CN101807590B - Multispectral photosensitive component - Google Patents
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
- H01L27/14647—Multicolour imagers having a stacked pixel-element structure, e.g. npn, npnpn or MQW elements
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
- H01L27/14652—Multispectral infrared imagers, having a stacked pixel-element structure, e.g. npn, npnpn or MQW structures
Abstract
The invention relates to a multispectral photosensitive component which comprises multilayer composite photosensitive pixels which adopt a single-face or double-face machining mode, realize up-down placement in a silicic P or N basic layer in two, three or four and respectively induct spectra which are orthogonal or complementary in visible light or visible and infrared light spectra. Basic photosensitive pixels on different levels in the composite photosensitive pixels can be designed to induct different colors or spectra, therefore, a multispectral photosensitive chip is obtained by repeatedly arranging a macro unit comprising more than one composite photosensitive pixel. The multispectral photosensitive component comprises a new design of the multilayer photosensitive pixels and examples thereof used for single-face double-layer, double-face double-layer, double-face three-layer, double-face four-layer, single-face mixed double-layer and double-face mixed double-layer or multilayer multispectral photosensitive components. The multispectral photosensitive component has more favorable colored photosensitive property and colored photosensitive and infrared photosensitive integration and simple machining process.
Description
Technical field
The present invention relates to a kind of multi-optical spectrum light-sensitive device, specifically, relate to a kind of physics realization and making of multi-optical spectrum light-sensitive device.More accurately, the present invention relates to realize to respond to simultaneously with CCD or cmos semiconductor the sensor devices that is used for full-colour image of a plurality of spectrum (such as visible light and infrared ray).Here, panchromaticly refer to whole interested spectrum.For common (visible light) sensor devices, panchromatic finger is contained the whole visible spectrum of red, green, blue and white.For the sensor devices of infrared and colored unification, panchromatic visible spectrum and the infrared spectrum of referring to.The present invention is infrared applicable to comprising, the multi-optical spectrum light-sensitive device of black and white and coloured image.
Background technology
The present invention be the inventor a little earlier 1 " multi-optical spectrum light-sensitive device and preparation method thereof " (PCT/CN2007/071262) and " multi-optical spectrum light-sensitive device and preparation method thereof " (Chinese application number: continuity 200810217270.2) aims to provide more concrete and preferred Semiconductor Physics and realizes.
Sensor devices before, or be absorbed in color visible, or be absorbed in infrared light seldom has the two is combined.Although other invention or application are also arranged, for example adopt the semiconductor technology (" Silicon infrared focalplane arrays " of indium antimony, M.Kimata, in Handbook of Infrared Detection Technologies, editedby M.Henini and M.Razeghi, pp.352-392, Elsevier Science Ltd., 2002), realize simultaneously the induction of visible and infrared light, but they do not obtain colour.And the existing method that obtains simultaneously colored and infrared sensitization is with a color sensitive device and an infrared sensor devices, the physics superposition together (as " and Backside-hybridPhotodetector for trans-chip detection of NIR light]; by T.Tokuda et al., in IEEEWorkshop on Charge-coupled Devices ﹠amp; Advanced Image Sensors, Elmau, Germany, May2003, and " A CMOS image sensor with eye-safe detection function using backsidecarrier injection ", T.Tokuda et al., J.Inst Image Information ﹠amp; Television Eng., 60 (3): 366-372, March 2006).
Existing sensor devices why, failing has three with the main cause that color sensitive device and infrared sensor devices integrate.First reason is that existing color sensitive device all needs to use color filter film (red/green/orchid, or green grass or young crops/Huang/magenta/green) and obtains colour.And these filter coatings also have a very strong light-filtering characteristic to infrared.In addition, bright in luster in order to allow, also add infrared filter at camera lens specially, may send out the mist phenomenon to what chromatic image brought to weaken infrared light.Although three layers of sensitization technology of the X3 of Foveon company realize the selection of color with the degree of depth, saved filter coating, but three layers of sensitization fabrication techniques be very difficult and industrialization situation and bad, if add below again an infrared layer, so, situation only can be more complicated, thereby be difficult to possess practical value.Second reason is that the silicon that semiconductor is commonly used can only absorb the infrared ray of the following wavelength of 1100 nanometers usually.Therefore, much be used for the device of infrared sensitization, employing be other semi-conducting material, such as germanium, SiGe mixed crystal, HgCdTe, the materials such as InSb.These materials are not suitable for visible light.The 3rd is the manufacturing technology that lacks practicable bilayer or multilayer sensor devices.
Therefore, how to realize better color sensitive, and color sensitive device and infrared sensor devices carried out integrated that these problems await further research and improve.
Summary of the invention
Based on top described, the invention provides a kind of multi-optical spectrum light-sensitive device, not only can realize better color sensitive, the implementation that color sensitive device and infrared sensor devices is integrated also is provided.
The technical scheme that the present invention solve the technical problem is:
A kind of multi-optical spectrum light-sensitive device, comprise a basic unit, be provided with a plurality of compound photosensitive pixels macrocells according to the predetermined pattern repeated arrangement in described basic unit, described compound photosensitive pixels macrocell comprises at least one compound photosensitive pixels, and described compound photosensitive pixels is comprised of at least two basic photosensitive pixels, and described basic photosensitive pixels is along every layer of layered arrangement of direction of illumination, and in one side two-layer mode at the most, be distributed in the end face of basic unit, or the bottom surface, or end face and bottom surface.
In a kind of embodiment of described multi-optical spectrum light-sensitive device, basic photosensitive pixels in the described compound photosensitive pixels comprises 2, two-layer layout is divided in end face or bottom surface in basic unit, form the compound photosensitive pixels of single-surface double-layer, or be arranged in end face and the bottom surface of basic unit, form the compound photosensitive pixels of two-sided double-deck.
Described multi-optical spectrum light-sensitive device, the compound photosensitive pixels in the described basic unit can be the compound photosensitive pixels of single-surface double-layer, thereby makes described multi-optical spectrum light-sensitive device consist of the single-surface double-layer sensor devices.
The compound photosensitive pixels of described single-surface double-layer can be by mixing (P doping) by be first P in the basic unit of a N silicon, and then on the layer that P mixes, and does the N-P-N composite junction that N mixes rear formation and form.
The compound photosensitive pixels of described single-surface double-layer also can be by mixing (N doping) by be first N in the basic unit of a P silicon, and then on the layer that N mixes, and does the P-N-P composite junction that P mixes rear formation and form.
