CN101850970B - Resource utilization method of silicon wafer cutting and machining mortar at room temperature - Google Patents
Resource utilization method of silicon wafer cutting and machining mortar at room temperature Download PDFInfo
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Abstract
The invention relates to a resource utilization method of silicon wafer cutting and machining mortar at room temperature. According to the technical scheme provided by the invention, the resource utilization method comprises the following steps of: 1. adding an interfacial modifier in the silicon wafer cutting and machining mortar and evenly mixing, wherein the amount of the interfacial modifier is 1-20 percent (weight ratio); 2. carrying out first-order or multi-order mechanical separation on the mixture in the step 1 through a mechanical separator to obtain a solid-phase material and a liquid-phase material; 3. carrying out alkaline-washing, acid-washing and cleaning on the solid-phase material in the step 2, and drying and grading the obtained wet material to obtain a high-purity silicon carbide product; 4. removing ions in the liquid-phase material in the step 2 through strong acid and strong base ion exchange resin, and controlling two key indexes of ion contents, conductivity, and the like; decoloring by using a decoloring agent, and separating by using the mechanical separator to obtain a recovered cutting fluid. From the step 1 to the step 4, except for the step 3 in whichthe drying temperature is necessary to improve according to drying working procedures in the drying process of the wet material, all other operation processes are respectively carried out at the roomtemperature. The method has low unit energy consumption and low one-time equipment investment, is used for industrial practice, and has the characteristics of simple and convenient implementation, distinct flow and stable components.
Description
Technical field
The present invention relates to a kind of silicon slice cutting and processing mortar resource utilization method at ambient temperature.Application Areas mainly is the recycling of sun power industry silicon slice cutting and processing mortar, electron trade silicon slice cutting and processing mortar.
Technical background
Silicon chip is the important foundation of development solar energy industry.In silicon chip working process, it is current processing mode in the world at present that the linear cutting equipment by special use cuts into certain thickness sheet material with silicon rod (ingot).Along with developing rapidly of solar energy industry in the global range, amount of finish and the demand of silicon chip increase substantially; Corresponding, the mortar that silicon chip cutting processing link the produces growth that also can be directly proportional.
The whole process of brilliant material cutting processing need depend on being used of cutting fluid (claiming cutting liquid, suspension again) and silicon carbide micro-powder, wherein cutting fluid plays the effect of dispersion agent in the cutting processing process, make silicon carbide in cutting process, be evenly distributed, and take away the frictional heat that in cutting process, produces in a large number.The a large amount of cutting and machining mortar of association in the process of cutting processing production silicon chip.The main component of mortar is cutting fluid, silicon carbide, silicon powder and little metal impurity, will produce serious environmental and influence problem if can not get appropriate disposal.A large amount of silicon slice cutting and processing mortars not only can produce serious environmental and pollute, and waste a large amount of resources if deal with improperly.Realize the application technology as the second resource of silicon slice cutting and processing mortar, not only can increase the comprehensive rate of utilization of social resources, more can reduce the manufacturing cost of crystal silicon sheet, and can be in the pollution of fundamentally avoiding the mortar material may cause environment.
About the resource utilization method from the silicon wafer cutting and machining mortar, in many technical process of leading that appeared in the newspapers operation that all inevitably need heat up, heat, processing temperature even requirement reach 80～100 ℃.On the one hand, this will inevitably bring the increase of heat supply, facility investment and running cost; On the other hand, owing to the rising of temperature, can cause the stability change of active princlple in the mortar, under near 100 ℃ operation situation, even may cause that active princlple decomposes, thereby cause the decline of recycling efficient and the increase of recovery difficult.
The invention provides and a kind ofly can realize the silicon slice cutting and processing mortar resource utilization method at ambient temperature, its unit source consumes low, disposable apparatus less investment.Inventive method is used for industrial practice, has easy, clear process, the characteristics that component is stable of realizing.
Summary of the invention
The invention provides a kind of method that realizes the silicon slice cutting and processing mortar recycling at ambient temperature.According to the invention technology, its implementation comprises the steps:
Step 1 adds interface modifier in silicon slice cutting and processing mortar, mix, and the interface modifier consumption is 1%-20% (weight ratio);
Step 2 is carried out one or more levels mechanical separation with the mixture in the step 1 by mechanical separator, obtains solid formation and liquid phase thing;
Step 3 is carried out alkali cleaning, pickling and cleaning with gained solid formation in the step 2, after gained wet feed drying, the classification, gets the high-purity carborundum product;
Step 4 is removed ion with gained liquid phase thing in the step 2 by strong acid and strong base type ion exchange resin, control metal ion content, two key indexs of specific conductivity; Pass through bleaching agent bleaching again, mechanical separator obtains reclaiming cutting fluid after separating;
Above-mentioned steps one is to step 4, and except the oven dry of wet feed described in the step 3 can be necessary to improve the bake out temperature according to the drying process needs, all the other all operations processes are all carried out operation at ambient temperature.
