CN101776750B - Integrated high-sensitivity millimeter wave receiver for millimeter wave array imaging system - Google Patents
Integrated high-sensitivity millimeter wave receiver for millimeter wave array imaging system Download PDFInfo
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- CN101776750B CN101776750B CN2010101092820A CN201010109282A CN101776750B CN 101776750 B CN101776750 B CN 101776750B CN 2010101092820 A CN2010101092820 A CN 2010101092820A CN 201010109282 A CN201010109282 A CN 201010109282A CN 101776750 B CN101776750 B CN 101776750B
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Abstract
The invention provides an integrated high-sensitivity millimeter wave receiver for a millimeter wave array imaging system, which comprises a plate body with a hole body, an integrated RF circuit fixed on one side of the plate body, a power supply circuit fixed on the other side of the plate body, and two packaging cover bodies; the integrated RF circuit further comprises a plane micro strip slot antenna used to receive millimeter wave, a low-noise amplifier used to amplify the accessed millimeter wave, and a mixed and integrated diode detector used to convert the amplified millimeter wave into low-frequency voltage signals which are in direct proportion to the power; the power supply circuit is connected with the integrated RF circuit through the hole body, and is used to supply power to the RF circuit; and the two packaging cover bodies are used to clamp the plate body for packaging. The compact structure can effectively overcome large size, poor stability and other defects, greatly reduces the size and the weight of the millimeter wave receiver, improves the performance, the quality and the reliability of the complete machine, and is applicable to mass production, so as to meet the needs of the array millimeter wave imaging system.
Description
Technical field
The present invention relates to a kind of millimeter wave receiver, particularly be used for the integrated high-sensitivity millimeter wave receiver of millimeter wave array imaging system.
Background technology
Millimeter wave is meant the electromagnetic wave spectrum medium frequency between 30-300GHz or the wavelength electromagnetic wave between 1cm-1mm, and millimeter wave has than light wave, the better penetrability of electromagnetic infrared wave.Millimeter wave imaging system is the detection imaging system of the various uses that is developed into of these characteristics of utilizing.
Along with improving constantly of millimetric wave device and parts level; The mm-wave imaging mode is constantly development also; Wherein, the array image-forming technology make millimeter wave imaging system by single channel mechanical scanning be embodied as picture developed into include thousands of receivers stare the focal plane arrays (FPA) real time imagery entirely.The array image-forming Technology Need has corresponding millimetric wave device (like MMIC) to support, so replace the inexorable trend that the waveguiding structure system is the millimeter-wave systems development with planar circuit.
The receiver that is used for millimeter wave imaging system must satisfy characteristics such as low noise, high-gain, broadband, for array imaging system the volume of receiver, integrated level and stability has been proposed stricter requirement.
Therefore, a kind of highly sensitive millimeter wave receiver is provided, has become the technical task that those skilled in the art need to be resolved hurrily in fact.
Summary of the invention
The object of the present invention is to provide a kind of good stability, volume is little, highly sensitive and is suitable for the particularly millimeter wave receiver of array imaging system of various millimeter wave receiving systems; To overcome big, the poor stability of volume that prior art exists; Applicability is little, is difficult to realize the defective of array image-forming.
In order to achieve the above object, the integrated high-sensitivity millimeter wave receiver that is used for the millimeter wave array imaging system provided by the invention comprises: the plate body with hole body; Be fixed on the integrated-type radio circuit of said plate body one side, it comprises: be used to receive millimeter wave the planar microstrip slot antenna, be used for the low noise amplifier that the millimeter wave that inserts is amplified and will amplify after millimeter wave convert the integrated diode detector that mixes of the low-frequency voltage signal that is directly proportional with power into; Be fixed on the feed circuit of said plate body opposite side, it is connected with said integrated-type radio circuit through hole body, is used for to said radio circuit power supply; And two the encapsulation lid, be used for the said plate body of clamping so as the encapsulation.
