CN101811659B - Non-rectangular quantum structure based on digital alloy and implementation method thereof - Google Patents
Non-rectangular quantum structure based on digital alloy and implementation method thereof Download PDFInfo
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Abstract
The invention relates to a non-rectangular quantum structure based on a digital alloy and an implementation method. The non-rectangular quantum structure is characterized in that the non-rectangular quantum structure is implemented by selecting a hetero-epitaxial material system and combinatorial design and adopting a method of the digital alloy; and the digital alloy is formed by two binary or multi-component alloy materials. The implementation method can effectively control the components of the material to precisely vary according to the design requirement on the quantum scale, thereby overcoming the single problem that the rectangular quantum structures with components mutated are only suitable to be grown by the conventional growth method, bringing in higher degree of freedom for design and implementation of the quantum structure and functions and bringing benefits to strain and interface control of the quantum structure. The invention is not only suitable for the special semiconductor lasers needing to adopt non-rectangular quantum wells but also suitable for other novel electronic or photoelectronic devices and has good universality.
Description
Affiliated field
The present invention relates to a kind of non-rectangular quantum structure based on digital alloy and its implementation, belong to Semiconductor Optoeletronic Materials and devices field.
Background technology
In semiconductor photoelectronic device (as semiconductor laser etc.) and other electronic devices (as the resonant-tunneling device etc.), introduced the developing history of the existing many decades of quantum structure, these devices have obtained extensive use in different field, and people are deeply understood and develop various quantum theories play an important role.At present, use compound semiconductor materials formation quantum structure and mainly adopt various thin-film epitaxy methods, as molecular beam epitaxy (MBE), gas phase epitaxy of metal organic compound (MOCVD) etc. constitute quantum structure but mainly also be based on dissimilar materials.For example: be substrate with GaAs, it is potential barrier that people have been developed with AlGaAs, and GaAs is the typical AlGaAs/GaAs system quantum structure of SQW; For another example: be substrate with InP, it is potential barrier that people have been developed with InAlAs, InGaAs is the typical InAlAs/InGaAs system quantum structure of SQW, and these quantum structures all have been widely used in various laser instruments, photodetector and other photoelectrons and the electronic device.What people generally adopted at present in these are used is the rectangle quantum structure of component sudden change, this structure can satisfy people's needs in a lot of occasions, and have design and the better simply advantage of growing, obtained good development, particularly for lattice matched materials system.Along with going deep into of research, this rectangle quantum structure also brings some restrictions to people, and for example: except material component, variable element is exactly the width of potential well and potential barrier to the rectangle quantum structure, often can not satisfy the designing requirement of some specific functions; For another example: for the material system that adopts lattice mismatch, the rectangle quantum structure of component sudden change tends to cause bigger strain accumulation, and the scope that this has limited material design and growth on the one hand also is unfavorable for the growth of high-quality material on the other hand.
At the problem that exists in rectangle quantum structure and the technology realization thereof, can inventor's imagination provide a kind of pervasive scheme, adopt existing method to realize controlled non-rectangular quantum structure, being suitable for adopting specific epitaxy technique (as molecular beam epitaxy) to realize, thereby be guided out design of the present invention.
Summary of the invention
The object of the present invention is to provide a kind of non-rectangular quantum structure based on digital alloy and its implementation: the present invention makes it have the characteristics of superthin layer epitaxial growth technology realizations such as suitable molecular beam epitaxy by selection and the Combination Design of hetero-epitaxy material system, adopt the quantum structure of the method realization non-rectangle of digital alloy, and the strain total amount in the quantum structure is designed control and improved interfacial characteristics, utilize the growth technique of the loose and easy control of growth conditions to realize non-rectangular quantum structure on this basis; Or rather, the invention provides a kind of epitaxial growth method that needs are introduced non-rectangular quantum structure that is suitable for, can effectively avoid conventional growth technique can only growth components the difficulty of rectangle quantum structure of sudden change, and be conducive to the strain total amount in the quantum structure is controlled and improved interfacial characteristics, these structures are particularly suitable for adopting specific epitaxy technique (as molecular beam epitaxy) to grow.
At first, select digital alloy dissimilar materials system
The growth digital alloy need have special consideration in the selection of dissimilar materials system and combination, except need satisfy the design flow minor structure to material can the basic demand with aspects such as character, energy gap and band rank parameters, the more important thing is that combination of materials and components selection thereof must be fit to the basic demand of growth technique, can grow easily and control easily, this is the prerequisite that technology realizes.
