CN101762925A - Electrophoretic display device and manufacturing method thereof - Google Patents

Electrophoretic display device and manufacturing method thereof Download PDF

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Publication number
CN101762925A
CN101762925A CN200910151781A CN200910151781A CN101762925A CN 101762925 A CN101762925 A CN 101762925A CN 200910151781 A CN200910151781 A CN 200910151781A CN 200910151781 A CN200910151781 A CN 200910151781A CN 101762925 A CN101762925 A CN 101762925A
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CN
China
Prior art keywords
sealant
substrate
active area
district
film
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Granted
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CN200910151781A
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Chinese (zh)
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CN101762925B (en
Inventor
李裁求
朴宰秀
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LG Display Co Ltd
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LG Display Co Ltd
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Publication of CN101762925A publication Critical patent/CN101762925A/en
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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/165Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field
    • G02F1/1675Constructional details
    • G02F1/1679Gaskets; Spacers; Sealing of cells; Filling or closing of cells
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/165Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field
    • G02F1/166Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect
    • G02F1/167Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect by electrophoresis
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1339Gaskets; Spacers; Sealing of cells
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00Materials and properties
    • G02F2202/28Adhesive materials or arrangements

Abstract

An electrophoretic display (EPD) device adapted to prevent a dispensed fluid sealant from moving toward a non-active area is disclosed. The EPD device includes: a first substrate configured to include a flexible plate divided into an active area and a non-active area; a thin film transistor array formed on the active area of the plate; a second substrate opposite to the first substrate; an electrophoretic film, between the first and second substrates, configured to contain charged particles driven depending on electrophoresis; a sealant, between the first and second substrates, hardened from fluid state; a sealant block formed on a sealant formation region to prevent the fluid sealant from flowing into the non-active area before hardening of the fluid sealant, wherein the sealant block is configured to include a first dam, a second dam, and a furrow between the first and second dams.