Wherein, said low noise amplifier comprises two GaAs monolithic integrated microwave circuit chips at least; Can adopt 50 Ω microstrip lines to connect between two GaAs monolithic integrated microwave circuit chips.
Wherein, said planar microstrip slot antenna can adopt the line of rabbet joint-microstrip transitions structure, is connected with the monolithic integrated microwave circuit chip through little band; It can be produced on that specific inductive capacity is 2.2, on the ptfe composite of thickness 0.254mm, its area is 36mm * 10mm.
Wherein, said diode detector can adopt that diode back-off technology is produced on that specific inductive capacity is 2.2, on the ptfe composite of thickness 0.254mm.
Wherein, the material of said two encapsulation lids and plate body can be copper, surface gold-plating thickness＞3 μ m, and its size can be 10 * 12 * 40mm.
Preferable, said radio circuit can adopt conducting resinl to stick on a side of said plate body, and said feed circuit can adopt the micro metal connector through said hole body and said radio circuit electric connection.
Preferable, the little band output of said planar microstrip slot antenna can adopt conducting resinl to stick on said plate body relevant position, and in the space between itself and the encapsulation lid, can fill Microwave-Transparent Materials.
In sum, the integrated high-sensitivity millimeter wave receiver that is used for the millimeter wave array imaging system of the present invention adopts the direct detection working system, and is simple in structure; Adopt the planar microstrip slot antenna, can be directly and the mmic chip realization integrated, be of value to the reduction feeder loss; Adopt mmic chip technology and plane microstrip circuit, the production cost that can reduce greatly; Adopt multicore sheet integrated technology, make the fine embodiment of yield rate and consistance.The present invention adopts above-mentioned measure; Effectively overcome defectives such as volume is big, poor stability, reduced volume, the weight of millimeter wave receiver greatly, improved machine performance, q&r; Be suitable for production in enormous quantities, thereby satisfy the demand of array millimeter wave imaging system.
Description of drawings
Fig. 1 is the system chart that is used for the integrated high-sensitivity millimeter wave receiver of millimeter wave array imaging system of the present invention;
Fig. 2 a is the front schematic view of the encapsulation lid and the packaging body that plate body constitutes of the integrated high-sensitivity millimeter wave receiver that is used for the millimeter wave array imaging system of the present invention;
Fig. 2 b is the encapsulation lid of the integrated high-sensitivity millimeter wave receiver that is used for the millimeter wave array imaging system of the present invention and the schematic rear view of the packaging body that plate body constitutes;
Fig. 3 is the planar microstrip slot antenna structural representation that is used for the integrated high-sensitivity millimeter wave receiver of millimeter wave array imaging system of the present invention;
Fig. 4 is the planar microstrip slot antenna radiation characteristic measurement result figure that is used for the integrated high-sensitivity millimeter wave receiver of millimeter wave array imaging system of the present invention;
Fig. 5 is the radio circuit sensitivity respective frequencies curve that is used for the integrated high-sensitivity millimeter wave receiver of millimeter wave array imaging system of the present invention.
Embodiment
Below will combine accompanying drawing to further specify the integrated high-sensitivity millimeter wave receiver that is used for the millimeter wave array imaging system of Ka wave band of the present invention.
See also Fig. 1 and Fig. 2, the integrated high-sensitivity millimeter wave receiver that is used for the millimeter wave array imaging system of the present invention comprises at least: plate body, integrated-type radio circuit, feed circuit and two encapsulation lids with hole body.
Said integrated-type radio circuit is fixed on said plate body one side; In the present embodiment; It adopts conducting resinl to stick on the said plate body, and it comprises: be used to receive millimeter wave the planar microstrip slot antenna, be used for the low noise amplifier that the millimeter wave that inserts is amplified and will amplify after millimeter wave convert the integrated diode detector that mixes of the low-frequency voltage signal that is directly proportional with power into.
