CN101851002A - Method for synthesizing ordered mesoporous indium oxide - Google Patents
Method for synthesizing ordered mesoporous indium oxide Download PDFInfo
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- CN101851002A CN101851002A CN200910081409A CN200910081409A CN101851002A CN 101851002 A CN101851002 A CN 101851002A CN 200910081409 A CN200910081409 A CN 200910081409A CN 200910081409 A CN200910081409 A CN 200910081409A CN 101851002 A CN101851002 A CN 101851002A
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Abstract
The invention relates to a method for synthesizing ordered mesoporous indium oxide. The method comprises the following steps of: pre-synthesizing mesoporous silicon oxide with relatively big hole-wall connecting holes; removing surfactant in ducts of the holes by adopting extraction treatment; and preparing the ordered mesoporous indium oxide by taking the extracted mesoporous silicon oxide as a hard template. In the method of the invention, the extraction treatment is adopted to reduce the conventional cost of the mesoporous silicon oxide preparation by using 'common' mesoporous silicon oxide and the size of the connecting holes is increased to improve the connectivity of the mesoporous silicon oxide after the extraction, so ordered mesoporous oxide materials can be prepared by using the mesoporous silicon oxide as the hard template.
Description
Technical field
The invention belongs to the inorganic porous material field, specifically relating to a kind of mesopore silicon oxide with extraction treatment is the method that hard template is come synthesizing ordered mesoporous Indium sesquioxide.
Background technology
The scientist of Mobil company in 1992 has synthesized M41S series silicon-based mesoporous material, thereby has expanded to the hole dimension scope of ordering rule porous material mesoporous from micropore; Synthetic SBA such as Stucky series silicon-based mesoporous material further promoted the hole dimension scope especially afterwards; The physicochemical property that the pore passage structure of its high-sequential, huge specific surface area and pore volume, adjustable aperture etc. are unique, make this material at aspects such as photoelectric device, separation purification, biomaterial, catalysis, advanced composite materials huge application potential be arranged, having very at numerous areas such as chemical engineering, information engineering, biotechnology, environmental energy, important use is worth.
The mesoporous material research range expands to non-silica-base material such as metal oxide from silicon-based mesoporous material gradually.Compare with silicon-based mesoporous material, non-silicon-based mesoporous material particularly metal oxide has range of application more widely owing to the diversity of its component and the polytropy of valence state.The former has had a series of synthesis mechanism (as liquid crystal templated mechanism, cooperation mechanism) and preparation method (, sol-gel method synthetic as hydro-thermal): normally utilize tensio-active agent as structure directing agent, utilize the interface interaction between itself and the silicon species to finish self assembling process, these class methods also are collectively referred to as soft template method.But soft template method is at non-silicon-based mesoporous material, run into difficulty in the preparation as metal oxide materials, because the extremely difficult control of the hydrolysis of metal ion in soft template method, the mesoporous material of every kind of metal oxide all needs the reaction system and the strict reaction conditions of different synthetic methods, complexity, and this has restricted the research work such as Application and Development of non-silicon-based mesoporous oxide material greatly.
Scientists constantly attempts developing the method for synthetic non-silicon-based mesoporous material in recent years, and relatively more outstanding is hard template method.This method utilizes the inorganic mesoporous material (as mesopore silicon oxide etc.) of moulding as hard template, the object inorganic precursor is incorporated in the duct of mesoporous material of main part by host-guest interaction, through a series of aftertreatments, again inorganic template is removed, just can obtain the mesoporous material anti-phase with material of main part.But this method requires to pass through in advance the synthesizing ordered mesoporous silicon oxide of tensio-active agent, the tensio-active agent in its duct is removed could be used it as other ordered mesoporous materials of template for preparing then.
Common tensio-active agent removes method at present has calcination processing (as Chinese patent 200710036694.4), micro-wave digestion processing (as Chinese patent ZL 200410066450.7) and extraction treatment (as document 1:D.Margolese, J.A.Melero, S.C.Christiansen, B.F.Chmelka and G.D.Stucky, Chem.Mater., 2000,12,2448 and document 2:D.Grosso, A.R.Balkenende, P.A.Albouy, A.Ayral, H.Amenitsch and F.Babonneau, Chem.Mater., 2001,13,1848) etc.Compare with other two kinds of methods that remove tensio-active agent, extraction treatment be unique not failure surface promoting agent, can the recycling tensio-active agent the method that removes.Because tensio-active agent is the relatively expensive reagent of a class, if not the failure surface promoting agent, with its recycling, for non-silicon-based mesoporous material in actual applications the reduction of cost have special value.
