CN101833915B - Display device, its driving method and use the electronic equipment of this display device - Google Patents
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- CN101833915B CN101833915B CN200910258614.9A CN200910258614A CN101833915B CN 101833915 B CN101833915 B CN 101833915B CN 200910258614 A CN200910258614 A CN 200910258614A CN 101833915 B CN101833915 B CN 101833915B
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- 229910021341 titanium silicide Inorganic materials 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
Abstract
One of problem of the present invention is that reducing the brightness of light-emitting component because of the voltage deviation caused by the routing resistance of electric current supplying wire produces the uneven and situation of display quality reduction, thus realizes the raising of display quality.During voltage procedures, the first wiring being supplied to the first current potential for driving the terminal of the source electrode of the transistor of EL element to be electrically connected to will be become, and during luminescence, the terminal becoming the source electrode driving transistor is electrically connected to be supplied to the second wiring of the second current potential, can not be kept the voltage driven between gate terminal and the source terminal of transistor with being affected by the voltage deviation caused by the routing resistance of electric current supplying wire.
Description
Technical field
The present invention relates to a kind of semiconductor device, display device, light-emitting device or semiconductor device, display device, luminescence
The driving method of device.Or, the present invention relates to a kind of possess this semiconductor device, display device, the electronics of light-emitting device set
Standby.
Background technology
Display device is for the various electronic products of mobile phone, radiotelevisor etc..As for display device
Display element, from contrast, for the response of input signal and viewing angle characteristic in terms of from the point of view of, EL element (comprises Organic substance
And the EL element of inorganic matter, organic EL element, inorganic EL devices) etc. light-emitting component before realizing more having on high image quality
On the way, therefore research and development for this kind of light-emitting component are burning the hotest.Additionally, as possessing the display device of EL element (below,
It is referred to as EL display device), the research and development for the giant-screen of display device are burning the hotest.
In EL display device, EL element drives according to the magnitude of current produced in the component.Therefore, it is arranged on display part
Each pixel in the pixel portion of viewing area is connected with the wiring being used for supplying electric current.It is used for supplying the wiring of electric current by outside viewing area
The wiring composition that portion is extended.It addition, each pixel in pixel portion is configured with the electric current for controlling to be supplied in EL element
The TFT (thin film transistor (TFT)) of element.
, polysilicon (hereinafter, also referred to as p-Si) field-effect mobility of the TFT formed ratio is by non-crystalline silicon (below,
Also referred to as a-Si) field-effect mobility of TFT that formed is high, and its good electric performance, so as EL display device
TFT is more suitable.But, p-Si the TFT formed has the electricity easily producing threshold voltage etc. because of the defect of the key in crystal boundary special
The uneven problem of property.Therefore, it is disclosed directly below structure: i.e. have for compensating threshold in the pixel of the TFT formed by p-Si
The uneven circuit (with reference to patent documentation 1 to patent documentation 3) of threshold voltage.
The open 2003-202834 publication of [patent documentation 1] Japanese patent application
The open 2003-223138 publication of [patent documentation 2] Japanese patent application
The open 2005-338792 publication of [patent documentation 3] Japanese patent application
As the period of the driving pixel in patent documentation 1 to patent documentation 3, substantially divide into and make for compensating transistor
The circuit of threshold voltage keep threshold voltage and the period (during voltage procedures) of video voltage and make EL element
Luminous period (during luminescence).Following problem is had in the dot structure of patent documentation 1 to patent documentation 3: when
During voltage procedures, when flowing through the electric current that the current ratio in each pixel flows through in the wiring for supplying electric current, because being used for
Supply the routing resistance of the wiring of electric current and produce voltage and reduce, and the voltage being used for supplying the wiring of electric current produces deviation.Or
Person also has following problem: cause the inequality of the brightness of light-emitting component because being used for supplying the voltage generation deviation of the wiring of electric current
Even, the reduction of display quality.
Or, have following problem: the wiring being used for supplying electric current along with the maximization of display device is elongated, and voltage is subject to
It is used for supplying the impact of the routing resistance of the wiring of electric current and reducing and produce deviation for supplying the voltage of the wiring of electric current.
Or, have a following problem: even if providing that realizing maximizes and the most do not reduce display quality carrying out to clearly indicate
Display device.
Or, have following problem: provide and big electric current can be made to flow through in each pixel and carry out the display dress of high brightness
Put.
Or, have a following problem: reduce following situation, i.e. because of caused by the routing resistance of the wiring being used for supplying electric current
Voltage deviation and make the brightness flop of light-emitting component, therefore display quality reduce.
Summary of the invention
In a mode of the present invention, during voltage procedures in by become transistor for driving EL element (under
Face, also referred to as drives transistor) the terminal of source electrode be electrically connected to be supplied to the first wiring of the first current potential, and during luminescence
Middle the second wiring that the terminal becoming the source electrode driving transistor is electrically connected to be supplied to the second current potential, can not be used for
The impact ground of the voltage deviation caused by routing resistance of the wiring of supply electric current keeps the gate terminal and the source that drive transistor
Voltage between extreme son.
An exemplary mode of the present invention is a kind of display device, is provided with pixel, and this pixel includes: crystal
Pipe；It is electrically connected to the first terminal of transistor, the second terminal and gate terminal and for remaining applied to the gate terminal of transistor
Threshold voltage between son and source terminal and the correcting circuit of video voltage；It is electrically connected to correcting circuit and according to being applied to crystalline substance
Threshold voltage and video voltage between gate terminal and the source terminal of body pipe control luminous light-emitting component；It is electrically connected to crystalline substance
The first terminal the control of body pipe switch with the first of the first electrical connection connected up being supplied to the first current potential；And be electrically connected to
The first terminal of transistor also controls the second switch of electrical connection with the second wiring being supplied to the second current potential.
Additionally, an exemplary mode of the present invention is the driving method of a kind of display device, this display device includes: brilliant
Body pipe；It is electrically connected to the first terminal of transistor, the second terminal and gate terminal and for being applied to the gate terminal of transistor
Son and source terminal between threshold voltage and from holding wire by select switch supply video voltage be maintained at capacity cell
Correcting circuit；It is electrically connected to correcting circuit and according to the threshold value electricity being applied between the gate terminal of transistor and source terminal
Pressure and video voltage control luminous light-emitting component；It is electrically connected to the first terminal of transistor and controls and be supplied to the first current potential
First wiring electrical connection first switch；And be electrically connected to the first terminal of transistor and control and be supplied to the second electricity
The second switch of electrical connection of the second wiring of position, wherein, during voltage procedures in make the first switch conduction and make second to open
Close cut-off, make transistor turns that capacity cell to be charged, then by making capacity cell discharge, make capacity cell keep
Threshold voltage, utilize select switch supplying video voltage, and, during luminescence in, make the first switch end and make second to open
Close conducting, to carry out the luminescence of light-emitting component.
Drive in the display device of each pixel during utilizing voltage procedures and during luminescence, it is possible to reduce be used for supplying electricity
The picture quality of the impact of luminance fluctuation of the light-emitting component caused by routing resistance of wiring of stream, brightness inclination etc. is bad.
Or, it is possible to reduce following situation: the wiring being used for supplying electric current along with the maximization of display device is elongated, and voltage is subject to
It is used for supplying the impact of the routing resistance of the wiring of electric current.Or, it is provided that the most do not reduce display matter even if realizing maximizing
Measure and carry out the display device clearly indicated.Or, it is provided that big electric current can be made to flow through in each pixel and carry out highlighted
The display device of degreeization.Or, it is possible to reduce following situation: because of the electricity caused by the routing resistance for the wiring supplying electric current
Deviation is pressed to make the brightness flop of light-emitting component and display quality reduce.
Accompanying drawing explanation
Fig. 1 is the figure that embodiment 1 is described；
Fig. 2 A and Fig. 2 B is the figure that embodiment 1 is described；
Fig. 3 A and Fig. 3 B is the figure that embodiment 1 is described；
Fig. 4 A and Fig. 4 B is the figure that embodiment 1 is described；
Fig. 5 A and Fig. 5 B is the figure that embodiment 1 is described；
Fig. 6 A and Fig. 6 B is the figure that embodiment 1 is described；
Fig. 7 A and Fig. 7 B is the figure that embodiment 1 is described；
Fig. 8 A and Fig. 8 B is the figure that embodiment 1 is described；
Fig. 9 A and Fig. 9 B is the figure that embodiment 1 is described；
Figure 10 A to Figure 10 D is the figure that embodiment 1 is described；
Figure 11 A to Figure 11 H is the figure manufacturing example that peripheral drive circuit is described；
Figure 12 A to Figure 12 G is the figure manufacturing example that semiconductor element is described；
Figure 13 A to Figure 13 D is the figure manufacturing example that semiconductor element is described；
Figure 14 A to Figure 14 G is the figure manufacturing example that semiconductor element is described；
Figure 15 A to Figure 15 H is the figure that electronic equipment is described；
Figure 16 A to Figure 16 H is the figure that electronic equipment is described.
Detailed description of the invention
Below, it is described with reference to embodiments of the present invention.But, the present invention can come real with multiple different modes
Executing, person of an ordinary skill in the technical field is it should be readily understood that a fact, it is simply that its mode and detailed content can
To be transformed to various form without deviating from spirit of the invention and scope thereof.Therefore, the present invention should not be explained
For being only limited in the content described in present embodiment.Additionally, in the accompanying drawing of this specification, use identical reference
Represent identical part or there is the part of identical function, and omitting its repeat specification.
Furthermore, the content (can also be part thereof of content) described in some embodiment is in this enforcement
Other content (can also be part thereof of content) described in mode and/or in other embodiments one or more
Described content (can also be part thereof of content) may be employed, combine or displacement etc..
Additionally, content described in embodiments refers to utilize various accompanying drawing to describe in various embodiments
Content or utilize the article described in description and the content that illustrates.
And, in the case of being expressly recited as odd number, preferably employ odd number, but the present invention be not limited to this, it is also possible to
Use plural number.With as this, in the case of being expressly recited as plural number, preferably employ plural number, but the present invention be not limited to this,
Odd number can also be used.
By its of combination accompanying drawing (can also be one part) described in some embodiment and this accompanying drawing
Its part, other accompanying drawing (can also be one part) described in this embodiment and/or one or more other
Accompanying drawing (can also be one part) described in embodiment, may be constructed more accompanying drawing.
In the accompanying drawings, for the sake of clear, exaggerate size, the thickness of layer or region.Therefore, this chi it is not limited to
Degree.
Furthermore, accompanying drawing illustrates schematic ideal example, and is not limited to shape shown in the drawings or numerical value etc..Such as,
Can include that the caused shape such as manufacturing technology or error is uneven, caused signal, the voltage such as noise or timing offset
Or electric current is uneven etc..
And, specialized word is used for describing specific embodiment etc., and is not limited to this.
Undefined word (including the science and technology word such as specialized word or term) can represent and art
The meaning the most equivalent in meaning that technical staff is understood.The word preferred interpretation defined by dictionary etc. be not with relevant technology
Background produces the meaning of contradiction.
Furthermore, the word of first, second, third, etc. is used for describing various factors, component, region, layer, field discriminatively.
Therefore, the number such as the word of first, second, third, etc. not limiting factor (s), component, region, layer, field.And, for example, it is possible to make
" first " is replaced with " second " or " the 3rd " etc..
Embodiment 1
First, just it is used for illustrating that the block diagram of the display device of the structure of present embodiment illustrates.
Fig. 1 illustrates gate line side drive circuit 101 that display device 100 had and signal line side drive circuit 102, aobvious
Show portion 103, the structure of power circuit 104.In display part 103, multiple pixels 105 are configured to rectangular.Additionally, in FIG
Signal generating circuit 151 for generating the signal being input to display device is shown.
In FIG, scanning signal is supplied to multiple wiring 106 by gate line side drive circuit 101.Believe according to this scanning
Number, the pixel 105 often gone is decided to be selection state or nonselection mode.Additionally, signal line side drive circuit 102 is by video
Voltage (also referred to as video signal, video data) is supplied to by the circuit of the pixel 105 scanning signal behavior from wiring 107.Separately
Outward, power circuit 104 is used to generate the circuit of following current potential: be supplied to be connected to the wiring 108 of multiple pixel 105 (also referred to as
Be the first wiring) the first current potential and being supplied to connect up the second current potential of 109 (the also referred to as second wirings).
Wiring 106 can serve as the grid wiring for scanning signal is supplied to each row.Wiring 107 can serve as
Source wiring by video voltage supplying to each pixel.Wiring 108 can serve as the first current potential is supplied to pixel 105
First electric current supplying wire.Wiring 109 can serve as the second electric current supplying wire for the second current potential is supplied to pixel 105.
In FIG, according to the quantity of the pixel on line direction and column direction illustrate wiring 106, wiring 107, wiring 108 and
Wiring 109.It addition, wiring 106, wiring 107, wiring 108 and wiring 109 can also according to the sub-pixel constituted in pixel (also
Be referred to as secondary pixel) quantity or pixel in the quantity of transistor increase wiring 106, wiring 107, wiring 108 and wiring 109 with
The quantity that pixel 105 connects.Additionally, drive by having wiring 106, wiring 107, wiring 108 and wiring 109 between the pixels
Dynamic pixel 105, can reduce the quantity that wiring 106, wiring 107, wiring 108 and wiring 109 are connected with pixel 105.
In FIG, will enter into gate line side drive circuit 101, signal line side drive circuit 102 and power circuit 104
Signal be shown as from flexible printed board 110 (FlexiblePrinted Circuit；FPC) signal inputted.It addition,
In Fig. 1, it would however also be possible to employ following structure, i.e. gate line side drive circuit 101, signal line side drive circuit 102 and power circuit
In 104, any one is arranged on substrate same with display part 103.In addition it is also possible to use only display part 103 to be arranged on lining
Structure at the end.As an example, gate line side drive circuit 101 and signal line side drive circuit 102 are formed at and display part
On 103 same substrates, and will be used for generating the power circuit 104 of the first current potential and the second current potential and be formed at the setting of outside of substrate
It is equipped with on the printed substrate (Printed Wiring Board:PWB) of control circuit.It addition, be fed into connecting up 108 and cloth
First current potential of line 109 and the second current potential are externally supplied by flexible printed board 110 can reduce power circuit 104,
Such that it is able to realize the miniaturization of display device 100.
Additionally, signal generating circuit 151 has following function, i.e. according to image signal 152, signal or voltage etc. are passed through
Flexible printed board 110 output is to each circuit of display device 100, and can serve as controller, control circuit, timing generation
Device or actuator etc..
Following signal is exported display device 100 by signal generating circuit 151, as an example of this signal, can enumerate:
Signal line side drive circuit initial signal (SSP), signal line side drive circuit clock signal (SCK), signal line side drive
Circuit inverting clock signal (SCKB), video voltage data (DATA), latch-up signal (LAT), gate line side drive circuit
Believe with initial signal (GSP), gate line side drive circuit clock signal (GCK) and gate line side drive circuit inversion clock
Number (GCKB) etc..Additionally, be input to the signal of the constant voltage of the circuit of power circuit 104 grade of display device 100.Display dress
The gate line side drive circuit 101 put and signal line side drive circuit 102, power circuit 104 can be according to these signals aobvious
Show in portion 103 and show.
In the display part 103 of Fig. 1, as described above, multiple pixels 105 are configured to rectangular (being configured to bar shaped).
Pixel 105 is not necessarily required to be configured to rectangular, it is also possible to pixel 105 is configured to triangle or in Baeyer (Bayer) mode
Configuration.As the display mode in display part 103, it is possible to use enter grade mode or staggered mode.Will by the staggered mode of employing
Signal is supplied to multiple pixel and shows, can reduce driving frequency and realize low power consumption quantization.When carrying out colored display
The color elements that Shi Liyong pixel controls is not limited to three colors of RGB (R is red, and G is green, and B is blue), and also may be used
To use its above color, such as, RGBW (W is white) or RGB can also be added the one of yellow, aeruginous, aubergine etc.
Individual above color.The size of the viewing area of the point of each color elements can also be different.Thus, it is possible to realize low power consumption
Quantify or extend the service life of display element.
Additionally, the situation describing " A and B connection " clearly includes that following situation: A and B electrically connects；A and B functionally connects
Connect；And A and B is directly connected to.Here, with A and B as object (such as, device, element, circuit, wiring, electrode, terminal, conduction
Film, layer etc.).Therefore, also include the annexation in addition to the annexation shown in accompanying drawing or article, and be not limited to make a reservation for
Annexation annexation as shown in accompanying drawing or article.
Such as, in the case of A and B electrically connects, it is also possible to connect to have between A and B and more than one can electrically connect A
Element (such as switch, transistor, capacity cell, inducer, resistive element, diode etc.) with B.Or, in A and B function
Property ground connect in the case of, it is also possible between A and B connect have the more than one circuit that can be functionally connected A and B
(such as, logic circuit (phase inverter, NAND circuit, NOR circuit etc.), signaling conversion circuit (DA change-over circuit, A/D convertor circuit,
Checking gamma circuit etc.), potential level change-over circuit (power circuit (booster circuit, reduction voltage circuit etc.), change signal current potential electricity
Flat level shift circuit etc.), voltage source, current source, switching circuit, amplifying circuit (signal amplitude or the magnitude of current can be increased
Deng circuit, operational amplifier, differential amplifier circuit, source follower, buffer circuit etc.), signal generating circuit, storage electricity
Road, control circuit etc.).Such as, in the case of the signal exported from A is sent to B, even if accompanying other electricity between A and B
Road, also is considered as being functionally connected by A and B.
Additionally, when describing " A and B electrical connection " clearly, including following situation: A and B electrical connection (it is to say, A and B
Connect and accompany other element or other circuit therebetween)；A and B is functionally connected (it is to say, A and B is functionally
Connect and accompany other circuit therebetween)；And A and B be directly connected to (that is, A and B connect and its in the middle of do not accompany it
Its element or other circuit).It is to say, describe the situation of " electrical connection " and the situation the most only describing " connection " clearly
Identical.
Additionally, display device refers to have, that contrast, brightness, reflectance, absorbance etc. change because of electromagnetic action is aobvious
Show that device such as EL (electroluminescent) element of element (comprises Organic substance and the EL element of inorganic matter, organic EL element, inorganic EL unit
Part), LED (White LED, red LED, green LED, blue led etc.), transistor (according to the transistor of galvanoluminescence), electronics
Radiated element, liquid crystal cell, electric ink, electrophoresis element, grating valve (GLV), plasm display panel (PDP), numeral
Micro-mirror device (DMD), piezoelectric ceramics display, CNT etc..Display device can also include comprising the aobvious of light-emitting component etc.
