CN101826500A - Light emitting diode conduct support assembly, manufacturing method thereof and light emitting diode - Google Patents
Light emitting diode conduct support assembly, manufacturing method thereof and light emitting diode Download PDFInfo
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- CN101826500A CN101826500A CN 200910127412 CN200910127412A CN101826500A CN 101826500 A CN101826500 A CN 101826500A CN 200910127412 CN200910127412 CN 200910127412 CN 200910127412 A CN200910127412 A CN 200910127412A CN 101826500 A CN101826500 A CN 101826500A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention discloses a light emitting diode conduct support assembly, a manufacturing method thereof and a light emitting diode. A base of the light emitting diode is partially shielded by a shade corresponding to each base of the light emitting diode; and a layer of metal reflection thin film not in contact with a conductor support is plated on the surrounding sidewall of the base with a dry plating method so that the reflectivity of light beams irradiating the surrounding sidewall is greatly improved when grains arranged in the base shine, thereby improving the whole light emitting effect of the light emitting diode.
Description
Technical field
The present invention relates to light-emittingdiode conduct support assembly, its manufacture method and this light-emittingdiode.
Background technology
Because it is long that light-emittingdiode has high vibration strength, life-span, the advantage that simultaneously power consumption is few, the heating degree is little etc., from nineteen sixty for commercialization after, the light-emittingdiode range of application spreads all over every articles for use common in the life gradually, as the indicator light of tame electrical article, various instrument and traffic sign etc.
At present common SMT LED structure as shown in Figure 1, except that light-emittingdiode crystal grain 86 (following light-emittingdiode crystal grain abbreviates crystal grain as) and one group of wire support that is not in contact with one another each other 32, also have one and the pedestal 6 of Shu depression 62 is arranged with macromolecular material ejection formation, central authorities such as opaque plastics, and with 88 layers of the light transmissive materials that seals these depressions 62; And this wire support 32 have be positioned at depression 62 bottoms, can be for the contact site 322 that electrically connects with crystal grain 86, and be exposed to pedestal 6 outsides, can be provided with the pin 324 that surface mounting technology is assembled in circuit board or other elements and electrically connects with contact site 322.
When light-emittingdiode when luminous, the luminous energy of its generation has partly towards depression 62 other launching around sidewall 622, even and opaque pedestal 6 make smooth more smoothly around sidewall 622 surface, and with lily plastic material ejection formation, its reflectivity is still not good, cause part luminous energy to be absorbed, not only change useless heat energy into even height heating originally produces the problem that makes the matter worse for high-brightness LED by this sidewall material.
Therefore a kind of manufacture method being arranged, is before the light-emittingdiode encapsulation, utilizes the preferable metal of reflecting effect, inserts an anastomosis ring around sidewall surfaces, avoid the becket of contact wire support simultaneously from depression.Though this kind becket can significantly promote the reflectivity of light beam, but not having suitable attachment point on flow process can supply suction pipe absorption or robotic arm gripping to carry out automated job, must with manual type will be not only frivolous but also becket that volume is little embed, both consumed human cost and efficient is poor.
Be the waste of avoiding above-mentioned luminous energy, the luminous effective utilization that promotes the light-emittingdiode assembly, how to take into account environmental protection and to promote under the prerequisite of cost not significantly, the light-emittingdiode assembly being tried one's best launch light beam, and this assembly of volume production that can automation in the same direction, will be the target that the dealer endeavoured to research and develop of each relevant light-emittingdiode.
Summary of the invention
Therefore, a purpose of the present invention is to provide a kind of energy to concentrate the light-emittingdiode manufacture method of emission light beam and automated production.
Another purpose of the present invention is to provide a kind of energy to concentrate the light-emittingdiode conduct support assembly of emission light beam.
Still a further object of the present invention is providing a kind of energy to concentrate the light-emittingdiode of emission light beam.
Another object of the present invention is to provide a kind of light-emitting diodes susceptor body of improvement.
So disclosed a kind of light-emittingdiode conduct support assembly manufacture method of the present invention, comprise the following step: the wire support substrate that a) a slice is formed with at least two light-emittingdiode wire supports places one group of mould, wherein respectively this wire support comprise at least one pair of contact site of electrically connecting at least one light-emittingdiode crystal grain respectively, and for assembling and electrically connect at least two pins of these contact sites; B) respectively at the pedestal of at least two number correspondences of corresponding these wire support position moulding, wherein these pedestals have respectively one be formed with the depression that exposes these contact sites around sidewall; C) the wire support substrate that this is formed with at least two pedestals is deviate from mould; D) cover these contact sites with one group of shade, and these are exposed by rising with these desired depth places, contact sites interval around sidewall; E) form layer of metal reflective film layer at these around sidewall exposure place with dry type plating method; And f) takes this group shade away.
