CN101826268A - Semiconductor magnetic sensor characteristic demonstrator - Google Patents
Semiconductor magnetic sensor characteristic demonstrator Download PDFInfo
- Publication number
- CN101826268A CN101826268A CN 201010174853 CN201010174853A CN101826268A CN 101826268 A CN101826268 A CN 101826268A CN 201010174853 CN201010174853 CN 201010174853 CN 201010174853 A CN201010174853 A CN 201010174853A CN 101826268 A CN101826268 A CN 101826268A
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- China
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- integrated circuit
- switch
- pin
- magnetic sensitive
- direct supply
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- Switches That Are Operated By Magnetic Or Electric Fields (AREA)
- Measuring Magnetic Variables (AREA)
- Hall/Mr Elements (AREA)
- Electronic Switches (AREA)
Abstract
The invention relates to a semiconductor magnetic sensor characteristic demonstrator which belongs to the technical field of demonstrating instruments. A circuit comprises a hall element, magnet sensing diodes, magnet sensing triodes, a light emitting diode, a 5G21 integrated circuit, a resistor, a conversion switch, a power supply switch and a voltmeter, and is characterized in that one end of the output end of the hall element is connected with the conversion switch, the other end is connected with three pins of the 5G21 integrated circuit, the four magnet sensing diodes form a magnet sensing electric bridge, one end of the output end of the magnet sensing electric bridge is connected with the conversion switch, the other end is connected with the three pins of the 5G21 integrated circuit, the two magnet sensing triodes and the resistor are connected to form a differential amplifying circuit, one end of the output end of the differential amplifying circuit is connected with the conversion switch, the other end is connected with the three pins of the 5G21 integrated circuit, and the common end of the conversion switch is connected with the two pins of the 5G21 integrated circuit. Because the technical scheme is adopted, the invention has the advantages and the positive effects of good demonstration effect and low manufacturing cost.
Description
Technical field
The present invention relates to a kind of semiconductor magnetic sensor characteristic demonstrator, belong to the demonstration instrument technical field.
Background technology
At present, in the teaching of electronic circuit course, when lecturing the characteristic of Hall element, magnetodiode and magnetic sensitive transistor and the control action in circuit thereof, witheredly make an uproar tastelessly, intuitive is poor.
Summary of the invention
The purpose of this invention is to provide a kind of semiconductor magnetic sensor characteristic demonstrator, can be according to the characteristic of change demonstration Hall element, magnetodiode and the magnetic sensitive transistor in magnetic field and the control action in circuit thereof.
The object of the present invention is achieved like this: circuit is by Hall element, magnetodiode, magnetic sensitive transistor, light emitting diode, the 5G21 integrated circuit, resistance, switch, power switch and voltage table are formed, direct supply and power switch series connection, 7 pin of 5G21 integrated circuit and the positive pole of direct supply link to each other, 4 pin of 5G21 integrated circuit and the negative pole of direct supply link to each other, one end of Hall element output terminal links to each other with switch, 3 pin of the other end and 5G21 integrated circuit link to each other, four magnetodiodes are formed the magnetosensitive electric bridge, one end of magnetosensitive electric bridge output terminal links to each other with switch, 3 pin of the other end and 5G21 integrated circuit link to each other, two magnetic sensitive transistors and resistance connect into differential amplifier circuit, one end of differential amplifier circuit output terminal links to each other with switch, 3 pin of the other end and 5G21 integrated circuit link to each other, 2 pin of switch common port and 5G21 integrated circuit link to each other, end after the series connection of resistance and light emitting diode and 6 pin of 5G21 integrated circuit link to each other, the negative pole of the other end and direct supply links to each other, connect voltage table between 6 pin of 5G21 integrated circuit and the negative pole of direct supply, voltage table, light emitting diode, Hall element, four magnetodiodes, two magnetic sensitive transistors, switch and power switch are fixed on the front of Graphic Panel, other circuit component welding is fixed on the back side of Graphic Panel in the circuit board.
Because adopt technique scheme, advantage and good effect that the present invention had are: good demonstration effect, cheap.
Description of drawings
The present invention is further described below in conjunction with drawings and Examples.
Fig. 1 is circuit theory diagrams of the present invention.
Fig. 2 is the structural representation of the embodiment of the invention.
H. Hall element G among the figure
1. magnetodiode G
2. magnetodiode G
3. magnetodiode G
4. magnetodiode G
5. magnetic sensitive transistor G
6. magnetic sensitive transistor G
7. light emitting diode is integrated circuit R I.5G21
1. resistance R
2. variable resistor R
3. resistance R
4. resistance K
1. switch K
2. power switch V. voltage table E. direct supply A. Graphic Panel D. base
Embodiment
In Fig. 1, direct supply (E) and power switch (K
2) series connection, magnetic sensitive transistor (G
5) collector and the negative pole of direct supply (E) between connecting resistance (R
1), magnetic sensitive transistor (G
6) collector and the negative pole of direct supply (E) between connecting resistance (R
3), magnetic sensitive transistor (G
5) base stage and the negative pole of direct supply (E) between meet variable resistor (R
2), 7 pin of 5G21 integrated circuit (I) link to each other with the positive pole of direct supply (E), and 4 pin of 5G21 integrated circuit (I) link to each other with the negative pole of direct supply (E), an end and the switch (K of Hall element (H) output terminal
1) link to each other, the other end links to each other with 3 pin of 5G21 integrated circuit (I), four magnetodiode (G
1, G
2, G
3, G
4) composition magnetosensitive electric bridge, an end of magnetosensitive electric bridge output terminal and switch (K
1) link to each other, the other end links to each other with 3 pin of 5G21 integrated circuit (I), two magnetic sensitive transistor (G
5, G
6) connect into differential amplifier circuit, magnetic sensitive transistor (G
5) collector and switch (K
1) link to each other magnetic sensitive transistor (G
6) collector and 3 pin of 5G21 integrated circuit (I) link to each other switch (K
1) common port links to each other resistance (R with 2 pin of 5G21 integrated circuit (I)
4) and light emitting diode (G
7) a end after the series connection and 6 pin of 5G21 integrated circuit (I) link to each other, the other end links to each other with the negative pole of direct supply (E), connects voltage table (V) between the negative pole of 6 pin of 5G21 integrated circuit (I) and direct supply (E).
