CN101827954B - 经涂覆基材及包含该基材的半导体组件 - Google Patents
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Abstract
一种光伏电池可包括具有透明导电氧化物层和抗反射层的基材。这些层可通过溅镀或通过化学气相沉积来沉积。
Description
本申请要求于2008年9月5日提出的第61/094,602号美国临时申请的优先权，在此将该临时申请并入本文以供参考。
技术领域
本发明涉及涂覆技术及经涂覆基材。
背景技术
经涂覆的玻璃对象在本技术领域中是已知的。已存在有许多对玻璃对象涂覆多层的技术，包括溅镀、化学气相沉积(CVD)、物理汽气相沉积(PVD)及其它技术。溅镀可包括由于通过高能离子对标靶进行轰击而使原子自固态标靶材料喷射的制造过程。在典型的CVD制造过程中，基材可暴露于一种或多种在该基材表面反应和/或分解的挥发性前驱物，以产生所期望的沉积材料。通常也产生挥发性副产物，其通过反应室的气体流而被去除。
理想的是涂覆基材的两侧。考虑到加工时间和成本支出，理想的是在未使基材多次通过装置来涂覆基材的两侧。因此，可看出在本技术领域中仍需要这样一种装置，此装置能够在不必使基材通过此装置超过一次的情况下，涂覆基材的两侧。
发明内容
一般而言，一种制造光学组件基材的方法可包括以下步骤：通过化学气相沉积在所述基材的第一表面上沉积抗反射层；通过溅镀在所述基材的第二表面上沉积透明导电层。所述光学组件可为CdTe薄膜光伏组件。抗反射层沉积可在透明导电层沉积之前发生、在透明导电层沉积之后发生，或者实质上与透明导电层沉积同时发生。
一种制造光学组件基材的方法可包括以下步骤：在生产线的第一沉积站通过化学气相沉积在所述玻璃基材的外表面上沉积抗反射层；在所述生产线的第二沉积站通过溅镀在所述玻璃基材的内表面上沉积透明导电层，其中，所述第一沉积站是沉积反应室的第一部分，其中，所述第二沉积站是所述沉积反应室的第二部分，其中，所述沉积反应室的第一部分是所述沉积反应室的下部，其中，所述沉积反应室的第二部分是所述沉积反应室的上部，其中，沉积抗反射层的步骤实质上与沉积透明导电层的步骤同时发生。
一种光学组件基材可包括：基材；与所述基材的第一表面接触的溅镀的透明导电层；与所述基材的第二表面接触的抗反射层。在特定的情况中，基材可为玻璃基材。所述光学组件基材可用于光伏电池，且该光伏电池可为CdTe薄膜光伏组件。所述透明导电层可为铟锡氧化物。
一种光学组件基材可包括：基材；与所述基材的第一表面接触的溅镀的透明导电层；邻近于所述透明导电层的活性光伏层；与所述基材的第二表面接触的抗反射层。在特定的情况中，基材可为玻璃基材。所述光学组件基材可用于光伏电池，且该光伏电池可为CdTe薄膜光伏组件。所述透明导电层可为铟锡氧化物。
在下面的附图和说明中阐述了一个或多个实施例的细节。根据描述和附图，并根据权利要求书，其他特征、目的和优点将是明显的。
附图说明
图1是具有多层的基材的示意图；
图2是两阶段沉积系统的示意图；
图3是两阶段沉积系统的示意图；
图4是单阶段沉积系统的示意图；
图5是单阶段沉积系统的示意图。
具体实施方式
参考第1图，光伏电池可包括透明导电层120。透明导电层120可以为透明导电氧化物，其可包括例如铟锡氧化物。透明导电层120沉积在基材100上。基材100可以为例如玻璃。该光伏电池还可包括沉积在基材100的另一侧上的抗反射层130。抗反射涂层130可为非常薄的二层堆栈物。透明导电氧化物膜120可为掺氟氧化锡、掺铝氧化锌或铟锡氧化物等等。
在制造期间，当玻璃离开退火窑时，可使用化学气相沉积将抗反射涂层施覆至该基材。或者，在半导体层的沉积期间，可经由化学气相沉积添加抗反射涂层，或可在半导体层的沉积之后添加抗反射涂层。化学气相沉积可为例如大气压化学气相沉积系统、低压化学气相沉积系统或超高真空化学气相沉积系统。也可使用物理气相沉积将抗反射涂层施覆至该基材。物理气相沉积可涉及单纯物理过程，例如高温真空蒸发或电浆溅镀轰击。