Silicon slice cutting and processing mortar of the present invention resource utilization method at ambient temperature is characterized in that, silicon slice cutting and processing mortar is solar energy-level silicon wafer cutting and machining mortar and electronic-grade silicon chip cutting and machining mortar.
Silicon slice cutting and processing mortar of the present invention resource utilization method at ambient temperature is characterized in that, interface modifier described in the step 1 comprises one or more the mixture in the following substances:
The polyoxyethylene glycol of a, ethylene glycol, Diethylene Glycol, triethylene glycol, molecular-weight average 200～10000Dalton;
B, propylene glycol;
C, nonionogenic tenside;
One or more mixtures in d, polyethylene glycol monooleate, polyoxyethylene glycol dioleic acid ester, polyethylene glycol mono stearate, the Triglycol distearate;
E, the secondary alkyl ethoxylated permeate agent of polyoxyethylene;
F, viscosity modifier, the main component of this viscosity modifier is for containing polyhydric polyacrylic ester.
Silicon slice cutting and processing mortar of the present invention resource utilization method at ambient temperature, it is characterized in that mechanical separator described in the step 2, four is the one or more combination in strainer, settling bowl, scraper plate settling vessel, inclined plate settler, horizontal centrifuge, vertical centrifugal machine, tubular-bowl centrifuge and the swirler.
Silicon slice cutting and processing mortar of the present invention resource utilization method at ambient temperature is characterized in that, the used alkali of alkali cleaning described in the step 3 is the metal hydroxides of liquid or solid; The used acid of pickling is mineral acid or organic acid, perhaps the mixture of organic acid and mineral acid; Described acid is pure acid or acid solution; With clean clear water, after cleaning, obtain the silicon carbide wet feed through mechanical separation again during cleaning; Metal hydroxides described herein is sodium hydroxide, potassium hydroxide; Described mineral acid is sulfuric acid, carbonic acid, nitric acid, hydrochloric acid, hydrofluoric acid; Described organic acid is acetic acid, oxalic acid, citric acid.
Silicon slice cutting and processing mortar of the present invention resource utilization method at ambient temperature is characterized in that, described in the step 3 oven dry during wet feed used furnace drying method be: fluid-bed drying, fixed bed drying method; 40～150 ℃ of bake out temperatures, oven dry pressure is constant pressure and dry and vacuum-drying; Described stage division is: method of sieving and the classification of air-flow method.
Silicon slice cutting and processing mortar of the present invention resource utilization method at ambient temperature is characterized in that, the metal ion content of control described in the step 4 refers to that the liquid phase thing is by metal ion content≤30ppm in the system behind the strong acid and strong base type ion exchange resin; The specific conductivity that described control specific conductivity refers to system after the liquid phase thing is by strong acid and strong base type ion exchange resin when centigradetemperature is 25 ℃ less than 20 μ s/cm.
Silicon slice cutting and processing mortar of the present invention resource utilization method at ambient temperature is characterized in that, discoloring agent described in the step 4 is gac, polymerize aluminum chloride, with in cationic metal-salt, the organic discoloring agent of polymer one or more.
Embodiment
Silicon slice cutting and processing mortar resource utilization method at ambient temperature is described, specifically may further comprise the steps:
(1) silicon slice cutting and processing mortar is carried out through pre-treatment in settling tank, to remove contained large granular impurity, send in the mixing tank by transferpump, open stirring and add polyoxyethylene glycol, propylene glycol, diethylene glycol ether, ethylene glycol monomethyl ether, tensio-active agent, permeate agent, polyoxyethylene glycol oleic acid vinegar, viscosity modifier etc., the add-on of above-mentioned interface modifier is 1%～20% of system gross weight.Mixture further mixes at ambient temperature.
(2) mixture that stirs is sent to mechanical separator and carries out one or more levels separation, according to the cutting of silicon materials line the corresponding filtering accuracy of control is set in the size-grade distribution requirement of silicon carbide abrasive.The mechanical separator that adopts can be the one or more combination in strainer, settling bowl, scraper plate settling vessel, inclined plate settler, horizontal centrifuge, vertical centrifugal machine, tubular-bowl centrifuge and the swirler.The operation of above-mentioned detached job is carried out at ambient temperature.
