CN101784142B - Light emitting diode circuit with high light-regulating frequency - Google Patents

Light emitting diode circuit with high light-regulating frequency Download PDF

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Publication number
CN101784142B
CN101784142B CN200910003684XA CN200910003684A CN101784142B CN 101784142 B CN101784142 B CN 101784142B CN 200910003684X A CN200910003684X A CN 200910003684XA CN 200910003684 A CN200910003684 A CN 200910003684A CN 101784142 B CN101784142 B CN 101784142B
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signal
circuit
oxide semiconductor
power metal
light emitting
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CN101784142A (en
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陈廷仰
李秋平
尹明德
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YUANJING TECHNOLOGY Co Ltd
Himax Technologies Ltd
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YUANJING TECHNOLOGY Co Ltd
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Abstract

The invention relates to a light emitting diode circuit which comprises an inductor, a group of light emitting diodes, a capacitor, a power metal oxide semiconductor and a switching circuit. The inductor is electrically connected with a supply power source and a first node; the group of light emitting diodes are electrically connected with the first node and an earthing potential; the capacitor is electrically connected with the first node and the earthing potential; the power metal oxide semiconductor is electrically connected with the first node and the earthing potential, and a switching signal is received by the grid electrode of the power metal oxide semiconductor, so that the capacitor is charged by the power metal oxide semiconductor when the power metal oxide semiconductor is conducted so as to further conduct the group of light emitting diodes, and the capacitor is discharged when the power metal oxide semiconductor is cutoff so as to further cut off the group of light emitting diodes; and the switching circuit is used for generating the switching signal.

