CN101847829A - Method for acquiring broadband modulating high-power laser output and corresponding device - Google Patents
Method for acquiring broadband modulating high-power laser output and corresponding device Download PDFInfo
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- CN101847829A CN101847829A CN200910119749A CN200910119749A CN101847829A CN 101847829 A CN101847829 A CN 101847829A CN 200910119749 A CN200910119749 A CN 200910119749A CN 200910119749 A CN200910119749 A CN 200910119749A CN 101847829 A CN101847829 A CN 101847829A
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Abstract
The invention provides a broadband modulating method for acquiring high-power lasers. A plurality of semiconductor laser LD units send out lasers in the form of non lock phase, and the lasers are incident in a plurality of electro-absorption modulation units corresponding to the LD units; broadband RF modulation signals are connected in parallel and loaded onto each EAM unit to respectively modulate the light intensity of the output light of each LD unit; a plurality of light amplification units are respectively utilized to carry out liner amplification on the laser output after modulation; a plurality of amplification modulation lighting units consisting of the plurality of LD units, the EAM units and the light amplification units output lasers in a planar array mode; and then output beams are aligned and calibrated. The invention also provides a small integrated broadband modulating high-power laser source device and a composition method thereof. The invention can output the intensity modulation high-power lasers which cover the entire semiconductor laser wave band, and has higher modulation bandwidth, modulation frequency and modulation depth, and good beam quality.
Description
Technical field
The present invention relates to semiconductor laser modulation field, particularly relate to method and a kind of small integrated high power external modulation light supply apparatus of a kind of acquisition high power (being at least a watt level) external modulation laser output.
Background technology
In modern laser active imaging system, in order to carry out remote, high-precision target imaging, the intensity modulation of the output of high power laser light transmitter being carried out the broadband is one of them key, and this requires us to design and adopts suitable laser intensity modulator approach.And with at present, the high power laser light that obtains wide-band modulation is still a difficult point.In the prior art, initial modulation scheme is to adopt the power supply reactance modulation system that the high-power semiconductor laser of 808nm is carried out internal modulation, and has obtained some experimental results in active imaging system.But this modulator approach all has very big bottleneck at aspects such as going out luminous power, modulation rate, bandwidth, is difficult to satisfy demand remote, the high-precision laser imaging system.
The most promising beam modulation method that is used for modulation system laser active imaging system at present is " external modulation ", and we are divided into its summary " directly external modulation " and " external modulation indirectly " two classes." directly external modulation " is meant that effects such as utilizing electric light, acousto-optic directly carries out intensity modulated to high power laser light." external modulation indirectly " then is meant at first low power laser modulated as " seed " light, and then the modulation system that light amplification is carried out in output to " seed " light.
" directly external modulation " comprises body modulation and waveguide modulation.For the body modulation, owing to adopt the media of bulky crystal as beam modulation, the high power that light modulated power reaches more than ten several watts is no problem.But it needs very high half-wave voltage (up to last hectovolt) is its maximum defective, this means that the level of power consumption of system will increase greatly, and burden increases the weight of greatly.The modulation bandwidth of adding this device often is subjected to bigger restriction, and volume is big, efficient is low during high frequency modulated, also is difficult for obtaining good output beam quality, so this modulator approach is difficult to practical for the wide-band modulation of high power laser light.For waveguide modulation, because the length of waveguide is much larger than its cross-sectional width, thereby half-wave voltage can be reduced to several volts are only arranged, and carries out combiner in the optical fiber and also wants much simple, can guarantee good beam quality.But because the waveguide cross section is very little, for avoiding light injury, general modulated luminous power reaches hundreds of milliwatts and is difficult to.
