CN101754566B - Impedance matching device, impedance matching method and plasma processing system - Google Patents

Impedance matching device, impedance matching method and plasma processing system Download PDF

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CN101754566B
CN101754566B CN2008102391485A CN200810239148A CN101754566B CN 101754566 B CN101754566 B CN 101754566B CN 2008102391485 A CN2008102391485 A CN 2008102391485A CN 200810239148 A CN200810239148 A CN 200810239148A CN 101754566 B CN101754566 B CN 101754566B
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actuator
impedance matching
driver module
switch
impedance
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CN101754566A (en
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王一帆
武晔
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Beijing North Microelectronics Co Ltd
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Beijing North Microelectronics Co Ltd
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Abstract

The invention discloses an impedance matching box, which comprises a detecting unit, a control unit and an executing mechanism. The control unit comprises a microprocessor and an executing mechanism driving module. The microprocessor controls the executing mechanism driving module to get into a corresponding working state according to the process requirement, executes a matching control algorithm according to a detection value from the detecting unit, and inputs an impedance adjustment quantity in a matching network into the executing mechanism, wherein the impedance adjustment quantity is obtained by the execution of the matching control algorithm. The working states comprise a sleep state, a power-up state, an operation state and a hold state. The executing mechanism adjusts an impedance in the matching network according to the adjustment quantity to reduce the reflection power on a radio-frequency transmission line to make the power generated by a radio-frequency signal generator transmitted to a plasma processing chamber. Moreover, the invention also discloses an impedance matching method and a plasma processing system using the impedance matching box and/or the impedance matching method. The invention can improve the accuracy of impedance matching and can prolong the service life of the components, such as the impedance matching box and the like.

Description

A kind of impedance matching box, impedance matching methods and plasma process system
Technical field
The present invention relates to the plasma technology field, in particular to a kind of impedance matching box, impedance matching methods.In addition, the invention still further relates to the plasma process system of using above-mentioned impedance matching box and/or method.
Background technology
In typical radio frequency (RF) plasma producing apparatus; The RF generator of constant output impedance (being generally 50 Ω) produces the RF ripple of fixed frequency (being generally 13.56MHz); To plasma process chamber RF to be provided power, to excite the plasma that is used for etching or other technologies.In general; The constant output impedance of the impedance of the nonlinear load of plasma process chamber and RF generator is also unequal; So between RF generator and plasma process chamber, have serious impedance mismatching; Make to have bigger reflection power on the RF transmission line, the power that the RF generator produces can't all flow to plasma process chamber.For addressing this problem, must between RF generator and plasma process chamber, insert impedance matching box, automatic impedance matcher for example shown in Figure 1.
Among Fig. 1, this impedance matching box comprises transducer, controller and actuator, and said actuator comprises the variable impedance element and the drive unit that changes its impedance in the matching network.Wherein, relevant parameters such as the voltage on the sensor RF transmission line, electric current, forward power, backward power are to provide the coupling control algolithm required input variable; Controller is realized the coupling control algolithm according to these input variables, and provides the adjustment amount corresponding to actuator; The adjustment amount that actuator provides according to controller changes the resistance value of variable impedance element, and under the perfect condition, so that the input impedance of matching network equals the constant output impedance of RF generator, the two reaches coupling.When being in the perfect match state, the reflection power on the RF transmission line is zero, and the power that the RF generator produces can all flow to plasma process chamber.
In practical application; Include in the actuator of above-mentioned impedance matching box such as the variable impedance element of adjustable resistance and in order to adjust the motor of variable impedance element; Correspondingly, in the controller of this impedance matching box, include motor drive module and microprocessor, for example shown in Figure 2.Among Fig. 2, comprise microprocessor μ P, motor drive ic C1 and peripheral circuit in the controller of this impedance matching box.Being example below with the drive stepping motor is elaborated to the course of work of motor drive ic C1 shown in Figure 2.
Usually, the operating state of motor drive ic C1 can be divided into: sleep state, "on" position and running status etc.
Wherein, when motor drive ic C1 was in sleep state, motor drive ic C1 is output not, and the motor in the actuator is in free state.At this moment, if motor does not use, consumption then capable of reducing power source, and a lot of internal circuits were lost efficacy, comprise the MOSFET and the adjuster of output.If other states of entering, internal circuit can recover normal after waiting for 100 μ s.For the motor drive ic C1 among Fig. 2, as its reference voltage (that is A point voltage V shown in Figure 2, A) during greater than 2V, this motor drive ic C1 promptly gets into sleep state.
