CN101750873A - Phase shifting mask - Google Patents
Phase shifting mask Download PDFInfo
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- CN101750873A CN101750873A CN200810204180A CN200810204180A CN101750873A CN 101750873 A CN101750873 A CN 101750873A CN 200810204180 A CN200810204180 A CN 200810204180A CN 200810204180 A CN200810204180 A CN 200810204180A CN 101750873 A CN101750873 A CN 101750873A
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- phase shifting
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Abstract
The invention provides a phase shifting mask which comprises a transparent figure, wherein the shape of the transparent figure comprises a symmetrical star type, the star type is provided with more than four outwards convex angles in an even number, and the outwards convex angles take the center of the star type as a symmetrical center and form central symmetry. Compared with the prior art, the invention adopts the star type figure with more than four outwards convex angles in the even number on the phase shifting mask, can obviously lower the side lobe effect but also keeps unchanged with a common transparent figure in this field on other optical parameters.
Description
Technical field
The application relates to field of semiconductor manufacture, relates in particular to a kind of phase shifting mask.
Background technology
It is digital mask and attenuation type phase displacement photomask that present main photomask types has the binary intensity photomask.The manufacture method of traditional binary intensity photomask is exemplified below: with the graph data input exposure sources of photomask; The quartz glass substrate (general designation " substrate ") that provides a slice to be coated with light tight chromium metal film; On substrate, be coated with positive photoresistance,, utilize exposure sources that substrate is exposed, form exposure figure according to graph data; Carry out development step, the photoresistance of exposure region is removed in this step; Utilize the photoresistance that is not removed to do protection, with dry etching the chromium film is carried out etching, the chromium metal film that will have exposure figure removes, and exposure figure is transferred on the chromium metal film; Again photoresistance is removed, just on substrate, formed photomask pattern.Clean again afterwards, fault detection etc., and on substrate a bonding framework, bonding one deck covers after the light transmission film of photomask pattern on framework, has just finished the making of binary intensity photomask.At for example application number is to find more relevant therewith information in 200510008205.5 the Chinese patent application.
And the substrate of attenuation type phase displacement photomask generally comprises quartz glass substrate, is plated on the substrate as the molybdenum silicide (MoSi) of phase shift layer and is plated on lighttight chromium metal level on the phase shift layer.In manufacture process; through described step is after forming figure on the lighttight chromium metal film before, the chromium metal film that utilization is not removed is done protection and is carried out dry etching, removes the phase shift layer; again the chromium metal film is removed, thereby on substrate, formed figure with phase shift decay.Clean again afterwards, fault detection etc., and on the graphics field of substrate a bonding support frame, bonding one deck covers after the light transmission film of phase shift decay figure on support frame, has just finished the making of attenuation type phase displacement photomask.Because the effect of phase shifting mask is better than digital mask, therefore be used widely.
Though in integrated circuit, the manufacturing of small size figure has brought higher speed and more performance,, industry still is desirably in and adopts phase shifting mask in such device manufacturing processes more widely.But phase shifting mask causes mask layout the complex nature of the problem to increase to further expanding of more complicated design.For example, when in intensive design, arranging phase shift window, may observe the generation of phase conflicts.In this case, in exposure process, the phase shift window with same phase will form optic phase mutual interference.
In the design of single integrated circuit, may arrange millions of figure.Data processing difficulty on so big quantity rank increases.For example, the operation amount of the phase shift window that repeats to arrange on this quantity rank increases severely, thereby it is impracticable to become.
The Chinese invention patent application discloses a kind of layout method of phase shifting mask for No. 02811551, reduces the phase mutual interference of different phase shifters by the collocation to different phase shifter shapes.
But,, utilize the phase shifting mask of prior art manufacturing still to have side lobe effect (Side Lobe Effect) along with reducing of characteristic dimension.The exposure figure that occurs can appear not expecting near the master map that uses the phase shifting mask exposure to be produced.This remains because dimension of picture is decreased to the result of the diffraction effect that is produced on the rank of exposure wavelength.
Therefore, still there is the demand of improving phase shifting mask in this area, in the hope of reducing side lobe effect, can not change other optical characteristics of phase shifting mask again.
Summary of the invention
Technical matters to be solved by this invention provides a kind of phase shifting mask, reduces side lobe effect by the graphics shape that changes on the phase shifting mask, but keeps the optical characteristics of original figure substantially.
For solving the problems of the technologies described above, the invention provides a kind of phase shifting mask, comprise transparent figure, the shape of described transparent figure comprises the star-like of symmetry, the described star-like outer salient angle of four above even numbers that has, described outer salient angle is that symcenter becomes the center symmetry with star-like center.