Be example to adopt the InP substrate: with the In of InP substrate lattice coupling
0.53Ga
0.47The lattice paprmeter of As ternary system material is about 5.87, the about 0.75eV of room temperature energy gap; In
0.52Al
0.48The lattice paprmeter of As ternary system material also is 5.87, the about 1.47eV of room temperature energy gap.Because the total component of these two kinds of materials is In and As, the difference component is Ga and two kinds of III families of Al element, therefore adopt these two kinds of ternary-alloy materials can form InAlGaAs quaternary digital alloy more conveniently, its energy gap can change between 0.75～1.47eV and still satisfy the lattice matching condition, and in very large range is direct band gap.For another example: the about 0.36eV of InAs binary system material room temperature energy gap, be the direct band gap small gap material, lattice paprmeter is about 6.06, and very big positive mismatch is arranged between InP, directly constitutes SQW with it and has certain difficulty; As adopt In
0.53Ga
0.47These two kinds of dissimilar materials of As and InAs constitute digital alloy, because the total component of these two kinds of materials is In and As, the difference element only is the element Ga of III family, therefore also be to realize easily on the technology, can form the digital alloy InGaAs material of equivalent In component＞0.53, under suitable strained condition, constitute non-rectangle (as triangle by it, zigzag or parabola shaped) SQW can have less overall strain amount than the InGaAs material that adopts one-component, or under the identical situation of overall strain amount, having the less equivalent potential well degree of depth, this makes it extend very favourable to the long wave direction to the wavelength of expanding laser instrument.Like this, the parameter that the InAlAs/InGaAs-InGaAs/InAs digital alloy system of employing InAlAs/InGaAs digital alloy potential barrier and InGaAs/InAs digital alloy potential well just can be reduced quantum structure within a large range, increased the change of shape free degree of alloy compositions variation and potential well and potential barrier, bring the bigger free degree for material and designs, and the ternary system In that its basic material only mates for lattice
0.53Ga
0.47As, In
0.52Al
0.48The InAs material of As and binary system, this just demarcates to the component in the material growth and improves controllability and bring great convenience with the growth quality that improves quantum structure.In view of there being bigger compressive strain in the above material system SQW, we can also introduce suitable tensile strain in potential barrier, for example adopt AlAs/InGaAs-InGaAs/InAs system etc., with further raising architecture quality.
The thinking that this Applied Digital alloy constitutes quantum structure obviously also can be generalized to the other materials system, as to adopting the GaAs substrate, just can design the GaP/GaInP-GaInP/InP, AlP/GaInP-GaInP/InP system etc. of AlInP/GaInP-GaInP/InP, AlGaAs/GaAs-GaAs/InAs, AlAs/GaAs-GaAs/InAs system or the strain compensation of growth compressive strain, to satisfy the requirement of different wavelength range and dissimilar function elements.
Described non-rectangular quantum well structure is that the material growth basis of adopting digital alloy to constitute SQW is: when the alloy material superthin layer of growth different component, thickness as each superthin layer only is several to tens atomic layers, then the virgin alloy material of these two kinds of different components will form digital alloy owing to so-called SQW melange effect, the equivalent component of digital alloy is equivalent to the weighted average of virgin alloy material component, and weight is the growth thickness of each virgin alloy material.Obviously, the effect that SQW mixes is relevant with the thickness of superthin layer on the one hand, and on the other hand with relating to parameters such as growth temperature and post-processing temperatures, the more high mixed effect of the more thin temperature of thickness can be more good.When adopting digital alloy to constitute SQW, fixed thickness as virgin alloy material superthin layer is constant, namely fix the weight of two kinds of materials, then still can form the rectangle SQW of equivalent component sudden change, if and in growth course, change the weight of two kinds of materials according to certain rule, then can form the SQW of non-rectangle, as triangle, zigzag, parabola shaped etc.
