CN101783506B - Detection and current-limiting protection circuit - Google Patents
Detection and current-limiting protection circuit Download PDFInfo
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- CN101783506B CN101783506B CN 200910189045 CN200910189045A CN101783506B CN 101783506 B CN101783506 B CN 101783506B CN 200910189045 CN200910189045 CN 200910189045 CN 200910189045 A CN200910189045 A CN 200910189045A CN 101783506 B CN101783506 B CN 101783506B
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Abstract
The invention relates to a detection and current-limiting protection circuit which is used for cutting off an MOS tube when the sampling current of a current sampling resistance is overlarge. The emitting electrodes of a second polar tube and a third polar tube are connected with the source electrode of the MOS tube, the base electrode and the collector electrode of the second polar tube and the third polar tube are connected with a power supply by a fourth resistance; the base electrodes of a first polar tube and the third tube are connected with the base electrodes of the second polar tube and the third polar tube, and the emitting electrodes of the first polar tube and the third tube are grounded by a first capacitance; the collector electrodes of the first polar tube and the third tube are connected with the grid electrode of the MOS tube by the first resistance; after a second resistance and a third resistance are connected in series, one end of the second resistance or the third resistance is connected with the power supply, and the other end or the third resistance or the second resistance is grounded; and the joint of the second resistance and the third resistance is connected with the emitting electrodes of the first polar tube and the third tube. When the technical scheme of the invention is implemented, the detection and current-limiting protection circuit has quick reaction, simple circuit, good operation reliability and low cost.
Description
Technical field
The present invention relates to circuit design field, more particularly, relate to detection and current-limiting protection circuit in a kind of power supply and the distribution product.
Background technology
In the circuit engineering field, circuit overcurrent protection be a kind of can be in the situation that the excessive a kind of circuit that whole circuit is protected of the electric current of flowing through.
As shown in Figure 1; this figure is the circuit theory diagrams of overcurrent protection common in the prior art; its operation principle is; by current sampling resistor R0 (also can be shunt) electric current is sampled; current value is converted to corresponding magnitude of voltage, because this original current sample magnitude of voltage is very little, needs by an amplifying circuit it to be amplified in the back; then send into comparison and protective circuit, relatively will make corresponding protection action according to the amplitude of this signal with protective circuit.In the time of the extreme cases such as generation overcurrent or port short circuit, the electric current that flows through metal-oxide-semiconductor S1 can be very large, metal-oxide-semiconductor need to be turn-offed fast, and guarantee metal-oxide-semiconductor S1 operates in the safety operation area, guarantees that metal-oxide-semiconductor S1 can not be damaged.And in circuit diagram shown in Figure 1; the current sample amplifying circuit generally is made of amplifier; can be amplifier with protective circuit relatively; also can be finished by DSP, CPLD or single-chip microcomputer; but no matter be any situation; be amplified to the comparison protective circuit from current sample and make the protection action, all can have certain time-delay, and in this section time-delay, be enough to damage metal-oxide-semiconductor S1.
Summary of the invention
The technical problem to be solved in the present invention is, has the defective of time-delay for the above-mentioned current foldback circuit of prior art, and a kind of willing detection and current-limiting protection circuit are provided.
The technical solution adopted for the present invention to solve the technical problems is: construct a kind of detection and current-limiting protection circuit, be used for when the sample rate current of current sampling resistor is excessive, turn-offing metal-oxide-semiconductor, described detection and current-limiting protection circuit comprise the first triode, the second triode, the first diode, the first electric capacity, the first resistance, the second resistance, the 3rd resistance and the 4th resistance, wherein, the emitter of the second triode connects the source electrode of described metal-oxide-semiconductor and the first end of described current sampling resistor, the second end ground connection of described current sampling resistor, the base stage of described the second triode are connected with collector electrode passes through the 4th resistance connection power supply; The base stage of described the first triode connects the base stage of described the second triode, the emitter of described the first triode is by the first capacity earth, the collector electrode of described the first triode connects the negative pole of described the first diode, and the positive pole of described the first diode connects the grid of metal-oxide-semiconductor by the first resistance; After described the second resistance and the series connection of described the 3rd resistance, a termination power, other end ground connection, and the joint of described the second resistance and described the 3rd resistance connects the emitter of described the first triode.
In detection of the present invention and current-limiting protection circuit, the resistance of described the second resistance is greater than the resistance of described the 3rd resistance.