When motor drive ic C1 was in running status, it received the signal from microprocessor μ P, for example pulse signal, rotating signal etc., and according to said signal indication stepping motor is controlled, for example control rotating speed of motor and direction etc.
When motor drive ic C1 was in "on" position, controller was not to motor drive ic C1 output pulse signal, and this moment, motor can not rotate, and passed through but have electric current on the motor.
In practical application; When motor drive ic C1 is operated in sleep state, there is not electric current to pass through on the motor, if motor is vibrated; Will produce displacement; Make by the position of motor-driven object (for example, the adjustable side of adjustable resistance in the matching network) to change, thereby be unfavorable for the accurate control of impedance matching box and matching process.And when motor drive ic C1 was operated in "on" position, owing to have electric current to pass through on the motor, motor was prone to heating, if overlong time can shorten the useful life of motor, promptly shortened the useful life of adaptation.
Summary of the invention
For solving the problems of the technologies described above, the invention provides a kind of impedance matching box and a kind of impedance matching methods, it can improve the precision of impedance matching, and can prolong the useful life of parts such as impedance matching box.
In addition, the present invention also provides a kind of plasma process system of using above-mentioned impedance matching box and/or impedance matching methods, and it has the precision that can improve impedance matching equally, prolong characteristics such as system useful life.
For this reason, the present invention provides a kind of impedance matching box, comprises detecting unit, control unit and actuator, and said detecting unit is used to detect voltage, electric current, forward power, the backward power on the radio-frequency transmission line, and exports it to control unit; Said control unit matees control algolithm according to carrying out from the respective detection value of detecting unit, and the impedance adjustment amount in the matching network that will obtain thus inputs to actuator; Said actuator adjusts the impedance in the matching network according to said adjustment amount, and to reduce the reflection power on the radio-frequency transmission line, the power delivery that makes the radio freqnency generator generation is to plasma process chamber.Wherein, Said control unit comprises microprocessor and actuator's driver module; Said microprocessor gets into the corresponding work state according to arts demand control executing mechanism driver module, and said operating state comprises sleep state, "on" position, running status and hold mode.
Wherein, Between the power end of said actuator driver module and reference voltage end, first switch element is set; Between the reference voltage end of said actuator driver module and ground, the second switch unit is set, and it is closed or break off to control gate-controlled switch in said first switch element and the second switch unit by microprocessor.
As another technical scheme, the present invention also provides a kind of method of impedance matching, and it comprises the steps: 10) detect voltage, electric current, forward power, backward power on the radio-frequency transmission line; 20) carry out the coupling control algolithm and obtain the impedance adjustment amount in the matching network based on the respective detection value that obtains in the step 10); And according to arts demand entering corresponding work state, said operating state comprises sleep state, "on" position, running status and hold mode; 30) according to current working state and said impedance adjustment amount the impedance in the matching network is adjusted, to reduce the reflection power on the radio-frequency transmission line, the power delivery that makes the radio freqnency generator generation is to plasma process chamber.
Wherein, In said step 20) in; Microprocessor makes actuator's driver module get into the corresponding work state through the folding condition of control gate-controlled switch; Said gate-controlled switch comprises first gate-controlled switch that is arranged in first switch element and is arranged on second gate-controlled switch in the second switch unit; Said first switch element is arranged between the power end and reference voltage end of actuator's driver module, and said second switch unit is arranged between the reference voltage end and ground of actuator's driver module.
In addition; The present invention also provides a kind of plasma process system; It comprises radio freqnency generator and plasma process chamber; Be electrically connected with above-mentioned impedance matching box provided by the invention in radio freqnency generator and plasma process chamber between the two, with the precision that improves impedance matching and prolong the useful life of system.
The present invention has following beneficial effect:
Because actuator's driver module of impedance matching box provided by the invention has been set up a kind of operating state; Be hold mode, when actuator's driver module is in this state, have electric current to pass through on this module; And this electric current is very little; Therefore this can reduce the heating phenomenon of actuator's driver module under "on" position to a great extent, thereby prolongs in the actuator useful life such as parts such as motors, and then prolongs the useful life of parts such as this impedance matching box.And; When this actuator's driver module is in hold mode; Still there is electric current to pass through on it; Thereby can not make motor produce displacement because of actuator's driver module has electric current output when being in "on" position, and and then be unfavorable for the accurate control of impedance matching box and impedance matching process because of vibrations.Therefore, can control accurately impedance matching box and impedance matching process through setting up hold mode among the present invention.
