CN101817643B - Novel doping method of silicon nanowire - Google Patents
Novel doping method of silicon nanowire Download PDFInfo
- Publication number
- CN101817643B CN101817643B CN 201010033926 CN201010033926A CN101817643B CN 101817643 B CN101817643 B CN 101817643B CN 201010033926 CN201010033926 CN 201010033926 CN 201010033926 A CN201010033926 A CN 201010033926A CN 101817643 B CN101817643 B CN 101817643B
- Authority
- CN
- China
- Prior art keywords
- silicon
- silicon nanowire
- silicon nanowires
- doping method
- doping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a novel doping method of a silicon nanowire, which comprises the following steps: growing a silicon nanowire on a glass substrate by utilizing a metal catalysis CVD method, implanting Fe ions or other diluted magnetic elements by using an ion implantation method, and activating the magnetism of the silicon nanowire doped with the diluted magnetic impurities by carrying out annealing treatment. By utilizing the electron spin splitting characteristic of the diluted magnetic impurities under the action of an electric field, the invention can carrying out compensation adjustment on the doping content of the doped nanowire.
Description
Technical field
The present invention relates to the doping techniques in a kind of microelectronics processing, relate in particular to a kind of novel doping method of silicon nanowire.
Background technology
Because constantly dwindling of flush type silicon device characteristic dimension; Promoted the raising of microelectronics device and circuit performance and integrated level; In fact, the characteristic dimension of the microtronics field silicon device of today below 100nm, has been " nanoelectronics " truly.
The nanostructure that receives broad research at present comprises nano belt, nano wire, nano particle, quantum dot etc., and nano wire is meant that corresponding lateral dimension is limited within 100 nanometers hard-core one-dimentional structure of longitudinal size.On this yardstick, quantum effect is very remarkable, therefore also is known as " quantum wire ".According to the difference of composition material, nano wire can be divided into different types, comprises metal nanometer line (as: Ni, Pt, Au etc.), semiconductor nanowires (as: InP, Si, GaN etc.) and isolator nano wire (as: SiO2, TiO2 etc.).The long-width ratio of typical nano wire is more than 1000; Present result of study shows that this structure has many special nature, in the nano-electron field; Nano wire can also can be used to make extra small circuit as line, field emission device and the biomolecules nano-sensor etc. of quantum device.
To above silicon nanowire structure and device, also have some key issues to fail to solve, comprising the doping problem of nano wire with broad prospect of application.
In the prior art, the doping of nano wire all is in the growing nano line process, controls through the content of impurity reactant gases in the adjustment CVD system.
There is following weak point at least in above-mentioned prior art:
For the control of can not mixing of the good nano wire of growth.
Summary of the invention
The purpose of this invention is to provide the novel doping method of silicon nanowire that a kind of nano wire that can get well growing carry out the doping content regulation and control.
The objective of the invention is to realize through following technical scheme:
Novel doping method of silicon nanowire of the present invention comprises step:
A, on substrate material grow silicon nanowires;
Mix rare magnetic impurity in B, the silicon nanowires of in steps A, growing;
C, the silicon nanowires that mixes rare magnetic impurity among the step B is carried out magnetic through anneal activate.
Technical scheme by the invention described above provides can be found out, novel doping method of silicon nanowire of the present invention, owing in the silicon nanowires of growth, mix rare magnetic impurity, and the silicon nanowires that mixes rare magnetic impurity is carried out magnetic through anneal activate.Can be through the electron spinning splitting characteristic of rare magnetic impurity under electric field action, the doping content of adulterated nano wire is compensated adjustment.
Description of drawings
Fig. 1 is the magnetic hysteresis loop synoptic diagram under the 300K for the silicon nanowires of mixing Fe among the present invention in temperature.
Embodiment
Novel doping method of silicon nanowire of the present invention, the embodiment that it is preferable comprises step:
A, on substrate material grow silicon nanowires, can be through metal catalytic CVD method grow silicon nanowires on glass substrate;
Mix rare magnetic impurity in B, the silicon nanowires of in steps A, growing, rare magnetic impurity comprises Fe or other rare magnetic element;
C, the silicon nanowires that mixes rare magnetic impurity among the step B is carried out magnetic through anneal activate.
In the above-mentioned steps A, describedly on glass substrate, can comprise through metal catalytic CVD method grow silicon nanowires:
On glass substrate, at first sputter one layer thickness is the gold layer of 15-25 nanometer, and through chemical corrosion method, forming diameter is the gold nano cluster of 5-30 nanometer, under 435-460 ℃ hydrogen environment, uses silane as pasc reaction thing grow silicon nanowires then.
Among the above-mentioned step B, can adopt ion implantation method to inject the Fe ion, the injection energy is 120～220keV, and injection quantity is 3 * 1017cm
-2～5 * 1017cm
-2, like 150keV, the temperature during injection is 200-300 ℃.Injecting Fe ionic process, substrate material can tilt 6-8 °, tilts 7 ° like substrate material.
Above-mentioned anneal comprises:
Under 240～260 ℃ hydrogen atmosphere, annealed 4～6 minutes.Also can adopt other annealing process.