Alternatively, described transparent figure becomes arranged on described phase shifting mask.
Alternatively, the angle of the outer salient angle of described even number is identical.
Alternatively, the angle of described outer salient angle is less than 34 degree.
Alternatively, the angle of described outer salient angle is that 20 degree are to 34 degree.
Alternatively, described star-like external diameter of a circle is less than 300 nanometers.
Alternatively, the quantity of described outer salient angle is more than or equal to 4 number in 2 the power.
Compared with prior art, the present invention adopts the star-like figure with salient angle outside four above even numbers on phase shifting mask, can obviously reduce side lobe effect, but the transparent figure of using always with this area on other optical parametrics remains unchanged.
Description of drawings
Fig. 1 is four jiaos of star-like transparent figure structural representations that phase shifting mask adopted in the one embodiment of the invention;
Fig. 2 is for adopting the phase shifting mask synoptic diagram of above-mentioned transparent figure;
Fig. 3 is five kinds of phase shifting mask synoptic diagram that carry out horizontal contrast experiment's the transparent figure that comprises five kinds of shapes;
Secondary lobe light intensity that Fig. 4 is produced for above-mentioned five kinds of phase shifting masks expose under different pitches and the contrast of the ratio of master map light intensity;
Fig. 5 is the characteristic dimension contrast that five kinds of phase shifting masks expose under different pitches;
Fig. 6 is the depth of focus contrast that five kinds of phase shifting masks expose under different pitches;
Fig. 7 adopts the synoptic diagram that concerns between different outer salient angle angles and the normalized secondary lobe light intensity for phase shifting mask adopted in the one embodiment of the invention four jiaos of star-like transparent figure.
Embodiment
The present inventor finds that star-like as if the transparent figure on the phase shifting mask is designed to, because the many outer salient angles of star-like existence, the diffraction of light that can alleviate through star-like figure disturbs, thereby can reduce side lobe effect.
And the inventor also finds, asymmetrically polygonally star-likely can not effectively alleviate side lobe effect, because asymmetrical star-like angle can not alleviate the diffraction of printing opacity.So the inventor thinks and should adopt have an outer salient angle of even number star-like to realize purpose of the present invention.
In addition, the inventor thinks, if the outer salient angle quantity of star-like even number only is 2, and is unfavorable for forming circular exposure figure in exposure process, and formed exposure figure is just also non-circular, but has formed ellipse, and this does not conform to expection.
Therefore, in the present embodiment, provide a kind of phase shifting mask, comprise transparent figure, the shape of described transparent figure comprises the star-like of symmetry, the described star-like outer salient angle of four above even numbers that has, and described outer salient angle is that symcenter becomes the center symmetry with star-like center.
Be example to have the star-like of four outer salient angles below, content of the present invention is described in detail.
In one embodiment of the invention, the shape of the preferred star-like transparent figure 101 that comprises of phase shifting mask as shown in Figure 1.
Two limits that this star-like transparent figure 101 can be regarded as four outer salient angle α interconnect formed figure.Two limits of outer salient angle α have been interconnected to form interior re-entrant angle β.
Outer salient angle α shown in Figure 1 is an acute angle, but this is an example, in the scope of this and unrestricted claim.In other embodiment of the present invention, outer salient angle α also can be right angle or obtuse angle, about angle preferably will be in follow-up detailed description.
The summit of four outer salient angle α of this star-like transparent figure 101 is that symcenter becomes the center symmetry arrangement with the center 102 of star-like transparent figure 101.As previously mentioned, the diffraction when such symmetric offset spread can effectively alleviate exposure disturbs, and then alleviates side lobe effect.
The angle that a preferred shape of star-like transparent figure 101 is four outer salient angle α is identical, and in this case, star-like transparent figure 101 has formed a figure of symmetry fully, and this is more favourable for alleviating side lobe effect.
The angle of interior re-entrant angle β is that angle and the number by outer salient angle α determined.And, the angle of outer salient angle α and number have also determined through the circle on the summit of re-entrant angle β in all diameter of (figure does not show), the size of this round diameter is one of the determinative of the transmittancy of star-like transparent figure 101, thereby the transmittancy of star-like transparent figure 101 can be adjusted by angle and the number of adjusting outer salient angle α according to actual needs.
