CN101807566A - Compound crystal type light-emitting diode assembly and manufacturing method thereof - Google Patents
Compound crystal type light-emitting diode assembly and manufacturing method thereof Download PDFInfo
- Publication number
- CN101807566A CN101807566A CN200910006678A CN200910006678A CN101807566A CN 101807566 A CN101807566 A CN 101807566A CN 200910006678 A CN200910006678 A CN 200910006678A CN 200910006678 A CN200910006678 A CN 200910006678A CN 101807566 A CN101807566 A CN 101807566A
- Authority
- CN
- China
- Prior art keywords
- chip
- scattering layer
- scatterer
- emitting diode
- type light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
The invention relates to a compound crystal type light-emitting diode assembly and a manufacturing method thereof. The compound crystal type light-emitting diode assembly comprises a lead frame, a plurality of chips, a first scattering layer and a second scattering layer, wherein the lead frame is provided with a load bearing part; the plurality of chips are configured on the loading bearing part, and each chip at least comprises a first chip and a second chip; the first scattering layer covers the first chip in a conformal way, only exposes an electrode of the first chip and only consists of a scatterer without containing a high molecular material; and the second scattering layer covers the second chip in a conformal way, only exposes an electrode of the second chip and only consists of the scatterer without containing the high molecular material. The invention can enhance the accuracy of an angle, effectively respectively control the light-emitting angles of different chips after the different chips are packaged and enhance the stability of the light-emitting angles, and the like; besides, the invention achieves the light mixing effect without additionally using a drive circuit, thereby simplifying the design of the drive circuit.
Description
Technical field
The present invention relates to a kind of light-emitting diode component and manufacture method thereof, particularly a kind of compound crystal type (multi-chips) light-emitting diode component and manufacture method thereof.
Background technology
Light-emitting diode (Light Emitting Diode, be called for short LED) have advantages such as high brightness, volume are little, in light weight, cracky, low power consumption and life-span be not long because of it, so be widely used in the various demonstration product, its principle of luminosity is as follows: apply a voltage on diode, the electronics that orders about in the diode combines with electric hole, and this discharges in conjunction with the form of the energy that is produced with light.
Encapsulate in (two or more light-emitting diode chip for backlight unit are packaged in single diode assembly) with the compound crystal form at light-emitting diode, twin crystal or three crystalline substances are more common types.With three crystalline substances is example, and client cooperates drive circuit as mixed light or the indivedual luminous application of single die in the use usually.In general, the client will draw up an angle on target, yet, because three crystalline substances are arranged in identical bearing base, in the time of on traditional handicraft, angle will being adjusted, only adjust angle by bottom and sidewall formation scattering layer at bearing base, allow three chips make angle adjustment simultaneously, as United States Patent (USP) 5,266,817.Yet the putting position of different-waveband chip will have different influences to scattering layer, is difficult to allow three chips reach needed angle simultaneously.
In addition, Japan Patent 2001210874 discloses a kind of light-emitting diode with the encapsulation of monocrystalline form, and it utilizes fluorescence and mixed with resin, forms a scattering layer (film thickness of this rete is inconsistent) at grain surface; And Taiwan patent 595018 discloses a kind of light-emitting diode monocrystalline form encapsulation, and it utilizes two-layer resin bed with different phosphate luminescent material concentration as scattering layer, in the groove of inserting bearing base fully and being constituted.Above-mentioned prior art only encapsulates at the monocrystalline form of light-emitting diode, because using resin, it mixes with scattering material, only utilize resin to coat and fixing scattering material, if scatterer ratio per unit resin volume under of will being controlled at all equates to be unusual difficulty, therefore be difficult for precisely control angle lifting accuracy.If above-mentioned technology is applied in the encapsulation of light-emitting diode compound crystal form, this scattering layer (being mixed by resin and scattering material) will allow three chips make angle adjustment simultaneously, can't be used for controlling respectively three chips, make it reach needed angle simultaneously.
In view of this, the light-emitting diode technology is demanded a kind of assembling structure and technology mode of novelty urgently, to solve the above-mentioned problem of mentioning.
Summary of the invention
In sum, the present invention proposes a kind of compound crystal type light-emitting diode assembly and manufacture method thereof, utilize identical or different scatterer and scattering layer thickness to control the lighting angle of each chip respectively, and this scattering layer does not contain other composition of thinking except scatterer, therefore can promote the angle accuracy, effectively control the lighting angle after the different Chip Packaging respectively, and increase its stability.
