CN101762892B - Testing element, testing element set, liquid-crystal panel and method for detecting height of photo spacer - Google Patents

Testing element, testing element set, liquid-crystal panel and method for detecting height of photo spacer Download PDF

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Publication number
CN101762892B
CN101762892B CN2008102080467A CN200810208046A CN101762892B CN 101762892 B CN101762892 B CN 101762892B CN 2008102080467 A CN2008102080467 A CN 2008102080467A CN 200810208046 A CN200810208046 A CN 200810208046A CN 101762892 B CN101762892 B CN 101762892B
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gap
substrate
height
testing element
electrode
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CN101762892A (en
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马骏
罗熙曦
蒋顺
凌志华
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Shenzhen Haiyun Communication Co.,Ltd.
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Shanghai Tianma Microelectronics Co Ltd
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Abstract

The invention relates to a testing element which comprises a photo spacer and a groove. The photo spacer is formed on a first substrate of a liquid-crystal panel; one side of the first substrate facing to a second substrate is provided with a first electrode; the photo spacer is arranged in liquid crystal filling the gap between the first substrate and the second substrate; the groove is formed on the side surface of the second substrate facing to the first substrate and is opposite to the photo spacer; the side surface of the second substrate facing to the first substrate is provided with a second electrode; and the liquid crystal is clamped between the groove and the photo spacer. The invention also provides a testing element set, a liquid-crystal panel and a method for detecting the height of the photo spacer. The method can be used for detecting the height of the photo spacer before and/or after a box is pressed.

Description

Testing element, testing element group, the sub-height detection method of liquid crystal panel and gap
Technical field
The present invention relates to LCD manufacturing technology field, particularly a kind of testing element, testing element group, the sub-height detection method of liquid crystal panel and gap.
Background technology
Usually, be example with TFTLCD (thin film transistor liquid crystal display, Thin Film Transistor-LCD), the manufacture craft of LCD comprises: make first substrate (as color membrane substrates); Make second substrate (tft array substrate); And, described first substrate and second substrate are carried out the operation of pressure box.
Wherein, the technology of making first substrate comprises: form RGB (redgreen blue, red green blue tricolor) rete on the glass substrate after the cleaning; On described RGB rete, form pixel electrode layer (ITO, indium tin oxide), abbreviate common electrode layer in the presents as; Formation gap on described common electrode layer (photo spacer, PS).
Described gap is in order to after finishing follow-up pressure box operation, and the clearance distance of keeping between described first substrate and second substrate is fixed.Particularly, the technology of formation gap comprises: form gap rete (as organic material or glass material) on described common electrode layer; The described gap of etching rete.
The technology of making second substrate comprises: form the TFT (thin film transistor (TFT)) with grid, channel region and source/drain metal layer on the glass substrate after the cleaning; Form the protective seam that covers described glass substrate interior TFT zone and non-TFT zone; Remove the protective seam that covers described non-TFT zone; In the protective seam that covers described TFT zone, form the through hole of expose portion drain surface; Form the pixel electrode layer of filling described through hole and covering described non-TFT zone, abbreviate pixel electrode layer in the presents as.
In the practice, after pressing box, because described gap is fixed in order to the clearance distance of keeping between described first substrate and second substrate, make described gap be sandwiched between described first substrate and second substrate with pressured state (having only described gap of only a few to be in the not subjected to pressure state) usually, promptly, if gap that is formed on the described common electrode layer has free port, then after pressing box, described free port and described second substrate join; That is, be H if be formed at the height of gap on the described common electrode layer, then after pressing box, the height that is sandwiched in gap between described first substrate and second substrate is less than H.As example, as shown in Figure 1, with the protective seam 203 (comprising first protective seam and second protective seam that are formed at the processing procedure different phase) that covers scan electrode layer 202 on described gap 103 and described second substrate 201 that has formed pixel electrode layer 206 is example when joining, described gap 103 is formed on first substrate 101 (promptly, the upper bottom surface 1031 of described gap 103 joins with the common electrode layer 102 of described first substrate 101, its bottom surface 1032 joins with the protective seam 203 of described second substrate 201), and be in the liquid crystal 301 of filling described first substrate 101 and 201 gaps of described second substrate; In the practice, thick for box is 3.8 microns LCD panel, and the height of preformed described gap 103 is generally 3.9 microns, and the height of described gap 103 only is about 3.6 microns behind the box and press.
Because pressure box technology is the important step in the TFTLCD processing procedure, is paid attention to by those skilled in the art pressing box technology to detect always.And the thick homogeneity of box directly influences the display quality of TFTLCD, makes the thick homogeneity of box become and judges the key parameter of pressing box technology whether to meet product requirement.Yet, in the current actual production, when determining the thick homogeneity of box, can only be by repeatedly measuring the thick value of box of full wafer TFTLCD panel; Then, compare the thick value of each box, the difference between the thick value of each box meets predetermined standard time, determines that the thick homogeneity of box satisfies product requirement; Difference between the thick value of each box does not meet predetermined standard time, determines that the thick homogeneity of box does not satisfy product requirement.
Consider, influence and comprise the height of described gap after pressing box in the thick important parameter of box, and the height of described gap after pressing box is subjected to the influence of its height before pressing box, therefore, described gap will have a direct impact the display performance of the TFTLCD of thick homogeneity of box and formation in the homogeneity of the variation of pressing the height before and after the box; And in actual production, the difficulty that faces when considering the influence of optical effect and practical operation, can't before pressing box, detect the height of described gap, promptly, can only behind the pressure box, detect the height of described gap before pressing box, thus, the present inventor proposes, if can after pressing box, still can provide and have described gap of pressing height before the box, promptly can be after pressing box, detect press before the box height of described gap provide multiple may, in other words, need after pressing box, still can provide in the actual production and have described gap of pressing height before the box.