Description

The circuit of LED of high light modulating frequency
Technical field
The invention relates to a kind of circuit of LED, and particularly relevant for a kind of circuit of LED with high light modulating frequency.
Background technology
Light emitting diode estimates to be about the performance of four times of conventional bulb on usefulness.Compare with the fluorescent tube with poisonous mercury, light emitting diode is safety not only, more can on durability degree, outstanding performance be arranged.Therefore, on lighting, light emitting diode is because economy and security, and becomes most important mainstream technology.
The drive circuit of traditional light emitting diode drives with the operating frequency that is lower than 1KHz usually.Because lower operating frequency, people's ear is heard the audio frequency that light emitting diode produces most probably under the vibration of this low frequency, and feels noisy and endurable.Therefore, if can drive in the mode of high frequency, will be solution.But, under the situation of the frequency gets higher of the dim signal that be responsible for to drive, produce according to dim signal, be supplied to the electric current of light emitting diode, the extremely difficult stability of keeping linearity, and can when high frequency, can't light emitting diode be charged completely, and then make light-emitting diode luminance can't reach due level, human eye is not felt well.
Therefore, how designing a new circuit of LED, make circuit of LED under the running of high frequency, can not lose the linearity of electric current, and can keep enough brightness, is the industry problem demanding prompt solution.
Summary of the invention
Therefore purpose of the present invention just provides a kind of circuit of LED, comprises: inductance, one group of light emitting diode, electric capacity, power metal-oxide semiconductor and on-off circuit.Inductance is electrically connected supply power supply and first node; This group light emitting diode is electrically connected at first node and earthing potential; Electric capacity is electrically connected first node and earthing potential; Power metal-oxide semiconductor is electrically connected at first node and earthing potential, the grid receiving key signal of power metal-oxide semiconductor, so that power metal-oxide semiconductor charges to electric capacity when conducting, with this group light emitting diode of further connection, and when power metal-oxide semiconductor ends, electric capacity is discharged, with this group light emitting diode of further shutoff; And on-off circuit, in order to produce switching signal, comprise: control module, error amplifier and pulse width modulation module.Control module has the dim signal in high potential cycle and electronegative potential cycle in order to reception, so that produce control signal according to dim signal; Error amplifier produces error signal according to this control module of process of control module output with the signal after this dim signal step-down; And the pulse width modulation module is in order to comparison error signal and reference signal, to produce comparative result, control signal control impuls width modulation module, so that when dim signal at high potential during the cycle, the pulse width modulation module is connected, when dim signal at electronegative potential during the cycle, the pulse width modulation module shuts down, wherein switching signal high potential during the cycle according to comparative result conducting power metal-oxide semiconductor, and end power metal-oxide semiconductor during the cycle at electronegative potential.
The invention has the advantages that can be according to dim signal, only close the pulse width modulation module during cycle at electronegative potential, the Integral luminous diode circuit must not turn-offed, and can be in response under the high frequencies of operation, rapidly light emitting diode is discharged and recharged, and reach easily above-mentioned purpose.
Behind the embodiment of consulting accompanying drawing and describing subsequently, those skilled in the art just can understand purpose of the present invention, and technological means of the present invention and enforcement aspect.
Description of drawings
For above and other objects of the present invention, feature, advantage and embodiment can be become apparent, being described in detail as follows of accompanying drawing formula:
Fig. 1 is the circuit diagram of the circuit of LED of the first embodiment of the present invention;
Fig. 2 is the circuit diagram of the on-off circuit of the first embodiment of the present invention; And
Fig. 3 is the oscillogram of the voltage of dim signal, error signal, reference signal, comparative result, switching signal and first node in one embodiment of the invention.
[primary clustering symbol description]
1: circuit of LED 10: inductance
11: first node 12: light emitting diode
13,13 ': switching signal 14: electric capacity
15: electric current 16: power metal-oxide semiconductor
18: on-off circuit 200: control module
201,201 ': dim signal 202: error amplifier
203: control signal 204: oscillating circuit
205: error signal 206: the pulse width modulation module
207: reference signal 208: gate drivers
210: current detection module 30: comparative result
The specific embodiment
Please refer to Fig. 1, be the circuit diagram of the circuit of LED 1 of the first embodiment of the present invention.Circuit of LED 1 comprises: inductance 10, one group of light emitting diode 12, electric capacity 14, power metal-oxide semiconductor 16 and on-off circuit 18.Inductance 10 is electrically connected supply power supply (voltage supply) Vp and first node 11; This group light emitting diode 12 is electrically connected at first node 11 and earthing potential; Electric capacity 14 is electrically connected first node 11 and earthing potential.Power metal-oxide semiconductor 16 is electrically connected at first node 11 and earthing potential, power metal-oxide semiconductor 16d grid receiving key signal 13, so that power metal-oxide semiconductor 16 charges to electric capacity 14 when conducting, with this group light emitting diode 12 of further connection, and when power metal-oxide semiconductor 16 cut-off, electric capacity 14 is discharged, with this group light emitting diode 12 of further shutoff.On-off circuit 18 with the break-make of power ratio control metal-oxide semiconductor (MOS) 16, and then makes this group light emitting diode 12 connect and turn-off with a predefined frequency in order to produce switching signal 13.If this predefined frequency is lower frequency, then people's ear is heard the audio frequency that each assembly of circuit of LED 1 produces most probably under the vibration of this low frequency, and feels noisy and endurable.
