CN101781116A - BaO-TiO2-Nb2O5 ternary system low-temperature sintering microwave dielectric ceramic material and preparation method - Google Patents

BaO-TiO2-Nb2O5 ternary system low-temperature sintering microwave dielectric ceramic material and preparation method Download PDF

Info

Publication number
CN101781116A
CN101781116A CN201010045612A CN201010045612A CN101781116A CN 101781116 A CN101781116 A CN 101781116A CN 201010045612 A CN201010045612 A CN 201010045612A CN 201010045612 A CN201010045612 A CN 201010045612A CN 101781116 A CN101781116 A CN 101781116A
Authority
CN
China
Prior art keywords
powder
temperature
microwave dielectric
dielectric ceramic
low
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201010045612A
Other languages
Chinese (zh)
Inventor
周焕福
陈秀丽
方亮
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Guilin University of Technology
Original Assignee
Guilin University of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Guilin University of Technology filed Critical Guilin University of Technology
Priority to CN201010045612A priority Critical patent/CN101781116A/en
Publication of CN101781116A publication Critical patent/CN101781116A/en
Pending legal-status Critical Current

Links

Images

Landscapes

  • Inorganic Insulating Materials (AREA)

Abstract

The invention discloses a BaO-TiO2-Nb2O5 ternary system low-temperature sintering microwave dielectric ceramic material and a preparation method. The material can be prepared by the traditional solid phase sintering of 95-98 percent by weight of Ba2Ti3Nb4O18 and 2-5 percent by weight of glass phase. The material has low sintering temperature (ceramic can be sintered to below 900 DEG C), can be subjected to co-firing compatibility with a silver electrode and has stable process, good repeatability and better microwave dielectric property when sintering at 900 DEG C, wherein epsilonr=29-37, Q*f is larger than 12,000 GHz, and tauf=-15-18ppm/DEG C. The material is the low-temperature sintering microwave dielectric ceramic material with great application potential and can be used for the manufacture of microwave devices of a low-temperature co-firing ceramic system (LTCC), a multi-layer dielectric resonator, a microwave antenna, a filter and the like.