The scheme that " external modulation indirectly " can be summed up as use " seed " laser+optical fiber amplification realizes high-power wide-band modulation laser output, promptly at first utilize the good modulating characteristic of waveguide modulation, the semiconductor laser of lower power levels modulated be used as seed laser, use image intensifer to amplify and obtain high-power modulated laser then being input to seed light among it.At present, " seed " laser generally is to adopt semiconductor laser (LD) and M-Z:LiNbO
3The combination of waveguide modulator realizes.The image intensifer then good high-gain of serviceability is mixed the terres rares fiber amplifier.The technology of mixing the amplification of terres rares optical fiber is comparatively ripe at present, and especially the EDFA of 1550nm (Erbium-doped Optical Fiber Amplifier, erbium-doped fiber amplifier) has obtained extremely successful application in the signal relay of optical fiber communication.To erbium-doped fiber amplifier, present being seen maximum output light average power can reach higher relatively 40dBm (10w).Yet (for example er-doped: 1550nm mixes praseodymium: 1310nm), that is to say that the method that adopts optical fiber to amplify can not obtain the light modulated of all wave bands to have only seldom optical band to have correspondingly amplifying fiber at present.For the laser active imaging system, the laser wavelength that is in atmospheric window is crucial, yet optical fiber amplifies the expansion that the restriction of optical band has seriously been restricted the intensity modulation formula laser imaging system that is rising.For example, the atmospheric window that exists together, the 808nm wave band is compared the 1550nm wave band and is had good space transmission characteristic too, and based on above-mentioned analysis, be subjected to the restriction of the amplifying fiber of fiber amplifier inside, also do not have to amplify the fiber amplifier that wavelength is the laser of 808nm at present.Therefore, realize that for utilizing fiber amplifier to amplify " seed " light in the prior art scheme of modulation indirectly in fact also can't satisfy the high power laser light modulation demand of many important wave bands at present.In addition, the application in the laser imaging system of types of fiber product in space also can be subjected to the influence of space radiation, and this has also further limited the possible range of application of " modulation indirectly ".
Summary of the invention
The present invention proposes a kind of method and corresponding light supply apparatus that obtains the high power laser light of wide-band modulation.The laser that this method is exported, its wave band almost can cover all wave bands of semiconductor laser in principle, and the wave band restriction and the Output optical power that can not be subjected to fiber amplifier limit, and its purposes mainly is to provide well behaved intensity modulated LASER Light Source for laser imaging system.
For achieving the above object, the present invention's one scheme provides the method that obtains the output of high power external modulation laser, technical scheme is: make a plurality of semiconductor laser LD unit send laser with non-phase-locked form, incide with unit, described LD unit corresponding a plurality of electro-absorption modulation (Electro-absorption Modulator is hereinafter to be referred as EAM) in; Loading on described each EAM unit the broadband RF modulation signals parallel connection respectively, the output light to described each LD unit carries out intensity modulation; Use a plurality of Optical Amplifier Units respectively to laser output the carrying out linear amplification after each modulation; Above-mentioned a plurality of LD unit, EAM unit and Optical Amplifier Unit made up make it with face formation formula output laser; Then output beam is collimated and proofread and correct.
Another program of the present invention provides a kind of small integrated high power external modulation light supply apparatus and constructive method thereof, this small integrated high power external modulation light supply apparatus comprises: a plurality of semiconductor laser units and a plurality of electro-absorption modulation unit, and they are grown in and constitute the electro-absorption modulation laser linear array on the same substrate; With the electro-absorption modulation laser linear array that is obtained be bonded to heat sink on, can constitute electro-absorption modulation laser linear array bar; With the stacked accumulation that (is generally 1.6mm) at certain intervals of a plurality of electro-absorption modulation laser linear array bars and be fixed on same big heat sink on, form the electro-absorption modulation laser emitting surface battle array of two-dimensional array form; This wave band semiconductor optical amplifier that battle array is arranged on the output of electro-absorption modulation laser emitting surface battle array is integrated; At last, the output of the electro-absorption modulation laser emitting surface battle array after amplifying is placed beam collimation and correcting device.
The method of the acquisition wide-band modulation high power laser light output that provides according to the embodiment of the invention and corresponding light supply apparatus, the realization principle that is based upon electro-absorption modulation principle and high power semiconductor array laser proposes.We can say that the use method and apparatus that the embodiment of the invention provided can be exported the high-power modulated laser of all semiconductor laser wave bands in principle.