In detection of the present invention and current-limiting protection circuit, described the first triode and described the second triode are the triode in the same encapsulation.
In detection of the present invention and current-limiting protection circuit, also comprise the second diode and the 3rd diode, the positive pole of described the second diode connects the emitter of described the first triode, and the negative pole of described the second diode connects the joint of described the second resistance and the 3rd resistance; The positive pole of described the 3rd diode connects the emitter of described the second triode, and its negative pole connects the source electrode of described metal-oxide-semiconductor.
In detection of the present invention and current-limiting protection circuit, described the second diode and described the 3rd diode are the diode in the same encapsulation.
In detection of the present invention and current-limiting protection circuit, also comprise the 4th diode, the positive pole of described the 4th diode connects the grid of described metal-oxide-semiconductor, and the negative pole of described the 4th diode connects the positive pole of described the first diode.
In detection of the present invention and current-limiting protection circuit, also comprise the second electric capacity, the emitter of described second triode of a termination of described the second electric capacity, the other end ground connection of described the second electric capacity.
Implement detection of the present invention and current-limiting protection circuit; need not the process that current sample amplifies; also need not again through relatively moving according to the current sample that amplifies with protective circuit; and only consist of around two triodes; therefore, circuit overcurrent protection of the present invention is swift in response, and circuit is simple; operational reliability is good, and is with low cost.
Description of drawings
The invention will be further described below in conjunction with drawings and Examples, in the accompanying drawing:
Fig. 1 is the circuit theory diagrams of prior art detection and current-limiting protection;
Fig. 2 is the schematic diagram that detection of the present invention and current-limiting protection circuit are used;
Fig. 3 is the circuit diagram of detection of the present invention and current-limiting protection circuit embodiment one;
Fig. 4 is the circuit diagram of detection of the present invention and current-limiting protection circuit embodiment two;
Fig. 5 is the circuit diagram of detection of the present invention and current-limiting protection circuit embodiment three;
Fig. 6 is the circuit diagram of detection of the present invention and current-limiting protection circuit embodiment four.
Embodiment
As shown in Figure 2, in the schematic diagram of detection of the present invention and current-limiting protection circuit application, when the circuit normal operation, when overcurrent or port short circuit namely do not occur, metal-oxide-semiconductor S1 conducting; In the time of the extreme cases such as circuit generation overcurrent or port short circuit; also can be shunt by current sampling resistor R0() electric current sharply increase; detect and the current-limiting protection circuit action; the grid voltage of metal-oxide-semiconductor S1 is dragged down rapidly; the electric current of current flowing sampling resistor is limited; guarantee that metal-oxide-semiconductor S1 is operated in the place of safety, can not be damaged.
In the detection of the present invention shown in Fig. 3 and current-limiting protection circuit embodiment one; this detection and current-limiting protection circuit comprise triode Q1; Q2; resistance R 1; R2; R3; R4; diode D1 and capacitor C 1; wherein; point Gate Control Signal connects the grid of metal-oxide-semiconductor S1; signal I(Shunt) is current sample voltage on the current sampling resistor R0; it is the source electrode that the emitter of triode Q2 meets metal-oxide-semiconductor S1; triode Q1; Q2 is the triode in the same encapsulation; and triode Q1; the base stage of Q2 connects; the base stage of triode Q2 and collector electrode all connect power supplys (VCC) by resistance R 4; the emitter of triode Q1 is by capacitor C 1 ground connection; its collector electrode connects the negative pole of diode D1; the positive pole of diode D1 is by resistance R 1 contact Gate Control Signal; resistance R 2 and R3 series connection; one termination power (VCC), other end ground connection, and the joint of its series connection connects the emitter of triode Q1.
