CN101792312A - SrTiO3 ceramic dielectric material and preparation method of capacitor thereof - Google Patents
SrTiO3 ceramic dielectric material and preparation method of capacitor thereof Download PDFInfo
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- CN101792312A CN101792312A CN 201010120799 CN201010120799A CN101792312A CN 101792312 A CN101792312 A CN 101792312A CN 201010120799 CN201010120799 CN 201010120799 CN 201010120799 A CN201010120799 A CN 201010120799A CN 101792312 A CN101792312 A CN 101792312A
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Abstract
The invention relates to a SrTiO3 ceramic dielectric material and a preparation method of a capacitor thereof. The ceramic dielectric material comprises MnCO3, SrTiO3 and (Bi1/2Na1/2) TiO3. The process of preparing the capacitor by using the ceramic dielectric material comprises the steps of: synthesizing (Bi1/2Na1/2) TiO3 by Bi2O3, Na2CO3 and TiO2; preparing a pre-synthetic material SrTiO3 by SrCO3 and TiO2; preparing a dry abrasive by (Bi1/2Na1/2) TiO3, SrTiO3 and MnCO3; adding a polyvinyl alcohol solution to the dry abrasive; granulating, screening, pressing, sintering and preparing a silver electrode to obtain the capacitor. The invention enhances a dielectric constant of SrTiO3 ceramics by regulating the proportion of (Bi1/2Na1/2) TiO3 to SrTiO3, and enables the ceramic material to have fine grain structure by doping MnCO3. The prepared capacitor keeps a high dielectric constant and has low dielectric loss and higher breakdown field strength.
Description
Technical field
The present invention relates to a kind of SrTiO
3The preparation method of ceramic dielectric material and electrical condenser thereof belongs to the dielectric ceramics technology.
Background technology
For a long time, the research of centering high voltage ceramic capacitor is very active both at home and abroad.These researchs mainly concentrate on by changing material prescription and reach material modification and realize unleaded purpose.In the prior art, the research that has additive to SrTiO
3Be the rule that influences of high-pressure medium porcelain dielectric properties, find MnO
2Adding can reduce dielectric loss, the Dy of ceramic dielectric
2O
3Adding can improve the specific inductivity of medium, CaTiO
3, MgTiO
3, NiO adding can reduce the rate of temperature change of this material dielectric constant, but its Curie temperature is still below 40 ℃, its room temperature dielectric constant lower [Hao person of outstanding talent .[J]. Hebei College of Science and Engineering's journal, 2001,23, (1): 53-58]]; The research that has doped with rare-earth elements La
2O
3Y
2O
3, CeO
2Deng to SrTiO
3ε and the temperature of tg δ and the influence of frequency response characteristic of base pottery find that these rare earth elements make SrTiO
3The dielectric loss of base pottery reduces, but the rate of temperature change of the specific inductivity of material [Xiao Hong ground, Wang Chengjian, Ma Honglei .[J] bigger than normal. functional materials, 2003,1, (34): 78-82]; The research that has doping Bi
2O
3NTiO
2, Pb
2+, Mn
2+And Zn
2+To SrTiO
3The modifying function of base high voltage capacitor pottery is found Bi
2O
3NTiO
2And Pb
3O
4Add-on in certain scope, can improve the specific inductivity of porcelain, improve its sintering character simultaneously, add an amount of MnCO
3Can improve the sintering character of porcelain and the rate of temperature change of specific inductivity, unleaded but result of study does not realize, and the specific inductivity under its room temperature less than normal (Zhang Qingqiu, Li Yao continuous heavy rain .[J]. South China Science ﹠ Engineering University's journal, 2000,28, (1): 69-69).
Summary of the invention
The purpose of this invention is to provide a kind of SrTiO
3The preparation method of ceramic dielectric material and electrical condenser thereof, the high and low loss of this ceramic dielectric material specific inductivity, unleaded; Simple with its preparation electrical condenser process, the capacitor performance that makes is good.
The present invention is realized by following technical proposals, a kind of SrTiO
3Ceramic dielectric material is characterized in that, this ceramic medium material is made up of following component and content thereof,
SrTiO
3:(30~90.0)mol%;
(Bi
1/2Na
1/3)TiO
3:(10.0~70.0)mol%;
And SrTiO
3(Bi
1/2Na
1/2) TiO
3The molar content sum be 100%,
MnCO
3: mass content is SrTiO
3(Bi
1/2Na
1/2) TiO
3(0.1~1.3) of quality sum doubly.