Description

Electro phoretic display device and manufacture method thereof
Technical field
The disclosure relates to a kind of electrophoresis showed (EPD) equipment and manufacture method thereof, more specifically, relates to a kind of being applicable to and prevents that sealant from entering the electro phoretic display device and the manufacture method thereof of non-active area.
Background technology
The application requires the right of priority of the korean patent application No.10-2008-132730 of submission on Dec 23rd, 2008, and this sentences the mode of quoting as proof and incorporates its full content into.
In general, electrophoresis showed (EPD) equipment is a kind of reflective display device, and it can utilize electrophoresis repeatedly to write and wipe image and letter.In other words, EPD makes the charged particle that is dispersed in the flowing material move according to the electric field that applies, with display image or letter.
It is very frivolous that EPD can be made, and still keep display properties usually under the case of bending of for example paper.In addition, compare with paper, EPD provides good visual effect and portability.Consider these factors, as the medium that substitutes of paper, EPD has been subjected to the attention that increases year by year, and has been developed as a kind of flexible display device energetically.
Figure 1A is the sectional view that illustrates according to the EPD of correlation technique.With reference to Figure 1A, the EPD of correlation technique comprises infrabasal plate 10, the upper substrate 12 with top electrode (not shown) with bottom electrode (not shown) and is clipped in electrocoating film 14 between upper and lower substrate 12 and 10.Electrocoating film 14 comprises by the electrophoresis suspended particle of responding between upper and lower electrode that vertical electric field drove.Upper and lower substrate 12,10 can be the base substrate of flexible template.
EPD also comprises the sealant 16 that is clipped between the upper and lower substrate 12,10.Form sealant 16 and invade EPD to prevent moisture.Sealant 16 forms by such operation, that is, this operation is utilized the distributing fluids sealant on infrabasal plate 10 of the divider 18 shown in Figure 1B, and fluid sealant 16a is flowed along direction D1 owing to the tension force between electrocoating film 14 and the upper substrate 12.
Yet the fluid sealant 16a that distributes on flexible infrabasal plate 10 may be not only along positive dirction D1, and may flow along negative direction D2.The fluid sealant 16a that flows along negative direction D2 can arrive the zones of different that exceeds sealant formation district, for example comprises the non-active area of driving circuit loading zone.In the case, fluid sealant 16a causes the fault or the damage that will form or be installed in the driving circuit on the driving circuit loading zone.
For fault or the damage that solves driving circuit, the method for a kind of edge transitions to panel (shift) driving circuit has been proposed.The transfer of driving circuit forces panel extended.Because sealant is formed on unnecessary zone, so the amount of sealant also increases.
Summary of the invention
Therefore, present embodiment relates to a kind of EPD and manufacture method thereof, and it can overcome one or more problem of bringing because of the limitation and the shortcoming of correlation technique basically.
The purpose of present embodiment provides EPD and the manufacture method thereof that a kind of fluid sealant that can prevent to distribute moves to non-active area.
The supplementary features of embodiment and advantage will be described in the following description and will partly manifest from describe, and perhaps can understand by the practice of embodiment.Can realize and obtain the advantage of embodiment by the structure that particularly points out in written instructions and claim and the accompanying drawing.
According to one of present embodiment total aspect, a kind of electro phoretic display device comprises: first substrate, and it includes the source region, sealant forms district and non-active area; Be formed on the thin film transistor (TFT) array in the described active area; Second substrate relative with described first substrate; Electrocoating film between described first substrate and second substrate; Be formed on the sealant in the described sealant formation district; Be formed on the sealant stopper in the described sealant formation district, wherein said sealant stopper comprises the ditch between at least two dam shape things and the dam shape thing.
Sealant forms the district and is arranged in the boundary member between active area and the non-active area, and fluid sealant is dispensed on the contiguous sealant of active area and forms in the district.
The sealant stopper is formed on the sealant formation of non-active area vicinity and distinguishes.
Manufacture method according to a kind of EPD on the other hand of present embodiment may further comprise the steps: prepare first substrate and second substrate, wherein said first substrate includes the source region, sealant forms district and non-active area; In the described active area of described first substrate, form grid and select lines; On the part of comprising of described first substrate described sealant formation district and described active area, form gate insulating film; On described gate insulating film, form semiconductor pattern and source/drain; On described first substrate, form passivating film with described source/drain and described sealant formation district; The pixel electrode that formation links to each other with described drain electrode; Between described first substrate and second substrate, form electrocoating film; And in described sealant formation district, distribute sealant, wherein described gate insulating film and the passivating film that described sealant is formed in the district is carried out composition so that the ditch between at least two dam shape things and the dam shape thing to be provided.
The first and second dam shape things are arranged on the zone that passivating film and gate insulating film are retained after the pattern step of passivating film and gate insulating film, and described ditch is arranged on after the pattern step of passivating film and gate insulating film on the passivating film and the removed zone of gate insulating film.
The first and second dam shape things form with the stack layer of gate insulating film and passivating film.
After the research to following accompanying drawing and detailed description, other system, method, feature and advantage will be maybe to become obvious for a person skilled in the art.Be intended to all this additional systems, method, feature and advantage are included in this description, it fallen within the scope of the present invention, and obtain the protection of following claim.Any content should be as the restriction to those claims in this part.In conjunction with present embodiment, other aspect and advantage is discussed below.Should be appreciated that above-mentioned general description of the present disclosure and following detailed description are exemplary and explanat, and aim to provide further explanation of the present disclosure required for protection.