And the light-emittingdiode conduct support assembly of making according to said method, comprise: a slice is formed with the wire support substrate of at least two light-emittingdiode wire supports, and wherein respectively this wire support comprises at least two contact sites for the electric connection of light-emittingdiode crystal grain respectively, reaches at least two for the pins of assembling and electrically connect these contact sites; At least two corresponding respectively be molded over these wire support positions, respectively have one be formed with the depression that exposes these contact sites smoothly around the pedestal of sidewall; At least two respectively at the level and smooth metallic reflection thin layer that is shaped around sidewall exposure place of this depression respectively.
Wherein, if in above-mentioned steps, pedestal is improved slightly, then can make a kind of light-emittingdiode, comprise: one group comprises at least two contact sites for the contact of light-emittingdiode crystal grain, reaches at least two for the light-emittingdiode wire supports of assembling and electrically connect the pin of these contact sites; A pedestal, comprise one be formed with the depression that exposes these contact sites and comprise one group with the step of these desired depths in contact sites interval around sidewall; And one deck is formed in this around the level and smooth metallic reflection thin layer of sidewall step with top; At least one light-emittingdiode crystal grain that electrically connects these contact sites; And one deck seals the transparent material layer of this base ring around sidewall and this light-emittingdiode crystal grain.
From the above, the present invention will disclose and needn't rely on manpower metallic reflector to be installed and the light-emittingdiode conduct support assembly and the manufacture method thereof of automated production, effectively improve the reflectivity of depression.In order to do making this light-emittingdiode conduct support assembly for after further being processed into light-emittingdiode, can launch more integrated light beam, promote luminous service efficiency.
Description of drawings
Fig. 1 is common SMT light-emittingdiode primary structure cutaway view, and for ease of watching, its pedestal and light transmissive material will not increase paints hatching;
Fig. 2 is the flow chart of conduct support assembly manufacture method first embodiment;
Fig. 3 is formed with substrate and pedestal, but does not plate the conduct support assembly schematic diagram of metal reflective film layer as yet;
Fig. 4 is the schematic perspective view of pedestal shade;
Fig. 5 is the schematic perspective view of contact site shade;
Fig. 6 is the schematic perspective view after the pedestal shade covers pedestal;
The schematic diagram of Fig. 7 after to be the conduct support assembly that does not plate metal reflective film layer as yet that illustrates Fig. 3 by pedestal shade and contact site shade cover shows that the part that is exposed is around sidewall;
Fig. 8 is among first embodiment, finishes sputter and has near-infrafed photodiodes conduct support assembly that layer of metal reflective film layer sends out, and the schematic perspective view of single support;
Fig. 9 is that the continue light-emittingdiode of Fig. 2 embodiment is made flow chart;
Figure 10 is among Fig. 9 embodiment, finishes the light-emittingdiode cross-sectional schematic of encapsulation;
Figure 11 is the manufacturing flow chart of second embodiment;
Figure 12 is among Figure 11 embodiment, one group of wire support, the relativeness schematic top plan view that the pedestal and a heat dissipation element of step are arranged;
Figure 13 is among Figure 11 embodiment, does not put the conduct support assembly that step is arranged of crystal grain and routing as yet, and its step supports the broken section enlarged diagram of shade;
Figure 14 is among Figure 11 embodiment, the high-power light emitting diode cross-sectional schematic of finishing;
Description of reference numerals
1 ... flow chart, 111-119,111 '-116 ', 120 '-121 ' ... step, 2 ... the light-emittingdiode conduct support assembly, 22 ... degree of depth place, 26,26 " ... metallic reflection thin layer, 28 " ... heat dissipation element, 3 ... substrate, 32 ... wire support, 322,322 " ... contact site; 324 ... pin, 6,6 " ... pedestal, 62 ... depression, 622,622 " ... around sidewall; 624 " ... step, 64 ... roof, 76 ... lateral wall, 7 " ... shade, 71 ... pedestal shade, 72 ... contact site shade; 8,8 " ... light-emittingdiode, 86,86 " ... crystal grain, 88,88 " ... light transmissive material.
Embodiment
About aforementioned and other technology contents, characteristics and effect of the present invention, in the following detailed description that cooperates with reference to graphic preferred embodiment, can clearly present.For ease of explanation, the wire support substrate that below will be formed with at least two light-emittingdiode wire supports abbreviates substrate as.