Description

BaO-TiO 2-Nb 2O 5Ternary system low-temperature sintering microwave medium ceramic material and preparation method
Technical field
The invention belongs to electronic ceramics and manufacturing field thereof, relate to a kind of new microwave dielectric ceramic materials, especially a kind of low-temperature sintered microwave dielectric ceramic material and preparation method.
Background technology
Along with electronic information technology constantly develops to high frequencyization and digitizing direction,, integrated so that modular requirement is also more and more urgent to the miniaturization of components and parts.LTCC LTCC (Low TemperatureCo-fired Ceramics) with its excellent electricity, machinery, calorifics and operational characteristic, has become one of major technique of electronic-component moduleization.The common burning temperature of LTCC system (LTCC) is generally between 800 ℃～950 ℃.Because sintering temperature is low, the low metal of available resistivity is as the conductor material of multilayer wiring, can improve packing density, signaling rate, and can in be embedded in the various laminar microwave electronic devices of multilager base plate once-firing, therefore extensively be used in high-speed and high-density and interconnect among the polynary ceramic component (MCM).Because burning technology has the packing density height altogether, dielectric loss is low, can be used for high microwave frequency band, characteristics such as monolithic structure high reliability and IC heat match, therefore extremely wide application prospect is arranged, wherein first-elected again LTCC technology because it not only sintering temperature is low, but also be to adopt the metal electrode Au of high conductivity, Ag, Cu etc., wiring good conductivity, and with the Cu electrode time, cost also can be very low.
Though the microwave dielectric material of most of commercializations has excellent microwave dielectric property, sintering temperature height (general 〉=1300 ℃) therefore for compatible mutually with LTCC technology, must reduce the sintering temperature of material.Usually the method that reduces the sintering temperature of microwave dielectric material has the oxide compound of interpolation or low melting glass sintering aid, introduce chemical synthesis process, and superfine powder is made raw material etc.Synthetic and the superfine powder of chemical process is made raw material and can be caused complex technical process, and manufacturing cost and cycle can rise.Comparatively speaking, add an amount of low melting point oxide or glassy phase, though may cause the decline of a little microwave dielectric property, its technology is simple, is easy to the material mass production.
1997, people such as Robert s [1]At BaO-TiO 2-Nb 2O 5Reported the dielectric properties of a series of compounds in the system, in these systems, BaTiNb 4O 13, BaTi 3Nb 4O 17And Ba 3Ti 5Nb 6O 28Because having excellent microwave dielectric property by extensive concern [2-3]2008, people such as Zou [4]At first reported Ba 2Ti 3Nb 4O 18Microwave-medium ceramics, this system sintering temperature is～1300 ℃, the microwave property excellence, but for the LTCC low-temperature sintering, its sintering temperature height can't be realized the common burning with silver.Therefore, in order to realize the common burning of this material and Ag electrode, must reduce its sintering temperature.
Relevant references: [1] G.L.Roberts, R.J.Cava, Dielectric properties ofbarium titanium niobates, J.Mater.Res.12 (1997) 526-530.[2] R.Ratheesh, H.Sreemoolanadhan, New highpermittivity and low loss ceramics in the BaO-TiO 2-Nb 2O 5Composition, J.Mater.Sci.Mater.Electr.9 (1998) 291-294.[3] M.T.Sebastian, New lowloss microwave dielectric ceramics in the BaO-TiO 2-Nb 2O 5/ Ta 2O 5System, J.Mater.Sci.Mater.Electr.10 (1999) 475-478.[4] D.Guo, Z.Ling, X.Hu, Tempera ture coefficient-adjustable dielectric ceramics near the nominalcomposition Ba 2Ti 3Nb 4O 18, Ceram.Int.34 (2008) 1931-1934.
Summary of the invention
