CN101787518A - Multi-ion-beam sputter-deposition technology for doping with diamond-like carbon (DLC) coating - Google Patents
Multi-ion-beam sputter-deposition technology for doping with diamond-like carbon (DLC) coating Download PDFInfo
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Abstract
The invention relates to a multi-ion-beam sputter-deposition technology for doping a diamond-like carbon (DLC) coating. The technology is characterized by comprising the following steps of: firstly, washing to removing a polluted layer on the surface of a workpiece by utilizing ultrasonic waves, and carrying out ion beam bombardment washing on the surface of the workpiece by utilizing an argon-ion beam generated by an ion source to obtain an atomic scale clean surface; then preparing a gradient transition layer by utilizing an auxiliary ion beam sputter-deposition method; and finally, synthesizing a multi-element doped DLC coating on the gradient transition layer by utilizing multi-ion-beam sputtering and low-energy ion beam auxiliary deposition. In the process of synthesizing the multi-element doped DLC coating by utilizing the multi-ion-beam sputtering and the low-energy ion beam auxiliary deposition, carbon particles and metallic particles which are generated by bombarding a graphite target and a metallic target are deposited by using a sputtering ion source, and gas ions generated by an auxiliary deposition ion source continuously bombard the surface of a grown film layer to regulate and control the microstructure of the film layer and realize multi-element doping.
Description
Affiliated technical field:
Patent of the present invention relates to the multiple ion-beam sputter-deposition technology of a kind of preparation doped diamond (DLC) coating, belongs to the compound technology of preparing of high-performance DLC coated material.
Background technology:
Diamond-like coating has friction and wear behavior, chemical stability and the biocompatibility of high rigidity, high elastic coefficient, excellence, has very application prospects.Limited the application of DLC coating under harsh service condition but internal stress is big, film/basic bonding force is poor, poor heat stability, fragility are big etc.
Adopt transition layer can overcome film/base structure, problem that performance difference is big at the interface, alleviate the internal stress of DLC film and the film/basic bonding force of raising DLC coating.By the elements such as W, Ti, Cr, Zr, Cu, Si, F that mix in the DLC coating, forming with the amorphous carbon-film is the polynary multiphase structure of matrix, can significantly improve the over-all properties of DLC film; But also there are some problems in the doping single-element, can increase the frictional coefficient of DLC coating as Doped Tungsten, and Doped with Titanium causes DLC coating fragility to increase, and doped F causes the thermostability variation of DLC coating; In order further to improve the performance of DLC coating, need realize the mutual supplement with each other's advantages of different doped elements by the multiple element doping of DLC coating, but also not develop the DLC coating multi-element doping technology that is fit to industrialized mass production at present.
The processing parameter of multiple ion-beam sputter-deposition technology can strict be controlled, and the DLC film dynamic performance excellence of preparation is a kind of Perfected process of synthesized high-performance DLC coating, but does not also utilize the bibliographical information of the synthetic multi-element doping DLC coating of this method at present.
The multi-element doping DLC coating of development of new and the multiple ion-beam sputter-deposition technology of transition layer thereof, it is significant to the application of DLC coating under harsh service condition to prepare the high-performance multi-element doping DLC coating with transition layer of optimizing Gradient distribution.
Summary of the invention:
In order to overcome the deficiency that present DLC coat preparing technology and doped scheme exist, patent of the present invention has proposed a kind of novel DLC coating multiple ion-beam sputter-deposition technology, it is characterized in that: described method is cleaned ion beam sputter depositing, ion beam assisted depositing, ion beam etching and is combined, preparation multi-element doping DLC coating, this method may further comprise the steps successively:
(1) at first utilize ultrasonic cleaning technology to remove the workpiece surface pollution layer;
(2) ar-ion beam that utilizes ion source to produce carries out the ion beam etching cleaning to workpiece surface, obtains the clean surface of atom level;
(3) utilize the ion beam assisted depositing method to prepare gradient transitional lay;
(4) utilize multiple ion-beam sputter+low energy ion beam assistant depositing method to prepare multi-element doping DLC film.