With above-mentioned SrTiO
3Ceramic dielectric material prepares the method for electrical condenser, it is characterized in that comprising following process:
1) with Bi
2O
3With Na
2CO
3And TiO
2According to mol ratio is to prepare burden at 1: 1: 4, is to mix at 1: 1: 2 to carry out wet ball grinding 4~24 hours with this batching and abrading-ball and deionized water by mass ratio, slip behind the mix grinding places baking oven in 110~140 ℃ of oven dry of temperature, oven dry material 760~820 ℃ of temperature down insulation carried out synthetic in advance pre-synthetic material (Bi in 2 hours
1/2Na
1/2) TiO
3
2) with SrCO
3With TiO
2Be to prepare burden at 1: 1 in molar ratio, is to mix at 1: 1: 2 to carry out wet ball grinding 4~24 hours with this batching and abrading-ball and deionized water by mass ratio, slip behind the mix grinding places baking oven in 110~140 ℃ of oven dry of temperature, dry and expect that being incubated 2 hours down for 1050~1180 ℃ through temperature carries out synthesizing in advance, gets pre-synthetic material SrTiO
3
3) the pre-synthetic material (Bi that step 1) is made
1/2Na
1/2) TiO
3With step 2) the pre-synthetic material SrTiO that makes
3And MnCO
3Be 1 in molar ratio: (0.1~0.7): prepare burden (0.01~0.13), be to mix at 1: 1: 1.5 to carry out ball milling 4~24 hours by this batching and abrading-ball and deionized water by mass ratio again, then the ball milling material is placed baking oven at 110~140 ℃ of oven dry of temperature, the material of must dry grinding;
4) by 5~8% of dry grinding material quality, the adding mass concentration is 5% polyvinyl alcohol aqueous adhesive in the dry bulb abrasive material, carry out granulation after mixing, the granulation material is by 40 mesh sieve branches, get particulate material and on shaper, suppress type in blocks with pressure 100~500MPa, matrix band is placed on the aluminum oxide backing plate that the titanium dioxide zirconium powder is bedding and padding, separate with the titanium dioxide zirconium powder between two matrix bands, put into high temperature box type resistance furnace then and be incubated 20 minutes for 200~350 ℃ in 120~150 ℃ of temperature and temperature respectively, control heat-up rate again at 300~400 ℃/h, be warming up to 1230~1270 ℃ of following sintering 1~4h, furnace cooling is to room temperature then, after the zirconium dioxide bedding and padding removing of burning till on the ceramics of back, with the ceramics preheating, the even silver coating electrode slurry in two sides is incubated burning infiltration in 10 minutes down 530 ℃ of temperature then and makes silver electrode, obtains lead-free ceramic capacitance device of the present invention.
Advantage of the present invention is: by regulating (Bi
1/2Na
1/2) TiO and SrTiO
3Ratio make SrTiO
3The specific inductivity of system's pottery is significantly improved; By doped with Mn CO
3, make stupalith have fine crystalline structure, when keeping high-k, still have very low dielectric loss and higher disruptive field intensity; Raw material and working condition that the present invention adopts realize easily, material repeated fine.
Embodiment
Embodiment 1:
1: 1: 4 in molar ratio difference weighing Bi
2O
3, Na
2CO
3, TiO
21: 1 in molar ratio difference weighing TiO
2, SrCO
3: above-mentioned batching is respectively charged into planetary ball mill carries out ball milling 4h (material: ball: water=1: 1: 2).The ball milling material is after 120 ℃ of dryings, respectively at 780 ℃ of temperature and 1100 ℃ of synthetic (Bi of temperature
1/2Na
1/2) TiO
3And SrTiO
3Then according to 45mol% (Na
0.5Bi
0.5) TiO
3+ 55mol%SrTiO
3+ 0.2wt%MnCO
3Prepare burden.