Described multi-optical spectrum light-sensitive device, the compound photosensitive pixels in the described basic unit can be the compound photosensitive pixels of two-sided double-deck, thereby makes described multi-optical spectrum light-sensitive device consist of the two-sided double-deck sensor devices.
The compound photosensitive pixels of described two-sided double-deck can be by mixing the P-N-P composite junction that (Pdoping) obtain and form by all being P in the end face of the basic unit of a N silicon and bottom surface.
The compound photosensitive pixels of described two-sided double-deck also can be by mixing the N-P-N composite junction that (N doping) obtain and form by all being N in the end face of the basic unit of a P silicon and bottom surface.
In a kind of execution mode of described multi-optical spectrum light-sensitive device, basic photosensitive pixels in the described compound photosensitive pixels comprises 3 or 4, wherein two-layer layout is divided in two end face or bottom surfaces in basic unit, remaining basic photosensitive pixels is divided one deck or two-layer layout at bottom surface or the end face of basic unit, forms the compound photosensitive pixels of double-sided multi-layer.
Described multi-optical spectrum light-sensitive device, the compound photosensitive pixels in the described basic unit can be the compound photosensitive pixels of double-sided multi-layer, thereby makes described multi-optical spectrum light-sensitive device consist of the double-sided multi-layer sensor devices.
The compound photosensitive pixels of described double-sided multi-layer can be by mixing by all being P in the end face of the N of silicon basic unit and bottom surface, and mix that layer is that N mixes and the P-N-P that obtains at P again, N-P-N-P, and P-N-P-N, the composite junction of N-P-N-P-N forms.
The compound photosensitive pixels of described double-sided multi-layer can be by mixing by all being N in the end face of the P of silicon basic unit and bottom surface, and mix layer at N again and be P and mix the N-P-N that obtains, N-P-N-P, and P-N-P-N, or the composite junction of P-N-P-N-P forms.
Described multi-optical spectrum light-sensitive device, a spectral coverage of the pairwise orthogonal of each self-induction visible light of the basic photosensitive pixels in the described compound photosensitive pixels or visible light and infrared light, the spectral information that the compound photosensitive pixels of all of described compound photosensitive pixels macrocell is responded to combine and comprise RGB or the necessary spectral information of the colored reconstruction of CMYK.
Described multi-optical spectrum light-sensitive device, the spectrum of responding to from the nearest basic photosensitive pixels of light source in the described compound photosensitive pixels comprises the sky look, blueness, green, cyan, white, and white adds infrared colour.
Described multi-optical spectrum light-sensitive device, the spectrum of responding to from light source basic photosensitive pixels farthest in the described compound photosensitive pixels comprises the sky look, green, redness, yellow, white, redness adds infrared colour, and yellow adds infrared colour, and white adds infrared colour.
Described multi-optical spectrum light-sensitive device, the bottom of described compound photosensitive pixels unit are also grown for the lower surface of the basic photosensitive pixels of induction infrared light the better Si Ge crystal layer of pair infrared Absorption or Germanium crystal layer.
Described multi-optical spectrum light-sensitive device, the bottom of described basic photosensitive pixels for responding to infrared light, also plating is provided with the mirror-reflection plated film.
Described multi-optical spectrum light-sensitive device, described compound photosensitive pixels are sampled with active mode and are formed initiatively photosensitive pixels (Active Pixel).
Described multi-optical spectrum light-sensitive device, described compound photosensitive pixels is sampled with passive mode and is formed passive photosensitive pixels (Passive Pixel).
Described multi-optical spectrum light-sensitive device, the basic photosensitive pixels in the described compound photosensitive pixels are light sensitive diode or sensitization door.
Described multi-optical spectrum light-sensitive device, the sensitization mode of described multi-optical spectrum light-sensitive device comprises positive sensitization, back side sensitization, or two-way sensitization mode, described two-way sensitization mode comprise timesharing choosing to, subregion choosing to, or the pixel choosing is to mode.
Described multi-optical spectrum light-sensitive device, described predetermined pattern comprises the repeated arrangement of compound pixel, square formation is arranged, or honeycomb pattern is arranged.
The technique effect that the present invention is useful is:
1, better color sensitive performance and color sensitive and infrared sensitization is integrated.In the present invention, at least two photosensitive pixels layers on the light source irradiation direction are provided with the form of the compound photosensitive pixels that comprises at least two basic photosensitive pixels, basic photosensitive pixels is at each spectral coverage of different layers induction spectrum, like this, by the layout of photosensitive pixels layer on the degree of depth, realized to sense at least two spectral coverages at lip-deep same pixel location of basic unit, thereby better flexibility and more pixel arrangement on this lip-deep compound photosensitive pixels macrocell arranged in patterns are provided, thereby can significantly improve the sensitivity of sensor devices, resolution, and dynamic range.On the other hand, when two photosensitive pixels layers being arranged as one induction visible light, another one induction infrared light then can be realized integrated with visible light and infrared light easily, and colour and infrared light are responded in realization simultaneously.
2, the processing technology of Realization of Product is simple.The present invention can be by adopting existing CCD or CMOS sensitive chip processing technology and equipment, can be used in positive sensitization and can make easily, back side sensitization, or the single-surface double-layer multi-optical spectrum light-sensitive device of two-way sensitization, two-sided double-deck multi-optical spectrum light-sensitive device, and double-sided multi-layer multi-optical spectrum light-sensitive device.Three layers of sensor devices of the Foveon company in the background technology, it is in order to realize color sensitive, thereby must arrange that responding to respectively RGB three looks for 3 layers finishes colored the reconstruction at same position.Yet, such mode, not only difficulty is very big in 3 layers processing, and in wiring, because the lead-in wire of each interlayer needs mutually isolation, 3 layers of lead-in wire have obviously caused the difficulty in the wiring simultaneously.On such basis, if want that also increasing one deck carries out infrared sensitization, almost impossible.And the present invention, then arrange with the pixel pattern on the plane and finish colored the reconstruction, thereby need to not arrange that 3 layers are realized colored the reconstruction at depth direction, thereby be able to arrange at most on the same face that the mode of two-layer basic photosensitive pixels realizes better color sensitive performance.Because at most only arrange two photosensitive pixels layers on the same face, thereby obviously reduced the difficulty of three-dimensional processing technology, and in wiring, also relatively simple.Especially when adopting the two-sided double-deck mode, be that two basic photosensitive pixels in the compound photosensitive pixels are when being arranged in two relative faces, not only the same with the single-surface double-layer mode, has better color sensitive performance, for every one side, it all is reduced to surface manufacturing process, can be after one side be finished the plane machining of a photosensitive pixels layer, basic unit overturn and finish equally the processing of another photosensitive pixels layer with surface manufacturing process at another side, so that processing technology is similar to the technique that adds of existing single-surface single-layer sensor devices.