Show multiple pixels of element.Display device can include the peripheral drive circuit driving multiple pixel.Drive outside multiple pixel
Enclose drive circuit can also be formed on substrate same with multiple pixels.Display device can also include by wire bonding or convex
Play (bump) etc. and the peripheral drive circuit being arranged on substrate, the so-called IC core connected by glass top chip (COG)
Sheet or the IC chip connected by TAB etc..Display device can also include being provided with IC chip, resistive element, electric capacity unit
The flexible printed board (FPC) of part, inducer, transistor etc..Display device can also be passed through flexible printed board (FPC) etc. and connect
Connect, and include the printed substrate (PWB) being provided with IC chip, resistive element, capacity cell, inducer, transistor etc..Display
Device can also include the optical sheet of polaroid or phase difference film etc..Display device can also include illuminator, shell, sound
Input/output device, optical sensor etc..
Additionally, the transistor being had as pixel 105 and drive circuit, it is possible to use the transistor of various forms.Cause
This, the kind of the transistor for being used does not limits.It is, for example possible to use have with non-crystalline silicon, polysilicon or crystallite (also
The most nanocrystalline, semi-amorphous (semi-amorphous)) silicon etc. be representative the thin film transistor (TFT) (TFT) of non-single crystal semiconductor film
Deng.In the case of using TFT, there is various advantage.Such as, because can than use monocrystal silicon time low at a temperature of manufacture
TFT, therefore can realize reduction or the maximization of the equipment of manufacture of manufacturing cost.Owing to manufacture equipment can be expanded, so can
To manufacture in large-sized substrate.Consequently, because multiple display device can be manufactured simultaneously, it is possible to low cost manufacture.Again
Person, low owing to manufacturing temperature, therefore can use low heat resistant substrate.Thus, it is possible to manufacture on the substrate have light transmission
Transistor.And it is possible to by using the transistor on the substrate with light transmission to control the light transmission in display element.
Or, because the film thickness of transistor is relatively thin, so the part constituting the film of transistor is transmissive to light.Therefore, it can carry
High aperture.
It addition, when manufacturing polysilicon, crystallinity can be improved further by using catalyst (nickel etc.) such that it is able to
Manufacture the transistor that electrical characteristics are good.As a result, it is possible to form gate driver circuit on substrate, (scan line is driven
Galvanic electricity road) or source driver circuit (signal-line driving circuit) and signal processing circuit (signal generating circuit, γ correct
Circuit, DA change-over circuit etc.).
It addition, when manufacturing microcrystal silicon, crystallinity can be improved further by using catalyst (nickel etc.) such that it is able to
Manufacture the transistor that electrical characteristics are good.Now, only laser irradiation is not carried out by carrying out heat treatment, it is possible to improve crystallization
Property.As a result, it is possible to form a part (analog switch etc.) and the grid of source driver circuit on substrate
Drive circuit (scan line drive circuit).Furthermore, when not carrying out laser in order to realize crystallization and irradiating, silicon can be suppressed to tie
Crystalline substance uneven.Therefore, it can show the image that improve picture quality.
Furthermore it is possible to manufacture polysilicon or microcrystal silicon and do not use catalyst (nickel etc.).
Although it addition, preferably the silicon crystallinity that panel is overall is risen to polycrystalline or crystallite etc., but being not limited to this.Can also
In a part of region of panel, only improve silicon crystallinity.By optionally irradiating laser etc., can optionally improve knot
Crystalline substance.For example, it is also possible to only to the peripheral circuit region irradiating laser as the region in addition to pixel.Or, it is also possible to only
Area illumination laser to gate driver circuit, source driver circuit etc..Or, it is also possible to only to source driver circuit
The area illumination laser of a part (such as, analog switch).As a result, it is possible to only needing to make the district of circuit high speed operation
Territory is improved the crystallinity of silicon.Owing to need not make pixel region high speed operation, even if so not improving crystallinity, it is possible to so that
Image element circuit works and problem does not occur.Less the most much of that, so manufacture work can also be shortened owing to improving crystalline region
Sequence, and treating capacity can be improved and reduce manufacturing cost.Owing to the required negligible amounts manufacturing device just can be made
Make, it is possible to reduce manufacturing cost.
Or, it is possible to use Semiconductor substrate or SOI substrate etc. form transistor.Thus, it is possible to manufacturing characteristics, size
Or the transistor that the inhomogeneities such as shape is low, electric current supply capacity high and size is little.If using these transistors, then can seek
Ask the low power consumption quantization of circuit or the highly integrated of circuit.
Or, it is possible to use there is the compound semiconductor of ZnO, a-InGaZnO, SiGe, GaAs, IZO, ITO, SnO etc.
The transistor of oxide semiconductor or the thin film after these compound semiconductors or oxide semiconductor are carried out filming brilliant
Body pipe etc..Manufacture temperature thus, it is possible to reduce, such as, can at room temperature manufacture transistor.As a result, it is possible to low heat-resisting
Property substrate, directly form transistor as in plastic or film-substrate.Additionally, these compound semiconductors or oxide are partly led
Body can be not only used for the raceway groove part of transistor, but also can serve as other purposes.Such as, these compound semiconductors or
Oxide semiconductor can serve as resistive element, pixel electrode, has the electrode of light transmission.Furthermore, due to can be with transistor
Carry out their film forming or formation, it is possible to reduce cost simultaneously.
Or, it is possible to use the transistor etc. formed by ink-jet or print process.Thus, it is possible at room temperature manufacture；
With rough vacuum manufacture；Or manufacture in large-sized substrate.Even if owing to not using mask (reticle mask) that crystal can also be manufactured
Pipe, it is possible to easily vary the layout of transistor.Furthermore, owing to need not use resist, it is possible to reduce material
Take, and reduce operation quantity.Further, because only forming film in the part needed, so being formed after film with on whole
The manufacture method being etched is compared, and can not waste material and realize low cost.
Or, it is possible to use there is the transistor etc. of organic semiconductor or CNT.Thus, it is possible to can bend
Transistor is formed on substrate.Therefore, it is possible to strengthen the resistance to impact of the semiconductor device using this substrate to manufacture.
Furthermore, it is possible to use the transistor of various structures.For example, it is possible to by MOS type transistor, junction transistor, bipolar
Transistors etc. are as transistor.By using MOS type transistor, it is possible to reduce transistor size.Therefore, it can multiple crystalline substance is installed
Body pipe.By using bipolar transistor, big electric current can be made to flow through.Therefore, it can make circuit high speed operation.
In addition it is also possible to the mixing such as MOS type transistor, bipolar transistor are formed on one substrate.Thus, it is possible to
Realize low power consumption, miniaturization, high speed operation etc..
In addition to the foregoing, it is also possible to use various transistor.
Further, it is possible to use various substrates form transistor.Kind for substrate has no particular limits.As this lining
The end, such as, can use at the bottom of single crystalline substrate, SOI substrate, glass substrate, quartz substrate, plastic, stainless steel lining, have not
The substrate etc. of rust steel foil.Or, it is possible to use certain substrate forms transistor, and then transistor is transposed to another substrate
On, thus on another substrate, configure transistor.The substrate being transposed as transistor, it is possible to use single crystalline substrate, SOI serve as a contrast
The end, glass substrate, quartz substrate, plastic, paper substrates, cellophane substrate, stone material substrate, timber substrate, cloth substrate (include
Natural fiber (silk, cotton, fiber crops), synthetic fibers (nylon, polyurethane, polyester) or regenerated fiber (acetate fiber, CUP,
Artificial silk, recycled polyester) etc.), leather substrate, rubber substrate, at the bottom of stainless steel lining, there is the substrate etc. of stainless steel foil.Or, also
The animal skin (epidermis, corium) of employment etc. or subcutaneous tissue can be made as substrate.Or, it is possible to use certain substrate shape
Become transistor, and polish this substrate so that it is thinning.As the substrate being polished, it is possible to use single crystalline substrate, SOI substrate,
At the bottom of glass substrate, quartz substrate, plastic, stainless steel lining, there is the substrate etc. of stainless steel foil.By using these substrates,
It is achieved that the formation of the good transistor of characteristic；The formation of the transistor of low power consumption；It is not easy the system of the device being destroyed
Make；Give thermostability；Lightweight or slimming.
Additionally, as transistor, various structure can be used to be not limited to specific structure.For example, it is possible to answer apparatus
There is the multi-grid structure of plural gate electrode.If owing to using multi-grid structure, then channel region is connected in series, so energy
Enough realize the structure that multiple transistor is connected in series.By using multi-grid structure, cut-off current can be reduced, and can improve
The resistance to pressure (raising reliability) of transistor.Or, by utilizing multi-grid structure, when working in saturation region, though leakage
Change in voltage between pole-source electrode, between Drain-Source, the change of electric current is the biggest, such that it is able to make the oblique of voltage-current characteristic
Rate is stable.If, with the voltage-current characteristic that slope is stable, then can realize preferable current source circuit or resistance value very
High active load.As a result, it is possible to realize the good differential circuit of characteristic or current mirror circuit.
As other example, the structure being configured with gate electrode at raceway groove up and down can be used.Because by using at ditch
Road is configured with the structure of gate electrode up and down, can increase channel region, it is possible to realize increasing current value.It addition, by using
It is configured with the structure of gate electrode at raceway groove up and down, easily produces depletion layer, therefore can realize the improvement of S value.By using
Raceway groove is configured with the structure of gate electrode up and down such that it is able to obtain the structure of multiple coupled in parallel.
Can also use by gate electrode configuration structure over the channel region, structure gate electrode being arranged under channel region,
Positive cross structure, reverse stagger structure, channel region is divided into the structure in multiple region, the structure being connected in parallel channel region or ditch
The structure that road district is connected in series.Moreover, it is also possible to the knot that employing channel region (or one part) is overlapping with source electrode or drain electrode
Structure.By the structure that employing channel region (or one part) is overlapping with source electrode or drain electrode, it is possible to prevent because accumulation exists
The part of channel region and make job insecurity.Or, the structure that LDD region is set can be applied.By arranging LDD region, permissible
Realize the raising (raising of reliability) of the reduction of cut-off current or the resistance to pressure of transistor.Or, by arranging LDD region,
Following characteristic can be obtained, i.e. when working in saturation region, even if the change in voltage between Drain-Source, Drain-Source it
Between the change of electric current the biggest, such that it is able to make the slope of voltage-current characteristic stable.
It addition, as transistor, various type can be used, such that it is able to use various substrate to be formed.Therefore,
Realize all circuit required for predetermined function can be formed on the same substrate.Such as, it is achieved the institute required for predetermined function
There is circuit can also use various substrate, as glass substrate, plastic, single crystalline substrate or SOI substrate etc. are formed.By by real
All circuit required for existing predetermined function use same substrate to be formed, and can reduce cost by reducing parts number,
Maybe can improve reliability by reducing the connection number between circuit parts.Or, it is also possible to predetermined merit will be realized
A part for circuit required for energy is formed on certain substrate, and realizes another part shape of the circuit required for predetermined function
Become on another substrate.In other words, it is achieved all circuit required for predetermined function can also be not formed in same substrate
On.For example, it is also possible to utilize transistor a part for the circuit realized required for predetermined function to be formed on a glass substrate, and
Another part of circuit required for realizing predetermined function is formed in single crystalline substrate, and by COG (Chip On Glass:
Glass top chip) the IC chip being made up of the transistor using single crystalline substrate to be formed is connected to glass substrate, thus at glass
This IC chip is configured on substrate.Or, it is possible to use TAB (TapeAutomated Bonding: tape automated bonds) or print
Printed circuit board makes this IC chip and glass substrate connect.Like this, by a part for circuit is formed on the same substrate, can
To reduce cost by minimizing parts number, maybe can carry by reducing the junction point number between circuit parts
High reliability.Further, since the power consumption of the circuit of the high part of driving voltage and the high part of driving frequency is high, the most will
The circuit of this part is formed on the same substrate, if such as the circuit of this part is formed in single crystalline substrate, with use by
The IC chip that this circuit is constituted, then be prevented from the increase of power consumption.
Transistor refers to the element of at least three terminal of grid, drain electrode and source electrode, wherein in drain region and source region
Between there is channel region, and electric current can pass through drain region, channel region and source region flowing.Here, because source electrode and drain electrode
Changing due to the structure of transistor or working condition etc., being therefore difficult to which limits is source electrode or drain electrode.Therefore, the most will not
Region as source electrode and drain electrode is referred to as source electrode or drain electrode.In the case, as an example, sometimes they are designated as respectively first
Terminal and the second terminal.Or, sometimes they are designated as respectively the first electrode and the second electrode.Or, sometimes they are designated as
Firstth district and the secondth district.
It addition, transistor can also be the element at least with three terminals including base stage, emitter and collector.?
In the case of this, sometimes emitter and collector is designated as respectively the first terminal and the second terminal etc. the most as described above.
Furthermore, grid refers to gate electrode and grid wiring (also referred to as gate line, gate line, scan line, scanning
Holding wire etc.) entirety or refer to the part in these.Gate electrode refers to across gate insulating film and formation channel region
The conducting film of the overlapping part of quasiconductor.Additionally, a part for gate electrode is sometimes across gate insulating film and LDD
(LightlyDoped Drain；Lightly doped drain) district or source region (or drain region) be overlapping.Grid wiring refers to for connecting each crystalline substance
Wiring between the gate electrode of body pipe, it is used for connecting the wiring between the gate electrode that each pixel is had or for connecting grid electricity
Pole and the wiring of other wiring.
But, there is also as gate electrode and be used as grid wiring part (region, conducting film, wiring etc.).This
Partly (region, conducting film, wiring etc.) be properly termed as gate electrode or grid wiring.In other words, there is also and can not clearly distinguish
Gate electrode and the region of grid wiring.Such as, a part of overlapping situation of the grid wiring configured with extension at channel region
Under, this part (region, conducting film, wiring etc.) is not only used as grid wiring, also serves as gate electrode.Therefore, this part
(region, conducting film, wiring etc.) are properly termed as gate electrode or grid wiring.
It addition, use the material identical with gate electrode to be formed and form the island (island) identical with gate electrode and be connected
Part (region, conducting film, wiring etc.) be referred to as gate electrode.With as this, by the material shape identical with grid wiring
Become, and form the island identical with grid wiring and the part (region, conducting film, wiring etc.) that connects is referred to as grid cloth
Line.Strictly, the most this part (region, conducting film, wiring etc.) is the most overlapping with channel region, or, do not have and other
The function connected is realized between gate electrode.But, according to the relation such as specification when manufacturing, have by with gate electrode or grid wiring
Identical material formed and form the island identical with gate electrode or grid wiring and realize connection part (region, conducting film,
Wiring etc.).Therefore, this part (region, conducting film, wiring etc.) is referred to as gate electrode or grid wiring.
It addition, such as in multi-gated transistor, under many circumstances a gate electrode and other gate electrode by by
The conducting film that the material identical with gate electrode is formed realizes connecting.Because this part (region, conducting film, wiring etc.) is used to
Connect gate electrode and the part (region, conducting film, wiring etc.) of gate electrode, be therefore properly termed as grid wiring.But, due to also
Multi-gated transistor can be regarded a transistor as, so this part is referred to as gate electrode.In other words, by with gate electrode
Or the identical material of grid wiring is formed, and form the island identical with gate electrode or grid wiring and the part that connects (region, is led
Electrolemma, wiring etc.) it is referred to as gate electrode or grid wiring.And, such as, it is to connect gate electrode and the part of grid wiring
And the conducting film formed by the material different from gate electrode or grid wiring is referred to as gate electrode or grid wiring.
It addition, the gate terminal part (region, conducting film, wiring etc.) that refers to gate electrode or the portion that electrically connects with gate electrode
Divide the part in (region, conducting film, wiring etc.).
Furthermore, certain wiring is being referred to as grid wiring, gate line, gate line, scan line, scan signal line etc.
In the case of, this wiring is free of attachment to the grid of transistor sometimes.In the case, grid wiring, gate line, gate line,
Scan line, scan signal line likely refer to the wiring with the layer formation identical with the grid of transistor, by the grid with transistor
Wiring that the most identical material is formed or the wiring that the grid with transistor concurrently forms.As an example, holding electricity can be enumerated
Hold with wiring, power line, reference potential supply wiring etc..
Additionally, source electrode refer to source region, source electrode, source wiring (also referred to as source electrode line, source signal line, data wire,
Data signal line etc.) entirety or refer to the part in these.Source region refers to comprise a lot of p type impurity (boron or gallium etc.)
Or the semiconductor region of N-type impurity (phosphorus or arsenic etc.).Therefore, the region of p type impurity or N-type impurity is somewhat comprised, i.e. so-called
LDD(Lightly Doped Drain；Lightly doped drain) district is not included in source region.Source electrode refers to different from source region
The conductive layer of the part that material is formed and electrically connects with source region and configures.But, source electrode includes source region and referred to as source electricity sometimes
Pole.Source wiring refers to the wiring between the source electrode for connecting each transistor, for connecting the source electricity that each pixel is had
Wiring between pole or be used for connecting source electrode and the wiring of other wiring.
But, there is also the part (region, conducting film, wiring etc.) worked as source electrode and source wiring.This
Plant part (region, conducting film, wiring etc.) and be properly termed as source electrode or source wiring.In other words, there is also can not be clear and definite
Difference source electrode and the region of source wiring.Such as, a part of overlapping feelings of the source wiring configured with extension in source region
Under condition, this part (region, conducting film, wiring etc.) serves not only as source wiring and works, but also works as source electrode.
Therefore, this part (region, conducting film, wiring etc.) is properly termed as source electrode or source wiring.
It addition, the part being formed and being formed the island identical with source electrode by the material identical with source electrode and be connected (region,
Conducting film, wiring etc.) or connect the part (region, conducting film, wiring etc.) of source electrode and source electrode and be referred to as source electricity
Pole.Furthermore, the part overlapping with source region is referred to as source electrode.Identical with this, the material identical with source wiring formed
And form the island identical with source wiring and the region that connects is referred to as source wiring.Strictly, this part (region,
Conducting film, wiring etc.) the most not there is the function realizing being connected between other source electrode.But, because specification when manufacturing
Deng relation, there is the part being formed by the material identical with source electrode or source wiring and being connected with source electrode or source wiring
(region, conducting film, wiring etc.).Therefore, this kind of part (region, conducting film, wiring etc.) is referred to as source electrode or source electrode
Wiring.
It addition, for example, it is also possible to by be connect source electrode and the part of source wiring and by with source electrode or source wiring
The conducting film that different materials is formed is referred to as source electrode or source wiring.
Furthermore, source terminal refers to the part (region, conducting film, wiring etc.) that source region, source electrode electrically connect with source electrode
In a part.
It addition, certain wiring is being referred to as source wiring, source electrode line, source signal line, data wire, data signal line etc.
In the case of, this wiring is free of attachment to the source electrode (drain electrode) of transistor sometimes.In the case, source wiring, source electrode line, source electrode letter
Wiring that number line, data wire, data signal line are sometimes referred to be formed by the floor identical with the source electrode of transistor (drain electrode), by with crystalline substance
The wiring that the material that the source electrode (drain electrode) of body pipe is identical is formed or the wiring of source electrode (drain electrode) film forming simultaneously with transistor.Make
It is an example, holding capacitor wiring, power line, reference potential supply wiring etc. can be enumerated.