According to a preferred embodiment of the present invention, this compound crystal type light-emitting diode assembly comprises a lead frame, and wherein this lead frame has a supporting part; Be disposed at a plurality of chips of this supporting part, described chip comprises one first chip and one second chip at least; One first scattering layer conformally (conformally) covers this first chip, only exposes the electrode of this first chip, and wherein this first scattering layer only is made of a scatterer, does not comprise macromolecular material; And one second scattering layer conformally cover this second chip, only expose the electrode of this second chip, wherein this second scattering layer only is made of a scatterer, does not comprise macromolecular material.
In addition, another preferred embodiment according to the present invention, the present invention also provides the manufacture method of above-mentioned compound crystal type light-emitting diode assembly, and a lead frame is provided, and wherein this lead frame has a supporting part; And dispose the supporting part of a plurality of chips in this lead frame, wherein said chip comprises one first chip and one second chip at least, and one first scattering layer conformally covers this first chip, the electrode that only exposes this first chip, wherein this first scattering layer only is made of a scatterer, do not comprise macromolecular material, and one second scattering layer conformally covers this second chip, the electrode that only exposes this second chip, wherein this second scattering layer only is made of a scatterer, does not comprise macromolecular material.In addition, the generation type of this scattering layer comprises following steps: with chip configuration on a fid; Form a rete that contains scatterer and conformally cover the surface that the not supported material of this chip covers; And graphically this contains the rete of scatterer, to form this scattering layer, the electrode of exposed chip.
Can promote the angle accuracy by the present invention, can control the lighting angle after the different Chip Packaging effectively respectively, and increase advantages such as its stability, in addition, because each chip only need utilize the scattering layer of its coupling to regulate and control lighting angle, do not need additionally to use drive circuit to reach the mixed light effect, but the therefore design of simplified driving circuit.
Below illustrate further method of the present invention, feature and advantage by a plurality of embodiment and comparing embodiment, but be not to be used for limiting the scope of the invention, scope of the present invention should be as the criterion with appending claims institute restricted portion.
Description of drawings
Fig. 1 a and Fig. 1 b are the spendable grainiess schematic diagram of a compound crystal type light-emitting diode assembly of the present invention.
Fig. 2 to Fig. 4 shows described its making flow process profile of chip with scattering layer of one embodiment of the invention.
Fig. 5 a and Fig. 5 b are the described compound crystal type light-emitting diode assembly schematic diagram of one embodiment of the invention.
Wherein, description of reference numerals is as follows:
Fid～10; Crystal grain～12;
Rete～14 that contain scatterer; Scattering layer～16;
Electrode～18; First chip～20;
Second chip～22; The 3rd chip～24;
Lead frame～30; Supporting part～32;
Compound crystal type light-emitting diode assembly～100.
Embodiment
Below, conjunction with figs. describes the manufacture method of the described light-emitting diode component encapsulating structure of embodiments of the invention in detail.
At first, before carrying out solid crystalline substance, ((a plurality of crystal grain are arranged to expand crystalline substance on a fid (for example blue film) 10 to can be the crystal grain (please refer to Fig. 1 a) or the crystal grain of pad (please refer to Fig. 1 b)) of single pad (pad) with the first type crystal grain of well cutting, please refer to Fig. 2, give an example at this crystal grain 12 with two pad), employed crystal grain is the first identical type crystal grain; Then, be conformally formed a rete 14 that contains scatterer, cover the surface that the not supported material 10 of this crystal grain 12 covers fully, please refer to Fig. 3.Wherein, this material and thickness (T) thereof that contains the rete 14 of scatterer is mainly allocated according to these crystal grain 12 needed angles.Then, please refer to Fig. 4, graphically this contains the rete 14 of scatterer, to form this scattering layer 16, exposes the electrode 18 of the first type crystal grain 12.Then, chip by removing on this fid 10, is so far finished first chip 20 of the present invention.The substrate of employed crystal grain can comprise sapphire substrate, carborundum or semiconductor substrate, and emission wavelength is different visible wavelength or invisible light wavelength; Scatterer can comprise the scatterer or the fluorescent material of siliceous compound or siliceous oxide (for example: silica, silicon nitride, silicon oxynitride or carborundum), metal or metallic compound (for example: silver, gold or its oxide), nano-scale.Forming this mode that contains the rete of scatterer comprises: colloidal sol rubbing method, method of spin coating, chemical vapour deposition technique, galvanoplastic and vapour deposition method, and wherein graphical this mode that contains the rete of scatterer comprises: exposure imaging or lithography.In addition, being used for graphically, this material that contains the rete of scatterer comprises positive light anti-etching agent, negative type photoresist or blue film.