Identical with SQW, also can introduce digital alloy structure in the quantum potential barrier structure, its basic starting point is also identical with SQW, because the thickness of barrier layer is generally thicker than potential well layer in the quantum structure, barrier layer variation in design is also less, general design barrier layer thickness be fixed value and consider that mainly its component is barrier height, when the growth barrier layer, generally adopt the fixedly single alloy material of component so as far as possible, as adopt and also answer fixed weight the digital alloy, the digital alloy that the equivalent component of namely growing is fixing forms the rectangle quantum potential barrier.Certainly, there is the quantum structure of specific (special) requirements also can introduce the non-rectangular quantum potential barrier for the design growth, to reach specific function.
The present invention relates to a kind of non-rectangular quantum structure based on digital alloy, it is characterized in that:
1. adopt two kinds of polynary (containing binary) alloy materials that are fit to the growth of superthin layer epitaxy method and convenient control again to constitute digital alloy;
2. use this digital alloy forms non-rectangle at the quantum yardstick quantum structure (as SQW or quantum potential barrier), thereby overcome the unicity problem that adopts conventional growing method only to be fit to the rectangle quantum structure of growth components sudden change, for designs is introduced the bigger free degree;
3. use the strain in the controlled quentity controlled variable minor structure effectively of this structure, particularly reduce the overall strain amount, and improve interfacial characteristics;
4. described structure is particularly suitable for adopting specific epitaxy technique (as molecular beam epitaxy) to grow easily, and has excellent controllability.
The technology of the non-rectangular quantum structure based on digital alloy of the present invention realizes:
Actuality from technology, controllability and operability are set out, adopt molecular beam epitaxial process or other growth techniques to realize that aforementioned non-rectangular quantum structure should be based on existing lattice matched materials growth parameter(s), determine suitable material system according to actual requirement and previous materials system selection principle to quantum structure, then according to component and the shape need of non-rectangular quantum trap and quantum potential barrier, design corresponding material growth sequential, for making the SQW melange effect reach effect preferably, tackling the gross thickness (or thickness of title one-period) of one group of two kinds of alloy material superthin layer is controlled, periodic thickness is less can to reach mixed effect preferably, but when growth, can make the switching in source too frequent, time is too very brief, this stability and reliability to growth technique is unfavorable, also may influence equipment non-failure operation time; Too greatly then mixed effect is poor for periodic thickness, also might actually form numerous heterogeneous interfaces, influences function and the effect of quantum structure, therefore need take all factors into consideration.General periodic thickness is chosen in ten below the atomic layer.
In sum, the present invention includes employing energy gap two kinds of polynary (containing binary) alloy materials different and that be fit to adopt the growth of superthin layer epitaxy method to make things convenient for control again constitutes the method for digital alloys and uses the non-rectangular quantum structure that this method constitutes, using this method can accurately change by designing requirement at quantum yardstick control material component effectively, thereby overcome the unicity problem that adopts conventional growing method only to be fit to the rectangle quantum structure of growth components sudden change, be the design of quantum structure and function and realize introducing the bigger free degree, and bringing benefit aspect the strain of quantum structure and the Interface Control.Non-rectangular quantum structure based on digital alloy of the present invention both had been suitable for the special semiconductor lasers that needs adopt the non-rectangular quantum trap, also was suitable for other novel electrons or opto-electronic device, had good versatility.
Description of drawings
Fig. 1 is a kind of non-rectangular quantum structure schematic diagram of expanding semiconductor laser for wavelength provided by the invention.
The specific embodiment
Below by drawings and Examples, further specify substantive distinguishing features of the present invention and obvious improvement, but limit the present invention absolutely not, also be that the present invention absolutely not only is confined to embodiment.