It addition, drain electrode is as source electrode.
It addition, a pixel refers to control a unit of lightness.Accordingly, as an example, a pixel is
Refer to a color elements, and show lightness by this color elements.Therefore, using by these color elements structures of RGB
In the case of the colour display device become, the least unit of pixel is by the pixel these three picture of the pixel of R, the pixel of G and B
Element is constituted.
As one of feature of composition illustrated by present embodiment, it is used for supplying the wiring of the first current potential shown in Fig. 1
108 and be used for supplying the wiring 109 of the second current potential and be connected to multiple pixel 105.Possesses the threshold voltage for compensating TFT not
During the pixel of uniform circuit has voltage procedures as described above and during luminescence.During luminescence, with voltage journey
Difference during sequence, because of the cloth caused by the extension of wiring in the wiring 108 and wiring 109 of the wiring being used as supplying electric current
The impact of line resistance and produce voltage and reduce, and the voltage being used for supplying the wiring of electric current produces deviation.In present embodiment
In structure, switch, in during voltage procedures and during luminescence, the wiring 108 and cloth being used as to be used for supplying the wiring of electric current
The electrical connection of line 109, it is possible to reduce be used for supplying the impact that the voltage caused by wiring of electric current reduces.Below, use specifically
Circuit structure illustrate.
First, the structure of the pixel 105 of above-mentioned Fig. 1 is described.Fig. 2 A illustrates that pixel 105 is connected to connect up 107, connect up 108
And the circuit diagram of wiring 109.Pixel 105 includes: the current potential of wiring 107 extracts the switch of pixel by controlling wiring 106
201 (also referred to as selecting switch)；Light-emitting component 202 according to the control of Electric potentials gray scale from wiring 107 supply；It is connected to luminous unit
The transistor 203 of one side's electrode drive light-emitting component 202 of part 202；Threshold voltage holding for correcting transistor 203 are executed
It is added to the correcting circuit 204 of the video voltage of transistor 203；The electrical connection of the first terminal of switching wiring 108 and transistor 203
Switch 205 (the also referred to as first switch)；And the switch of the electrical connection of the first terminal of switching wiring 109 and transistor 203
206 (also referred to as second switches).It addition, the opposing party's electrode of light-emitting component 202 is connected to be supplied to for driven for emitting lights element
The wiring 207 (the also referred to as the 3rd wiring) of current potential.
In fig. 2, the control signal being used for controlling to switch 201, switch 205 and switch 206 both can be new by arranging
Wiring supply, can use again other wiring to be used in conjunction with, so not illustrating at this.As an example, in the following description
Wiring 106 shown in Fig. 1 is corresponding to being used for controlling to switch the wiring of 201 and illustrate.Additionally, be used for controlling to switch 205 and
The wiring of switch 206 both can configure with wiring 107 abreast, can configure abreast with gate line again.Or, it is possible to so that
Be connected to other row pixel gate line controlled switch 205 and switch 206.It addition, by using the crystal that polarity is different
Pipe constitutes switch 205 and switch 206, and the wiring of the signal that total supply controls switch 205 and switch 206 can reduce wiring
Number, such that it is able to realize the raising etc. of cost degradation, yield rate.
In fig. 2, illustrate with the transistor 203 for driven for emitting lights element 202 for p-channel transistor npn npn.This
Structure shown in embodiment is also sent out when using n-channel transistor npn npn as the transistor 203 for driven for emitting lights element 202
Wave same effect.When using n-channel transistor npn npn as the transistor 203 for driven for emitting lights element 202, need to consider
The polarity of transistor and make transistor 203 and light-emitting component 202 electrically connect.Switched with constituting by the polarity making transistor 203
The polarity of the polarity of the transistor of 201 and the transistor of composition correcting circuit 204 is consistent, can reduce being manufactured into of display device
This.
It addition, the ability made current flow through of switch 205 and switch 206 can be identical or different.As concrete structure,
In the case of using transistor to form switch 205 and switch 206, when the channel width of transistor is W, and with channel length as L
Time, it is possible to so that W/L differently manufactures.Additionally, as switch 205 and the W/L of switch 206, preferably make the W/L's of switch 206
It is worth bigger.As for wiring 108 and wiring 109, wiring 109 can make more electric current flow through.Therefore, by making switch 206
The value of the W/L value than the W/L of switch 205 is big, and more substantial electric current can be made to flow to pixel 105, so being preferred from wiring 109
's.
Then, the driving method of the pixel in the display device of description structure shown in present embodiment.Say with reference to Fig. 2 B
Switch 205 shown in bright Fig. 2 A and the work of switch 206.As it has been described above, during pixel 105 possesses voltage procedures and light emission period
Between.In the display device illustrated by present embodiment, middle during voltage procedures is to turn on by switch 205 control, and will open
Close 206 controls for cut-off.Additionally, control to be cut-off by switch 205 in during luminescence, and control to be conducting by switch 206.
Here, shown in Fig. 3 A, Fig. 3 B and Fig. 4 A, Fig. 4 B the concrete structure of image element circuit and explain pixel
The driving method of 105.
The structure of the image element circuit shown in Fig. 3 A illustrates an example of the circuit diagram of the pixel constituting display device, specifically shown
One example of the correcting circuit 204 shown in Fig. 2 A.As Fig. 2 A, pixel 105 is connected to connect up 107, wiring 108 and wiring 109,
And include switching 201, light-emitting component 202, transistor 203, correcting circuit 204, switch 205 and switch 206.Correcting circuit 204
Including switch 301 (also referred to as first controls switch), switch 302 (also referred to as second controls switch), switch 303 (also referred to as the
Three control switch), capacity cell 304 (the also referred to as first capacity cell), capacity cell 305 (the also referred to as second capacity cell).
Additionally, in this manual, in order to avoid confusing of structural agent, switch and be referred to as sometimes according to its feature difference
" select switch ", " controlling switch " or referred to as " switch ", but as long as control the first terminal and the electrical connection of the second terminal, i.e.
Can.
In addition it is possible to use the switch of various modes.Such as there are electric switch or mechanical switch etc..In other words, if it
Control the flowing of electric current, and be not limited to particular switch.Such as, as switch, it is possible to use transistor is (such as, bipolar
Transistor or MOS transistor etc.), diode (such as, PN diode, PIN diode, Schottky diode, MIM
(MetalInsulator Metal；Metal-insulator-metal type) diode, MIS (Metal
InsulatorSemiconductor；Metal-insulator semiconductor) diode, diode connect transistor etc.) etc..Or
Person, it is possible to use be combined with their logic circuit as switch.
As the example of mechanical switch, have and utilize MEMS (mems as digital micro-mirror device (DMD)
System) switch of technology.This switch has the most movable electrode, and moves control conducting by this electrode and do not lead
Lead to come work.
In the case of transistor is used as switch, owing to this transistor is as simple switch, therefore to crystal
The polarity (conduction type) of pipe is not particularly limited.But, in the case of cut-off current to be suppressed, cut-off current is preferably used
The transistor of few polarity.As the transistor that cut-off current is few, have and there is the transistor of LDD region or there is multi-grid structure
Transistor etc..Or, when the transistor as switch source terminal current potential with low potential side power supply (Vss, GND,
0V etc.) current potential close value work time, it is preferred to use N channel transistor.In contrast, when source terminal current potential with
When the value close with the current potential of hot side power supply (Vdd etc.) works, it is preferred to use P-channel transistor npn npn.This is because it is as follows
Reason: in N-channel transistor npn npn, can increase when source terminal works with the value close with the current potential of low potential side power supply
Grid and the absolute value of voltage between source electrodes, and in P-channel transistor npn npn, when source terminal is with the current potential with hot side power supply
Close value can increase the absolute value of grid and voltage between source electrodes when working, therefore can carry out more accurate work as switch
Make.It addition, this is because to follow the situation of work few, so the situation that output voltage reduces is few owing to transistor carries out source electrode
Reason.
Furthermore it is possible to by using N-channel transistor npn npn and P-channel transistor npn npn both sides to be used as to open by CMOS-type switch
Close.When using CMOS-type switch, if either one in P-channel transistor npn npn and N-channel transistor npn npn turns on, electric current flows through,
Therefore switch is easily served as.Such as, even if the voltage transferring to the input signal of switch is high or low, it is possible to so that suitably exporting electricity
Pressure.It is additionally, since the voltage amplitude amplitude that can reduce the signal for making switch conduction or cut-off, so power consumption can also be reduced
Amount.
Additionally, in the case of transistor is used as switch, switch has input terminal (in source terminal and drain terminal
One of side), lead-out terminal (the opposing party in source terminal and drain terminal) and control conducting terminal (gate terminal).
On the other hand, in the case of diode is used as switch, switch does not the most have the terminal controlling conducting.Therefore, with use
Transistor is compared as the situation of switch, by using diode as switch, it is possible to reduce for the wiring number of control terminal
Amount.
In figure 3 a, switch 201 the first terminal, switch 301 the first terminal, an electrode of capacity cell 304 and
One electrode of capacity cell 305 interconnects.Additionally, the second terminal of switch 301, the first terminal of transistor 203, electric capacity
The first terminal of another electrode of element 305, the first terminal of switch 205 and switch 206 interconnects.Capacity cell 304
The gate terminal of another electrode, the first terminal of switch 302 and transistor 203 interconnects.Second terminal of switch 302, crystalline substance
The first terminal of the second terminal of body pipe 203 and switch 303 interconnects.Additionally, the second terminal of switch 303 is connected to luminescence
The anode side of element 202.
Additionally, the structure of the image element circuit shown in Fig. 3 B is shown in an example of the correcting circuit 204 shown in Fig. 3 A and opens
Pass 303 and light-emitting component 202 are arranged in parallel the structure of switch 306 (the also referred to as the 4th controls switch).Pixel 105 shown in Fig. 3 B
Be equally connected to connect up 107, wiring 108 and wiring 109 with Fig. 3 A, and include switching 201, light-emitting component 202, transistor
203, correcting circuit 204, switch 205 and switch 206.And, correcting circuit 204 includes switching 301, switch 302, switch 303,
Capacity cell 304, capacity cell 305, switch 306.
Fig. 3 B and Fig. 3 A difference is: the second terminal of switch 302, the second terminal of transistor 203, switch 303
The first terminal and switch 306 the first terminal interconnect；And switch second terminal of 306 to be connected to connect up 207.
Additionally, in the structure of the image element circuit shown in Fig. 4 A, at an example breaker in middle of the correcting circuit 204 shown in Fig. 3 A
Second terminal of 301 is connected to newly-installed wiring 307 (the also referred to as the 4th wiring).Pixel 105 shown in Fig. 4 A is connected to cloth
Line 107, wiring 108, wiring 109 and wiring 307, and include switching 201, light-emitting component 202, transistor 203, correcting circuit
204, switch 205 and switch 206.And, correcting circuit 204 includes switching 301, switch 302, switch 303, capacity cell 304,
Capacity cell 305.
Fig. 4 A and Fig. 3 A difference is: switch 301 the second terminal be free of attachment to transistor 203 the first terminal,
Another electrode of capacity cell 305, the first terminal of switch 205 and the first terminal of switch 206 and be connected to newly-installed cloth
Line 307.
Additionally, the structure of the image element circuit shown in Fig. 4 B illustrates: do not set in an example of the correcting circuit 204 shown in Fig. 3 B
Put switch 303 and wiring 309 (the also referred to as the 5th wiring) is connected to switch the structure of second terminal of 308.Shown in Fig. 4 B
Pixel 105 is connected to connect up 107, wiring 108, wiring 109 and wiring 309, and include switching 201, light-emitting component 202, crystal
Pipe 203, correcting circuit 204, switch 205 and switch 206.And, correcting circuit 204 includes switching 301, switch 302, electric capacity unit
Part 304, capacity cell 305, switch 308.
Fig. 4 B and Fig. 3 B difference is: be not provided with switching 303 ground by the second terminal of transistor 203 and light-emitting component
The anode side of 202 and the first terminal of switch 308 are directly connected to；And switch second terminal of 308 to be connected to connect up 309.
Then, with reference to the circuit shown in Fig. 5 A, Fig. 5 B and Fig. 6 A, Fig. 6 B explanatory diagram 3A, Fig. 3 B and Fig. 4 A, Fig. 4 B
Operation principle.
Fig. 5 A, Fig. 5 B and Fig. 6 A, Fig. 6 B illustrate the cloth corresponding to the circuit shown in Fig. 3 A, Fig. 3 B and Fig. 4 A, Fig. 4 B
Line 108, wiring 109, wiring 207 (or wiring 309), transistor 203, switch 301, switch 302, switch 303 (or switch
308), capacity cell 304, capacity cell 305, switch 205 and the element of switch 206.Being supplied to connect up first current potential of 108 is
V1, the second current potential being supplied to connect up 109 is V2.The earthing potential being supplied to connect up 207 is VGND(=0V) and illustrate.For
Explanation does not illustrates, but the most also has the element controlling switch and light-emitting component etc..As for the size of each current potential, tool
There is V2＞ V1＞ ＞ VGNDRelation, and the threshold voltage as p-channel transistor npn npn 203 illustrates for-Vth.Work as crystal
When voltage between source electrode and the grid of pipe 203 is Vgs, if having the relation of Vgs ＜-Vth, transistor 203 turns on, and if
The relation then transistor 203 with Vgs >=-Vth ends.
Additionally, the voltage illustrated by this specification is equivalent to ground voltage VGNDReference potential be potential difference during 0V.Cause
This, be sometimes referred to as voltage current potential or current potential be referred to as voltage.
First, as shown in Figure 5A, make switch 205 turn on, make switch 206 end, make switch 301 turn on, make switch 302 lead
Logical, and make switch 303 turn on.Thus, the current potential (below, grid potential) of the gate terminal of transistor 203 becomes VGND, become
The current potential (below, source potential) of the first terminal of the source electrode of transistor 203 becomes V1.And, by applying as Vgs
(VGND-V1), it is achieved (VGND-V1) ＜-Vth, transistor 203 becomes conducting state.
It addition, when using the structure of Fig. 5 A, electric current can not be made in the circuit structure shown in Fig. 3 B, Fig. 4 A and Fig. 4 B
Flow through to light-emitting component.Therefore, display device can realize the raising of the contrast in display part.
Then, as shown in Figure 5 B, switch 303 is made to end.Thus, grid potential is from the first current potential V1With transistor 203
Threshold voltage amount reduces, and becomes (V1-Vth).And, flow through the electric current in transistor 203 and reduce, then transistor 203
Vgs become the-Vth of threshold voltage, and transistor 203 becomes cut-off state.Then, even if making switch 301 and switch 302
Cut-off also holding-Vth between the grid and source electrode of transistor 203.
Then, as shown in Figure 6A, make switch 301 and switch 302 cut-off, have the first terminal of switch 301, electric capacity to connecting
The node supplying video voltage-V of one electrode of element 304 and an electrode of capacity cell 305data.It addition, at Fig. 6 A
In, owing to the polarity of transistor 203 is p-channel transistor npn npn, therefore video voltage becomes-Vdata.By apply video voltage-
Vdata, the grid potential of transistor 203 becomes (V1-Vdata-Vth).On the other hand, the source potential of transistor 203 becomes and cloth
The current potential that line 108 is identical, i.e. V1.And, by applying (-Vdata-Vth), the Vgs of transistor 203 realizes (-Vdata-
Vth) ＜-Vth, and transistor 203 becomes conducting state.It addition, as-VdataIt is to become black display when 0, so transistor
203 cut-offs.
It addition, in figure 5b, become from the first current potential V in grid potential1Reduce with the threshold voltage amount of transistor 203
(V1-VthBefore), it is possible to so that the switch 301 shown in Fig. 6 A and switch 302 cut-off.By becoming from the first electricity in grid potential
Position V1(the V reduced with the threshold voltage amount of transistor 2031-VthBefore), make switch 301 and switch 302 cut-off, can be respectively
Between pixel, the mobility to transistor 203 is corrected.It is thereby achieved that the raising of display quality.
As it has been described above, during the work shown in Fig. 5 A, Fig. 5 B and Fig. 6 A, Fig. 6 B is equivalent to voltage procedures.
Then, as shown in Figure 6B, switching switch 205 and the on or off of switch 206, and make switch 303 end.Crystal
The source potential of pipe 203 becomes and wiring 109 identical current potential, i.e. V2.On the other hand, owing to electric charge does not moves, therefore crystal
The grid potential of pipe 203 becomes (V because of capacity cell 304 and the Capacitance Coupled of capacity cell 3052-Vdata-Vth).Thus, logical
Cross applying (-Vdata-Vth), the Vgs of transistor 203 becomes (-Vdata-Vth) ＜-Vth, and transistor 203 turns on.And, electricity
Flow and flow through to wiring 207 side with light-emitting component by switch 303.That is, it may be considered that in each transistor
Have threshold voltage vt h devious and apply the Vgs of transistor 203.It addition, as-VdataWhen being 0, transistor 203 ends, and
Light-emitting component is the most luminous.
As it has been described above, during the work shown in Fig. 6 B is equivalent to luminescence.
As a result, it is possible to be drivingly connected to the second end of transistor 203 after the threshold voltage of correcting transistor 203
The light-emitting component of son.
It addition, in the example of the circuit illustrated by Fig. 5 A, Fig. 5 B and Fig. 6 A, Fig. 6 B, use p as transistor 203
Channel transistor, and an example of the current potential of polarity input/output according to transistor 203 is shown.It is not limited to this, works as conduct
Transistor 203 also drives when using n-channel transistor npn npn in the same manner as the work of above-mentioned transistor 203,.
Then, the circuit of the pixel further illustrating display device with reference to Fig. 7 A, Fig. 7 B and Fig. 8 A, Fig. 8 B works.
It addition, for the circuit shown in Fig. 7 A, Fig. 7 B and the on or off of switch, specifically describe with reference to the circuit diagram shown in Fig. 3 A
Circuit work described in above-mentioned Fig. 5 A, Fig. 5 B and Fig. 6 A, Fig. 6 B.Additionally, tie shown in present embodiment to specifically describe
The effect of structure, the on or off of the circuit shown in Fig. 8 A, Fig. 8 B and switch is not switch shown in Fig. 7 A as comparative example
Switch 205 and switch 206 and in the case of only making switch 205 often become conducting, only wiring 108 is connected to transistor
The explanation that circuit when 203 is carried out.
In fig. 7, to circuit diagram remarks reference in the same manner as Fig. 3 A.Additionally, illustrate switch 205 in figure 7b, open
Close 206, the switching of on or off in the interval a to g of switch 201, switch 301, switch 302, switch 303 and transistor
The source potential of 203 and the displacement of the grid potential of transistor 203.It addition, the source potential of transistor 203 is equivalent to transistor
The current potential of the side that the first terminal of 203 is connected with the first terminal of switch 205 and switch 206.
