CN101762174B - Method for recycling heat energy from returned cooling water in production of polysilicon - Google Patents
Method for recycling heat energy from returned cooling water in production of polysilicon Download PDFInfo
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- CN101762174B CN101762174B CN200910312257XA CN200910312257A CN101762174B CN 101762174 B CN101762174 B CN 101762174B CN 200910312257X A CN200910312257X A CN 200910312257XA CN 200910312257 A CN200910312257 A CN 200910312257A CN 101762174 B CN101762174 B CN 101762174B
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- water
- heat energy
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- cooling water
- polysilicon
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/25—Process efficiency
Abstract
The invention relates to a method for recycling heat energy from returned cooling water in the production of polysilicon, belonging to the production field of polysilicon. In order to solve technical problem, the invention provides a method for recycling heat energy from returned cooling water in the production of polysilicon, which has high utilization rate of recycling heat energy from the returned cooling water. The method for recycling heat energy from returned cooling water in the production of polysilicon comprises the following steps: a, transfer of heat energy: the returned cooling water is adopted to concentrate lithium bromide dilute solution; b, release of heat energy: the concentrated lithium bromide solution is sprayed by water and the heat discharged therefrom is used to heat water to result in superheated water from 138 to 145 DEG C; and c, preparation of high temperature saturated steam: the superheated water is added to a flash device in order to instantaneously gasify the superheated water to the saturated steam from 128 to 132 DEG C. The method according to the invention has the advantages of: reducing the large use amount of cooling water for plate heat exchange, saving water resource, providing stable and excellent heat source for polysilicon, lowering the use amount of steam, economizing on energy and being favourable for environmental protection.
Description
Technical field
The present invention relates to heat energy from returned cooling water recoverying and utilizing method in the production of polysilicon, belong to field of polysilicon production.
Background technology
Silicon rod can produce a large amount of heats in the polysilicon production process, need cool off polycrystalline silicon reducing furnace with cooling water, can produce a large amount of cooling backwater (the cooling backwater temperature is 105～115 ℃) and a large amount of waste heats in the process of cooling reduction furnace.Cooling backwaters a large amount of in traditional polysilicon process mainly cool off with extra cooling water by heat exchanger, have so just wasted a large amount of heat energy.Also there is the small part polysilicon process to adopt the cooling backwater that produces to carry out flash distillation, produce a spot of low-pressure steam, again low-pressure steam is reused other place, though the method has been utilized partial heat energy, but the water temperature to cooling backwater is had relatively high expectations, and the steam pressure that produces is not high, and is lower to the utilization rate of heat energy yet.
Summary of the invention
Technical problem to be solved by this invention provides heat energy from returned cooling water recoverying and utilizing method in a kind of production of polysilicon, and this method is higher to the heat energy from returned cooling water recovery utilization rate.
The heat energy from returned cooling water recoverying and utilizing method comprises the steps: in the production of polysilicon of the present invention
A, heat energy shift: adopt cooling backwater (the cooling backwater temperature is 105～115 ℃) that bromize lithium dilute solution (the bromize lithium dilute solution mass concentration is preferably 20～40%) is concentrated; The be heated back evaporation of the moisture of bromize lithium dilute solution, the mass concentration of bromize lithium dilute solution can be concentrated into 60～70% from 20～40%, and the cooling backwater temperature is reduced to about 80 ℃ by 105～115 ℃;
B, heat energy discharge: the lithium-bromide solution after the water spray concentrates adds the superheated water (pressure is about 0.26MPa) that hot water obtains 138～145 ℃ with liberated heat;
C, preparation high temperature saturated vapor: superheated water is added in the flash distillation plant, and making its moment gasification is 128～132 ℃ saturated vapor (saturated vapor pressure is about 0.175Mpa).
Wherein, it is too much to concentrate thick lithium-bromide solution shower water, then can reduce liberated heat, if shower water is very few, and liberated heat deficiency then, lithium-bromide solution to the lithium-bromide solution mass concentration after the preferred water spray of above-mentioned b step woods concentrates is 20～40%.
The temperature and the saturated vapor pressure of the saturated vapor of above-mentioned c step preparation are higher, can be as the thermal source in the production of polysilicon.As: the gained saturated vapor as thermal source heating chlorosilane, is obtained chlorosilane gas and condensed water (temperature is 128～132 ℃), and condensed water returns the b step cycle and uses, and obtains 138～145 ℃ superheated water with lithium-bromide solution liberated heat heating condensate water.
The inventive method has following advantage:
1, the inventive method can be cooled to 80 ℃ rapidly by 105～115 ℃ with cooling backwater, and has reduced big template and changed cooling water amount, has saved water resource;
2, the inventive method can prepare a large amount of saturated vapors under the situation without any external heat source, for production of polysilicon provides thermal source stable, high-quality, has reduced the consumption of steam, has saved the energy, helps environmental protection;
3, as long as the inventive method less demanding to the cooling backwater temperature usually more than 100 ℃, is fit to the use of most of production of polysilicon enterprise;
4, the inventive method has broad application prospects for this area provides a kind of new selection.