3, finish colored the reconstruction because sensor devices of the present invention adopts degree of depth spectral filtering and plane pattern to arrange the mode that combines, on the one hand, can not need to do colored plated film, significantly improved yields.On the other hand, can provide the color information of redundancy thereby a lot of bad point and dead point situations, can pass through back-end processing, utilize redundant color information to repair.Thereby reduced on the whole the rate of breakdown of sensor devices.
The present invention will describe a plurality of energy by embodiment and be used for visible light and the bilayer of infrared light and the preferred realization of multilayer multi-optical spectrum light-sensitive device.These preferably realize, only are that the present invention is described as an example, rather than in order to limit protection scope of the present invention.
For the knowledgeable people of relevant industry, the above and other objects and advantages of the present invention, the details of the embodiment that combines description of drawings below reading will be fairly obvious after describing.
Description of drawings
For simplicity, following accompanying drawing description mainly all is take the schematic diagram of light sensitive diode (Photo Diode) as the basis.But nearly all example all can be used for sensitization door (Photo Gate) equally.
Fig. 1 is the schematic diagram of a traditional individual layer light sensitive diode.
Fig. 2 is the schematic diagram of three layers of compound light sensitive diode of a Foveon company invention, and wherein the induction of top layer diode is blue, and the intermediate diode induction is green, and the diode induction of bottom is red.This mode takes full advantage of the penetration depth relation relevant with wavelength of light.We can imagine the difficulty of this sensor devices on pixel reads from this figure: the pixel of three different colors, reading circuit will occupy very large space and difficult wiring.
Fig. 3 (a), (b) are respectively the schematic diagrames of double-deck multi-optical spectrum light-sensitive device related to the present invention.Fig. 3 (a) is applicable to the single-surface double-layer sensor devices, and Fig. 3 (b) is applicable to the two-sided double-deck sensor devices.Degree of depth T wherein
1, T
2, T
3, and T
4According to light in base material (silicon) the incident degree of depth and the relation curve of wavelength decide (Gerald C.Holst andTerrance S.Lomheim, " CMOS/CCD Sensors and Camera Systems ", JCD Publishing, pp.125-125, ISBN 9780819467300,2007).For example, if top layer is expected blueness (or cyan), so wherein T
1Should elect as (or about 4.5um) about 1.5um; And bottom is in order to obtain redness, then T
2And T
4At least should be 8um, T
3At least should be 4.5um.If bottom is in order to obtain yellow, T then
2And T
4At least should be 8um, T
3At least should be 1.5um.The light sensitive diode of top layer and the light sensitive diode of bottom have consisted of a compound diode to (compound photosensitive pixels).When light shines from the top, the light sensitive diode of top layer from light source more close to.When light shines from the bottom, the light sensitive diode of bottom from light source more close to.
What Fig. 4 (a) and Fig. 4 (b) showed is to respond to simultaneously the compound light sensitive diode of visible light and infrared light to (compound photosensitive pixels).In order to accept infrared light, the thickness of the silicon base layer (T among Fig. 3
2And T
4) can be thicker.
Fig. 5 (a) and Fig. 5 (b) are the situation of compound light sensitive diode when being in back side illuminaton in the single-surface double-layer sensor devices, and wherein Fig. 5 (a) only responds to visible light, and Fig. 5 (b) responds to visible light and infrared light simultaneously.In order to make the thickness of two kinds of compound light sensitive diodes substantially the same, can be in the behind of the light sensitive diode of responding to infrared ray, growth absorbs the better germanium of infrared light or Si Ge crystal (SiGe).
Fig. 6 (a) and Fig. 6 (b) are the situation of compound light sensitive diode when being in front illuminated in the two-sided double-deck sensor devices, and wherein Fig. 6 (a) only responds to visible light, and Fig. 6 (b) responds to visible light and infrared ray simultaneously.Equally, in order to make the thickness of two kinds of compound light sensitive diodes substantially the same, can be in the behind of the light sensitive diode of responding to infrared light, growth absorbs the better germanium of infrared light or Si Ge crystal (SiGe).
What Fig. 7 showed is the situation with reading device of the compound light sensitive diode among Fig. 3 (a).The single-surface double-layer sensor devices is because the difficulty that wiring and reading circuit are shared, and realizes so relatively be suitable for usefulness (not with FD and amplifying circuit) passive photosensitive pixels (Passive Pixel).
What Fig. 8 showed is the situation with reading device of the compound diode among Fig. 3 (b).By contrast, the two-sided double-deck sensor devices is when arranging reading circuit, and is also easier and flexible than individual layer sensor devices.Therefore, the two-sided double-deck sensor devices namely can be realized with passive photosensitive pixels (Passive Pixel), also can realize with active photosensitive pixels (Active Pixel), and, with active photosensitive pixels (Active Pixel) when realizing, average each pixel only can be accomplished with 1.5 doors (employing 3T reading circuit), or 1.75 doors (employing 4T reading circuit).
What Fig. 9 showed is that current reasonable 4-point is shared the initiatively reading circuit of photosensitive pixels of 4T, and on average each pixel has adopted 1.75 doors.We illustrate that with this two-layer or multilayer sensor devices of the present invention can adopt reading and sample circuit of current suitable standard.
What Figure 10 showed is an example of the simple two-sided three layers of sensor devices that directly the single-surface double-layer sensor devices are used for double-sided light sensitive and obtain, wherein the front of Figure 10 (a) is one deck, the back side is two-layer, and the front of Figure 10 (b) is two-layer, and the back side is one deck.This be equally three layers sensor devices than three layers of sensor devices of X3 of Foveon company easily and also change how a lot.Notice the difference of Figure 10 and Fig. 2.The photosensitive pixels of three colors is all squeezed on a face among Fig. 2, and only has two pixels among Figure 10 on a face, and another pixel is on another face.
Figure 11 shows is the single-surface double-layer sensor devices to be combined with the double-sided light sensitive mode and a kind of two-sided four layers of sensor devices of producing.This sensor devices of sampling can obtain orchid simultaneously at each image point, and is green, red, and infrared four colors.Although color is more, level is also more, and it is still easy than three layers of sensor devices of X3 of Foveon company to make.
What Figure 12 showed is the example of the double-sided multi-layer sensor devices of three layers and four layers mixing.
What Figure 13 showed is two-layer and the example of the double-sided multi-layer sensor devices of four layers of mixing.