Current, the height of described gap can utilize optical devices such as white light interferometer directly to measure, yet, in the actual production, be equipped with the limited in one's ability of this equipment on the production line, how provide the feasible alternative means of a cover to become those skilled in the art's problem demanding prompt solution.
Summary of the invention
The invention provides a kind of testing element, can after pressing box, provide to have gap of pressing height before the box.
The invention provides a kind of testing element group, can press the height of gap of box front and back in order to acquisition.
The invention provides a kind of liquid crystal panel, can detect the homogeneity of described gap at the height of pressing the box front and back, and and then the thick homogeneity of detection box.
The invention provides the sub-height detection method in a kind of gap, can press the height of gap of box front and back in order to acquisition, and and then the thick homogeneity of detection box.
A kind of testing element provided by the invention, comprise: gap, be formed on first substrate of liquid crystal panel and have free end, described first substrate has first electrode, described liquid crystal panel has second substrate relative with described first substrate, and described free end is in the liquid crystal that is filled in gap between described first substrate and second substrate; And groove is formed at described second real estate on the side of described first substrate and relative with described gap, and described second substrate has second electrode, accompanies liquid crystal between described groove and described gap.
Alternatively, described first electrode is formed at described first real estate on the side of described second substrate, and described gap is formed on described first electrode; Alternatively, described first electrode is a common electrode layer; Alternatively, described second electrode is formed at described second real estate on the side of described first substrate, and described groove is formed on described second electrode; Alternatively, described second electrode is a kind of in scan electrode layer, source/drain metal layer or the pixel electrode layer.
A kind of LCD TEST element group provided by the invention, described testing element group comprise the different above-mentioned testing element of height of the liquid crystal that accompanies between at least two described gap and the described groove.
Alternatively, the described second electrode difference of at least two described testing elements; Alternatively, described testing element group also comprises at least one subtest element, described subtest element comprises: gap, be formed on the substrate of liquid crystal panel and have free end, a described substrate has common electrode layer, and described liquid crystal panel has another substrate relative with a described substrate, and described gap is in the liquid crystal that is filled in gap between a described substrate and described another substrate, described another substrate has auxiliary electrode, and described free end and described another substrate join; Alternatively, described subtest element also comprises: be formed on described another substrate and with the sub-groove opposite in described gap; Alternatively, described auxiliary electrode is formed at described another real estate on the side of a described substrate, and described groove is formed on the described auxiliary electrode; Alternatively, described auxiliary electrode is a kind of in scan electrode layer, source/drain metal layer or the pixel electrode layer; Alternatively, described common electrode layer is formed on the side of a described substrate, and described gap is formed on the described common electrode layer.
A kind of liquid crystal panel provided by the invention has at least one display unit, also comprises at least two discrete above-mentioned testing element groups, and each described testing element group is positioned at outside each described display unit.
The sub-height detection method in a kind of gap provided by the invention comprises:
Form above-mentioned testing element group;
Choose and drive any two testing elements in the described testing element group;
Obtain the test value C ' of first electrode described in each described testing element and the second interelectrode electric capacity;
Each described testing element is listed the expression formula of described first electrode and the second interelectrode gap height, comprise the height of the liquid crystal that accompanies between the height of gap and described gap and groove in the expression formula of described clearance height;
List the electric capacity expression formula of the expression formula that comprises described clearance height;
In conjunction with each described test value C ' and described electric capacity expression formula, obtaining at least two height with the liquid crystal that accompanies between the height of described gap and itself and groove is the equation of variable;
Each described equation of simultaneous is found the solution the height of gap.
Alternatively, described electric capacity expression formula is:
C 0 = C 1 + C 2 = C 3 / / C 4 + C 2 = ϵ 1 s 1 h 1 / / ϵ 2 ⊥ s 1 h 2 + ϵ 2 ⊥ s 2 h 1 + f 2 ;
Described first electrode and the second interelectrode capacitor C 0Comprise first capacitor C in parallel 1With second capacitor C 2, described first capacitor C 1The 3rd capacitor C for series connection 3With the 4th capacitor C 4, described the 3rd capacitor C 3With described gap is medium, and its specific inductive capacity is ε 1, highly be h 1Described the 4th capacitor C 4With the liquid crystal that accompanies between described gap and described groove is medium, and its specific inductive capacity is ε 2 ⊥, highly be h 2Described first capacitor C 1The pole plate area be the floorage S of described gap 1Described second capacitor C 2With the liquid crystal of filling in described first electrode and second interelectrode gap is medium, and the height in described gap is h 1+ h 2Described second capacitor C 2The pole plate area be the difference S of the floorage of described groove and described gap 2
Compared with prior art, technique scheme has the following advantages:
The testing element that technique scheme provides, by on the side of described first substrate, being formed with and the sub-groove opposite in described gap at described second real estate, and between described gap and described groove, accompany liquid crystal, the height of gap before pressing box can still can be provided behind the pressure box, can make electric capacity obtain to press the height of box anterior diastema to become possibility by testing between described first electrode and second electrode.
The testing element group that technique scheme provides, by comprising at least two testing elements within it, and the height of the liquid crystal that accompanies between gap described in each described testing element and the described groove is different, can between each described testing element, form the variation of medium, be beneficial to the variation that obtains described first electrode and second interelectrode capacitance, then can utilize the electric capacity of variation to obtain Simultaneous Equations, and obtain the height of gap before and after the pressure box.
