CN101789767A - The harmonic suppression type stub matching network that is used for dual-frequency amplifier - Google Patents
The harmonic suppression type stub matching network that is used for dual-frequency amplifier Download PDFInfo
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- CN101789767A CN101789767A CN201010100775A CN201010100775A CN101789767A CN 101789767 A CN101789767 A CN 101789767A CN 201010100775 A CN201010100775 A CN 201010100775A CN 201010100775 A CN201010100775 A CN 201010100775A CN 101789767 A CN101789767 A CN 101789767A
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- matching network
- dual
- frequency amplifier
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- harmonic suppression
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Abstract
Two-band radio frequency amplifier micro strip matching network is used for wireless communication technology dual-frequency amplifier field, includes microstrip transmission line TL
1, microstrip transmission line TL
2, open circuit minor matters OS.The purpose of this invention is to provide a kind of radio frequency amplifier matching network that is applicable to radio communication, make amplifier on any two frequency ranges, to work simultaneously, and pass through the linear properties of the harmonic wave suppression characteristic boost amplifier of matching network.Its main feature is: adopt transmission line and open circuit minor matters to realize that simple in structure, physical dimension is little; Adopt open circuit minor matters structure, can realize harmonic restraining function; The employing microstrip line is realized, is suitable for high-power applications.
Description
Technical field
The present invention relates to be used for the radio frequency amplifier matching Design of wireless communication technology field.
Background technology
In the transceiver architecture of radio communication, radio frequency amplifier is wherein indispensable important component part.Especially for cell mobile communication systems, power amplifier is in occupation of the cost of mobile communication base station and the significant proportion of power consumption.Because most wireless communication systems are usually operated on two or more operating frequencies, need the many covers of design circuit to finish transmitting and receiving of radiofrequency signal usually.For effectively reducing the size of transceiver, reduce the cost and the power consumption of radio-frequency front-end equipment, some double frequency microwave devices are devised.These devices can be worked the purpose that can reach reduced volume, reduces cost simultaneously in two frequency ranges.
In the middle of the present double frequency device research, passive device is in the majority, as power splitter, coupler etc.The design basis of double frequency passive device is the double frequency matching theory.Yet the impedance conversion that the coupling of passive device only needs to finish between the fixing real number impedance gets final product.For most of active devices, load impedance to be matched is a complex impedance.In addition, at different frequency places, its load impedance may be different.Therefore, to can be used for the matching structure with the double frequency of the plural load impedance of frequency change be the basis of realizing the dual frequency active device in design.
By existing patent and paper search are found that current a lot of double frequency matching techniques exist certain deficiency aspect Amplifier Design.A kind of implementation method of dual-frequency amplifier is to adopt transmission branch road conversion equipment to switch between the different coalignment of two covers.Coupling and work when this method can not realize two frequencies, and still form by two cover matching networks, transistorized size and cost only saved.Secondly, some occur and adopted the method for multiple discrete component double frequency coupling.The complex structure of discrete component matching network, power capacity is little, and it is low to be suitable for frequency range, is not suitable for the design and the realization of high frequency and high power amplifier.In addition, matching network structure also occurred, had three sections transmission lines and two sections short circuit minor matters based on microstrip line, complex structure, size is bigger.
Summary of the invention
The purpose of this invention is to provide a kind of radio frequency amplifier matching network that is applicable to radio communication, make amplifier on two frequency ranges, to work simultaneously.Match circuit has the harmonic wave suppression characteristic, can suppress the harmonic wave output of two frequencies.
The present invention is achieved through the following technical solutions: a kind of micro strip matching network includes microstrip transmission line TL
1, microstrip transmission line TL
2, open circuit minor matters OS.
Described microstrip transmission line TL
1, its function is to be converted to two mutually conjugate input impedance at two different load impedances in frequency place.That is: set Z
L2For from TL
2To TL
1The input impedance of seeing, then TL
1Design satisfy Z
L2|
F1=(Z
L2|
F2)
*
Described microstrip transmission line TL
2, its function is with at two mutually conjugate input impedance Z in frequency place
L2Be converted to the inverse (1/Z that input conductance equals system impedance
0), and import susceptance opposite number relation each other.That is: set Y
L1For from OS to T
L2The input conductance of seeing, B
L1For from OS to TL
2The input susceptance of seeing, then TL
2Design satisfy Y
L1|
F1=Y
L1|
F2=1/Z
0, and B
L1|
F1=-B
L1|
F2, Z wherein
0Being system impedance, is 50 Ω in radio system.