Similarly; Owing to used above-mentioned impedance matching box provided by the invention and/or impedance matching methods in the plasma process system provided by the invention; Thereby it can more advantageously be controlled impedance matching box and impedance matching process equally comparatively accurately; And can prolong the useful life of parts such as impedance matching box, and then can prolong the useful life of this plasma treatment system.
Description of drawings
Fig. 1 is a kind of principle schematic that includes the plasma process system of impedance matching box;
Fig. 2 is the principle schematic of impedance matching box shown in Figure 1 middle part sub-control circuit;
Fig. 3 is the partial circuit schematic diagram of control unit among first embodiment of impedance matching box provided by the invention; And
Fig. 4 is the partial circuit schematic diagram of control unit among second embodiment of impedance matching box provided by the invention.
Embodiment
For making those skilled in the art person understand technical scheme of the present invention better, the present invention is elaborated below in conjunction with accompanying drawing.
Impedance matching box provided by the invention comprises detecting unit, control unit and actuator.Wherein, detecting unit comprises the respective sensor in order to relevant parameters such as the voltage on the detection radio-frequency transmission line, electric current, forward power, backward powers.Detecting unit measures these relevant parameters and it is offered control unit as the coupling required input variable of control algolithm.
Control unit comprises microprocessor and actuator's driver module.Wherein, Microprocessor gets into the corresponding work state according to arts demand control executing mechanism driver module; Said actuator driver module can comprise motor drive ic, and said operating state comprises sleep state, "on" position, running status and hold mode.And microprocessor can also basis be carried out the coupling control algolithm from the detected value of the relevant parameter of detecting unit, and the impedance adjustment amount in the matching network that will obtain thus inputs to actuator.
Actuator adjusts the impedance in the matching network according to above-mentioned impedance adjustment amount, and to reduce the reflection power on the radio-frequency transmission line, the power delivery that radio freqnency generator is produced is given plasma process chamber.Under the ideal situation, make the input impedance of matching network equal the constant output impedance of radio freqnency generator, the two reaches coupling, that is, the reflection power on the radio-frequency transmission line is zero, and the power that radio freqnency generator produces can all flow to plasma process chamber.Usually, actuator can comprise the adjustable resistance in the impedance matching network and drive the motor that move this adjustable resistance adjustable side.
Detecting unit among the present invention and actuator can adopt and the similar technology of technology illustrated in figures 1 and 2, thereby at this it are repeated no more.
Below in conjunction with accompanying drawing the control unit that impedance matching box provided by the invention adopted is described in detail.
See also Fig. 3, it is the partial circuit figure of the control unit in the first embodiment of the invention, in this control unit, comprises microprocessor μ P, motor drive ic C1 and peripheral circuit equally.Wherein, motor drive ic C1 is controlled by microprocessor μ P, and according to the signal that microprocessor μ P provides, motor is driven.Usually, the clock signal of motor drive ic C1, motor synchronous run signal, motor positive and inverse signal, motor synchronizing partly go on foot run signal, switch on and off signal etc. and can be provided by microprocessor μ P; And voltage signal among the motor drive ic C1 and reference voltage signal can be provided by external power source.When these signals act on motor drive ic C1,, can just change, reverse, change controls such as rotating speed to motor according to the principle of motor drive ic C1.
As shown in the figure, between the power end VDD of the motor drive ic C1 in the present embodiment and the reference voltage end Ref first switch element is set, this first switch element comprises the first gate-controlled switch k1 and resistance R 1 parallel with one another.Be provided with the second switch unit between the reference voltage end Ref of motor drive ic C1 in the present embodiment and the ground Gnd, shown in frame of broken lines among the figure.Particularly; This second switch unit is connected between motor drive ic C1 reference voltage end Ref and the ground Gnd with resistance R 2 parallelly connectedly; And the second gate-controlled switch k2 and the resistance R 3 that comprise mutual series connection, wherein, the control end of the second gate-controlled switch k2 is connected to microprocessor μ P; In other words, microprocessor μ P controls the on/off of the second gate-controlled switch k2.
In practical application, when controlling the first gate-controlled switch k1, opens microprocessor μ P, when the second gate-controlled switch k2 is closed, and the voltage that A is ordered can reduce, and correspondingly, the electric current of motor drive ic C1 also reduces.Because this moment, electric current was less, motor drive ic C1 can get into hold mode.