Please refer to Fig. 2, this flow chart 1 discloses the manufacture method of light-emittingdiode conduct support assembly of the present invention in regular turn.At first, step 111 is that a plate base (figure does not show) is placed one group of mould.Step 112 item substrate put appropriate after, with at least two of macromolecular material ejection formations such as plastic cement respectively at the pedestal of corresponding these wire support positions, wherein each pedestal has a depression that exposes these contact sites respectively, and this depression has one around sidewall.After treating the fixing shaping of mould material, enter step 113, this substrate that is formed with at least two pedestals is deviate from mould, then can obtain promptly not plating the conduct support assembly of metallic reflector as yet as Fig. 3, by the substrate 3 that macromolecular material coats.
Then, carry out step 114 with one group of pedestal shade 71 and contact site shade 72 shown in Figure 5 as shown in Figure 4, in the lump with reference to Fig. 6, Fig. 7, be placed in pedestal 6 tops respectively covering pedestal 6 roofs 64, lateral wall 76 and pin 324, and be placed in around sidewall 622 at interval 322 1 desired depth places 22 of these contact sites to cover the contact site 322 in the depression 62.
Subsequently, the flow process of packaging LED 8 please refer to Fig. 9 and Figure 10, after step 116, can continue to insert respectively at each depression 62 place and contact site 322 corresponding crystal grain 86 in step 117, then carry out step 118, at crystal grain 86 and corresponding 322 routings of contact site, form electric connection therebetween; Aluminium film and crystal grain are hedged off from the outer world the interference of forgo air and moisture etc. in step 119 with light transmissive material 88 these depressions 62 of sealing again.Make 8 of every light-emittingdiodes not independent at last.
Certainly, as be familiar with present technique field person and can understand easily, pedestal, wire support can have different variations in response to needs with the structure and the making flow process of shade, are not confined to above-mentioned enforcement aspect.As shown in figure 11, second embodiment is in step 111 ', step 112 ' and step 113 ' all be similar to last embodiment, be with wire support imbed in the mould, the pedestal and the demouldings of respectively corresponding each wire support of at least two of moulding in die cavity, and in this example, step 111 ' in except that in mould, inserting the substrate, as shown in figure 12, imbedded still having in the die cavity simultaneously corresponding to contact site 322 ", and predetermined " in order to device light-emittingdiode crystal grain heat dissipation element 28 thereon.
Because in the foregoing description, pedestal be formed with depression put shade around sidewall the time, be easy to generate outside inclination slightly and the deviation, with the evident difference of first embodiment, each pedestal 6 " around the sidewall 622 " below that is ejection formation " is located, is formed with the step 624 of a desired depth respectively " near contact site 322.And in step 114 ' in, as Figure 13, for example be provided with mechanical arm (figure does not show) and place shade 7 that " (being represented by dotted lines) makes on the shade 7 " being to be flattened to be supported on step 624 ".Subsequently in step 115 ', 116 ', form the level and smooth metallic reflection thin layer 26 of one deck in evaporation mode for example being exposed on the step 624 " more than the end face around sidewall 622 " " after; the high-power light emitting diode lead frame assembly of " (being represented by dotted lines) can obtain a kind of step 624 that has " in the lump with reference to Figure 14; take shade 7 away.
And then in step 120 ', with crystal grain 86 " be placed in heat dissipation element 28 " top, and routing is connected crystal grain 86 " with contact site 322 " conduction, thus, high-power light emitting diode 8 " is being done the time spent; crystal grain 86 " generate heat can see through the heat conduction way of contact transmit heat to heat dissipation element 28 ", is avoiding high-power light emitting diode 8 " the too high and damage of losing efficacy of Yin Wendu.And then step 121 ', " seal these depressions with light transmissive material 88.
The above only is the embodiment of the invention, when not limiting scope of the invention process with this.That is, the simple equivalent of being done according to the present patent application claim and description of the invention content changes and modifies, and all should still belong in the scope that patent of the present invention contains.
Claims (10)
1. light-emittingdiode conduct support assembly manufacture method is characterized in that this method comprises the following step:
A) the wire support substrate that a slice is formed with at least two light-emittingdiode wire supports places one group of mould, wherein respectively this wire support comprise at least one pair of contact site of electrically connecting at least one light-emittingdiode crystal grain respectively, and for assembling and electrically connect at least two pins of these contact sites;
B) respectively at the pedestal of at least two number correspondences of corresponding these wire support position moulding, wherein these pedestals have respectively one be formed with the depression that exposes these contact sites around sidewall;
C) the wire support substrate that this is formed with at least two pedestals is deviate from mould;
D) cover these contact sites with one group of shade, and these are exposed by rising with these desired depth places, contact sites interval around sidewall;
E) form layer of metal reflective film layer at these around sidewall exposure place with dry type plating method; And
F) take this group shade away.