What Figure 14 showed is two-layer and the example of the double-sided multi-layer sensor devices of three layers of mixing.
What Figure 15 and Figure 16 showed is two-layer and the example of the double-deck sensor devices of single or double of one deck mixing.
We have seen the situation of a kind of degeneration of MULTILAYER COMPOSITE photosensitive pixels in Figure 12-16: when one of them of the compound photosensitive pixels of N layer when the empty pixel, so, the compound photosensitive pixels of N layer just is degenerated to the compound photosensitive pixels of (N-1) layer.Just shown that such as Figure 15 and 16 some double-deck photosensitive pixels are degenerated to the situation of individual layer.When wherein two when being empty pixel, the compound photosensitive pixels of N layer just is degenerated to the compound photosensitive pixels of (N-2) layer, so analogizes.
When compound pixel middle level number is inconsistent, can regards the some of them layer as and comprise empty pixel (responding to empty look).Thereby the hybrid multilayer sensor devices is the special case of multilayer sensor devices, and namely the compound pixel of some of them has comprised empty pixel.
These examples fully demonstrate the power of single-surface double-layer sensor devices and two-sided double-deck or multilayer sensor devices.With the technology combination of these two kinds of devices, can produce a series of brand-new colourful high-performance sensor devices.It needs to be noted, in a sensor devices more than three layers, be in the spectrum that the light sensitive diode of every aspect is responded to, must pairwise orthogonal (namely not having in theory public or intersection).
Figure 17 (a) and Figure 17 (b) show is that a kind of square formation is arranged and the vertical view of the two-sided double-deck sensor devices of honeycomb arrangement, wherein FD two-layer shared electric capacity that reads about being.Certainly, if necessary, two-layerly up and down can each read electric capacity with one, even respectively with one group of reading circuit.
The vertical view of two-sided double-deck multispectral (colour the adds infrared) sensor devices that the square formation that Figure 18 (a) shows is arranged, wherein FD is the two-layer shared electric capacity that reads up and down.The vertical view of two-sided double-deck multispectral (colour the adds infrared) sensor devices that the square formation that Figure 18 (b) shows is arranged, wherein FD is the two-layer shared electric capacity that reads up and down.This grand pixel unit that is comprised of two compound pixels also can adopt 4-point illustrated in Figure 9 to share the initiatively reading circuit of photosensitive pixels.Different from the sensor devices of single-surface single-layer, four light sensitive diodes of the shared reading circuit among Figure 18 (b) are distributed on two faces.
Figure 19 shows is that a two-sided double-deck multispectral (colour adds infrared) sensor devices 8-point is shared or the cross-sectional view (having saved 3T or 4T reading circuit) of the shared reading circuit of 4-point.What show here is a kind of extreme, and FD is common situation up and down.For two-sided double-deck multispectral (colour adds infrared) sensor devices, even the 4-point is shared reading circuit, two selections are also arranged: four points of the first are from same, and its two or four points come naturally from different faces.In this figure, we have used another kind of method to improve the absorption efficiency of infrared light, and namely in the behind of germanium or germanium-silicon layer, plating is with specular reflective material (such as aluminium, silver or other cooperate good reflecting material with germanium or silicon person).
Figure 20 shows is that a two-sided double-deck multispectral (colour adds infrared) sensor devices 8-point is shared or the cross-sectional view (having saved 3T or 4T reading circuit) of the shared reading circuit of 4-point.What show here is a kind of simple any FD obstructed situation up and down.When FD was obstructed up and down, all the situation of merchandiser face individual layer was the same end face or bottom surface so.
What Figure 21 showed is a kind of situation of sensor devices of simple making two-sided double-deck.When basic unit is opaque, so, two-layer can obtaining with the method for the single-surface single-layer sensor devices processing of twice of simple repetition up and down.Device on two faces also can be fully independent.This is the simplest a kind of mode that obtains two-way sensor devices.
Figure 22 (a) and Figure 22 (b) show is the situation of a single-surface double-layer sensor devices when being respectively applied to positive sensitization and back side sensitization.Notice light sensitive diode centering two-layer among the figure, the light sensitive diode close to light source obtains more short wavelength's color.
Figure 23 (a) and Figure 23 (b) show is the situation of a two-sided double-deck sensor devices when being respectively applied to positive sensitization and back side sensitization.Notice light sensitive diode two-layer among the figure pair, when light source changes direction, the variation of color.(can be referring to " multi-optical spectrum light-sensitive device and preparation method thereof " (Chinese application number: two-sided double-deck sensor devices 200810217270.2) for bi-directional symmetrical, generally speaking, when light source changes direction, cyan and yellow exchange, blue and red exchange, green constant.
The situation of the front and back of the two-sided double-deck sensor devices of grand pixel 3 the compound light sensitive diodes of employing of Figure 24 (a) and Figure 24 (b) (compound photosensitive pixels).When grand pixel comprises 3 points, usually adopt honeycomb arrangement.
Figure 25, Figure 26, Figure 27 are may realizing of other several two-sided double-deck sensor devices.These diagrams fully show flexibility and the diversified characteristics of two-sided double-deck sensor devices.We for the discussion of compound diode, through reasonably changing, also are applicable to the situation of Figure 22 to Figure 27 in Fig. 3 to Figure 16.We sincerely come principle of specification with a small amount of figure, rather than limit marrow of the present invention and category.
Figure 28 is the principle schematic of a sensitization door (Photo Gate).In above legend, if we will replace with sensitization door (Photo Gate) as the light sensitive diode (Photo Diode) of basic photosensitive pixels, so, can obtain realization and the conclusion of a lot of all fours.
Embodiment
For ease of describing the present invention and explaining it and the difference of prior art, we now provide the definition of following noun: double-deck sensor devices, multilayer sensor devices, double-sided light sensitive device, two-way sensor devices.Wherein, it is two-layer that double-deck sensor devices refers to that photosensitive pixels physically is divided into, and every one deck all contains the photosensitive pixels of responding to special spectrum.The multilayer sensor devices refers to two-layer above sensor devices, true X3 sensor devices such as Foveon company.The double-sided light sensitive device refers to that sensor devices has two photosensitive surfaces, each face can both be at least sensitization on the direction.Two-way sensor devices refers to that sensor devices can be from sensitization on the direction of two (usually are mutually 180 degree), that is can both sensitization from the front and back of sensor devices.
