CN101786608A - Oxygen-doped II-VI semiconductor material, thin-film and prepared solar energy battery - Google Patents
Oxygen-doped II-VI semiconductor material, thin-film and prepared solar energy battery Download PDFInfo
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Y02E10/543—Solar cells from Group II-VI materials
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Abstract
The invention provides an oxygen-doped II-VI semiconductor material, thin-film and prepared solar energy battery. The invention validates that: the II-VI semiconductor material, such as ZnTe, ZnSe or ZnTel-xSex(0<x<1), is doped with oxygen, the conduction band is divided into two or more energy levels, therefore different spectrum is respectively absorbed and the photoelectricity conversion efficiency of the semiconductor material is greatly increased. The oxygen-doped II-VI semiconductor material is formed by spraying high-purity II-VI semiconductor material by passing over a work gas with pressure of 10Torr-100Torr mixed by oxygen with pressure of 1mTorr-1Torr and argon gas at 120-300DEG C, wherein the oxygen-doped concentration is 1018cm-3-1021cm-3 and the thickness is about 500nm-5000nm. The oxygen-doped II-VI semiconductor material does not contains poisonous material and the material chemical structure is stable and the cost is low and the oxygen-doped II-VI semiconductor material can grow on a bendable substrate at lower 200DEG C and be widely used in preparing solar energy batteries, liquid crystal display screens and thin film transistors.
Description
Technical field
The invention belongs to technical field of semiconductor, be specifically related to the solar cell of a kind of oxygen-doped II-VI semiconductor material, film and preparation thereof.
Background technology
The energy band structure of conventional semiconductors and principle as shown in Figure 1, wherein Efe is a semi-conductor material electronics fermi level, Efv is the semiconductor hole fermi level.To have energy be the photon of hv1 when being absorbed by semiconductor material when one, and the photovoltaic electric energy of its generation is output as eVout.When wherein the bandwidth of the energy requirement of photon hv1 and semiconductor material is suitable, just have photovoltaic efficiency of conversion more efficiently.That is to say that for a kind of semiconductor material as opto-electronic conversion, its absorption to solar spectrum is concentrated in certain wavelength, so its final photoelectric transformation efficiency is also just more limited.
II-VI family semi-conductor is formed by II family element such as Be, Mg, Zn, Cd, Hg etc. and VI family element such as O, S, chemical combination such as Se, Te.Because II-VI family semi-conductor has very big energy gap scope, characteristics such as direct transition band gap, it is the research focus of optoelectronic areas always, its application mainly contains the following aspects: CdHgTe is applied to infrared eye, ZnSeTe is as blue light-emitting diode, ZnMgO is used for the detection of UV-light, and CdTe is as the thin film solar material.
Sun power more and more causes people's attention as a kind of reproducible new forms of energy.Photovoltaic generation is a kind of mode that sun power utilizes, and the effect of and environmental protection energy-conservation because of it is subjected to paying attention to widely.When Nonrenewable energy resources such as electric power, coal, oil signal for help repeatedly, when energy problem became the bottleneck of restriction international community Economic development day by day, more and more countries came into effect " sunlight program ", and the exploitation solar energy resources is sought the new power of Economic development.If the sun power of earth surface 0.1% is transferred to electric energy, number turnover 5%, annual generated energy can reach 5.6 * 10
12Kilowatt-hour, be equivalent at present 40 times of energy consumption in the world.From the angle of power supply safety and clean utilization, countries in the world are just the commercial development of sun power with utilize as important development trend.European Union, Japan and the U.S. the year two thousand thirty after power supply safety focus on renewable energy source aspects such as sun power.Expect the year two thousand thirty solar electrical energy generation and will account for more than 20% of world's supply of electric power, the year two thousand fifty reaches more than 50%.Large-scale development and utilization will occupy a tiny space sun power in whole power supply.
