view of Fig. 9, is the layer structure synoptic diagram of the 2nd kind of embodiment of the present invention.
Figure 11 G-Figure 11 N is the synoptic diagram of the 2nd kind of embodiment manufacture process of the present invention.
Figure 12 is the structural representation of the 3rd kind of embodiment of the present invention, and the surface of light-absorption layer is rough shape among the figure, and the reflection horizon is corresponding rough shape, and adopts chromatic filter layer that the rough upper surface in reflection horizon is filled and led up.
Embodiment
Be described further below in conjunction with accompanying drawing and preferred implementation of the present invention.
The 1st kind of embodiment: the upper surface of pixel electrode is set to reflecting surface.
As shown in Figure 7, the reflection-type TFT LCD of the 1st kind of embodiment comprises infrabasal plate 10, driver part layer 9, light-absorption layer 8, pixel electrode layer 7, time oriented layer 6, liquid crystal layer 5, last oriented layer 4, common electrode layer 3, upper substrate 2 and the polaroid 1 of superimposed setting in regular turn, and the upper surface of pixel electrode layer 7 constitutes reflecting surface.Slit between adjacent two pixel electrodes 11 (being the slit between adjacent two reflectings surface) constitutes extinction slit 13, and extinction slit 13 is owing to the black border region that does not have light to reflect to constitute between adjacent two pixels.
The layout of reflection-type TFT LCD on infrabasal plate 10 of the 1st kind of embodiment comprises pixel electrode 11 and the driver part layout on infrabasal plate 10 as shown in Figure 5.
The slit that adjacent two pixel electrodes are 11 constitutes extinction slit 13 as shown in Figure 6.
The manufacture method of the reflection-type TFT LCD of the 1st kind of embodiment is as follows:
Step 1, on infrabasal plate 10, form driver part layer 9.
On infrabasal plate 10, form a plurality of driver parts by existing tft array technology, comprise and form TFT device, sweep trace, data line, public capacitance line, grid, the data line that sweep trace is connected to the TFT device is connected to the source electrode of TFT device, and the extension of the drain electrode of TFT device and public capacitance line overlap have constituted storage capacitors.
The specific practice that forms driver part is: shown in Fig. 8 A; grid 911 and public capacitance line 94 at first are set on infrabasal plate 10; then as Fig. 8 grid that B is shown in 911 and the superimposed in regular turn insulation course 14 that is provided with of public capacitance line 94 upper surfaces; active layer 15 and channel protective layer 16; going up of channel protective layer 16 as Fig. 8 grid that C is shown in 911 positions carved the disconnected channel protection film 17 that forms; the top of following as Fig. 8 channel protection film that D is shown in 17 forms ohmic contact layer 18 and metal level 19 successively again; shown in Fig. 8 E, carve disconnected then by relevant position to the metal level 19 of grid 911 and public capacitance line 94 positions; form source electrode 912; the extension 914 of drain electrode 913 and drain electrode; carve the ohmic contact layer 18 of disconnected channel protection film 17 positions shown in following again; source electrode 912 is connected with drain electrode 913 by ohmic contact layer 18; last as the two ends of Fig. 8 F along source electrode 912 and drain extension 914; except that insulation course 14; all carve and break, form driver part.
Step 3, shown in Fig. 8 I, on light-absorption layer 8, adopt sputtering method pixel deposition electrode layer 7, and adopt the mask lithography technology its graphical pixel electrode 11 that forms, pixel electrode 11 is electrically connected to the drain electrode 913 of TFT device 91 by the via hole 20 of light-absorption layer 8, shown in Fig. 8 J.
According to the structure of present embodiment, the black border region width between the neighbor can be designed as the minimum line spacing of pixel electrode layer pattern, with 2.0 " QVGA achromaticity display be designed to example, pixel size is 127.5 * 127.5 μ m
2, according to existing technology, the minimum spacing of pixel electrode can reach 3 μ m, thereby effectively the viewing area is 124.5 * 124.5 μ m
2, the specular cross section ratio reaches 95%.
The 2nd kind of embodiment: the reflection horizon is set in addition and realizes colour display functions.
