CN101801601A - Polishing pad and method of use - Google Patents

Polishing pad and method of use Download PDF

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Publication number
CN101801601A
CN101801601A CN200880107121A CN200880107121A CN101801601A CN 101801601 A CN101801601 A CN 101801601A CN 200880107121 A CN200880107121 A CN 200880107121A CN 200880107121 A CN200880107121 A CN 200880107121A CN 101801601 A CN101801601 A CN 101801601A
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polishing
polishing pad
wafer
polished surface
pad
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拉杰夫·巴贾
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Semiquest Inc
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Semiquest Inc
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H01L21/32125—Planarisation by chemical mechanical polishing [CMP] by simultaneously passing an electrical current, i.e. electrochemical mechanical polishing, e.g. ECMP

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

A polishing pad has one or more polishing elements made from a hydrogel material having an intrinsic ability to absorb water. The hydrogel material may or may not have micropores, but has a water absorption capability of 4% - 60% by weight, a wet tensile strength greater than 1000 psi, a flexural modulus greater than 2000 psi, and a wet Shore D hardness between 25-80, inclusive. The hydrogel material may be made from one or a combination of the following moeties: urethane, alkylene oxides, esters, ethers, acrylic acids, acrylamides, amides, imides, vinylalcohols, vinylacetates, acrylates, methacrylates, sulfones, urethanes, vinylchlorides, etheretherketones, and/or carbonates.