Fig. 7 A and Fig. 8 B is shown connected to the wiring 107 shown in Fig. 3 A, wiring 108 and wiring 109, and include switching 201,
The circuit structure of the pixel 105 of light-emitting component 202, transistor 203, correcting circuit 204, switch 205 and switch 206.Correction electricity
Road 204 includes switching 301, switch 302, switch 303, capacity cell 304, capacity cell 305.The electrical connection of each element and Fig. 3 A
In explanation same.In Fig. 7 A and Fig. 8 A, the first current potential being supplied to connect up 108 is V1, and be supplied to connect up the second of 109
Current potential is V2.The earthing potential being supplied to connect up 207 is VGND(=0V), is-V from the video voltage of wiring 107 supplydataAnd
Illustrate.In order to illustrate not illustrate, but also there is in pixel 105 element controlling switch and light-emitting component etc..As for
The size of each current potential, has V2＞ V1＞ ＞ VGNDRelation, and enter with the threshold voltage of p-channel transistor npn npn 203 for-Vth
Row explanation.When voltage between the source electrode and grid of transistor 203 is Vgs, if having the relation of Vgs ＜-Vth, transistor
Conducting, if having the relation of Vgs >=-Vth, transistor cutoff.-VdataDifferent according to image to be shown.
First, make switch 205 turn on, make switch 206 end, make switch 201 end, make switch 301 to 303 conducting (figure
7B, interval is a).In interval a, the source potential of transistor 203 is V1, and the grid potential of transistor 203 is VGND.Transistor
Potential difference between grid and the source electrode of 203 is (VGND-V1).It addition, in interval a, transistor 203 turns on.
Then, make switch 205 turn on, make switch 206 end, make switch 201 end, make switch 301 turn on, make switch
302 conductings, and (Fig. 7 B, interval is b) to make switch 303 end.In interval b, the source potential of transistor 203 is V1, and crystal
The grid potential of pipe 203 is (V1-Vth).The grid potential of transistor 203 rises, this is because following reason: in interval a
Transistor 203 turns on, and by making switch 303 end in interval b, the grid potential of transistor 203 becomes from wiring 108
Current potential V1Deduct the voltage of the threshold voltage vt h of transistor 203.Potential difference between grid and the source electrode of transistor 203
For-Vth.It addition, in interval b, transistor 203 ends.
Then, make switch 205 turn on, make switch 206 end, make switch 201 end, and make switch 301 to 303 end
(Fig. 7 B, interval is c).In interval c, the source potential of transistor 203 is V1, the grid voltage of transistor 203 is (V1-Vth)。
In other words, the voltage Vgs of interval b is kept.It addition, in interval c, transistor 203 ends.
Then, make switch 205 turn on, make switch 206 end, make switch 201 turn on, make switch 301 to 303 cut-off (figure
7B, interval is d).In interval d, the source potential of transistor 203 is V1, the grid potential of transistor 203 is (V1-Vth-
Vdata).Potential difference between grid and the source electrode of transistor 203 is (-Vth-Vdata).It is to say, can be by threshold value electricity
Pressure-Vth adds video voltage-VdataAfter Vgs be applied to transistor 203.It is essential that in the interval d of Fig. 7 B first electricity
Position V1Do not change.This is because following reason: if the first current potential V when switching 201 conducting1Variation, then be maintained at capacity cell
Electric charge variation in 305, therefore can not keep the Vgs of transistor 203.
Then, make switch 205 turn on, make switch 206 end, make switch 201 end, make switch 301 to 303 cut-off (figure
7B, interval is e).In interval e, the source potential of transistor 203 is V1, the grid potential of transistor 203 is (V1-Vth-
Vdata).It is to say, the voltage Vgs of interval d is kept, and the potential difference between the grid of transistor 203 and source electrode be (-
Vth-Vdata).It is to say, video voltage-V can will be added threshold voltage-VthdataAfter Vgs be applied to transistor
203.It addition, in interval e, transistor 203 is as-VdataEnd when being 0, in addition response-VdataConducting.
As it has been described above, during the work shown in interval a to e shown in Fig. 7 B is equivalent to voltage procedures.
Then, make switch 205 end, make switch 206 turn on, make switch 201 end, make switch 301 to 303 cut-off (figure
7B, interval is f).In interval f, keep the Vgs of interval e because of Capacitance Coupled.Therefore, switching switch 205 and switch 206 lead
Lead to or cut-off, and when the source potential of transistor 203 is V2Time, the grid potential of transistor 203 is (V2-Vth-Vdata).Also
That is, it is possible to threshold voltage-Vth will be added video voltage-VdataAfter Vgs be applied to transistor 203.It addition, in district
Between in f, transistor 203 is as-VdataEnd when being 0, in addition response-VdataConducting.
Then, make switch 205 end, make switch 206 turn on, make switch 201 end, make switch 301 end, make switch
302 cut-offs, (Fig. 7 B, interval is g) to make switch 303 end.In interval g, keep the Vgs of interval f.Therefore, the source of transistor 203
Electrode potential is V2, the grid potential of transistor 203 is (V2-Vth-Vdata).It is to say, can threshold voltage-Vth will be chased after
Add video voltage-VdataAfter Vgs be applied to transistor 203.Furthermore, it is possible to make in each pixel transistor compensate have
The electric current of the threshold voltage of deviation flows through in light-emitting component 202.It addition, in interval g, transistor 203 is as-VdataIt is to cut when 0
Only, and to flow through the electric current in light-emitting component 202 be also 0.
As it has been described above, during the work shown in interval f to g in Fig. 7 B is equivalent to luminescence.
Explanatory diagram 8A, Fig. 8 B.In the circuit diagram shown in Fig. 8 A, for Fig. 7 A with a part or have with Fig. 7 A as
The identical reference of the part remarks of function and represent.In Fig. 8 A, Fig. 8 B, illustrate by switching switch 205 and switch
206, the source potential of transistor 203 is not switched to the first current potential V1With the second current potential V2Structure.Therefore, described below
Fig. 8 B explanation in, illustrate under conditions of often switch 205 conducting and switch 206 cut-off.It addition, in fig. 8 a,
In order to illustrate that switch 206 cut-off and wiring 109 are free of attachment to the state of pixel, switch 206 shown in broken lines and wiring 109.
First, making switch 201 end, (Fig. 8 B, interval is a) to make switch 301 to 303 conducting.In interval a, transistor 203
Source potential be V1, the grid potential of transistor 203 is VGND.Potential difference between grid and the source electrode of transistor 203 is
(VGND-V1).It addition, in interval a, transistor 203 turns on.
Then, make switch 201 end, make switch 301 turn on, make switch 302 turn on, make switch 303 end (Fig. 8 B, district
Between b).In interval b, the source potential of transistor 203 is V1, the grid potential of transistor 203 is (V1-Vth).Transistor 203
Grid potential rise, this is because following reason: transistor 203 turns in interval a, by making switch 303 in interval b
Cut-off, the grid potential of transistor 203 becomes the current potential V from wiring 1081Deduct the threshold voltage vt h's of transistor 203
Voltage.Potential difference between grid and the source electrode of transistor 203 is-Vth.It addition, in interval b, transistor 203 ends.
Then, making switch 201 end, (Fig. 8 B, interval is c) to make switch 301 to 303 cut-off.In interval c, transistor 203
Source potential be V1, the grid voltage of transistor 203 is (V1-Vth).It is to say, keep the voltage Vgs of interval b.It addition,
In interval c, transistor 203 ends.
Then, making switch 201 turn on, (Fig. 8 B, interval is d) to make switch 301 to 303 cut-off.In interval d, transistor 203
Source potential be V1, the grid potential of transistor 203 is (V1-Vth-Vdata).Between grid and the source electrode of transistor 203
Potential difference is (-Vth-Vdata).It is to say, video voltage-V can will be added threshold voltage-VthdataAfter Vgs apply
To transistor 203.It is essential that in the interval d of Fig. 8 B, the first current potential V1Do not change.This is because following reason: if working as
First current potential V during switch 201 conducting1Variation, then the electric charge being maintained in capacity cell 305 variation, therefore can not keep crystal
The Vgs of pipe 203.
Then, making switch 201 end, (Fig. 8 B, interval is e) to make switch 301 to 303 cut-off.In interval e, transistor 203
Source potential be V1, the grid potential of transistor 203 is (V1-Vth-Vdata), and keep the grid of the transistor 203 of interval d
And the potential difference (-Vth-V between source electrodedata).It is to say, video voltage-V can will be added threshold voltage-VthdataAfter
Vgs be applied to transistor 203.It addition, in interval e, transistor 203 is as-VdataEnd when being 0, in addition response-
VdataConducting.
As it has been described above, during the work shown in interval a to e shown in Fig. 8 B is equivalent to voltage procedures.
Then, make switch 201 end, make switch 301 end, make switch 302 end, make switch 303 turn on (Fig. 8 B, district
Between f).In interval f, keep the Vgs of interval e.Therefore, the source potential of transistor 203 is V1, the grid electricity of transistor 203
Position is (V1-Vth-Vdata).It is to say, video voltage-V can will be added threshold voltage-VthdataAfter Vgs be applied to
Transistor 203.Furthermore, it is possible to make the electric current that the transistor 203 in each pixel compensates tool threshold voltage devious flow through
In light-emitting component 202.It addition, in interval f, transistor 203 is as-VdataEnd when being 0, and flow through in light-emitting component 202
Electric current is also 0.
As it has been described above, during the work shown in interval f shown in Fig. 8 B is equivalent to luminescence.
With reference to Fig. 9 A, Fig. 9 B explanatory diagram 7A, Fig. 7 B and Fig. 8 A, the difference of Fig. 8 B, and explain this embodiment party
The effect of the structure shown in formula.Fig. 9 A illustrates and passes through switch with the wiring 108 extended from power circuit 104 and wiring 109
205 or multiple pixel 105a to 105d of switch 206 connection.Wiring 108 and wiring 109 illustrate dead resistance 901 and posts
Raw resistance 902.It addition, wiring 108 and wiring 109 with above-mentioned Fig. 7 A, Fig. 7 B explanation in the same manner as be applied with the first current potential respectively
V1And the second current potential V2.As described above, during voltage procedures, breaker in middle 205 turns on, and breaker in middle during luminescence
206 conductings.Additionally, Fig. 9 B be shown connected to from multiple pixels 105a of the extended wiring 108 of power circuit 104 to
105d.Wiring 108 illustrates dead resistance 901 and dead resistance 902.It addition, wiring 108 is same with the explanation of Fig. 8 A, Fig. 8 B
It is applied with the first current potential V sample1.Additionally, in Fig. 9 A, Fig. 9 B, in order to illustrate, illustrate with following condition: when by pixel
When pixel 105a scans pixel 105d, during pixel 105a is voltage procedures, and pixel 105b is to pixel 105d
During luminescence.
In the structure of the image element circuit of the display device of the structure shown in present embodiment, can be with Fig. 8 A, Fig. 8 B institute
The work shown is different and during utilizing switch 205 and switch 206 switching voltage procedures the most like that and luminous
Being used in period supplies the wiring of electric current to pixel.Therefore, it can not reduced by voltage switch to light emission period with being affected
Between, and respectively working during voltage carries out voltage procedures with reducing can be not resulted in.
Such as, in figures 9 b and 9, as the electric current I flowing through the pixel 105b to 105d being connected to connect up 108LGreatly, i.e. pixel
When the brightness of the light-emitting component of 105b to 105d is big, the voltage connecting up 108 because of dead resistance 901 and 902 reduces.Therefore, with
The size of the electric current Ic of pixel 105a in during flowing through voltage procedures is unrelated, and the voltage of wiring 108 reduces, the i.e. first current potential V1
Reduce.As a result of which it is, in pixel 105a being connected to connect up 108, when making switch 201 turn on, it is impossible to keep transistor 203
Vgs.It addition, the wiring 108 of the wiring for supplying electric current has inhomogeneities, the most a large amount of electric currents flow through,
Electric current flows through hardly.The voltage of the uneven wiring having influence on for supplying electric current of this electric current uneven.It is used for supplying
The electric current I making light-emitting component luminous just it is used to the reason of the voltage generation deviation of the wiring of electric currentLAccording to gray scale
Different.
Additionally, in figure 9 a, as the electric current I flow through in the pixel 105b to 105d being connected to connect up 109LGreatly, picture is i.e. worked as
When the brightness of the light-emitting component of element 105b to 105d is big, the voltage connecting up 109 because of parasite current 901 and 902 reduces.The opposing party
Face, flows through the electric current Ic of pixel 105a in during voltage procedures than electric current ILLittle, therefore almost without occurring voltage to reduce institute
The the first current potential V caused1Minimizing.
State during each pixel in display device becomes voltage procedures according to each row or during luminescence.Due to respectively
Circulate at each grid during the voltage procedures of pixel input video voltage, therefore the produced electric current (electricity in Fig. 9 A, Fig. 9 B
Stream Ic) minimum.On the other hand, during luminescence in, according to size (Fig. 9 A, Fig. 9 B of the electric current being flow through pixel by holding wire
In electric current IL), i.e. the size of the brightness of the light-emitting component that pixel is had, the electric current flow through is different, and because of electric current stream
The voltage crossed and occur dead resistance to be caused reduces.Thus, during the switching voltage procedures illustrated by Fig. 9 A and light emission period
In the structure of the wiring of the connection between, can during voltage procedures in switch to the voltage that caused with dead resistance to reduce
The connection of wiring 108 that reduces of impact, reduce the impact that the work on the threshold voltage in correction pixels causes.The opposing party
Face, although the luminous unit that the wiring 109 connected in during luminescence is had according to the size of the electric current flowing through pixel, i.e. pixel
The size of the brightness of part, the electric current flow through is different, but utilizes Capacitance Coupled can keep Vgs, therefore can reduce voltage
The impact reduced.
By using the structure shown in present embodiment, when the voltage that dead resistance is caused reduces big, it is possible to reduce
Each pixel is supplied the current potential V of mutually different wiring 1081Or the current potential V of wiring 1092Time bad impact.Additionally, it is preferred that
, the first current potential V1And the second current potential V2It is output as same potential when exporting from power circuit.
Then, with reference to the wiring 108 in Figure 10 A to Figure 10 D explanation display device and the bootstrap technique of wiring 109.
By connecting up 108 and wiring 109 according to each different period switching, can be with corrected threshold voltage.As it has been described above,
During voltage procedures, reduce, by reducing the electric current flow through in wiring 108 as far as possible, the impact that voltage reduces.Though additionally,
In so during luminescence, owing to flowing through the size of the electric current of wiring 109 according to the brightness flop of light-emitting component, therefore it is easily subject to
The impact of dead resistance, but utilize Capacitance Coupled to reduce the impact that voltage reduces.
From flexible printed board 110 guide wiring 108 and wiring 109 can also use the most like that from
The structure that one terminal of flexible printed board 110 guides respectively.Further, it is also possible to use the most like that from soft
Property printed base plate 110 multiple terminals guide and become wiring 108 and the structure of wiring of wiring 109.By using from multiple ends
Son guides wiring 108 and the structure of wiring 109, stable current potential can be supplied to each pixel.In addition it is also possible to use such as
As shown in Figure 10 C, wiring 108 and wiring 109 are configured to the structure in the outside around display part 103.In fig 1 oc, by
In the inner side by wiring 108 being arranged in wiring 109, the length of the guiding of wiring can be shortened, therefore can be not susceptible to
The impact reduced to voltage.Additionally, by the most like that wiring 108 and wiring 109 being configured to around display part
103 and be arranged in pixel portion with clathrate, stable current potential can be supplied to connect up 108 and wiring 109, so being preferred
's.
Arrange in the path of the wiring 108 illustrated by above-mentioned Figure 10 A to Figure 10 D and wiring 109 alternatively, it is also possible to use
The structure of power circuit.
Additionally, as wiring 108 and the line width of wiring 109, it is also possible to expand the peripheral side being arranged on display part 103
The line width of wiring.By making the line width being arranged on the peripheral wiring of display part 103 than the wiring inside being arranged on
Line width is big, can make produced by the wiring 108 caused by prolongation of the guiding distance of wiring and the dead resistance of wiring 109
Difference equalization.Moreover it is preferred that compared with the wiring 109 being connected to pixel during luminescence, be connected to during voltage procedures
The uneven impact of current potential produced by the dead resistance of the wiring 108 of pixel is little.It is preferred, therefore, that the wiring of wiring 108
Guiding apart from little, and wiring 108 is arranged on the inner side that dead resistance is little.
In addition it is also possible to make the line width of wiring 108 bigger than the line width of wiring 109.By making the line width of wiring 108
Become big, the dead resistance of wiring 108 can be reduced.Preferably, compared with the wiring 109 being connected to pixel during luminescence,
The uneven impact of current potential produced by the dead resistance cause the wiring 108 being connected to pixel during voltage procedures is little.
In addition it is also possible to make line width and the line width difference of wiring 109 of wiring 108 according to each color elements.Logical
Cross the line width of wiring 108 made according to each color elements and the line width of wiring 109 is difference, each color can be relaxed
The brightness of unit uneven, so being preferred.
It addition, be described with reference to various accompanying drawings in the present embodiment.The content described in the drawings (can also be
Part thereof of content) to the content (can also be part thereof of content) described in other accompanying drawing, other embodiment party
Content (can also be part thereof of content) described in formula can freely carry out applying, combine or displacement etc..Furthermore,
In above-mentioned accompanying drawing, each several part can be combined other parts, the part of other embodiment.
Embodiment 2
In the present embodiment, illustrate to have the display part that formed by the various image element circuits illustrated by embodiment 1
The structure of display floater.
It addition, in the present embodiment, display floater refers to be formed with the substrate of image element circuit and contact formation
Total thing.Such as, in the case of being formed with image element circuit on a glass substrate, glass substrate is connect with glass substrate
The contact to earth transistor that formed, wiring etc. is referred to as display floater.
In display floater, in addition to image element circuit, sometimes it is formed with the peripheral drive circuit for driving image element circuit
(being integrally formed).Typical peripheral drive circuit is that (also referred to as scan line is driven for the scanner driver of the scan line controlling display part
Dynamic device, gate drivers etc.), the data driver (also referred to as signal line drive, source electrode driver etc.) of control signal wire.Again
Person, is used for controlling the timing controller of these drivers, processing the data processing division of view data, the power supply of generation supply voltage
Circuit, the reference voltage generating unit etc. of digital analog converter are included in peripheral drive circuit the most sometimes.
And, by peripheral drive circuit and image element circuit are integrally formed on the same substrate, it is possible to reduce display surface
The quantity of the substrate junction point of plate and external circuit.Owing to the mechanical strength of substrate junction point is low, and easily produce bad connection,
Therefore the quantity by reducing substrate junction point can be significantly increased the reliability of device.Furthermore, have the following advantages: because
The quantity of external circuit can be reduced, it is possible to reduce manufacturing cost.