Description of drawings
Accompanying drawing is included among the application so that the further understanding to embodiment to be provided, and is attached among the application and constitutes the application's a part, and accompanying drawing shows embodiments of the present invention, and is used from instructions one and explains principle of the present disclosure.In the accompanying drawing:
Figure 1A and 1B are the sectional views that illustrates according to the EPD of correlation technique;
Fig. 2 A is the planimetric map that illustrates according to the EPD of embodiment of the present disclosure;
Fig. 2 B is the sectional view along the extraction of the line I-I ' shown in Fig. 2 A;
Fig. 3 is the sectional view that is illustrated in according to the state that is dispersed in the fluid sealant on the EPD of embodiment of the present disclosure; And
Fig. 4 A is the sectional view of the flow state of fluid sealant included among the EPD that illustrates according to embodiment of the present disclosure to 4C.
Embodiment
To describe embodiment of the present disclosure in detail below, example shows its example in the accompanying drawings.These embodiments of Jie Shaoing are provided as example hereinafter, to pass on its spirit to those of ordinary skill in the art.Therefore, these embodiments are implemented with different forms, are not limited to these embodiments described herein thus.In addition, accompanying drawing for convenience of explanation, the size of equipment and thickness may be represented large.Under possible situation, identical label uses to represent identical or like in comprising the disclosure of accompanying drawing.
Describe EPD and manufacture method thereof below with reference to accompanying drawings in detail according to embodiment of the present disclosure.
Fig. 2 A is the planimetric map that illustrates according to the EPD of embodiment of the present disclosure.Fig. 2 B is the sectional view along the I-I ' line drawing of Fig. 2 A.With reference to Fig. 2 A and 2B, the EPD of present embodiment comprises infrabasal plate 20, upper substrate 30 and is clipped in electrocoating film 90 between substrate 20 and 30.EPD is divided into the non-active area NAA with the corresponding active area AA of part that overlap with electrocoating film 90 of infrabasal plate 20 and the remainder (except sealant forms district A) that comprises infrabasal plate 20.
Upper substrate 30 comprises the public electrode 84 that is formed on the upper plate 82.Upper plate 82 can be formed by flexible material, for example flexiplast, flexible basement membrane, flexible metal etc.
Electrocoating film 90 is constructed to comprise a plurality of capsules 92, its each last protective seam 96 that comprises charged pigment particles, is arranged on the lower protective layer 94 of capsule 92 belows and is positioned at capsule 92 tops.White pigments particle 92b and solvent 92c that each capsule 92 is constructed to comprise the mineral black particle 92a that reacts with positive polarity voltage, reacts with reverse voltage.Upper and lower protective seam 96,94 protection capsules 92 prevent that it from moving.Upper and lower protective seam 96,94 can be formed by flexiplast, flexible basement membrane or other similar materials.
Infrabasal plate 20 is included in the center of the gate insulating film 44 on the active area of lower plate 42 intersected with each other and the select lines that forms and data line (not shown), at thin film transistor (TFT) (TFT) 6 that the infall of select lines and data line forms and the pixel electrode 18 that on each pixel region that limits by the select lines that intersects and data line, forms.Lower plate 42 can be formed by flexible material, for example flexiplast, flexible basement membrane, flexible metal etc.
TFT 6 comprise the receiving grid pole tension grid 8, be connected in data line source electrode 10, be connected in the drain electrode 12 of pixel electrode 18 and and grid 8 overlaps and at source electrode 10 with drain and form the active layer 14 of raceway groove between 12.Active layer 14 is formed with source electrode 10 and drain electrode 12 and partly overlaps, to form raceway groove.TFT 6 also comprises the ohmic contact layer 48 that is formed on the active layer 14.Ohmic contact layer 48 carries out Ohmic contact with source electrode 10 and drain electrode 12.Ohmic contact layer 48 can constitute semiconductor pattern 45 with active layer 14.
Pixel electrode 18 electrically contacts by contact hole 17 and drain electrode 12.Contact hole 17 passes passivation (or protection) film 50, and will drain and 12 expose.Passivating film 50 protection TFT 6.
The infrabasal plate 20 that forms with this structure combines with electrocoating film 90 by bonding agent.
EPD also comprises being clipped in the sealant 100 between upper and lower substrate 30 and 20 and being arranged on sealant and forms sealant stopper in the district, and the sealing agent forms the district and is positioned at boundary member between active area and non-active area AA and the NAA.Sealant 100 prevents that moisture from entering EPD inside.The sealant stopper is controlled flowing of sealant 100 in the sealant forming process.
Sealant 100 wherein should distribute operation to use divider 28 shown in Figure 3 to form the assigned address distributing fluids sealant 100a that distinguishes on the A at the sealant of infrabasal plate 20 by distributing operation and the hardening process of fluid sealant 100a curing being formed.Sealant forms assigned address on the district A and is designed to more near active area AA, and the sealant stopper that flows of control fluid sealant 100a is formed near non-active area NAA.
More specifically, because the crooked attribute of included lower plate 42 in the infrabasal plate 20, the fluid sealant 100 before the sclerosis can not only flow to active area AA, but also can flow to non-active area NAA.In order to prevent that fluid sealant 100a from flowing to non-active area NAA, the sealant that the sealant stopper is formed near the boundary member of non-active area NAA forms on the district A.Sealing agent stopper comprises first dam shape thing (dam) 102a, ditch 104 and the second dam shape thing 102b that can be provided with in order as shown in Figure 3.
To describe in detail below by the sealant stopper and prevent that fluid sealant 100a from flowing to non-active area NAA.
The fluid sealant 100a that distributes on infrabasal plate 20 as shown in Figure 3 flows to active area AA and non-active area NAA shown in Fig. 4 A to 4C.The fluid sealant 100a that flows to active area AA fills the opening that is surrounded by infrabasal plate 20, upper substrate 30 and electrocoating film 90.