As shown in figure 10, the reflection-type TFT LCD of the 2nd kind of embodiment comprises infrabasal plate 32, driver part layer 31, light-absorption layer 30, reflection horizon 29, chromatic filter layer 28, pixel electrode layer 27, time oriented layer 26, liquid crystal layer 25, last oriented layer 24, common electrode layer 23, upper substrate 22 and the polaroid 21 of superimposed setting in regular turn, chromatic filter layer 28 covers reflection horizon 29, and the upper surface in reflection horizon 29 constitutes reflecting surface.
The layout of reflection-type TFT LCD on infrabasal plate 32 of the 2nd kind of embodiment comprises pixel electrode 33, reflection horizon 29, chromatic filter layer 28 and the layout of driver part on infrabasal plate 32 as shown in Figure 9.
The manufacture method of the reflection-type TFT LCD of the 2nd kind of embodiment is as follows:
Step 1, driver part layer 31 is set on infrabasal plate 32 by existing tft array technology.
Promptly be on infrabasal plate 32, to form a plurality of driver parts, comprise and form TFT device, sweep trace, data line, public capacitance line, grid, the data line that sweep trace is connected to the TFT device is connected to the source electrode of TFT device, and the extension of the drain electrode of TFT device and public capacitance line overlap have constituted storage capacitors.
The specific practice of formation driver part is identical with the way among the 1st kind of embodiment, after driver part layer 31 is finished in setting, forms the layer structure shown in Figure 11 G.
Step 3, shown in Figure 11 J, on light-absorption layer 30, adopt sputtering method deposition of reflective layer 29, and adopt the mask lithography technology its graphical opening that forms on reflex block and the reflection horizon 29.
The specific practice that chromatic filter layer 28 is set is: choose the negative light-sensitive color resin of first kind of color, be coated on the reflection horizon 29, and exposure imaging forms the extension of first chromatic filter layer 281 and via hole; Choose the negative light-sensitive color resin of second kind of color, be coated on the reflection horizon 29, and exposure imaging forms the extension of second chromatic filter layer 282 and via hole; Choose the negative light-sensitive color resin of the third color, be coated on the reflection horizon 29, and exposure imaging forms the extension of the 3rd chromatic filter layer 283 and via hole.
According to the design of present embodiment, with 2.0 " the QVGA color monitor be designed to example, its include monochrome pixels size is 127.5 * 42.5 μ m
2According to existing technology, suppose that chromatic filter layer and pixel electrode all are is that benchmark carries out contraposition with the reflection horizon, and aligning accuracy is 1 μ m, chromatic filter layer border precision 3 μ m between the different colours, the minimum spacing 3 μ m of pixel electrode, precision 1 μ m, thereby to need the slit between the design reflectivity layer be 4 μ m, and effectively the viewing area is 123.5 * 38.5 μ m
2, its specular cross section ratio is 88%.
The 3rd kind of embodiment: on the basis of realizing colour display functions, produce diffuse effect, the surface of light-absorption layer is rough shape, the reflection horizon is corresponding rough shape, and adopts chromatic filter layer that the rough upper surface in reflection horizon is filled and led up.
As shown in figure 12, the reflection-type TFT LCD of the 3rd kind of embodiment reflection-type TFT LCD with the 2nd kind of embodiment on general structure is identical, its difference is: the surface of the light-absorption layer 30 of the reflection-type TFT LCD of the 3rd kind of embodiment is rough shape, be in that the reflection horizon 29 of light-absorption layer 30 upper surfaces is corresponding to be rough shape, and adopt 28 pairs of reflection horizon of chromatic filter layer, 29 rough upper surfaces to fill and lead up.
The manufacture method of the reflection-type TFT LCD of the 3rd kind of embodiment is as follows:
Preferred above-mentioned black photosensitive resin is the negative photosensitive resin, after it is characterized in that being exposed solidification takes place, and has guaranteed display reliability of applying under luminous environment.
Plain electrode layer among preferred the 1st kind of embodiment adopts the metallic aluminium deposition to form.