Description

Polishing pad and using method
The cross reference of related application
The application requires the priority of the U.S. Patent application No 11/846,304 that submitted on August 28th, 2007, at this full content of quoting this U.S. Patent application as a reference.
Invention field
The application relates to chemical-mechanical planarization (CMP) field, more specifically, relates to the CMP pad that has reduced ratio of defects (defectivity).
Background
In modern integrated circuits (IC) is made, some material layers are imposed on the embedded structure that on semiconductor crystal wafer, forms.Chemical-mechanical planarization (CMP) is a kind ofly to be used to remove these layers and with the Ginding process of crystal column surface polishing.Can carry out CMP to oxide and metal, CMP is usually directed to the use of the chemical grout that applies together with polishing pad, and this polishing pad is with respect to wafer movement (for example, this polishing pad often rotatablely moves with respect to wafer).Level and smooth, the smooth surface that obtains is to keep the depth of focus of photoetching and guarantee in the outline step metal interconnected indeformable necessary in wafer-process step subsequently.Handle in Damascus needs to use CMP to remove metal such as tungsten or copper to limit interconnection structure from dielectric upper surface.
Polishing pad is formed by urea alkane usually, or it is for being filled with the casting mold of micropore unit, perhaps for being coated with the nonwoven batt of poly urea alkane.During use, pad is rotation on one side, with the wafer of also rotation contact on one side, thereby carry out polishing.Usually, use two kinds of polishing pads: hard polishing pad and soft polishing pad.Hard packing need use in the application of the planarization of micrometer-class on crystal column surface usually, and cushion uses in the application that does not need planarization.For example, cushion can use in the rapid polishing of multistep, in the rapid polishing of this multistep, at first with the hard packing wafer polishing so that having an even surface, subsequently with the cushion polishing to produce level and smooth finished product (finish).Hard packing usually produce as the blemish of little cut and for carry out serous granule to remove efficient not high.Therefore, use cushion to come wafer polishing surperficial so that little cut is level and smooth and make it possible to more effectively remove grain defect.
Summary of the invention
One embodiment of the present of invention provide a kind of polishing pad, and this polishing pad has one or more polishing unit of being made by the hydrogel material of the intrinsic water absorbing capacity of tool (for example, single polished surface or a plurality of polished surface or unit).Hydrogel material can not have microporosity and can have by weight for the water absorbing capacity of 4%-60%, greater than the wet hot strength of 1000psi, greater than the flexural modulus of 2000psi and sclerometer (Shore D) hardness that wets between 25-80.In other embodiments, hydrogel material can have: be the water absorbing capacity of 4%-60% by weight, be 1% to 20% microporosity by volume, the micropore of 20-100 micron, greater than the wet hot strength of 1000psi, greater than the flexural modulus of 2000psi and the wet Shore D hardness between 25-80.Under any situation, hydrogel material can being combined to form by a kind of in urea alkane, epoxyalkane, ester, ether, acrylic acid, acrylamide, amine, acid imide, vinyl alcohol, vinylacetate, acrylate, methacrylate, sulfone, urea alkane, vinyl chloride, ether ether ketone (etheretherketone) and/or the carbonate (ester) or they.
According to one embodiment of present invention, can between top layer, have under the situation of polishing composition, carry out polishing with part or all of the top layer (for example copper) that removes wafer by this polishing pad being brought near this wafer and this wafer and this polishing pad being rotated relative to one another by the polishing pad of the material manufacturing of the intrinsic water absorbing capacity of tool and semiconductor crystal wafer.Can before the beginning polishing operation, polishing pad be immersed in the solution (for example water, polishing composition, electrolytic solution such as copper sulphate etc.).Under the situation of using electrolytic solution, can during polishing operation, polishing pad be connected with power supply.
In some cases, when utilizing external device (ED) that cathode bias is provided, anode current imposed on polishing pad (or its polished surface), and semiconductor crystal wafer is pressed to polished surface.In other cases, when utilizing external device (ED) that anodic bias is provided, cathode current is imposed on polishing pad or surface, and semiconductor crystal wafer is pressed to polished surface.
Can use a kind of polishing pad of making in injection moulding, extruding, reaction injection molding(RIM) or the sintering with polished surface of making by the material of the intrinsic water absorbing capacity of tool.Can during making, this on the polished surface of polishing pad, form surface characteristics.
Brief Description Of Drawings
By the mode of example rather than the mode of restriction the present invention is described referring to accompanying drawing, in the accompanying drawings:
Figure 1A illustrates the conventional polishing pad of conventionally form, and according to embodiments of the invention, this routine polishing pad can comprise the polished surface of being made by the hydrogel material of the intrinsic water absorbing capacity of tool.
Figure 1B illustrates the polishing pad that has a plurality of polishings unit according to further embodiment of this invention, and one or more polishings unit is by the hydrogel material manufacturing of the intrinsic water absorbing capacity of tool.
Fig. 2 illustrates the method for use according to polishing pad of the present invention, and this polishing pad disposes the polished surface of being made by the hydrogel material of the intrinsic water absorbing capacity of tool.
Describe in detail