Simultaneously, shown in Fig. 4 A, because the tension force that produces at the edge of the first dam shape thing 102a, the fluid sealant 100a that flows to non-active area NAA at first is prevented from flowing into ditch 104.Shown in Fig. 4 B, do not prevented by the first dam shape thing 102a and the fluid sealant 100a that overflows to non-active area because the tension force that produces at another edge of the first dam shape thing 102a and secondly be prevented from moving to the second dam shape thing 102b.In addition, shown in Fig. 4 C, the fluid sealant 100a that still moves to non-active area NAA although the effect of the first dam shape thing 102a and ditch 104 is arranged is because the tension force that produces in the edge of the second dam shape thing 102b and be prevented from flowing into non-active area NAA once more.Therefore, by in the sealant forming process, forming the first and second dam shape thing 102a and 102b and the ditch 104 that forms on the district A, can prevent substantially that fluid sealant 100a from flowing into non-active area NAA at sealant.
The first and second dam shape thing 102a and 102b and ditch 104 prevent that not only fluid sealant 100a from moving to non-active area NAA, and prevent moisture intrusion active area AA.This is because moisture is crossed the intrusion path length that the first and second dam shape thing 102a and 102b and ditch 104 invade active area AA by the intrusion path specific humidity flow of QI being obstructed that the second dam shape thing 102b, ditch 104 and the first dam shape thing 102a enter active area AA.In other words, the length in the intrusion path of moisture is long more, and the possibility that moisture is invaded is low more, because outside moisture can evaporation between stage of invasion.Therefore, the first dam shape thing 102a, ditch 104 and the second dam shape thing 102b compare with the equipment that does not have these obstacles and can greatly prevent outside moisture intrusion active area AA.
The upper and lower substrate 30 of the EPD that wherein is formed with dam shape thing and ditch and 20 manufacture method will be described below.Hereinafter with reference to Fig. 2 B this method is described.
At first, shown in Fig. 2 B, infrabasal plate 20 comprises grid 8 and select lines (not shown), and it provides by the metal film that formation and composition on lower plate 42 are used for grid and select lines.On the whole surface that comprises grid 8 and select lines of lower plate 42, form gate insulating film 44.Gate insulating film 44 is formed by the insulating material of for example silicon nitride.At this moment, gate insulating film 44 not only forms on active area AA, and forms on sealant formation district A.
By on lower plate 42, forming and composition amorphous silicon film, amorphous doping silicon fiml and the metal film that is used for data line, on lower plate 42, provide the semiconductor layer pattern 45 that comprises the active layer 14 that piles up and ohmic contact layer 48, source/ drain 10 and 12 and the data line (not shown) with gate insulating film 44.In the case, the formation of semiconductor layer pattern 45 and source/drain can be by forming after to amorphous silicon/doping silicon fiml composition and the composition metal film be finished, or finish by the unified processing of amorphous silicon/doping silicon fiml and metal film being carried out a composition.
Sequentially, comprise source/ drain 10 and 12 and the lower plate 42 of data line on form passivation (or protection) film 50.The contact hole 17 that passivating film 50 compositions is exposed drain electrode 12 with formation.This passivating film 50 is formed by organic insulation, and this organic insulation comprises the material of sensitization acrylic for example or BCB.
In addition, when on active area AA, forming passivating film 50, also form on the district A simultaneously and form passivating film 50 at sealant.In the case, the passivating film 50 on the sealant formation district A is formed on the gate insulating film 44.When by the passivating film on the active area AA 50 being carried out composition when forming contact hole 17, passivating film 50 and gate insulating film 44 that sealant is formed on the district A carry out composition one time, form the first and second dam shape thing 102a and 102b and ditch 104 thus.After the composition operation of passivating film 50, remaining pair of film (or stack layer) pattern that is made of gate insulating film 44 and passivating film 50 becomes first and second dam shape thing 102a and the 102b.Between two film figures, promptly the zone that do not keep of passivating film 44 and gate insulating film 50 becomes ditch 104.The height of the first and second dam shape thing 102a and 102b is corresponding to the overall height of gate insulating film 44 and passivating film 50, because they are to form by the gate insulating film 44 that piles up and passivating film 50 are carried out composition.
Then, provide pixel electrode 18 by formation and composition nesa coating on the lower plate 42 that comprises contact hole 17.Pixel electrode 18 is electrically connected to drain electrode 12 via contact hole 17.
The manufacture method of the electrocoating film that with reference to Fig. 2 A the upper substrate of EPD is described below and combines with upper substrate.
Upper substrate 30 comprises the public electrode 84 that is positioned at upper plate 82 belows.Provide public electrode 84 by below upper plate 82, forming nesa coating.The public electrode 84 of upper plate 82 is bonding with electrocoating film 90.
By below a plurality of capsules 92 and above locate lower protective layer 94 respectively and last protective seam 96 provides electrocoating film 90.Each capsule 92 comprises charged pigment particles.
In this way, though realize the sealant stopper with the set-up mode of the first dam shape thing 102a, ditch 104 and the second dam shape thing 102b, the EPD of present embodiment is not limited thereto.The sealant stopper can be by forming more than the ditch between 2 dam shape things and per two the dam shape things.For example, the EPD of present embodiment can comprise the sealant stopper with other set-up modes, and the first dam shape thing 102a, ditch 104 and the second dam shape thing 102b repeat twice at least in these other set-up modes.
As mentioned above, EPD and manufacture method thereof form at sealant and form the sealant stopper in the district, and the fluid sealant that prevents from the lower plate to be distributed flows into non-active area.Thus, fluid sealant is not formed on the non-desired region (or scope), makes treatment effeciency improve.In addition, because not flowing to driving circuit, fluid sealant do not load the zone, so defective and/or fault in the driving circuit that can prevent from basically in operation subsequently, to form or to install.In addition, do not need, can avoid the size of panel to increase thus the edge transitions of driving circuit to panel.In addition, can also stop outside moisture intrusion active area more effectively.
Although only be directed to above-mentioned embodiment the disclosure has been carried out limited explanation, but those of ordinary skills are to be understood that, the disclosure is not limited to these embodiments, and can make various variations or modification under the situation that does not depart from spirit of the present disclosure.Therefore, the scope of the present disclosure should only be determined by appended claim and equivalent thereof.