But, compared with the element being formed at single crystal semiconductor substrate, form the semiconductor element on the substrate of image element circuit
The mobility of part is low, and the characteristic between element is uneven the biggest.Therefore, when peripheral drive circuit being integrally formed in and pixel
Time on the same substrate of circuit, need to carry out various investigation, be the element function realizing the function of its circuit and need raising,
Or it is used for making up the not enough circuit engineering etc. of element function.
When peripheral drive circuit being integrally formed on substrate same with image element circuit, such as, can mainly enumerate as follows
Structure: (1) only forms display part；(2) display part and scanner driver it are integrally formed；(3) display part, turntable driving it are integrally formed
Device and data driver；(4) display part, scanner driver, data driver and other peripheral drive circuit it are integrally formed.But
It is, as the combination of integral part of circuit, structure other than the above can be used.Such as, while it is desirable to reduce and there is scanning
The frame area of the part of driver, but when need not the frame area reducing the part with data driver, sometimes (5)
The structure being integrally formed display part and data driver is the most suitable.Similarly, it is also possible to use following structure: (6) are integrally formed
Display part and other peripheral drive circuit；(7) display part, data driver and other peripheral circuit it are integrally formed；(8) one bodily forms
Become display part, scanner driver and other peripheral drive circuit.
＜ (1) only forms display part ＞
Display part is only formed with reference to (1) in Figure 11 A explanation combinations thereof.Display floater 800 shown in Figure 11 A includes showing
Show portion 801 and connecting portion 802.Connecting portion 802 includes multiple electrode, and by connection substrate 803 is connected to connecting portion 802,
The inside that signal can will be driven from the outside of display floater 800 to be input to display floater 800.
It addition, when scanner driver and data driver not being integrally formed with display part, connecting portion 802 is had
Quantity about the sum total of the quantity of the scan line that the quantity of electrode is had by display part 801 and the quantity of holding wire.But,
By carrying out the input to holding wire in time division mode, can be time division number by the quantity set of the electrode of holding wire
The one of amount point.Such as, in the display device that can carry out colored display, by with time division mode carry out corresponding to R, G,
The input of the holding wire of B, can be 1/3rd by the quantity set of the electrode of holding wire.This situation is in present embodiment
In other example too.
It addition, as not integral part of with display part 801 peripheral drive circuit, it is possible to use formed by single crystal semiconductor
IC.IC may be mounted on the printed base plate of outside, it is also possible to installs (TAB) and maybe can install on connection substrate 803
(COG) on display floater 800.This situation in other example of present embodiment too.
It addition, in order to suppress scan line because being had at display part 801 or holding wire produce electrostatic and element is broken
Bad phenomenon (electrostatic breakdown: ESD), display floater 800 can also include between each scan line, each holding wire or each power line
Electrostatic breakdown protection circuit.Thus, it is possible to improve the yield rate of display floater 800, as a result, it is possible to reduce manufacturing cost.
This situation in other example of present embodiment too.
When the semiconductor element that display floater 800 is had is formed by the quasiconductor that the mobility of non-crystalline silicon etc. is low, figure
Display floater 800 shown in 11A is the most effective.This is because following reason: by not by the peripheral driver electricity beyond display part
Road is integrally formed with display floater 800, can improve the yield rate of display floater 800, is manufactured into as a result, it is possible to reduce
This.
＜ (2) is integrally formed display part and scanner driver ＞
It is integrally formed display part and scanner driver with reference to (2) in Figure 11 B explanation combinations thereof.Showing shown in Figure 11 B
Show that panel 800 includes display part 801, connecting portion 802, scanner driver 811, scanner driver 812, scanner driver 813, sweeps
Retouch driver 814.Connecting portion 802 includes multiple electrode, and by connection substrate 803 is connected to connecting portion 802, can be by
Signal is driven to be input to the inside of display floater 800 from the outside of display floater 800.
In the display floater 800 shown in Figure 11 B, because scanner driver 811, scanner driver 812, scanner driver
813 and scanner driver 814 be integrally formed with display part 801, so need not the connecting portion 802 and even of scanner driver side
Connect substrate 803.Thus, there is the advantage that the degree of freedom of the configuration of external substrate improves.Furthermore, due to the quantity of substrate junction point
Few, therefore it is less likely to occur bad connection, it is possible to improve the reliability of device.
The semiconductor element that display floater 800 shown in Figure 11 B is had both can be low by the mobility of non-crystalline silicon etc.
Quasiconductor is formed, and can be formed by the quasiconductor that the mobility of polysilicon or monocrystal silicon etc. is high again.Partly lead when being formed by non-crystalline silicon
During body member, especially few because of the process number of the manufacturing process of reciprocal cross shift transistor, such that it is able to reduce manufacturing cost.When by many
When crystal silicon forms semiconductor element, transistor can be reduced because mobility is high, thus aperture opening ratio improves and can reduce power consumption
Amount.Furthermore, because transistor can be reduced to reduce the circuit area of scanner driver, it is possible to reduce frame area.When
When being formed semiconductor element by monocrystal silicon, owing to transistor can be made to be minimum because mobility is high, therefore can be more significantly
Degree ground improves aperture opening ratio and more greatly reduces frame area.
＜ (3) is integrally formed display part, scanner driver and data driver ＞
It is integrally formed display part, scanner driver and data driver with reference to (3) in Figure 11 C explanation combinations thereof.Figure
Display floater 800 shown in 11C includes display part 801, connecting portion 802, scanner driver 811, scanner driver 812, scanning
Driver 813, scanner driver 814, data driver 821.Connecting portion 802 includes multiple electrode, and by by linker
Plate 803 is connected to connecting portion 802, can be input to driving signal in display floater 800 from the outside of display floater 800
Portion.
In the display floater 800 shown in Figure 11 C, due to scanner driver 811, scanner driver 812, scanner driver
813, scanner driver 814 and data driver 821 are integrally formed with display part 801, therefore need not scanner driver side
Connecting portion 802 and connect substrate 803, it is possible to reduce scanner driver side connect substrate 803 quantity.Therefore,
There is the advantage that the degree of freedom of the configuration of external substrate improves further.Furthermore, the quantity of substrate junction point is few, so being not easy to produce
Give birth to bad connection and the reliability of device can be improved.
The semiconductor element that display floater 800 shown in Figure 11 C is had both can be low by the mobility of non-crystalline silicon etc.
Quasiconductor is formed, and can be formed by the quasiconductor that the mobility of polysilicon or monocrystal silicon etc. is high again.Half is formed when using non-crystalline silicon
During conductor element, especially can reduce manufacturing cost because manufacturing process's number of reciprocal cross shift transistor is few.When using polysilicon
When forming semiconductor element, transistor can be reduced because mobility is high, thus aperture opening ratio improves and can reduce power consumption.Again
Person, can reduce the circuit area of scanner driver and data driver because reducing transistor, such that it is able to reduce limit
Frame area.Especially since the driving frequency of data driver is higher than the frequency of scanner driver, therefore by using polysilicon
Form semiconductor element, it is possible to achieve the data driver that can be positively operated.Quasiconductor is formed when using monocrystal silicon
During element, owing to transistor can be made because mobility is high to be minimum, therefore can more greatly improve aperture opening ratio and subtract
Few frame area.
＜ (4) is integrally formed display part, scanner driver, data driver and other peripheral drive circuit ＞
With reference to Figure 11 D explanation combinations thereof in (4) be integrally formed display part, scanner driver, data driver and
Its peripheral drive circuit.Display floater 800 shown in Figure 11 D includes display part 801, connecting portion 802, scanner driver 811, sweeps
Retouch driver 812, scanner driver 813, scanner driver 814, data driver 821, other peripheral drive circuit 831,
832,833 and 834.Here, four other peripheral drive circuits integral part of are examples.Other peripheral driver integral part of
The quantity of circuit can be various, and its kind can also be various.Such as, peripheral drive circuit 831 can
To be timing controller, peripheral drive circuit 832 can be the data processing division processing view data, peripheral drive circuit 833
Can be the power circuit generating supply voltage, peripheral drive circuit 834 can be the benchmark electricity of digital analog converter (DAC)
Pressure generating unit.Connecting portion 802 includes multiple electrode, and by connection substrate 803 is connected to connecting portion 802, can will drive
Signal is input to the inside of display part 800 from the outside of display floater 800.
In the display floater 800 shown in Figure 11 D, due to scanner driver 811, scanner driver 812, scanner driver
813, scanner driver 814, data driver 821, other peripheral driver 831,832,833 and 834 and display part 801 one
Formed, therefore need not the connecting portion 802 of scanner driver side and connect substrate 803, and scanner driver one can be reduced
The quantity connecting substrate 803 of side.Therefore, the advantage that the degree of freedom of the configuration with external substrate improves further.Furthermore, because of
Quantity for substrate junction point is few, so being not easy to produce bad connection, and can improve the reliability of device.
The semiconductor element that display floater 800 shown in Figure 11 D is had both can be low by the mobility of non-crystalline silicon etc.
Quasiconductor is formed, and can be formed by the quasiconductor that the mobility of polysilicon or monocrystal silicon etc. is high again.Half is formed when using non-crystalline silicon
During conductor element, especially can reduce manufacturing cost because the process number of the manufacturing process of reciprocal cross shift transistor is few.Work as use
When polysilicon forms semiconductor element, transistor can be reduced because mobility is high, thus aperture opening ratio improves and can reduce consumption
Electricity.Furthermore, the circuit area of scanner driver and data driver can be reduced because transistor can be reduced, such that it is able to
Reduce frame area.Especially since the driving frequency of data driver is higher than the driving frequency of scanner driver, therefore pass through
Polysilicon is used to form semiconductor element, it is possible to achieve the data driver that can be positively operated.Furthermore, because other
Peripheral drive circuit needs logic circuit (data processing division etc.) at a high speed, or needs analog circuit (timing controller, DAC
Reference voltage generating unit, power circuit etc.), so it is big to use the high semiconductor element of mobility to constitute the advantage of circuit.Especially
It is, owing to when using monocrystal silicon to form semiconductor element, can make transistor because mobility is high be minimum, thus can
More greatly to improve aperture opening ratio and to reduce frame area, and other peripheral drive circuit can be positively made to work.And
And, by reducing supply voltage etc., it is possible to reduce power consumption.
＜ other combination be integrally formed ＞
Figure 11 E, Figure 11 F, Figure 11 G, Figure 11 H are shown respectively (5) and are integrally formed display part and data driver, (6) integrally
Form display part and other peripheral drive circuit, (7) be integrally formed display part, data driver and other peripheral drive circuit,
(8) display part, scanner driver and other peripheral drive circuit it are integrally formed.About integral part of advantage and other quasiconductor
The advantage of the material of element is as described above.
As depicted in fig. 11E, when (5) are integrally formed display part and data driver, it is possible to reduce be configured with data-driven
Frame area beyond the part of device.
As shown in fig. 11f, when (6) are integrally formed display part and other peripheral drive circuit, because other peripheral driver
The degree of freedom of the configuration of circuit is high, it is possible to properly select the part being suitable for purpose to reduce frame area.
As shown in fig. 11g, when (7) are integrally formed display part, data driver and other peripheral drive circuit, can subtract
The frame area of few part being configured with scanner driver when being integrally formed scanner driver.
As shown in figure 11H, when (8) are integrally formed display part, scanner driver and other peripheral drive circuit, can subtract
The frame area of few part being configured with data driver when being integrally formed data driver.
It addition, be described with reference to various accompanying drawings in the present embodiment.The content described in the drawings (can also be
Part thereof of content) to the content (can also be part thereof of content) described in other accompanying drawing, other embodiment party
Content (can also be part thereof of content) described in formula can freely carry out applying, combine or displacement etc..Furthermore,
In above-mentioned accompanying drawing, each several part can be combined other parts, the part of other embodiment.
Embodiment 3
Structure and the manufacture method of transistor are described in the present embodiment.
Figure 12 A to Figure 12 G illustrates the structure of transistor and the example of manufacture method.Figure 12 A illustrates the structure example of transistor
Son.Figure 12 B to Figure 12 G illustrates the example of the manufacture method of transistor.
Additionally, the structure of transistor and manufacture method are not limited to Figure 12 A to Figure 12 G, various structure and manufacture can be used
Method.
First, with reference to the configuration example of Figure 12 A explanation transistor.Figure 12 A is the mutually different multiple transistors of its structure
Sectional view.Here, for the sake of the convenience that transistor arrangement is described, its structure being set up in parallel is shown in fig. 12 the most not
Identical multiple transistors, but actually, transistor need not be set up in parallel as illustrated in fig. 12, and can on-demand point
Do not arrange.
Additionally, in the case of " B is formed on A " in particular or " B is formed on A ", is not limited to B and directly contacts
It is formed on A A.Also include situation about being not directly contacted with, between A and B, i.e. accompany the situation of other object.Here, A and B
For object (such as device, element, circuit, wiring, electrode, terminal, conducting film, layer etc.).
It is therefoie, for example, " layer B is formed at (or on layer A) on layer A " includes the following two kinds situation: layer B direct contact layer A
Be formed on layer A；And other layer (such as layer C or layer D etc.) is directly formed on layer A contact layer A, and layer B directly connects
Touch other layer of ground to be formed on other layer.Additionally, other layer (such as layer C or layer D etc.) can be monolayer or lamination.
Furthermore, in the case of the top of A " B be formed at " in particular, as described above, it is not limited to B and directly contacts A
Be formed on A.It is additionally included between A and B the situation accompanying other object.It is therefoie, for example, the top of layer A " the layer B be formed at "
Including the following two kinds situation: be formed on layer A layer B direct contact layer A；And other layer (such as layer C or layer D etc.) directly connects
It is formed on layer A to contact layer A, and layer B directly contacts other layer of ground and be formed on other layer.Additionally, other layer (such as layer C or
Layer D etc.) can be monolayer or lamination.
It addition, in the case of " B is formed on A " in particular, " B is formed on A " or the top of A " B be formed at ",
Also include that B is formed at the situation of oblique upper.
The record of " B is formed under A " or " B is formed at below A " is as above-mentioned situation.
Below, illustrate to constitute the feature of each layer of transistor.
As substrate 7011, it is possible to use glass substrate such as barium borosilicate glass and aluminium borosilicate glass etc., quartz
Substrate, ceramic substrate or include stainless metal substrate etc..In addition it is also possible to use by with polyethylene terephthalate
Ester (PET), PEN (PEN), polyether sulfone (PES) are that having of plastics or the acrylic resin etc. of representative is soft
Property synthetic resin formed substrate.Be there is by use the substrate of flexibility, flexible display device can be manufactured.Have soft
The substrate of property does not has big restriction to area and the vpg connection of substrate.Thus, such as, when using a length of side to have more than 1 meter
Rectangular substrate as substrate 7011 time, productivity ratio can be significantly improved.Compared with the situation using circular silicon substrate, this is one
The biggest individual advantage.
Dielectric film 7012 is used as basement membrane.Dielectric film 7012 is set, with prevent from substrate 7011 the alkali metal such as Na or
The characteristic of semiconductor element is adversely affected by alkaline-earth metal.Dielectric film 7012 can use the dielectric film with oxygen or nitrogen
Single layer structure or laminated construction are arranged, and have the insulating film silicon oxide (SiO in this way of oxygen or nitrogenx), silicon nitride (SiNx), oxygen nitrogen
SiClx (SiOxNy, x ＞ y) or silicon oxynitride (SiNxOy, x ＞ y) etc..Such as, when using double-layer structure to arrange dielectric film 7012
Time, it is preferably formed as silicon oxynitride film as ground floor dielectric film, and forms oxygen silicon nitride membrane as second layer dielectric film.As
Another example, when using three-decker to arrange dielectric film 7012, is preferably provided with oxygen silicon nitride membrane as ground floor dielectric film, if
Put silicon oxynitride film as second layer dielectric film, and oxygen silicon nitride membrane is set as third layer dielectric film.
Semiconductor layer 7013, semiconductor layer 7014 and semiconductor layer 7015 can use amorphous semiconductor, crystallite semiconductor,
Oxide semiconductor or semi-amorphous quasiconductor (SAS) are formed.Or, it is possible to use polycrystal semiconductor layer.SAS is that one has
Intermediate structure between non crystalline structure and crystalline texture (including monocrystalline, polycrystalline) and there is the third state that free energy aspect is stable
Quasiconductor, and include the crystal region with shortrange order and distortion of lattice.Can at least some of region in film
To observe the crystal region of 0.5nm to 20nm.When using silicon as main component, Raman spectrum is to less than 520cm-1Wave number
Side offsets.In X-ray diffraction, it can be observed that derive from (111) and the diffraction maximum of (220) of silicon crystal lattice.Including at least 1
The hydrogen or halogen of more than atom %, to terminate unsaturated (dangling bond) key.Put by using material gas to carry out aura
Electricity decomposes (plasma CVD) and forms SAS.As material gas, it is possible not only to use SiH4, it be also possible to use Si2H6、SiH2Cl2、
SiHCl3、SiCl4、SiF4Deng.Or, it is also possible to mixing GeF4.This material gas can also use H2Or H2With selected from He,
One or more rare gas elementary dilutions in Ar, Kr and Ne.Dilution ratio is that in the range of 2 times to 1000 times, pressure is big
Being about 0.1Pa to 133Pa, supply frequency is 1MHz to 120MHz, preferably 13MHz to 60MHz, and substrate heating temperature is
Less than 300 DEG C,.As the impurity element in film, the impurity of Atmospheric components such as oxygen, nitrogen and carbon etc. are preferably 1 × 1020/
cm3Below.Especially, the concentration of oxygen is 5 × 1019/cm3Hereinafter, preferably 1 × 1019/cm3Below.Here, by sputtering method,
LPCVD method or plasma CVD method etc. and use with the silicon (Si) material (the such as Si as main componentxGe1-xDeng) form amorphous
Semiconductor layer, then, by such as laser crystallization method, uses RTA or the thermal crystallisation method of annealing furnace or uses the gold promoting to crystallize
The crystallization method of the thermal crystallisation method etc. belonging to element makes this noncrystal semiconductor layer crystallization.
Additionally, oxide semiconductor is expressed as InMO3(ZnO)m(m ＞ 0).It addition, M represent selected from gallium (Ga), ferrum (Fe),
A kind of metallic element in nickel (Ni), manganese (Mn) and cobalt (Co) or Determination of multiple metal elements.Such as, as M, sometimes use Ga, have
Time comprise above-mentioned metallic element such as Ga and Ni or Ga and Fe etc. beyond Ga.Additionally, in above-mentioned oxide semiconductor, have not
Only comprise the metallic element as M, and further comprise as other migration metallic element maybe this migration such as Fe, Ni of impurity element
The oxide semiconductor of the oxide of metal.In this manual, also the thin film using this oxide semiconductor to be formed is referred to as
In-Ga-Zn-O class non-single crystalline film.