(3) solid formation that separation is obtained carries out alkali cleaning earlier, alkali cleaning can be liquid caustic soda or solid alkali, alkali is NaOH, metal hydroxidess such as KOH, and wash temperature is normal temperature, after the alkali cleaning, carry out pickling behind the separating liquid, pickling is mineral acid or organic acids such as oxalic acid, citric acid such as sulfuric acid, carbonic acid, nitric acid, hydrochloric acid, the perhaps mixture of organic acid and mineral acid, acid can be pure acid or solution, and temperature is normal temperature.After separating removal liquid after the pickling, extremely neutral with water rinse.The rinsing temperature is normal temperature.After separating again, hygrometric state is carried out thousand dry.Drying can be used fixed bed drying device or fluidized bed dryer; The drying pressure pattern can be normal pressure, pressurization or vacuum-drying.According to the needs of drying process, 40～150 ℃ of bake out temperatures.Silicon carbide to drying sieves, and obtains the silicon carbide micro-powder of different purposes according to screening.
(4) the liquid phase thing that obtains after the mechanical separation is removed ion by strong acid and strong base type ion exchange resin, two key indexs such as control ion content, specific conductivity.In operating process, make liquid phase thing metal ion content≤30ppm in the system behind strong acid and strong base type ion exchange resin, less than passing through bleaching agent bleaching again behind the 20 μ s/cm, discoloring agent comprises gac, polymerize aluminum chloride to specific conductivity when centigradetemperature is 25 ℃, with in cationic metal-salt, the organic discoloring agent of polymer one or more; Carry out again obtaining reclaiming cutting fluid after mechanical separator separates.In the regeneration of ion-exchange resin process, the aqueous hydrochloric acid regeneration of sun bed functional quality mark 5%, the aqueous sodium hydroxide solution regeneration of cloudy bed functional quality mark 5%.The aforesaid operations process is all carried out operation at ambient temperature.
Embodiment 1:
Utilize the technology of the present invention to handle silicon slice cutting and processing mortar at ambient temperature, wherein the mass ratio of silicon carbide, cutting fluid is 1: 1, the mass ratio of silicon carbide, cutting fluid is 45% in the silicon slice cutting and processing mortar, and used silicon carbide, cutting fluid are from Lianyungang Jiayu Electron Material Science Co., Ltd.Its concrete steps are as follows:
Step 1, to send in the 2000L mixing tank by transferpump through the mortar 1000Kg behind the pre-treatment removal large granular impurity, open and stir after 10 minutes, in 20 minutes, add the 50Kg interface modifier, mixing temperature is room temperature, the consisting of of separating agent: Macrogol 200 (PEG200) 25g, cetomacrogol 1000 0 (PEG10000) 10g, nonionogenic tenside (OP-10) 10g, permeate agent (JFC) 5g.Mixture further mixed 1 hour at ambient temperature.
Step 2 is transported to said mixture and enters separating centrifuge by conveyer, carry out centrifugation at ambient temperature, obtains solid formation and liquid phase thing.
Step 3 is transferred to the gained solid formation in the 1000L washing tank, slowly adds 10%NaOH solution, slowly open to stir, and stirs 0.5h, enters separating centrifuge, remove most of liquid after; Add 20% hydrochloric acid again, stir 0.5h after, enter separating centrifuge, remove most of liquid after; Use the clear water rinsing to neutral again, after mechanical separation, under 90 ℃, by fixed bed drying device constant pressure and dry 4h, obtain solid silicon carbide powder 370Kg after the drying.The aforesaid operations process is all operations at ambient temperature of all the other links except baking operation.
Step 4, gained liquid phase thing in the step 2 is removed ion by strong acid and strong base type ion exchange resin, when the metal ion content of system is 3.1ppm, specific conductivity when being 8 μ s/cm 25 ℃ of centigradetemperatures, add gac and decolour, obtain reclaiming cutting fluid 415Kg after the filtration.The aforesaid operations process is operation at ambient temperature all.