In circuit diagram shown in Figure 3, when circuit works, point I(Shunt) magnitude of voltage is very little, the emitter voltage value that is triode Q2 is very little, the base voltage value of triode Q2 is also very little, because triode Q1, the base stage of Q2 links to each other, therefore, the base voltage value of triode Q1 is very little, and its emitter voltage value is very little, the magnitude of voltage that is resistance R 3 is very little, and (resistance of resistance R 2 is greater than the resistance of resistance R 3, the voltage of power supply VCC mostly is added on the resistance R 2), the electric current that flows through triode Q1 collector electrode is also very little, and is therefore very little to the voltage influence of Gate Control Signal, namely very little on the grid voltage impact of metal-oxide-semiconductor S1, metal-oxide-semiconductor S1 normally starts.When the extreme cases such as generation overcurrent or port short circuit, point I(Shunt) voltage sharply rises, triode Q1, the base voltage of Q2 also rises thereupon, for triode Q1, because the impact of capacitor C 1, its emitter voltage can not suddenly change, thereby the base stage of triode Q1 and the voltage between the emitter are sharply increased, therefore, the base current that flows through triode Q1 sharply increases, so that the electric current of its collector electrode also sharply increases, thereby the grid of metal-oxide-semiconductor S1 and the positive charge on the input capacitance between the source electrode are transferred rapidly, the grid of metal-oxide-semiconductor and the voltage between the source electrode are less than its cut-in voltage, thereby metal-oxide-semiconductor S1 turn-offs rapidly, guarantee that metal-oxide-semiconductor S1 always works in the place of safety.In the present embodiment; this crosses detection and current-limiting protection circuit only consists of around two triode Q1, Q2; first amplification sample rate current compared to existing technology; then relatively make the protection action with protective circuit according to the sample rate current that amplifies; detection of the present invention and current-limiting protection circuit reaction are rapider, and circuit is simple, reliable, with low cost.
In the detection of the present invention shown in Fig. 4 and current-limiting protection circuit embodiment two; same section among this detection and current-limiting protection circuit and the embodiment one shown in Figure 3 is not done at this and is given unnecessary details; in this embodiment; also comprise diode D2 and diode D3; wherein, the emitter of the anodal connecting triode Q1 of diode D2, the joint of its negative pole contact resistance R2 and R3; the emitter of the anodal connecting triode Q2 of diode D3, its negative contacts I(Shunt).Diode D2, D3 are used for when current sampling resistor generation open circuit fault, and the back-pressure of bearing between the base stage of triode Q1, Q2 and the emitter is unlikely to make triode to damage.PN junction and the temperature characterisitic of added two diode D2, D3 are consistent, and preferred two diode D2, D3 are the diode in the same encapsulation.
In the detection of the present invention shown in Fig. 5 and current-limiting protection circuit embodiment three; same section among this detection and current-limiting protection circuit and the embodiment one shown in Figure 3 is not done at this and is given unnecessary details; in this embodiment; also comprise diode D4; its anodal tie point Gate Control Signal; its negative pole connects the positive pole of diode D1; leakage current between the drain-source utmost point of metal-oxide-semiconductor S1 can flow to by diode D4 the collector electrode of triode Q1; further increase and flow through the electric current of triode Q1 collector electrode, thereby further accelerate the turn-off speed of metal-oxide-semiconductor S1.
In the detection of the present invention shown in Fig. 6 and current limliting mould protective circuit embodiment four; same section among this detection and current-limiting protection circuit and the embodiment one shown in Figure 3 is not done at this and is given unnecessary details; in this embodiment; this circuit also comprises capacitor C 2; one end tie point I(Shunt); other end ground connection, this capacitor C 2 is used for the vulnerability to jamming of intensifier circuit, the ability of intensifier circuit band capacitive load.
The above is the preferred embodiments of the present invention only, is not limited to the present invention, and for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any modification of doing, be equal to replacement, improvement etc., all should be included within the claim scope of the present invention.
Claims (7)
1. one kind is detected and current-limiting protection circuit, be used for when the sample rate current of current sampling resistor is excessive, turn-offing metal-oxide-semiconductor, it is characterized in that, described detection and current-limiting protection circuit comprise the first triode, the second triode, the first diode, the first electric capacity, the first resistance, the second resistance, the 3rd resistance and the 4th resistance, wherein, the emitter of the second triode connects the source electrode of described metal-oxide-semiconductor and the first end of described current sampling resistor, the second end ground connection of described current sampling resistor, the base stage of described the second triode are connected with collector electrode passes through the 4th resistance connection power supply; The base stage of described the first triode connects the base stage of described the second triode, the emitter of described the first triode is by the first capacity earth, the collector electrode of described the first triode connects the negative pole of described the first diode, and the positive pole of described the first diode connects the grid of metal-oxide-semiconductor by the first resistance; After described the second resistance and the series connection of described the 3rd resistance, a termination power, other end ground connection, and the joint of described the second resistance and described the 3rd resistance connects the emitter of described the first triode.
