CN101770971A - Wafer bearing device - Google Patents
Wafer bearing device Download PDFInfo
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- CN101770971A CN101770971A CN200810205396A CN200810205396A CN101770971A CN 101770971 A CN101770971 A CN 101770971A CN 200810205396 A CN200810205396 A CN 200810205396A CN 200810205396 A CN200810205396 A CN 200810205396A CN 101770971 A CN101770971 A CN 101770971A
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- bearing device
- wafer bearing
- central opening
- wafer
- shielding part
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Abstract
The invention discloses a wafer bearing device, which comprises a bearing platform provided with a central opening and a shielding piece, wherein the shielding piece is arranged in the central opening of the bearing platform and provided with an access. Since the shielding piece is arranged in the central opening of the bearing platform, the radio-frequency current and fluid in a fluid pipeline are mutually isolated by the shielding piece, the phenomenon that an electric arc mark is formed through an electric arc effect due to a conductive plasma generated by the fluid caused by being subject to the radio-frequency electric energy action in the semiconductor production process can be avoided, the damage to a wafer and the bearing platform can be reduced, the service life of the wafer bearing device can be prolonged and the yield of products can be correspondingly improved.
Description
Technical field
The present invention relates to a kind of wafer bearing device.
Background technology
Generally, at semiconductor wafer in processing procedure, for example physical vapor deposition (PVD) or chemical vapor deposition (CVD), reaction all is to carry out in certain airtight chamber.
With PVD technology is example, generally all carries out at the processing unit that can produce plasma.This processing unit has reative cell, in described reative cell, disposes the bogey that is used to keep pending wafer.
Fig. 1 is for showing the vertical profile end view of existing PVD device.As shown in Figure 1, this PVD device comprises the fluid circuit 12 of the central opening 100 of plummer 10 with central opening 100 and corresponding plummer 10.Plummer 10 can be an electrostatic chuck (E-Chuck) for example, has adsorption function being connected with radio freqnency generator (RFPower) and producing under the situation of static, wafer W can be adsorbed.Fluid circuit 12 is arranged on the bottom of plummer 10, an end wherein is the central opening 100 over against plummer 10, and the relative other end can be communicated in mass flow controller (Mass Flow Controller, MFC), described MFC can produce gas during running, Ar for example, and described gas is discharged from an end with certain flow by fluid circuit 12, the gas of described discharge acts on the back side of the wafer W that plummer 10 carried, makes wafer W can suspend under the effect of gas.Like this, wafer W under the balanced action of the absorption of plummer 10 and gas support can with a determining deviation suspending, and carry out corresponding PVD technology.
But, as shown in Figure 1, because plummer 10 has certain thickness, so have the space of one section supplied gas circulation at central opening 100 places, gas can be subjected to the influence of peripheral radio-frequency electrical energy by described that section space the time, a part of gas wherein can be excited and form the plasma (plasma) of conduction, and described plasma is known from experience and caused the electric arc effect, makes all can form the electric arc mark at the perisporium of plummer central authorities that section pipeline and the back side of wafer.Described electric arc mark can scratch to wafer and have influence on the yield of wafer.In addition, when plummer 10 was safeguarded, same requirement must be got rid of these electric arc marks, like this, must adopt physics wiping or chemical reaction to remove described electric arc mark, but so tend to plummer 10 is caused damage, influences its useful life.This is a very big cost consumption for the high equipment of price.
Summary of the invention
The problem that the present invention solves provides a kind of wafer bearing device, and the plasma that the fluid of avoiding being used for the support wafer produces conduction owing to the influence that is subjected to radio-frequency electrical energy causes the problem of electric arc effect.
For addressing the above problem, the invention provides a kind of wafer bearing device, comprise plummer with central opening, wherein, in the central opening of plummer, also be provided with shielding part with path.
Alternatively, described shielding part is the cylinder of hollow, and described openwork part forms path.
Alternatively, described cylinder comprises what the insulation material was made.
Alternatively, described insulation material comprises pottery or quartz.
Alternatively, the caliber of described path is consistent with the caliber of described fluid circuit.
Alternatively, described shielding part also comprises is located at its outer wall, is used to be sticked in the holding section of the perisporium of described central opening.
Alternatively, also include the breach that matches with the holding section on the perisporium of described central opening.
Alternatively, described holding section is the flexible member that is looped around the shielding part perisporium.
Alternatively, described flexible member is metal spring coil or nonmetal expansion loop.