In above-mentioned preparation method, the ion source of step (2) can adopt any ion source in Kaufman ion source, radio-frequency induction coupling ion source, the electron cyclotron resonace ion source.
In above-mentioned preparation method, step (2) feeds argon gas in ion source.
In above-mentioned preparation method, step (3) when the metallics of sputter is deposited on workpiece surface on metal targets, is utilized the gaseous ion Shu Chixu bombardment depositional coating surface of assistant depositing ion source emission in the plasma sputter source, forms gradient transitional lay.
In above-mentioned preparation method, the Kaufman ion source is adopted in the plasma sputter source of step (3); Metal targets can be any metal among Ti, Cr, Zr, W, the Nb; The ion beam energy of plasma sputter source emission is 300-4000eV, and line is 10-200mA.
In above-mentioned preparation method, the assistant depositing ion source of step (3) can adopt any ion source in Kaufman ion source, radio-frequency induction coupling ion source, the electron cyclotron resonace ion source; Successively in the plasma sputter source, feed argon gas, argon gas/nitrogen mixture, argon gas/nitrogen/carbonaceous gas gas mixture, argon gas/carbonaceous gas gas mixture; The ion beam energy of assistant depositing ion source emission is 50-1000eV, and line is 10-200mA.
In above-mentioned preparation method, the gradient transitional lay of step (3) preparation comprises Ti/TiN/TiCN/TiC, Cr/CrN/CrCN/CrC, Zr/ZrN/ZrCN/ZrC, W/WC, Nb/NbN/NbC constant gradient transition layer.
In above-mentioned preparation method, step (4) is utilized one or several plasma sputter source sputtered carbon particle on the graphite target, utilize one or several plasma sputter source splash-proofing sputtering metal particle on the metal targets, utilize the gaseous ion of assistant depositing ion source emission to continue bombardment depositional coating surface simultaneously, regulate and control doping DLC coating microtexture and realize multi-element doping.
In above-mentioned preparation method, the Kaufman ion source is adopted in the plasma sputter source of step (4) sputter graphite target, and the ion beam energy of plasma sputter source emission is 300-4000eV, and line is 10-200mA.
In above-mentioned preparation method, the Kaufman ion source is adopted in the plasma sputter source of step (4) splash-proofing sputtering metal target, metal targets can be metallic target, alloys target or damascene target, and the ion beam energy of plasma sputter source emission is 300-4000eV, and line is 10-200mA.
In above-mentioned preparation method, step (4) assistant depositing ion source can adopt any ion source in Kaufman ion source, radio-frequency induction coupling ion source, the electron cyclotron resonace ion source, except in the assistant depositing ion source, feeding argon gas or the argon gas/hydrogen mixed gas, also in the assistant depositing ion source, feed a kind of gas in the gases such as methane, acetylene, nitrogen, hydrogen sulfide, dithiocarbonic anhydride, silane, tetrafluoro-methane at least, the ionogenic ion beam energy of assistant depositing is 50-500eV, and line is 10-200mA.
The advantage of patent of the present invention is to give full play to the advantage of ion beam etching cleaning, ion beam sputter depositing, ion beam assisted depositing, utilize ion beam etching to clean the clean surface that obtains atom level, utilize ion beam assisted depositing to obtain the gradient transitional lay of high film-substrate cohesion, utilize the DLC coating of ion beam sputter depositing+ion beam assisted depositing synthetic multi-element doping on gradient transitional lay, realize the mutual supplement with each other's advantages of multiple doped element, significantly improve the over-all properties of DLC coating.
Embodiment:
Below in conjunction with specific embodiment patent of the present invention is described in further detail, but not as the qualification to patent of the present invention.