Then, use one second type crystal grain, reach one the 3rd type crystal grain, and the method for this first chip 20 of the above-mentioned manufacturing of foundation, and, make one second chip and one the 3rd chip respectively according to thickness and material that this second type and the needed angle of the 3rd type crystal grain are allocated the rete that contains scatterer.According to as can be known above-mentioned, this first, second and third chip, its lighting angle utilizes identical or different scatterer respectively, and identical or different scattering layer thickness is allocated, and this scattering layer does not contain other composition of thinking except scatterer, therefore can promote the angle accuracy, can control the lighting angle after the different Chip Packaging effectively respectively, and increase its stability.
With reference to Fig. 5 a of the present invention and Fig. 5 b, first, second and third chip 20,22 and 24 with gained is disposed at respectively in the supporting part 32 in the lead frame 30, to form a compound crystal type light-emitting diode assembly 100.This compound crystal type light-emitting diode assembly 100 can be twin crystal structure dress mode (as Fig. 5 b), or three brilliant structures dress forms (as Fig. 5 a), or the structure dress mode of other four crystalline substance, five crystalline substances or the like, to reach the different demands of client.Compound crystal type light-emitting diode assembly of the present invention, can utilize identical or different scatterer respectively except above-described, and identical or different scattering layer thickness is allocated, and this scattering layer does not contain other composition except scatterer, therefore can promote the angle accuracy, can control the lighting angle after the different Chip Packaging effectively respectively, and increase advantages such as its stability, because each chip only need utilize the scattering layer of its coupling to regulate and control lighting angle, do not need additionally to use drive circuit to reach the mixed light effect, but the therefore design of simplified driving circuit.
Though the present invention discloses as above with preferred embodiment; yet it is not in order to limit the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; when can doing a little change and modification, so protection scope of the present invention is as the criterion when looking appended claims institute restricted portion.
Claims (10)
1. compound crystal type light-emitting diode assembly comprises:
One lead frame has a supporting part;
A plurality of chips are disposed at this supporting part, and described chip comprises one first chip and one second chip at least;
One first scattering layer conformally covers this first chip, only exposes the electrode of this first chip, and wherein this first scattering layer only is made of a scatterer, does not comprise macromolecular material; And
One second scattering layer conformally covers this second chip, only exposes the electrode of this second chip, and wherein this second scattering layer only is made of a scatterer, does not comprise macromolecular material.
2. compound crystal type light-emitting diode assembly as claimed in claim 1, wherein the scatterer of this first scattering layer and this second scattering layer can be respectively identical or different siliceous compound or siliceous oxide.
3. compound crystal type light-emitting diode assembly as claimed in claim 1, wherein the scatterer of this first scattering layer and this second scattering layer can be respectively identical or different metal or metallic compound.
4. compound crystal type light-emitting diode assembly as claimed in claim 1, wherein the scatterer of this first scattering layer and this second scattering layer can be respectively identical or different fluorescent material.
5. the manufacture method of a compound crystal type light-emitting diode assembly comprises:
One lead frame is provided, and wherein this lead frame has a supporting part; And
Dispose the supporting part of a plurality of chips in this lead frame, wherein said chip comprises one first chip and one second chip at least;
One first scattering layer is conformally covered this first chip, only expose the electrode of this first chip, wherein this first scattering layer only is made of a scatterer, does not comprise macromolecular material; And
One second scattering layer is conformally covered this second chip, only expose the electrode of this second chip, wherein this second scattering layer only is made of a scatterer, does not comprise macromolecular material.
6. the manufacture method of compound crystal type light-emitting diode assembly as claimed in claim 5, wherein the generation type of this scattering layer comprises following steps:
With chip configuration on a fid;
Form a rete that contains scatterer and conformally cover the surface that the not supported material of this chip covers; And
Graphical this contains the rete of scatterer, exposes the electrode of this chip, to form this scattering layer.
