CN101811888A - Method for preparing composite air-sensitive membrane of carbon nano tube embedded with oxide quantum dots - Google Patents
Method for preparing composite air-sensitive membrane of carbon nano tube embedded with oxide quantum dots Download PDFInfo
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- CN101811888A CN101811888A CN 201010153532 CN201010153532A CN101811888A CN 101811888 A CN101811888 A CN 101811888A CN 201010153532 CN201010153532 CN 201010153532 CN 201010153532 A CN201010153532 A CN 201010153532A CN 101811888 A CN101811888 A CN 101811888A
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 36
- 239000002041 carbon nanotube Substances 0.000 title claims abstract description 36
- 229910021393 carbon nanotube Inorganic materials 0.000 title claims abstract description 36
- 239000002131 composite material Substances 0.000 title claims abstract description 20
- 239000012528 membrane Substances 0.000 title claims abstract description 20
- 239000002096 quantum dot Substances 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000005245 sintering Methods 0.000 claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000010703 silicon Substances 0.000 claims abstract description 16
- 238000002360 preparation method Methods 0.000 claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 12
- 239000002105 nanoparticle Substances 0.000 claims abstract description 8
- 238000000197 pyrolysis Methods 0.000 claims abstract description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 11
- 239000002002 slurry Substances 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 9
- 238000003756 stirring Methods 0.000 claims description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- 230000009514 concussion Effects 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 6
- 150000004706 metal oxides Chemical class 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 238000007639 printing Methods 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 241000555268 Dendroides Species 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 229960001866 silicon dioxide Drugs 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 4
- 238000005303 weighing Methods 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000001856 Ethyl cellulose Substances 0.000 claims description 3
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 3
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 claims description 3
- 229960000935 dehydrated alcohol Drugs 0.000 claims description 3
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000005485 electric heating Methods 0.000 claims description 3
- 229920001249 ethyl cellulose Polymers 0.000 claims description 3
- 235000019325 ethyl cellulose Nutrition 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- 229940116411 terpineol Drugs 0.000 claims description 3
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 3
- 238000004523 catalytic cracking Methods 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 239000008367 deionised water Substances 0.000 claims description 2
- 229910021641 deionized water Inorganic materials 0.000 claims description 2
- 238000000465 moulding Methods 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 abstract description 4
- 238000010521 absorption reaction Methods 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 26
- 239000010408 film Substances 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 5
- 238000000498 ball milling Methods 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- -1 carbon nano-tube compound Chemical class 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002238 carbon nanotube film Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 206010070834 Sensitisation Diseases 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000002242 deionisation method Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000001754 furnace pyrolysis Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000009288 screen filtration Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Abstract
The invention discloses a method for preparing a composite air-sensitive membrane of a carbon nano tube embedded with oxide quantum dots. The composite air-sensitive membrane is prepared by preparing a layer of an oxide nano particle membrane layer on a silicon substrate, sintering the silicon substrate in a sintering furnace at a high temperature and then growing a carbon nano tube on the oxide nano particle membrane through high-temperature pyrolysis. The composite air-sensitive membrane is the dendritic carbon nano tube embedded with the oxide quantum dots. The air-sensitive membrane with a composite structure increases passages for electron transportation and absorption, increases surface area and contributes to improvement on air sensitivity and selectivity. The preparation process of the composite air-sensitive membrane has the advantages of simple operation and low cost.
Description
Technical field
The invention belongs to gas sensor sensitive thin film preparation field, relate to a kind of preparation method who is embedded with the composite air-sensitive membrane of carbon nano tube of oxide quantum dots.