Alternatively, described metal spring coil comprises and being made by platinum, titanium or tantalum.
Alternatively, described nonmetal expansion loop comprises and being made by polytetrafluoroethyl-ne or olefinic carbon fiber.
Compared to prior art, the invention provides the shielding part of the central opening of being located at plummer, described shielding part has the path that is connected with fluid circuit, make the fluid in the path avoid the influence of its peripheral radio-frequency electrical energy, can prevent the generation of electric arc effect, avoid to increase the useful life of bogey, the yield of corresponding raising wafer at plummer or wafer rear residual arc mark.
Description of drawings
Fig. 1 is the vertical profile end view of existing wafer bearing device;
Fig. 2 is the vertical profile end view of wafer bearing device of the present invention in first embodiment;
Fig. 3 is the structural representation of shielding part in first embodiment in the wafer bearing device among Fig. 2;
Fig. 4 is the vertical profile end view of wafer bearing device of the present invention at second embodiment;
Fig. 5 is the vertical profile end view of wafer bearing device of the present invention in the 3rd embodiment.
Embodiment
The invention provides a kind of wafer bearing device that is applied to manufacture of semiconductor, the fluid circuit that comprises the central opening of plummer with central opening and corresponding plummer, wherein, also be provided with the shielding part with path in the central opening of plummer, described path is connected with fluid circuit.Described shielding part can make that fluid and the radio-frequency electrical energy in the path is isolated, avoids fluid to produce the electric arc effect because of being subjected to the radio-frequency electrical energy effect.
Below in conjunction with accompanying drawing embodiments of the invention are described.
Fig. 2 is the vertical profile end view of wafer bearing device of the present invention in first embodiment.As shown in Figure 2, wafer bearing device 2 is to be applied to (be illustrated) in the air-tightness container handling, is used to carry wafer W.In described air-tightness container handling, can carry out kinds of processes and handle wafer W, for example physical vapor deposition (PVD), chemical vapor deposition (CVD) or etch process, in the present embodiment, carrying out physical vapor deposition process with wafer is that example describes.Because of described air-tightness container handling is well known to those skilled in the art, and its structure, characteristic do not change in the present embodiment, so do not give unnecessary details at this.
As shown in Figure 2, wafer bearing device 2 comprises carrying pallet 20, is located at the plummer 22 that carries pallet 20 tops.Plummer 22 is used to carry wafer, and it can have adsorption function being connected with radio freqnency generator (RF Power) and producing under the situation of static, wafer W can be adsorbed.The profile of plummer 22 is consistent and in the form of annular discs with the wafer that is carried, and has a central opening 220 at the geometric center place of plummer 22, and described central opening 220 also is rounded.Carrying pallet 20 offers the fluid circuit 240 that is positioned at plummer 22 belows, one end of fluid circuit 240 is to be right against central opening 220, and the other end is the gas generation apparatus that is communicated in far-end, for example mass flow controller (Mass Flow Controller, MFC).Described MFC can produce gas during running, Ar for example, and with certain flow the back side of wafer W is discharged and acted on to described gas from an end by fluid circuit 240, make wafer W under the effect of gas, can suspend.Like this, wafer W can keep stably suspending under the situation of a determining deviation under the balanced action of the absorption of plummer 22 and the outstanding holder of gas with plummer 22.
In addition, also be provided with a breach 222 on the perisporium of central opening 220.The cross section of breach 222 is circular arc.
The present invention also comprises the shielding part 26 in the central opening 220 that is used to be located at plummer 22.As shown in Figure 2, the structural representation that shows shielding part 26 provided by the present invention.In conjunction with Fig. 2 and Fig. 3, shielding part 26 has the path 260 of perforation in central authorities, and when shielding part 26 was arranged in the central opening 220 of plummer 22, the fluid circuit 240 that described path 260 is with carrying pallet 20 is offered was connected, and is used to provide described gas to pass through.Because being in the gas of circulation and connecting, shielding part 26 has between the plummer 22 of radio-frequency electrical energy, make described gas can avoid peripheral radio-frequency electrical energy influence or the institute influenced less relatively, can avoid or weaken issuable thereupon electric arc effect and electric arc mark thereof.
In the present embodiment, shielding part 26 can be the cylinder that is complementary with central opening 220, and hollow out is to form path 260 in the middle of it.Be complementary with central opening 220 and be meant that specifically described cylindrical diameter dimension is equal to or slightly less than the diameter dimension of central opening 220 substantially.Preferably, described cylindrical height can be consistent with the degree of depth of central opening 220.In addition, the caliber of path 260 can be consistent with the caliber of fluid circuit 240.