In Fig. 2, Graphic Panel (A) is fixed on the base (D), voltage table (V), light emitting diode (G
7), Hall element (H), magnetodiode (G
1), magnetodiode (G
2), magnetodiode (G
3), magnetodiode (G
4), magnetic sensitive transistor (G
5), magnetic sensitive transistor (G
6), switch (K
1) and power switch (K
2) being fixed on the front of Graphic Panel (A), other circuit component welding is fixed on the back side of Graphic Panel (A) in the circuit board.
Claims (1)
1. semiconductor magnetic sensor characteristic demonstrator, circuit is made up of Hall element, magnetodiode, magnetic sensitive transistor, light emitting diode, 5G21 integrated circuit, resistance, switch, power switch and voltage table, direct supply (E) and power switch (K
2) series connection, magnetic sensitive transistor (G
5) collector and the negative pole of direct supply (E) between connecting resistance (R
1), magnetic sensitive transistor (G
6) collector and the negative pole of direct supply (E) between connecting resistance (R
3), magnetic sensitive transistor (G
5) base stage and the negative pole of direct supply (E) between meet variable resistor (R
2), 7 pin of 5G21 integrated circuit (I) link to each other with the positive pole of direct supply (E), and 4 pin of 5G21 integrated circuit (I) link to each other with the negative pole of direct supply (E), it is characterized in that: an end and the switch (K of Hall element (H) output terminal
1) link to each other, the other end links to each other with 3 pin of 5G21 integrated circuit (I), four magnetodiode (G
1, G
2, G
3, G
4) composition magnetosensitive electric bridge, an end of magnetosensitive electric bridge output terminal and switch (K
1) link to each other, the other end links to each other with 3 pin of 5G21 integrated circuit (I), two magnetic sensitive transistor (G
5, G
6) connect into differential amplifier circuit, magnetic sensitive transistor (G
5) collector and switch (K
1) link to each other magnetic sensitive transistor (G
6) collector and 3 pin of 5G21 integrated circuit (I) link to each other switch (K
1) common port links to each other resistance (R with 2 pin of 5621 integrated circuit (I)
4) and light emitting diode (G
7) a end after the series connection and 6 pin of 5G21 integrated circuit (I) link to each other, the other end links to each other with the negative pole of direct supply (E), connects voltage table (V) between the negative pole of 6 pin of 5G21 integrated circuit (I) and direct supply (E), voltage table (V), light emitting diode (G
7), Hall element (H), magnetodiode (G
1), magnetodiode (G
2), magnetodiode (G
3), magnetodiode (G
4), magnetic sensitive transistor (G
5), magnetic sensitive transistor (G
6), switch (K
1) and power switch (K
2) be fixed on the front of Graphic Panel (A).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101748539A CN101826268B (en) | 2010-04-27 | 2010-04-27 | Semiconductor magnetic sensor characteristic demonstrator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101748539A CN101826268B (en) | 2010-04-27 | 2010-04-27 | Semiconductor magnetic sensor characteristic demonstrator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101826268A true CN101826268A (en) | 2010-09-08 |
| CN101826268B CN101826268B (en) | 2012-03-28 |
Family
ID=42690172
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010101748539A Expired - Fee Related CN101826268B (en) | 2010-04-27 | 2010-04-27 | Semiconductor magnetic sensor characteristic demonstrator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101826268B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106128240A (en) * | 2016-06-29 | 2016-11-16 | 郭金虎 | A kind of logic circuit demonstration device based on Hall effect |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101261777A (en) * | 2008-04-18 | 2008-09-10 | 南京化工职业技术学院 | Heat sensitive resistance, photosensitive, force sensitive, humidity sensitive resistance, magnetism sensitive resistance variability feature demonstrator |
-
2010
- 2010-04-27 CN CN2010101748539A patent/CN101826268B/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101261777A (en) * | 2008-04-18 | 2008-09-10 | 南京化工职业技术学院 | Heat sensitive resistance, photosensitive, force sensitive, humidity sensitive resistance, magnetism sensitive resistance variability feature demonstrator |
Non-Patent Citations (2)
| Title |
|---|
| 《物理实验》 19890131 王允青 用霍尔集成电路演示霍尔效应 48 , 第1期 2 * |
| 《自贡师范高等专科学校学报》 19890228 陈梦 霍尔效应的演示 72 , 第1期 2 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106128240A (en) * | 2016-06-29 | 2016-11-16 | 郭金虎 | A kind of logic circuit demonstration device based on Hall effect |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101826268B (en) | 2012-03-28 |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C53 | Correction of patent for invention or patent application | ||
| CB03 | Change of inventor or designer information |
Inventor after: Shi Wenjuan Inventor before: Zhou Jiachao |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: ZHOU JIACHAO TO: SHI WENJUAN |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120328 Termination date: 20120427 |