2. manufacture method as claimed in claim 1, it is characterized in that, before more being included in this step b), the heat dissipation element of at least two corresponding respectively these wire supports is placed the step g) of this mould, make that these heat dissipation elements are for being connected with these light-emittingdiode crystal grain heat conduction.
3. manufacture method as claimed in claim 2 is characterized in that, more is included in after the step f), respectively at least two light-emittingdiode crystal grain is arranged at the step h of these heat dissipation elements with heat conduction way of contact correspondence); And after inserting these light-emittingdiode crystal grain, the step I of sealing these depressions with light transmissive material).
4. manufacture method as claimed in claim 1 is characterized in that, more be included in after the step f), at this depression place respectively respectively to should at least one pair of contact site inserting the step j of at least one light-emittingdiode crystal grain); After inserting this at least one light-emittingdiode crystal grain, with the step k of the corresponding contact site routing electric connection of these light-emittingdiode crystal grain) with these; And subsequently, seal the step m of these depressions with light transmissive material).
5. as claim 1,2,3 or 4 described manufacture methods, it is characterized in that, wherein this group shade of this step d) and cover simultaneously this pedestal respectively to small part roof and lateral wall.
6. as claim 1,2,3 or 4 described manufacture methods, it is characterized in that, wherein made these of this step b) around sidewall more comprise one group with these contact sites step of desired depths at interval, and this step d) is this group shade to be covered these contact sites disposal be put in this step position.
7. a light-emittingdiode conduct support assembly is characterized in that, this bracket assembly comprises:
A slice is formed with the wire support substrate of at least two light-emittingdiode wire supports, and wherein respectively this wire support comprises at least two contact sites for the electric connection of light-emittingdiode crystal grain respectively, reaches at least two for the pins of assembling and electrically connect these contact sites;
At least two corresponding respectively be molded over these wire support positions, respectively have one be formed with the depression that exposes these contact sites smoothly around the pedestal of sidewall;
At least two respectively at the level and smooth metallic reflection thin layer that is shaped around sidewall exposure place of this depression respectively.
8. a kind of light-emittingdiode conduct support assembly as claimed in claim 7 is characterized in that these more comprise around sidewall
One group with these contact sites step of desired depths at interval.
9. as claim 7 or 8 described a kind of light-emittingdiode conduct support assemblies, it is characterized in that, more comprise at least two heat dissipation elements that are fixed on these pedestals respectively by corresponding moulding.
10. a light-emittingdiode is characterized in that, this diode comprises:
One group comprises at least two contact sites for the contact of light-emittingdiode crystal grain, reaches at least two for the light-emittingdiode wire supports of assembling and electrically connect the pin of these contact sites;
A pedestal comprises
One be formed with the depression that exposes these contact sites and comprise one group with the step of these desired depths in contact sites interval around sidewall; And
One deck is formed in this around the level and smooth metallic reflection thin layer of sidewall step with top;
At least one light-emittingdiode crystal grain that electrically connects these contact sites; And
One deck seals the transparent material layer of this base ring around sidewall and this light-emittingdiode crystal grain.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910127412 CN101826500A (en) | 2009-03-02 | 2009-03-02 | Light emitting diode conduct support assembly, manufacturing method thereof and light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910127412 CN101826500A (en) | 2009-03-02 | 2009-03-02 | Light emitting diode conduct support assembly, manufacturing method thereof and light emitting diode |
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| Publication Number | Publication Date |
|---|---|
| CN101826500A true CN101826500A (en) | 2010-09-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200910127412 Pending CN101826500A (en) | 2009-03-02 | 2009-03-02 | Light emitting diode conduct support assembly, manufacturing method thereof and light emitting diode |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569540A (en) * | 2010-12-25 | 2012-07-11 | 展晶科技(深圳)有限公司 | Manufacturing method for light emitting diode package structure |
-
2009
- 2009-03-02 CN CN 200910127412 patent/CN101826500A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569540A (en) * | 2010-12-25 | 2012-07-11 | 展晶科技(深圳)有限公司 | Manufacturing method for light emitting diode package structure |
| CN102569540B (en) * | 2010-12-25 | 2014-08-27 | 展晶科技(深圳)有限公司 | Manufacturing method for light emitting diode package structure |
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Application publication date: 20100908 |