Description of drawings
Fig. 1 is the method flow diagram of the high power laser light output of acquisition wide-band modulation according to an embodiment of the present invention;
The flow chart of the constructive method of the small integrated wide-band modulation high power laser sources device that provides according to one embodiment of the invention is provided Fig. 2;
The structural representation of the EML unit of the small integrated wide-band modulation high power laser sources device that provides according to the embodiment of the invention is provided Fig. 3;
The structural representation of the EML linear array bar of the small integrated high power external modulation light supply apparatus that provides according to the embodiment of the invention is provided Fig. 4;
The structural representation of the two-dimentional stacked EML array of the small integrated high power external modulation light supply apparatus that provides according to the embodiment of the invention is provided Fig. 5;
The EML face battle array schematic diagram of the small integrated high power external modulation light supply apparatus that provides according to the embodiment of the invention is provided Fig. 6;
The structural representation of the small integrated high power external modulation light supply apparatus that provides according to the embodiment of the invention is provided Fig. 7.
Embodiment
Below in conjunction with accompanying drawing, the embodiment of the invention is described further.
Fig. 1 is the flow chart of the method for acquisition high power external modulation laser output according to an embodiment of the present invention.As shown in the figure, the method for a kind of high power laser light output that obtains wide-band modulation of providing of one embodiment of the invention may further comprise the steps:
Step S11 utilizes a plurality of LD unit to send laser with non-phase-locked form respectively.Be covered with electrode on each LD unit, the driving current signal parallel connection be loaded on the electrode of each LD unit, drive the LD unit and obtain laser.Do not carry out phase-lockedly between each LD unit, this just makes that the initial phase of output light of each LD unit is mixed and disorderly.The laser that each LD unit is sent incides respectively in corresponding with it a plurality of electro-absorption modulation (Electro-absorption Modulator is hereinafter to be referred as EAM) unit.
Step S12 loads on the broadband RF modulation signals parallel connection on the electrode of each EAM unit, comes respectively the output light of each LD unit is carried out intensity modulation, obtains the laser output of a plurality of electro-absorption modulation.The RF modulation power source loads on each EAM unit with parallel form, need not higher RF modulation voltage, both can realize high modulation bandwidth and high modulation frequency.
Step S13, use a plurality of Optical Amplifier Units to the laser of each electro-absorption modulation output carry out linear amplification respectively, make the power output of the electro-absorption modulation laser cell that each is made of LD unit, EAM unit and Optical Amplifier Unit obtain increasing.Obtain in desire under the situation of modulated laser of a certain concrete power, add the power output that suitable Optical Amplifier Unit can increase each luminescence unit of being made up of LD unit and EAM unit, thereby effectively reduce the luminescence unit sum.
Step S14, with combination of face formation formula and output laser, it is compact that each luminescence unit is arranged with a plurality of electro-absorption modulation laser cells after light intensity is amplified.
Step S15 proofreaies and correct modulated laser output beam travel direction collimation and visual field after each amplification.The output beam of each luminescence unit is through collimating the back with approaching identical angle of divergence outgoing, the outgoing beam of each luminescence unit overlaps mutually, because the initial phase of each light beam is mixed and disorderly, the result of a large amount of mutual coherent superposition of light beam has uniform laser visual field in the far field.Can utilize optical system that the visual field of output beam is proofreaied and correct, to obtain our the laser field coverage of desired acquisition in practice.
The resulting laser power of method of high power laser light output that obtains wide-band modulation according to an embodiment of the invention is relevant with the quantity of described luminescence unit, in general, commercial distributed feedback type semiconductor laser (Distributed Feedback-Laser Diode, abbreviation DFB-LD) power output is difficult to surpass 10mw, Output optical power after electro-absorption modulation is the number milliwatt, if the luminescence unit number of formation face battle array reaches the high power laser light output that can realize several watts more than hundreds of.In the method that we discussed, also used as semiconductor optical amplifier (Semiconductor Optical Amplifier, abbreviation SOA) Optical Amplifier Unit, SOA under the present in general technology has the ability to realize about 10 times luminous power amplification, and this might make the luminescence unit number reduce about 10 times.Simultaneously, for different concrete application backgrounds, employed modulation signal generally is not quite similar.The method that the present invention discussed should have the modulating performance of electro-absorption modulation, has the ability to realize the modulation bandwidth of tens of GHz.