Background technology
The cardinal principle of gas sensor is that detected gas and gas sensitization film react, the attribute such as material structure, surface state that causes air-sensitive film changes, this attribute change is changed into electrical signal outputs such as resistance, electricity are led, electric capacity, the electrical signal by output can analyze information such as the component of gas and concentration.Therefore for gas detection, the effect of sensitive membrane is crucial.Sensitive membrane has often determined structure, power consumption, life-span, sensitivity, the time of response of gas sensor, the key characteristics such as scope of detection to a great extent.Metal oxide semiconductor such as stannic oxide, zinc oxide, titanium oxide, zirconium white etc. are the widest gas sensitives of present range of application, because metal oxide materials has physics, chemical stability is good, the reliability height, gas adsorption, desorption time weak point, advantages such as sensitivity height are fit to do gas sensitive very much.But metal oxide air-sensitive film transmitter, the working temperature universal demand is than higher (at least more than 200 ℃), and selectivity is relatively poor under the room temperature, and the life-span is short, and the complicated cost of manufacture of device architecture is higher.Thereby how to develop new sensitive membrane material and preparation technology thereof, the characteristics such as sensitivity, stability, selectivity and life-span that improve gas sensor become the problem that current gas sensor field presses for solution.Carbon nanotube is as a kind of novel nano material, has that specific surface area is big, electronic mobility is high, an advantage such as can work under the room temperature, is well suited for doing gas sensitive and air-sensitive conductive material.Have highly sensitive, advantages such as response is fast, work under the room temperature, anti-electromagnetic-radiation based on the gas sensor of carbon nanotube.But the air-sensitive selectivity ratios of carbon nanotube is relatively poor, is difficult to accurately distinguish the kind of gas.This patent proposes embed oxide quantum dot formation composite air-sensitive material on carbon nanotube, take into account the carbon nanotube good electron and transport performance and oxide quantum dots selectivity gaseous species, realize at room temperature high precision, selectively, the rapid detection all gases.The advantage of matrix material is 1+1＞2, and the development of novel gas sensitive is that solid basis has been established in the research of gas sensor.
Summary of the invention
The objective of the invention is to, a kind of preparation method who is embedded with the composite air-sensitive membrane of carbon nano tube of oxide quantum dots is provided, this method can provide a kind of air-sensitive film technology of preparing of practicality for gas sensor.
To achieve these goals, the technical solution used in the present invention is: the process using thick-film technique prepares one deck oxide nano particles rete on silicon substrate, high temperature sintering is as growth substrates in sintering oven, adopt FePC high-temperature catalytic cracking process carbon nano-tube composite structure in mono temperature area resistance furnace then thereon, the carbon nanotube that obtains is dendroid and has oxide quantum dots to be embedded in its pipe and tube wall, said method comprising the steps of: 1) the substrate pretreatment base material is silicon or silicon-dioxide or other metal substrate, successively use acetone respectively, dehydrated alcohol and deionized water are dried in baking oven then to each ultrasonic cleaning of substrate 20～30 minutes; 2) oxide compound printing pulp preparation takes by weighing 8～15 gram oxide compounds, particle diameter is less than 1 micron, measuring 30～50 milliliters of Terpineol 350s pours in the clean beaker, load weighted oxide compound is poured in the top beaker, with the glass stick back ultrasonic concussion 5～10 minutes in ultrasonic cleaner that stirs, add 3～4 gram ethyl cellulose then, stir and ultrasonic concussion 3～5 minutes with glass stick.Beaker is placed in the electric heating constant temperature heating container heats, keep 80～100 ℃ of temperature and constantly stir, finally make the oxide nano particles slurry; 3) substrate preparation by thick-film technique, comprises silk screen printing with the oxide nano particles slurry, gets rid of and be coated with and other coating processes moulding on silicon or silicon-dioxide or other metal substrate; 4) the sintering substrate that will prepare oxide slurry is put in the sintering oven, and 540～560 ℃ of sintering temperatures are set, and keeps constant temperature 30～40 minutes, naturally cools to room temperature then; 5) oxide substrate of carbon nano-tube after with sintering is as growth substrates, with FePC as carbon source, hydrogen adopts FePC catalystic pyrolysis carbon nano-tube sandwich (seeing patent (GL200510096426) " technology of mono temperature area resistance furnace pyrolysis for growing and purifying carbon nano-tube ") as reducing gas in mono temperature area resistance furnace.