The liquid crystal panel that technique scheme provides, by comprising the testing element group that separates from it, can detect homogeneity and the box thick homogeneity of described gap by the height of gap before and after the pressure box at the corresponding different place, described testing element group position of detection at the height of pressing the box front and back.
The sub-height detection method in the gap that technique scheme provides, because the height of the liquid crystal that accompanies between of gap described in each described testing element and the described groove is different, make the height of described first electrode and second interelectrode gap change, and the height in described gap is the function of the height of gap, can be by the electric capacity of the different testing element of test, obtain to find the solution the system of equations of gap son height in conjunction with each test value C ' with the electric capacity expression formula of the height that comprises described first electrode and second interelectrode gap, then, find the solution described system of equations, can obtain the height of gap.
Description of drawings
Fig. 1 presses the structural representation of box-like attitude for liquid crystal panel in the explanation prior art;
Fig. 2-Fig. 4 for the explanation testing element first embodiment of the present invention-testing element the 3rd embodiment the pressure box after structural representation;
Fig. 5 is the structure vertical view of explanation testing element the 3rd embodiment of the present invention;
Fig. 6-Fig. 8 for the explanation testing element the 4th embodiment of the present invention-testing element the 6th embodiment the pressure box after structural representation;
Fig. 9 is the structural representation of testing element group among explanation the present invention;
Figure 10 is the synoptic diagram of each testing element component cloth among explanation the present invention;
Figure 11-Figure 14 for the explanation subtest element embodiment of the present invention the pressure box after structural representation.
Embodiment
Although below with reference to accompanying drawings the present invention is described in more detail, wherein represented the preferred embodiments of the present invention, be to be understood that those skilled in the art can revise the present invention described here and still realize advantageous effects of the present invention.Therefore, following description is appreciated that extensive instruction for those skilled in the art, and not as limitation of the present invention.
For clear, whole features of practical embodiments are not described.In the following description, be not described in detail known function and structure, because they can make the present invention because unnecessary details and confusion.Will be understood that in the exploitation of any practical embodiments, must make a large amount of implementation details, for example, change into another embodiment by an embodiment according to relevant system or relevant commercial restriction to realize developer's specific objective.In addition, will be understood that this development may be complicated and time-consuming, but only be routine work to those skilled in the art.
In the following passage, with way of example the present invention is described more specifically with reference to accompanying drawing.Will be clearer according to following explanation and claims advantages and features of the invention.It should be noted that accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only in order to convenient, the purpose of the aid illustration embodiment of the invention lucidly.
General plotting of the present invention is: at first, be provided to press and still have gap of pressing height before the box behind the box; Then, in the height change of pressing the box front and back, detect the thick homogeneity of box of described TFTLCD panel by calculated gap; And by on the TFTLCD panel, increasing the testing element group, and make each the described testing element that comprises in it between the first identical substrate and second substrate, form the variation of medium, utilize the variation of consequent first electrode and second interelectrode capacitance to obtain Simultaneous Equations, find the solution the height of gap of pressing the box front and back.
Because when using conventional art, described gap is sandwiched between described first substrate and second substrate with pressured state usually, therefore, be after pressing box, to detect the height of pressing gap before the box, at first need be formed on to press behind the box still and be sandwiched in gap between described first substrate and second substrate with pressured state not; In addition, should also provide the testing element group that comprises the testing element that at least two media change, to obtain to find the solution the Simultaneous Equations of the height of pressing gap before and after the box.
Thus, the invention provides a kind of testing element, can guarantee behind the pressure box, still can provide the height of gap before pressing box.
Described testing element comprises: gap, be formed on first substrate of liquid crystal panel and have free end, described first substrate has first electrode, described liquid crystal panel has second substrate relative with described first substrate, and described free end is in the liquid crystal that is filled in gap between described first substrate and second substrate; And groove is formed at described second real estate on the side of described first substrate and relative with described gap, and described second substrate has second electrode, accompanies liquid crystal between described groove and described gap.Wherein, described first electrode can be common electrode layer; Described second electrode can be a kind of in scan electrode layer, source/drain metal layer or the pixel electrode layer.
In conjunction with practice as can be known, as example, the basic parameter so as to each rete of comprising in the liquid crystal panel of describing embodiment among the present invention comprises: described common electrode layer and be 4.35 microns in order to the spacing between the glass substrate that forms second substrate; The height of preformed described gap is generally 3.9 microns, and the height of described scan electrode layer is about 0.25 micron, and (wherein, the height of first protective seam is about 0.3 micron and the height that covers the protective seam of described scan electrode layer is about 0.5 micron; The height of second protective seam is about 0.3 micron), the height of pixel electrode layer is about 0.05 micron, and the height of source/drain metal layer metallic diaphragm is about 0.2 micron, and the height of channel region semiconductor rete is about 0.05 micron.For setting forth conveniently, when describing each embodiment, the thickness that comprises each rete in the liquid crystal panel that relates to all is example with the above-mentioned parameter; It should be noted that above-mentioned basic parameter is the example value for ease of describing only, in the practice, above-mentioned basic parameter can change or make amendment according to product and technological requirement, and does not influence the enforcement of technical scheme claimed among the present invention.