The doping requirement of the SiNW that accomplishes at present, general requirement to growing accomplish accurately control with can compensation adjustment, for example, when making silicon nano line transistor,, need the accurately doping content of control nano wire for obtaining to satisfy the device performance of circuit needs; Simultaneously also need compensate adjustment to the doping content of adulterated nano wire.
Doping techniques among the present invention can carry out the accurate control and the compensation adjustment of concentration to nano wire.For the nano-material that it is good that has been grown, can change the conductive characteristic of nano wire through the synthetic process method in the external world, doping process will have effectively, simply.For the control of the doping content of nano wire, be that the content through the adjustment iron ion reaches.After growth was accomplished, annealing was unusual important step, is used for activating magnetic.
Specific embodiment comprises:
Step 1, metal catalytic CVD method grow silicon nanowires:
The substrate of selecting is a glass, and at first sputter one layer thickness is the gold layer of 20 nanometers, through chemical corrosion method; Making it to form diameter is that (4.9nm ± 1.0nm), (9.7nm ± 1.5nm), 20nm (19.8 ± 2.0nm) for 10nm for 5nm; (gold nano cluster of 30nm ± 3nm) then at 435-460 ℃, uses silane as pasc reaction thing growth SiNW to 30nm; Rule of thumb, use hydrogen, can effectively reduce the surfaceness of the nano wire that is grown as ducted gas.
Mix with rare magnetic impurity; Reason based on this technological line is; The applicant has found that first rare magnetic impurity has the synthetic effect of effective doping to silicon nanowires, and the applicant is in the process of grow silicon nanowires, from the growth of the silicon nanowires (Si:FeNW) of experimentally having realized mixing Fe; Realize that through suitable anneal magnetic activates, and has shown certain micromagnetism.Rare magnetic impurity mainly is because the electron spinning division of rare magnetic impurity under electric field action causes to the doping mudulation effect of nano wire, specifically comprises:
In step 1, adopt ion implantation method to inject the Fe ion in the silicon nanowire material of preparation; Inject energy and can be 120～220keV, like 150keV; Inject quantity and can be 3 * 1017cm
-2～5 * 1017cm
-2Temperature during injection can be selected higher temperature for use, as more than or equal to 200 ℃, but can not be above 300 ℃.Injecting Fe ionic process, substrate material can tilt about 7 °, as 6～8 °, can avoid defect of pipeline to occur.
Afterwards, the silicon nanowires after the ion implantation completion of Fe is carried out anneal, under hydrogen atmosphere, annealed 4～6 minutes for 240～260 ℃.
Silicon nanowires is carried out the anneal under the above-mentioned hydrogen atmosphere, and the advantage of doing like this is:
Reduce the influence of surface imperfection or dangling bonds to device; After impurity mixes, help improving the doping scope, avoid mixing structural damage.
As shown in Figure 1, for the silicon nanowires of mixing Fe is the magnetic hysteresis loop under the 300K in temperature, can prove that this nano wire has micromagnetism.
Through experiment; The characteristic that the forward and backward silicon nano line transistor of Fe is mixed in contrast; Can find out that rare magnetic impurity has typical doping modulation phenomenon to nano wire, the device property that different impurities content is corresponding different; The corresponding different components characteristic of different rare magnetic foreign matter contents is so show higher doping sensitivity.
Method of the present invention is mixed for the good silicon nanowires of growing, and its maximum characteristics are exactly to realize its control of mixing to the good nano wire of growing.Because metal current nanocluster CVD growth method comparative maturity in the specific embodiment of the present invention, is primarily aimed at the SiNW (silicon nanowires) how effective doping metals catalysis CVD (Chemical Vapor Deposition, chemical vapor deposition) method is grown.
Adopt rare magnetic impurity F e to mix among the present invention; Reason based on this technological line is; The applicant has found that first rare magnetic impurity has the synthetic effect of effective doping to silicon nanowires, and the applicant has realized mixing the growth of the silicon nanowires (Si:FeNW) of Fe in the process of grow silicon nanowires; Through processing such as suitable anneal and magnetic activation, shown certain micromagnetism.Rare magnetic impurity mainly is because the electron spinning division of rare magnetic impurity under electric field action causes to the doping mudulation effect of nano wire.
The above; Be merely the preferable embodiment of the present invention, but protection scope of the present invention is not limited thereto, any technician who is familiar with the present technique field is in the technical scope that the present invention discloses; The variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.
Claims (6)
1. a doping method of silicon nanowire is characterized in that, comprises step:
A, on substrate material grow silicon nanowires;
Mix rare magnetic impurity in B, the good silicon nanowires of in steps A, growing;
C, the silicon nanowires that mixes rare magnetic impurity among the step B is carried out magnetic through anneal activate;
Described rare magnetic impurity comprises Fe;
Among the described step B, adopt ion implantation method to inject the Fe ion, the injection energy is 120～220keV, and injection quantity is 3 * 1017cm
-2～5 * 1017cm
-2, the temperature during injection is 200-300 ° of C;
Injecting Fe ionic process, 6-8 ° of said substrate material inclination.