Described open circuit minor matters OS is the microstrip stubs of terminal open circuit, and its function is to eliminate from OS to TL
2The input susceptance B that sees
L1That is: the susceptance of setting minor matters is B
3, two different frequency f
1And f
2On, B is satisfied in the design of OS
3|
F1=-B
L1|
F1=-B
3|
F2=B
L1|
F2
The present invention is a kind of novel structure, simple, practical two-band radio frequency amplifier matching network, coupling when pair amplifier transistor input/output port can be provided on two frequency ranges.Its main feature is: adopt transmission line and open circuit minor matters to realize that simple in structure, physical dimension is little; Adopt open circuit minor matters structure, can realize harmonic restraining function; The employing microstrip line is realized, is suitable for high-power applications.
Description of drawings
Fig. 1 is the principle schematic that the present invention is used for the harmonic suppression type stub matching network of dual-frequency amplifier
Fig. 2 is the circuit diagram that harmonic suppression type stub matching network that the present invention is used for dual-frequency amplifier is applied to 3.45GHz/5.8GHz dual-frequency amplifier embodiment
Fig. 3 is the frequency characteristic figure that harmonic suppression type stub matching network that the present invention is used for dual-frequency amplifier is applied to 3.45GHz/5.8GHz dual-frequency amplifier embodiment
Embodiment
Below in conjunction with accompanying drawing embodiments of the invention are elaborated: present embodiment provided detailed execution mode and specific operation process, but protection scope of the present invention is not limited to following embodiment being to implement under the prerequisite with the invention technical scheme.
As shown in Figure 2, present embodiment is for being operated in the amplifier of 3.45GHz and 5.8GHz simultaneously.This amplifier is that maximum gain transmits amplifier.In the 3.45GHz frequency, input load reflection coefficient to be matched is 0.134 ∠-154.0 °, and the output loading reflection coefficient is 28.3 ° of 0.247 ∠.In the 5.8GHz frequency, input load reflection coefficient to be matched is 0.255 ∠-81.6 °, and the output loading reflection coefficient is 0.325 ∠-5.9 °.The input and output match circuit of this amplifier designs according to the present invention, comprising: medium substrate, input port, output port, transistor, biasing and stabilizing circuit, the microstrip line TL of input matching circuit
I1, TL
I2And OS
i, the microstrip line TL of output matching circuit
O1, TL
O2And OS
o
Described medium substrate relative dielectric constant is 3.48, and thickness is 20mil.
Described input port, output port are the two ends port of amplifier, adopt the sub-miniature A connector of standard, and characteristic impedance is 50 Ω.
Described transistor is bipolar transistor BFU725F.
Described biasing and stabilizing circuit be by some electric capacity, inductance, and resistance is formed, and being responsible for transistor provides direct current biasing and suppresses vibration.This method for designing is well known in the art.
Described input matching circuit microstrip line TL
I1Characteristic impedance is 69 Ω, and electrical length is 54 degree.By method for designing design of the present invention.
Described input matching circuit microstrip line TL
I2Characteristic impedance is 41 Ω, and electrical length is 67 degree.By method for designing design of the present invention.
Described input matching circuit microstrip line OS
iCharacteristic impedance is 45 Ω, and electrical length is 134 degree.By method for designing design of the present invention.
Described input matching circuit microstrip line TL
O1Characteristic impedance is 77 Ω, and electrical length is 54 degree.By method for designing design of the present invention.
Described input matching circuit microstrip line TL
O2Characteristic impedance is 52 Ω, and electrical length is 67 degree.By method for designing design of the present invention.
Described input matching circuit microstrip line OS
oCharacteristic impedance is 291 Ω, and electrical length is 134 degree.By method for designing design of the present invention.Therefore this minor matters characteristic impedance is big, influences lessly, can ignore when realizing.
Claims (7)
1. be used for the harmonic suppression type stub matching network of dual-frequency amplifier, comprise: a kind of micro strip matching network includes microstrip transmission line TL
1, microstrip transmission line TL
2, open circuit minor matters OS.It is characterized in that: described micro strip matching network can be operated in two different frequency f
1, f
2
2. the harmonic suppression type stub matching network that is used for dual-frequency amplifier as claimed in claim 1 is characterized in that: two frequencies that this micro strip matching network is worked can freely define, i.e. f
1, f
2Be arbitrary value.
3. the harmonic suppression type stub matching network that is used for dual-frequency amplifier as claimed in claim 1 is characterized in that: this matching network has the harmonic wave suppression characteristic.