The method of the acquisition high power external modulation laser output that the embodiment of the invention provides is with respect to the modulation seed light+fiber amplifier scheme of " external modulation indirectly ", can overcome the shortcoming of the modulated laser that can not obtain many important wave bands, also overcome the defective of under the limited application of many optical fiber (for example: optical fiber application in space can be subjected to the influence of irradiation space), carrying out the high power laser light modulation; With respect to " body modulation " this " directly external modulation " method, have higher modulation bandwidth and modulating frequency and better beam quality; And, have on the whole better modulating performance and higher power output with respect to " power supply is directly modulated " this " directly internal modulation " method.
Fig. 2 is the flow chart of high power laser light output device of the acquisition wide-band modulation of another execution mode according to the present invention.The flow process of the high power laser light output device that can obtain wide-band modulation that as shown in the figure, this embodiment provides may further comprise the steps:
Step S201 utilizes the modern semiconductors epitaxial growth technology to grow a plurality of electro-absorption modulation laser (EML) linear array.Described EML linear array is the arrangement of a plurality of EML unit in the one dimensional linear array mode, and each described EML unit is made up of a LD unit (for example, DFB-LD unit) and EAM unit correspondingly.Present embodiment LD unit and EAM unit utilize the epitaxy technique growth to form on same substrate, can reduce to insert loss like this, corresponding accuracy between the compactedness of increase structure and each unit.The laser that each DFB-LD unit is sent is not carry out phase-lockedly, is modulated during by the EAM unit when laser, and the orderly combination of these two kinds of unit promptly constitutes the EML cellular construction.
Step S202, a plurality of EML linear arrays that step S201 is obtained bonding respectively are fixed on separately heat sink, constitute a plurality of EML linear array bars.Each EML linear array bar that is constituted has identical luminescence unit quantity, and being bonded to heat sink purpose is for convenience in heat radiation.
Step S203, with the stacked accumulation that (is generally 1.6mm) at certain intervals of a plurality of EML linear array bars and be fixed on same big heat sink on, form with the luminous EML face battle array of two-dimensional array form.
Step S204, the semiconductor optical amplifier (SOA) of arranging with the face battle array on the output of EML face battle array is integrated, each luminescence unit of described EML face battle array are subjected to a corresponding with it SOA unit its output light are carried out the linear power amplification.
Step S205 settles beam collimation and correcting device in the output of EML face battle array through the output after the light amplification.Generally can adopt microlens array that light beam is collimated,, can design the angle of visual field that external optical system is proofreaied and correct light beam at last so that the bright dipping of each luminescence unit has the roughly the same angle of divergence.
The high power laser light output device of the wide-band modulation of one embodiment of the invention can realize surpassing 50 the stacked serial connection of EML linear array bar, and each EML linear array bar can have tens of extremely hundreds of luminescence units, can select the quantity and the length of suitable EML linear array bar like this according to demand, consider the amplification of SOA again, the peak power of the modulated light source of the face battle array of formation can more easily reach more than the 10w.
Because each luminescence unit is with " non-phase-locked " form emission laser, such result is that each luminescence unit initial phase is mixed and disorderly, mutual superposition between the light field of a large amount of luminescence units, show as the output characteristic of approximate uniform incoherent light source, process collimation and correction back form approximate uniform optical illumination in the far field, avoided the Gaussian characteristics (non-homogeneous) of the distribution of light intensity distribution of single point light source.Utilize this kind incoherent light source can avoid the problem of the image space resolving power difference of coherent light illumination imaging, be more suitable in the laser Active Imaging.
Include a plurality of EAM unit in embodiments of the present invention.The EAM unit is the device that utilizes the electric absorption effect realization intensity modulation of semi-conducting material, is generally Multiple Quantum Well or strained quantum well electro-absorption modulation unit.Because the material of EAM is consistent with the material of the semiconductor laser of this application band, on manufacturing process, also has compatibility, therefore, can realize more easily that with present technology the monolithic of semiconductor laser unit 11 and EAM unit 12 is integrated, constitute the EML cellular construction.