Recent years, the photovoltaic generation development was rapid, and photovoltaic technology is constantly progressive, and the cost of photovoltaic generation constantly reduces, and made photovoltaic generation become development recent years industry the most rapidly.The photovoltaic technology development is the main flow of commercialization photovoltaic cell as the photronic crystal silicon photovoltaic cell of the first-generation so far all the time.High-purity polycrystalline silicon material also just becomes most important link on the photovoltaic industry chain, its price continuous rise.Because developing rapidly of photovoltaic industry, the raw-material short supply state of polycrystalline silicon is more and more serious, has become the bottleneck of whole photovoltaic industrial chain, has not only limited the growth of solar cell output, and makes the cost of solar module high.In addition, need to consume a large amount of non-renewable waste material of a large amount of electric power and generation environmental pollution in raw-material production of polycrystalline silicon and the purification process, seriously restricted the development in whole photovoltaic industry and market.
As s-generation photocell, film class solar cell has that raw materials consumption is few, and substrate is bent, and the comparatively cheap characteristics of cost.At present each research and development institution and production firm have reported or have released each based thin film solar cell, comprise the big sun energy battery of non-type silicon solar cell, gallium arsenide (GaAs) III-V compounds of group, cadmium telluride (CdTe), battery such as copper-indium-galliun-selenium (CuInGaSe) multi-element compounds of etc.ing, functional high molecule material preparation and nano-crystalline solar battery etc.But above-mentioned thin film solar technology all has bigger limitation, comprise relatively low transformation efficiency (non-type silicon and Cadimium telluride thin film battery: 6-8%), poisonous (is a kind of poisonous element in the Cadimium telluride thin film, all very harmful to human body and environment), and material expensive (phosphide element in the CIGS thin-film is very expensive, and indium and selenium are rare elements, and its source is limited).
Summary of the invention
The principle that the present invention utilizes the gap to be with is utilized the semi-conductor in II-VI family first, as ZnTe, and ZnSe or ZnTe
1-xSe
xTwo or more energy levels of oxygen-doped generation absorb different spectrum in the light source (as sunlight) respectively in (0＜x＜1), prepare oxygen-doped II-VI semiconductor material.
Zinc telluridse is a kind of direct energy-gap semiconductor material, and its bandwidth is 2.29eV (ev) when room temperature (25 ℃).Because there is natural defective in material, the zinc telluridse material is the P-N-type semiconductorN when undoped.Arrive in the zinc telluridse material by oxygen-doped, according to being with anti-crossing model (bandanti-crossing model), conduction band structure in being with of zinc telluridse can correspondingly be split into two, be illustrated in figure 2 as the energy band structure and the principle schematic of oxygen-doped II-VI semiconductor material provided by the present invention, owing to can be with division, the photon that makes energy be respectively hv1, hv2, hv3 all might be absorbed by oxygen-doped II-VI semiconductor material and produce opto-electronic conversion, thereby improves its electricity conversion as semiconductor material greatly.
The objective of the invention is to, a kind of novel oxygen-doped II-VI semiconductor material is provided.
Another object of the present invention is to, the preparation method and its usage of described oxygen-doped II-VI semiconductor material is provided.
For achieving the above object, the present invention realizes by the following technical solutions.On the one hand, oxygen-doped II-VI semiconductor material provided by the present invention, it is by oxygen-doped formation of II-VI family semiconductor material, and preferably, described II-VI family semiconductor material is selected from ZnTe, ZnSe and ZnTe
1-xSe
x(0＜x＜1).
Preferably, described material is under 120 ℃～300 ℃ temperature, feeding pressure is that oxygen and the argon gas mixing formation pressure of 1mTorr～1Torr is the working gas of 10Torr～100Torr, and sputter high purity (＞99.9995%) II-VI family semi-conductor forms.
Preferably, the oxygen-doped concentration in the described material is 10
18Cm
-3～10
21Cm
-3
On the other hand, the preparation method of oxygen-doped II-VI semiconductor material provided by the present invention, it is under 120 ℃～300 ℃ temperature, feeding pressure is the oxygen of 1mTorr～1Torr, mixing formation pressure with argon gas is the working gas of 10Torr～100Torr, and sputter high purity (＞99.9995%) II-VI family semi-conductor forms.
Another aspect, the film of being made by aforementioned oxygen-doped II-VI semiconductor material provided by the present invention, its thickness are 500 nanometers～5000 nanometers.Film provided by the present invention has important use in preparation solar cell, liquid crystal display, thin film transistor, electroluminescent display and organic and inorganic semiconductor laser apparatus etc.