参考第2图，两阶段系统可包括初始化学气相沉积反应室200，初始化学气相沉积反应室200使抗反射涂层沉积在玻璃基材210上。基材210在输送机220上行进通过初始反应室200。接下来，后续反应室230使用溅镀将透明导电氧化物层沉积在基材210上。基材210沿着输送机220持续通过后续反应室230。或者，溅镀反应室230可为该初始反应室，而该化学气相沉积反应室200可为该后续反应室。
参考图3，两阶段系统可包括初始溅镀反应室300，初始溅镀反应室300使抗反射涂层沉积在玻璃基材310上。如上文中所述，基材310在输送机320上行进通过初始反应室300。接下来，后续反应室330使用溅镀将透明导电氧化物层沉积在基材310上。该基材310沿着输送机320持续通过该后续反应室330。或者，该透明导电氧化物溅镀反应室330可为该初始反应室，而该抗反射溅镀反应室300可为该后续反应室。
参考图4，单阶段系统可包括反应室410下方的化学气相沉积部400，化学气相沉积部400将抗反射涂层沉积在玻璃基材420上。反应室410的上方部430使用溅镀将透明导电氧化物层沉积在基材420上。基材420在输送机440上行进通过反应室410。参考图5，单阶段系统可包括反应室510下方的溅镀部500，溅镀部500将抗反射涂层沉积在玻璃基材520上。反应室510的上方部530使用溅镀将透明导电氧化物层沉积在基材520上。基材520在输送机540上行进通过反应室510。
普通的光伏电池可具有多层。该多层可包括作为透明导电层的底层、覆盖层、窗口层、吸收层和顶层。每一层可在生产线的不同沉积站，根据需求利用每一沉积站的单独沉积气体供应源及真空密封的沉积反应室来沉积。基材可经由辊式输送机由沉积站转移至沉积站，直至沉积所有期望的层为止。顶部基材层可放置在顶层的顶部，以形成夹层物且完成该光伏电池。
在光伏组件制造中的半导体层的沉积描述于例如美国专利第5,248,349、5,372,646、5,470,397、5,536,333、5,945,163、6,037,241和6,444,043号中，其各自并入本文中以供参考。沉积可涉及蒸气从源端到基材的输送，或固体在封闭系统中的升华。用于制造光伏电池的装置可包括输送机，例如具有辊的辊式输送机。也可以用其它形式的输送机。输送机将每一基材输送至一系列的一个或多个沉积站，以供在该基材的暴露表面上沉积多个材料层。输送机描述于2007年3月28日提出申请的第11/692,667号美国专利申请，其并入本文中以供参考。
沉积反应室可加热至达到不低于大约450℃且不超过大约700℃的加工温度，例如温度范围可为450℃-550℃、550℃-650℃、570℃-600℃、600℃-640℃或任何其它大于约450℃及小于约700℃的温度范围。沉积反应室包括连接至沉积蒸气供应源的沉积分布器。此分布器可连接至多个蒸气供应源，以沉积不同的层，或该基材可移动通过多个且不同的沉积站，这些沉积站各自具有自己的蒸气分布器及供应源。分布器可为喷头几何变化的喷嘴形式，以促进蒸气供应源的均匀分布。
窗口层和吸收层可包括例如二元半导体，例如第II-VI、III-V或IV族半导体，例如ZnO、ZnS、ZnSe、ZnTe、CdO、CdS、CdSe、CdTe、MgO、MgS、MgSe、MgTe、HgO、HgS、HgSe、HgTe、MnO、MnS、MnTe、AlN、AlP、AlAs、AlSb、GaN、GaP、GaAs、GaSb、InN、InP、InAs、InSb、TlN、TlP、TlAs、TlSb或它们的混合物。窗口层和吸收层的示例为被CdTe层涂覆的CdS层。顶层可覆盖该半导体层。顶层可包括金属，例如铝、钼、铬、钴、镍、钛、钨或它们的合金。该顶层也可包括金属氧化物或金属氮化物或它们的合金。