Chinese patent 200710036694.4 and Chinese patent ZL 200410066450.7 have reported that the mesopore silicon oxide that adopts calcination processing or micro-wave digestion to handle prepares ordered mesoporous metal oxide as hard template.But the mesopore silicon oxide that up to the present, does not also have directly to use extraction treatment prepares the bibliographical information of other ordered mesoporous material as hard template.At document 3:Shixi Liu, Bin Yue, Kun Jiao, Yan Zhou, Heyong He Mater.Lett.2006,60, the method that discloses among the 154-158 is in the SBA-15 mesopore silicon oxide after the solution with iron nitrate and zinc nitrate is filled into extraction treatment, after calcining, the dissolved oxygen silicon template, the product that obtains is isolated zinc ferrite nano wire.Because extraction treatment can not remove the tensio-active agent in the mesopore silicon oxide duct usually fully, make that the mesopore silicon oxide connectivity of extraction treatment is relatively poor so be filled in that oxide compound lacks connection each other in the mesoporous main aperture road, thereby the normally isolated nano wire of the product that obtains, have the meso-hole structure that interconnects skeleton and can not form.
Summary of the invention:
The object of the present invention is to provide a kind of synthetic method of ordered mesoporous indium oxide, it is by synthesizing the mesopore silicon oxide with bigger hole wall linked hole in advance, remove tensio-active agent in its duct with extraction treatment then, mesopore silicon oxide with this extraction treatment is that hard template prepares ordered mesoporous indium oxide again, method of the present invention utilizes extraction process to reduce the cost that " common " mesopore silicon oxide at present prepares order mesoporous oxide compound, increase the linked hole size to improve the connectivity of extraction back mesopore silicon oxide, can prepare orderly mesopore oxide material thereby guarantee to use it to make hard template.
The invention provides a kind of synthetic method of ordered mesoporous indium oxide, its mesopore silicon oxide of handling with solvent extraction is that hard template is come synthesizing ordered mesoporous Indium sesquioxide, comprises the steps:
1) has the preparation of the mesopore silicon oxide of hole wall linked hole greatly: tensio-active agent, water and mixed in hydrochloric acid are stirred to tensio-active agent all dissolve, add tetraethoxy and stirring then, leave standstill the back in 130 ℃ of hydro-thermal reaction 1-5 days, cooling back suction filtration, washing, drying get a white powder;
In an embodiment of the invention, the preparation of described mesopore silicon oxide is according at document 4:Abdelhamid Sayari, Bao-Hang Han, Yong Yang, J.AM.CHEM.SOC., 2004,126, disclosed method among the 14348-14349, concrete steps are: with 8.0g tensio-active agent HO (CH
2CH
2O)
20(CH
2CH (CH
3) O)
70(CH
2CH
2O)
20H (hereinafter to be referred as P123, EO
20PO
70EO
20BASF, Pluronic P123), 60g water mixes under 35 ℃ with 240g 2M hydrochloric acid, stir and all dissolved and be uniformly dispersed up to tensio-active agent in 1-12 hour, add 16.72g tetraethoxy (TEOS) then, stir after 5 minutes, transfer in the tetrafluoroethylene bottle and in 35 ℃ of baking ovens, left standstill 20 hours, then at 130 ℃ of hydro-thermal reaction 1-5 days, naturally cooling gets a white powder after suction filtration washs behind the natural drying at room temperature;
2) mesopore silicon oxide use solvent extraction 1) obtains having the mesopore silicon oxide that the aperture is the hole wall linked hole of 3-10 nanometer to remove tensio-active agent wherein;
Described solvent can be but be not limited to be selected from one or more mixture of methyl alcohol, ethanol, ethylene glycol, propyl alcohol, butanols, ether, acetonitrile, acetone, tetrahydrofuran (THF), perhaps the mixed solvent of they and water;
The mass ratio of described mesopore silicon oxide and described solvent is 1: 5-1: 200;
3) with step 2) in the ordered meso-porous silicon oxide handled be hard template, join it in indium salts solution and stirring is flooded, so that the indium salts solution enters in the duct of mesopore silicon oxide; Continue stirring until after solvent volatilizees fully, in air, calcine;