Oxide compound is the multiple metal oxide of zinc oxide, stannic oxide, titanium oxide or zirconium white.
The technology that is embedded with the composite air-sensitive membrane of carbon nano tube of oxide quantum dots of the present invention can be carried out in multiple substrate, such as substrate materials such as silicon, silicon oxide, other metals.Oxide membranous layer wherein can be multiple metal oxides such as zinc oxide, stannic oxide, titanium oxide, zirconium white.The present invention establishes certain basis for the development and the development of gas sensor.
Description of drawings
Fig. 1 is an air-sensitive film structures of samples synoptic diagram.
1 expression substrate; 2 oxide particle retes; 3 carbon nano-tube films.
Fig. 2 is the electromicroscopic photograph of carbon nano-tube compound film.
Below in conjunction with accompanying drawing content of the present invention is described in further detail.
Embodiment
With reference to shown in Figure 1,1 is substrate, and 2 is the oxide particle rete, and 3 is carbon nano-tube film.Substrate is provided with one deck sull, and growth has the dendroid carbon nano-tube compound film that is embedded with oxide quantum dots on sull.
With reference to the SEM photo of carbon nanotube stannic oxide composite membrane shown in Figure 2, the oxidized tin particles of dendritic carbon nanotube is wrapped in, and the carbon nanotube that grows is the ring shape, and can be clear that the stannic oxide quantum dot is embedded in the tube wall and pipe of carbon nanotube.
According to technical scheme of the present invention, preparation method's the specific requirement that is embedded with the dendroid composite air-sensitive membrane of carbon nano tube of oxide quantum dots is: 1) oxide particle obtains by ball milling, oxide membranous layer is by being screen-printed on the silicon substrate, what 450～560 ℃ of sintering formed in thermostat container afterwards, the thickness of oxide particle rete is approximately 10um.
2) carbon nano tube compound material is to be grown on the oxide particle rete.
3) carbon nanotube is to grow in single warm area tube furnace by the FePC high-temperature cracking method.
Specific embodiments of the invention are composite air-sensitive membrane of carbon nano tube that are embedded with the stannic oxide quantum dot of using in the substrate of sensor component silicon structure.
1) the substrate pretreatment base material is the low-resistance silicon substrate, successively uses acetone, dehydrated alcohol and deionization to each ultrasonic cleaning of substrate half hour, 120 ℃ of bakings oven dry in 20～30 minutes in baking oven then respectively.
2) the stannic oxide pulp preparation a) the ball milling putty powder then by 300 purpose screen filtrations.Take by weighing 8～10 gram ball milling rear oxidation tin.
B) measuring 30～50 milliliters of Terpineol 350s pours in the clean beaker.Load weighted stannic oxide is poured in the top beaker, with the glass stick back ultrasonic concussion 5～10 minutes in ultrasonic cleaner that stirs.
C) take by weighing ethyl cellulose 3～4 grams then, pour in the top beaker, stir 5～10 minutes d of ultrasonic concussion in ultrasonic cleaner with glass stick) beaker is placed in the electric heating constant temperature heating container heats, and constantly stir, make oxide compound printing slurry.
3) silk screen printing is fixed to ready made silk screen on the screen process press, according to alignment patterns silicon chip is fixed, and presses silk screen.Get an amount of stannic oxide and print the place ahead that slurry is positioned over the silk screen graph window, one hand is holding up scraper plate that stannic oxide printing slurry was scraped the graphics field then, and stannic oxide printing slurry sees through silk screen and stays formation stannic oxide rete on the silicon chip.
4) the sintering silicon chip that will print the stannic oxide slurry is put on the ceramic tile of thermostat container, again ceramic tile is put into thermostat container, and 540～560 ℃ of sintering temperatures are set, and keeps constant temperature 30～40 minutes, naturally cools to room temperature then.
5) silicon chip behind the effective top stannic oxide sintering of growth carbon is as substrate, and as carbon source, hydrogen is reducing gas with FePC, and argon gas is protection gas and carrier gas, and the silicon chip behind the burning-out knot is put into single warm area tube furnace carbon nano-tube.