In addition, shielding part 26 can adopt the insulation material, and for example pottery or quartzy is made.With the pottery is example, and it not only has insulation effect, also have coefficient of thermal expansion little, high temperature resistant, wear-resistant, be difficult for advantage such as oxidation, so have advantages of higher stability and long useful life.
In shielding part 26, can adopt hollow-core construction or solid construction at the mid portion of the perisporium of its outer wall and path 260.In hollow-core construction, be empty between the perisporium of outer wall and path 260, like this, not only can alleviate the overall weight of shielding part 26, can also utilize described hollow space to play the effect heat insulation or influence of isolation radio-frequency electrical energy.
For shielding part 26 more firmly is positioned in the central opening 220, shielding part 26 also is provided with the holding section 262 of matching with the breach 222 of central opening 220 at its outer wall.Holding section 262 can be the flexible member of the perisporium that is looped around shielding part 26, and in the present embodiment, described flexible member can be by metal material, for example platinum, titanium or tantalum, made spring coil not only has preferable elasticity, have more etch-proof characteristic, useful life is longer.Described spring coil is the perisporium that is centered around shielding part 26.Preferably, offer the cross section at the perisporium of shielding part 26 and be arc groove, part for described flexible member embeds wherein, in addition a part is then protruding is exposed to described perisporium, and can when the assembling engaging, the protruding dew part of described flexible member just can also embed therebetween by corresponding breach 222, play the effect of firm engaging.Though the holding section 262 in the foregoing description is that example describes with the metal spring coil, but not as limit, in other embodiment, described flexible member also can be by non-metallic material, for example polytetrafluoroethyl-ne or olefinic carbon fiber, made nonmetal expansion loop should have similar engaging effect.
When needs are assemblied in plummer 22 with shielding part 26, be central opening 220 insertions of the bottom of shielding part 26 being aimed at plummer 22, take advantage of a situation then and promote shielding part 26 continuation down, move down in the process described, the extruding that understand because of the perisporium that is subjected to central opening 220 holding section 262 of shielding part 26 has certain contraction, when the holding section 262 of shielding part 26 moves down into breach 222 places corresponding to central opening 220, holding section 262 is because of the extruding natural expansion of the perisporium that is not subjected to central opening 220, protruding perisporium and the corresponding breach 222 that embeds central opening 220 that is exposed to shielding part 26 of its part so promptly finished the assembling of shielding part 26.After assembling was finished, the top of shielding part 26 was that the table top with plummer 22 flushes, and the path 260 of shielding part 26 is that the fluid circuit 240 with plummer 22 belows aligns.
Like this, wafer W is in carrying out the PVD technical process, and gas Ar can be expelled to the back side of wafer W by fluid circuit 240 and path 260, makes wafer W suspend.Owing to adopted shielding part 26, make that fluid and radio-frequency electrical energy in the path are isolated, the gas Ar that flows in path 260 can not be subjected to the direct influence of radio-frequency electrical energy in the central opening 220 side plummers 22, avoids fluid to produce the electric arc mark because of being subjected to the radio-frequency electrical energy effect.
Foregoing description only be an embodiment of the technical program, but not as limit, in peculiar embodiment, the shielding part in the technical program can also have other variation example.
Fig. 4 has shown wafer bearing device of the present invention vertical profile end view in a second embodiment.As shown in Figure 4, shielding part 36 is formed with path 360 in the centre, comprises the holding section 362 of the perisporium of being located at shielding part 36.Described holding section 362 still can be the metal spring coil, the protruding perisporium that is exposed to shielding part 36 of the part of described metal spring coil.
Different with first embodiment is in the present embodiment, not have breach on the perisporium of the central opening 320 of plummer 32.
In the present embodiment, after shielding part 36 was assemblied in plummer 32, described metal spring coil utilized himself elasticity that shielding part 362 firmly is sticked in the central opening 320, does not influence its result of use.
Fig. 5 has shown the vertical profile end view of wafer bearing device of the present invention in the 3rd embodiment.As shown in Figure 5, different with second embodiment is that in the present embodiment, shielding part 46 includes a plurality of holding sections 462 of being located at its perisporium.Described holding section 462 can be at certain intervals, and for example uniformly-spaced, ground is provided with in regular turn.In addition, holding section 462 still can be the metal spring coil, the protruding perisporium that is exposed to shielding part 46 of the part of described metal spring coil.