Even if after carrying out film forming by sputtering method, with 200 DEG C to 500 DEG C, typically carry out with 300 DEG C to 400 DEG C
The heat treatment of 10 points to 100 points, it is also possible to utilize XRD (X-ray diffraction) analysis and observation to the knot of In-Ga-Zn-O class non-single crystalline film
Crystal structure.Furthermore, it is possible to manufacture, there is the thin film transistor (TFT) of following electrical characteristics: when gate voltage be ± 20V time, ON-OFF ratio is
109Above, mobility is more than 10.The thin film transistor (TFT) using the oxide semiconductor film manufacture with this electrical characteristics has
The mobility higher than the thin film transistor (TFT) using non-crystalline silicon to manufacture, it is possible to make the circuit being made up of this thin film transistor (TFT) carry out height
Speed drives.
It addition, form oxide semiconductor layer on gate insulating film by sputtering method, then by photo-mask process or spray
The method of the use of ink and water forms Etching mask on this oxide semiconductor layer, and uses this Etching mask to carry out oxide semiconductor layer
Etching, such that it is able to form oxide semiconductor.As the target for forming oxide semiconductor layer for sputtering method, make
Use In2O3∶ Ga2O3: the target of ZnO=1: 1: 1.Oxide semiconductor is against corrosion for the light carried out in the operation below
The light of the exposure of agent has the light transmission of high-quality, and compared with non-crystalline silicon, can effectively carry out the photosensitive of photoresist.
Dielectric film 7016 can use the single layer structure of the dielectric film with oxygen or nitrogen or laminated construction to be formed, and this has oxygen
Or the dielectric film of nitrogen is such as silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x ＞ y) or silicon oxynitride
(SiNxOy) (x ＞ y) etc..
The single layer structure of conducting film, two-layer or the laminated construction of three layers of conducting film can be used as gate electrode 7017.Make
For the material for gate electrode 7017, it is possible to use conducting film.It is, for example possible to use such as tantalum (Ta), titanium (Ti), molybdenum (Mo),
The simple substance film of the element of tungsten (W), chromium (Cr), silicon (Si) etc.；Nitride film (typically, nitridation tantalum film, the tungsten nitride film of described element
Or titanium nitride film)；It is combined with the alloy film (typically, Mo-W alloy or Mo-Ta alloy) of described element；Or described element
Silicide film (typically, tungsten silicide film or Titanium silicide film) etc..It addition, above-mentioned simple substance film, nitride film, alloy film, silication
Thing film etc. can have single layer structure or laminated construction.
Dielectric film 7018 can be by sputtering method or plasma CVD method etc. and monolayer or the laminated construction using following film
Formed: such as silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x ＞ y) silicon oxynitride (SiNxOy) (x ＞ y) etc.
The dielectric film with oxygen or nitrogen；Or such as the film comprising carbon of DLC (diamond-like-carbon) etc..
Dielectric film 7019 can use the monolayer of following material or laminated construction to be formed: silicone resin；Such as silicon oxide
(SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x ＞ y) or silicon oxynitride (SiNxOy) (x ＞ y) etc. have oxygen or
The dielectric film of nitrogen；The film comprising carbon such as DLC (diamond-like-carbon) etc.；Or such as epoxy, polyimides, polyamide, polyethylene
The organic material of phenol, benzocyclobutene or acrylic acid etc..Additionally, silicone resin is equivalent to comprise the resin of Si-O-Si key.
The framing structure of siloxanes is made up of the key of silicon (Si) and oxygen (O).Organic group (such as alkyl or aromatic hydrocarbons) or fluorine can also be used
Base alternatively base.Can also have fluorine-based as organic group.In addition it is also possible to covering grid electrode 7017 ground directly arranges insulation
Film 7019 and be not provided with dielectric film 7018.
As conducting film 7023, it is possible to use the list of the element of such as Al, Ni, C, W, Mo, Ti, Pt, Cu, Ta, Au, Mn etc.
Plasma membrane, the nitride film of described element, the alloy film combining described element or the silicide film etc. of described element.Such as, as bag
Containing the multiple alloy in described element, it is possible to use the Al alloy, the Al alloy comprising Ni that comprise C and Ti, comprise C's and Ni
Al alloy, comprise the Al alloy etc. of C and Mn.Such as, in the case of using laminated construction, can use and clamp with Mo or Ti etc.
The structure of Al.By using this structure, can improve Al to heat or the toleration of chemical reaction.
Then, the sectional view with reference to the mutually different multiple transistors of its structure shown in Figure 12 A illustrates various structures
Feature.
Transistor 7001 is single drain transistor.Because transistor 7001 can be formed by simple method, so tool
The advantage having low manufacturing cost and high finished product rate.It addition, angle of taper be 45 ° less than 95 °, preferably more than 60 ° and
Less than 95 °.Or, angle of taper can also be less than 45 °.Here, semiconductor layer 7013 and semiconductor layer 7015 have difference
Impurity concentration, semiconductor layer 7013 is used as channel region and semiconductor layer 7015 is used as source region and drain region.By by this way
Control impurity level, the resistivity of semiconductor layer can be controlled.Can be by the electrical connection shape between semiconductor layer and conducting film 7023
State is close to Ohmic contact.It addition, as the method forming impurity level semiconductor layer different from each other respectively, it is possible to use with grid
Electrode 7017 is the mask method to semiconductor layer impurity.
Transistor 7002 is the transistor that its gate electrode 7017 has to a certain degree above bevel angle.Because transistor
7002 can be formed by simple method, so the advantage with low manufacturing cost and high finished product rate.Here, semiconductor layer
7013, the impurity concentration of semiconductor layer 7014 and semiconductor layer 7015 is respectively different, and semiconductor layer 7013 is used as channel region, partly leads
Body floor 7014 is used as low concentration and leaks (LDD) district, and semiconductor layer 7015 is used as source region and drain region.By controlling by this way
Impurity level, can control the resistivity of semiconductor layer.Status of electrically connecting between semiconductor layer and conducting film 7023 can be connect
It is bordering on Ohmic contact.Because transistor includes LDD region, so high electric field is not easy to be applied to transistor internal, and can suppress
Deterioration due to the element that hot carrier causes.It addition, as the method forming the different semiconductor layer of impurity level respectively, permissible
Use the method for mask, semiconductor layer being doped with gate electrode 7017.In transistor 7002, because gate electrode 7017
There is to a certain degree above bevel angle, it is possible to make to be doped to the concentration tool of impurity of semiconductor layer through gate electrode 7017
There is gradient, and easily form LDD region.It addition, angle of taper be 45 ° less than 95 °, preferably 60 ° less than
95°.Or, angle of taper can also be less than 45 °.
Transistor 7003 is the crystalline substance that its gate electrode 7017 is at least made up of two-layer and lower-layer gate electrode is longer than upper strata gate electrode
Body pipe.In this manual, the shape of upper strata gate electrode and lower-layer gate electrode is referred to as hat.When gate electrode 7017 has hat
Time, LDD region is formed with can not adding photomask.Additionally, will as transistor 7003 LDD region overlapping with gate electrode 7017
Structure specially be referred to as GOLD (Gate Overlapped LDD；Gate overlap LDD) structure.As forming the grid with hat
The method of electrode 7017, it is possible to use method below.
First, when gate electrode 7017 is patterned, etch lower-layer gate electrode and upper strata gate electrode by dry ecthing,
Its side view is made to have inclination (taper).Then, by anisotropic etching, processing upper strata gate electrode is so that its inclination angle is near
In vertically.By this operation, form the gate electrode that its cross sectional shape is hat.Then, by the impurity element carrying out twice
Doping, forms the semiconductor layer 7013 being used as channel region, as the semiconductor layer 7014 of LDD region and as source electrode and electric leakage
The semiconductor layer 7015 of pole.
Additionally, the LDD region overlapping with gate electrode 7017 to be referred to as Lov district, and by not overlapping with gate electrode 7017 LDD
District is referred to as Loff district.Here, the effect that Loff district is in terms of suppression cutoff current value is high, and it is by relaxing vicinity
Electric field prevents the effect in terms of the deterioration of turn on current value caused due to hot carrier low.On the other hand, Lov district is passing through
The electric field of mitigation vicinity prevents the effect in terms of the deterioration of turn on current value high, and it is in terms of suppression cutoff current value
Effect low.It is therefore preferable that manufacture the transistor with the structure corresponding to required characteristic in each circuit respectively.Example
As, when as display device, the transistor with Loff district is preferably used as pixel transistor to suppress cutoff current value.
On the other hand, as the transistor in peripheral circuit, the transistor with Lov district is preferably used to relax the electric field of vicinity
Prevent the deterioration of turn on current value.
Transistor 7004 is the transistor of the sidewall 7021 with the contacts side surfaces with gate electrode 7017.Had by transistor
There is sidewall 7021, the region overlapping with sidewall 7021 can be used as LDD region.
Transistor 7005 is the crystal forming LDD (Loff) district by using mask 7022 to be doped semiconductor layer
Pipe.In this way, LDD region can be accurately formed, and the cutoff current value of transistor can be reduced.
Transistor 7006 is the transistor forming LDD (Lov) district by using mask to be doped semiconductor layer.Logical
Cross this mode, can accurately form LDD region, and relax the electric field of the vicinity of transistor, and conducting can be reduced
The deterioration of current value.
It follows that illustrate the example of the manufacture method of transistor with reference to Figure 12 B to Figure 12 G.
Additionally, the structure of transistor and manufacture method are not limited to the structure shown in Figure 12 A to Figure 12 G and manufacture method,
And various structure and manufacture method can be used.
In the present embodiment, by utilize Cement Composite Treated by Plasma to the surface of substrate 7011, the surface of dielectric film 7012,
The surface of semiconductor layer 7013, the surface of semiconductor layer 7014, the surface of semiconductor layer 7015, the surface of dielectric film 7016, absolutely
The surface of velum 7018 or the surface of dielectric film 7019 aoxidize or nitrogenize, and can make semiconductor layer or dielectric film oxidation or nitrogen
Change.So, by utilizing Cement Composite Treated by Plasma to make semiconductor layer or dielectric film aoxidize or nitridation, to maybe this insulation of this semiconductor layer
The modifying surface of film, and the dielectric film finer and close than the dielectric film formed by CVD or sputtering method can be formed.Cause
This, can suppress the defect of such as pin hole etc., and can improve the characteristic etc. of display device.Additionally, will be by carrying out plasma
The dielectric film 7024 that body processes and formed is referred to as Cement Composite Treated by Plasma dielectric film.
Additionally, as sidewall 7021, it is possible to use silicon oxide (SiOx) or silicon nitride (SiNx).As at gate electrode 7017
The side method that forms sidewall 7021, it is, for example possible to use form silicon oxide (SiO being formed after gate electrode 7017x) or
Silicon nitride (SiNx), then by anisotropic etching to silicon oxide (SiOx) or silicon nitride (SiNx) method that is etched of film.
By such method, owing to only can retain silicon oxide (SiO in the side of gate electrode 7017x) or silicon nitride (SiNx) film, institute
So that sidewall 7021 can be formed on the side of gate electrode 7017.
Figure 13 D is the figure of the cross section structure of the cross section structure of the transistor illustrating bottom gate type and capacity cell.
Whole of substrate 7091 is formed the first dielectric film (dielectric film 7092).But it is not limited to this.Also may be used
To be formed without the first dielectric film (dielectric film 7092).First dielectric film has the impurity preventing coming from substrate side to quasiconductor
Layer adversely affects and changes the function of the character of transistor.In other words, the first dielectric film has the function as basement membrane.
Therefore, it can manufacture the transistor that reliability is high.It addition, as the first dielectric film, it is possible to use silicon oxide film, silicon nitride film
Or oxygen silicon nitride membrane (SiOxNy) etc. monolayer or lamination.
First dielectric film is formed the first conductive layer (conductive layer 7093 and conductive layer 7094).Conductive layer 7093 includes
Part as the gate electrode of transistor 7108.Conductive layer 7094 includes the part of the first electrode as capacity cell 7109.
It addition, as the first conductive layer, it is possible to use Ti, Mo, Ta, Cr, W, Al, Nd, Cu, Ag, Au, Pt, Nb, Si, Zn, Fe, Ba, Ge
Deng or the alloy of these elements.Or, it is possible to use include the lamination of these elements (also including alloy).
The second insulating barrier (dielectric film 7104) it is formed with in the way of at least covering the first conductive layer.Second dielectric film is used as
Gate insulating film.It addition, as the second dielectric film, it is possible to use silicon oxide film, silicon nitride film or oxygen silicon nitride membrane (SiOxNy) etc.
Monolayer or lamination.
It addition, as the second dielectric film of the part contacted with semiconductor layer, silicon oxide film is preferably used.This is because half
The reason that the trap level of the interface of conductor layer and the contact of the second dielectric film reduces.
It addition, when the second dielectric film contacts with Mo, silicon oxide film is preferably used as the second of the part contacted with Mo
Dielectric film.This is because silicon oxide film does not make Mo aoxidize.
By photoetching process, ink-jet method, print process etc. with being formed overlappingly with the first conductive layer on the second dielectric film
A part for part is formed with semiconductor layer.A part for semiconductor layer extend on the second dielectric film not with the first conductive layer
Overlapping part.Semiconductor layer includes channel formation region (channel formation region 7100), LDD region (LDD region 7098, LDD region 7099)
And impurity range (impurity range 7095, impurity range 7096, impurity range 7097).Channel formation region 7100 is used as the ditch of transistor 7108
Formation district, road.LDD region 7098 and LDD region 7099 are used as the LDD region of transistor 7108.It addition, be not necessarily required to form LDD region 7098
And LDD region 7099.Impurity range 7095 includes the part as one of the source electrode of transistor 7108 and drain electrode side.Impurity range
7096 include as the source electrode of transistor 7108 and the part of the opposing party of drain electrode.Impurity range 7097 includes as electric capacity unit
The part of the second electrode of part 7109.
The 3rd dielectric film (dielectric film 7101) it is formed with in whole face.Selectivity landform in a part for the 3rd dielectric film
Become to have contact hole.Dielectric film 7101 has the function of interlayer film.As the 3rd dielectric film, it is possible to use inorganic material (oxidation
Silicon, silicon nitride or silicon oxynitride etc.) or there is organic compound material (the photosensitive or organic resin of non-photo-sensing of low-k
Material) etc..Or, it is possible to use comprise the material of siloxanes.It addition, the framing structure of siloxanes is by silicon (Si) and oxygen (O)
Key constitute.Organic group (such as alkyl or aromatic hydrocarbons) or fluorine-based alternatively base can also be used.Or, it is possible to have fluorine-based
As organic group.
3rd dielectric film is formed the second conductive layer (conductive layer 7102 and conductive layer 7103).Conductive layer 7102 passes through
The contact hole being formed in the 3rd dielectric film is connected with the source electrode of transistor 7108 and the opposing party of drain electrode.Therefore, conduction
Layer 7102 includes as the source electrode of transistor 7108 and the part of the opposing party of drain electrode.When conductive layer 7103 and conductive layer
During 7094 connection, conductive layer 7103 includes the part of the first electrode as capacity cell 7109.Or, when conductive layer 7103 with
When impurity range 7097 connects, conductive layer 7103 includes the part of the second electrode as capacity cell 7109.Or, work as conductive layer
7103 when not being connected with conductive layer 7094 and impurity range 7097, forms the capacity cell different from capacity cell 7109.This electric capacity
Element has conductive layer 7103, impurity range 7097 and dielectric film 7101 and is used separately as the first electrode of capacity cell, the second electrode
And the structure of dielectric film.Further, it is possible to use Ti, Mo, Ta, Cr, W, Al, Nd, Cu, Ag, Au, Pt, Nb, Si, Zn, Fe, Ba, Ge
Deng or the alloy of these elements as the second conductive layer.Or, it is possible to use the lamination of these elements (also including alloy).
It addition, in forming the operation after the second conductive layer, could be formed with various dielectric film or various conducting film.
Then, illustrate by non-crystalline silicon (a-Si:H) film or microcrystalline sillicon film etc. for the semiconductor layer of transistor time transistor
And the structure of capacity cell.
Figure 13 A is the figure of the cross section structure illustrating top gate-type transistors and capacity cell.
Whole of substrate 7031 is formed the first dielectric film (dielectric film 7032).First dielectric film has and prevents
From the impurity of substrate side, semiconductor layer is adversely affected and change the function of the character of transistor.In other words, first
Dielectric film has the function of basement membrane.Therefore, it can manufacture the transistor that reliability is high.It addition, as the first dielectric film, permissible
Use silicon oxide film, silicon nitride film or oxygen silicon nitride membrane (SiOxNy) monolayer or lamination.
Additionally, be not necessarily required to form the first dielectric film.In this case, it is possible to reduce the quantity of operation, and can drop
Low manufacturing cost.Because structure can be simplified, it is possible to improve yield rate.
First dielectric film is formed the first conductive layer (conductive layer 7033, conductive layer 7034 and conductive layer 7035).Lead
Electric layer 7033 includes the part as one of the source electrode of transistor 7048 and drain electrode side.Conductive layer 7034 includes as crystal
The source electrode of pipe 7048 and the part of the opposing party of drain electrode.Conductive layer 7035 includes the first electrode as capacity cell 7049
Part.As the first conductive layer, it is possible to use Ti, Mo, Ta, Cr, W, Al, Nd, Cu, Ag, Au, Pt, Nb, Si, Zn, Fe, Ba,
Ge etc. or the alloy of these elements.Or, it is possible to use the lamination of these elements (also including alloy).
Conductive layer 7033 and conductive layer 7034 are formed the first semiconductor layer (semiconductor layer 7036 and semiconductor layer
7037).Semiconductor layer 7036 includes the part as one of source electrode and drain electrode side.Semiconductor layer 7037 includes as source electricity
The part of the opposing party of pole and drain electrode.It addition, as the first semiconductor layer, it is possible to use comprise the silicon etc. of phosphorus etc..
The second semiconductor layer (quasiconductor it is formed with between conductive layer 7033 and conductive layer 7034 and on the first dielectric film
Layer 7038).And, a part for semiconductor layer 7038 extends on conductive layer 7033 and on conductive layer 7034.Semiconductor layer
7038 parts including the channel region as transistor 7048.It addition, as the second semiconductor layer, it is possible to use such as non-crystalline silicon
Etc. (a-Si:H) there is the semiconductor layer etc. of non-crystalline semiconductor layer or microcrystal silicon (μ-Si:H) etc..
Be formed in the way of at least covering semiconductor layer 7038 and conductive layer 7,035 second dielectric film (dielectric film 7039 and
Dielectric film 7040).Second dielectric film has the function as gate insulating film.As the second dielectric film, it is possible to use silicon oxide
Film, silicon nitride film or oxygen silicon nitride membrane (SiOxNy) etc. monolayer or lamination.
It addition, as the second dielectric film of the part contacted with the second semiconductor layer, silicon oxide film is preferably used.This be because of
It it is the reason of the trap level minimizing of the interface of the second semiconductor layer and the contact of the second dielectric film.
It addition, when the second dielectric film contacts with Mo, silicon oxide film is preferably used as the second dielectric film contacted with Mo.
This is because silicon oxide film does not make Mo aoxidize.