Claims (15)

1. electro phoretic display device, this electro phoretic display device comprises:
First substrate, it includes the source region, sealant forms district and non-active area;
Be formed on the thin film transistor (TFT) array in the described active area;
Second substrate relative with described first substrate;
Electrocoating film between described first substrate and second substrate;
Be formed on the sealant in the described sealant formation district;
Be formed on the sealant stopper in the described sealant formation district,
Wherein said sealant stopper comprises the ditch between at least two dam shape things and the dam shape thing.
2. electro phoretic display device according to claim 1, wherein said sealant form to be distinguished in the boundary member that is arranged between described active area and the non-active area.
3. electro phoretic display device according to claim 1, wherein said sealant be dispensed on before by sclerosis that described sealant forms the district with the contiguous part of described active area in.
4. electro phoretic display device according to claim 1, wherein said sealant stopper be formed on that described sealant forms the district with the contiguous part of described non-active area in.
5. electro phoretic display device according to claim 1, wherein said first substrate and second substrate respectively comprise flexible material.
6. electro phoretic display device according to claim 1, wherein said first substrate also comprises gate insulating film and passivating film, and wherein said dam shape thing is by forming with described gate insulating film and passivating film identical materials.
7. method of making electro phoretic display device, this method may further comprise the steps:
Prepare first substrate and second substrate, wherein said first substrate includes the source region, sealant forms district and non-active area;
In the described active area of described first substrate, form grid and select lines;
On the part of comprising of described first substrate described sealant formation district and described active area, form gate insulating film;
On described gate insulating film, form semiconductor pattern and source/drain;
On described first substrate, form passivating film with described source/drain and described sealant formation district;
The pixel electrode that formation links to each other with described drain electrode;
Between described first substrate and second substrate, form electrocoating film; And
In described sealant formation district, distribute sealant,
Wherein described gate insulating film and the passivating film that described sealant is formed in the district is carried out composition so that the ditch between at least two dam shape things and the dam shape thing to be provided.
8. method according to claim 7, wherein said dam shape thing is arranged on the zone that described passivating film and gate insulating film are retained after the pattern step of described passivating film and gate insulating film, and described ditch is arranged on after the pattern step of described passivating film and gate insulating film on the described passivating film and the removed zone of gate insulating film.
9. method according to claim 7, wherein said dam shape thing forms with the stack layer of described gate insulating film and passivating film.
10. method according to claim 7, wherein said passivating film has the contact hole that exposes described drain electrode.
11. method according to claim 10, wherein described passivating film is carried out composition with provide described contact hole during carry out composition to being arranged in described passivating film and the gate insulating film that described sealant forms the district.
12. forming, method according to claim 7, wherein said sealant distinguish in the boundary member that is arranged between described active area and the non-active area.
13. method according to claim 7, wherein said sealant be dispensed on that described sealant forms the district with the contiguous part of described active area in.
14. method according to claim 7, wherein said dam shape thing and ditch be formed on that described sealant forms the district with the contiguous part of described non-active region in.
15. method according to claim 7, wherein said first substrate and second substrate respectively comprise flexible material.
CN2009101517813A 2008-12-23 2009-07-15 Electrophoretic display device and manufacturing method thereof Expired - Fee Related CN101762925B (en)

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KR10-2008-0132730 2008-12-23
KR1020080132730A KR101281868B1 (en) 2008-12-23 2008-12-23 Electrophoretic Display Device and Method for manufacturing the same

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CN101762925B CN101762925B (en) 2012-07-18

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