Embodiment: a kind of wavelength of InAlAs/InGaAs digital alloy potential barrier and InGaAs/InAs digital alloy triangle potential well that adopts is expanded the quantum structure epitaxial material
Implementation step:
1. need realize that the quantum leap wavelength do not introduce antimonide material greater than 2 microns quantum structure at the InP substrate, the design wavelength of this quantum structure is about 2.3 μ m (for convenience of explanation all as example, the actual 2.3 μ m that are not limited only to, need expand to other wavelength can the rest may be inferred), therefore select the ternary system In of binary system InAs and lattice coupling
0.53Ga
0.47As is the potential well alloy material;
2. need the energy gap of barrier layer greater than the In of lattice coupling
0.53Ga
0.47As material, the therefore In that selects lattice to mate
0.53Ga
0.47As and In
0.52Al
0.48As is the potential barrier alloy material;
3. according to being with calculating, In
0.53Ga
0.47As and In
0.52Al
0.48As mixes the requirement that the digital alloy that forms namely can satisfy the potential barrier alloy material by 1: 1 mass ratio, therefore namely in the potential barrier digital alloy In
0.53Ga
0.47As and In
0.52Al
0.48The thickness of As is than locating 1: 1, and the digital alloy component of Xing Chenging is In like this
0.525Al
0.24Ga
0.235As, lattice parameter still mate with the InP substrate.The Thickness Design of barrier layer is 13.5nm, and mean allocation to 9 digital alloy is in the cycle, and each cycle 1.5nm (about four atomic layers), each superthin layer thickness are 0.75nm (about two atomic layers);
4. calculate and the requirement of strain overall control according to being with, potential well layer employing triangular structure, namely the energy gap of potential well layer from the centre to the both sides linear change, to reach the effect of avoiding stress accumulation preferably.The triangle SQW adopts InAs and In
0.53Ga
0.47The As digital alloy constitutes, and the wide 9nm that is designed to of SQW, mean allocation to 12 digital alloy be in the cycle, each cycle 0.75nm (about two atomic layers), each digital alloy InAs and In in the cycle like this
0.53Ga
0.47The thickness of As was pressed 1: 6, and 2: 5,3: 4,4: 3,5: 2,6: 1,7: 0,6: 1,5: 2,4: 3,3: 4,2: 5; 1: 6 proportional linearity changes, and forms equivalent leg-of-mutton SQW;
5. conventional molecular beam epitaxial method is adopted in epitaxial growth, determines the In of lattice coupling before the grown quantum structure earlier
0.53Ga
0.47As and In
0.52Al
0.48The growth parameter(s) of As adopts same As and In growth source and fixes its beam intensity, and makes these two kinds of ternary-alloy materials have identical or close growth rate in the growth, the actual demarcation in the growth records In
0.53Ga
0.47As and In
0.52Al
0.48The growth rate of As all is about 1 μ m/h, and the growth rate of InAs is about 0.5 μ m/h, carries out the growth of non-rectangular quantum structure on this basis;
6. Epi-Ready InP substrate being carried out the suitable cushion of desorption processing Mr.'s back ankylose, can begin to carry out the growth of non-rectangular quantum structure then.According to growth rate, growth In
0.525Al
0.24Ga
0.235The shutter of In is opened all the time during the As potential barrier, and the shutter of Al and Ga alternately opens and closes by 2.7 seconds interval and grows into design thickness, continues to finish the growth of opposite side potential barrier behind the growth non-rectangular quantum trap with same parameter;
7. the shutter of In is opened all the time when growing the non-rectangular quantum trap, and the shutter of Ga is pressed 0.8s, 2.4s, 1.6s, 2s, 2.4s, 1.6s, 3.2s, 1.2s, 4s, 0.8s, 4.8s, 0.4s, 5.6s, 0.4s, 4.8s, 0.8s, 4s, 1.2s, 3.2s, 1.6s, 2.4s, 2s, 1.6s, 2.4s, (black matrix is opened the time for the Ga shutter) closed and opened to the sequential of 0.8s, until complete non-rectangular quantum well structure of growth.Notice that the SECO precision of electron gun stove shutter in the molecular beam epitaxy is generally at 0.1s, therefore the minimum control interval also be 0.1s during the shutter timing Design, when accurately designing by SQW shape and growth rate the shutter release time have one approximate, and the actual shutter release time also has a systematic error, particularly to switch time, this error was comparatively obvious more in short-term, the shape of accurately controlling SQW as need can have corresponding a correction to sequential;
8. SQW and quantum potential barrier can repeat by application requirements during actual grown quantum structure; this ad hoc structure is considered that the number of the restriction SQW of strain total amount can be controlled in 2～3; the suitable protective cap layer in the regrowth of having grown behind the non-rectangular quantum structure; this structure namely can be used for structure and optic test, also can be applied directly in the semiconductor laser structure that wavelength expands to go.