The structural representation of the EML unit that provides according to one embodiment of the invention is provided Fig. 3.As shown in Figure 1, an EAM unit 12 is integrated in the output of corresponding semiconductor laser unit 11, constitutes EML unit 10.At present, the EAM performance of quantum well structure is more outstanding, all is to adopt Multiple Quantum Well or strained quantum well on the general structure.EML is the EAM unit that grows on same epitaxial loayer 12 and the monolithic integrated device of distributed feedback type semiconductor laser, and Fig. 3 promptly is that a typical case is by the EML structure of DFB-LD as the source.EML unit 10 is arranged in one-dimensional array, on substrate 15, generates long EML linear array bar 20, as shown in Figure 4.
Between semiconductor laser unit 11 and EAM unit 12, be provided with isolation channel 14, on the exiting surface of EML linear array bar 20, have a plurality of luminescence units 13,13 hundreds of apart microns of each luminescence unit.Luminescence unit 13 is corresponding with semiconductor laser unit 11 and EAM unit 12, also is to comprise corresponding semiconductor laser unit 11 and EAM unit 12 in the luminescence unit 13.Each EML linear array bar 20 is fixed, for example each EML linear array bar 20 is bonded on heat sink (heat sink).
With each EML linear array bar 20 with certain interval, for example with the interval about 1.6mm, stacked assembling, be bonded to then on same big heat sink 23, promptly constitute two-dimentional stacked array structure shown in Figure 5, also promptly constitute EML face battle array 30 as shown in Figure 6, the Electroabsorption Modulated Laser face battle array schematic diagram of Fig. 6 for providing according to the embodiment of the invention only exemplarily illustrates 4 * 4 battle array modulated light sources among the figure.Cooling device 24 can be installed in inside big heat sink 23, and cooling device (as water-cooled) initiatively particularly is to the device cooling of dispelling the heat.Also can consider to adopt little channel structure to increase area of dissipation.Certainly big heat sink 23 also can replace with any device that other can dispel the heat.Can between EML linear array bar 20, insulation board 22 be set,, need carry out electricity and completely cut off because on the EML linear array bar 20 electrode is arranged all.
The structural representation of the small integrated high power external modulation light supply apparatus that provides according to the embodiment of the invention is provided Fig. 7.Light output end place in the EML of light supply apparatus 100 face battle array 30 can settle microlens array 17, makes the bright dipping of each luminescence unit 13 have the roughly the same angle of divergence, can utilize the angle of visual field of external optical system correct transmission light at last.Except having roughly the same beam divergence angle, each luminescence unit 13 is not needing to keep consistency such as aspects such as radiant power, initial phases, and this makes that realization is many easily.For improving the transmitting power of modulated laser source,,, under the situation of the laser of exporting equal-wattage, can suitably reduce the quantity of stacked EML linear array bar 20 like this to improve the power output of single luminescence unit 13 at the integrated SOA 16 of the output of EML face battle array 30.EML face battle array 30 size after encapsulating can only be several cm, and the beam modulation characteristic is better than direct modulation, is a kind of miniaturization, integrated high power, high-quality modulated light source device.
Certainly; the present invention also can have other execution modes; under the situation that does not deviate from spirit of the present invention and essence thereof; the person of ordinary skill in the field works as can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection range of claim of the present invention.
Claims (7)
1. the method for a high power laser light output that obtains wide-band modulation comprises step:
Make a plurality of semiconductor laser LD unit send laser with non-phase-locked form, incide with corresponding a plurality of electro-absorption modulation EAM unit, described LD unit in;
The broadband RF modulation signals parallel connection is loaded on described each EAM unit, and the output light to described each LD unit carries out intensity modulation respectively;
Use a plurality of Optical Amplifier Units respectively the laser after each modulation to be carried out linear amplification;
Laser is exported with face formation formula in a plurality of amplification modulated luminescences unit that above-mentioned a plurality of LD unit, EAM unit and Optical Amplifier Unit are formed;
Output beam is collimated and proofreaies and correct.
2. the constructive method of the wide-band modulation high power laser sources device of a small integrated comprises step:
A plurality of electro-absorption modulation EAM unit and a plurality of semiconductor laser LD unit are integrated in respectively on the same substrate, constitute a plurality of electro-absorption modulation laser EML linear arrays;
Respectively described a plurality of EML linear arrays are bonded to heat sink on, constitute a plurality of EML linear array bars;
With the stacked at certain intervals accumulation of a plurality of described EML linear array bar be fixed on same big heat sink on, form the EML face battle array of two-dimensional array form;
Semiconductor optical amplifier in the integrated corresponding face battle array arrangement of the output of described EML face battle array;
Output in EML face battle array is placed beam collimation and correcting device through the output after the light amplification.