Second dielectric film is formed the second conductive layer (conductive layer 7041 and conductive layer 7042).Conductive layer 7041 wraps
Include the part of gate electrode as transistor 7048.Conductive layer 7042 is used as the second electrode or the wiring of capacity cell 7049.Can
To use the alloy of Ti, Mo, Ta, Cr, W, Al, Nd, Cu, Ag, Au, Pt, Nb, Si, Zn, Fe, Ba, Ge etc. or these elements to make
It it is the second conductive layer.Or, it is possible to use the lamination of these elements (also including alloy).
As the operation formed after the second conductive layer, it is also possible to form various dielectric film or various conducting film.
Figure 13 B is the figure of the cross section structure illustrating reciprocal cross shift (bottom gate type) transistor and capacity cell.Especially, Figure 13 B
Shown transistor has the structure of referred to as channel etch type.
Whole of substrate 7051 is formed the first dielectric film (dielectric film 7052).First dielectric film has and prevents
From the impurity of substrate side, semiconductor layer is adversely affected and change the function of the character of transistor.In other words, first
Dielectric film is used as basement membrane.Therefore, it can manufacture the transistor that reliability is high.It addition, as the first dielectric film, it is possible to use oxygen
SiClx film, silicon nitride film or oxygen silicon nitride membrane (SiOxNy) etc. monolayer or lamination.
Additionally, be not necessarily required to form the first dielectric film.In this case, it is possible to reduce the quantity of operation, and can drop
Low manufacturing cost.Because structure can be simplified, yield rate can be improved.
First dielectric film is formed the first conductive layer (conductive layer 7053 and conductive layer 7054).Conductive layer 7053 includes
Part as the gate electrode of transistor 7068.Conductive layer 7054 includes the part of the first electrode as capacity cell 7069.
It addition, as the first conductive layer, it is possible to use Ti, Mo, Ta, Cr, W, Al, Nd, Cu, Ag, Au, Pt, Nb, Si, Zn, Fe, Ba, Ge
Deng or the alloy of these elements.Or, it is possible to use the lamination of these elements (also including alloy).
The second dielectric film (dielectric film 7055) it is formed with in the way of at least covering the first conductive layer.Second dielectric film is used as
Gate insulating film.It addition, as the second dielectric film, it is possible to use silicon oxide film, silicon nitride film or oxygen silicon nitride membrane (SiOxNy) etc.
Monolayer or lamination.
As the second dielectric film of the part contacted with semiconductor layer, silicon oxide film is preferably used.This is because quasiconductor
The reason that the trap level of the interface that layer contacts with the second dielectric film reduces.
It addition, when the second dielectric film contacts with Mo, silicon oxide film is preferably used as the second insulation contacted with Mo
Film.This is because silicon oxide film does not make Mo aoxidize.
By the part overlapping with the first conductive layer on the second dielectric film such as photoetching process, ink-jet method, print process one
It is formed in part with the first semiconductor layer (semiconductor layer 7056).A part for semiconductor layer 7056 extends on the second dielectric film
The part not overlapped to form with the first conductive layer.Semiconductor layer 7056 includes the part of the channel region as transistor 7068.Make
For semiconductor layer 7056, it is possible to use as non-crystalline silicon (a-Si:H) etc. has non-crystalline semiconductor layer, or as microcrystal silicon (μ-
Etc. Si:H) semiconductor layer etc..
A part for first semiconductor layer is formed the second semiconductor layer (semiconductor layer 7057 and semiconductor layer
7058).Semiconductor layer 7057 includes the part as one of source electrode and drain electrode side.Semiconductor layer 7058 includes as source electricity
The part of the opposing party of pole and drain electrode.Further, it is possible to use comprise silicon of phosphorus etc. etc. as the second semiconductor layer.
Second semiconductor layer and the second dielectric film are formed the second conductive layer (conductive layer 7059, conductive layer 7060 and
Conductive layer 7061).Conductive layer 7059 includes the part as one of the source electrode of transistor 7068 and drain electrode side.Conductive layer
7060 include as the source electrode of transistor 7068 and the part of the opposing party of drain electrode.Conductive layer 7061 includes as electric capacity unit
The part of the second electrode of part 7069.Further, it is possible to use Ti, Mo, Ta, Cr, W, Al, Nd, Cu, Ag, Au, Pt, Nb, Si, Zn,
The alloy of Fe, Ba, Ge etc. or these elements is as the second conductive layer.Or, it is possible to use these elements (also include alloy)
Lamination.
It addition, as the operation formed after the second conductive layer, it is also possible to form various dielectric film or various conducting film.
Here, an example of the working procedure feature of channel etch type transistor is described.Identical mask can be used to form first
Semiconductor layer and the second semiconductor layer.Specifically, the first semiconductor layer and the second semiconductor layer are formed continuously.And, use
Identical mask forms the first semiconductor layer and the second semiconductor layer.
Another example of the working procedure feature of channel etch type transistor is described.Form crystal with can not using new mask
The channel region of pipe.Specifically, after forming the second conductive layer, the second conductive layer is used as mask and removes the second quasiconductor
A part for layer.Or, by using the mask identical with the second conductive layer to remove a part for the second semiconductor layer.Then,
The first semiconductor layer being formed under the second semiconductor layer eliminated becomes the channel region of transistor.
Figure 13 C is the figure of the cross section structure illustrating reciprocal cross shift (bottom gate type) transistor and capacity cell.Especially, Figure 13 C
Shown transistor has the structure of referred to as channel protective type (channel stop type).
Whole of substrate 7071 is formed the first dielectric film (dielectric film 7072).This first dielectric film has and prevents
Semiconductor layer is adversely affected and changes the function of the character of transistor by the impurity coming from substrate side.In other words,
First dielectric film is used as basement membrane.Therefore, it can manufacture the transistor that reliability is high.It addition, as the first dielectric film, can make
With silicon oxide film, silicon nitride film or oxygen silicon nitride membrane (SiOxNy) etc. monolayer or lamination.
Additionally, be not necessarily required to form this first dielectric film.In this case, it is possible to reduce the quantity of operation, and permissible
Reduce manufacturing cost.Because structure can be simplified, yield rate can be improved.
First dielectric film is formed the first conductive layer (conductive layer 7073 and conductive layer 7074).Conductive layer 7073 includes
Part as the gate electrode of transistor 7088.Conductive layer 7074 includes the part of the first electrode as capacity cell 7089.
As the first conductive layer, it is possible to use Ti, Mo, Ta, Cr, W, Al, Nd, Cu, Ag, Au, Pt, Nb, Si, Zn, Fe, Ba, Ge etc. or
The alloy of these elements.Or, it is possible to use the lamination of these elements (also including alloy).
The second dielectric film (dielectric film 7075) it is formed with in the way of at least covering the first conductive layer.Second dielectric film is used as
Gate insulating film.It addition, as the second dielectric film, it is possible to use silicon oxide film, silicon nitride film or oxygen silicon nitride membrane (SiOxNy) etc.
Monolayer or lamination.
As the second dielectric film of the part contacted with semiconductor layer, silicon oxide film is preferably used.This is because quasiconductor
The reason that the trap level of the interface that layer contacts with the second dielectric film reduces.
It addition, when the second dielectric film contacts with Mo, silicon oxide film is preferably used as the second dielectric film contacted with Mo.
This is because silicon oxide film does not make Mo aoxidize.
By the part overlapping with the first conductive layer on the second dielectric film such as photoetching process, ink-jet method or print process one
Part is formed the first semiconductor layer (semiconductor layer 7076).A part for semiconductor layer 7078 extends on the second dielectric film
The part not overlapped to form with the first conductive layer.Semiconductor layer 7076 includes the part of the channel region as transistor 7088.
It addition, as semiconductor layer 7076, it is possible to use non-crystalline silicon (a-Si:H) etc. there is non-crystalline semiconductor layer, or microcrystal silicon
The semiconductor layer etc. of (μ-Si:H) etc..
A part for first semiconductor layer is formed the 3rd dielectric film (dielectric film 7082).Dielectric film 7082 has anti-
Only the channel region of transistor 7088 is etched and the function removed.In other words, dielectric film 7082 is used as channel protection film (raceway groove
Stopper film).It addition, as the 3rd dielectric film, it is possible to use silicon oxide film, silicon nitride film or oxygen silicon nitride membrane (SiOxNy) etc.
Monolayer or lamination.
A part for first semiconductor layer and a part for the 3rd dielectric film are formed with the second semiconductor layer (quasiconductor
Layer 7077 and semiconductor layer 7078).Semiconductor layer 7077 includes the part as one of source electrode and drain electrode side.Semiconductor layer
7078 include as source electrode and the part of the opposing party of drain electrode.Silicon including phosphorus etc. etc. can be used as the second quasiconductor
Layer.
Second semiconductor layer is formed the second conductive layer (conductive layer 7079, conductive layer 7080 and conductive layer 7081).
Conductive layer 7079 includes the part as one of the source electrode of transistor 7088 and drain electrode side.Conductive layer 7080 includes being used as crystalline substance
The source electrode of body pipe 7088 and the part of the opposing party of drain electrode.Conductive layer 7081 includes the second electricity as capacity cell 7089
The part of pole.Further, it is possible to use Ti, Mo, Ta, Cr, W, Al, Nd, Cu, Ag, Au, Pt, Nb, Si, Zn, Fe, Ba, Ge etc. or this
The alloy of a little elements is as the second conductive layer.Or, it is possible to use the lamination of these elements (also including alloy).
It addition, as the operation formed after the second conductive layer, it is also possible to form various dielectric film or various conducting film.
Then, the example that Semiconductor substrate is used as be used for manufacturing the substrate of transistor is described.Because using quasiconductor lining
The mobility of the transistor that the end manufactures is high, it is possible to reduce transistor size.As a result, it is possible in increase per unit area
The quantity (raising integrated level) of transistor, and because in same circuit structure, integrated level is the highest, can more reduce substrate
Size, it is possible to reduce manufacturing cost.Furthermore, when using the substrate of same size, integrated level is the highest, can more expand electricity
The scale on road, it is possible to there is higher function when manufacturing cost is roughly equal.Furthermore, due to the inequality of characteristic
Even few, therefore can improve the yield rate of manufacture.It is additionally, since running voltage low, therefore can reduce power consumption.And, by
High in mobility, therefore can carry out high speed operation.
It is arranged on by the way of the circuit that constituted by the transistor of integrated use Semiconductor substrate manufacture is with IC chip etc.
In device, this device is made to have various function.Such as, the transistor manufactured by integrated use Semiconductor substrate constitutes display dress
Peripheral drive circuit (data driver (source electrode driver), scanner driver (gate drivers), timing controller, the figure put
As processing circuit, interface circuit, power circuit, oscillating circuit etc.), size can be manufactured with low cost yield rate highland little, consumption
Electricity is low, it is possible to carry out the peripheral drive circuit of high speed operation.It addition, the transistor that integrated use Semiconductor substrate manufactures is constituted
Circuit can also use the structure of the transistor with single polarity.Thus can make simplified manufacturing process, such that it is able to subtract
Few manufacturing cost.
Additionally, such as the circuit that the transistor of integrated use Semiconductor substrate manufacture is constituted can also be used for display surface
Plate.In more detail, may be used for LCOS (Liquid Crystal OnSilicon；Liquid crystal on silicon) etc. reflective liquid crystal face
Plate, DMD (the DigitalMicromirror Device of integrated small mirror；Digital micro-mirror device) element, EL panel etc..Pass through
Using Semiconductor substrate to manufacture these display floaters, can manufacture size with low cost yield rate highland little, power consumption is low, it is possible to
Carry out the display floater of high speed operation.It addition, display floater includes that being formed at of large scale integrated circuit (LSI) etc. has display
Display floater on the element of the function beyond the driving of panel.
Below, the method using Semiconductor substrate to manufacture transistor is described.As an example, use shown in Figure 14 A to Figure 14 G
Operation manufacture transistor,.
Figure 14 A is shown in the region 7112 of resolution element in Semiconductor substrate 7110, region 7113, dielectric film 7111 (also
Be referred to as field oxide film), p trap 7114.
As Semiconductor substrate 7110, as long as Semiconductor substrate and have no particular limits.It is, for example possible to use have
(GaAs substrate, InP substrate, GaN substrate, SiC serve as a contrast for the single crystal Si substrate of the conductivity type of N-shaped or p-type, compound semiconductor substrate
The end, Sapphire Substrate, ZnSe substrate etc.), use laminating method or SIMOX (Separation by ImplantedOxygen；Note
Enter oxygen isolation) method manufacture SOI (Silicon On Insulator；Silicon-on-insulator) substrate etc..
Figure 14 B illustrates dielectric film 7121, dielectric film 7122.Dielectric film 7121, dielectric film 7122 are such as by carrying out at heat
Reason makes to be arranged on the region 7112 of Semiconductor substrate 7110, the surface oxidation in region 7113, it is possible to use silicon oxide film is formed absolutely
Velum 7121, dielectric film 7122.
Figure 14 C illustrates conducting film 7123, conducting film 7124.
Can use selected from tantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo), aluminum (Al), copper (Cu), chromium (Cr), niobium (Nb) etc.
In element or alloy material with these elements as main component or compound-material form conducting film 7123, conducting film
7124.Or, it is possible to use the metal nitride film making these elements nitrogenize forms conducting film 7123, conducting film 7124.Additionally,
The polysilicon of the impurity element of Doping Phosphorus etc. can also be used, introduce the quasiconductor material with silicide etc. as representative of metal material
Material is formed.
Figure 14 D to Figure 14 G illustrates gate electrode 7130, gate electrode 7131, Etching mask 7132, impurity range 7134, raceway groove
Form district 7133, Etching mask 7135, impurity range 7137, channel formation region the 7136, second dielectric film 7138, wiring 7139.
It addition, the second dielectric film 7138 can pass through CVD or sputtering method etc. and use the monolayer being made up of following material
Structure or laminated construction are arranged: such as silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x ＞ y), silicon oxynitride
(SiNxOy) dielectric film with oxygen or nitrogen of (x ＞ y) etc.；The film comprising carbon such as DLC (diamond-like-carbon) etc.；Epoxy, polyamides
The organic material of imines, polyamide, polyvinyl phenol, benzocyclobutene, acrylic acid etc.；Or the silica such as silicone resin etc.
Alkane material.It addition, silicone compositions is equivalent to comprise the material of Si-O-Si key.The framing structure of siloxanes is by silicon (Si) and oxygen
(O) key is constituted.Organic group (such as alkyl or aromatic hydrocarbons) or fluorine-based alternatively base can be used.Fluorine-based conduct can also be used
Organic group.
Wiring 7139 utilizes CVD or sputtering method etc. and uses the single layer structure being made up of following material or laminated construction to set
Put: selected from aluminum (Al), tungsten (W), titanium (Ti), tantalum (Ta), molybdenum (Mo), nickel (Ni), platinum (Pt), copper (Cu), gold (Au), silver (Ag),
Element in manganese (Mn), neodymium (Nd), carbon (C), silicon (Si) or the alloy material with these elements as main component or compound
Material.Alloy material with aluminum as main component is such as equivalent to aluminum as main component and the material that comprises nickel or be with aluminum
Main component and comprise the alloy material of one or both in nickel and carbon and silicon.As wiring 7139, such as, preferably employ
Barrier film, aluminum silicon (Al-Si) film and the laminated construction of barrier film or barrier film, aluminum silicon (Al-Si) film, titanium nitride film and
The laminated construction of barrier film.It addition, barrier film is equivalent to the thin film being made up of the nitride of titanium, the nitride of titanium, molybdenum or molybdenum.Cause
Resistance for aluminum or aluminum silicon is low and cheap, thus most suitable as the material forming wiring 7139.Such as, when arranging upper strata
During with the barrier layer of lower floor, it is possible to prevent the generation of the hillock of aluminum or aluminum silicon.Such as, when the titanium forming the element high by reproducibility
During the barrier film constituted, even if being formed with relatively thin natural oxide film in crystalline semiconductor film, it is possible to so that this autoxidation
Film reduces.As a result of which it is, wiring 7139 and crystalline semiconductor film can realize good electrical connection and physical connection.
Additionally, the structure of transistor is not limited to the structure of diagram.It is for instance possible to use reverse stagger structure, FinFET (fin
Formula field-effect transistor) transistor arrangement of structure etc..Preferably employ FinFET structure, because can suppress by transistor size
The short-channel effect that causes of miniaturization.
It is explained above the structure of transistor and the manufacture method of transistor.Here, wiring, electrode, conductive layer, conduction
Film, terminal, path, plug etc. are preferably made up of following material: select free aluminum (Al), tantalum (Ta), titanium (Ti), molybdenum (Mo), tungsten
(W), neodymium (Nd), chromium (Cr), nickel (Ni), platinum (Pt), gold (Au), silver (Ag), copper (Cu), magnesium (Mg), scandium (Sc), cobalt (Co), zinc
(Zn), in the group that niobium (Nb), silicon (Si), phosphorus (P), boron (B), arsenic (As), gallium (Ga), indium (In), stannum (Sn), oxygen (O) are constituted
One or more elements；Compound with one or more elements in described group as composition or alloy material (such as indium
Tin-oxide (ITO), indium-zinc oxide (IZO), comprise the indium tin oxide (ITSO) of silicon oxide, zinc oxide (ZnO), stannum oxide
(SnO), stannum oxide cadmium (CTO), aluminum neodymium (Al-Nd), magnesium silver (Mg-Ag), molybdenum niobium etc. (Mo-Nb) etc.).Or, wiring, electrode,
Conductive layer, conducting film, terminal etc. preferably have the material etc. combining these compounds.Or, preferably there is following material:
One or more elements in described group and the compound (silicide) (such as aluminum silicon, molybdenum silicon, nickel silicide etc.) of silicon；Choosing
One or more elements in described group and nitrogen compound (such as titanium nitride, tantalum nitride, molybdenum nitride etc.).
It addition, silicon (Si) can also comprise p-type impurity (phosphorus etc.) or n-type impurity (boron etc.).By impurity is included in silicon
In, conductivity can be improved, and this silicon can play the effect identical with common conductor.Therefore, it can easily be used as
Wiring or electrode etc..
It addition, silicon can be monocrystalline, polycrystalline (polysilicon), crystallite (microcrystal silicon) etc. there is various crystalline silicon.Or
Person, silicon can also be amorphous (non-crystalline silicon) etc. there is no crystalline silicon.By using monocrystal silicon or polysilicon, cloth can be reduced
The resistance of line, electrode, conductive layer, conducting film, terminal etc..By using non-crystalline silicon or microcrystal silicon, can be with simple operation shape
Become wiring etc..
Owing to the conductivity of aluminum or silver is high, signal delay therefore can be reduced.Furthermore, owing to aluminum or silver are easily lost
Carve, be the most easily patterned, it is possible to carry out fine processing.
Owing to the conductivity of copper is high, signal delay therefore can be reduced.When using copper, it is preferred to use laminated construction is to carry
High compactness.