The objective of the invention is to overcome the shortcoming of above-mentioned current material, a kind of low-temperature sintered microwave dielectric ceramic material and preparation method thereof is provided, this low-temperature sintered microwave dielectric ceramic material is from the low temperature co-fired angle of LTCC, at BaO-TiO 2-Nb 2O 5By a spot of low melting glass phase of mixing, its sintering temperature can successfully be reduced to about 900 ℃ in the system, keeps excellent microwave property simultaneously.
Low-temperature sintered microwave dielectric ceramic material of the present invention is 95～98% Ba by weight percent 2Ti 3Nb 4O 18With weight percent be that 2～5% glassy phase is formed.
The step for preparing above-mentioned low-temperature sintered microwave dielectric ceramic material is as follows:
1) at first with BaCO 3, TiO 2And Nb 2O 5Press BaCO 3: TiO 2: Nb 2O 5=2: be mixed with main powder at 3: 2;
2) the main powder that will prepare then mixes, according to the weight ratio of main powder and alcohol is to main powder in to add alcohol at 1: 1, adopt wet milling process to mix 4～8 hours, take out the back 120～140 ℃ of oven dry down, sieve with 80 purpose screen clothes, be pressed into bulk after sieving, the block main powder that will suppress with the temperature rise rate of 5～8 ℃/min rises to 1000 ℃～1200 ℃ and be incubated 2～6h under this temperature by room temperature then, make the burning piece, promptly synthetic principal crystalline phase;
3) the above-mentioned burning piece of making is pulverized, carry out 4～5 hours secondary ball milling, adding weight percent in oven dry back is 2～5% glassy phase, be made into powder, according to the weight ratio of powder and alcohol is to powder in to add alcohol at 1: 1, ball milling took out after 4～8 hours, put into baker 120～140 ℃ of oven dry down, be pressed into sequin after the granulation, in 500～600 ℃ of binder removals, obtain porcelain behind the furnace cooling, again porcelain can be obtained this low-temperature sintered microwave dielectric ceramic material at 850～950 ℃ of following sintering 2～4h.
The present invention is with Ba 2Ti 3Nb 4O 18Series microwave dielectric ceramic is the basis, adopts homemade low melting glass as sintering aid, successfully its sintering temperature is reduced to about 900 ℃, keeps excellent microwave property simultaneously.Material after the cooling can burn compatibility altogether with silver electrode.This low-temperature sintered microwave dielectric ceramic material chemical constitution and preparation technology are all fairly simple, can be widely used in the manufacturing of microwave devices such as LTCC system (LTCC), multilayered medium resonator, microwave antenna, wave filter.
Description of drawings
Fig. 1 burns match map altogether for the embodiment of the invention 3 and Ag electrode.
Fig. 2 burns match map altogether for the embodiment of the invention 5 and Ag electrode.
Fig. 3 burns match map altogether for the embodiment of the invention 9 and Ag electrode.
Embodiment
The present invention is with analytically pure BaCO 3And Nb 2O 5, chemical pure TiO 2Be main raw material.Elder generation is BaCO in molar ratio 3: TiO 2: Nb 2O 5=2: 3: 2, synthetic in advance main powder then added a certain proportion of low melting glass phase in main powder, can obtain low-temperature sintered microwave dielectric ceramic material behind granulation, compressing tablet, the sintering.For low glassy phase, then be that various low melting point oxides are melted quenching (Li in back by glassy phase proportion ingredient mixing post-heating to certain temperature 2O-ZnO-B 2O 3The quenching temperature of glassy phase is 1000 ℃, ZnO-B 2O 3-SiO 2The quenching temperature of glassy phase is 1100 ℃), get by the high-energy ball milling pulverizing then.
Below in conjunction with embodiment the present invention is further described:
Embodiment 1:
1) at first with chemical feedstocks BaCO 3, TiO 2And Nb 2O 5BaCO in molar ratio 3: TiO 2: Nb 2O 5=2: be mixed with main powder at 3: 2;
2) the main powder that will prepare then mixes, according to the mass ratio of main powder and alcohol is to main powder in to add alcohol at 1: 1, adopt wet milling process to mix 4 hours, levigate back is 130 ℃ of oven dry down, sieve with 80 purpose screen clothes, be pressed into bulk after sieving, the block raw material that will suppress with the temperature rise rate of 5 ℃/min rises to 1150 ℃ and be incubated 4h under this temperature by room temperature then, makes the burning piece;
