CN101764041A - Heat treatment device and method - Google Patents
Heat treatment device and method Download PDFInfo
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- CN101764041A CN101764041A CN200810208071A CN200810208071A CN101764041A CN 101764041 A CN101764041 A CN 101764041A CN 200810208071 A CN200810208071 A CN 200810208071A CN 200810208071 A CN200810208071 A CN 200810208071A CN 101764041 A CN101764041 A CN 101764041A
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Abstract
The invention discloses a heat treatment method. In the method, a workpiece is arranged on a workpiece chuck; heat treatment is carried out on the workpiece in a radiating manner of a radiation source; finally, the workpiece is cooled when the surface temperature of the workpiece reaches or lags behind the peak temperature. The invention further provides a heat treatment device. The invention can shorten the heat treatment time of the workpiece in order to change the heat treatment effect of the workpiece, is beneficial for accurately controlling the heat budget, and can adjust the heat treatment time according to need.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly a kind of annealing device and method.
Background technology
Thermal anneal process is widely used in the manufacturing process of semiconductor integrated circuit.For example, ion, the strained silicon manufacturing process of using thermal anneal process to activate injection after ion injects use thermal anneal process to change stress etc.
Along with the integrated level raising, reducing of device size, more and more higher to the thermal anneal process requirement, for example, annealing time needs strict control, and heat budget reduces and reduction etc. owing to device.Introduce flash anneal (Flash Anneal) technology based on this industry.Flash anneal technology is meant utilizes radiation source that workpiece (for example semiconductor-based end) is carried out the pulsed radiation, and the energy that carries with radiation is to the workpiece heat-treating process.
The processing unit of flash anneal technology generally comprises radiation source and workpiece chuck; Wherein, the workpiece chuck is used to place workpiece; Radiation source can be lasing light emitter, ultraviolet source homenergic source, is used for to being positioned at the workpiece emittance workpiece being heat-treated.
When work, at first workpiece is placed on the described workpiece chuck; Then, select suitable energy and time, the control radiation source is heat-treated described workpiece to the workpiece emittance.
Because the energy of radiate source radiation is generally pulsed, after the energy of radiation source arrived the workpiece upper surface, the temperature of workpiece can raise gradually, and reaches peak value, slowly drops to initial temperature then.Workpiece variations in temperature (can be upper surface or lower surface, lower surface be the back side) forms the temperature curve that rises and afterwards descend earlier.
Generally speaking, state equipment and method in the use in the workpiece process of thermal treatment, peak temperature and Technology for Heating Processing duration can influence heat treated effect, for example in the shallow junction ion implantation technology, the temperature of active ions and duration can influence shallow junction region resistivity, the degree of depth, profile of formation etc., thereby need control peak temperature and duration preferably.Wherein, this duration is temperature curve upward peak temperature one half time corresponding interval.
In the patent No. is in the United States Patent (USP) of US7223660B2, discloses a kind of flash anneal technology, in its disclosed technical scheme, accumulates by multiple pulses and to extend the pulse duration and to change the peak temperature value.
Yet, this method but can't be compressed the heat treated duration in the flash anneal, and feasible adjustment to the duration is restricted, particularly along with device size is more and more littler, under the more and more low situation of heat budget, effectively control the heat treated duration and seem particularly important.
Summary of the invention
The invention provides a kind of annealing device and method, to solve the problem that existing Technology for Heating Processing can't reduce the heat treatment duration.
A kind of heat treatment method provided by the invention comprises:
Workpiece is placed on the workpiece chuck;
Mode with radiate source radiation is carried out Technology for Heating Processing to described workpiece;
When the work piece surface temperature reaches peak temperature or after peak temperature, described workpiece is carried out process for cooling.
Optionally, when when the work piece surface temperature reaches peak temperature, carrying out process for cooling, determine by real-time monitoring work piece surface temperature and according to variations in temperature whether the work piece surface temperature reaches peak temperature; Perhaps judge by workpiece heating-up temperature and time graph whether the work piece surface temperature reaches peak temperature.
Optionally, the mode to described workpiece execution process for cooling is water cooling or gas cooled.