Use the present invention and finally grow dendritic CNT at oxidation film, and discovery there is the embedding of oxide quantum dots in the tube wall of CNT and pipe. The composite air-sensitive film of this new construction had both increased surface area, and for gas absorption and electron transport increase many passages, gas-sensitive property been significantly enhanced again. The good advantage of highly sensitive, the mature and stable property of the existing oxide material of this NEW TYPE OF COMPOSITE air-sensitive film has again carbon nano-tube material ambient operation, anti-electromagnetic interference, highly sensitive, the advantage such as reaction is fast.
Claims (2)
1. be embedded with the preparation method of the composite air-sensitive membrane of carbon nano tube of oxide quantum dots, it is characterized in that, adopt thick-film technique on silicon substrate, to prepare one deck oxide nano particles rete, high temperature sintering is as growth substrates in sintering oven, adopt FePC high-temperature catalytic cracking process carbon nano-tube composite structure in mono temperature area resistance furnace then thereon, the carbon nanotube that obtains is dendroid and has oxide quantum dots to be embedded in its pipe and tube wall, said method comprising the steps of:
1) substrate pretreatment
Base material is silicon or silicon-dioxide or other metal substrate, successively uses acetone, dehydrated alcohol and deionized water to each ultrasonic cleaning of substrate 20～30 minutes respectively, dries in baking oven then;
2) oxide compound printing pulp preparation
Take by weighing 8～15 gram oxide compounds, particle diameter is less than 1 micron, measuring 30～50 milliliters of Terpineol 350s pours in the clean beaker, load weighted oxide compound is poured in the top beaker, with the glass stick back ultrasonic concussion 5～10 minutes in ultrasonic cleaner that stirs, add 3～4 gram ethyl cellulose then, stir and ultrasonic concussion 3～5 minutes with glass stick; Beaker is placed in the electric heating constant temperature heating container heats, keep 80～100 ℃ of temperature and constantly stir, finally make the oxide nano particles slurry;
3) substrate preparation
The oxide nano particles slurry by thick-film technique, is comprised silk screen printing, gets rid of and be coated with and other coating processes moulding on silicon or silicon-dioxide or other metal substrate;
4) sintering
The substrate for preparing oxide slurry is put in the sintering oven, 540～560 ℃ of sintering temperatures are set, kept constant temperature 30～40 minutes, naturally cool to room temperature then;
5) carbon nano-tube
Oxide substrate behind the sintering as growth substrates, is adopted FePC catalystic pyrolysis carbon nano-tube sandwich in mono temperature area resistance furnace.
2. the preparation method of the composite air-sensitive membrane of carbon nano tube that is embedded with oxide quantum dots described in the claim 1 is characterized in that, oxide compound is the multiple metal oxide of zinc oxide, stannic oxide, titanium oxide or zirconium white.