3) the above-mentioned burning piece made is pulverized, carried out 4 hours secondary ball milling, put into baker oven dry back adding weight percent and be 2% Li 2O-ZnO-B 2O 3(Li 2O: ZnO: B 2O 3=2: 3: 2.5) glassy phase, be made into powder, according to the mass ratio of powder and alcohol is to powder in to add alcohol at 1: 1, putting into nylon jar ball milling took out after 4 hours, put into baker 130 ℃ of oven dry down, be pressed into sequin after the granulation, in 550 ℃ of binder removals, obtain porcelain behind the furnace cooling, again porcelain can be obtained low-temperature sintered microwave dielectric ceramic material at 950 ℃ of following sintering 2h.The microwave property of this material is: ε r=33.4, Q * f=21300GHz, τ f=-6.1ppm/ ℃.
Embodiment 2:
1) at first with chemical feedstocks BaCO 3, TiO 2And Nb 2O 5BaCO in molar ratio 3: TiO 2: Nb 2O 5=2: be mixed with main powder at 3: 2;
2) the main powder that will prepare then mixes, according to the mass ratio of main powder and alcohol is to main powder in to add alcohol at 1: 1, adopt wet milling process to mix 4 hours, levigate back is 130 ℃ of oven dry down, sieve with 80 purpose screen clothes, be pressed into bulk after sieving, the block raw material that will suppress with the temperature rise rate of 5 ℃/min rises to 1150 ℃ and be incubated 4h under this temperature by room temperature then, makes the burning piece;
3) the above-mentioned burning piece made is pulverized, carried out 4 hours secondary ball milling, put into baker oven dry back adding weight percent and be 3% Li 2O-ZnO-B 2O 3(Li 2O: ZnO: B 2O 3=2: 3: 2.5) glassy phase, be made into powder, according to the mass ratio of powder and alcohol is to powder in to add alcohol at 1: 1, putting into nylon jar ball milling took out after 4 hours, put into baker 130 ℃ of oven dry down, be pressed into sequin after the granulation, in 550 ℃ of binder removals, obtain porcelain behind the furnace cooling, again porcelain can be obtained low-temperature sintered microwave dielectric ceramic material at 900 ℃ of following sintering 2h.The microwave property of this material is: ε r=31.5, Q * f=18450GHz, τ f=-5.9ppm/ ℃.
Embodiment 3:
1) at first with chemical feedstocks BaCO 3, TiO 2And Nb 2O 5BaCO in molar ratio 3: TiO 2: Nb 2O 5=2: be mixed with main powder at 3: 2;
2) the main powder that will prepare then mixes, according to the mass ratio of main powder and alcohol is to main powder in to add alcohol at 1: 1, adopt wet milling process to mix 4 hours, levigate back is 135 ℃ of oven dry down, sieve with 80 purpose screen clothes, be pressed into bulk after sieving, the block raw material that will suppress with the temperature rise rate of 5 ℃/min rises to 1150 ℃ and be incubated 4h under this temperature by room temperature then, makes the burning piece;
3) the above-mentioned burning piece made is pulverized, carried out 4 hours secondary ball milling, put into baker oven dry back adding weight percent and be 5% Li 2O-ZnO-B 2O 3(Li 2O: ZnO: B 2O 3=2: 3: 2.5) glassy phase, be made into powder, according to the mass ratio of powder and alcohol is to powder in to add alcohol at 1: 1, putting into nylon jar ball milling took out after 4 hours, put into baker 135 ℃ of oven dry down, be pressed into sequin after the granulation, in 550 ℃ of binder removals, obtain porcelain behind the furnace cooling, again porcelain can be obtained low-temperature sintered microwave dielectric ceramic material at 900 ℃ of following sintering 2h.The microwave property of this material is: ε r=32.4, Q * f=15000GHz, τ f=-5ppm/ ℃.Prescription after this cooling can be realized common burning coupling (as Fig. 1) well with the Ag powder, illustrates that this prescription is a selected material of good LTCC.
Embodiment 4:
1) at first with chemical feedstocks BaCO 3, TiO 2And Nb 2O 5BaCO in molar ratio 3: TiO 2: Nb 2O 5=2: be mixed with main powder at 3: 2;
2) the main powder that will prepare then mixes, according to the mass ratio of main powder and alcohol is to main powder in to add alcohol at 1: 1, adopt wet milling process to mix 4 hours, levigate back is 135 ℃ of oven dry down, sieve with 80 purpose screen clothes, be pressed into bulk after sieving, the block raw material that will suppress with the temperature rise rate of 5 ℃/min rises to 1150 ℃ and be incubated 4h under this temperature by room temperature then, makes the burning piece;