In the present embodiment, after shielding part 46 is assemblied in plummer 42, described a plurality of metal spring coil utilizes himself elasticity shielding part 46 to be sticked in the central opening 420 of plummer 42, realize engaging than holding section of aforementioned employing, in the present embodiment, adopt a plurality of holding sections can be so that shielding part 46 can more firmly be assemblied in plummer 42.
In sum, the invention provides a kind of wafer bearing device that is applied to manufacture of semiconductor, include the shielding part in the central opening that is assemblied in plummer, described shielding part is a hollow design, has the path that is connected with the circulation pipeline, make that the fluid in path can be isolated with radio-frequency electrical energy, avoid fluid to produce the electric arc effect, on plummer or wafer, stay the electric arc mark because of being subjected to the radio-frequency electrical energy effect.
Though the present invention with preferred embodiment openly as above; but it is not to be used for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
Claims (11)
1. a wafer bearing device comprises the plummer with central opening, it is characterized in that, described wafer bearing device also comprises for being located in the central opening of plummer and having the shielding part of path.
2. wafer bearing device according to claim 1 is characterized in that, described shielding part is the cylinder of hollow, and described openwork part forms path.
3. wafer bearing device according to claim 2 is characterized in that, described cylinder comprises what the insulation material was made.
4. wafer bearing device according to claim 3 is characterized in that, described insulation material comprises pottery or quartz.
5. wafer bearing device according to claim 2 is characterized in that, described cylindrical height is that the height with plummer is consistent.
6. wafer bearing device according to claim 1 is characterized in that, described shielding part also comprises is located at its outer wall, is used to be sticked in the holding section of the perisporium of described central opening.
7. wafer bearing device according to claim 6 is characterized in that, also includes the breach that matches with the holding section on the perisporium of described central opening.
8. wafer bearing device according to claim 6 is characterized in that, described holding section is the flexible member that is looped around the shielding part perisporium.
9. wafer bearing device according to claim 8 is characterized in that, described flexible member is metal spring coil or nonmetal expansion loop.
10. wafer bearing device according to claim 9 is characterized in that, described metal spring coil comprises to be made by platinum, titanium or tantalum.
11. wafer bearing device according to claim 9 is characterized in that, described nonmetal expansion loop comprises to be made by polytetrafluoroethyl-ne or olefinic carbon fiber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008102053968A CN101770971B (en) | 2008-12-31 | 2008-12-31 | Wafer bearing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008102053968A CN101770971B (en) | 2008-12-31 | 2008-12-31 | Wafer bearing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101770971A true CN101770971A (en) | 2010-07-07 |
| CN101770971B CN101770971B (en) | 2012-06-20 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008102053968A Active CN101770971B (en) | 2008-12-31 | 2008-12-31 | Wafer bearing device |
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| Country | Link |
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| CN (1) | CN101770971B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107026102A (en) * | 2015-11-04 | 2017-08-08 | 东京毅力科创株式会社 | Substrate-placing platform and substrate board treatment |
| CN109837518A (en) * | 2017-11-28 | 2019-06-04 | 北京北方华创微电子装备有限公司 | Deposition ring fixation kit, bogey and reaction chamber |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100427459B1 (en) * | 2001-09-05 | 2004-04-30 | 주성엔지니어링(주) | Electro-static chuck for preventing arc |
| JP4365766B2 (en) * | 2004-10-26 | 2009-11-18 | 京セラ株式会社 | Wafer support member and semiconductor manufacturing apparatus using the same |
| JP2008172255A (en) * | 2008-01-25 | 2008-07-24 | Ngk Spark Plug Co Ltd | Electrostatic chuck |
-
2008
- 2008-12-31 CN CN2008102053968A patent/CN101770971B/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107026102A (en) * | 2015-11-04 | 2017-08-08 | 东京毅力科创株式会社 | Substrate-placing platform and substrate board treatment |
| CN109837518A (en) * | 2017-11-28 | 2019-06-04 | 北京北方华创微电子装备有限公司 | Deposition ring fixation kit, bogey and reaction chamber |
| CN109837518B (en) * | 2017-11-28 | 2021-06-08 | 北京北方华创微电子装备有限公司 | Deposition ring fixing assembly, bearing device and reaction chamber |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101770971B (en) | 2012-06-20 |
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