The specific embodiment
Below in conjunction with embodiment the specific embodiment of the present invention is further described, does not therefore limit the present invention among the described scope of embodiments.
Embodiment adopts the heat energy in the inventive method recycling production of polysilicon
With cooling water polycrystalline silicon reducing furnace is cooled off and to obtain cooling backwater (temperature is 110 ℃), adopt cooling backwater that bromize lithium dilute solution (mass concentration is 20～40%) is concentrated; The cooling backwater temperature is reduced to about 80 ℃.The mass concentration of the lithium-bromide solution after concentrating is 60～70%.Lithium-bromide solution after the water spray concentrates, lithium-bromide solution dilution heat release after concentrating, with liberated heat heating steam condensed water (saturated vapor heating chlorosilane, the saturated vapor condensation obtains steam condensate (SC)), obtain 140 ℃ superheated water (pressure is 0.26MPa).Superheated water is added in the flash distillation plant, and make its gasification is 130 ℃ saturated vapor (saturated vapor pressure is 0.175Mpa) moment.Heat chlorosilane with saturated vapor, obtain chlorosilane gas.Simultaneously, it is 130 ℃ condensed water that the saturated vapor condensation obtains temperature, and the lithium-bromide solution dilution heat release after utilization of condensed water concentrates is heated to be 140 ℃ of superheated waters, recycles.
Claims (7)
1. heat energy from returned cooling water recoverying and utilizing method in the production of polysilicon is characterized in that: comprise the steps:
A, heat energy shift: adopt cooling backwater that bromize lithium dilute solution is concentrated;
B, heat energy discharge: the lithium-bromide solution after the water spray concentrates adds the superheated water that hot water obtains 138～145 ℃ with liberated heat;
C, preparation high temperature saturated vapor: superheated water is added in the flash distillation plant, and making its moment gasification is 128～132 ℃ saturated vapor.
2. heat energy from returned cooling water recoverying and utilizing method in the production of polysilicon according to claim 1 is characterized in that: the described cooling backwater temperature of a step is 105～115 ℃.
3. heat energy from returned cooling water recoverying and utilizing method in the production of polysilicon according to claim 1 and 2 is characterized in that: the mass concentration of the described bromize lithium dilute solution of a step is 20～40%; The mass concentration of the lithium-bromide solution that the b step is described after concentrating is 60～70%.
4. heat energy from returned cooling water recoverying and utilizing method in the production of polysilicon according to claim 3 is characterized in that: lithium-bromide solution to the lithium-bromide solution mass concentration after b step water spray concentrates is 20～40%.
5. heat energy from returned cooling water recoverying and utilizing method in the production of polysilicon according to claim 1 and 2, it is characterized in that: c step gained saturated vapor is as thermal source heating chlorosilane, obtain chlorosilane gas and condensed water, the lithium-bromide solution dilution heat release that condensed water returns after the utilization of b step concentrates is heated to be 138～145 ℃ superheated water, recycles.
6. heat energy from returned cooling water recoverying and utilizing method in the production of polysilicon according to claim 3, it is characterized in that: c step gained saturated vapor is as thermal source heating chlorosilane, obtain chlorosilane gas and condensed water, the lithium-bromide solution dilution heat release that condensed water returns after the utilization of b step concentrates is heated to be 138～145 ℃ superheated water, recycles.
7. heat energy from returned cooling water recoverying and utilizing method in the production of polysilicon according to claim 4, it is characterized in that: c step gained saturated vapor is as thermal source heating chlorosilane, obtain chlorosilane gas and condensed water, the lithium-bromide solution dilution heat release that condensed water returns after the utilization of b step concentrates is heated to be 138～145 ℃ superheated water, recycles.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910312257XA CN101762174B (en) | 2009-12-25 | 2009-12-25 | Method for recycling heat energy from returned cooling water in production of polysilicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910312257XA CN101762174B (en) | 2009-12-25 | 2009-12-25 | Method for recycling heat energy from returned cooling water in production of polysilicon |
Publications (2)
| Publication Number | Publication Date |
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| CN101762174A CN101762174A (en) | 2010-06-30 |
| CN101762174B true CN101762174B (en) | 2011-06-08 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN200910312257XA Expired - Fee Related CN101762174B (en) | 2009-12-25 | 2009-12-25 | Method for recycling heat energy from returned cooling water in production of polysilicon |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103449443B (en) * | 2013-09-06 | 2016-01-20 | 上海森松流体技术有限公司 | A kind of polycrystalline silicon reducing furnace water system heat reclaiming system and technique |
| CN112575371A (en) * | 2020-12-10 | 2021-03-30 | 新余学院 | Equipment waste heat utilization system for preparing high-purity polycrystalline silicon |
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2009
- 2009-12-25 CN CN200910312257XA patent/CN101762174B/en not_active Expired - Fee Related
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| CN101762174A (en) | 2010-06-30 |
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