Usually, the first gate-controlled switch k1 and the second gate-controlled switch k2 can adopt switching devices such as triode, FET, thyristor, and for example, adopting U.S. FAIRCHILD company (Fairchild Semiconductor) model is the gate-controlled switch of FDV302P.It is the chip for driving of SLA7052 that motor drive ic C1 can adopt Japanese Sanken company (three agree company) model, and perhaps Japanese FUJ company (company of Fuji) model is the chip for driving of PMM8723.It is microprocessor of TMS320F2812 etc. that microprocessor μ P can adopt American TI Company (Texas Instruments) model.
Below, specify the operating state of the motor drive ic C1 in the control unit in conjunction with the combination situations of Fig. 3 and first switch element and second switch unit.Wherein, establish supply voltage VDD=5V, adjustable resistance R2=2k Ω, resistance R 1=10k Ω, R3=230 Ω, RSA=RSB=0.5 Ω.
Situation 1: when microprocessor μ P controls the first gate-controlled switch k1 in first switch element when closed, R1 is by short circuit, the voltage V that this moment, A was ordered A1=VDD=5V.Owing to V this moment A1>2V is so this moment, motor drive ic C1 was in sleep state.
Situation 2: when microprocessor μ P controls the first gate-controlled switch k1 and the second gate-controlled switch k2 in the second switch unit in first switch element and all opens, the voltage that A is ordered V A 2 = R 2 R 1 + R 2 · VDD = 0.83 V , The drive current of motor drive ic C1 the 6th pin SenseA I A 2 = V A 2 RSA = 1.67 A . At this moment, if motor drive ic C1 the 7th pin Clock does not have pulse signal, then motor drive ic C1 is in "on" position.If pulse signal is arranged, then motor drive ic C1 is in running status.
Situation 3: open, when the second gate-controlled switch k2 in the second switch unit is closed the A point voltage when microprocessor μ P controls the first gate-controlled switch k1 in first switch element V A 3 = R 2 / / R 3 R 1 + R 2 / / R 3 &CenterDot; VDD = 0.1 V , The drive current of the 6th pin SenseA of motor drive ic C1 I A 3 = V A 3 RSA = 0.2 A , Can find out I through comparative case 2 and situation 3 A3<<i A2At this moment, if the 7th pin Clock of motor drive ic C1 does not have pulse signal, then motor drive ic C1 is in hold mode.
Can know through top description; Because the electric current when motor drive ic C1 is operated in hold mode is very little; Therefore this can reduce the heating phenomenon of motor drive ic C1 under "on" position to a great extent, thereby prolongs the useful life of motor, just prolongs the useful life of adaptation; And; Although the electric current of motor drive ic C1 is very little under hold mode, on this motor drive ic C1, still have electric current output after all, therefore; The motor drive ic C1 that is under the hold mode can be when not being in "on" position; Do not make motor produce displacement because of motor drive ic C1 has electric current output, move, be unfavorable for the accurate control of impedance matching box and impedance matching process therefrom thereby drive by the parts of its driving (the for example adjustable side of adjustable resistance) because of vibrations.Therefore; Can be through setting up hold mode and enter into hold mode among the present invention according to actual process needs control motor drive ic C1, thus help the useful life that impedance matching box and impedance matching process are controlled and prolonged parts such as impedance matching box more accurately.
In fact, the concrete form of second switch unit can need not be confined to the situation shown in Fig. 3, but also can adopt other suitable forms, and for example Fig. 4 just shows so a kind of modification.
As shown in Figure 4; Second switch unit in the present embodiment comprises two groups of branch roads parallel with one another (shown in frame of broken lines among the figure); That is first branch road of, forming by the resistance R 3 and the second gate-controlled switch k2 of mutual series connection and second branch road of forming by the resistance R 4 and the 3rd gate-controlled switch k3 of mutual series connection.Wherein, the control end of the second gate-controlled switch k2 and the 3rd gate-controlled switch k3 all is connected to microprocessor μ P, in other words, by microprocessor μ P the second gate-controlled switch k2 and the 3rd gate-controlled switch k3 is controlled.