In a preferred embodiment, the present invention also provides a kind of solar cell, and it comprises film substrate, n-N-type semiconductorN, buffer layer, light absorbing zone and p-N-type semiconductorN, and wherein said light absorbing zone is aforesaid oxygen-doped II-VI semiconductor film.
Preferably, solar cell provided by the present invention, it also comprises the metal that lays respectively on n-N-type semiconductorN and the p-N-type semiconductorN, constitutes the two poles of the earth of battery.
Preferably, wherein said film substrate is selected from plastics, glass or sheet metal; Described n-N-type semiconductorN is selected from adulterated zinc oxide of n-type or magnesium zinc; Described buffer layer is selected from zinc selenide or selenium zinc telluridse; Described p-N-type semiconductorN is selected from the adulterated zinc telluridse of p-type; Described metal is selected from nickel au-alloy or titanium alloy, can certainly be other alloy, as long as can form good ohmic contact, and as corronel, CTB alloy etc.
The application of solar cell provided by the present invention in preparation field of solar thermal power generation product and mobile electronic terminal product, described field of solar thermal power generation comprises resident, factories and miness, business premises roof, automobile case and solar power plant, and described mobile electronic terminal product is selected from counter, notebook computer, mobile phone, digital camera, digital video camcorder, wireless mouse, bluetooth earphone, MP3 player, PDA(Personal Digital Assistant), personal navigation system and GPS global location instrument.
In sum, oxygen-doped II-VI semiconductor material provided by the present invention is by the energy band structure of oxygen-doped change zinc telluridse, two or more energy levels that produce can absorb and produce opto-electronic conversion respectively, thereby improve its electricity conversion greatly as semiconductor material, the steady chemical structure of this material own, also have environmental protection, low cost and other advantages, have the following advantages by the thin-film solar cells of its oxygen-doped II-VI semiconductor film preparation of making:
1. high-photoelectric transformation efficiency
As previously described, by the energy band structure of oxygen-doped change zinc telluridse, thereby the oxygen-doped zinc telluridse thin-film solar cell photoelectric efficiency of conversion physical theory limit is brought up to more than 62%, actual product can finally reach 35-45%.
2. easy of integration
Oxygen-doped zinc telluridse thin-film solar cells material can have very low material growth temperature (200 ℃).Confirm that successfully oxygen-doped zinc telluridse thin-film solar cells material can be grown directly upon on glass or the plastics film, have very high crash resistance and bending resistance folding endurance, easily shells such as realization and notebook computer, mobile phone, digital camera and MP3 walkman is integrated.
3. high reliability and long service life
Oxygen-doped zinc telluridse thin-film solar cells material has highly stable chemical property, and its fusing point is greater than 1200 ℃.Traditional silicon solar cell life-span confirmed greater than 20 years, and the stability and the silicon single crystal of oxygen-doped zinc telluridse material are similar, and the useful life of its thin-film solar cells should be more than 20 years.
4. light and beautiful environmental protection
Oxygen-doped zinc telluridse thin-film solar cells material adopts human and environmentally friendly zinc element, tellurium element and oxygen element.The gauge control of whole hull cell is below 10 microns, do not contain any material that human body and environment is had harm in the final solar battery product.
5. low-cost
Because zinc element, tellurium element and oxygen element in the oxygen-doped zinc telluridse thin-film solar cells material all have low-down raw materials cost, the production cost of this thin-film solar cells also can be significantly less than crystal silicon photovoltaic cell.
Compare with existing heliotechnics, the oxygen-doped zinc telluridse thin-film solar cells among the present invention has high-photoelectric transformation efficiency, low preparation temperature, lower production cost, long lifetime does not contain characteristics such as poisonous element, has high business development potentiality and very good public and social interest's benefit.