Have the polishing pad of the ratio of defects of reduction, the method for using this pad and the material that is used to make the CMP polishing pad of ratio of defects in this description with reduction.As mentioned above, CMP relates under the situation that polishing composition (for example slurries) exists, and removes film by polishing pad being pressed to wafer and making these elements rotate relative to one another from the surface of wafer.During polishing, between wafer and pad, form slurry layer, thereby form the hydrodynamic force boundary layer.The fluid layer of keeping homogeneous between pad and the wafer during polishing is very important.Under the situation that is minimized or eliminates fully in the boundary layer, pad can directly contact with wafer, causes causing the two-body interaction of higher ratio of defects.On the contrary, highly smooth interface will allow the polishing of homogeneous more, and ratio of defects is minimized.This is even more important under the situation of copper CMP, and at this moment polished film is very soft and can be scratched (scratch) by direct wafer-pad contact easily.
Conventional polishing pad is formed by polymer (normally urea alkane), has in the structure that is provided for the means of distribute slurry below wafer during the polishing.These structures comprise space or micropore, and as United States Patent (USP) 5,578,362 describedly comprise these spaces or micropore by adding hollow micro unit, or comprise these spaces or micropore by being introduced in the foam that forms during casting is handled.United States Patent (USP) 6,896,593 have described used supercritical CO during processed molding 2Form the hole.
In case formed bed course, just can further carry out machining to increase groove by machinery or laser arm device to its upper surface.For example, United States Patent (USP) 5,489,233 have described the solid plastic plate of the ability that does not have intrinsic absorption or transported slurry and have had the superficial makings of the flow channel of striding the wafer transported slurry and allowing polishing or the use of pattern.Mechanically on pad, produce superficial makings by machining.
During polishing, can use the dish of thin coated with CVD (chemical vapor deposition) diamond to come adjusting pad, to produce microtexture, so just produced little gutter channel with the distribution of further enhancing slurries below wafer.During polishing wafer was handled, the pad surface also experienced plastic deformation, and this has reduced grout distribution, causes relatively poor material to remove and remove homogeneity.Adjust to handle and removed the plastic deformation layer and recovered polishing performance.
In the routine pad, material self is without any the suitable water of intrinsic absorption or the ability of polishing solution, do not have initiatively to participate in the structure as micropore, groove and little groove that the outside of grout distribution produces.The grout distribution ability is not only very important for removing homogeneity, and also very important for ratio of defects.Under the relatively poor situation of grout distribution between pad and the wafer, direct pad-wafer contact may be caused in the relatively poor zone of the slurries below wafer, causes ratio of defects.
In one embodiment, the invention provides the polymeric polishing pad of ability, thereby the polished surface of extremely low ratio of defects is provided with intrinsic absorption water or polishing solution.Polishing pad of the present invention can be formed by the hydrogel material of the ability with the absorption water in the 5%-60% scope by weight or polishing solution.Water absorbing capacity is controlled between synthesis phase at material.Cushion material with intrinsic absorption water or polishing solution ability will provide smooth surface and the minimizing possibility that direct pad-wafer is contacted during polishing, and then eliminated ratio of defects or ratio of defects is minimized, especially eliminated the scratch defects rate or the scratch defects rate is minimized.Make the method such as the United States Patent (USP) 5,859,166,5,763,682,5,424,338,5,334,691,5,120,816,5,118,779 and 4,008 of hydrophilic urea alkane preparation, 189 is described, quotes each these United States Patent (USP) of a piece of writing as a reference at this.
The cushion material characteristic plays an important role to the ratio of defects that causes on the crystal column surface.Hard pad usually with higher ratio of defects, mainly be that the scratch defects rate is relevant, and softer pad is usually and relevant than hanging down ratio of defects.An importance of cushion is that pad surface local homogeneous is to prevent the ability of " hard contact " between wafer and pad surface.Another aspect of local surfaces homogeneity is to fill up-and the wafer interface keeps the ability at water-based interface.The water-based interface provides the necessary slickness between wafer and the pad, thereby but makes and to cause the energy minimization of cut or to eliminate it.The polymeric material that can absorb water provides highly stable polishing interface, thereby makes the minimizing possibility of ratio of defects.
United States Patent (USP) 5,763,682 have stated many conventional isocyanates class A foam A right and wrong hydrophilic (promptly hydrophobic relatively).Typical urea alkanes foam presents for the abhoing of aqueous fluids, and this causes this kind foam can not absorb or obtain the aqueous fluids of a great deal of.Therefore, can think that typical poly urea alkane foam is not enough to provide highly smooth polishing interface.
Because urea alkane is to form by isocyanates and polyol reaction, the hydrophilic aspect of final polymer chain can be controlled by the selection of polyalcohol.United States Patent (USP) 5,859,166,5,763,682,5,424,338,5,334,691,5,120,816,5,118,779 and 4,008,189 have described the hydrophilic method of improving urea alkane composition.Can make hydrophily poly urea alkane by ethylene oxide unit and epoxyalkane unit are added to the polyalcohol molecule.
Total hydroxy radical content of polyalcohol also is a key factor for the hydrophily of poly urea alkane.Be that in order to realize the water-wet behavior of satisfied form of foam, the polyhydroxy-alcohol of use-alkylene oxide adduct reactant must contain a certain proportion of oxirane in molecule known in the art.Referring to the United States Patent (USP) 3,457,203 that is incorporated herein by reference.Early stage hydrophilic poly urea alkane foam is by such adduct preparation, and these adducts are with the mixture of oxirane and senior epoxyalkane (as expoxy propane) and the product of polyhydroxy-alcohol condensation.Yet when moistening, these compositions show deterioration on mechanical performance.