Optionally, described process for cooling is a gas cooled, carries out described gas cooled technology by refrigerating gas being blowed to the described workpiece upper surface and/or the back side.
Optionally, described refrigerating gas comprises inert gas or nitrogen.
Optionally, the gas that blows to described work piece surface is successional or discontinuous.
Optionally, when with when the mode of workpiece back side blowing cooling gas is carried out process for cooling, blow refrigerating gas with identical flow to the described workpiece back side with uniform temp by the equally distributed plurality of openings in the workpiece chuck back side.
Optionally, when when the work piece surface temperature reaches peak temperature, carrying out process for cooling, drop to peak temperature one half, stop to carry out described process for cooling in the work piece surface temperature.
Optionally, described radiation source comprises LASER Light Source and ultraviolet source.
The present invention also provides a kind of annealing device, comprises workpiece chuck and radiation source; Wherein, described radiation source is positioned at above the described workpiece chuck, and the workpiece that is used to be opposite on the described workpiece chuck is heat-treated; Also comprise cooling device, control device and temperature sensor;
Described temperature sensor is used to detect the temperature of the workpiece on the described workpiece chuck;
Described cooling device is used for workpiece is carried out process for cooling;
Described control device is used to judge the work piece surface temperature and controls cooling device when temperature reaches peak temperature or after peak temperature workpiece is carried out process for cooling.
Optionally, described temperature sensor and cooling device are arranged in described workpiece chuck.
Optionally, described cooling device comprises a plurality of gas nozzles towards the workpiece back side, and described nozzle is connected with the cooling source of the gas.
Optionally, described a plurality of nozzle center constitutes concentric circles along the line of workpiece edge direction.
Compared with prior art, one of them of technique scheme has the following advantages at least:
When arriving peak temperature or afterwards, workpiece is carried out process for cooling, can change the speed that the workpiece temperature descends, reduce the duration, and can obtain the different duration as required in the work piece surface temperature; Just can be under the situation that does not change peak temperature, the compression duration; Thereby can improve control ability, help as required the heat treated duration being adjusted flash anneal technology;
In addition, after flash anneal, detect the work piece surface variations in temperature, after reaching peak temperature or peak temperature, begin to carry out process for cooling sometime, to quicken the speed that the work piece surface temperature reduces, with the compression to the workpiece heat treatment period, thereby can change the heat treated effect of workpiece;
In addition, by the intervention time of technology for controlled cooling in workpiece is heat-treated, according to arts demand and autotelic change work piece surface variation of temperature, thereby can reach the purpose of workpiece being heat-treated the control of duration, can more effective control to the heat treatment of workpiece, help controlling more accurately heat budget.
Description of drawings
Fig. 1 is the flow chart of the embodiment of heat treatment method of the present invention;
Fig. 2 is the generalized section of annealing device of the present invention;
Fig. 3 is the temperature response curve schematic diagram when workpiece heat-treated;
Fig. 4 is the vertical view of the workpiece chuck in the annealing device of the present invention;
Fig. 5 is workpiece temperature response curve in the existing heat treatment method and the comparison diagram that uses the temperature response curve of heat treatment method workpiece of the present invention.
Embodiment
Below in conjunction with accompanying drawing the specific embodiment of the present invention is described in detail.
A lot of details have been set forth in the following description so that fully understand the present invention.But the present invention can implement much to be different from alternate manner described here, and those skilled in the art can do similar popularization under the situation of intension of the present invention, so the present invention is not subjected to the restriction of following public concrete enforcement.
In the manufacturing process of semiconductor integrated circuit, quick thermal treatment process commonly used is heat-treated.For example, in the shallow junction manufacturing process, after ion injects, need rapid thermal treatment to activate the ion that injects, repair implant damage; In the metal silicide manufacturing process, need quick thermal treatment process to make metal and pasc reaction generate silicide; Form in the technology in stressor layers, need rapid thermal anneal process in rete, to form stress etc.