Described indium salt is indium nitrate or indium chloride;
The mass ratio of described indium salt and mesopore silicon oxide is 2-6: 1;
In technical scheme of the present invention, also can according to the pore volume of mesopore silicon oxide regulate and control add the content of indium in the indium salt, make the indium salt that is added change into the 20%-40% that volume behind the Indium sesquioxide accounts for the pore volume of mesopore silicon oxide fully.In an embodiment of the invention, the pore volume of mesopore silicon oxide is 1.00cm
3/ g, the 0.60g mesopore silicon oxide can hold 0.60cm
3Material in its duct, therefore add 1.8g In (NO
3)
34.5H
2O, last decomposition and inversion fully becomes 0.65g In
2O
3(In
2O
3Theoretical density be 7.2g/cm
3), promptly volume is 0.091cm
3, can occupy mesopore silicon oxide pore volume 15%; In like manner, add 1.4g In (NO for the second time
3)
34.5H
2O, the In that changes at last
2O
3Occupy mesopore silicon oxide pore volume 12%; It is 37% of the mesopore silicon oxide pore volume that added that the indium nitrate that is added for twice changes into volume behind the Indium sesquioxide fully;
The temperature of described stirring dipping is 5-80 ℃;
Described calcining temperature is 150-300 ℃, and temperature rise rate is 1-2.5 ℃/min, and calcination time is 2-10h;
4) repeating step 3) once or once;
5) add sodium hydroxide solution in the product after calcining, stir back centrifuging, obtain xanchromatic ordered mesoporous indium oxide material to remove the mesopore silicon oxide template;
The concentration of described sodium hydroxide solution is 2-10M.
The characteristics of present method are to prepare mesopore silicon oxide under higher hydrothermal temperature, make mesopore silicon oxide have bigger hole wall linked hole, thereby the tensio-active agent that can more fully remove in the duct is handled in solvent extraction, strengthen the duct connectivity of the mesopore silicon oxide after the extraction treatment significantly, guaranteeing that indium salt can be relatively easy to enter the duct and reach higher duct compactedness, and finally synthesize high-quality ordered mesoporous indium oxide material.
In addition, compared with prior art, other advantage of the present invention is:
1, use the extraction mesopore silicon oxide to make template, and adopt the solvent extraction mode to remove tensio-active agent in the mesopore silicon oxide duct, can not destroy expensive tensio-active agent, can the recycling tensio-active agent, save cost;
2, need not high-temperature calcination or add extra oxygenant and come the breakdown surface-active agent, save energy, environmental friendliness;
3, Cui Qu mesopore silicon oxide surface has abundant silicon hydroxyl, and it is easier to make inorganic precursors be loaded into mesopore orbit, obtains easily higher duct compactedness, and it is higher to remove the material degree of order that obtains after the silicon oxide template.
Description of drawings
The TEM picture of Fig. 1 embodiment 1 gained mesoporous indium oxide;
The TEM picture of Fig. 2 embodiment 2 gained mesoporous indium oxides;
The TEM picture of Fig. 3 embodiment 3 gained mesoporous indium oxides.
Embodiment:
The invention will be further elaborated below by embodiment:
Embodiment 1
8.0g tensio-active agent P123,60g water and 240g concentration are that the hydrochloric acid of 2M mixes under 35 ℃, stir and all dissolved and be uniformly dispersed up to tensio-active agent in 1-12 hour, add 16.72g tetraethoxy TEOS then, stir after 5 minutes, transfer in the tetrafluoroethylene bottle and in 35 ℃ of baking ovens, left standstill 20 hours, follow 130 ℃ of hydro-thermal reactions 1 day, naturally cooling gets a white powder after suction filtration washs behind the natural drying at room temperature.
Tensio-active agent P123 removes by solvent extraction method: the powdered sample that 1.0g obtains previously joins (concentrated hydrochloric acid that contains 16 milliliters of 36wt%) in 200 milliliters of ethanol, and 70 ℃ are stirred 24h in reflux, filters washing, drying.The ordered meso-porous silicon oxide specific surface area 478m of gained
2/ g, pore volume 1.00cm
3/ g, the linked hole size is greater than 4nm.