A sensor devices can have bilayer or multilayer simultaneously, and is two-sided, and in two-way these three characteristics one, and two, and all three characteristics.The present invention relates generally to single-surface double-layer sensor devices (shown in Figure 22 (a) and Figure 22 (b)), two-sided double-deck sensor devices (shown in Figure 23 (a) and Figure 23 (b)), and double-sided multi-layer sensor devices (such as Figure 10-14).No matter be single-surface double-layer or two-sided double-deck or multilayer sensor devices, may be used to positive sensitization (shown in Figure 22 (a)), back side sensitization (shown in Figure 22 (b)), or two-way sensitization (such as Figure 21 or shown in Figure 23).But, being used for different lower times of radiation situation, the design of sensor devices is different.
The multi-optical spectrum light-sensitive device of the specific embodiment of the invention, comprise a basic unit, be provided with a plurality of compound photosensitive pixels macrocells according to the predetermined pattern repeated arrangement in described basic unit, described compound photosensitive pixels macrocell comprises at least one compound photosensitive pixels, described compound photosensitive pixels is comprised of at least two basic photosensitive pixels, described basic photosensitive pixels is along every layer of layered arrangement of direction of illumination, and in one side two-layer mode at the most, be distributed in the end face of basic unit, or bottom surface, or end face and bottom surface.It should be noted that, here just express the relative position on basic unit two sides with the concept of end face and bottom surface, and be not restriction to substrate surface absolute physical position, in the following description, used in addition the concept of the front and back of the basic unit that relative light source position describes to express similar implication.
At this, three concepts have been proposed, compound photosensitive pixels macrocell, compound photosensitive pixels, with basic photosensitive pixels, wherein, basic photosensitive pixels is the photosensitive pixels that can not divide again on every one deck, compound photosensitive pixels then is the combination of at least two basic photosensitive pixels, and the basic photosensitive pixels in the compound photosensitive pixels is arranged a basic photosensitive pixels with the arranged in form along the direction of illumination layering at every one deck, described in the aforementioned figures explanation, basic photosensitive pixels can light sensitive diode or the sensitization door realize that when realizing with the light sensitive diode form, then compound photosensitive pixels forms compound light sensitive diode pair.Certainly, it should be noted that, each photosensitive pixels layer in the compound photosensitive pixels, arrange along light source irradiation direction (the normally normal direction of basic unit's photosensitive surface), but do not limit on the face that only is arranged in basic unit, if in the relative two sides with the basic unit of light source irradiation process, one side near light source is that basic unit is positive, one side away from light source is the basic unit back side, so, and each photosensitive pixels layer in the compound photosensitive pixels, can be all positive in basic unit, also can be all at the basic unit back side, perhaps respectively at the front and back of basic unit, but arrange at most two photosensitive pixels layers on a face.Sum up distributing position and the quantitative relation of photosensitive pixels layer, for a light source irradiation direction, the distribution mode of photosensitive pixels layer can have [2,0], [0,2] (single-surface double-layer), [1,1] (two-sided double-deck), [1,2], [2,1], [2,2] (double-sided multi-layer).Wherein, last digit is the photosensitive pixels number of layers that is arranged in the basic unit front in the compound photosensitive pixels, and a rear numeral is for being arranged in the photosensitive pixels number of layers at the basic unit back side in the compound photosensitive pixels.Compound photosensitive pixels macrocell then is the set that can rebuild the compound photosensitive pixels of colored minimum number, also claim grand pixel, (for example be square formation or honeycomb pattern arrangement mode with this compound photosensitive pixels macrocell by predetermined pattern, or repeated arrangement) repeated arrangement, thus can realize colored the reconstruction at the whole plane of delineation.For double-deck multi-optical spectrum light-sensitive device, compound photosensitive pixels macrocell comprises at least two compound pixels usually.But for the double-sided multi-layer multi-optical spectrum light-sensitive device, macrocell can be single compound pixel.
Because a compound photosensitive pixels has polytype, and a plurality of compound photosensitive pixels that is arranged in the basic unit may have different types, so that sensor devices of the present invention has multiple flexibly form.From the angle of a compound photosensitive pixels, according to number and the distribution of its basic photosensitive pixels, can comprise the compound photosensitive pixels of single-surface double-layer, the compound photosensitive pixels of two-sided double-deck, the compound photosensitive pixels of double-sided multi-layer.As previously mentioned, the compound photosensitive pixels of so-called single-surface double-layer and the compound photosensitive pixels of two-sided double-deck, its basic photosensitive pixels all is two, and it is different just to distribute, and the basic photosensitive pixels in the compound photosensitive pixels of single-surface double-layer is the one side layered arrangement in basic unit; And the basic photosensitive pixels in the compound photosensitive pixels of two-sided double-deck is to arrange on the two sides of basic unit.For the compound photosensitive pixels of double-sided multi-layer, its basic photosensitive pixels can be 3 or 4, owing to arrange at the most two-layer photosensitive pixels in basic unit one side, thereby basic photosensitive pixels at this moment must be the two sides that is distributed in basic unit, and wherein having one side at least is the layered arrangement of two basic photosensitive pixels.It should be noted that, a kind of special circumstances of compound photosensitive pixels are wherein to contain free pixel is arranged, this photosensitive pixels is responded to empty look in other words, at this moment, when for example a basic photosensitive pixels in the compound photosensitive pixels of single-surface double-layer is empty pixel, on sensitization validity, it is equivalent to the compound photosensitive pixels of a single-surface single-layer.
Because the eurypalynous characteristics of compound photosensitive pixels, so that when pixel arrangement quite flexible, for example, a pixel location in basic unit is arranged the compound photosensitive pixels of single-surface double-layer, and can arrange the compound photosensitive pixels of two-sided double-deck at its close position, and can arrange the compound photosensitive pixels of double-sided multi-layer in another adjacent locations, in a word, can arrange dissimilar compound photosensitive pixels at the different pixel locations of basic unit, based on these characteristics, especially, sensor devices when compound photosensitive pixels all in the basic unit is same type defines according to compound photosensitive pixels type, for example, when compound photosensitive pixels all in the basic unit is the compound photosensitive pixels of single-surface double-layer, the sensor devices of corresponding formation is called the single-surface double-layer sensor devices, and the sensor devices that above-mentioned other two kinds of compound photosensitive pixels form is then corresponding to be called the two-sided double-deck sensor devices, or the double-sided multi-layer sensor devices.It should be noted that, as aforementioned, owing to may contain in the compound photosensitive pixels free pixel is arranged, thereby so that degeneration has occured in the compound photosensitive pixels of the partial-pixel position of basic unit, for example in a single-surface double-layer sensor devices, if a compound photosensitive pixels contains an empty pixel, then in fact the compound photosensitive pixels of this single-surface double-layer deteriorates to the photosensitive pixels of a single-surface single-layer, thereby so that on details, compound photosensitive pixels in single-surface double-layer sensor devices and not exclusively be the compound photosensitive pixels of single-surface double-layer, but see on the whole, we still classify as the single-surface double-layer sensor devices with the sensor devices of this situation, and are special, can claim that also it is a kind of single-surface double-layer sensor devices of mixing, accordingly, also there are the two-sided double-deck sensor devices of mixing and the double-sided multi-layer sensor devices of mixing.