Realize that one of quick heat treatment mode is to utilize radiation source that pending workpiece is shone, realize rapid thermal treatment.Characteristics such as utilizing radiation source to carry out quick heat treatment technology and also can be called flash anneal technology, is the technology of workpiece being shone with energy pulse or Continuous Energy pulse mode, and it has the energy height, and the time is short.After above-mentioned energy pulse shone on the workpiece, the temperature of work piece surface rose earlier, descended gradually after rising to peak temperature, and certain duration is arranged, wherein, this duration be temperature curve upward peak temperature one half time corresponding at interval.
The invention provides a kind of heat-treating methods, comprise the steps: workpiece is placed on the workpiece chuck; Mode with radiate source radiation is carried out Technology for Heating Processing to described workpiece; When the work piece surface temperature reaches peak temperature or after peak temperature, described workpiece is carried out process for cooling.Method of the present invention can be under the situation that does not change peak temperature, the compression duration.Can improve control ability, help as required the heat treated duration being adjusted flash anneal technology.
In the method for the present invention, after flash anneal, detect the work piece surface variations in temperature, after reaching peak temperature or peak temperature, begin to carry out process for cooling sometime, to quicken the speed that the work piece surface temperature reduces, with the compression to the workpiece heat treatment period, thereby can change the heat treated effect of workpiece.
In addition, method of the present invention is by the intervention time of technology for controlled cooling in workpiece is heat-treated, according to arts demand and autotelic change work piece surface variation of temperature, thereby can reach the purpose of workpiece being heat-treated the control of duration.Can more effective control to the heat treatment of workpiece, help controlling more accurately heat budget.
Wherein, when when the work piece surface temperature reaches peak temperature, carrying out process for cooling, can determine whether the work piece surface temperature reaches peak temperature by real-time monitoring work piece surface temperature and according to variations in temperature; Also can judge whether the work piece surface temperature reaches peak temperature by workpiece heating-up temperature and time graph.
Wherein, the mode to described workpiece execution process for cooling can be to be water cooling or gas cooled.Described water cooling is adopted the mode that contacts heat exchange with gas cooled, for example, when using water cooling, at described workpiece chuck surface cooling water pipeline is set, to be processed when being positioned on the described workpiece chuck, cooling water pipeline contacts with the workpiece back side, when to be needed, feeds cooling water in described pipeline workpiece is cooled off; When using gases cools off, can gas nozzle be set at the workpiece chuck surface, this nozzle is connected with the cooling source of the gas, when to be needed, can be to workpiece back side blowing cooling gas, thus make the temperature reduction of workpiece.Certainly, during the using gases cooling, also can be to workpiece upper surface blown refrigerating gas.Here be not described in detail.
In addition, if during the using gases cooling, refrigerating gas can nitrogen or the lower gas of reactivity such as inert gas, this is because the work piece surface temperature is higher, with the refrigerating gas of avoiding being exposed in the chamber chemical reaction taking place after contacting with work piece surface, makes the work piece surface material change.Described inert gas for example can be He or Ar etc.
The temperature of described refrigerating gas and flow can be regulated according to arts demand, and for example, if descend fast after needing heat treatment temperature to reach peak value, the duration is very short, just flow can be set more greatly, and the temperature of refrigerating gas is a little low.
In addition, flow and temperature can and reduce along with the reduction of workpiece temperature.
In addition, the temperature of described refrigerating gas is generally ambient temperature or is lower than ambient temperature.Also need to consider the sensitivity of workpiece to variations in temperature when the temperature of refrigerating gas is set, avoid temperature to cross when low, the work piece surface of refrigerating gas and high temperature contact, causes the workpiece temperature shock and causes the workpiece damage, for example is out of shape, fracture etc.
In addition, when using gases cooled off, the gas that blows to described work piece surface was successional or discontinuous.
Wherein, continous way is meant in the whole process for cooling stage, and is continual to the work piece surface blowing cooling gas, is meant the blowing cooling gas in the process for cooling stages period during interruption.
The continuity blowing cooling gas descends the work piece surface temperature fast, makes that the heat treatment duration is shorter, and because the continuity of blowing cooling gas, Technology for Heating Processing chamber state is comparatively stable.
And the discontinuity blowing cooling gas can reduce the refrigerating gas consumption on the one hand, helps making cost to descend, and when stopping to blow, helps discharging fast through the gas of heat exchange on the other hand; In addition, also can make refrigerating gas have the sufficient time to contact, carry out heat exchange, can improve the refrigerating gas utilization ratio with work piece surface.Can select above-mentioned air blowing mode according to arts demand.