Particularly; first embodiment as testing element of the present invention; than conventional art as shown in Figure 1; improvement of the present invention is: as shown in Figure 2; increased in the protective seam 203 that the bottom surface 1032 with described gap 103 joins that (described protective seam 203 is positioned on second substrate 201 with described gap son 103 groove opposite 207; covering is formed at the scan electrode layer 202 on described second substrate 201; and comprise first protective seam 2032 and second protective seam 2033 that are formed at the processing procedure different phase; particularly; after described first protective seam 2032 can be formed at the forming process of described scan electrode layer 202 in proper order, and after described second protective seam 2033 can be formed at the forming process of TFT in proper order).
At this moment; because the height of preformed described gap 103 only is 3.9 microns; and the height of described scan electrode layer 202 is about 0.25 micron; the height that covers the protective seam 203 of described scan electrode layer 202 is about 0.5 micron; therefore; as long as in highly being about 0.5 micron protective seam 203, form height, can obtain after pressing box still to be sandwiched in gap 103 between described first substrate 101 and second substrate 201 with pressured state not greater than 3.9-(4.35-0.25-0.5)=0.3 micron groove 207.In the practice, for making work simplification and convenience of calculation, the height of described groove 207 is taken as the height of described protective seam 203 usually.In the subsequent embodiment, for ease of setting forth, the height of described groove 207 all is taken as the height of described protective seam 203.Follow-up also will the explanation when described groove 207 does not adopt this special height, improving one's methods when calculating electric capacity.
After forming described depression, experience the brilliant operation of follow-up filling again, between described gap and described groove, will accompany liquid crystal.
Thus in the testing element of Xing Chenging, with be formed at common electrode layer 102 on described first substrate 101 be top crown (promptly, first electrode), with be formed at scan electrode layer 202 on described second substrate 201 be bottom crown (promptly, second electrode), media such as described top crown and bottom crown and gap 103 that accompanies between the two, liquid crystal 301 and protective seam 203 constitute electric capacity; After providing signal voltage between the described upper and lower pole plate, as, provide high frequency or with driving voltage with frequently ac signal, according to Z=L/ ω C (L and ω are the intrinsic parameter of ac signal), can be according to the described capacitor C of the anti-release of the impedance Z that records.
The following describes the relation between the height of described electric capacity and described gap.
At this moment, in the capacitor C of 102 of scan electrode layer 202 described in testing element first embodiment and common electrode layer 0By first capacitor C 1, second capacitor C 2With the 3rd capacitor C 3Parallel connection draws, that is, and and described capacitor C 0Expression formula be C 0=C 1+ C 2+ C 3
Described first capacitor C 1The 4th capacitor C for series connection 4With the 5th capacitor C 5, described the 4th capacitor C 4With described gap 103 is medium, and the height of described gap 103 is h 1(that is, pressing the height of the preceding described gap of box 103); Described the 5th capacitor C 5With described gap son 103 and 207 liquid crystal that accompany of described groove 301 is medium, and the height of described liquid crystal 301 is h 2Described first capacitor C 1The pole plate area be the floorage S of described gap 103 1(in the presents, described floorage can be the area of going to the bottom that upper base area that described gap son 103 and first electrode 102 joins or itself and second electrode 202 join, or the equivalent area of choosing according to the calculating needs corresponding to the described upper base area or the area of going to the bottom).
Described second capacitor C 2With the liquid crystal 301 of filling in described first electrode 102 and 202 gaps of second electrode is medium, and the height in described gap is h 1+ h 2Described second capacitor C 2The pole plate area be described groove 207 and the difference S of the floorage of described gap 103 2
Described the 3rd capacitor C 3The 6th capacitor C for series connection 6With the 7th capacitor C 7, described the 6th capacitor C 6With the liquid crystal 301 of filling in described first electrode 102 and 203 slits of protective seam is medium, and the height in described slit is h 1+ h 2-0.5 micron; Described the 7th capacitor C 7With described protective seam 203 is medium, and the height of described protective seam 203 is 0.5 micron; Described the 3rd capacitor C 3The pole plate area be the area S of described scan electrode layer 202 0-S 1-S 2
That is, C 0 = C 1 + C 2 + C 3 = C 4 / / C 5 + C 2 + C 6 / / C 7
= ϵ 1 s 1 h 1 / / ϵ 2 ⊥ s 1 h 2 + ϵ 2 ⊥ s 2 h 1 + h 2 + ϵ 2 ⊥ ( s 0 - s 1 - s 2 ) h 1 + h 2 - 0.5 / / ϵ 3 ( s 0 - s 1 - s 2 ) 0.5 - - - ( 1 )
Above-mentioned each pole plate area S 0, S 1And S 2, and, the DIELECTRIC CONSTANT of gap of selecting for use 103 1, liquid crystal 301 the DIELECTRIC CONSTANT of vertical direction 2 ⊥DIELECTRIC CONSTANT with protective seam 203 3Be known, C 0Can directly record, have only h 1And h 2Be the unknown, that is, record the electric capacity of above-mentioned test cell after, can obtain with h 1And h 2Linear equation in two unknowns (1) for variable.
In addition, on the basis of above-mentioned testing element embodiment, the structure of conversion testing element, as, make pixel electrode layer 206 cover described groove 207, can form second embodiment of testing element of the present invention, as shown in Figure 3, at this moment, be top crown (that is first electrode) with the common electrode layer 102 that is formed on described first substrate 101, with the pixel electrode layer 206 that covers described groove 207 be bottom crown (promptly, second electrode), be medium with gap 103, liquid crystal 301 and the protective seam 203 that accompanies between described top crown and the bottom crown, constitute electric capacity; After providing signal voltage between the described upper and lower pole plate, as, provide high frequency or with driving voltage with frequently ac signal, still can release described electric capacity according to the impedance that records is anti-.