Traditional silicon solar cell has only a semiconductor junctions, that is to say, can only absorb a kind of spectrum (for example ruddiness) in the sunlight effectively, and its electricity conversion is restricted, and the maximum electricity conversion of Theoretical Calculation is 33%.Along with updating of experimental technique, at present the single-unit silicon solar cell efficient of prepared in laboratory is up to 25%, and just 76% of theoretical value.Compare silicon solar cell with single-unit, oxygen-doped zinc telluridse is equivalent to have three semiconductor junctions of different energy levels, and its theoretical electricity conversion is 62%.Can expect that in laboratory or scale operation, the electricity conversion of oxygen-doped zinc telluridse solar cell can be increased to 35%-45% gradually, substantially exceeds single-unit silicon solar cell efficient along with the improvement of oxygen-doped zinc telluridse material and device technology.
The thin-film solar cells of the oxygen-doped zinc telluridse that the present invention developed can thoroughly be broken the undue dependence for the silicon raw material supplying of present traditional silicon single crystal, polycrystalline silicon solar product, cost for solar power generation is reached or be lower than 1 dollar/peak watt, thereby make the large-scale application of sun power and replace traditional generation mode to become possibility.The extensive utilization of present technique can be reduced to 3-5 cent/kilowatt-hour with present 15-20 cent/kilowatt-hour photovoltaic generation cost, can compare favourably with the thermal power generation cost, thereby bring the improvement of worldwide energy structure and nearly trillion dollars year economic benefit, and reduce topsoil and emission amount of carbon dioxide in a large number.Because oxygen-doped zinc telluridse thin-film solar cells has easy of integration, high reliability, long service life, light and beautiful environmental protection and characteristics cheaply, this based thin film solar cell all can be installed in common resident, factories and miness, business premises roof, provides electric power for living and producing office.In addition, but oxygen-doped zinc telluridse thin-film solar cells also large scale deployment form the solar power plant in underpopulated city suburbs or desert area, being connected to the grid provides electric power for bigger zone.
Description of drawings
Below, describe embodiments of the invention in conjunction with the accompanying drawings in detail, wherein:
Fig. 1 is the energy band structure and the principle schematic of conventional semiconductor material;
Fig. 2 is the energy band structure and the principle schematic of oxygen-doped II-VI semiconductor material of the present invention;
Fig. 3 A to Fig. 3 C is the X ray photoelectric table measuring result figure of the oxygen-doped zinc telluridse semiconductor material of the present invention;
Fig. 4 is the structural representation of the oxygen-doped zinc telluridse thin-film solar cells of the present invention;
Fig. 5 is the current-voltage measuring result figure of the oxygen-doped zinc telluridse thin-film solar cells of the present invention;
Fig. 6 is for using the end product synoptic diagram of the oxygen-doped zinc telluridse thin-film solar cells of the present invention.
Embodiment
Further set forth the present invention below in conjunction with preferred embodiment, but these embodiment only limit to illustrate the present invention, can not limit the scope of the invention.
Employed in the present invention sputtering method is one of modal method in the semiconductor growth techniques, and the starting material target source of various needs can obtain on market.
Embodiment 1: oxygen-doped ZnTe semiconductor material and preparation method thereof
Present embodiment is oxygen-doped zinc telluridse provided by the present invention (ZnTe:O) and preparation method thereof.
Oxygen-doped zinc telluridse provided by the present invention is by about 200 ℃, feeding pressure is the oxygen of 1mTorr～1Torr, mixing formation pressure with argon gas is the working gas of 10Torr～100Torr, sputter high purity (＞99.9995%) ZnTe target forms, and the oxygen-doped concentration of prepared oxygen-doped zinc telluridse is 10
18Cm
-3～10
21Cm
-3, thickness is about 2000 nanometers.
More than preparation is finished in Enerjet III sputter platform (available from U.S. KDF company).
Adopt X ray photoelectricity spectrometer (X-ray photoelectron spectroscopy, Kratos AxisUltra XPS) measures prepared oxygen-doped zinc telluridse semiconductor material, the result is shown in Fig. 3 A to Fig. 3 C, wherein Fig. 3 A is the zinc peak of oxygen-doped zinc telluridse semiconductor material, Fig. 3 B is the tellurium peak of oxygen-doped zinc telluridse semiconductor material, Fig. 3 C is the oxygen peak of oxygen-doped zinc telluridse semiconductor material, wherein the condition shown in the figure 1, condition 2 and condition 3 are distinguished corresponding 100mTorr, the oxygen pressure of 50mTorr and 10mTorr.