Embodiment 2:
Utilize the technology of the present invention to handle silicon slice cutting and processing mortar at ambient temperature, wherein the mass ratio of silicon carbide, cutting fluid is 1: 1, the mass ratio of silicon carbide is 50% in the silicon slice cutting and processing mortar, the mass ratio of cutting fluid is 42%, used silicon carbide from sea, Zhengzhou king's micro mist company limited, cutting fluid from Lianyungang Jiayu Electron Material Science Co., Ltd.Its concrete steps are as follows:
Step 1, to send in the 2000L mixing tank by transferpump through the mortar 1000Kg behind the pre-treatment removal large granular impurity, open and stir after 10 minutes, in 20 minutes, add the 40Kg interface modifier, mixing temperature is room temperature, consisting of of separating agent: poly(oxyethylene glycol) 400 (PEG200) 10g, nonionogenic tenside (OP-10) 10g, permeate agent (JFC) 20g.Mixture further mixed 1 hour at ambient temperature.
Step 2 is transported to said mixture and enters separating centrifuge by conveyer, carry out centrifugation at ambient temperature, obtains solid formation and liquid phase thing.
Step 3 is transferred to the gained solid formation in the 1000L washing tank, slowly adds 10%NaOH solution, slowly open to stir, and stirs 0.5h, enters separating centrifuge, remove most of liquid after; Add 20% hydrochloric acid again, stir 0.5h after, enter separating centrifuge, remove most of liquid after; Use the clear water rinsing to neutral again, after mechanical separation, under 90 ℃, by fixed bed drying device constant pressure and dry 4h, obtain solid silicon carbide powder 433Kg after the drying.The aforesaid operations process is all operations at ambient temperature of all the other links except baking operation.
Step 4, gained liquid phase thing in the step 2 is removed ion by strong acid and strong base type ion exchange resin, when the metal ion content of system is 2.1ppm, specific conductivity when being 6 μ s/cm 25 ℃ of centigradetemperatures, add gac and decolour, obtain reclaiming cutting fluid 383Kg after the filtration.The aforesaid operations process is operation at ambient temperature all.
Claims (8)
1. silicon slice cutting and processing mortar resource utilization method at ambient temperature is characterized in that described method comprises the steps:
Step 1 adds interface modifier in silicon slice cutting and processing mortar, mix, and the interface modifier consumption is 1%-20% (weight ratio);
Step 2 is carried out one or more levels mechanical separation with the mixture in the step 1 by mechanical separator, obtains solid formation and liquid phase thing;
Step 3 is carried out alkali cleaning, pickling and cleaning with gained solid formation in the step 2, after gained wet feed drying, the classification, gets the high-purity carborundum product;
Step 4 is removed ion with gained liquid phase thing in the step 2 by strong acid and strong base type ion exchange resin, control metal ion content, two key indexs of specific conductivity; Pass through bleaching agent bleaching again, mechanical separator obtains reclaiming cutting fluid after separating;
Above-mentioned steps one is to step 4, and except the oven dry of wet feed described in the step 3 can be necessary to improve the bake out temperature according to the drying process needs, all the other all operations processes are all carried out operation at ambient temperature.
2. according to the described silicon slice cutting and processing mortar of claim 1 resource utilization method at ambient temperature, it is characterized in that: silicon slice cutting and processing mortar is solar energy-level silicon wafer cutting and machining mortar and electronic-grade silicon chip cutting and machining mortar.
3. according to the described silicon slice cutting and processing mortar of claim 1 resource utilization method at ambient temperature, it is characterized in that interface modifier described in the step 1 is one or more the mixture in the following substances:
The polyoxyethylene glycol of a, ethylene glycol, Diethylene Glycol, triethylene glycol, molecular-weight average 200～10000Dalton;
B, propylene glycol;
C, nonionogenic tenside;
One or more mixtures in d, polyethylene glycol monooleate, polyoxyethylene glycol dioleic acid ester, polyethylene glycol mono stearate, the Triglycol distearate;
E, the secondary alkyl ethoxylated permeate agent of polyoxyethylene;
F, viscosity modifier, the main component of this viscosity modifier is for containing polyhydric polyacrylic ester.
4. according to the described silicon slice cutting and processing mortar of claim 1 resource utilization method at ambient temperature, it is characterized in that mechanical separator described in the step 2, four is the one or more combination in strainer, settling bowl, scraper plate settling vessel, inclined plate settler, horizontal centrifuge, vertical centrifugal machine, tubular-bowl centrifuge and the swirler.