Claims (4)
1. realize the method based on the non-rectangular quantum structure of digital alloy, it is characterized in that the quantum structure epitaxial material of method expand to(for) the wavelength that adopts InAlAs/InGaAs digital alloy potential barrier and InGaAs/InAs digital alloy triangle potential well is:
(1) realize that at the InP substrate quantum leap wavelength do not introduce antimonide material greater than 2 microns quantum structure, the wavelength of the quantum structure of design is 2.3 μ m, selects the ternary system In of binary system InAs and lattice coupling
0.53Ga
0.47As is the potential well alloy material;
(2) In that selects lattice to mate
0.53Ga
0.47As and In
0.52Al
0.48As is the potential barrier alloy material; So that the energy gap of barrier layer is greater than the In of lattice coupling
0.53Ga
0.47The As material;
(3) according to being with calculating, In
0.53Ga
0.47As and In
0.52Al
0.48As mixes the digital alloy that forms by 1: 1 mass ratio, in the potential barrier digital alloy In
0.53Ga
0.47As and In
0.52Al
0.48The thickness of As is than locating 1: 1, and the digital alloy component that makes formation is In
0.525Al
0.24Ga
0.235As, lattice parameter still mate with the InP substrate; The Thickness Design of barrier layer is 13.5nm, and mean allocation to 9 digital alloy is in the cycle, each cycle 1.5nm, and each superthin layer thickness is 0.75nm;
(4) according to the requirement that can be with calculating and strain overall control, potential well layer adopts triangular structure, and described triangle SQW is by InAs and In
0.53Ga
0.47The As digital alloy constitutes, and SQW is wide to be 9nm, and mean allocation to 12 digital alloy is in the cycle, each cycle 0.75nm, and each digital alloy is InAs and In in the cycle
0.53Ga
0.47The thickness of As was pressed 1: 6, and 2: 5,3: 4,4: 3,5: 2,6: 1,7: 0,6: 1,5: 2,4: 3,3: 4,2: 5; 1: 6 proportional linearity changes, and forms equivalent leg-of-mutton SQW;
(5) conventional molecular beam epitaxial method is adopted in epitaxial growth, determines the In of lattice coupling before the grown quantum structure earlier
0.53Ga
0.47As and In
0.52Al
0.48The growth parameter(s) of As adopts same As and In growth source and fixes its beam intensity, and makes these two kinds of ternary-alloy materials have identical or close growth rate in the growth, carry out the growth of non-rectangular quantum structure;
(6) Epi-Ready InP substrate being carried out the suitable cushion of desorption processing Mr.'s back ankylose, can begin the growth of non-rectangular quantum structure then; According to growth rate, growth In
0.525Al
0.24Ga
0.235The shutter of In is opened all the time during the As potential barrier, and the shutter of Al and Ga alternately opens and closes by 2.7 seconds interval and grows into design thickness, continues to finish the growth of opposite side potential barrier behind the growth non-rectangular quantum trap with same parameter;
The shutter of In is opened all the time when (7) growing the non-rectangular quantum trap, and the shutter of Ga is closed and opened by certain time sequence, until complete non-rectangular quantum well structure of growth; The minimum control interval also is 0.1s during the shutter timing Design;
(8) SQW and quantum potential barrier repeat the suitable protective cap layer of regrowth behind the non-rectangular quantum structure of having grown by application requirements during the grown quantum structure.
2. the non-rectangular quantum structure of realizing by the described method of claim 1 based on digital alloy is characterized in that with InP being that the digital alloy of substrate is InAlAs/InGaAs-InGaAs/InAs; The digital alloy that with GaAs is substrate is GaP/GaInP-GaInP/InP, the AlP/GaInP-GaInP/InP system of AlInP/GaInP-GaInP/InP, AlGaAs/GaAs-GaAs/InAs, AlAs/GaAs-GaAs/InAs system or strain compensation.
3. by the described non-rectangular quantum structure based on digital alloy of claim 2, it is characterized in that the SQW of described digital alloy formation non-rectangle is triangle.
4. by the described structure of claim 2, it is characterized in that barrier layer thickness is bigger than potential well layer thickness in the quantum structure of non-rectangle.
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| US11424376B2 (en) * | 2019-04-09 | 2022-08-23 | Peng DU | Superlattice absorber for detector |
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| InP基In_0.53Ga_0.47As 光电探测器的量子效率优化;田招兵;《红外与毫米波学报》;20080430;第27卷(第2期);81-85 * |
| 田招兵.InP基In_0.53Ga_0.47As 光电探测器的量子效率优化.《红外与毫米波学报》.2008,第27卷(第2期),81-85. |
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