Mesopore silicon oxide with the above-mentioned processing of 0.6g is a hard template, it is distributed in the 10g ethanol, add the 1.8g indium nitrate, stir dipping at 40 ℃, so that the indium salts solution enters in the duct of mesopore silicon oxide, after continue stirring solvent flashing, in air in 250 ℃ of calcinings 4 hours (the calcining temperature rise rate be 2.5 ℃/min); The powder that obtains is distributed in the 10g ethanol again, adds the 1.4g indium nitrate, 40 ℃ stir dipping and continue to stir solvent flashing after, in air in 250 ℃ of calcinings 4 hours (the calcining temperature rise rate be 2.5 ℃/min); Add 2M NaOH solution in the product after calcining, stir back centrifuging, promptly obtain ordered mesoporous indium oxide material of the present invention, the specific surface area 126m of this mesoporous indium oxide to remove the silicon oxide template
2/ g, pore volume 0.45cm
3/ g.As shown in Figure 1, the ordered mesoporous material that the indium oxide nano thread array constitutes is obtained, and the diameter of nano wire is at 4-8nm.
Embodiment 2
8.0g tensio-active agent P123,60g water and 240g concentration are that the hydrochloric acid of 2M mixes under 35 ℃, stir and all dissolved and be uniformly dispersed up to tensio-active agent in 1-12 hour, add 16.72g tetraethoxy TEOS then, stir after 5 minutes, transfer in the tetrafluoroethylene bottle and in 35 ℃ of baking ovens, left standstill 20 hours, then 130 degree hydro-thermal reactions are 1 day, naturally cooling gets a white powder after suction filtration washs behind the natural drying at room temperature.Tensio-active agent P123 removes by solvent extraction method: the powdered sample that 1.0g obtains previously joins (concentrated hydrochloric acid that contains 16 milliliters of 36wt%) in 200 milliliters of ethanol, and 70 ℃ are stirred 24h in reflux, filters washing, drying.The ordered meso-porous silicon oxide specific surface area 478m of gained
2/ g, pore volume 1.00cm
3/ g, the linked hole size is greater than 4nm.
Mesopore silicon oxide with the above-mentioned processing of 0.6g is a hard template, it is distributed in the 10g ethanol, add the 1.8g indium nitrate, stir dipping at 40 ℃, so that the indium salts solution enters in the duct of mesopore silicon oxide, after continue stirring solvent flashing, in air in 250 ℃ of calcinings 4 hours (the calcining temperature rise rate be 2.5 ℃/min); The powder that obtains is distributed in the 10g ethanol again, adds the 1.4g indium nitrate, 40 ℃ stir dipping and continue to stir solvent flashing after, in air in 250 ℃ of calcinings 4 hours (the calcining temperature rise rate be 2.5 ℃/min); The powder that obtains is distributed in the 10g ethanol again, adds the 1.0g indium nitrate, 40 ℃ stir dipping and continue to stir solvent flashing after, in air in 250 ℃ of calcinings 4 hours (the calcining temperature rise rate be 2.5 ℃/min); Add 2M NaOH solution in the product after calcining, stir back centrifuging, promptly obtain ordered mesoporous indium oxide material of the present invention, the specific surface area 53m of this mesoporous indium oxide to remove the silicon oxide template
2/ g, pore volume 0.21cm
3/ g.As shown in Figure 2, the ordered mesoporous material that indium oxide nano thread constitutes is obtained, and the diameter of nano wire is approximately 8nm.
Embodiment 3
8.0g tensio-active agent P123,60g water mixes under 35 ℃ with the hydrochloric acid of 240g 2M, stir and all dissolved and be uniformly dispersed up to tensio-active agent in 1-12 hour, add 16.72g tetraethoxy TEOS then, stir after 5 minutes, transfer in the tetrafluoroethylene bottle and in 35 ℃ of baking ovens, left standstill 20 hours, then 130 degree hydro-thermal reactions are 5 days, naturally cooling gets a white powder after suction filtration washs behind the natural drying at room temperature.Tensio-active agent P123 removes by solvent extraction method: the powdered sample that 1.0g obtains previously joins (concentrated hydrochloric acid that contains 16 milliliters of 36wt%) in 200 milliliters of ethanol, and 70 ℃ are stirred 24h in reflux, filters washing, drying.The ordered meso-porous silicon oxide specific surface area 365m of gained
2/ g, pore volume 1.21cm
3/ g, the linked hole size is greater than 8nm.