In addition, when with when the mode of workpiece back side blowing cooling gas is carried out process for cooling, can blow refrigerating gas with identical flow to the described workpiece back side by the equally distributed plurality of openings in the workpiece chuck back side with uniform temp.That is to say, when carrying out process for cooling, make the temperature of work piece surface evenly change, avoid work piece surface zones of different Technology for Heating Processing difference in the gas cooled mode.
In addition, can when when the work piece surface temperature reaches peak temperature, carrying out process for cooling, drop to peak temperature one half, stop to carry out described process for cooling according to arts demand in the work piece surface temperature.
In addition, described radiation source can comprise LASER Light Source and ultraviolet source.
Below in conjunction with embodiment heat treatment method of the present invention is described in detail.Need to prove; the description of following step should be as the restriction to claim protection range of the present invention; under the condition of the protection range that does not deviate from claim, those skilled in the art instruct according to an embodiment of the invention can be to the interpolation of the step of following embodiment, remove, be equal to and replace or the change of order.
Fig. 1 is the flow chart of one of them embodiment of heat treatment method of the present invention.
Please refer to flow chart shown in Figure 1, step S100 places workpiece on the workpiece chuck.
Workpiece described in the present embodiment can be the semiconductor-based end to be heated, for example, makes in the semiconductor-based end in lightly doped drain (LDD) shallow junction technology, has finished the shallow junction ion implantation technology, need anneal; In the stress silicon nitride manufacturing process, on device layer, formed silicon nitride, needed to carry out annealing to change stress; In the metal silicide manufacturing process, cover metal level in grid, source electrode and drain electrode, for example nickel needs to carry out annealing to form metal silicide.In addition, the Technology for Heating Processing in the time of also can being other situation or the Technology for Heating Processing of other substrate.
Described workpiece chuck is arranged in the chamber of Equipment for Heating Processing, is used for placing and fixing described workpiece chuck.Fig. 2 is the generalized section of a kind of Equipment for Heating Processing of the present invention.
Please refer to Fig. 2, Equipment for Heating Processing of the present invention comprises and is arranged in workpiece chuck 12 and the radiation source 14 that cavity 10 surrounds the chamber that forms.Wherein, described workpiece chuck 12 and radiation source 14 are staggered relatively, and separate certain distance, and the radiation that described radiation source 14 sends can shine the surface of described workpiece chuck 12.
In the present embodiment, described workpiece chuck 12 is positioned at the bottom of described chamber, is horizontal positioned.Workpiece to be heated places on described workpiece chuck 12 surfaces, and workpiece described in the present embodiment is the semiconductor-based end 13.
Described radiation source 14 is positioned at described chamber roof, the top of workpiece chuck 12.Described radiation source 14 can be one, also can be a plurality of, and a plurality of radiation source 14 radiation intensity are identical, and the position evenly distributes, to guarantee having uniform irradiance on workpiece 13 surfaces.
Described radiation source 14 can be a LASER Light Source, also can ultraviolet source, for example Xe light source.In this enforcement, described radiation source is the Xe light source.
Please continue with reference to figure 1, step S110 opens radiation source, with radiation mode described workpiece is carried out heat treatment.In the present embodiment, described radiation source is the Xe light source.
Please refer to Fig. 2, the ultraviolet irradiation that the Xe light source sends by adjusting the angle of Xe light source, can make the irradiance on surface, the semiconductor-based ends 13 even on surface, the semiconductor-based ends 13.
Because the radiation of Xe light source can be a pulsed, for the mode of only carrying out a pulse optical radiation, after the pulse, the Xe light source is promptly closed.And the ultraviolet source irradiation of Xe is after surface, the semiconductor-based ends 13, and surface temperature of the semiconductor-based ends 13 begins to experience and raises and reach the change procedure that peak value descends then.Its change curve can be as shown in Figure 3.