3) the above-mentioned burning piece made is pulverized, carried out 4 hours secondary ball milling, put into baker oven dry back adding weight percent and be 2% Li 2O-ZnO-B 2O 3(Li 2O: ZnO: B 2O 3=3: 3: 2) glassy phase, be made into powder, according to the mass ratio of powder and alcohol is to powder in to add alcohol at 1: 1, putting into nylon jar ball milling took out after 4 hours, put into baker 135 ℃ of oven dry down, be pressed into sequin after the granulation, in 550 ℃ of binder removals, obtain porcelain behind the furnace cooling, again porcelain can be obtained low-temperature sintered microwave dielectric ceramic material at 900 ℃ of following sintering 2h.The microwave property of this material is: ε r=33.2, Q * f=16000GHz, τ f=-6.36ppm/ ℃.
Embodiment 5:
1) at first with chemical feedstocks BaCO 3, TiO 2And Nb 2O 5BaCO in molar ratio 3: TiO 2: Nb 2O 5=2: be mixed with main powder at 3: 2;
2) the main powder that will prepare then mixes, according to the mass ratio of main powder and alcohol is to main powder in to add alcohol at 1: 1, adopt wet milling process to mix 4 hours, levigate back is 135 ℃ of oven dry down, sieve with 80 purpose screen clothes, be pressed into bulk after sieving, the block raw material that will suppress with the temperature rise rate of 5 ℃/min rises to 1150 ℃ and be incubated 4h under this temperature by room temperature then, makes the burning piece;
3) the above-mentioned burning piece made is pulverized, carried out 4 hours secondary ball milling, put into baker oven dry back adding weight percent and be 3% Li 2O-ZnO-B 2O 3(Li 2O: ZnO: B 2O 3=3: 3: 2) glassy phase, be made into powder, according to the mass ratio of powder and alcohol is to powder in to add alcohol at 1: 1, putting into nylon jar ball milling took out after 4 hours, put into baker 135 ℃ of oven dry down, be pressed into sequin after the granulation, in 550 ℃ of binder removals, obtain porcelain behind the furnace cooling, again porcelain can be obtained low-temperature sintered microwave dielectric ceramic material at 900 ℃ of following sintering 2h.The microwave property of this material is: ε r=32.9, Q * f=15260GHz, τ f=-9.27ppm/ ℃.Prescription after this cooling can be realized common burning coupling (as Fig. 2) well with the Ag powder, illustrates that this prescription is a selected material of good LTCC.
Embodiment 6:
1) at first with chemical feedstocks BaCO 3, TiO 2And Nb 2O 5BaCO in molar ratio 3: TiO 2: Nb 2O 5=2: be mixed with main powder at 3: 2;
2) the main powder that will prepare then mixes, according to the mass ratio of main powder and alcohol is to main powder in to add alcohol at 1: 1, adopt wet milling process to mix 4 hours, levigate back is 135 ℃ of oven dry down, sieve with 80 purpose screen clothes, be pressed into bulk after sieving, the block raw material that will suppress with the temperature rise rate of 5 ℃/min rises to 1150 ℃ and be incubated 4h under this temperature by room temperature then, makes the burning piece;
3) the above-mentioned burning piece made is pulverized, carried out 4 hours secondary ball milling, put into baker oven dry back adding weight percent and be 5% Li 2O-ZnO-B 2O 3(Li 2O: ZnO: B 2O 3=3: 3: 2) glassy phase, be made into powder, according to the mass ratio of powder and alcohol is to powder in to add alcohol at 1: 1, putting into nylon jar ball milling took out after 4 hours, put into baker 135 ℃ of oven dry down, be pressed into sequin after the granulation, in 550 ℃ of binder removals, obtain porcelain behind the furnace cooling, again porcelain can be obtained low-temperature sintered microwave dielectric ceramic material at 900 ℃ of following sintering 2h.The microwave property of this material is: ε r=31.7, Q * f=13300GHz, τ f=-10.28ppm/ ℃.
Embodiment 7:
1) at first with chemical feedstocks BaCO 3, TiO 2And Nb 2O 5BaCO in molar ratio 3: TiO 2: Nb 2O 5=2: be mixed with main powder at 3: 2;
2) the main powder that will prepare then mixes, according to the mass ratio of main powder and alcohol is to main powder in to add alcohol at 1: 1, adopt wet milling process to mix 4 hours, levigate back is 140 ℃ of oven dry down, sieve with 80 purpose screen clothes, be pressed into bulk after sieving, the block raw material that will suppress with the temperature rise rate of 5 ℃/min rises to 1150 ℃ and be incubated 4h under this temperature by room temperature then, makes the burning piece;