In the present embodiment, open, (possibly be that the second gate-controlled switch k2 is closed, the 3rd gate-controlled switch k3 opens during the second gate-controlled switch k2 and the 3rd gate-controlled switch k3 action when microprocessor μ P controls the first gate-controlled switch k1; The second gate-controlled switch k2 opens, the 3rd gate-controlled switch k3 closed; The second gate-controlled switch k2 and the 3rd gate-controlled switch k3 are closed), the voltage that A is ordered among Fig. 4 can reduce, thereby the electric current of motor drive ic C1 is reduced.Because this moment, electric current was less, chip gets into hold mode.
The computational methods and the computational methods in the first embodiment of the invention that it is pointed out that A point voltage among Fig. 4 are similar, repeat no more at this.In addition, the gate-controlled switch in the present embodiment, motor drive ic and microprocessor all can adopt the corresponding device among first embodiment shown in Figure 3, also repeat no more at this.
In addition; The present invention also provides a kind of impedance matching methods; This matching process is accomplished by impedance matching box, and this impedance matching box is arranged between radio freqnency generator and the plasma process chamber usually, and comprises detecting unit, control unit and actuator; Wherein control unit comprises microprocessor and actuator's driver module; Actuator can comprise such as the impedance adjustment element of adjustable resistance and be used for driving the motor that move the adjustable side of matching network adjustable resistance that correspondingly, actuator's driver module comprises motor drive ic.
In practical application, impedance matching methods specifically comprises the steps:
10) detect voltage, electric current, forward power, the backward power on the radio-frequency transmission line between radio freqnency generator and the plasma process chamber.
20) carry out the coupling control algolithm and obtain the impedance adjustment amount in the matching network based on respective detection values such as the voltage that obtains in the step 10), electric current, forward power, backward powers; And according to arts demand entering corresponding work state, said operating state comprises sleep state, "on" position, running status and hold mode.In fact, above-mentioned operating state refers to the operating state that actuator's driver module is had.
30) according to current working state and said impedance adjustment amount the impedance in the matching network is adjusted, to reduce the reflection power on the radio-frequency transmission line, the power delivery that radio freqnency generator is produced is given plasma process chamber.Under the perfect condition, make the input impedance of matching network equal the constant output impedance of radio freqnency generator, the two reaches coupling, that is, the reflection power on the radio-frequency transmission line is zero, and the power that radio freqnency generator produces can all flow to plasma process chamber.
Wherein, in step 20) in, can get into the corresponding work state through the folding condition of control gate-controlled switch.Gate-controlled switch comprises first gate-controlled switch that is arranged in first switch element and is arranged on the gate-controlled switch in the second switch unit; Wherein, First switch element is arranged between the power end and reference voltage end of actuator's driver module, and the second switch unit is arranged between the reference voltage end and ground of actuator's driver module.
In practical application, when first switch element is in channel status, make actuator's driver module get into sleep state; When first switch element and second switch unit all are in off state, and microprocessor do not send pulse signal to actuator's driver module, then makes actuator's driver module get into "on" position; When first switch element and second switch unit all are in off state, and microprocessor sends pulse signal to actuator's driver module, then makes actuator's driver module get into running status; When first switch element is in off state, the second switch unit is in channel status, and microprocessor do not send pulse signal to actuator's driver module, then makes actuator's driver module get into hold mode.
In addition; The present invention also provides a kind of plasma process system; It comprises radio freqnency generator and plasma process chamber; And be electrically connected with above-mentioned impedance matching box provided by the invention in radio freqnency generator and plasma process chamber between the two, with the precision that improves impedance matching and prolong the useful life of system.
The present invention also provides a kind of plasma process system; It comprises radio freqnency generator and plasma process chamber; This plasma treatment system has adopted above-mentioned impedance matching methods provided by the invention, with the precision that improves impedance matching and prolong the useful life of system.
It is understandable that above execution mode only is the illustrative embodiments that adopts for principle of the present invention is described, yet the present invention is not limited thereto.For the one of ordinary skilled in the art, under the situation that does not break away from spirit of the present invention and essence, can make various modification and improvement, these modification also are regarded as protection scope of the present invention with improving.

Claims (12)

1. an impedance matching box comprises detecting unit, control unit and actuator,
Said detecting unit is used to detect voltage, electric current, forward power, the backward power on the radio-frequency transmission line, and exports it to control unit;
Said control unit matees control algolithm according to carrying out from the respective detection value of detecting unit, and the impedance adjustment amount in the matching network that will obtain thus inputs to actuator;
Said actuator adjusts the impedance in the matching network according to said adjustment amount, to reduce the reflection power on the radio-frequency transmission line, makes power delivery that radio freqnency generator produces to plasma process chamber,
It is characterized in that; Said control unit comprises microprocessor and actuator's driver module; Said microprocessor gets into the corresponding work state according to arts demand control executing mechanism driver module, and said operating state comprises sleep state, "on" position, running status and hold mode.