Embodiment 1
At first utilize ultrasonic cleaning technology to remove the workpiece surface pollution layer; The ar-ion beam bombardment cleaning workpiece surface that utilizes the Kaufman ion source to produce then, the clean surface of acquisition atom level.Utilize the Assisted by Ion Beam sputter-deposition technology to prepare the Ti/TiN/TiCN/TiC gradient transitional lay again; The Kaufman ion source is adopted in the plasma sputter source, and ion energy is 2000eV, and line is 100mA, and sputtering target material is a titanium; The assistant depositing ion source adopts the Kaufman ion source, successively feeds argon gas, argon gas/nitrogen mixture, argon gas/methane/nitrogen gas mixture, argon gas/methane blended gas in the assistant depositing ion source, and ion energy is 100-300eV, and line is 100mA.Utilize multiple ion-beam sputter+low energy ion beam assistant depositing method to prepare the DLC coating of Ti, Si codoped at last; With a Kaufman ion source sputter graphite target, ion energy is 1500eV, and line is 100-150mA; With a Kaufman ion source sputtered titanium target, ion energy is 800eV, and line is 5-20mA; The assistant depositing ion source adopts the Kaufman ion source, feeds argon gas and silane in the assistant depositing ion source, and ion energy is 100eV, and line is 50-150mA.
Embodiment 2
At first utilize ultrasonic cleaning technology to remove the workpiece surface pollution layer; The ar-ion beam bombardment cleaning workpiece surface that utilizes the Kaufman ion source to produce then, the clean surface of acquisition atom level.Utilize the Assisted by Ion Beam sputter-deposition technology to prepare the Cr/CrN/CrCN/CrC gradient transitional lay again; The Kaufman ion source is adopted in the plasma sputter source, and ion energy is 2000eV, and line is 100mA, and sputtering target material is a chromium; The assistant depositing ion source adopts the Kaufman ion source, successively feeds argon gas, argon gas/nitrogen mixture, argon gas/methane/nitrogen gas mixture, argon gas/methane blended gas in the assistant depositing ion source, and ion energy is 100-300eV, and line is 100mA.Utilize multiple ion-beam sputter+low energy ion beam assistant depositing method to prepare the DLC coating of Cr, F codoped at last; With a Kaufman ion source sputter graphite target, ion energy is 1500eV, and line is 100-150mA; With a Kaufman ion source sputter chromium target, ion energy is 800eV, and line is 5-20mA; The assistant depositing ion source adopts the Kaufman ion source, feeds argon gas and tetrafluoro-methane in the assistant depositing ion source, and ion energy is 100eV, and line is 50-150mA.
Embodiment 3
At first utilize ultrasonic cleaning technology to remove the workpiece surface pollution layer; The ar-ion beam bombardment cleaning workpiece surface that utilizes the Kaufman ion source to produce then, the clean surface of acquisition atom level.Utilize the Assisted by Ion Beam sputter-deposition technology to prepare the Cr/CrN/CrCN/CrC gradient transitional lay again; The Kaufman ion source is adopted in the plasma sputter source, and ion energy is 2000eV, and line is 100mA, and sputtering target material is a chromium; The assistant depositing ion source adopts the Kaufman ion source, successively feeds argon gas, argon gas/nitrogen mixture, argon gas/methane/nitrogen gas mixture, argon gas/methane blended gas in the assistant depositing ion source, and ion energy is 100-300eV, and line is 100mA.Utilize multiple ion-beam sputter+low energy ion beam assistant depositing method to prepare WS at last
2, Si codoped DLC film; With a Kaufman ion source sputter graphite target, ion energy is 1500eV, and line is 100-150mA; With a Kaufman ion source sputter tungsten target, ion energy is 600eV, and line is 5-20mA; The assistant depositing ion source adopts the Kaufman ion source, feeds argon gas, silane and dithiocarbonic anhydride in the assistant depositing ion source, and ion energy is 100eV, and line is 50-150mA.