With similar among testing element first embodiment, at this moment, the capacitor C that described pixel electrode layer 206 and common electrode layer are 102 01Expression formula be: C 01=C 11+ C 21+ C 31
Described first capacitor C 11By the 8th capacitor C 8With the 9th capacitor C 9Series connection draws, described the 8th capacitor C 8With described gap 103 is medium, and the height of described gap 103 is h 1Described the 9th capacitor C 9With described gap son 103 and 207 liquid crystal that accompany of described groove 301 is medium, and the height of described liquid crystal 301 is h 2-0.05 micron; Described first capacitor C 11The pole plate area be the floorage S of described gap 103 1
Described second capacitor C 21With the liquid crystal 301 of filling in described first electrode 102 and 206 gaps of described pixel electrode layer is medium, and the height in described gap is h 1+ h 2-0.05 micron; Described second capacitor C 21The pole plate area be described groove 207 and the difference S of the floorage of described gap 103 2
Described the 3rd capacitor C 31With described first electrode 102 with to cover the liquid crystal 301 of filling in 206 slits of pixel electrode layer of described protective seam 203 be medium, the height in described slit is h 1+ h 2-0.05-0.5=h 1+ h 2-0.55 micron; Described the 3rd capacitor C 31The pole plate area for the pixel electrode layer 206 that covers described protective seam 203 at the projected area S that is parallel to the glass substrate plane 01
Then C 01 = C 11 + C 21 + C 31 = C 8 / / C 9 + C 21 + C 31
= ϵ 1 s 1 h 1 / / ϵ 2 ⊥ s 1 h 2 - 0.05 + ϵ 2 ⊥ s 2 h 1 + h 2 - 0.05 + ϵ 2 ⊥ s 01 h 1 + h 2 - 0.55 - - - ( 2 )
Above-mentioned each pole plate area S 01, S 1And S 2, and, the DIELECTRIC CONSTANT of gap of selecting for use 103 1DIELECTRIC CONSTANT with the vertical direction of liquid crystal 301 2 ⊥Be known, C 01Can directly record, have only h 1And h 2Be the unknown, that is, record the electric capacity of above-mentioned test cell after, can obtain with h 1And h 2Linear equation in two unknowns (2) for variable.What need emphasize is in the practice, can pass through control S 01As best one can little, the accuracy when estimating to simplify calculating and enhancing.
With described linear equation in two unknowns (1) and (2) simultaneous is system of equations, can try to achieve h 1And h 2Separate, that is, can obtain to press the height of described gap 103 before the box.
It should be noted that; when the height of the height of described groove 207 and described protective seam 203 is inequality (in the presents; the difference that term " identical " means both can be left in the basket in the scope that technology allows); not removed protective seam only is the influence that above-mentioned electric capacity expression formula produces: in testing element first embodiment, in described first capacitor C 1In also should to connect with described not removed protective seam be medium and electric capacity with identical upper and lower pole plate, the height of described not removed protective seam is 4.35-0.25-h 1-h 2In testing element second embodiment, in described first capacitor C 11In also should to connect with described not removed protective seam be medium and electric capacity with identical upper and lower pole plate, the height of described not removed protective seam is 4.35-0.25-h 1-h 2-0.05 micron.That is when the height of described groove is got less than any value of the height of described protective seam, can be the height that system of equations to be pressed described gap before the box still, by simultaneous; Similarly, when described gap and the described first electrode interbody spacer other materials layer, can determine of the influence of described other materials layer, repeat no more according to above-mentioned instruction to the electric capacity expression formula.
The 3rd embodiment as testing element of the present invention; as shown in Figure 4; described groove 207 can be formed on the protective seam 203 that does not cover described scan electrode layer 202; at this moment; need with the pixel electrode layer 206 that covers described groove 207 bottom crown as testing element; after providing signal voltage between the described upper and lower pole plate, still can instead release described electric capacity by through hole 2031 according to the impedance that records.At this moment, the capacitor C of 206 of described common electrode layer 102 and pixel electrode layers 02Expression formula be: C 02=C 12+ C 22+ C 32
Described first capacitor C 12The 10th capacitor C for series connection 102With the 11st capacitor C 112, described the 10th capacitor C 102With described gap 103 is medium, and the height of described gap 103 is h 1Described the 11st capacitor C 112With described gap son 103 and 207 liquid crystal that accompany of described groove 301 is medium, and the height of described liquid crystal 301 is 0.25+h 2-0.05 micron; Described first capacitor C 12The pole plate area be the floorage S of described gap 103 1
Described second capacitor C 22With the liquid crystal 301 of filling in described first electrode 102 and 206 gaps of described pixel electrode layer is medium, and the height in described gap is h 1+ h 2+ 025-0.05 micron; Described second capacitor C 22The pole plate area be described groove 207 and the difference S of the floorage of described gap 103 2
Described the 3rd capacitor C 32For being bottom crown with the pixel electrode layer with variant height 206 that covers described protective seam 203, being the parallel connection of each electric capacity of forming of medium with the liquid crystal 301 of filling in described first electrode 102 and 206 slits of described pixel electrode layer, guidance according to previous embodiment, those skilled in the art can calculate the height in described slit, do not repeat them here; Described the 3rd capacitor C 32The pole plate area for the pixel electrode layer 206 that covers described protective seam 203 at the projected area S02 that is parallel to the glass substrate plane.
After recording the electric capacity of described test cell, still can obtain with h 1And h 2Linear equation in two unknowns for variable.
Is system of equations with described linear equation in two unknowns with (1) or (2) simultaneous, still can obtain to press the height of the preceding described gap of box.