Mesopore silicon oxide with the above-mentioned processing of 0.6g is a hard template, it is distributed in the 10g ethanol, add the 1.8g indium nitrate, stir dipping at 40 ℃, so that the indium salts solution enters in the duct of mesopore silicon oxide, after continue stirring solvent flashing, in air in 250 ℃ of calcinings 4 hours (the calcining temperature rise rate be 2.5 ℃/min); The powder that obtains is distributed in the 10g ethanol again, adds the 1.4g indium nitrate, 40 ℃ stir dipping and continue to stir solvent flashing after, in air in 250 ℃ of calcinings 4 hours (the calcining temperature rise rate be 2.5 ℃/min); Add 2M NaOH solution in the product after calcining,, stir back centrifuging to remove the silicon oxide template, promptly obtain ordered mesoporous indium oxide material of the present invention, the specific surface area 69m of this mesoporous indium oxide
2/ g, pore volume 0.25cm
3/ g.As shown in Figure 3, the ordered mesoporous material that indium oxide nano thread constitutes is obtained, and the diameter of nano wire is about 9nm.
Claims (8)
1. the synthetic method of an ordered mesoporous indium oxide, its mesopore silicon oxide of handling with solvent extraction is a hard template, comprises the steps:
1) has the preparation of the mesopore silicon oxide of hole wall linked hole greatly: tensio-active agent, water and mixed in hydrochloric acid are stirred to tensio-active agent all dissolve, add tetraethoxy and stirring then, leave standstill the back in 130 ℃ of hydro-thermal reaction 1-5 days, cooling back suction filtration, washing, drying get a white powder;
2) mesopore silicon oxide use solvent extraction 1) obtains having the mesopore silicon oxide that the aperture is the hole wall linked hole of 3-10 nanometer to remove tensio-active agent wherein;
3) with step 2) in the mesopore silicon oxide handled be hard template, join it in indium salts solution and stirring is flooded, so that the indium salts solution enters in the duct of mesopore silicon oxide; Continue stirring until after solvent volatilizees fully, in air, calcine;
Described indium salt is indium nitrate or indium chloride;
The mass ratio of described indium salt and mesopore silicon oxide is 2-6: 1;
4) repeating step 3) once or once;
5) in the calcining products therefrom, add sodium hydroxide solution, stir back centrifuging, obtain required ordered mesoporous indium oxide material to remove the mesopore silicon oxide template.
2. the synthetic method of ordered mesoporous indium oxide according to claim 1 is characterized in that described step 1) is with 8.0g tensio-active agent HO (CH
2CH
2O)
20(CH
2CH (CH
3) O)
70(CH
2CH
2O)
20H, 60g water mixes under 35 ℃ with 240g 2M hydrochloric acid, stir and all dissolved and be uniformly dispersed up to tensio-active agent in 1-12 hour, add the 16.72g tetraethoxy then, stir after 5 minutes, transfer in the tetrafluoroethylene bottle and in 35 ℃ of baking ovens, left standstill 20 hours, then at 130 ℃ of hydro-thermal reaction 1-5 days, naturally cooling is after suction filtration, washing, natural drying at room temperature obtains a white powder.
3. the synthetic method of ordered mesoporous indium oxide according to claim 1, it is characterized in that described step 2) solvent be one or more mixtures that are selected from methyl alcohol, ethanol, ethylene glycol, propyl alcohol, butanols, ether, acetonitrile, acetone, tetrahydrofuran (THF), the perhaps mixed solvent of they and water.
4. according to the synthetic method of claim 1 or 3 described ordered mesoporous indium oxides, it is characterized in that described step 2) mesopore silicon oxide and the mass ratio of described solvent be 1: 5-1: 200.
5. the synthetic method of ordered mesoporous indium oxide according to claim 1 is characterized in that the indium salt that is added in the described step 3) changes into the 20%-40% that volume behind the Indium sesquioxide accounts for the pore volume of mesopore silicon oxide fully.
6. the synthetic method of ordered mesoporous indium oxide according to claim 1 is characterized in that the temperature of the stirring dipping in the described step 3) is 5-80 ℃.
7. the synthetic method of ordered mesoporous indium oxide according to claim 1 is characterized in that the calcining temperature in the described step 3) is 150-300 ℃, and temperature rise rate is 1-2.5 ℃/min, and calcination time is 2-10h.
8. the synthetic method of ordered mesoporous indium oxide according to claim 1, the concentration that it is characterized in that the sodium hydroxide solution in the described step 5) is 2-10M.
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| CN113501548A (en) * | 2021-06-10 | 2021-10-15 | 武汉大学 | Mesoporous metal oxide hollow material with high specific surface area and preparation method thereof |
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