Take by weighing pre-synthetic material 45mol (Na respectively
0.5Bi
0.5) TiO
3SrTiO with 55mol
3, allocate 0.1000g MnCO again into
3Mix by this batching 50g, abrading-ball 50g and deionized water 100g then and carried out wet ball grinding 6 hours.The ball milling material is after 120 ℃ of dryings of temperature, 7% adding mass concentration by oven dry material quality is that 5% polyvinyl alcohol water solution 3.5ml mixes, cross 40 mesh sieve granulations, under pressure 350MPa pressure, the granulation material is pressed into Φ 10mm * 2mm disk then, sample after the moulding is placed on aluminum oxide or the zirconium dioxide backing plate, between sheet and the sheet zirconium dioxide bedding and padding need be arranged, put into high temperature box type resistance furnace and respectively be incubated 20 minutes for 200 ℃ in 120 ℃ of temperature and temperature, again per hour to heat up 300-400 ℃, 2h burns till under 1250 ℃ of temperature, and the ceramics after burning till is through 530 ℃ of burning infiltration silver electrodes.The ε of sample is 3125, tan δ is 34 * 10
-4, T
CIt is 8 ℃.
Claims (2)
1. SrTiO
3Ceramic dielectric material is characterized in that, this ceramic dielectric material is made up of following component and content thereof,
SrTiO
3:(30~90.0)mol%;
(Bi
1/2Na
1/2)TiO
3:(10.0~70.0)mol%;
And SrTiO
3(Bi
1/2Na
1/2) TiO
3The molar content sum be 100%,
MnCO
3: mass content is SrTiO
3(Bi
1/2Na
1/2) TiO
3(0.1~1.3) of quality sum doubly.
2. one kind with the described SrTiO of claim 1
3Ceramic dielectric material prepares the method for electrical condenser, it is characterized in that comprising following process:
1) with Bi
2O
3With Na
2CO
3And TiO
2According to mol ratio is to prepare burden at 1: 1: 4, is to mix at 1: 1: 2 to carry out wet ball grinding 4~24 hours with this batching and abrading-ball and deionized water by mass ratio, slip behind the mix grinding places baking oven in 110~140 ℃ of oven dry of temperature, oven dry material 760~820 ℃ of temperature down insulation carried out synthetic in advance pre-synthetic material (Bi in 2 hours
1/2Na
1/2) TiO
3
2) with SrCO
3With TiO
2Be to prepare burden at 1: 1 in molar ratio, is to mix at 1: 1: 2 to carry out wet ball grinding 4~24 hours with this batching and abrading-ball and deionized water by mass ratio, slip behind the mix grinding places baking oven in 110~140 ℃ of oven dry of temperature, dry and expect that being incubated 2 hours down for 1050~1180 ℃ through temperature carries out synthesizing in advance, gets pre-synthetic material SrTiO
3
3) the pre-synthetic material (Bi that step 1) is made
1/2Na
1/2) TiO
3With step 2) the pre-synthetic material SrTiO that makes
3And MnCO
3Be 1 in molar ratio: (0.1~0.7): prepare burden (0.01~0.13), be to mix at 1: 1: 1.5 to carry out ball milling 4~24 hours by this batching and abrading-ball and deionized water by mass ratio again, then the ball milling material is placed baking oven at 110~140 ℃ of oven dry of temperature, the material of must dry grinding;
4) by 5~8% of dry grinding material quality, the adding mass concentration is 5% polyvinyl alcohol aqueous adhesive in the dry bulb abrasive material, carry out granulation after mixing, the granulation material is by 40 mesh sieve branches, get particulate material and on shaper, suppress type in blocks with pressure 100~500MPa, matrix band is placed on the aluminum oxide backing plate that the titanium dioxide zirconium powder is bedding and padding, separate with the titanium dioxide zirconium powder between two matrix bands, put into high temperature box type resistance furnace then and be incubated 20 minutes for 200~350 ℃ in 120~150 ℃ of temperature and temperature respectively, control heat-up rate again at 300~400 ℃/h, be warming up to 1230~1270 ℃ of following sintering 1~4h, furnace cooling is to room temperature then, after the zirconium dioxide bedding and padding removing of burning till on the ceramics of back, with the ceramics preheating, the even silver coating electrode slurry in two sides is incubated burning infiltration in 10 minutes down 530 ℃ of temperature then and makes silver electrode, obtains lead-free ceramic capacitance device of the present invention.