2. detection according to claim 1 and current-limiting protection circuit is characterized in that, the resistance of described the second resistance is greater than the resistance of described the 3rd resistance.
3. detection according to claim 1 and current-limiting protection circuit is characterized in that, described the first triode and described the second triode are the triode in the same encapsulation.
4. detection according to claim 1 and current-limiting protection circuit, it is characterized in that, also comprise the second diode and the 3rd diode, the positive pole of described the second diode connects the emitter of described the first triode, and the negative pole of described the second diode connects the joint of described the second resistance and the 3rd resistance; The positive pole of described the 3rd diode connects the emitter of described the second triode, and its negative pole connects the source electrode of described metal-oxide-semiconductor.
5. detection according to claim 4 and current-limiting protection circuit is characterized in that, described the second diode and described the 3rd diode are the diode in the same encapsulation.
6. detection according to claim 1 and current-limiting protection circuit is characterized in that, also comprise the 4th diode, and the positive pole of described the 4th diode connects the grid of described metal-oxide-semiconductor, and the negative pole of described the 4th diode connects the positive pole of described the first diode.
7. detection according to claim 1 and current-limiting protection circuit is characterized in that, also comprise the second electric capacity, the emitter of described second triode of a termination of described the second electric capacity, the other end ground connection of described the second electric capacity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910189045 CN101783506B (en) | 2009-12-16 | 2009-12-16 | Detection and current-limiting protection circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910189045 CN101783506B (en) | 2009-12-16 | 2009-12-16 | Detection and current-limiting protection circuit |
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| Publication Number | Publication Date |
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| CN101783506A CN101783506A (en) | 2010-07-21 |
| CN101783506B true CN101783506B (en) | 2013-01-16 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 200910189045 Active CN101783506B (en) | 2009-12-16 | 2009-12-16 | Detection and current-limiting protection circuit |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019047079A1 (en) * | 2017-09-06 | 2019-03-14 | 深圳和而泰智能控制股份有限公司 | Power switching component overcurrent protection circuit, motor driving system, and motor system |
| CN108963999B (en) * | 2018-08-07 | 2020-02-14 | 中国航空工业集团公司雷华电子技术研究所 | Surge current suppressor |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4047054A (en) * | 1976-08-23 | 1977-09-06 | Rca Corporation | Thyristor switching circuit |
| US6831447B1 (en) * | 2003-05-20 | 2004-12-14 | Itt Manufacturing Enterprises, Inc. | Surge limiting circuit with optional short circuit detection |
| CN201001030Y (en) * | 2007-01-15 | 2008-01-02 | 无锡硅动力微电子股份有限公司 | Current-limiting protection switch |
| CN201332262Y (en) * | 2008-09-04 | 2009-10-21 | 深圳市东辰科技有限公司 | Current-limiting protection circuit |
-
2009
- 2009-12-16 CN CN 200910189045 patent/CN101783506B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4047054A (en) * | 1976-08-23 | 1977-09-06 | Rca Corporation | Thyristor switching circuit |
| US6831447B1 (en) * | 2003-05-20 | 2004-12-14 | Itt Manufacturing Enterprises, Inc. | Surge limiting circuit with optional short circuit detection |
| CN201001030Y (en) * | 2007-01-15 | 2008-01-02 | 无锡硅动力微电子股份有限公司 | Current-limiting protection switch |
| CN201332262Y (en) * | 2008-09-04 | 2009-10-21 | 深圳市东辰科技有限公司 | Current-limiting protection circuit |
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| CN101783506A (en) | 2010-07-21 |
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Owner name: YADA POWER SUPPLY PRODUCTS (SHENZHEN) CO., LTD. Free format text: FORMER OWNER: AIMOSHENG NETWORK ENERGY SOURCE CO LTD Effective date: 20140904 |
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Free format text: CORRECT: ADDRESS; FROM: 518057 SHENZHEN, GUANGDONG PROVINCE TO: 518101 SHENZHEN, GUANGDONG PROVINCE |
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Effective date of registration: 20140904 Address after: 518101 Guangdong city of Shenzhen province Baoan District Xin'an road two North 68 Street office Honglang District Industrial Park plant Patentee after: Astec power supply (Shenzhen) Co., Ltd. Address before: 518057 Nanshan District science and Technology Industrial Park, Guangdong, Shenzhen Branch Road, No. Patentee before: Aimosheng Network Energy Source Co., Ltd. |