5. according to the described silicon slice cutting and processing mortar of claim 1 resource utilization method at ambient temperature, it is characterized in that the used alkali of alkali cleaning described in the step 3 is the metal hydroxides of liquid or solid; The used acid of pickling is mineral acid or organic acid, perhaps the mixture of organic acid and mineral acid; Described acid is pure acid or acid solution; With clean clear water, after cleaning, obtain the silicon carbide wet feed through mechanical separation again during cleaning; Metal hydroxides described herein is sodium hydroxide, potassium hydroxide; Described mineral acid is sulfuric acid, carbonic acid, nitric acid, hydrochloric acid, hydrofluoric acid; Described organic acid is acetic acid, oxalic acid, citric acid.
6. according to the described silicon slice cutting and processing mortar of claim 1 resource utilization method at ambient temperature, it is characterized in that, described in the step 3 oven dry during wet feed used furnace drying method be: fluid-bed drying, fixed bed drying method; 40～150 ℃ of bake out temperatures, oven dry pressure is constant pressure and dry and vacuum-drying; Described stage division is: method of sieving and the classification of air-flow method.
7. according to the described silicon slice cutting and processing mortar of claim 1 resource utilization method at ambient temperature, it is characterized in that the metal ion content of control described in the step 4 refers to that the liquid phase thing is by metal ion content≤30ppm in the system behind the strong acid and strong base type ion exchange resin; The specific conductivity that described control specific conductivity refers to system after the liquid phase thing is by strong acid and strong base type ion exchange resin when centigradetemperature is 25 ℃ less than 20 μ s/cm.
8. according to the described silicon slice cutting and processing mortar of claim 1 resource utilization method at ambient temperature, it is characterized in that discoloring agent described in the step 4 is gac, polymerize aluminum chloride, with in the organic discoloring agent of cationic metal-salt polymer one or more.
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Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102031193B (en) * | 2010-11-02 | 2013-12-25 | 薛荣秀 | Method for recovering silicon carbide and polyglycol cutting solution from silicon slice cutting waste mortar |
| CN101982536B (en) * | 2010-11-02 | 2011-11-09 | 林小妹 | Method for recovering silicon carbide and polyethylene glycol cutting fluid from waste silicon wafer cutting fluid |
| CN102329688A (en) * | 2011-07-22 | 2012-01-25 | 周彬 | Method for recycling cutting fluid in single crystal silicon cutting fluid waste mortar |
| CN102408167B (en) * | 2011-10-08 | 2013-02-13 | 江苏佳宇资源利用股份有限公司 | Method for realizing grey water recycling of sewage produced in waste mortar recovery process |
| CN102502650A (en) * | 2011-10-08 | 2012-06-20 | 江苏佳宇资源利用股份有限公司 | Method for preparing crystalline silicon components from crystalline silicon cutting waste mortar |
| CN102502643B (en) * | 2011-10-08 | 2013-06-05 | 江苏佳宇资源利用股份有限公司 | Method for realizing resource recycling of silicon powder components in waste mortar from crystalline silicon cutting |
| CN102689905B (en) * | 2012-06-04 | 2015-01-28 | 江南大学 | Method for treating silicon in waste oil sand generated in silicon ingot cutting process |
| CN103435210A (en) * | 2013-07-19 | 2013-12-11 | 江苏吉星新材料有限公司 | Cutting fluid recycling method |
| CN103623937B (en) * | 2013-11-28 | 2016-05-04 | 安徽苏源光伏科技有限公司 | In a kind of mortar, silicon separates medicament and preparation method thereof with carborundum |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101239246A (en) * | 2008-02-20 | 2008-08-13 | 江南大学 | Method for recovering cutting solution from by-product of silicon chip cutting processing |
| CN101244823A (en) * | 2008-02-20 | 2008-08-20 | 江南大学 | Method for recycling silicon carbide from by-product in silicon slice cutting process |
| CN101474511A (en) * | 2008-12-17 | 2009-07-08 | 西安交通大学 | Process for recovering polyethylene glycol and silicon carbide in waste mortar from silicon wafer wire cutting |
-
2010
- 2010-04-23 CN CN 201010153823 patent/CN101850970B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101239246A (en) * | 2008-02-20 | 2008-08-13 | 江南大学 | Method for recovering cutting solution from by-product of silicon chip cutting processing |
| CN101244823A (en) * | 2008-02-20 | 2008-08-20 | 江南大学 | Method for recycling silicon carbide from by-product in silicon slice cutting process |
| CN101474511A (en) * | 2008-12-17 | 2009-07-08 | 西安交通大学 | Process for recovering polyethylene glycol and silicon carbide in waste mortar from silicon wafer wire cutting |
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