3) the above-mentioned burning piece made is pulverized, carried out 4 hours secondary ball milling, put into baker oven dry back adding weight percent and be 2% ZnO-B 2O 3-SiO 2(ZnO: B 2O 3: SiO 2=40: 35: 25) glassy phase, be made into powder, according to the mass ratio of powder and alcohol is to powder in to add alcohol at 1: 1, putting into nylon jar ball milling took out after 4 hours, put into baker 140 ℃ of oven dry down, be pressed into sequin after the granulation, in 550 ℃ of binder removals, obtain porcelain behind the furnace cooling, again porcelain can be obtained low-temperature sintered microwave dielectric ceramic material at 950 ℃ of following sintering 2h.The microwave property of this material is: ε r=34.3, Q * f=14500GHz, τ f=-8ppm/ ℃.
Embodiment 8
1) at first with chemical feedstocks BaCO 3, TiO 2And Nb 2O 5BaCO in molar ratio 3: TiO 2: Nb 2O 5=2: be mixed with main powder at 3: 2;
2) the main powder that will prepare then mixes, according to the mass ratio of main powder and alcohol is to main powder in to add alcohol at 1: 1, adopt wet milling process to mix 4 hours, levigate back is 140 ℃ of oven dry down, sieve with 80 purpose screen clothes, be pressed into bulk after sieving, the block raw material that will suppress with the temperature rise rate of 5 ℃/min rises to 1150 ℃ and be incubated 4h under this temperature by room temperature then, makes the burning piece;
3) the above-mentioned burning piece made is pulverized, carried out 4 hours secondary ball milling, put into baker oven dry back adding weight percent and be 3% ZnO-B 2O 3-SiO 2(ZnO: B 2O 3: SiO 2=40: 35: 25) glassy phase, be made into powder, according to the mass ratio of powder and alcohol is to powder in to add alcohol at 1: 1, putting into nylon jar ball milling took out after 4 hours, put into baker 140 ℃ of oven dry down, be pressed into sequin after the granulation, in 600 ℃ of binder removals, obtain porcelain behind the furnace cooling, again porcelain can be obtained low-temperature sintered microwave dielectric ceramic material at 900 ℃ of following sintering 2h.The microwave property of this material is: ε r=29.8, Q * f=12560GHz, τ f=-10ppm/ ℃.
Embodiment 9
1) at first with chemical feedstocks BaCO 3, TiO 2And Nb 2O 5BaCO in molar ratio 3: TiO 2: Nb 2O 5=2: be mixed with main powder at 3: 2;
2) the main powder that will prepare then mixes, according to the mass ratio of main powder and alcohol is to main powder in to add alcohol at 1: 1, adopt wet milling process to mix 4 hours, levigate back is 140 ℃ of oven dry down, sieve with 80 purpose screen clothes, be pressed into bulk after sieving, the block raw material that will suppress with the temperature rise rate of 5 ℃/min rises to 1150 ℃ and be incubated 4h under this temperature by room temperature then, makes the burning piece;
3) the above-mentioned burning piece made is pulverized, carried out 4 hours secondary ball milling, put into baker oven dry back adding weight percent and be 5% ZnO-B 2O 3-SiO 2(ZnO: B 2O 3: SiO 2=40: 35: 25) glassy phase, be made into powder, according to the mass ratio of powder and alcohol is to powder in to add alcohol at 1: 1, putting into nylon jar ball milling took out after 4 hours, put into baker 140 ℃ of oven dry down, be pressed into sequin after the granulation, in 600 ℃ of binder removals, obtain porcelain behind the furnace cooling, again porcelain can be obtained low-temperature sintered microwave dielectric ceramic material at 900 ℃ of following sintering 2h.The microwave property of this material is: ε r=30.2, Q * f=11500GHz, τ f=-15ppm/ ℃.Prescription after this cooling can be realized common burning coupling (as Fig. 3) well with the Ag powder, illustrates that this prescription is a selected material of good LTCC.
It is pointed out that according to technical scheme of the present invention, the foregoing description can also be enumerated many, prove,, all can reach purpose of the present invention in the scope that claims of the present invention proposed according to applicant's lot of experiment results.