See also Fig. 3; It is the structural representation of said planar microstrip slot antenna; Adopted broadband row ripple end-fire planar slot antenna, had suitable gain and beam angle, antenna area is 36mm * 10mm; Said antenna photoetching is thick at substrate to be on 2.2 the ptfe composite for the 0.254mm specific inductive capacity, adopts microstrip structure to link to each other with low noise amplifier.See also Fig. 4 again, it is said radiation pattern, can find out, antenna has good radiation characteristic at 35GHz, can be successfully applied in the array millimeter wave imaging system.
Said low noise amplifier adopts two monolithic integrated microwave circuit chips (MMIC) cascade to form; Have high-gain, low noise, broadband character; Mmic chip adopts 0.25um GaAs pHEMT processes to form; Have little area, stable performance, connect through 50 Ω microstrip lines between two chips, adopt the planar microstrip slot antenna of the line of rabbet joint-microstrip transitions structure also to be connected with the monolithic integrated microwave circuit chip through little band.
Said diode detector adopts and mixes integrated diode detector, and wave detector is produced on that specific inductive capacity is 2.2, on the ptfe composite of thickness 0.254mm, adopt diode back-off technology to realize interconnection.
See also Fig. 5, it is the radio frequency part sensitivity respective frequencies curve of radio circuit, can find out that from figure radio frequency part has the sensitivity about 5 * 106mV/mW, and the bandwidth greater than 7GHz is arranged.
Said feed circuit are fixed on said plate body opposite side, and it is connected with said integrated-type radio circuit through hole body, are used for to said radio circuit power supply.In the present embodiment, said feed circuit adopt the micro metal connector through hole body and said radio circuit electric connection on the said plate body.
Said two cap bodies are used to encapsulate said plate body, and in the present embodiment, the structure of the two encapsulation packaging bodies that lid and plate body constituted is shown in Fig. 2 a and 2b, and the material of packaging body is a copper, surface gold-plating thickness＞3 μ m, and it is of a size of 10 * 12 * 40mm.The little band output of said planar microstrip slot antenna adopts conducting resinl to stick on said plate body relevant position, and its with said two spaces that encapsulate between the lids in fill Microwave-Transparent Materials.
The said principle of work that is used for the integrated high-sensitivity millimeter wave receiver of millimeter wave array imaging system is: receive millimeter wave by said planar microstrip slot antenna; Send into low noise amplifier through after the feeder loss; Low noise amplifier is amplified to the scope that diode detector can detect with millimeter-wave signal; Diode detector is transformed into millimeter-wave signal the low-frequency voltage signal that is directly proportional with power; And feed circuit convert one tunnel input direct-flow positive voltage into positive and negative two-way DC voltage, realize the power supply to radio circuit.
In sum, the integrated high-sensitivity millimeter wave receiver that is used for the millimeter wave array imaging system of the present invention adopts double-decker, plate body one side installing radio circuit, opposite side is settled feed circuit, two-layer between lead-in wire through through hole connect.Adopt this compact structure, the volume of millimeter wave receiver is reduced greatly, be of a size of 10 * 12 * 40m; Input is direct and the planar microstrip antenna is integrated, has reduced the loss of radio frequency transmission path, covers Microwave-Transparent Materials on it; Neither influence radio-frequency performance and can protect internal circuit again; Simplify the structure of radiometer system, reduced cost, more helped the application of array imaging system.
The foregoing description is just listed expressivity principle of the present invention and effect is described, but not is used to limit the present invention.Any personnel that are familiar with this technology all can make amendment to the foregoing description under spirit of the present invention and scope.Therefore, rights protection scope of the present invention should be listed like claims.