Please refer to Fig. 2, be the circuit diagram of the on-off circuit 18 of the first embodiment of the present invention.On-off circuit 18 comprises control module 200, error amplifier 202, oscillating circuit 204, pulse width modulation module 206, gate drivers 208 and current detection module 210.Control module 200 has the dim signal 201 in high potential cycle and electronegative potential cycle in order to reception, so that produce control signal 203 according to dim signal 201.Dim signal 201 is essentially the square wave of high frequency, and its medium-high frequency refers to surpass the frequency of 30KHz.Error amplifier 202 produces error signal 205 according to the dim signal 201 ' of control module 200 outputs.Wherein dim signal 201 ' is that dim signal 201 is through the result after control module 200 step-downs.Oscillating circuit 204 produces has the reference signal 207 of zigzag waveform.Pulse width modulation module 206 is in order to comparison error signal 205 and reference signal 207, to produce comparative result.In fact, error signal 205 is also as the voltage of a reference of pulse width modulation module 206.Control signal 203 is produced by control module 200, with control impuls width modulation module 206 so that when dim signal 201 at high potential during the cycle, pulse width modulation module 206 is connected, when dim signal 201 at electronegative potential during the cycle, pulse width modulation module 206 is turn-offed.Therefore, during the cycle, switching signal 13 ' is produced by pulse width modulation module 206 at high potential, and according to comparative result conducting power metal-oxide semiconductor 16.During the cycle, switching signal 13 ' is ended power metal-oxide semiconductor 16 at electronegative potential.Meaning namely, switching signal 13 ' is in order to driving power metal-oxide semiconductor (MOS) 16, and sets the operating frequency of this group light emitting diode 12, to determine the brightness of this group light emitting diode 12.
As shown in fig. 1, gate drivers 208 is connected between pulse width modulation module 206 and the power metal-oxide semiconductor 16, to strengthen the driving force of switching signal 13 ', become the switching signal 13 of higher voltage level, so that stronger to the driving force of power metal-oxide semiconductor 16.Therefore, control signal 203 also can be connected gate drivers 208 at high potential during the cycle, and during the cycle, turn-offs gate drivers 208 at electronegative potential.It is noted that gate drivers 208 and non-essential assembly.When the intensity of switching signal 13 ' enough the time, namely gate drivers 208 must be set.And current detection module 210 as shown in Figure 1, connects first node 11, to receive the also electric current 15 of detection power metal-oxide semiconductor (MOS) 16.Current detection module 210 will during greater than a predetermined level, turn-off gate drivers 208 in the value of electric current 15, further end power metal-oxide semiconductor 16.Inductance 10 damage easily, so current detection module 210 will provide to inductance 10 mechanism of protection when electric current 15 is excessive.
Fig. 3 is the oscillogram of the voltage of dim signal 201, error signal 205, reference signal 207, comparative result 30, switching signal 13 and first node 11.As previously shown, dim signal 201 is square wave.And, will in pulse width modulation module 206, compare with the reference signal 207 that is produced by oscillating circuit 204, and produce comparative result 30 according to the error signal 205 that dim signal 201 produces.But control signal 203 make pulse width modulation module 206 and gate drivers 208, so that comparative result 30 transfers to power metal-oxide semiconductor 16, and can turn-off pulse width modulation module 206 and gate drivers 208, to stop above-mentioned transmission action.Therefore, after whether passing through through the control of control signal 203, comparative result 30 will become switching signal 13.Therefore electric capacity 14 will be recharged when power metal-oxide semiconductor 16 conducting, and further connect light emitting diode 12, and discharge when power metal-oxide semiconductor 16 cut-off, and further turn-off light emitting diode 12.Fig. 3 illustrates the charging current of first node 11.
At traditional on-off circuit, namely in the design of the drive circuit of light emitting diode, during the cycle, whole on-off circuit will be turn-offed, to turn-off light emitting diode at the electronegative potential of dim signal.Therefore, during the cycle, whole on-off circuit must restart, so that light emitting diode is charged at the high potential that enters dim signal.The start-up course of whole on-off circuit is very slow, particularly error amplifier and oscillating circuit, therefore for high-frequency dim signal, the time of charging shortens more, and so that not enough for the charge volume of light emitting diode, and then cause the deficiency of brightness.At the circuit of LED that embodiments of the invention disclose, only there are pulse width modulation module and gate drivers to be turned off during the cycle at the electronegative potential of dim signal.Therefore, error amplifier and oscillator during the cycle, will continue to supply error signal and reference signal at electronegative potential, to produce comparative result.The difference in high and low current potential cycle only is at high potential during the cycle that comparative result allows to export power metal-oxide semiconductor in the pulse width modulation module.Therefore, even in the situation of high frequency (surpass 30KHz), the action of on-off circuit still enough promptly provides light emitting diode to want to send the electric current of full brightness institute palpus again.
Although the present invention discloses as above with preferred embodiment; yet it is not to limit the present invention, any those skilled in the art, without departing from the spirit and scope of the present invention; can do various changes and retouching, so protection scope of the present invention is when with appended being as the criterion that claim was defined.