Embodiment 2: oxygen-doped zinc telluridse thin-film solar cells and preparation method thereof
Present embodiment is oxygen-doped zinc telluridse thin-film solar cells provided by the present invention and preparation method thereof.
The structure of oxygen-doped zinc telluridse thin-film solar cells provided by the present invention as shown in Figure 3.The thickness of this thin-film solar cells is no more than 10 microns, and details are as follows for its structure composition:
Substrate (Sub) is glass or transparent plastics;
The 4th layer (EP4) is the n-N-type semiconductorN of high conduction, is specially the adulterated zinc oxide of n-type (ZnO), or magnesium zinc (ZnMgO), and its thickness is 300 nanometers, and electron density is greater than 10
18Cm
-3, resistivity is less than 0.05 ohmcm.
The 3rd layer (EP3) is buffer layer, is the zinc selenide (ZnSe) that can grow under the room temperature, and thickness is 50 nanometers, and this buffer layer is used to reduce defect concentration between n-N-type semiconductorN and light absorbing zone, improves the efficiency of conversion of solar cell greatly.
The second layer (EP2) is a light absorbing zone most crucial in the solar cell, and oxygen-doped zinc telluridse promptly provided by the present invention (ZnTe:O), its thickness are 2000 nanometers.
The first layer (EP1) is the p-N-type semiconductorN of high conduction, is the adulterated zinc telluridse of p-type (ZnTe), and its thickness is 100 nanometers, and its p type carrier concentration is greater than 10
19Cm
-3, resistivity is less than 0.01 ohmcm.
Metal one (M1) is nickel au-alloy (AuNi), and metal two (M2) is titanium alloy (AuTi), and its thickness is respectively 100 nanometers, is used for connecting the thin-film solar cells unit and reduces resistance, and the two forms the two poles of the earth of oxygen-doped zinc telluridse thin-film solar cells jointly.
The preparation method of the oxygen-doped zinc telluridse thin-film solar cells of the present invention is as follows:
At first, four layers of (EP4) film of growth regulation on glass or transparent plastic substrate, the adulterated zinc oxide of n-type (ZnO), or magnesium zinc (ZnMgO).It can be about 200 ℃, and feeding pressure is that oxygen and the argon gas mixing formation pressure of 1Torr is the working gas of 10Torr～100Torr, and sputter high purity (＞99.9995%) ZnO or ZnMgO target form.
Secondly, growth regulation three layers of (EP3) material zinc selenide (ZnSe) can be about 200 ℃, and in the atmosphere of nitrogen, operating air pressure is 35Torr, and sputter high purity (＞99.9995%) ZnSe target forms.
Once more, the growth oxygen-doped zinc telluridse of the second layer (EP2) material (ZnTe:O), about 200 ℃, feeding pressure is the oxygen of 1mTorr～1Torr, mixing formation pressure with argon gas is the working gas of 10Torr～100Torr, and sputter high purity (＞99.9995%) ZnTe target forms.
The 4th, growth regulation one deck (EP1) material adulterated zinc telluridse of p-type (ZnTe) can be about 200 ℃, and in the atmosphere of nitrogen, operating air pressure is 35Torr, and sputter high purity (＞99.9995%) ZnTe target forms.
The 5th, growing metal one (M1) nickel au-alloy can be at room temperature, ar pressure 40Torr, spatter film forming.
The 6th, growing metal two (M2) titanium alloy can be at room temperature, ar pressure 40Torr, spatter film forming.
More than all are grown in the Enerjet III sputter platform (available from U.S. KDF company) and finish.
For current-voltage (I-V) measuring result of the prepared oxygen-doped zinc telluridse thin-film solar cells of the present invention as shown in Figure 5, measure with Hewlett-Packard's semiconductor analysis instrument (HP4145B) having under the standard solar irradiation condition (AM1.5).As can be seen from Figure 5, when oxygen-doped zinc telluridse thin-film solar cells is subjected to illumination, produced the photoelectric current of highly significant.Experimental parameter, wherein illumination power is 100mW/cm
2, the sample size size is 1cm
2, output rating is 10.8mW, the actual transformation efficiency that calculates this oxygen-doped zinc telluridse thin-film solar cells is 10.8%.
