CN101853833B - 埋入型基岛及多凸点基岛引线框结构及其先刻后镀方法 - Google Patents
埋入型基岛及多凸点基岛引线框结构及其先刻后镀方法 Download PDFInfo
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- CN101853833B CN101853833B CN2010101636497A CN201010163649A CN101853833B CN 101853833 B CN101853833 B CN 101853833B CN 2010101636497 A CN2010101636497 A CN 2010101636497A CN 201010163649 A CN201010163649 A CN 201010163649A CN 101853833 B CN101853833 B CN 101853833B
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- pin
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- metal substrate
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- basic island
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- 238000000034 method Methods 0.000 title claims abstract description 13
- 238000007747 plating Methods 0.000 title claims abstract description 9
- 238000005530 etching Methods 0.000 title abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims abstract description 113
- 239000002184 metal Substances 0.000 claims abstract description 113
- 239000000758 substrate Substances 0.000 claims description 75
- 229920002120 photoresistant polymer Polymers 0.000 claims description 41
- 239000005022 packaging material Substances 0.000 claims description 17
- 239000000945 filler Substances 0.000 claims description 14
- 238000003384 imaging method Methods 0.000 claims description 12
- 238000005253 cladding Methods 0.000 claims description 4
- -1 Step 4 Substances 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 claims 1
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 150000001875 compounds Chemical class 0.000 abstract 1
- 238000000465 moulding Methods 0.000 abstract 1
- 238000007789 sealing Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 238000011112 process operation Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000021615 conjugation Effects 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000008642 heat stress Effects 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010101636497A CN101853833B (zh) | 2010-04-28 | 2010-04-28 | 埋入型基岛及多凸点基岛引线框结构及其先刻后镀方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010101636497A CN101853833B (zh) | 2010-04-28 | 2010-04-28 | 埋入型基岛及多凸点基岛引线框结构及其先刻后镀方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101853833A CN101853833A (zh) | 2010-10-06 |
CN101853833B true CN101853833B (zh) | 2011-10-05 |
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CN2010101636497A Active CN101853833B (zh) | 2010-04-28 | 2010-04-28 | 埋入型基岛及多凸点基岛引线框结构及其先刻后镀方法 |
Country Status (1)
Country | Link |
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CN (1) | CN101853833B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103681583B (zh) * | 2013-12-05 | 2016-04-27 | 江苏长电科技股份有限公司 | 一次先蚀后镀金属框减法埋芯片正装平脚结构及工艺方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101236947A (zh) * | 2008-01-25 | 2008-08-06 | 苏州固锝电子股份有限公司 | 一种新型封装结构的半导体器件 |
-
2010
- 2010-04-28 CN CN2010101636497A patent/CN101853833B/zh active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101236947A (zh) * | 2008-01-25 | 2008-08-06 | 苏州固锝电子股份有限公司 | 一种新型封装结构的半导体器件 |
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Publication number | Publication date |
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CN101853833A (zh) | 2010-10-06 |
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Effective date of registration: 20170111 Address after: Tianjin free trade zone (Dongjiang Bonded Port) No. 6865 North Road, 1-1-1802-7 financial and trade center of Asia Patentee after: Xin Xin finance leasing (Tianjin) Co., Ltd. Address before: 214434 Binjiang Middle Road, Jiangyin Development Zone, Jiangsu, China, 275 Patentee before: Jiangsu Changdian Sci. & Tech. Co., Ltd. |
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EE01 | Entry into force of recordation of patent licensing contract | ||
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Application publication date: 20101006 Assignee: Jiangsu Changjiang Electronics Technology Co., Ltd. Assignor: Xin Xin finance leasing (Tianjin) Co., Ltd. Contract record no.: 2017320000152 Denomination of invention: Embedded basic island and multi-convex point basic island lead framework and first-etching last-plating method thereof Granted publication date: 20111005 License type: Exclusive License Record date: 20170614 |
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Assignee: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY Co.,Ltd. Assignor: Xin Xin finance leasing (Tianjin) Co., Ltd. Contract record no.: 2017320000152 Date of cancellation: 20200416 |
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Effective date of registration: 20200423 Address after: 214434, No. 78, mayor road, Chengjiang, Jiangsu, Jiangyin, Wuxi Patentee after: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY Co.,Ltd. Address before: 1-1-1802-7, North Zone, financial and Trade Center, No. 6865, Asia Road, Tianjin pilot free trade zone (Dongjiang Free Trade Port) Patentee before: Xin Xin finance leasing (Tianjin) Co., Ltd. |