4. the harmonic suppression type stub matching network that is used for dual-frequency amplifier as claimed in claim 1 is characterized in that: described TL
1, load impedance is converted to two mutually conjugate input impedance.That is: set Z
L2For from TL
2To TL
1The input impedance of seeing, then TL
1Design satisfy Z
L2|
F1=(Z
L2|
F2)
*
5. the harmonic suppression type stub matching network that is used for dual-frequency amplifier as claimed in claim 1 is characterized in that: described TL
2, will be at two mutually conjugate input impedance Z in frequency place
L2Be converted to the inverse (1/Z that input conductance equals system impedance
0), and the input susceptance at two frequency places opposite number each other.That is: set T
L1For from OS to TL
2The input conductance of seeing, B
L1For from OS to TL
2The input susceptance of seeing, then TL
2Design satisfy Y
L1|
F1=Y
L1|
F2=1/Z
0, and B
L1|
F1=-B
L1|
F2
6. the harmonic suppression type stub matching network that is used for dual-frequency amplifier as claimed in claim 1 is characterized in that: described OS is the microstrip stubs of terminal open circuit, eliminates from OS to TL
2The input susceptance B that sees
L1That is: the susceptance of setting minor matters is B
3, two different frequency f
1And f
2On, B is satisfied in the design of OS
3|
F1=-B
L1|
F1=-B
3|
F2=B
L1|
F2
7. the harmonic suppression type stub matching network that is used for dual-frequency amplifier as claimed in claim 1, it is characterized in that: the transmission line in this matching network can be converted into actual strip line, the size of various actual transmissions line structures such as co-planar waveguide in conjunction with method for designing and the different radio frequency substrate parameter that this patent proposes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010100775A CN101789767A (en) | 2010-01-25 | 2010-01-25 | The harmonic suppression type stub matching network that is used for dual-frequency amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010100775A CN101789767A (en) | 2010-01-25 | 2010-01-25 | The harmonic suppression type stub matching network that is used for dual-frequency amplifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101789767A true CN101789767A (en) | 2010-07-28 |
Family
ID=42532850
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010100775A Pending CN101789767A (en) | 2010-01-25 | 2010-01-25 | The harmonic suppression type stub matching network that is used for dual-frequency amplifier |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102624349A (en) * | 2012-03-15 | 2012-08-01 | 北京航空航天大学 | Harmonic noise and white-noise interference eliminating method with low distortion to initial data |
| CN102714501A (en) * | 2012-02-17 | 2012-10-03 | 华为技术有限公司 | Frequency multiplier and method of generating frequency-multiplied signal |
| CN104715911A (en) * | 2015-04-03 | 2015-06-17 | 徐园园 | Micro-strip impedance transformer |
| WO2018076440A1 (en) * | 2016-10-31 | 2018-05-03 | 宇龙计算机通信科技(深圳)有限公司 | Impedance matching circuit, antenna and terminal |
| WO2019015275A1 (en) * | 2017-07-21 | 2019-01-24 | 深圳市景程信息科技有限公司 | Two-wire inverse class f power amplifier |
| CN109274342A (en) * | 2018-08-31 | 2019-01-25 | 东南大学 | Power synthesis amplifier suitable for millimeter-wave communication system power application |
| CN110350874A (en) * | 2019-07-09 | 2019-10-18 | 电子科技大学 | A kind of micro-strip power amplifier with harmonic inhibition capability |
-
2010
- 2010-01-25 CN CN201010100775A patent/CN101789767A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102714501A (en) * | 2012-02-17 | 2012-10-03 | 华为技术有限公司 | Frequency multiplier and method of generating frequency-multiplied signal |
| CN102714501B (en) * | 2012-02-17 | 2014-06-25 | 华为技术有限公司 | Frequency multiplier and method of generating frequency-multiplied signal |
| US9172297B2 (en) | 2012-02-17 | 2015-10-27 | Huawei Technologies Co., Ltd. | Frequency multiplier and method for generating frequency multiplied signals |
| CN102624349A (en) * | 2012-03-15 | 2012-08-01 | 北京航空航天大学 | Harmonic noise and white-noise interference eliminating method with low distortion to initial data |
| CN102624349B (en) * | 2012-03-15 | 2014-09-17 | 北京航空航天大学 | Harmonic noise and white-noise interference eliminating method with low distortion to initial data |
| CN104715911A (en) * | 2015-04-03 | 2015-06-17 | 徐园园 | Micro-strip impedance transformer |
| WO2018076440A1 (en) * | 2016-10-31 | 2018-05-03 | 宇龙计算机通信科技(深圳)有限公司 | Impedance matching circuit, antenna and terminal |
| WO2019015275A1 (en) * | 2017-07-21 | 2019-01-24 | 深圳市景程信息科技有限公司 | Two-wire inverse class f power amplifier |
| CN109274342A (en) * | 2018-08-31 | 2019-01-25 | 东南大学 | Power synthesis amplifier suitable for millimeter-wave communication system power application |
| CN110350874A (en) * | 2019-07-09 | 2019-10-18 | 电子科技大学 | A kind of micro-strip power amplifier with harmonic inhibition capability |
| CN110350874B (en) * | 2019-07-09 | 2023-03-21 | 电子科技大学 | Microstrip power amplifier with harmonic suppression capability |
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Application publication date: 20100728 |