Embodiment 3: the application of oxygen-doped zinc telluridse thin-film solar cells
Present embodiment is the application of the oxygen-doped zinc telluridse thin-film solar cells of the present invention.
The oxygen-doped zinc telluridse thin-film solar cells that the present invention developed, can be widely used in the field of solar thermal power generation power supply that comprises the generating of civilian and commercial roof, personal portable electronic product and the medium-scale of charging, city suburbs and go into the large solar power house etc. of electrical network.
1. solar cell of the present invention is in the application of field of solar thermal power generation
Because oxygen-doped zinc telluridse thin-film solar cells has easy of integration, high reliability, long service life, light and beautiful environmental protection and characteristics cheaply, common resident, factories and miness, business premises roof, automobile case all can be installed this based thin film solar cell, for life, production office and communications and transportation provide electric power.In addition, but oxygen-doped zinc telluridse thin-film solar cells also large scale deployment form the solar power plant in underpopulated city suburbs or desert area, being connected to the grid provides electric power for bigger zone.
2. the application of solar cell of the present invention in portable electronic products
The mobile electronic terminal product, for example (as shown in Figure 6) such as counter, notebook computer, wireless mouse, mobile phone, digital camera, digital video camcorder, bluetooth earphone, MP3 player, GPS global location instrument, PDA (personal digital assistant) and personal navigation systems, become the indispensable part of the modern life.But their performance and application all are subjected to the restriction of cell container own.Under the prior art condition, cells in notebook computer can only be kept about three hours document process usually, and two hours DVD plays; Battery of mobile phone also can only provide the conversation about three hours; No. 7 batteries of one joint also can only be kept 7 hours work of MP3 player.These are very inconvenience for the people that needs are often gone on a journey.The solar cell that is integrated on the electronics can directly obtain luminous energy and be converted into electric energy from any light source (sun, indoor and outdoor lighting lamp, even the ir radiation of high temp objects).In light intensive occasion (Tian'anmen Square when fine), solar cell itself can provide enough big power to keep mobile electronic terminal work, simultaneously chemical cell is charged.In the more weak occasion of light (as indoor), solar cell can obtain energy from head light, thereby prolongs chemical cell duration of service greatly, improves the service efficiency of the energy simultaneously.
The oxygen-doped zinc telluridse thin-film solar cells of new and effective semi-conductor of the present invention material can be grown on the bendable material (for example plastics) under 200 ℃ of base reservoir temperatures.Making so the oxygen-doped zinc telluridse thin-film solar cells of semi-conductor material directly is integrated on the mobile electronic terminal product casing shown in Fig. 6 becomes possibility, can directly drive these products or be their charging of accumulators.Through calculating, under the sunlight intensity of standard (AM1.5), adopt the integrated oxygen-doped zinc telluridse thin-film solar cells of shell can directly drive low-power equipments such as MP3.For the high-power mobile electronic device as the notebook computer, the integrated oxygen-doped zinc telluridse thin-film solar cells of shell can constantly be given its charging of accumulators, makes it no longer need external source.Except above-mentioned mobile electronic terminal product, oxygen-doped zinc telluridse thin-film solar cells directly can also be made on the film substrate that can curl, become the portable type solar energy charger.When not needing to charge, this film substrate can be accepted as painted scroll, becomes lip pencil, and it is very little to take volume; When needs charged to mobile electronic terminal, film substrate can be launched, and received luminous energy as much as possible, and the charging inlet (for example USB interface) that the electric energy that luminous energy can be converted is directly inputted to the mobile electronic terminal product charges to it.