For ease of understanding, the vertical view of the testing element of corresponding described testing element the 3rd embodiment as shown in Figure 5, with the pixel electrode layer 206 that covers groove 207 (not shown) as bottom crown, with the common electrode layer 102 that is formed with described gap 103 as the top crown (not shown), the upper bottom surface 1031 and the described top crown of described gap 103 join, the bottom surface 1032 of described gap 103 is relative with described groove 207, links to each other with the scan electrode layer 202 that signal voltage is provided by conductive through hole 2031 as the pixel electrode layer 206 of bottom crown.
It should be noted that, when finding the solution the height of pressing described gap before the box according to the electric capacity that records, only need the electric capacity expression formula is decomposed into the combination of series and parallel of the electric capacity of the medium with identical upper and lower pole plate and differing heights, wherein, described top crown can be common electrode layer; Described bottom crown can be the scan electrode layer that is formed on the glass substrate and covers a kind of in the pixel electrode layer of described scan electrode layer or glass substrate; Described medium can be the various materials that are sandwiched between described upper and lower pole plate, as, gap, liquid crystal or protective seam etc.According to the instruction of testing element first to the 3rd embodiment, those skilled in the art can choose the position of described testing element neatly when designing, with flexibly definite electric capacity expression formula, and then the system of equations of acquisition simultaneous, find the solution the height of pressing the preceding described gap of box.
A kind of in the pixel electrode layer that among the above-mentioned testing element embodiment, the bottom crown of choosing when calculating the electric capacity of testing element is respectively the scan electrode layer that is formed among the TFT on the glass substrate, cover described scan electrode layer or glass substrate.In fact, described bottom crown also can be chosen the source/drain metal layer among the TFT or cover the pixel electrode layer of described source/drain metal layer.At this moment, owing to be pre-formed channel layer (active layer) on second substrate, consider the thickness of the corresponding rete of choosing in the actual production, as can be known, in the practice, if described common electrode layer and be 4.35 microns in order to the spacing between the glass substrate that forms second substrate, and the height of preformed described gap is 3.9 microns, the height of described scan electrode layer is 0.25 micron, and the height that covers the protective seam of described scan electrode layer is about 0.5 micron, the height of pixel electrode layer is 0.05 micron, the height of source/drain metal layer is 0.2 micron, when the height of channel region active layer is 0.05 micron, even in the protective seam that covers described source/drain metal layer, form the height groove identical with the height of described protective seam, also only can obtain to press behind the box highly is 3.8 microns gap, still can't obtain pressing the height of box anterior diastema (to it should be noted that, if the height of preformed described gap is 3.6 microns, after then in the protective seam that covers described source/drain metal layer, forming the height groove identical with the height of described protective seam, can obtain pressing the height of box anterior diastema), therefore, at this moment, the element that comprises described first electrode and second electrode can constitute the subtest element, utilizes described subtest element can obtain to press the height of described gap behind the box; Described subtest element comprises: gap, be formed on the substrate of liquid crystal panel and have free end, a described substrate has common electrode layer, described liquid crystal panel has another substrate relative with a described substrate, described gap is in the liquid crystal that is filled in gap between a described substrate and described another substrate, described another substrate has auxiliary electrode, and described free end and described another substrate join.Described subtest element also can comprise: be formed on described another substrate and with the sub-groove opposite in described gap; Described auxiliary electrode is formed at described another real estate on the side of a described substrate, and described groove is formed on the described auxiliary electrode; Described common electrode layer is formed on the side of a described substrate, and described gap is formed on the described common electrode layer.
Behind each electrode applied signal voltage of described subtest element, still can obtain electric capacity corresponding to described upper and lower electrode, according to the similar method of previous embodiment, in conjunction with the test value and the electric capacity expression formula that comprises the height of described common electrode layer and auxiliary electrical pole clearance of each described electric capacity, can find the solution the height of pressing box post gap.
In the following embodiments, in the time of will providing described auxiliary electrode and be respectively scan electrode layer, source/drain metal layer or pixel electrode layer, the structure explanation of described subtest element.
As Fig. 6-shown in Figure 7, the the 4th to the 5th embodiment as testing element of the present invention, described bottom crown is chosen source/drain metal layer 205 among the TFT (before forming described source/drain metal layer 205, be pre-formed channel region rete 204) or when covering the pixel electrode layer 206 of described source/drain metal layer 205, can be formed with on described second electrode and described gap son 103 groove opposite 207.It should be noted that, need not on described second electrode, to form described groove 207, only need when finding the solution, to consider of the influence of described protective seam 203 as capacitor dielectric, also can find the solution the height of pressing box post gap, but, form described groove 207, and be bottom crown with the pixel electrode layer 206 that covers described groove 207, described gap son 103 is joined with described bottom crown, and then, on can reducing, the kind of the medium that comprises between bottom crown, as, in the subtest element shown in Figure 7 on, the medium that comprises between bottom crown just can only be gap son 103 and liquid crystal 301, by optimizing technology, reduce to cover the area of the pixel electrode layer 206 of described protective seam 203, be beneficial to and accurately find the solution the height of pressing described gap behind the box; Behind each electrode applied signal voltage of described subtest element, the electric capacity of acquisition can be only for being the electric capacity of medium with described gap and electric capacity after the electric capacity that is medium is in parallel with described liquid crystal, can simplify calculating.