United States Patent (USP) 4,008,189 have described by using the polyol blends of being made up of three kinds of alkoxylate PPG reactants can make the minimized composition of deterioration of this kind physical characteristic.These initial thing is characterized by trihydroxy alcohol nuclear, and the polyethylene oxide chain sections connects by one end and this nuclear phase, and the polyethylene oxide chain sections links to each other with the polyethylene oxide chain sections by the one end.Can prepare this polyalcohol by means commonly known in the art, under the situation that base catalyst such as KOH exist, the trihydroxylic alcohol starting material at first with oxirane then with expoxy propane condensation in order.
Wish that this kind composition will be particularly suited for polishing and use, because they allow highly smooth polishing interface.In addition, wish that crosslinking polymer network will provide optkmal characteristics, although can use the thermoplastic preparation.Tecophilic from Lubrizol company (Lubrizol Corp)
Figure GPA00001052900200051
Extrusion Molding preparation is one of this type of material.These materials processed (tailor) are to absorb 20% to 100% water by weight.Water sucting degree is associated with the mechanicalness loss of energy, and suction percentage by weight is high more, and the mechanical strength loss is big more.Therefore it is useful using the preparation that absorbs water by weight to about 5-20%, although can use the preparation that absorbs water by weight up to 100%.
Fig. 1 illustrates conventional polishing pad 100, as the viewgraph of cross-section of the IC1000 that provided by Rohm and Haas.Polishing pad 100 contains the micro unit 102 in the embedded polymer matrix 104, and it can be poly urea alkane.The pad surface contains the groove 106 that is useful on transported slurry during polishing.This commercially available polishing pad that gets can comprise that kinds of surface modifies the grout distribution of striding the pad surface with influence.
Figure 1B illustrates a kind of viewgraph of cross-section of polishing pad 108, this polishing pad is by SemiQuest, Inc. make and be described in U.S. Patent application 11/697,622 that submit, that transfer the assignee of the present invention on April 6th, 2007, quote this patent application as a reference at this.Pad 108 is made up of polishing unit 110, below this polishing unit 110 compressible below being positioned over guide plate 114 on the foam 112.The polishing unit that is formed by solid polymeric material provides polishing action, and grout distribution is subjected to polishing the influence of the open space between the unit.This open space is filled with open celled foam.
In the one embodiment of the invention, can use hydrophilic polymer materials to make one of pad discussed above or its both polished surface 104 and/or 110.For example, these polished surfaces can be formed by the hydrogel material that has by weight in the ability of the absorption water of 4%-60% scope or polishing solution.Hydrogel material can be a kind of in urea alkane, epoxyalkane, ester, ether, acrylic acid, acrylamide, amine, acid imide, vinyl alcohol, vinylacetate, acrylate, methacrylate, sulfone, urea alkane, vinyl chloride, ether ether ketone (etheretherketone) and/or the carbonate (ester) or their combination.Acid imide by with two hydroxy-acid groups or the functional group that dicarboxylic acids is formed of primary amine or ammonia keyed jointing, and acid imide is normally directly prepared by ammonia or primary amine and acid or its acid anhydrides.
In the specific embodiment of the invention, the polished surface of pad can be by such hydrogel material manufacturing, this hydrogel material do not have microporosity and have wet hot strength greater than 1000psi, greater than the flexural modulus of 2000psi and/or the wet Shore D hardness between 25-80.In other cases, this hydrogel material can have by volume micropore for the microporosity of about 1%-20%, about 20-100 micron, greater than the wet hot strength of 1000psi, greater than the flexural modulus of 2000psi and the wet Shore D hardness between 25-80.
During polishing operation, having under the situation of polishing compound, the polishing pad of being made by hydrogel material according to the present invention is contacted with the surface of semiconductor crystal wafer (wafer that one or more layers film, oxide and/or metal level are arranged for example) and both are rotated relative to one another, to remove part or all at the top layer of the surface of wafer substrate.Fig. 2 illustrates this set.Polishing pad 200 is fixed on the turntable 202 and the wafer 204 on the close platen 206.Between polishing pad and wafer, add slurries or other polishing compositions 208 and make this pad and/or this wafer rotates relative to one another.
In some cases, can before polishing pad is used to polishing operation, it be immersed in water or the polishing solution.For example, can before handling wafer, will fill up immersion a period of time (for example at least 10 minutes) to produce stable polished surface.
In addition, polishing pad constructed in accordance can be immersed electrolytic solution to produce conducting base and surface.An example of this kind electrolytic solution is a copper sulphate.Can during polishing operation, this pad be connected to external power source.This kind connection can be an anode, and can apply the male or female bias voltage by external device (ED).And polishing pad that by external device (ED) being provided cathode bias when be applied in anode current saturated by electrolytic solution (for example copper sulphate) by this way can be deposited the semiconductor crystal wafer of top conductive layer (for example copper) above pressing to, influence removing of this conductive layer so that be filled in down the structure that forms in the facial mask.Perhaps, constructed in accordance and can when being applied in anode current, be provided anodic bias by external device (ED) by the saturated polishing pad of electrolytic solution (for example copper sulphate).Deposit the semiconductor crystal wafer of top conductive layer (for example copper) above this pad can being pressed to, influence the deposition of this conductive layer to be filled in down the structure that forms in the facial mask.
Can use injection moulding, extruding, reaction injection molding(RIM) or sintering to make the polishing pad of making by hydrogel material according to the present invention.Can on this pad, form surface characteristics during the manufacturing process.This feature can help grout distribution during polishing operation.
Therefore, the method for polishing pad, manufacturing and this pad of use of the ratio of defects with reduction and the material that is used to make it have been described.Although describe with reference to the embodiment shown in some,, the present invention should not be limited to these embodiment, and should be limited by claims.