3. constructive method according to claim 2 is characterized in that: above-mentioned the stacked at certain intervals accumulation of a plurality of described EML linear array bar is fixed in the same big step on heat sink, described certain intervals is 1.6mm.
4. small integrated high power external modulation light supply apparatus is characterized in that comprising:
A plurality of semiconductor laser LD unit, a plurality of electro-absorption modulation EAM unit and a plurality of Optical Amplifier Unit,
Wherein, a plurality of described LD unit and a plurality of described EAM unit are integrated in forms electro-absorption modulation laser EML linear array on the same substrate, and a plurality of described EML linear arrays stack the long-pending fixing EML of composition face battle array with certain wall;
Described a plurality of Optical Amplifier Unit is integrated in the output of described EML face battle array.
5. small integrated high power external modulation light supply apparatus according to claim 4 is characterized in that, also comprises:
Beam collimation and correcting device, it is arranged between described EML face battle array and the described a plurality of Optical Amplifier Unit.
6. according to claim 4 or 5 described small integrated high power external modulation light supply apparatuses, it is characterized in that:
Described LD unit is a distributed feedback type semiconductor laser.
7. small integrated high power external modulation light supply apparatus according to claim 5 is characterized in that:
Described beam collimation and correcting device are microlens array.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102593712A (en) * | 2010-12-28 | 2012-07-18 | 三菱电机株式会社 | Uncooled optical semiconductor device |
| CN107910749A (en) * | 2017-11-20 | 2018-04-13 | 烽火通信科技股份有限公司 | Gain modulation semiconductor laser apparatus and laser intensity modulator approach without chirp |
| WO2018068200A1 (en) * | 2016-10-11 | 2018-04-19 | 华为技术有限公司 | Structure of novel electro-absorption modulated laser (eml) and chirp modulation method |
| CN108020656A (en) * | 2016-11-04 | 2018-05-11 | 中国科学院国家空间科学中心 | A kind of device and method for measuring rice embryo and being irradiated by heavy ion radiation |
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| US10284295B2 (en) | 2016-10-21 | 2019-05-07 | Industrial Technology Research Institute | Radio over fiber network node, radio access point, and communication system |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1467889A (en) * | 2002-07-11 | 2004-01-14 | 中国科学院半导体研究所 | Semiconductor optical amplifier, electric absorbing modulator integrated device in the same source region |
| CN1272885C (en) * | 2003-05-01 | 2006-08-30 | 清华大学 | Distributed feedback semiconductor laser and electric absorption modulator integrated light source and mfg. method |
| CN100520554C (en) * | 2007-09-29 | 2009-07-29 | 清华大学 | Crossing polarization modulation type full light wavelength converter |
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- 2009-03-26 CN CN200910119749A patent/CN101847829B/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102593712A (en) * | 2010-12-28 | 2012-07-18 | 三菱电机株式会社 | Uncooled optical semiconductor device |
| CN102593712B (en) * | 2010-12-28 | 2014-08-13 | 三菱电机株式会社 | Uncooled optical semiconductor device |
| WO2018068200A1 (en) * | 2016-10-11 | 2018-04-19 | 华为技术有限公司 | Structure of novel electro-absorption modulated laser (eml) and chirp modulation method |
| CN108020656A (en) * | 2016-11-04 | 2018-05-11 | 中国科学院国家空间科学中心 | A kind of device and method for measuring rice embryo and being irradiated by heavy ion radiation |
| CN108020656B (en) * | 2016-11-04 | 2019-07-09 | 中国科学院国家空间科学中心 | A kind of device and method that measurement rice embryo is irradiated by heavy ion radiation |
| CN107910749A (en) * | 2017-11-20 | 2018-04-13 | 烽火通信科技股份有限公司 | Gain modulation semiconductor laser apparatus and laser intensity modulator approach without chirp |
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