Claims (7)
1. integrated high-sensitivity millimeter wave receiver that is used for the millimeter wave array imaging system is characterized in that comprising:
Plate body with hole body;
Be fixed on the integrated-type radio circuit of said plate body one side, it comprises: be used to receive millimeter wave the planar microstrip slot antenna, be used for the low noise amplifier that the millimeter wave that inserts is amplified and will amplify after millimeter wave convert the integrated diode detector that mixes of the low-frequency voltage signal that is directly proportional with power into;
Be fixed on the feed circuit of said plate body opposite side, it is connected with said integrated-type radio circuit through hole body, is used for to said radio circuit power supply;
Two encapsulation lids are used for the said plate body of clamping so that encapsulation;
Said low noise amplifier comprises two GaAs monolithic integrated microwave circuit chips at least, adopts 50 Ω microstrip lines to connect between said two GaAs monolithic integrated microwave circuit chips.
2. the integrated high-sensitivity millimeter wave receiver that is used for the millimeter wave array imaging system as claimed in claim 1 is characterized in that: said planar microstrip slot antenna adopts the line of rabbet joint-microstrip transitions structure, is connected with the monolithic integrated microwave circuit chip through little band.
3. according to claim 1 or claim 2 the integrated high-sensitivity millimeter wave receiver that is used for the millimeter wave array imaging system; It is characterized in that: said planar microstrip slot antenna is produced on that specific inductive capacity is 2.2, on the ptfe composite of thickness 0.254mm, and its area is 36mm * 10mm.
4. the integrated high-sensitivity millimeter wave receiver that is used for the millimeter wave array imaging system as claimed in claim 1 is characterized in that: said diode detector adopts that diode back-off technology is produced on that specific inductive capacity is 2.2, on the ptfe composite of thickness 0.254mm.
5. the integrated high-sensitivity millimeter wave receiver that is used for the millimeter wave array imaging system as claimed in claim 1 is characterized in that: the material of said encapsulation lid and plate body all is a copper, surface gold-plating thickness＞3 μ m, and it is of a size of 10 * 12 * 40mm.
6. the integrated high-sensitivity millimeter wave receiver that is used for the millimeter wave array imaging system as claimed in claim 1; It is characterized in that: said radio circuit adopts conducting resinl to stick on a side of said plate body, and said feed circuit adopt the micro metal connector through said hole body and said radio circuit electric connection.
7. the integrated high-sensitivity millimeter wave receiver that is used for the millimeter wave array imaging system as claimed in claim 1; It is characterized in that: the little band output of said planar microstrip slot antenna adopts conducting resinl to stick on said plate body relevant position, and its with the space that encapsulates between the lid in fill Microwave-Transparent Materials.
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| CN2010101092820A CN101776750B (en) | 2010-02-11 | 2010-02-11 | Integrated high-sensitivity millimeter wave receiver for millimeter wave array imaging system |
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| CN2010101092820A CN101776750B (en) | 2010-02-11 | 2010-02-11 | Integrated high-sensitivity millimeter wave receiver for millimeter wave array imaging system |
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| CN101776750A CN101776750A (en) | 2010-07-14 |
| CN101776750B true CN101776750B (en) | 2012-07-25 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103219587B (en) * | 2013-04-07 | 2015-06-03 | 北京理工大学 | Terahertz front-end integrated receiving device based on bulk silicon MEMS (micro-electromechanical system) technical antenna |
| CN103235342B (en) * | 2013-05-13 | 2016-03-23 | 常州芯飞宁电子有限公司 | A kind of probe apparatus of millimeter wave weapon hidden on human body monitoring and control method |
| CN109188553B (en) * | 2018-11-08 | 2020-04-28 | 常州工学院 | Non-contact detection device and method for embedded electric wire in wall |
| US11329857B2 (en) * | 2020-05-05 | 2022-05-10 | Nanya Technologies Corporation | Cellular network |
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Effective date of registration: 20170609 Address after: Hangzhou City, Zhejiang province 310005 Moganshan Road No. 1418-8 Building 1 room 205 (Shangcheng science and technology industrial base) Patentee after: Hangzhou core technology Co., Ltd. Address before: 200050 Changning Road, Shanghai, No. 865, No. Patentee before: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences |
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