In other embodiment of the 1st kind of embodiment, the surface of light-absorption layer is rough shape, is in that the upper surface of pixel electrode layer of light-absorption layer upper surface is corresponding to be rough shape.Its manufacture method is: on the basis of the 1st kind of embodiment, adopt the gray scale exposure technique that light-absorption layer is carried out exposure imaging, make the upper surface of light-absorption layer be rough shape, and when adopting sputtering method pixel deposition electrode layer, make pixel electrode layer be corresponding rough shape.
Claims (10)
1. reflection-type TFT LCD, comprise infrabasal plate, driver part layer, liquid crystal layer and upper substrate, the driver part layer is arranged on the upper surface of infrabasal plate, liquid crystal layer is arranged between driver part layer and the upper substrate, has a reflecting surface between liquid crystal layer and the driver part layer, it is characterized in that: comprise that also light-absorption layer, light-absorption layer are arranged between driver part layer and the reflecting surface.
2. reflection-type TFT LCD as claimed in claim 1, it is characterized in that: also comprise pixel electrode layer, following oriented layer, go up oriented layer, common electrode layer and polaroid, infrabasal plate, driver part layer, light-absorption layer, pixel electrode layer, oriented layer, liquid crystal layer, upward oriented layer, common electrode layer, upper substrate and the superimposed in regular turn setting of polaroid down, the upper surface of pixel electrode layer constitutes reflecting surface.
3. reflection-type TFT LCD as claimed in claim 2 is characterized in that: the surface of described light-absorption layer is rough shape, is in that pixel electrode layer on the light-absorption layer is corresponding to be rough shape.
4. reflection-type TFT LCD as claimed in claim 1, its feature: also comprise reflection horizon, optical medium layer, pixel electrode layer, following oriented layer, go up oriented layer, common electrode layer and polaroid, infrabasal plate, driver part layer, light-absorption layer, reflection horizon, optical medium layer, pixel electrode layer, oriented layer, liquid crystal layer, upward oriented layer, common electrode layer, upper substrate and the superimposed in regular turn setting of polaroid down, pixel electrode layer covers the reflection horizon, and the upper surface in reflection horizon constitutes reflecting surface.
5. reflection-type TFT LCD as claimed in claim 4, its feature: the surface of described light-absorption layer is rough shape, is in that the reflection horizon of light-absorption layer upper surface is corresponding to be rough shape.
6. as claim 4 or 5 described reflection-type TFT LCDs, its feature: described optical medium layer is the chromatic filter layer with colorized optical filtering effect, and chromatic filter layer covers the reflection horizon.
7. the manufacture method of a reflection-type TFT LCD is characterized in that comprising the steps:
Step 1, the driver part layer is set on infrabasal plate;
Step 2, the spin coating on the driver part layer of employing black photosensitive resin form light-absorption layer, and carry out exposure imaging by exposure imaging technology, and the light-absorption layer in the drain extension position forms via hole;
Step 3, on light-absorption layer, adopt sputtering method pixel deposition electrode layer, and adopt the mask lithography technology its graphical pixel electrode that forms, pixel electrode is electrically connected corresponding drain electrode by the light-absorption layer via hole;
Step 4, on pixel electrode layer superimposed in regular turn be provided with down oriented layer, liquid crystal layer, on oriented layer, common electrode layer, upper substrate and polaroid.
8. the manufacture method of a reflection-type TFT LCD is characterized in that comprising the steps:
Step 1, the driver part layer is set on infrabasal plate by existing tft array technology;
Step 2, adopt the spin coating on the driver part layer of black photosensitive resin to form light-absorption layer, and the light-absorption layer of drain extension position is carried out exposure imaging, form via hole by exposure imaging technology;
Step 3, on light-absorption layer, adopt sputtering method deposition of reflective layer, and adopt the mask lithography technology its graphical opening that forms on reflex block and the reflection horizon;
Step 4, the mode that adopts photosensitive resin to be coated with are provided with the optical medium layer on the reflection horizon, and adopt the via hole on the exposure imaging technology formation optical medium layer;
Step 5, on the optical medium layer, adopt sputtering method pixel deposition electrode layer, and adopt the mask lithography technology its graphical pixel electrode that forms, pixel electrode is electrically connected corresponding drain electrode by the via hole of light-absorption layer and optical medium layer;
Step 6, on pixel electrode layer superimposed in regular turn be provided with down oriented layer, liquid crystal layer, on oriented layer, common electrode layer, upper substrate and polaroid.