In sum, proposed first in the present invention and verified by carrying out oxygen-doped to the zinc telluridse material, can make its conduction band be split into two or more energy levels, thereby absorb spectrum different in the sunlight respectively and improve its electricity conversion greatly as solar cell material.Compare with existing thin-film solar cells material, oxygen-doped zinc telluridse material does not contain Toxic matter, itself materials chemistry Stability Analysis of Structures, with low cost, and can be grown in the bent substrate that is lower than 200 ℃.Except oxygen-doped zinc telluridse thin-film solar cells can be applied in the resident, commercial generate electricity and generate electricity by way of merging two or more grid systems on a large scale with the factories and miness roof, it can also be integrated on the shell of all kinds of portable electronic terminal products, charges for the direct power supply of these mobile electronic terminals or to its store battery.
Claims (10)
1. an oxygen-doped II-VI semiconductor material is characterized in that, described material is by oxygen-doped formation of II-VI family semiconductor material, and preferably, described II-VI family semiconductor material is selected from ZnTe, ZnSe and ZnTe
1-xSe
x, 0＜x＜1 wherein.
2. material according to claim 1, it is characterized in that, described material is under 120 ℃～300 ℃ temperature, feeding pressure is the oxygen of 1mTorr～1Torr, mixing formation pressure with argon gas is the working gas of 10Torr～100Torr, and the II-VI family semi-conductor of sputter purity＞99.9995% forms.
3. material according to claim 1 and 2 is characterized in that, the oxygen-doped concentration in the wherein said material is 10
18Cm
-3～10
21Cm
-3
4. each described preparation methods in the claim 1 to 3, it is under 120 ℃～300 ℃ temperature, feeding pressure is the oxygen of 1mTorr～1Torr, mixing formation pressure with argon gas is the working gas of 10Torr～100Torr, and the II-VI family semi-conductor of sputter purity＞99.9995% forms.
5. the film that each described material is made in the claim 1 to 3, preferably, the thickness of described film is 500 nanometers～5000 nanometers.
6. the purposes of the described film of claim 5 in preparation solar cell, liquid crystal display, thin film transistor, electroluminescent display and organic and inorganic semiconductor laser apparatus.
7. solar cell, its structure comprises: film substrate, n-N-type semiconductorN, buffer layer, light absorbing zone and p-N-type semiconductorN, wherein said light absorbing zone are the described film of claim 5.
8. solar cell according to claim 7 is characterized in that, it also comprises the metal that lays respectively on n-N-type semiconductorN and the p-N-type semiconductorN, constitutes the two poles of the earth of battery.
9. according to claim 7 or 8 described solar cells, it is characterized in that wherein said film substrate is selected from plastics or glass; Described n-N-type semiconductorN is selected from adulterated zinc oxide of n-type or magnesium zinc; Described buffer layer is selected from zinc selenide; Described p-N-type semiconductorN is selected from the adulterated zinc telluridse of p-type; Described metal is selected from nickel au-alloy, titanium alloy, corronel and CTB alloy.
10. the application of each described solar cell in preparation field of solar thermal power generation product and mobile electronic terminal product in the claim 7 to 9, described field of solar thermal power generation comprises resident, factories and miness, business premises roof, automobile case and solar power plant, and described mobile electronic terminal product is selected from counter, notebook computer, mobile phone, digital camera, digital video camcorder, wireless mouse, bluetooth earphone, MP3 player, personal digital assistant, personal navigation system and GPS global location instrument.
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|---|---|---|---|
| US13259108P | 2008-06-21 | 2008-06-21 | |
| US61/132,591 | 2008-06-21 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102231402A (en) * | 2011-07-14 | 2011-11-02 | 四川大学 | II-VI-group diluted oxide semiconductor thin film solar cell |
| CN102983782A (en) * | 2011-09-06 | 2013-03-20 | 吉富新能源科技(上海)有限公司 | Oven with thin film solar cells |
-
2009
- 2009-02-27 CN CN200910118667A patent/CN101786608A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102231402A (en) * | 2011-07-14 | 2011-11-02 | 四川大学 | II-VI-group diluted oxide semiconductor thin film solar cell |
| CN102231402B (en) * | 2011-07-14 | 2013-05-08 | 四川大学 | II-VI-group diluted oxide semiconductor thin film solar cell |
| CN102983782A (en) * | 2011-09-06 | 2013-03-20 | 吉富新能源科技(上海)有限公司 | Oven with thin film solar cells |
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Application publication date: 20100728 |