In addition; as shown in Figure 8; as the 6th embodiment of testing element of the present invention, when described gap is sandwiched in described first electrode 102 and is formed at pixel electrode layer 206 (second electrode) on the protective seam 203 that covers scan electrode layer 202, still can form described subtest element.Behind each electrode applied signal voltage of described subtest element, still can record the capacitor C between upper and lower pole plate via through hole 2031 03, in conjunction with comprising the height h that presses gap behind the box 13The electric capacity expression formula, can calculate the height (being about 3.55 microns) of pressing gap behind the box.Particularly, the specific inductive capacity of described gap 103 is ε 1, floorage is S 1, the specific inductive capacity of the vertical component of described liquid crystal 301 is ε 2 ⊥, its relative pole plate area is the difference S of the floorage of described bottom crown 206 and described gap 103 02, highly can be taken as h between pole plate with described liquid crystal 301 electric capacity that is medium 13Or consider equivalent area after the floorage of described through hole 2031; To get h 13Be example,
C 03 = ϵ 1 s 1 h 13 + ϵ 2 ⊥ s 02 h 13 - - - ( 3 )
Above-mentioned each pole plate area S 1And S 02, and, the DIELECTRIC CONSTANT of gap of selecting for use 103 1DIELECTRIC CONSTANT with the vertical direction of liquid crystal 301 2 ⊥Be known, C 03Can directly record, have only h 13Be the unknown, that is, record the electric capacity of above-mentioned test cell after, can obtain with h 13For the linear equation with one unknown (3) of variable, find the solution described equation, can obtain to press the height of gap behind the box.
In the practice, to detecting the helpful parameter of the thick homogeneity of box is the changing value of pressing the height of gap before and after the box, therefore, for detecting the thick value of box of the thick detection zone of arbitrary box, need to obtain the changing value of the height of gap before and after the pressure box in the thick detection zone of same described box, promptly, need use the testing element and the subtest element of the thick detection zone of corresponding same described box, thus, as shown in Figure 9, the invention provides a kind of testing element group, described testing element group comprises the different testing element 30 of height of the liquid crystal that accompanies between at least two described gap and the described groove, also can comprise at least one subtest element 40 (, spaced 3 testing elements 30 and 3 subtest elements 40 only being shown among Fig. 9) as example.In some embodiment of the present invention, the second electrode difference of at least two described testing elements of described testing element group.For example, second electrode of a kind of testing element of the present invention is the scan electrode layer, and then second electrode of another kind of testing element of the present invention is a kind of in source/drain metal layer or the pixel electrode layer.The number of described testing element 30 and subtest element 40 and arrangement can change flexibly according to product and arts demand.Can between the first identical substrate and second substrate, form the variation of medium, be beneficial to the variation that obtains interelectrode capacitance, can utilize the electric capacity of variation to obtain Simultaneous Equations then, and obtain the height of gap before and after the pressure box.
When utilizing described testing element group to detect the thick homogeneity of box, as shown in figure 10, each described testing element group can be distributed on the liquid crystal panel discretely, and be positioned at outside each display unit, can be when utilizing its detection box thick, the box that acquisition is positioned at diverse location place on the described liquid crystal panel is thick, can detect the thick homogeneity of box between diverse location; That is, the invention provides a kind of liquid crystal panel, have at least one display unit 20, also comprise at least two above-mentioned testing element groups 22, each described testing element group 22 is positioned at outside each described display unit 20.
In addition, the present invention also provides a kind of gap sub-height detection method, comprising: form the testing element group; Choose and drive any two testing elements in the described testing element group; Obtain the test value C ' of first electrode described in each described testing element and the second interelectrode electric capacity; Each described testing element is listed the expression formula of described first electrode and the second interelectrode gap height, comprise the height of the liquid crystal that accompanies between the height of gap and described gap and groove in the expression formula of described clearance height; List the electric capacity expression formula of the expression formula that comprises described clearance height; In conjunction with each described test value C ' and described electric capacity expression formula, obtaining at least two height with the liquid crystal that accompanies between the height of described gap and itself and groove is the equation of variable; Each described equation of simultaneous is found the solution the height of gap.
In the practice, described gap comprises main gap (main PS) and auxiliary air gap (sub PS), fixes in order to keep between described first substrate and second substrate gap jointly; Wherein, before the pressure box, the height of described auxiliary air gap can be equal to or less than the height of described main gap.
It should be noted that, above-mentioned testing element first to the 3rd embodiment all is suitable for described main gap and auxiliary air gap, just, be applicable to the described auxiliary air gap period of the day from 11 p.m. to 1 a.m, the height that is sandwiched in the liquid crystal between described groove and described gap is applicable to that the described main gap period of the day from 11 p.m. to 1 a.m is higher; When the height of described auxiliary air gap equaled the height of described main gap, above-mentioned testing element the 4th to the 6th embodiment all was suitable for (to suitable 6-Fig. 8 that sees also of described auxiliary air gap) to described main gap and auxiliary air gap; When the height (as 3.6 microns) of described auxiliary air gap less than as described in during the height (being 3.9 microns as previously mentioned) of main gap, if Fig. 6-testing element the 4th and the 5th embodiment shown in Figure 7 is applicable to described main gap, when then described bottom crown is chosen the source/drain metal layer among the TFT or is covered the pixel electrode layer of described source/drain metal layer, as Figure 11-shown in Figure 12, (among Figure 11 source-drain electrode 205 at described second electrode; Among Figure 12 for pixel electrode layer 206) on be formed with described auxiliary air gap 104 groove opposite 207 after, still can obtain to press the height (and after in the 4th and the 5th embodiment, only can obtaining to press box the height of described main gap) of described auxiliary air gap before the box; And as Figure 13-shown in Figure 14, described auxiliary air gap 104 is sandwiched in described first electrode 102 and is formed at the protective seam 203 that covers scan electrode layer 202 or during thereon pixel electrode layer 206 (auxiliary electrode) of position, can forms described subtest element; But, when described auxiliary air gap get littler height (as, less than 3.6 microns) time, also can form described testing element.Based on aforementioned instruction, the method to the sub-design test element of described auxiliary air gap, testing element group, formation liquid crystal panel and detector gap height repeats no more.