Basic photosensitive pixels in the compound photosensitive pixels generally is arranged to respond to the different spectral coverage in visible light or visible light and the infrared light sensitization, for example, can be by a spectral coverage of the pairwise orthogonal of each self-induction visible light of the basic photosensitive pixels in the compound photosensitive pixels or visible light and infrared light, by the different spectral coverage of the induction of the basic photosensitive pixels in each the compound photosensitive pixels in the compound photosensitive pixels macrocell and compound photosensitive pixels spectrum, the spectral information that all compound photosensitive pixels of compound photosensitive pixels macrocell are responded to combines and comprises that RGB or CMYK are colored to rebuild necessary spectral information.
Wherein, the spectrum of responding to from the nearest basic photosensitive pixels of light source in the compound photosensitive pixels comprises the sky look, blueness, and green, cyan, white, and white adds infrared colour.The spectrum of responding to from light source basic photosensitive pixels farthest in the compound photosensitive pixels comprises the sky look, green, and redness, yellow, white, redness adds infrared colour, and yellow adds infrared colour, and white adds infrared colour.
More than be the explanation how photosensitive pixels among the present invention is arranged, the processing that the multi-optical spectrum light-sensitive device of the specific embodiment of the invention is described below realizes.Material according to basic unit is different, and for the realization of single-surface double-layer multi-optical spectrum light-sensitive device, a kind of way is:
Get the N basic unit (such as Fig. 5 (a)) of a silicon crystal, a pixel location on this N basic unit one side, depth requirements according to color, done the P impurity of certain depth inserts to basic unit inside by this pixel location surface, form a P doped layer, this P doped layer is a photosensitive layer of compound photosensitive pixels, has also namely formed a basic photosensitive pixels in the compound photosensitive pixels.Then doing other the N impurity of certain depth at this P doped layer inserts, be formed on the N doped layer in the P doped layer, this N doped layer is another photosensitive layer of compound photosensitive pixels, also namely formed another the basic photosensitive pixels in the compound photosensitive pixels, at this moment, the compound photosensitive pixels of this single-surface double-layer is that composite junction by P-N-P forms.
Another kind of way is, get the P basic unit (such as Fig. 5 (b)) of a silicon crystal, a pixel location on this P basic unit one side, depth requirements according to color, done the N impurity of certain depth inserts to basic unit inside by this pixel location surface, form a N doped layer, this N doped layer is a photosensitive layer of compound photosensitive pixels, has also namely formed a basic photosensitive pixels in the compound photosensitive pixels.Then doing other the P impurity of certain depth at this N doped layer inserts, be formed on the P doped layer in the N doped layer, this P doped layer is another photosensitive layer of compound photosensitive pixels, also namely formed another the basic photosensitive pixels in the compound photosensitive pixels, at this moment, the compound photosensitive pixels of this single-surface double-layer is that composite junction by N-P-N forms.
Foregoing description is the making of a compound photosensitive pixels, making for other the compound photosensitive pixels on basic unit's photosurface, its processing mode is identical, and just at different pixel locations, the degree of depth that impurity is inserted determines according to the wavelength of the spectrum of the color of the desired induction of corresponding pixel and different.
The realization of two-sided double-deck multi-optical spectrum light-sensitive device:
Get the N basic unit (such as Fig. 4 (a)) of a silicon crystal, the pixel of front surface is classified by required color, and the P that each class pixel is done certain depth by the color depth demand mixes.Equally, also the pixel at the back side is classified by required color, and the P that each class pixel is done certain depth according to the depth requirements of color mixes.The degree of depth that P impurity is inserted is determined by the wavelength of the spectrum of desired induction.
Another kind of more superior way is, gets the P basic unit (such as Fig. 4 (b)) of a silicon crystal, and by required color classification, and the N that each class pixel is done certain depth by the color depth demand mixes with the pixel of front surface.Equally, also the pixel at the back side is pressed required color classification, and the N that each class pixel is done certain depth according to the depth requirements of color mixes.The degree of depth that N impurity is inserted is determined by the wavelength of the spectrum of desired induction.The compound photosensitive pixels of two-sided double-deck that the compound photosensitive pixels of two-sided double-deck that this N-P-N composite junction forms forms than top P-N-P composite junction is superior to be because mobile strong than P of N.
The realization of double-sided multi-layer multi-optical spectrum light-sensitive device:
Get N or the P basic unit (such as Fig. 9-14) of a silicon crystal, with the mode of front surface with single-surface double-layer or individual layer, make one or two photosensitive pixels layer, with the mode of the back side with single-surface double-layer or individual layer, make one or two photosensitive pixels layer.The difference that is set up according to these cloth, the composite junction that consists of a compound photosensitive pixels of double-sided multi-layer comprises N-P-N, P-N-P, N-P-N-P, P-N-P-N, N-P-N-P-N, and the multiple situation such as P-N-P-N-P.
After obtaining compound photosensitive pixels, if photosignal need to be read, also need to arrange reading circuit and other control circuits.The layout of reading circuit and other control circuit is according to passive pixel (Passive Pixel) or initiatively pixel (Active Pixel) designs, if select the initiatively design of pixel, so, except the light sensitive diode such as Fig. 3 (a), also have reading circuit as shown in Figure 7, and the standard time sequence of not indicating among many figure and control circuit.
For the photosensitive pixels layer that is used for responding to infrared light, can namely should be used for the photosensitive pixels layer lower surface of induction infrared light at the back side of its correspondence position, regrowth germanium or Si Ge crystal layer are to improve the absorption efficiency of infrared spectrum.In addition, also can be after grown germanium or Si Ge crystal, arrange again and utilize aluminium matter, silver or mirror-reflection plated film that other materials is made, in order to will there not be absorbed infrared photon to reflect back, thereby again absorbed by infrared photosensitive pixels layer.The intensity of reflection decides according to thickness and the absorptivity of infrared photosensitive pixels layer, in order to avoid other pixel is produced unnecessary interference.
If be used for two-way sensitization, and adopt " multi-optical spectrum light-sensitive device and preparation method thereof " (Chinese application number: 200810217270.2) described pixel choosing to or the subregion choosing to mode, so, some pixel class or pixel region in the front are coated the shading plated film, and overleaf other pixel class or pixel region are coated the shading plated film.