Molybdenum or titanium are preferred, this is because they have the advantage that make to be contacted with oxide semiconductor (ITO,
IZO etc.) or silicon, also will not produce bad；Easily it is etched；Thermostability is high.
Tantalum has the advantage that thermostability is high, so being preferred.
Neodymium has the advantage that thermostability is high, so being preferred.Particularly, the thermostability when using the alloy of neodymium and aluminum
Improve, so aluminum is not easy to produce hillock.
Silicon has the advantage that semiconductor layer concurrently forms, thermostability is high as being had with transistor, so being
Preferably.
It addition, ITO, IZO, ITSO, zinc oxide (ZnO), silicon (Si), stannum oxide (SnO), stannum oxide cadmium (CTO) have
Photosensitiveness, and may be used for the part of transmission light.Such as, they can be used as pixel electrode or public electrode.
Furthermore it is preferred that use IZO, because IZO being easily etched and being easily worked.IZO is not easy to cause when erosion
The problem leaving dregs during quarter.Therefore, by using IZO as pixel electrode, it is possible to reduce to liquid crystal cell or light-emitting component
Bad (short circuit, the orientation disorder etc.) brought.
Additionally, wiring, electrode, conductive layer, conducting film, terminal, path, plug etc. can also be tied by single layer structure or lamination
Structure is constituted.By using single layer structure, can simplify and manufacture the operation of wiring, electrode, conductive layer, conducting film, terminal etc. and subtract
Few making step and time, this can realize cost and reduce.Or, by using multiple structure, it is possible to use various materials
Advantage and reduce its shortcoming, such that it is able to form high-performance wiring or electrode etc..For example, by wrapping in multiple structure
Containing low electrical resistant material (aluminum etc.), it is possible to achieve the low resistance of wiring.As another example, by using low heat resistant material quilt
The laminated construction being clipped between high heat resistance, it is possible to use the advantage of low heat resistant material and improve wiring or electrode etc.
Thermostability.For example, it is preferable to use the layer comprising aluminum to be sandwiched in the laminated construction between the layer comprising molybdenum, titanium, neodymium etc..
Here, in the case of wiring or electrode etc. are in direct contact with one another, they may become negatively affected each other.Example
As, a wiring or electrode etc., possibly into changing its character in the material of another wiring or electrode etc., therefore can not be sent out
Wave original effect.As another example, when forming or manufacture high resistance department timesharing, sometimes there is problem and can not be normally
Manufacture.In such a situation it is preferred to use laminated construction will easily to cause the material clip of reaction at the material being not easy to cause reaction
Between material, or, use the material being not easy to cause reaction to cover the material easily causing reaction.Such as, ITO and aluminum are being connected
In the case of, between ITO and aluminum, preferably insert titanium, molybdenum or neodymium alloy.As another example, connecting silicon and the situation of aluminum
Under, between silicon and aluminum, preferably insert titanium, molybdenum or neodymium alloy.
Wiring refers to be configured with the material of electric conductor.Wiring shape can be wire, it is also possible to be not wire but short
's.Therefore, wiring includes electrode.
As wiring, electrode, conductive layer, conducting film, terminal, path, plug etc., it is possible to use CNT.Due to
CNT has light transmission, it is possible to it is used for the part of transmission light.For example, it is possible to be used as pixel electrode or public affairs
Common electrode.
It addition, be described with reference to various accompanying drawings in the present embodiment.The content described in the drawings (can also be
Part thereof of content) to the content (can also be part thereof of content) described in other accompanying drawing, other embodiment party
Content (can also be part thereof of content) described in formula can freely carry out applying, combine or displacement etc..Furthermore,
In above-mentioned accompanying drawing, each several part can be combined other parts, the part of other embodiment.
Embodiment 4
In the present embodiment, the example possessing the electronic equipment of the display device illustrated by above-mentioned embodiment is described.
Figure 15 A to Figure 15 H, Figure 16 A to Figure 16 D are the figures illustrating electronic equipment.These electronic equipments can have shell
5000, display part 5001, speaker 5003, LED 5004, operated key 5005, connection terminal 5006, sensor 5007 (its bag
Include the function of the factor of being determined as follows: strength, displacement, position, speed, acceleration, angular velocity, rotation number, distance, light, liquid, magnetic,
Temperature, chemical substance, sound, the time, hardness, electric field, electric current, voltage, electric power, ray, flow, humidity, gradient, vibration,
Abnormal smells from the patient or infrared ray), mike 5008 etc..
Figure 15 A illustrates mobile computer, can also have switch 5009, infrared port 5010 etc. in addition to the foregoing.Figure
15B illustrates the portable image transcriber (such as DVD transcriber) possessing record medium, can also have in addition to the foregoing
Second display part 5002, record medium reading unit 5011 etc..Figure 15 C illustrates goggle type display, the most also may be used
To have the second display part 5002, supporting part 5012, earphone 5013 etc..Figure 15 D illustrates portable game machine, in addition to the foregoing
Can also have record medium reading unit 5011 etc..Figure 15 E illustrates projector apparatus, can also have light source in addition to the foregoing
5033, projection lens 5034 etc..Figure 15 F illustrates portable game machine, can also have the second display part in addition to the foregoing
5002, record medium reading unit 5011 etc..Figure 15 G illustrates radiotelevisor, can also have tuner, figure in addition to the foregoing
As process portion etc..Figure 15 H illustrates portable television receiver, and can also have in addition to the foregoing can the charging of receiving and transmitting signal
Device 5017 etc..Figure 16 A illustrates display, can also have support platform 5018 etc. in addition to the foregoing.Figure 16 B illustrates camera, removes
External connection port 5019, shutter release button 5015, an image-receptive portion 5016 etc. can also be had beyond above-mentioned.Figure 16 C illustrates
Computer, can also have positioner 5020, external connection port 5019, read write line 5021 etc. in addition to the foregoing.Figure 16 D
Mobile phone is shown, can also have antenna 5014, single band for mobile phone and mobile terminal in addition to the foregoing
Play (one-segment broadcasting) partly reception tuner etc..
Electronic equipment shown in Figure 15 A to Figure 15 H, Figure 16 A to Figure 16 D can have various function.For example, it is possible to have
Following function: various information (still image, dynamic image, character image etc.) are shown on display part；Contact panel；Display
Calendar, date or moment etc.；By utilizing various software (program) control to process；Carry out radio communication；By utilizing channel radio
Telecommunication function, is connected with various computer networks；By utilizing radio communication function, carry out transmission or the reception of various data；Read
Go out the program stored in the recording medium or it is shown on display part by data；Etc..Furthermore, there is multiple display part
Electronic equipment in, can have a following function: a display part primary display image information, and another display part mainly shows
Word message；Or, on multiple display parts, display shows stereo-picture in view of the image of parallax；Etc..Furthermore, at tool
Have in the electronic equipment in image-receptive portion, can have following function: shoot still image；Shooting dynamic image；To captured
Image automatically or manually correct；Captured image is stored in record medium (outside or be built in camera)；Will
Captured image shows on display part；Etc..Additionally, the electronic equipment shown in Figure 15 A to Figure 15 H, Figure 16 A to Figure 16 D
The function that can have is not limited to above-mentioned functions, and can have various function.
Below, the example application possessing the electronic equipment of display device is described.
Figure 16 E represents the example that display device and building are set to one.Figure 16 E includes shell 5022, display part
5023, as the remote control unit 5024 of operating portion, speaker portion 5025 etc..Display device becomes with building in the way of wall hanging
One and bigger space can be need not and arrange.
Figure 16 F represents another example that display device and building are set in building one.Display floater
5026 are incorporated in bathroom 5027, and the people having a bath can watch display floater 5026.
In the present embodiment, wall, bathroom are enumerated as building.But, present embodiment is not limited to this.Display dress
Put and may be mounted on various building.
Below, represent and display device and mobile object are set to example integrally.
Figure 16 G represents the example that display device and automobile are set to one.Display floater 5028 is incorporated into automobile
Car body 5029, and the work of car body can be shown as required or from vehicle body or the information of outside input.Alternatively, it is also possible to
There is navigation feature.
Figure 16 H represents the example that display device and trip's passenger plane are set to one.Figure 16 H represents by display floater
Shape during display floater 5031 is used in the case of on ceiling 5030 above the seat of 5031 trip's of being arranged on passenger planes.
Display floater 5031 is incorporated into ceiling 5030 by hinge 5032, and passenger can see because hinge 5032 is flexible
See display panel 5031.Display panel 5031 has the operation by passenger and shows the function of information.
It addition, in the present embodiment, enumerate automobile, aircraft as mobile object, but be not limited to this and can arrange
Various mobile objects such as motorcycle, automatic carriage (including automobile, bus etc.), electric car (including single track, railway etc.),
And ship etc..
It addition, be described with reference to various accompanying drawings in the present embodiment.The content described in the drawings (can also be
Part thereof of content) to the content (can also be part thereof of content) described in other accompanying drawing, other embodiment party
Content (can also be part thereof of content) described in formula can freely carry out applying, combine or displacement etc..Furthermore,
In above-mentioned accompanying drawing, each several part can be combined other parts, the part of other embodiment.Therefore, by by above-mentioned embodiment party
The display device of formula explanation is used as the display part of electronic equipment, it is possible to achieve the minimizing that picture quality is bad.
Claims (20)
1. a display device, including:
Pixel, this pixel includes:
Transistor；
Correcting circuit, it is electrically connected to the first terminal of described transistor, the second terminal and gate terminal, and is configured to be supplied to
There is video voltage and for the threshold value electricity remaining applied between the described gate terminal of described transistor and described the first terminal
Pressure and described video voltage；
First switch, it is electrically connected to the described the first terminal of described transistor, and is disposed for controlling and being supplied to first
The electrical connection of the first wiring of current potential；
Second switch, it is electrically connected to the described the first terminal of described transistor, and is disposed for controlling and being supplied to second
The electrical connection of the second wiring of current potential；
Light-emitting component, it has the first terminal being electrically connected to described correcting circuit and the second end being electrically connected to the 3rd wiring
Son；And
3rd switch, the current potential being configured to connect up the 4th introduces described pixel,
Wherein, described correcting circuit includes the 4th switch, the 5th switch and the 6th switch, the first capacitor and the second capacitor,
Wherein, the first terminal of described 3rd switch is connected to the first terminal of described 4th switch, described first capacitor
One electrode and an electrode of described second capacitor,
Wherein, the second terminal of described 4th switch is connected to the described the first terminal of described transistor and described second electric capacity
Another electrode of device,
Wherein, another electrode of described first capacitor is connected to the first terminal of described 5th switch and described transistor
Described gate terminal,
Wherein, the second terminal of described 5th switch is connected to described second terminal of described transistor and described 6th switch
The first terminal,
Wherein, the second terminal of described 6th switch is connected to the anode of described light-emitting component,
Wherein said second current potential is higher than described first current potential,
Wherein during voltage procedures, described first switchgear distribution is conducting, and described second switch is configured to cut-off, and
Wherein, during luminescence, described first switchgear distribution is cut-off, and described second switch is configured to conducting.
Display device the most according to claim 1, wherein said first wiring width ratio described in second wiring width
Greatly.
Display device the most according to claim 1, the width of wherein said first wiring and the width of described second wiring
Color elements according to described light-emitting component and different.
Display device the most according to claim 1, wherein by described display device applications in electronic equipment.
Display device the most according to claim 4, wherein said electronic equipment is selected from personal computer, digital camera, takes the photograph
The group that camera, portable data assistance, navigation system, electronic game machine and recording medium reproducing are constituted with player.
Display device the most according to claim 5, wherein said portable data assistance is selected from mobile computer, mobile electricity
The group that words and e-book are constituted.
7. a display device, including:
Pixel, this pixel includes:
Transistor；
Correcting circuit, it is electrically connected to the first terminal of described transistor, the second terminal and gate terminal, and is configured to be supplied to
There is video voltage and for the threshold value electricity remaining applied between the described gate terminal of described transistor and described the first terminal
Pressure and described video voltage；
First switch, it is electrically connected to the described the first terminal of described transistor, and is disposed for controlling and being supplied to first
The electrical connection of the first wiring of current potential；
Second switch, it is electrically connected to the described the first terminal of described transistor, and is disposed for controlling and being supplied to second
The electrical connection of the second wiring of current potential；
Light-emitting component, it has the first terminal being electrically connected to described correcting circuit and the second end being electrically connected to the 3rd wiring
Son；And
3rd switch, the current potential being configured to connect up the 4th introduces described pixel,
Wherein, described correcting circuit includes the 4th switch, the 5th switch and the 6th switch, the first capacitor and the second capacitor,
Wherein, the first terminal of described 3rd switch is connected to the first terminal of described 4th switch, described first capacitor
One electrode and an electrode of described second capacitor,
Wherein, the second terminal of described 4th switch is connected to the described the first terminal of described transistor and described second electric capacity
Another electrode of device,
Wherein, another electrode of described first capacitor is connected to the first terminal of described 5th switch and described transistor
Described gate terminal,
Wherein, the second terminal of described 5th switch is connected to described second terminal of described transistor and described 6th switch
The first terminal,
Wherein, the second terminal of described 6th switch is connected to the anode of described light-emitting component,
Wherein, described 3rd wiring is also connected electrically to described correcting circuit,
Wherein said second current potential is higher than described first current potential,
Wherein during voltage procedures, described first switchgear distribution is conducting, and described second switch is configured to cut-off, and
Wherein, during luminescence, described first switchgear distribution is cut-off, and described second switch is configured to conducting.
Display device the most according to claim 7, wherein said first wiring width ratio described in second wiring width
Greatly.
Display device the most according to claim 7, the width of wherein said first wiring and the width of described second wiring
Color elements according to described light-emitting component and different.
Display device the most according to claim 7, wherein by described display device applications in electronic equipment.
11. display devices according to claim 10, wherein said electronic equipment selected from personal computer, digital camera,
The group that video camera, portable data assistance, navigation system, electronic game machine and recording medium reproducing are constituted with player.
12. display devices according to claim 11, wherein said portable data assistance is selected from mobile computer, movement
The group that phone and e-book are constituted.
13. 1 kinds of display devices, including:
Pixel, this pixel includes:
Transistor；
Correcting circuit, it is electrically connected to the first terminal of described transistor, the second terminal and gate terminal, and is configured to be supplied to
There is video voltage and for the threshold value electricity remaining applied between the described gate terminal of described transistor and described the first terminal
Pressure and described video voltage；
First switch, it is electrically connected to the described the first terminal of described transistor, and is disposed for controlling and being supplied to first
The electrical connection of the first wiring of current potential；
Second switch, it is electrically connected to the described the first terminal of described transistor, and is disposed for controlling and being supplied to second
The electrical connection of the second wiring of current potential；
Light-emitting component, it has the first terminal being electrically connected to described correcting circuit and the second end being electrically connected to the 3rd wiring
Son；
3rd switch, the current potential being configured to connect up the 4th introduces described pixel；And
It is electrically connected to the 5th wiring of described correcting circuit,
Wherein, described correcting circuit includes the 4th switch, the 5th switch and the 6th switch, the first capacitor and the second capacitor,
Wherein, the first terminal of described 3rd switch is connected to the first terminal of described 4th switch, described first capacitor
One electrode and an electrode of described second capacitor,
Wherein, the second terminal of described 4th switch is connected to the described the first terminal of described transistor and described second electric capacity
Another electrode of device,
Wherein, another electrode of described first capacitor is connected to the first terminal of described 5th switch and described transistor
Described gate terminal,
Wherein, the second terminal of described 5th switch is connected to described second terminal of described transistor and described 6th switch
The first terminal,
Wherein, the second terminal of described 6th switch is connected to the anode of described light-emitting component,
Wherein said second current potential is higher than described first current potential,
Wherein during voltage procedures, described first switchgear distribution is conducting, and described second switch is configured to cut-off, and
Wherein, during luminescence, described first switchgear distribution is cut-off, and described second switch is configured to conducting.
14. display devices according to claim 13, wherein said first wiring width ratio described in second wiring width
Degree is big.
15. display devices according to claim 13, the width of wherein said first wiring and the width of described second wiring
Spend different according to the color elements of described light-emitting component.
16. display devices according to claim 13, wherein by described display device applications in electronic equipment.
17. display devices according to claim 16, wherein said electronic equipment selected from personal computer, digital camera,
The group that video camera, portable data assistance, navigation system, electronic game machine and recording medium reproducing are constituted with player.
18. display devices according to claim 17, wherein said portable data assistance is selected from mobile computer, movement
The group that phone and e-book are constituted.
The driving method of 19. 1 kinds of display devices, this display device includes:
Pixel, this pixel includes:
Transistor；
Correcting circuit, it is electrically connected to the first terminal of described transistor, the second terminal and gate terminal, and is configured to be supplied to
Have video voltage and for remain applied in the capacitor the described gate terminal of described transistor and described the first terminal it
Between threshold voltage and from holding wire by select switch supply described video voltage；
First switch, it is electrically connected to the described the first terminal of described transistor, and is disposed for controlling and being supplied to first
The electrical connection of the first wiring of current potential；
Second switch, it is electrically connected to the described the first terminal of described transistor, and is disposed for controlling and being supplied to second
The electrical connection of the second wiring of current potential；
Light-emitting component, it has the first terminal being electrically connected to described correcting circuit and the second end being electrically connected to the 3rd wiring
Son；And
3rd switch, the current potential being configured to connect up the 4th introduces described pixel；
Wherein, described correcting circuit includes the 4th switch, the 5th switch and the 6th switch, the first capacitor and the second capacitor,
Wherein, the first terminal of described 3rd switch is connected to the first terminal of described 4th switch, described first capacitor
One electrode and an electrode of described second capacitor,
Wherein, the second terminal of described 4th switch is connected to the described the first terminal of described transistor and described second electric capacity
Another electrode of device,
Wherein, another electrode of described first capacitor is connected to the first terminal of described 5th switch and described transistor
Described gate terminal,
Wherein, the second terminal of described 5th switch is connected to described second terminal of described transistor and described 6th switch
The first terminal,
Wherein, the second terminal of described 6th switch is connected to the anode of described light-emitting component,
Wherein said second current potential is higher than described first current potential,
Described method comprises the steps:
During voltage procedures, make described first switch conduction and make described second switch end；And
During luminescence, make described first switch cut-off and make described second switch turn on, and making described light-emitting component luminous.
The driving method of 20. display devices according to claim 19, wherein changes and is applied to the described of described transistor
Voltage between gate terminal and described the first terminal corrects the mobility of described transistor.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
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| JP2008-309273 | 2008-12-04 | ||
| JP2008309273 | 2008-12-04 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1472721A (en) * | 2002-07-31 | 2004-02-04 | ������������ʽ���� | Electronic circuit and driving mehtod thereof, photoelectric device and its driving method and electronic device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1472721A (en) * | 2002-07-31 | 2004-02-04 | ������������ʽ���� | Electronic circuit and driving mehtod thereof, photoelectric device and its driving method and electronic device |
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