2. doping method of silicon nanowire according to claim 1 is characterized in that, in the described steps A, on glass substrate, passes through metal catalytic CVD method grow silicon nanowires.
3. doping method of silicon nanowire according to claim 2 is characterized in that, describedly on glass substrate, comprises through metal catalytic CVD method grow silicon nanowires:
On glass substrate, at first sputter one layer thickness is the gold layer of 15-25 nanometer, and through chemical corrosion method, forming diameter is the gold nano cluster of 5-30 nanometer, under 435-460 ℃ hydrogen environment, uses silane as pasc reaction thing grow silicon nanowires then.
4. according to claim 1,2 or 3 described doping method of silicon nanowire, it is characterized in that said injection energy is 150keV.
5. according to claim 1,2 or 3 described doping method of silicon nanowire, it is characterized in that injecting Fe ionic process, said substrate material tilts 7 °.
6. according to claim 1,2 or 3 described doping method of silicon nanowire, it is characterized in that said anneal comprises:
Under 240～260 ℃ hydrogen atmosphere, annealed 4～6 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010033926 CN101817643B (en) | 2010-01-06 | 2010-01-06 | Novel doping method of silicon nanowire |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010033926 CN101817643B (en) | 2010-01-06 | 2010-01-06 | Novel doping method of silicon nanowire |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101817643A CN101817643A (en) | 2010-09-01 |
| CN101817643B true CN101817643B (en) | 2012-12-19 |
Family
ID=42652946
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010033926 Expired - Fee Related CN101817643B (en) | 2010-01-06 | 2010-01-06 | Novel doping method of silicon nanowire |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101817643B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101399167A (en) * | 2008-07-15 | 2009-04-01 | 北方工业大学 | Method for assembling silicon nano-wire |
| CN101404198A (en) * | 2008-05-30 | 2009-04-08 | 北方工业大学 | Dilute magnetic semiconductor material with high curie temperature and its production method |
-
2010
- 2010-01-06 CN CN 201010033926 patent/CN101817643B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101404198A (en) * | 2008-05-30 | 2009-04-08 | 北方工业大学 | Dilute magnetic semiconductor material with high curie temperature and its production method |
| CN101399167A (en) * | 2008-07-15 | 2009-04-01 | 北方工业大学 | Method for assembling silicon nano-wire |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101817643A (en) | 2010-09-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Thelander et al. | Electron transport in InAs nanowires and heterostructure nanowire devices | |
| Zhang et al. | Monolithic growth of ultrathin Ge nanowires on Si (001) | |
| Gao et al. | Site‐controlled uniform Ge/Si hut wires with electrically tunable spin–orbit coupling | |
| US8513641B2 (en) | Core-shell nanowire comprising silicon rich oxide core and silica shell | |
| KR101904626B1 (en) | Group III-V Compound Semiconductor Nanowire, Field Effect Transistor, and Switching Element | |
| CN101142658A (en) | Method of producing a light-emitting diode comprising a nanostructured PN junction and diode thus obtained | |
| CN113196499B (en) | Vertical silicon carbide power MOSFET and IGBT and manufacturing method thereof | |
| Wang et al. | Improvement of electron transport in a ZnSe nanowire by in situ strain | |
| Igarashi et al. | Spin-half Kondo effect in a single self-assembled InAs quantum dot with and without an applied magnetic field | |
| Phokharatkul et al. | High-density horizontally aligned growth of carbon nanotubes with Co nanoparticles deposited by arc-discharge plasma method | |
| Nakamine et al. | Size reduction and phosphorus doping of silicon nanocrystals prepared by a very high frequency plasma deposition system | |
| Burchhart et al. | Tuning the electrical performance of Ge nanowire MOSFETs by focused ion beam implantation | |
| JP4998801B2 (en) | Tunnel element manufacturing method | |
| Ling et al. | Electroluminescence from ferromagnetic Fe-doped ZnO nanorod arrays on p-Si | |
| CN101817643B (en) | Novel doping method of silicon nanowire | |
| Yao et al. | The luminescent inhomogeneity and the distribution of zinc vacancy-related acceptor-like defects in N-doped ZnO microrods | |
| Pfund et al. | Fabrication of semiconductor nanowires for electronic transport measurements | |
| CN101399167B (en) | Method for assembling silicon nano-wire | |
| CN107093559B (en) | Preparation of graphene electrode MoS based on Ni catalysis2Method of field effect transistor | |
| JP5978269B2 (en) | Transistor element and manufacturing method thereof | |
| Yang et al. | Phosphorus doping of Si nanosheets by spin-on dopant proximity | |
| WO2006104150A1 (en) | Semiconductor device producing method and semiconductor device | |
| Gruyters et al. | Subsurface sites of Fe in H/Si (111) studied by scanning tunneling microscopy | |
| CN108962981B (en) | Structure for reducing electric leakage in gallium nitride-based epitaxial layer and preparation method thereof | |
| Sultan | Top-down fabrication and characterization of zinc oxide nanowire field effect transistors |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121219 Termination date: 20160106 |