In above realization, we can replace light sensitive diode (PhotoDiode) with sensitization door (Photo Gate) fully, thereby obtain take the single-surface double-layer of sensitization door as the basis, two-sided double-deck, and double-sided multi-layer sensor devices.
Because the single-surface double-layer that the present invention obtains, two-sided double-deck, or the double-sided multi-layer sensor devices provides redundant color information, therefore, for all very crucial application (for example mobile phone) of a lot of costs and size, the compound pixel of part can comprise the sky pixel, thus the mixing single-surface double-layer that obtains degenerating, mix two-sided double-deck, and mix the double-sided multi-layer sensor devices.
The present invention both can make of technology and the technique of CCD, also can make of technology and the technique of CMOS.Because the hypersensitivity that the present invention brings, basic pixel namely can with the mode of passive photosensitive pixels (Passive Pixel), also can adopt the mode of active photosensitive pixels (Active Pixel) to read.These characteristics so that the present invention merges fully with existing ripe semiconductor sensitive chip manufacturing technology, thereby can be widely used.The present invention is in the performance that significantly improves sensitive chip and function, because the raising of yields also can reduce or not increase at least cost.
The present invention is by optimally being arranged in the basic photosensitive pixels in the compound photosensitive pixels on two degree of depth, and formation single-surface double-layer, two-sided double-deck, polytype with the double-sided multi-layer sensor devices, greatly expand the kind of sensitive chip, and realized physically first overlapping and integrated on one chip of infrared sensitization and color sensitive.
Also do on its basis nature and slight accommodation (as adding filter coating) according to production method provided by the invention, just can pass through single-surface double-layer, two-sided double-deck, the form of list or double-sided multi-layer forms (empty look, white), (blueness, yellow), (blueness, green), (green, redness), (blueness, red), (blueness, red+infrared), (blueness, yellow+infrared), (empty look, white+infrared), (white+infrared), bilayer or MULTILAYER COMPOSITE photosensitive pixels that the visible light that (blue/green/red/blue or green/yellow/white, infrared) etc. is corresponding all or visible light add quadrature in the infrared light.
The present invention is by aforementioned two-sided, two-way, double-deck, and the application of the sensitization mode such as multilayer, thereby can be used for two-way photosensitive system with single sensor devices, greatly reduce system cost, and is reduced in size, reduces system complexity; And so that some need to receive in same system the application of multispectral or multi-direction the multispectral signal of both direction (or from), become possibility.For example, be used at present the pill camera of inspection patient's gastrointestinal system, only at one photographic head be housed.For obtaining the image of a certain position of gastrointestinal system, may need shooting repeatedly, thereby bring great misery and huge economic cost to patient.For this reason, then need to improve the coverage of single shot, and if photographic head need to also be housed at the other end of pill camera, adopt the prior art means, just must in a very little space, fill two cover systems, larger difficulty is arranged in the realization.And employing the present invention, only needing increases a camera lens in the other end, and its sensitive chip still just adopts a slice, less demanding to the space not only, and also Financial cost also is lower than the cost of two cover systems.In addition, the present invention can on a monitoring camera, monitor former and later two directions, for the 3G mobile that former and later two cameras much are housed, adopt the present invention, can replace with a bidirectional camera shooting head, switch the switching that realizes the front and back scene by electronics or machinery.For the supervisory control system of some luxurious hotels, it just can no longer need two cover supervisory control systems to monitor respectively both direction, and only need can finish necessary monitoring once the cover supervisory control system if the scene at the two ends of monitoring corridor adopts the present invention.
The mode that usefulness provided by the invention is integrated on same (CMOS or CCD semiconductor) device, realizes sensitization colored and infrared the time, and coloured image and infrared image are overlapping in the locus.Novel like this sensor devices has greatly been expanded the dynamic range of sensor devices, thereby satisfies automobile, high performance requirements in the fields such as security protection. moreover, it is used for undersized color sensitive device, and the camera as mobile phone is used also can improve image quality significantly.
Although the present invention is described preferably to be embodied as example, this announcement should not be understood to have restricted.Be skillful in the people that image sensor devices (such as semiconductor chip) is pored over again this paper for those, many variations and performance all are possible, these variations and performance still drop on category of the present invention, as long as they belong to true essentials of the present invention and simple change.
Claims (22)
1. multi-optical spectrum light-sensitive device, it is characterized in that, comprise a basic unit, be provided with a plurality of compound photosensitive pixels macrocells according to the predetermined pattern repeated arrangement in described basic unit, described compound photosensitive pixels macrocell comprises at least one compound photosensitive pixels, and the basic photosensitive pixels in the described compound photosensitive pixels comprises 2, is arranged in end face and the bottom surface of basic unit, form the compound photosensitive pixels of two-sided double-deck
The compound photosensitive pixels of described two-sided double-deck is by forming by all do the P P-N-P composite junction that (Pdoping) obtain that mixes in the end face of the basic unit of a N silicon and bottom surface, perhaps,
The compound photosensitive pixels of described two-sided double-deck is by forming by all do the N N-P-N composite junction that (Ndoping) obtain that mixes in the end face of the basic unit of a P silicon and bottom surface.
2. multi-optical spectrum light-sensitive device as claimed in claim 1, it is characterized in that, a spectral coverage of the pairwise orthogonal of each self-induction visible light of the basic photosensitive pixels in the described compound photosensitive pixels or visible light and infrared light, the spectral information that the compound photosensitive pixels of all of described compound photosensitive pixels macrocell is responded to combine and comprise RGB or the necessary spectral information of the colored reconstruction of CMYK.
3. multi-optical spectrum light-sensitive device as claimed in claim 1 is characterized in that, the spectrum of responding to from the nearest basic photosensitive pixels of light source in the described compound photosensitive pixels comprises the sky look, blueness, and green, cyan, white, and white adds infrared colour.
4. multi-optical spectrum light-sensitive device as claimed in claim 1 is characterized in that, the spectrum of responding to from light source basic photosensitive pixels farthest in the described compound photosensitive pixels comprises sky look, green, redness, yellow, white, redness adds infrared colour, and yellow adds infrared colour, and white adds infrared colour.
5. multi-optical spectrum light-sensitive device as claimed in claim 1 is characterized in that, the bottom of described compound photosensitive pixels unit is also grown for the lower surface of the basic photosensitive pixels of induction infrared light the better Si Ge crystal layer of pair infrared Absorption or Germanium crystal layer.