2. impedance matching box according to claim 1; It is characterized in that; Between the power end of said actuator driver module and reference voltage end, first switch element is set; Between the reference voltage end of said actuator driver module and ground, the second switch unit is set, and it is closed or break off to control gate-controlled switch in said first switch element and the second switch unit by microprocessor.
3. impedance matching box according to claim 2 is characterized in that, said microprocessor is controlled said first switch element and is in channel status, makes actuator's driver module get into sleep state; Perhaps, microprocessor is controlled said first switch element and the second switch unit all is in off state, and does not send pulse signal to actuator's driver module, makes actuator's driver module get into "on" position; Perhaps, microprocessor is controlled said first switch element and the second switch unit all is in off state, and sends pulse signal to actuator's driver module, makes actuator's driver module get into running status; Perhaps, microprocessor controls that said first switch element is in off state, the second switch unit is in channel status, and does not send pulse signal to actuator's driver module, makes actuator's driver module get into hold mode.
4. impedance matching box according to claim 2 is characterized in that, said first switch element comprises first gate-controlled switch and resistance parallel with one another.
5. impedance matching box according to claim 2 is characterized in that, said second switch unit comprises second gate-controlled switch and the resistance of mutual series connection.
6. impedance matching box according to claim 2 is characterized in that, said second switch unit comprises two branches parallel with one another, and wherein each branch includes gate-controlled switch and the resistance that is one another in series.
7. according to any described impedance matching box in the claim 4 to 6, it is characterized in that said gate-controlled switch comprises triode, FET, thyristor.
8. the method for an impedance matching is characterized in that, comprises the steps:
10) voltage, electric current, forward power, the backward power on the detection radio-frequency transmission line;
20) carry out the coupling control algolithm and obtain the impedance adjustment amount in the matching network based on the respective detection value that obtains in the step 10); And according to arts demand entering corresponding work state, said operating state comprises sleep state, "on" position, running status and hold mode;
30) according to current working state and said impedance adjustment amount the impedance in the matching network is adjusted, to reduce the reflection power on the radio-frequency transmission line, the power delivery that makes the radio freqnency generator generation is to plasma process chamber.
9. impedance matching methods according to claim 8; It is characterized in that; In said step 20) in; Microprocessor makes actuator's driver module get into the corresponding work state through the folding condition of control gate-controlled switch; Said gate-controlled switch comprises first gate-controlled switch that is arranged in first switch element and is arranged on second gate-controlled switch in the second switch unit, and said first switch element is arranged between the power end and reference voltage end of actuator's driver module, and said second switch unit is arranged between the reference voltage end and ground of actuator's driver module.
10. impedance matching methods according to claim 9 is characterized in that, when said first switch element is in channel status, then makes actuator's driver module get into sleep state; When said first switch element and second switch unit all are in off state, and microprocessor do not send pulse signal to actuator's driver module, then makes actuator's driver module get into "on" position; When said first switch element and second switch unit all are in off state, and microprocessor sends pulse signal to actuator's driver module, then makes actuator's driver module get into running status; When said first switch element is in off state, the second switch unit is in channel status, and microprocessor do not send pulse signal to actuator's driver module, then makes actuator's driver module get into hold mode.
11. impedance matching methods according to claim 9 is characterized in that, said gate-controlled switch comprises triode, FET, thyristor.
12. plasma process system; Comprise radio freqnency generator and plasma process chamber; It is characterized in that; Any described impedance matching box in radio freqnency generator and plasma process chamber are electrically connected with like claim 1-7 between the two is with the precision that improves impedance matching and prolong the useful life of system.
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CN101221881A (en) * 2007-01-12 2008-07-16 北京北方微电子基地设备工艺研究中心有限责任公司 Impedance matching method and device

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Publication number Priority date Publication date Assignee Title
CN107293467A (en) * 2016-04-13 2017-10-24 朗姆研究公司 Reduce the system and method for reflection power using radio frequency value during state changes
CN107293467B (en) * 2016-04-13 2019-05-28 朗姆研究公司 Reduce the system and method for reflection power using radio frequency value during state transformation

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