7. the manufacture method of compound crystal type light-emitting diode assembly as claimed in claim 5, wherein the scatterer of this first scattering layer and this second scattering layer can be respectively identical or different siliceous compound or siliceous oxide.
8. the manufacture method of compound crystal type light-emitting diode assembly as claimed in claim 5, wherein the scatterer of this first scattering layer and this second scattering layer can be respectively identical or different metal or metallic compound.
9. the manufacture method of compound crystal type light-emitting diode assembly as claimed in claim 5, wherein the scatterer of this first scattering layer and this second scattering layer can be respectively identical or different fluorescent material.
10. the manufacture method of compound crystal type light-emitting diode assembly as claimed in claim 5, wherein the thickness of this first scattering layer and this second scattering layer is identical or different, to adjust this first chip and this second chip respectively to separately lighting angle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910006678XA CN101807566B (en) | 2009-02-13 | 2009-02-13 | Compound crystal type light-emitting diode assembly and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910006678XA CN101807566B (en) | 2009-02-13 | 2009-02-13 | Compound crystal type light-emitting diode assembly and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101807566A true CN101807566A (en) | 2010-08-18 |
| CN101807566B CN101807566B (en) | 2012-08-22 |
Family
ID=42609286
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910006678XA Expired - Fee Related CN101807566B (en) | 2009-02-13 | 2009-02-13 | Compound crystal type light-emitting diode assembly and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101807566B (en) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102004021231B4 (en) * | 2004-04-30 | 2012-12-06 | Osram Opto Semiconductors Gmbh | Method for depositing a luminescence conversion material |
| US7350933B2 (en) * | 2005-05-23 | 2008-04-01 | Avago Technologies Ecbu Ip Pte Ltd | Phosphor converted light source |
| TWI291244B (en) * | 2005-07-07 | 2007-12-11 | Formosa Epitaxy Inc | Light emitting diode and light emitting diode package |
| JP5027427B2 (en) * | 2006-02-23 | 2012-09-19 | パナソニック株式会社 | White illumination device using light emitting diode |
| CN201069057Y (en) * | 2007-02-16 | 2008-06-04 | 厦门通士达照明有限公司 | High light efficiency high coloration LED lamp |
-
2009
- 2009-02-13 CN CN200910006678XA patent/CN101807566B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN101807566B (en) | 2012-08-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7075225B2 (en) | White light emitting device | |
| US20030168964A1 (en) | Nanowire light emitting device and display | |
| US7319245B2 (en) | Radiation emitting semiconductor component with luminescent conversion element | |
| CN103081141B (en) | Light-emitting device and manufacture method thereof | |
| JP5076121B2 (en) | Light emitting diode device and manufacturing method thereof | |
| TWI401820B (en) | A light emitting element and thereof method | |
| JP2008218511A (en) | Semiconductor light emitting device and method formanufacturing the same | |
| US8735913B2 (en) | Light emitting semiconductor structure | |
| US20110089815A1 (en) | Light-emitting device | |
| JP2009130301A (en) | Light-emitting element and method of manufacturing the same | |
| TW200910644A (en) | Phosphor coating method for light emmitting semiconductor device and applications thereof | |
| JP2003286480A (en) | Improved coated fluorescent filler and method for forming the same | |
| JP2007066969A (en) | White light emitting diode and its fabrication process | |
| US20050264194A1 (en) | Mold compound with fluorescent material and a light-emitting device made therefrom | |
| CN107134521A (en) | Opto-semiconductor device | |
| CN107148684A (en) | Light-emitting device | |
| JP2010087267A (en) | Led light-emitting device | |
| CN102222749A (en) | Light emitting component and module thereof | |
| JP2007116117A (en) | Light emitting device | |
| CN107710426A (en) | Light-emitting device | |
| JP2015211058A (en) | Semiconductor light emitting device and manufacturing method of the same | |
| CN112166354A (en) | Wavelength conversion element and light source device | |
| CN101807566B (en) | Compound crystal type light-emitting diode assembly and manufacturing method thereof | |
| KR101901890B1 (en) | Luminescence device | |
| US8378364B2 (en) | Multi-chip light emitting diode and method for fabricating the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120822 Termination date: 20210213 |