Transverse axis is the time among Fig. 3, and the longitudinal axis is work piece surface (can be that upper surface also can be an a lower surface) temperature, and the moment that begins to rise in the work piece surface temperature picks up counting.As seen from Figure 3, the low variation of falling after rising of work piece surface temperature experience, and descend after rising to peak temperature.And at ascent stage, variations in temperature is bigger, and the time that rises to peak temperature is shorter, and in the decline stage, variations in temperature is slow than ascent stage, and the time that drops to initial temperature (being that workpiece is not carried out heat treatment temperature before) is longer.Because time temperature decline stage is longer, thereby heat treated effect also had bigger influence at the temperature curve of decline stage.Change the duration by adjustment just in the present embodiment, to reach the purpose of control Technology for Heating Processing to decline stage (temperature when comprising peak value) temperature curve.
Please continue with reference to figure 1, step S120 is for detecting the temperature of work piece surface.Wherein, step S120 can begin to carry out before step S110, also can begin to carry out after step S110, also can carry out simultaneously.
In the present embodiment, describe to be implemented as example simultaneously.This is owing to the flash anneal technology burst length is shorter, the temperature height, it is very fast to make the work piece surface temperature rise, if after step S110, begin execution in step S120, be easy to miss the peak temperature of work piece surface, promptly also do not have enough time to begin to measure the temperature of work piece surface, begin after the temperature of work piece surface has experienced ascent stage and reached peak value to descend.Though can avoid the problems referred to above and begin execution in step S120 in advance, in advance the temperature of Ce Lianging and meaningless.
Detecting the temperature of described workpiece can carry out by the temperature sensor that is arranged at the workpiece chuck.Here be not described in detail.
Please refer to Fig. 1, step S130 when the work piece surface temperature reaches peak temperature or after peak temperature, carries out process for cooling to described workpiece.In the present embodiment, beginning to carry out process for cooling when reaching peak temperature with work piece surface is that example describes.Certainly, also can carry out process for cooling in the decline stage.
Temperature by the temperature sensor measurement work piece surface, judge by control device whether the work piece surface temperature reaches peak temperature, when to be processed surface temperature reaches peak temperature, control device control cooling device is carried out process for cooling to described workpiece, make the work piece surface temperature quicken to descend, with the rate temperature change of change work piece surface, thereby change is to the Technology for Heating Processing of workpiece.
Wherein, described control device can integrate with cooling device, also can independently separately exist, and is not described in detail here.In addition, can determine peak temperature in the following way: the temperature of correspondence was peak temperature when the tangent slope of the temperature curve that calculating processing part surface temperature changes, slope were zero.
In the present embodiment, carry out process for cooling by workpiece being carried out gas-cooled mode at the workpiece back side.
Have gas nozzle (figure does not show) on workpiece chuck 12 surfaces shown in Figure 2, can blow out refrigerating gas to the workpiece back side, described refrigerating gas can be a nitrogen, also can inert gas.
Please refer to Fig. 4, the vertical view of shown workpiece chuck has a plurality of nozzles 16 in workpiece chuck 12 surface distributed, and described nozzle 16 is connected with the cooling source of the gas.Described a plurality of nozzle 16 centers constitute concentric circles along the line of workpiece edge direction.Described a plurality of nozzle 16 is even as far as possible in the distribution of described work piece surface.
Treat temperature sensor detect among Fig. 2 back temperature reaches maximum temperature at the semiconductor-based ends 13 time, open cooling device, blow out refrigerating gas by described nozzle 16 to the back side, the described semiconductor-based ends 13.To cooling off at the described semiconductor-based end 13.The gas that blows to described work piece surface can be successional or discontinuous.Be successional in the present embodiment.
In addition, blow refrigerating gas with identical flow to the described workpiece back side, to guarantee that the back side zones of different of workpiece is carried out identical process for cooling with uniform temp by the equally distributed plurality of openings in the workpiece chuck back side.But need the thing of explanation, " identical " in this enforcement can comprise the situation of temperature and flow reasonable change in error range.
Can the workpiece back temperature drop to peak temperature half or when dropping to initial temperature, stop to carry out described process for cooling.