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| CN2010101535320A CN101811888B (en) | 2010-04-23 | 2010-04-23 | Preparation method of carbon nanotube composite gas-sensitive film embedded with oxide quantum dots |
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| CN2010101535320A CN101811888B (en) | 2010-04-23 | 2010-04-23 | Preparation method of carbon nanotube composite gas-sensitive film embedded with oxide quantum dots |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101881667A (en) * | 2010-06-24 | 2010-11-10 | 电子科技大学 | Uncooled microbolometer and preparation method thereof |
| CN102592840A (en) * | 2012-03-19 | 2012-07-18 | 天津师范大学 | Quantum-dot sensitized oxide/carbon nanotube composite fiber solar cell photo-anode |
| CN102953059A (en) * | 2012-08-28 | 2013-03-06 | 河北工业大学 | Manufacture method of acetone gas sensitive sensor based on titanium dioxide doped by zinc oxide |
| CN103115947A (en) * | 2013-03-05 | 2013-05-22 | 济南大学 | Preparation method and application of carbon-doped mesoporous metal oxide acetone sensor |
| CN104078367A (en) * | 2013-03-29 | 2014-10-01 | 天水天光半导体有限责任公司 | Manufacturing technology of reversely-packaged Schottky diode salient points |
| CN105924871A (en) * | 2016-06-06 | 2016-09-07 | 怀远县金浩电子科技有限公司 | Preparation method of gas-sensitive slurry for semiconductor gas-sensitive element |
| CN108906013A (en) * | 2018-07-23 | 2018-11-30 | 合肥工业大学 | A kind of method that ultrasonication prepares titanium dioxide quantum dot |
| CN109060893A (en) * | 2018-07-05 | 2018-12-21 | 太原理工大学 | It is a kind of based on carbon nanotube/zinc oxide/chitosan complex film humidity sensor |
| CN110779958A (en) * | 2019-10-31 | 2020-02-11 | 山东交通学院 | Ship tail gas sensing material and preparation process thereof |
| CN116493003A (en) * | 2023-05-10 | 2023-07-28 | 长沙理工大学 | Recoverable nano carbon/titanium oxide-based water treatment photocatalytic material and preparation method thereof |
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| CN1632557A (en) * | 2004-12-22 | 2005-06-29 | 浙江大学 | Multi-wall carbon nano-tube film gas sensor |
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| CN101881667A (en) * | 2010-06-24 | 2010-11-10 | 电子科技大学 | Uncooled microbolometer and preparation method thereof |
| CN102592840A (en) * | 2012-03-19 | 2012-07-18 | 天津师范大学 | Quantum-dot sensitized oxide/carbon nanotube composite fiber solar cell photo-anode |
| CN102592840B (en) * | 2012-03-19 | 2013-11-20 | 天津师范大学 | Quantum-dot sensitized oxide/carbon nanotube composite fiber solar cell photo-anode |
| CN102953059B (en) * | 2012-08-28 | 2015-03-11 | 河北工业大学 | Manufacture method of acetone gas sensitive sensor based on titanium dioxide doped by zinc oxide |
| CN102953059A (en) * | 2012-08-28 | 2013-03-06 | 河北工业大学 | Manufacture method of acetone gas sensitive sensor based on titanium dioxide doped by zinc oxide |
| CN103115947A (en) * | 2013-03-05 | 2013-05-22 | 济南大学 | Preparation method and application of carbon-doped mesoporous metal oxide acetone sensor |
| CN103115947B (en) * | 2013-03-05 | 2014-04-23 | 济南大学 | Preparation method and application of carbon-doped mesoporous metal oxide acetone sensor |
| CN104078367A (en) * | 2013-03-29 | 2014-10-01 | 天水天光半导体有限责任公司 | Manufacturing technology of reversely-packaged Schottky diode salient points |
| CN104078367B (en) * | 2013-03-29 | 2017-10-13 | 天水天光半导体有限责任公司 | A kind of manufacture craft of flip chip package Schottky diode salient point |
| CN105924871A (en) * | 2016-06-06 | 2016-09-07 | 怀远县金浩电子科技有限公司 | Preparation method of gas-sensitive slurry for semiconductor gas-sensitive element |
| CN109060893A (en) * | 2018-07-05 | 2018-12-21 | 太原理工大学 | It is a kind of based on carbon nanotube/zinc oxide/chitosan complex film humidity sensor |
| CN109060893B (en) * | 2018-07-05 | 2020-11-13 | 太原理工大学 | Humidity sensor based on carbon nanotube/zinc oxide/chitosan composite membrane |
| CN108906013A (en) * | 2018-07-23 | 2018-11-30 | 合肥工业大学 | A kind of method that ultrasonication prepares titanium dioxide quantum dot |
| CN110779958A (en) * | 2019-10-31 | 2020-02-11 | 山东交通学院 | Ship tail gas sensing material and preparation process thereof |
| CN116493003A (en) * | 2023-05-10 | 2023-07-28 | 长沙理工大学 | Recoverable nano carbon/titanium oxide-based water treatment photocatalytic material and preparation method thereof |
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| CN101811888B (en) | 2012-05-23 |
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