Claims (2)

1. a low-temperature sintered microwave dielectric ceramic material is characterized in that described microwave dielectric ceramic materials is 95～98% Ba by weight percent 2Ti 3Nb 4O 18With weight percent be that 2～5% glassy phase is formed.
2. the preparation method of microwave dielectric ceramic materials as claimed in claim 1 is characterized in that concrete steps are:
(1) at first with BaCO 3, TiO 2And Nb 2O 5Press BaCO 3: TiO 2: Nb 2O 5=2: be mixed with main powder at 3: 2;
(2) the main powder that will prepare then mixes, according to the weight ratio of main powder and alcohol is to main powder in to add alcohol at 1: 1, adopt wet milling process to mix 4～8 hours, take out the back 120～140 ℃ of oven dry down, sieve with 80 purpose screen clothes, be pressed into bulk after sieving, the block main powder that will suppress with the temperature rise rate of 5～8 ℃/min rises to 1000 ℃～1200 ℃ and be incubated 2～6h under this temperature by room temperature then, make the burning piece, promptly synthetic principal crystalline phase;
(3) the above-mentioned burning piece of making is pulverized, carry out 4～5 hours secondary ball milling, adding weight percent in oven dry back is 2～5% glassy phase, be made into powder, according to the weight ratio of powder and alcohol is to powder in to add alcohol at 1: 1, ball milling took out after 4～8 hours, put into baking oven 120～140 ℃ of oven dry down, be pressed into sequin after the granulation, and be placed in the stove in 500～600 ℃ of binder removals, obtain green compact behind the furnace cooling, again green compact can be obtained low-temperature sintered microwave dielectric ceramic material at 850～950 ℃ of following sintering 2～4h.
CN201010045612A 2010-01-02 2010-01-02 BaO-TiO2-Nb2O5 ternary system low-temperature sintering microwave dielectric ceramic material and preparation method Pending CN101781116A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201010045612A CN101781116A (en) 2010-01-02 2010-01-02 BaO-TiO2-Nb2O5 ternary system low-temperature sintering microwave dielectric ceramic material and preparation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201010045612A CN101781116A (en) 2010-01-02 2010-01-02 BaO-TiO2-Nb2O5 ternary system low-temperature sintering microwave dielectric ceramic material and preparation method