By carrying out process for cooling, can the shortening heat treatment process duration, the curve chart that work piece surface temperature and time as shown in Figure 5 changes.Wherein, the dotted line among the figure is represented to carry out after the described process for cooling of present embodiment, the temperature decline curve, and as can be seen from Figure, the duration T minimizing reduces 25% to 30% with respect to the time of not carrying out process for cooling.
Though the present invention with preferred embodiment openly as above; but it is not to be used for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
Claims (13)
1. a heat treatment method is characterized in that, comprising:
Workpiece is placed on the workpiece chuck;
Mode with radiate source radiation is carried out Technology for Heating Processing to described workpiece;
When the work piece surface temperature reaches peak temperature or after peak temperature, described workpiece is carried out process for cooling.
2. heat treatment method as claimed in claim 1, it is characterized in that: when when the work piece surface temperature reaches peak temperature, carrying out process for cooling, determine by real-time monitoring work piece surface temperature and according to variations in temperature whether the work piece surface temperature reaches peak temperature; Perhaps
Judge by workpiece heating-up temperature and time graph whether the work piece surface temperature reaches peak temperature.
3. heat treatment method as claimed in claim 1 is characterized in that: the mode of described workpiece being carried out process for cooling is water cooling or gas cooled.
4. heat treatment method as claimed in claim 1 is characterized in that: described process for cooling is a gas cooled, carries out described gas cooled technology by refrigerating gas being blowed to the described workpiece upper surface and/or the back side.
5. heat treatment method as claimed in claim 4 is characterized in that: described refrigerating gas comprises inert gas or nitrogen.
6. as claim 4 or 5 described heat treatment methods, it is characterized in that: the gas that blows to described work piece surface is successional or discontinuous.
7. as claim 4 or 5 described heat treatment methods, it is characterized in that:, blow refrigerating gas with identical flow to the described workpiece back side with uniform temp by the equally distributed plurality of openings in the workpiece chuck back side when with when the mode of workpiece back side blowing cooling gas is carried out process for cooling.
8. heat treatment method as claimed in claim 1 is characterized in that: when carrying out process for cooling when the work piece surface temperature reaches peak temperature, drop to peak temperature one half in the work piece surface temperature, stop to carry out described process for cooling.
9. heat treatment method as claimed in claim 1 is characterized in that: described radiation source comprises LASER Light Source and ultraviolet source.
10. an annealing device comprises workpiece chuck and radiation source; Wherein, described radiation source is positioned at above the described workpiece chuck, and the workpiece that is used to be opposite on the described workpiece chuck is heat-treated; It is characterized in that: also comprise cooling device, control device and temperature sensor;
Described temperature sensor is used to detect the temperature of the workpiece on the described workpiece chuck;
Described cooling device is used for workpiece is carried out process for cooling;
Described control device is used to judge the work piece surface temperature and controls cooling device when temperature reaches peak temperature or after peak temperature workpiece is carried out process for cooling.
11. annealing device as claimed in claim 10 is characterized in that: described temperature sensor and cooling device are arranged in described workpiece chuck.
12. annealing device as claimed in claim 10 is characterized in that: described cooling device comprises a plurality of gas nozzles towards the workpiece back side, and described nozzle is connected with the cooling source of the gas.
13. annealing device as claimed in claim 12 is characterized in that: described a plurality of nozzle center constitute concentric circles along the line of workpiece edge direction.
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| CN200810208071A CN101764041A (en) | 2008-12-25 | 2008-12-25 | Heat treatment device and method |
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| CN200810208071A CN101764041A (en) | 2008-12-25 | 2008-12-25 | Heat treatment device and method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105336562A (en) * | 2014-07-22 | 2016-02-17 | 中芯国际集成电路制造(北京)有限公司 | Heat treatment cavity, heat treatment method and coating equipment |
| CN105448654A (en) * | 2014-09-02 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | Manufacturing method of semiconductor structure |
-
2008
- 2008-12-25 CN CN200810208071A patent/CN101764041A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105336562A (en) * | 2014-07-22 | 2016-02-17 | 中芯国际集成电路制造(北京)有限公司 | Heat treatment cavity, heat treatment method and coating equipment |
| CN105448654A (en) * | 2014-09-02 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | Manufacturing method of semiconductor structure |
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