It should be noted that, technical scheme provided by the invention obviously is applicable to COA (Color Filteron Array, color film on the array), TOC (TFT on Color Filter, color film under the TFT), and AOC (Array on Color Filter, color film under the array) processing procedure such as, each rete can be determined according to the instruction that the foregoing description provides the influence of the electric capacity that records, repeat no more.
Although the present invention has been described and has enough described embodiment in detail although describe by the embodiment at this, the applicant does not wish by any way the scope of claims is limited on this details.Other to those skilled in the art advantage and improvement are conspicuous.Therefore, relative broad range the invention is not restricted to represent and the specific detail of describing, equipment and the method and the illustrative example of expression.Therefore, can depart from these details and do not break away from the spirit and scope of the total inventive concept of applicant.

Claims (14)

1. a testing element group comprises testing element, and described testing element comprises:
Gap, be formed on first substrate of liquid crystal panel and have free end, described first substrate has first electrode, and described liquid crystal panel has second substrate relative with described first substrate, and described free end is in the liquid crystal that is filled in gap between described first substrate and second substrate; And,
Groove is formed at described second real estate on the side of described first substrate and relative with described gap, and described second substrate has second electrode, accompanies liquid crystal between described groove and described gap;
Wherein, described testing element group comprises the different described testing element of height of the liquid crystal that accompanies between at least two described gap and the described groove.
2. testing element group according to claim 1 is characterized in that: described first electrode is formed at described first real estate on the side of described second substrate, and described gap is formed on described first electrode.
3. testing element group according to claim 2 is characterized in that: described first electrode is a common electrode layer.
4. according to claim 1 or 2 or 3 described testing element groups, it is characterized in that: described second electrode is formed at described second real estate on the side of described first substrate, and described groove is formed on described second electrode.
5. testing element group according to claim 4 is characterized in that: described second electrode is a kind of in scan electrode layer, source/drain metal layer or the pixel electrode layer.
6. testing element group according to claim 1 is characterized in that, the described second electrode difference of at least two described testing elements, and described second electrode is scan electrode layer, source/drain metal layer or pixel electrode layer.
7. testing element group according to claim 1, it is characterized in that, described testing element group also comprises at least one subtest element, described subtest element comprises: gap, be formed on first substrate of liquid crystal panel and have free end, described first substrate has first electrode, described liquid crystal panel has second substrate relative with described first substrate, described gap is in the liquid crystal that is filled in gap between described first substrate and described second substrate, described second substrate has second electrode, and described free end and described second substrate join.
8. testing element group according to claim 7 is characterized in that, described subtest element also comprises: be formed on described second substrate and with the sub-groove opposite in described gap.
9. testing element group according to claim 8 is characterized in that: described second electrode is formed at described second real estate on the side of described first substrate, and described groove is formed on described second electrode.
10. testing element group according to claim 9 is characterized in that: described second electrode is a kind of in scan electrode layer, source/drain metal layer or the pixel electrode layer.
11. testing element group according to claim 7 is characterized in that: described first electrode is formed on the side of described first substrate, and gap of described subtest element is formed on described first electrode.
12. a liquid crystal panel has at least one display unit, it is characterized in that, also comprises at least two as each described discrete testing element group among the claim 1-11, each described testing element group is positioned at outside each described display unit.
13. the sub-height detection method in gap is characterized in that, comprising:
Form as each described testing element group among the claim 1-11;
Choose and drive any two testing elements in the described testing element group;
Obtain the test value C ' of first electrode described in each described testing element and the second interelectrode electric capacity;
Each described testing element is listed the expression formula of described first electrode and the second interelectrode gap height, comprise the height of the liquid crystal that accompanies between the height of gap and described gap and groove in the expression formula of described clearance height;
List the electric capacity expression formula of the expression formula that comprises described clearance height;
In conjunction with each described test value C ' and described electric capacity expression formula, obtaining at least two height with the liquid crystal that accompanies between the height of described gap and itself and groove is the equation of variable;
Each described equation of simultaneous is found the solution the height of gap.
14. the sub-height detection method in gap according to claim 13 is characterized in that, described electric capacity expression formula is: C 0 = C 1 + C 2 = C 3 / / C 4 + C 2 = ϵ 1 s 1 h 1 / / ϵ 2 ⊥ s 1 h 2 + ϵ 2 ⊥ s 2 h 1 + h 2 ;
Described first electrode and the second interelectrode capacitor C 0Comprise first capacitor C in parallel 1With second capacitor C 2, described first capacitor C 1The 3rd capacitor C for series connection 3With the 4th capacitor C 4, described the 3rd capacitor C 3With described gap is medium, and its specific inductive capacity is ε 1, highly be h 1Described the 4th capacitor C 4With the liquid crystal that accompanies between described gap and described groove is medium, and its specific inductive capacity is ε 2 ⊥, highly be h 2Described first capacitor C 1The pole plate area be the floorage S of described gap 1Described second capacitor C 2With the liquid crystal of filling in described first electrode and second interelectrode gap is medium, and the height in described gap is h 1+ h 2Described second capacitor C 2The pole plate area be the difference S of the floorage of described groove and described gap 2
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