Publications (1)

Publication Number Publication Date
CN101781116A true CN101781116A (en) 2010-07-21

Family

ID=42521284

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201010045612A Pending CN101781116A (en) 2010-01-02 2010-01-02 BaO-TiO2-Nb2O5 ternary system low-temperature sintering microwave dielectric ceramic material and preparation method

Country Status (1)

Country Link
CN (1) CN101781116A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102381874A (en) * 2011-07-29 2012-03-21 桂林电子科技大学 Low temperature co-fired microwave dielectric ceramic material and preparation method thereof
CN104016664A (en) * 2013-02-28 2014-09-03 云南银峰新材料有限公司 Preparation method of low-dielectric-constant microwave ceramic material
CN106478096A (en) * 2015-08-31 2017-03-08 中国民航大学 A kind of rare earth base novel non-full of type tungsten bronze ferroelectric material and preparation method thereof
CN109467432A (en) * 2018-12-14 2019-03-15 电子科技大学 A kind of Mg-Ti-Ta base microwave medium ceramic material and preparation method thereof
CN111233460A (en) * 2020-01-19 2020-06-05 深圳振华富电子有限公司 Microwave dielectric ceramic material and preparation method thereof

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102381874A (en) * 2011-07-29 2012-03-21 桂林电子科技大学 Low temperature co-fired microwave dielectric ceramic material and preparation method thereof
CN104016664A (en) * 2013-02-28 2014-09-03 云南银峰新材料有限公司 Preparation method of low-dielectric-constant microwave ceramic material
CN106478096A (en) * 2015-08-31 2017-03-08 中国民航大学 A kind of rare earth base novel non-full of type tungsten bronze ferroelectric material and preparation method thereof
CN109467432A (en) * 2018-12-14 2019-03-15 电子科技大学 A kind of Mg-Ti-Ta base microwave medium ceramic material and preparation method thereof
CN109467432B (en) * 2018-12-14 2021-03-30 电子科技大学 Mg-Ti-Ta-based microwave dielectric ceramic material and preparation method thereof
CN111233460A (en) * 2020-01-19 2020-06-05 深圳振华富电子有限公司 Microwave dielectric ceramic material and preparation method thereof
CN111233460B (en) * 2020-01-19 2022-04-19 深圳振华富电子有限公司 Microwave dielectric ceramic material and preparation method thereof

Similar Documents

Publication Publication Date Title
CN101786875B (en) Microwave medium ceramic material with low-temperature sintering spinel structure and preparation method thereof
CN101462874B (en) Low temperature sintering middle-dielectric constant microwave-medium ceramic material and preparation method thereof
CN101913859B (en) Li2Zn3Ti4O12 microwave dielectric ceramic material and low temperature sintering method thereof
CN101870584B (en) Preparation method of molybdenum-based ultralow-temperature sintering microwave medium ceramic materials
CN100575301C (en) A kind of low sintering composite microwave medium ceramic in series of lithium, niobium and titanium and preparation method thereof
CN103030394B (en) V-based low temperature sintering microwave medium ceramic material and preparation method thereof
CN107986774B (en) Low-temperature sintered high-dielectric-constant microwave dielectric ceramic material and preparation method thereof
CN103896579B (en) A kind of low temperature sintering lithium-base microwave dielectric ceramic material and preparation method thereof
CN102795852A (en) Novel LTCC low-frequency dielectric ceramic capacitor material
CN101781116A (en) BaO-TiO2-Nb2O5 ternary system low-temperature sintering microwave dielectric ceramic material and preparation method
CN1970496A (en) Electric dielectric ceramic and its production method
JP2000044341A (en) Dielectric ceramic composition
CN101092300A (en) Dielectric adjustable material of ceramics burned together at low temperature, and preparation method
CN100519472C (en) Dielectric porcelain composition and method for production thereof
CN101798220A (en) Tungstate low-temperature sintered microwave dielectric ceramic material and preparation method thereof
CN101172853A (en) Porcelain material for temperature stabilization X9R type multilayer ceramic capacitor and method for producing the same
KR100567632B1 (en) Dielectric compositions for firing at low temperatures and electronic parts
CN108218406A (en) Low-temperature co-burning ceramic material of low dielectric constant and low loss and preparation method thereof
CN104387057B (en) A kind of temperature-stable titanio spinelle microwave-medium ceramics and low temperature preparation method thereof
JP4613826B2 (en) Ceramic substrate composition, ceramic substrate, method for producing ceramic substrate, and glass composition
CN104671775A (en) LTCC (Low Temperature Co-Fired Ceramic) material having Ba-Nd-Ti system and preparation method
CN101891461B (en) Ternary microwave medium material of Li2O-CoO2-TiO2 and low temperature sintering method
JP2003146743A (en) Dielectric ceramic composition
JP3838541B2 (en) Low-temperature fired porcelain and electronic components
CN101671169B (en) Low temperature sintering microwave medium ceramic material and preparation method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C12 Rejection of a patent application after its publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20100721