Claims (8)

1. circuit of LED comprises:
Inductance is electrically connected supply power supply and first node;
One group of light emitting diode, this group light emitting diode is electrically connected at this first node and earthing potential;
Electric capacity is electrically connected this first node and this earthing potential;
Power metal-oxide semiconductor, be electrically connected at this first node and this earthing potential, the grid receiving key signal of this power metal-oxide semiconductor wherein, so that this power metal-oxide semiconductor charges to this electric capacity when conducting, with this group light emitting diode of further connection, and this power metal-oxide semiconductor discharges this electric capacity when cut-off, with this group light emitting diode of further shutoff; And
On-off circuit for generation of this switching signal, comprises:
Control module has the dim signal in high potential cycle and electronegative potential cycle in order to reception, so that produce control signal according to this dim signal;
Error amplifier, this control module of process of exporting according to this control module produces error signal with the signal after this dim signal step-down; And
The pulse width modulation module, in order to relatively this error signal and reference signal, to produce comparative result, this control signal is controlled this pulse width modulation module, make this dim signal at this high potential during the cycle, this pulse width modulation module is connected, and this dim signal is at this electronegative potential during the cycle, this pulse width modulation module shuts down, wherein this switching signal at this high potential this power metal-oxide semiconductor of conducting during the cycle, and is ended this power metal-oxide semiconductor at this electronegative potential according to this comparative result during the cycle.
2. circuit of LED as claimed in claim 1, wherein this on-off circuit also comprises gate drivers, be electrically connected between this pulse width modulation module and this power metal-oxide semiconductor, to strengthen this switching signal to the driving force of this power metal-oxide semiconductor.
3. circuit of LED as claimed in claim 2, wherein this control signal is controlled this gate drivers, makes this control signal at this high potential during the cycle, and this gate drivers is connected, and this control signal is at this electronegative potential during the cycle, this gate drivers turn-offs.
4. circuit of LED as claimed in claim 1, wherein the frequency of this dim signal surpasses 30KHz.
5. circuit of LED as claimed in claim 2, wherein this on-off circuit also comprises current detection module, be electrically connected at this first node detecting the electric current of this power metal-oxide semiconductor, when the value of this electric current greater than predetermined level, this current detection module turn-offs this gate drivers.
6. circuit of LED as claimed in claim 1, wherein this on-off circuit also comprises oscillating circuit, so that produce this reference signal.
7. circuit of LED as claimed in claim 1, wherein this reference signal is sawtooth waveforms.
8. circuit of LED as claimed in claim 7, wherein when the value of this error signal greater than this reference signal, this comparative result is low-voltage output, and when the value of this error signal less than this reference signal, this comparative result is high voltage output.
CN200910003684XA 2009-01-19 2009-01-19 Light emitting diode circuit with high light-regulating frequency Active CN101784142B (en)

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Publication number Priority date Publication date Assignee Title
CN102905414B (en) * 2011-07-27 2016-04-20 富泰华工业(深圳)有限公司 Light-emitting device
CN104753483B (en) * 2013-12-30 2018-07-06 国民技术股份有限公司 Power amplifier and its gain-attenuation control circuitry
CN105282897A (en) * 2014-05-30 2016-01-27 神讯电脑(昆山)有限公司 Light-emitting diode driving circuit and driving method
CA2875705C (en) * 2014-12-23 2015-12-15 Ming Zheng Method and system for pulsing an led light source
CN104754832A (en) * 2015-03-30 2015-07-01 昂宝电子(上海)有限公司 Led drive circuit and led lamp

Citations (3)

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Publication number Priority date Publication date Assignee Title
CN101155449A (en) * 2006-09-25 2008-04-02 硕颉科技股份有限公司 Width pulse modulation device and its control circuit and method and method
CN101222800A (en) * 2007-01-12 2008-07-16 硕颉科技股份有限公司 Control circuit
CN101227780A (en) * 2008-01-28 2008-07-23 缪复华 LED lamp set drive power supply device

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Publication number Priority date Publication date Assignee Title
US7342577B2 (en) * 2005-01-25 2008-03-11 Honeywell International, Inc. Light emitting diode driving apparatus with high power and wide dimming range
US20080018261A1 (en) * 2006-05-01 2008-01-24 Kastner Mark A LED power supply with options for dimming
TW200816608A (en) * 2006-09-26 2008-04-01 Beyond Innovation Tech Co Ltd DC/DC converter

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Publication number Priority date Publication date Assignee Title
CN101155449A (en) * 2006-09-25 2008-04-02 硕颉科技股份有限公司 Width pulse modulation device and its control circuit and method and method
CN101222800A (en) * 2007-01-12 2008-07-16 硕颉科技股份有限公司 Control circuit
CN101227780A (en) * 2008-01-28 2008-07-23 缪复华 LED lamp set drive power supply device

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