光伏电池的底层可为透明导电层。薄的覆盖层可在该透明导电层的顶部上且至少部分覆盖该透明导电层。下一个沉积层为第一半导体层，其可用作窗口层且可基于透明导电层及覆盖层的使用而更薄。下一个沉积层为第二半导体层，其用作吸收层。根据需要，在整个制造过程中可将其它层(例如包括掺杂剂的层)沉积或放置在基材上。
透明导电层可为透明导电氧化物，例如类似氧化锡的金属氧化物，透明导电氧化物可掺杂例如氟。此层可沉积在前接触与第一半导体层之间，且可具有足够高的电阻，以降低第一半导体层中的针孔效应。在第一半导体层中的针孔可造成在第二半导体层和第一接触之间形成分流，进而造成环绕针孔的局部电场上的漏极。该路径的电阻的小量增加可大幅地降低受到分流影响的区域。
可设置覆盖层以供应该电阻的增加。覆盖层可为具有高化学稳定性的非常薄的材料层。与具有相同厚度之可相比的半导体材料厚度相较，覆盖层可具有较高的透明性。适合用作覆盖层的材料的例子包括二氧化硅、三氧化二铝、二氧化钛、三氧化二硼及其它类似物。覆盖层也可用于将透明导电层与第一半导体层电学地且化学地分离开，以避免在高温下发生可负面地影响性能和稳定性的反应。覆盖层也可提供导电表面，导电表面可更适合用于接受第一半导体层的沉积。举例而言，覆盖层可提供表面粗糙度减小的表面。
第一半导体层可用作第二半导体层的窗口层。第一半导体层可比第二半导体层薄。因为第一半导体层较薄，所以可以使较短波长的入射光穿透至第二半导体层。
第一半导体层可为第II-VI、III-V或IV族半导体，例如ZnO、ZnS、ZnSe、ZnTe、CdO、CdS、CdSe、CdTe、MgO、MgS、MgSe、MgTe、HgO、HgS、HgSe、HgTe、MnO、MnS、MnTe、AlN、AlP、AlAs、AlSb、GaN、GaP、GaAs、GaSb、InN、InP、InAs、InSb、TlN、TlP、TlAs、TlSb或它们的混合物或合金。第一半导体层可为二元半导体，例如可为CdS。第二半导体层可沉积在第一半导体层上。当第一半导体层用作窗口层时，第二半导体可用作入射光的吸收层。类似于第一半导体层，第二半导体层也可为第II-VI、III-V或IV族半导体，例如ZnO、ZnS、ZnSe、ZnTe、CdO、CdS、CdSe、CdTe、MgO、MgS、MgSe、MgTe、HgO、HgS、HgSe、HgTe、MnO、MnS、MnTe、AlN、AlP、AlAs、AlSb、GaN、GaP、GaAs、GaSb、InN、InP、InAs、InSb、TlN、TlP、TlAs、TlSb或它们的混合物。
第二半导体层可沉积在第一半导体层上。覆盖层可用于将透明导电层与第一半导体层电学地且化学地分离开，以避免在高温下发生可负面地影响性能和稳定性的反应。透明导电层可沉积在基材上。
已描述了许多实施例。然而，应了解的是，在未偏离本发明的精神和范围的情况下，可进行各种不同的改变。举例而言，半导体层可包括各种不同的其它材料，如同这些材料可用于缓冲层和覆盖层一样。因此，其它实施例也落于权利要求的范围内。
Claims (5)
1.一种制造具有玻璃基材的光伏组件的方法，包括以下步骤：
在生产线的第一沉积站通过化学气相沉积在所述玻璃基材的外表面上沉积抗反射层；
在所述生产线的第二沉积站通过溅镀在所述玻璃基材的内表面上沉积透明导电层，
其中，所述第一沉积站是沉积反应室的第一部分，其中，所述第二沉积站是所述沉积反应室的第二部分，
其中，所述沉积反应室的第一部分是所述沉积反应室的下部，其中，所述沉积反应室的第二部分是所述沉积反应室的上部，
其中，沉积抗反射层的步骤实质上与沉积透明导电层的步骤同时发生。
2.如权利要求1所述的方法，其中，所述透明导电层为透明导电氧化物。
3.如权利要求1所述的方法，其中，沉积抗反射层的步骤包括大气压化学气相沉积。
4.如权利要求2所述的方法，其中，所述透明导电氧化物包括铟锡氧化物。
5.如权利要求1所述的方法，其中，所述光伏组件为CdTe薄膜光伏组件。
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