6. multi-optical spectrum light-sensitive device as claimed in claim 5 is characterized in that, the bottom of described basic photosensitive pixels for responding to infrared light, and also plating is provided with the mirror-reflection plated film.
7. such as the described multi-optical spectrum light-sensitive device of claim 1-6 any one, it is characterized in that described compound photosensitive pixels is sampled with active mode and formed initiatively photosensitive pixels (Active Pixel).
8. such as the described multi-optical spectrum light-sensitive device of claim 1-6 any one, it is characterized in that described compound photosensitive pixels is sampled with passive mode and formed passive photosensitive pixels (Passive Pixel).
9. such as the described multi-optical spectrum light-sensitive device of claim 1-6 any one, it is characterized in that the basic photosensitive pixels in the described compound photosensitive pixels is light sensitive diode or sensitization door.
10. such as the described multi-optical spectrum light-sensitive device of claim 1-6 any one, it is characterized in that the sensitization mode of described multi-optical spectrum light-sensitive device comprises positive sensitization, back side sensitization, or two-way sensitization mode, described two-way sensitization mode comprise timesharing choosing to, subregion choosing to, or the pixel choosing is to mode.
11., it is characterized in that described predetermined pattern comprises the square formation arrangement of compound pixel, or honeycomb pattern is arranged such as the described multi-optical spectrum light-sensitive device of claim 1-6 any one.
12. multi-optical spectrum light-sensitive device, it is characterized in that, comprise a basic unit, in described basic unit, be provided with a plurality of compound photosensitive pixels macroelements according to the predetermined pattern repeated arrangement, described compound photosensitive pixels macroelement comprises at least one compound photosensitive pixels, basic photosensitive pixels in described compound photosensitive pixels comprises 3 or 4, wherein two-layer layout is divided in two end faces in basic unit or bottom surface, remaining basic photosensitive pixels is divided one deck or two-layer layout at bottom surface or the end face of basic unit, form the compound photosensitive pixels of double-sided multi-layer
The compound photosensitive pixels of described double-sided multi-layer is by mixing by all being P in the end face of the N of silicon basic unit and bottom surface, and is that N mixes and the P-N-P that obtains at the P doped layer again, and N-P-N-P, P-N-P-N, the composite junction of N-P-N-P-N form, perhaps,
The compound photosensitive pixels of described double-sided multi-layer is by mixing by all being N in the end face of the P of silicon basic unit and bottom surface, and is the N-P-N that P mixes and obtains at the N doped layer again, N-P-N-P, and P-N-P-N, or the composite junction of P-N-P-N-P forms.
13. multi-optical spectrum light-sensitive device as claimed in claim 12, it is characterized in that, a spectral coverage of the pairwise orthogonal of each self-induction visible light of the basic photosensitive pixels in the described compound photosensitive pixels or visible light and infrared light, the spectral information that the compound photosensitive pixels of all of described compound photosensitive pixels macrocell is responded to combine and comprise RGB or the necessary spectral information of the colored reconstruction of CMYK.
14. multi-optical spectrum light-sensitive device as claimed in claim 12 is characterized in that, the spectrum of responding to from the nearest basic photosensitive pixels of light source in the described compound photosensitive pixels comprises the sky look, blueness, and green, cyan, white, and white adds infrared colour.
15. multi-optical spectrum light-sensitive device as claimed in claim 12 is characterized in that, the spectrum of responding to from light source basic photosensitive pixels farthest in the described compound photosensitive pixels comprises sky look, green, redness, yellow, white, redness adds infrared colour, and yellow adds infrared colour, and white adds infrared colour.
16. multi-optical spectrum light-sensitive device as claimed in claim 12 is characterized in that, the bottom of described compound photosensitive pixels unit is also grown for the lower surface of the basic photosensitive pixels of induction infrared light the better Si Ge crystal layer of pair infrared Absorption or Germanium crystal layer.
17. multi-optical spectrum light-sensitive device as claimed in claim 16 is characterized in that, the bottom of described basic photosensitive pixels for responding to infrared light, and also plating is provided with the mirror-reflection plated film.
18., it is characterized in that described compound photosensitive pixels is sampled with active mode and formed initiatively photosensitive pixels (Active Pixel) such as the described multi-optical spectrum light-sensitive device of claim 12-17 any one.
19., it is characterized in that described compound photosensitive pixels is sampled with passive mode and formed passive photosensitive pixels (Passive Pixel) such as the described multi-optical spectrum light-sensitive device of claim 12-17 any one.
20., it is characterized in that the basic photosensitive pixels in the described compound photosensitive pixels is light sensitive diode or sensitization door such as the described multi-optical spectrum light-sensitive device of claim 12-17 any one.
21., it is characterized in that the sensitization mode of described multi-optical spectrum light-sensitive device comprises positive sensitization such as the described multi-optical spectrum light-sensitive device of claim 12-17 any one, back side sensitization, or two-way sensitization mode, described two-way sensitization mode comprise timesharing choosing to, subregion choosing to, or the pixel choosing is to mode.
22., it is characterized in that described predetermined pattern comprises the square formation arrangement of compound pixel, or honeycomb pattern is arranged such as the described multi-optical spectrum light-sensitive device of claim 12-17 any one.
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| PL2725616T3 (en) * | 2011-06-24 | 2018-01-31 | Boly Media Comm Shenzhen Co | Multi scene depth photo sensitive device, system thereof, scene depth expanding method, and optical imaging system |
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| US4514755A (en) * | 1983-07-08 | 1985-04-30 | Fuji Photo Film Co., Ltd. | Solid-state color imager with two layer three story structure |
| CN101345248A (en) * | 2007-07-09 | 2009-01-14 | 博立码杰通讯(深圳)有限公司 | Multi-optical spectrum light-sensitive device and preparation thereof |
| CN101740587A (en) * | 2008-11-05 | 2010-06-16 | 博立码杰通讯(深圳)有限公司 | Multispectral sensitization device and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6864557B2 (en) * | 2001-06-18 | 2005-03-08 | Foveon, Inc. | Vertical color filter detector group and array |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4514755A (en) * | 1983-07-08 | 1985-04-30 | Fuji Photo Film Co., Ltd. | Solid-state color imager with two layer three story structure |
| CN101345248A (en) * | 2007-07-09 | 2009-01-14 | 博立码杰通讯(深圳)有限公司 | Multi-optical spectrum light-sensitive device and preparation thereof |
| CN101740587A (en) * | 2008-11-05 | 2010-06-16 | 博立码杰通讯(深圳)有限公司 | Multispectral sensitization device and manufacturing method thereof |
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