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CN 201010120799 CN101792312A (en) | 2010-03-10 | 2010-03-10 | SrTiO3 ceramic dielectric material and preparation method of capacitor thereof |
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CN 201010120799 CN101792312A (en) | 2010-03-10 | 2010-03-10 | SrTiO3 ceramic dielectric material and preparation method of capacitor thereof |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102323304A (en) * | 2011-06-15 | 2012-01-18 | 天津大学 | Ceramic dielectric sensor and preparation method thereof used for detecting relative volume concentration of methanol gasoline |
CN104446452A (en) * | 2014-12-12 | 2015-03-25 | 湖北大学 | Lead-free medium-temperature stable dielectric electronic ceramic material and preparation method thereof |
CN110511019A (en) * | 2019-10-08 | 2019-11-29 | 哈尔滨商业大学 | A kind of BNT base Lead-free ferroelectric ceramics and preparation method thereof that response lag is effectively reduced |
CN113135753A (en) * | 2021-03-09 | 2021-07-20 | 杭州电子科技大学 | Lead-free relaxation ceramic material with low electric field driving and high-efficiency energy storage characteristics and preparation method thereof |
CN113248251A (en) * | 2021-05-31 | 2021-08-13 | 福建火炬电子科技股份有限公司 | Ceramic pulse capacitor, dielectric material and preparation method thereof |
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CN1395549A (en) * | 2000-11-21 | 2003-02-05 | Tdk株式会社 | Piezoelectric ceramic |
US20040136891A1 (en) * | 2000-10-17 | 2004-07-15 | Takeshi Kijima | Oxide material, method for preparing oxide thin film and element using said material |
EP1591567A1 (en) * | 2003-01-21 | 2005-11-02 | TDK Corporation | Composition for thin film capacitance element, insulating film of high dielectric constant, thin film capacitance element, thin film laminated capacitor and method for manufacturing thin film capacitance element |
CN1761776A (en) * | 2003-01-21 | 2006-04-19 | Tdk株式会社 | Composition for thin film capacitance element, insulating film of high dielectric constant, thin film capacitance element, thin film laminated capacitor and method for manufacturing thin film capacita |
CN1793031A (en) * | 2005-12-28 | 2006-06-28 | 天津大学 | SrTiO3 ceramic electrical medium material and preparation process thereof |
CN101386534A (en) * | 2008-10-24 | 2009-03-18 | 江苏大学 | High performance middle and low temperature sintered high-voltage ceramic capacitor medium |
-
2010
- 2010-03-10 CN CN 201010120799 patent/CN101792312A/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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US20040136891A1 (en) * | 2000-10-17 | 2004-07-15 | Takeshi Kijima | Oxide material, method for preparing oxide thin film and element using said material |
CN1395549A (en) * | 2000-11-21 | 2003-02-05 | Tdk株式会社 | Piezoelectric ceramic |
EP1591567A1 (en) * | 2003-01-21 | 2005-11-02 | TDK Corporation | Composition for thin film capacitance element, insulating film of high dielectric constant, thin film capacitance element, thin film laminated capacitor and method for manufacturing thin film capacitance element |
CN1761776A (en) * | 2003-01-21 | 2006-04-19 | Tdk株式会社 | Composition for thin film capacitance element, insulating film of high dielectric constant, thin film capacitance element, thin film laminated capacitor and method for manufacturing thin film capacita |
CN1793031A (en) * | 2005-12-28 | 2006-06-28 | 天津大学 | SrTiO3 ceramic electrical medium material and preparation process thereof |
CN101386534A (en) * | 2008-10-24 | 2009-03-18 | 江苏大学 | High performance middle and low temperature sintered high-voltage ceramic capacitor medium |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102323304A (en) * | 2011-06-15 | 2012-01-18 | 天津大学 | Ceramic dielectric sensor and preparation method thereof used for detecting relative volume concentration of methanol gasoline |
CN104446452A (en) * | 2014-12-12 | 2015-03-25 | 湖北大学 | Lead-free medium-temperature stable dielectric electronic ceramic material and preparation method thereof |
CN110511019A (en) * | 2019-10-08 | 2019-11-29 | 哈尔滨商业大学 | A kind of BNT base Lead-free ferroelectric ceramics and preparation method thereof that response lag is effectively reduced |
CN113135753A (en) * | 2021-03-09 | 2021-07-20 | 杭州电子科技大学 | Lead-free relaxation ceramic material with low electric field driving and high-efficiency energy storage characteristics and preparation method thereof |
CN113248251A (en) * | 2021-05-31 | 2021-08-13 | 福建火炬电子科技股份有限公司 | Ceramic pulse capacitor, dielectric material and preparation method thereof |
CN113248251B (en) * | 2021-05-31 | 2022-06-10 | 福建火炬电子科技股份有限公司 | Ceramic pulse capacitor, dielectric material and preparation method thereof |
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Application publication date: 20100804 |