9. as the manufacture method of reflection-type TFT LCD as described in the claim 8, it is characterized in that: the exposure method that adopts in step 2 is the gray scale exposure method, makes the surface of light-absorption layer be rough shape.
10. as the manufacture method of reflection-type TFT LCD as described in claim 8 or 9, it is characterized in that: in step 4, the specific practice that the optical medium layer is set is: the negative light-sensitive color resin of choosing first kind of color, be coated on the reflection horizon, and exposure imaging forms the extension of first chromatic filter layer and via hole; Choose the negative light-sensitive color resin of second kind of color, be coated on the reflection horizon, and exposure imaging forms the extension of second chromatic filter layer and via hole; Choose the negative light-sensitive color resin of the third color, be coated on the reflection horizon, and exposure imaging forms the extension of the 3rd chromatic filter layer and via hole; The optical medium layer that forms is a chromatic filter layer, and chromatic filter layer covers the reflection horizon.
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102707349A (en) * | 2012-03-31 | 2012-10-03 | 深圳市华星光电技术有限公司 | Manufacturing method of reflection layer of reflection type liquid crystal display |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001183638A (en) * | 1999-12-22 | 2001-07-06 | Nec Corp | Reflective liquid crystal display device |
| US20020109660A1 (en) * | 1997-02-06 | 2002-08-15 | Semiconductor Energy Laboratory Co., Ltd., A Japan Corporation | Reflection type display device and electronic device |
| US20040119901A1 (en) * | 2002-12-20 | 2004-06-24 | Won-Seok Kang | Reflective liquid crystal display device and fabricating method thereof |
| JP2005300788A (en) * | 2004-04-09 | 2005-10-27 | Sony Corp | Liquid crystal display device and method for manufacturing same |
-
2010
- 2010-04-30 CN CN201010164779.2A patent/CN101866075A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020109660A1 (en) * | 1997-02-06 | 2002-08-15 | Semiconductor Energy Laboratory Co., Ltd., A Japan Corporation | Reflection type display device and electronic device |
| JP2001183638A (en) * | 1999-12-22 | 2001-07-06 | Nec Corp | Reflective liquid crystal display device |
| US20040119901A1 (en) * | 2002-12-20 | 2004-06-24 | Won-Seok Kang | Reflective liquid crystal display device and fabricating method thereof |
| JP2005300788A (en) * | 2004-04-09 | 2005-10-27 | Sony Corp | Liquid crystal display device and method for manufacturing same |
Cited By (21)
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|---|---|---|---|---|
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| CN103258756A (en) * | 2013-04-26 | 2013-08-21 | 京东方科技集团股份有限公司 | Stripping capacity evaluation method and stripping capacity evaluation system for stripping equipment |
| WO2014173008A1 (en) * | 2013-04-26 | 2014-10-30 | 京东方科技集团股份有限公司 | Method and system for evaluating stripping capability of stripping device and evaluation member |
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| CN105589249B (en) * | 2014-11-10 | 2018-10-16 | 株式会社日本显示器 | Reflection display device |
| CN105589249A (en) * | 2014-11-10 | 2016-05-18 | 株式会社日本显示器 | Reflective type display device |
| US10571746B2 (en) | 2014-12-04 | 2020-02-25 | Japan Display Inc. | Display device |
| CN105676555A (en) * | 2014-12-04 | 2016-06-15 | 株式会社日本显示器 | Display device |
| US10317731B2 (en) | 2014-12-04 | 2019-06-11 | Japan Display Inc. | Display device |
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| US10367128B2 (en) | 2017-03-31 | 2019-07-30 | Shenzhen China Star Optoelectronics Technology Co., Ltd | Pixel structure and method for the fabrication thereof |
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| US11088224B2 (en) | 2018-07-16 | 2021-08-10 | Chengdu Boe Optoelectronics Technology Co., Ltd. | Display substrate, method for manufacturing the same and display device |
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