Claims (27)

1. polishing pad, comprise one or more polishings unit, described polishing unit is made by intrinsic water absorbing capacity of tool and the aquogel polymer that do not have a microporosity, and described hydrogel material has by weight for the water absorbing capacity of 4%-60%, greater than the wet hot strength of 1000psi, greater than the flexural modulus of 2000psi and the wet sclerometer hardness between 25-80.
2. the polishing pad of claim 1, wherein said hydrogel material is combined to form by a kind of in urea alkane, epoxyalkane, ester, ether, acrylic acid, acrylamide, amine, acid imide, vinyl alcohol, vinylacetate, acrylate, methacrylate, sulfone, urea alkane, vinyl chloride, ether ether ketone and/or the carbonic ester or they.
3. the method for a wafer polishing, be included between the top layer by the polishing pad of the material manufacturing of the intrinsic water absorbing capacity of tool and semiconductor crystal wafer and have under the situation of polishing composition, make described polishing pad near described wafer, and described wafer and described polishing pad are rotated relative to one another, with part or all of the described top layer that removes described wafer.
4. the method for claim 3 also is included in before the beginning polishing operation, and described polishing pad is immersed in the solution.
5. the method for claim 4, wherein said solution comprises water.
6. the method for claim 4, wherein said solution comprises polishing composition.
7. the method for claim 4, wherein said immersion continues at least 10 minutes.
8. the method for claim 4, wherein said solution is electrolytic solution.
9. the method for claim 8, wherein said electrolytic solution is a copper sulphate.
10. the method for claim 9 wherein during polishing operation, is connected polishing pad with power supply.
11. the method for claim 10 is an anode with being electrically connected of described pad wherein.
12. the method for claim 10 is a negative electrode with being electrically connected of described pad wherein.
13. polishing pad, comprise one or more polishings unit, described polishing unit is made by hydrogel material, described hydrogel material have water absorbing capacity that 4%-60% by weight is, by volume 1% to 20% microporosity that is, 20-100 micron micropore, greater than the wet hot strength of 1000psi, greater than the flexural modulus of 2000psi and the wet sclerometer hardness between 25-80.
14. the polishing pad of claim 13, wherein said hydrogel material is combined to form by a kind of in urea alkane, epoxyalkane, ester, ether, acrylic acid, acrylamide, amine, acid imide, vinyl alcohol, vinylacetate, acrylate, methacrylate, sulfone, urea alkane, vinyl chloride, ether ether ketone and/or the carbonic ester or they.
15. the method for a wafer polishing, be included between the top layer that has by the polishing pad of the polished surface of the material manufacturing of the intrinsic water absorbing capacity of tool and semiconductor crystal wafer and have under the situation of polishing composition, described polishing pad is immersed electrolytic solution, the described polished surface that makes described polishing pad is near described wafer, and described wafer and described polishing pad are rotated relative to one another, with part or all of the described top layer that removes described wafer.
16. the method for claim 15, wherein said electrolytic solution is a copper sulphate.
17. the method for claim 15 wherein during polishing operation, links to each other polished surface with power supply.
18. the method for claim 17 is an anode with being electrically connected of described polished surface wherein.
19. the method for claim 17 is a negative electrode with being electrically connected of described polished surface wherein.
20. the method for claim 15 also is included in when providing cathode bias by external device (ED) anode current is applied to polished surface, and described semiconductor crystal wafer is pressed to described polished surface.
21. the method for claim 20, wherein said electrolytic solution is a copper sulphate.
22. the method for claim 20, wherein said top layer is a copper.
23. the method for claim 15 also is included in when providing anodic bias by external device (ED) anode current is applied to polished surface, and described semiconductor crystal wafer is pressed to polished surface.
24. the method for claim 23, wherein said electrolytic solution is a copper sulphate.
25. the method for claim 23, wherein said top layer is a copper.
26. a method comprises a kind of polishing pad with polished surface of making that uses in injection moulding, extruding, reaction injection molding(RIM) or the sintering, described polished surface is by the material manufacturing with intrinsic water absorbing capacity.
27. the method for claim 26 also is included in during the described manufacturing, forms surface characteristics on the polished surface of polishing pad.
CN200880107121A 2007-08-28 2008-08-21 Polishing pad and method of use Pending CN101801601A (en)

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US11/846,304 US20090061744A1 (en) 2007-08-28 2007-08-28 Polishing pad and method of use
US11/846,304 2007-08-28
PCT/US2008/073904 WO2009032549A1 (en) 2007-08-28 2008-08-21 Polishing pad and method of use

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