Claims (7)
1. multiple ion-beam sputter deposition for preparing doped diamond (DLC) coating, it is characterized in that: described method is cleaned ion beam sputter depositing, ion beam assisted depositing, ion beam etching and is combined synthetic multi-element doping DLC coating, said method comprising the steps of:
(1) at first utilize ultrasonic cleaning technology to remove the matrix surface pollution layer;
(2) ar-ion beam that utilizes ion source to produce carries out the ion beam etching cleaning to workpiece surface, obtains the clean surface of atom level;
(3) utilize the ion beam assisted depositing method to prepare gradient transitional lay;
(4) utilize multiple ion-beam sputter+low energy ion beam assistant depositing method to prepare multi-element doping DLC coating.
2. according to the multiple ion-beam sputter deposition of the described preparation doping of claim 1 DLC coating, it is characterized in that: the ion source of step (2) adopts any ion source in Kaufman ion source, radio-frequency induction coupling ion source, the electron cyclotron resonace ion source, feeds argon gas in ion source.
3. according to the multiple ion-beam sputter deposition of the described preparation doping of claim 1 DLC film, it is characterized in that: step (3) in the plasma sputter source when the metallics of metal targets sputter is deposited on workpiece surface, utilize the gaseous ion Shu Chixu of assistant depositing ion source emission to bombard the rete that is deposited on workpiece surface, form gradient transitional lay.The Kaufman ion source is adopted in the plasma sputter source, and metal targets can be any metal among Ti, Cr, Zr, W, the Nb, and the ion beam energy of plasma sputter source emission is 300-4000eV, and line is 10-200mA; The assistant depositing ion source can adopt any ion source in Kaufman ion source, radio-frequency induction coupling ion source, the electron cyclotron resonace ion source, successively in the plasma sputter source, feed argon gas, argon gas/nitrogen mixture, argon gas/nitrogen/carbonaceous gas gas mixture, argon gas/carbonaceous gas gas mixture, the ionogenic ion beam energy of assistant depositing is 50-1000eV, and line is 10-200mA; The gradient transitional lay of preparation comprises Ti/TiN/TiCN/TiC, Cr/CrN/CrCN/CrC, Zr/ZrN/ZrCN/ZrC, W/WC, Nb/NbN/NbC constant gradient transition layer.
4. according to the multiple ion-beam sputter deposition of the described preparation doping of claim 1 DLC coating, it is characterized in that: step (4) is with one or several plasma sputter source sputtered carbon particle on the graphite target, with one or several plasma sputter source splash-proofing sputtering metal particle on the metal targets, utilize the gaseous ion Shu Chixu bombardment depositional coating surface of assistant depositing ion source emission simultaneously, regulation and control doping DLC coating microtexture and realization multi-element doping.
5. according to the multiple ion-beam sputter deposition of the described preparation doping of claim 1 DLC coating, it is characterized in that: the Kaufman ion source is adopted in the plasma sputter source of step (4) sputter graphite target, the ion beam energy of plasma sputter source emission is 300-4000eV, and line is 10-200mA.
6. according to the multiple ion-beam sputter deposition of the described preparation doping of claim 1 DLC coating, it is characterized in that: the Kaufman ion source is adopted in the plasma sputter source of step (4) splash-proofing sputtering metal, metal targets can be metallic target, alloys target or damascene target, the ion beam energy of plasma sputter source emission is 300-4000eV, and line is 10-200mA.
7. according to the multiple ion-beam sputter deposition of the described preparation doping of claim 1 DLC coating, it is characterized in that: step (4) assistant depositing ion source can adopt the Kaufman ion source, radio-frequency induction coupling ion source, any ion source in the electron cyclotron resonace ion source, except in the assistant depositing ion source, feeding argon gas or the argon gas/hydrogen mixed gas, also in the assistant depositing ion source, feed methane at least, acetylene, nitrogen, hydrogen sulfide, dithiocarbonic anhydride, silane, a kind of gas in the gases such as tetrafluoro-methane, the ionogenic ion beam energy of assistant depositing is 50-1000eV, and line is 10-200mA.
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