In another preferred embodiment of the present invention, the external diameter of a circle of star-like transparent figure 101, promptly the summit of four outer salient angle α to the twice of the distance at the center 102 of star-like transparent figure 101 less than 300 nanometers, this helps star-like transparent figure 101 arranging on phase shifting mask, and also helps being used to form the phase shifting mask that has than small-feature-size.
As shown in Figure 2, in another preferred embodiment of the present invention, star-like transparent figure 101 is arranged in arranged on phase shifting mask 103.Certainly, Fig. 2 only shows the part of phase shifting mask 103, and the quantity of star-like transparent figure 101 can be selected according to the actual needs on the phase shifting mask 103.
In the above-mentioned arranged, another kind of preferred situation is that the distance between the center of star-like transparent figure 101 adjacent in the matrix equates that this distance specifically is called " pitch " (Pitch) in following specific descriptions.The length of pitch is to describe a special parameter of phase shifting mask, and this parameter is determined that by process node for example under the process node of 0.13 μ m, pitch can only be more than or equal to 0.13 μ m.
In the above-described embodiments, the quantity of the outer salient angle α of star-like transparent figure 101 is 4.But according to the front to the description of inventor's discovery as can be known, the quantity of outer salient angle α is 6,8,10 etc. also can realize purpose of the present invention greater than 4 even number.According to another research of inventor, when the quantity of the star-like transparent figure 101 salient angle α of China and foreign countries was 2 exponential, promptly 4,8,16,32,64, during 128...... etc., the side lobe effect that is produced was minimum.
Certainly, the quantity of outer salient angle α is many more, and the manufacture difficulty of phase shifting mask 103 is just high more, and too much outer salient angle α is disadvantageous for reducing manufacturing cost.Therefore, the inventor thinks, the quantity of outer salient angle α is 4 and 8 to be preferred values.
The inventor compares test to difform transparent figure, has drawn the conclusion of star-like figure for the best results of improving side lobe effect, will be elaborated to experimental result below.
Fig. 3 is for adding five kinds of phase shifting masks 201,202,203,204 and 205 of testing the transparent figure that comprises five kinds of shapes that laterally contrasts.Wherein the transparent figure in the phase shifting mask 201 be shaped as cross; Transparent figure in the phase shifting mask 202 be shaped as rhombus; Transparent figure in the phase shifting mask 203 be shaped as in this area the square of normal use; The X type that is shaped as of the transparent figure in the phase shifting mask 204; And four jiaos of the symmetries that are shaped as in the one embodiment of the invention of the transparent figure in the phase shifting mask 205 are star-like.
Secondary lobe light intensity that Fig. 4 is produced for above-mentioned five kinds of phase shifting masks expose under different pitches and the contrast of the ratio of master map light intensity.Horizontal ordinate is a pitch among Fig. 4, and ordinate is the ratio of secondary lobe light intensity and master map light intensity, and 401 to 405 5 lines are represented 201 to 205 5 kinds of phase shifting masks respectively among the figure.
As can be seen from Figure 4, under the situation of pitch less than 0.5 μ m, five kinds of secondary lobe light intensity that phase shifting mask produced are compared greater than the situation of 0.5 μ m with pitch with the ratio of master map light intensity, and ratio significantly increases.But the secondary lobe light intensity that the four jiaos of star-like phase shifting masks 205 of symmetry in the employing one embodiment of the invention are produced and the ratio of master map light intensity will be significantly less than other four kinds of phase shifting masks.And pitch is more little, represent phase shifting mask the grade of applicable semiconductor technology high more.That is to say, when being used for the higher level semiconductor technology, adopting the phase shifting mask 205 of the four jiaos of star-like transparent figure of symmetry in the one embodiment of the invention can alleviate the interference of the diffraction that exposes better, thereby reduce side lobe effect.
Fig. 5 is the characteristic dimension contrast that five kinds of phase shifting masks expose under different pitches.Horizontal ordinate is a pitch among Fig. 5, and ordinate is a characteristic dimension, and 501 to 505 5 lines are represented 201 to 205 5 kinds of phase shifting masks respectively among the figure.
As can be seen from Figure 5, article 501 to 505 5, line does not have too big difference on the whole, promptly adopts the phase shifting mask 205 of the four jiaos of star-like transparent figure of symmetry in the one embodiment of the invention and adopts the phase shifting mask 203 of the most frequently used square transparent figure in this area not have significant difference on this optical index of exposure feature size.
Fig. 6 is the depth of focus contrast that five kinds of phase shifting masks expose under different pitches.Horizontal ordinate is a pitch among Fig. 6, and ordinate is a depth of focus.601 to 605 5 lines are represented 201 to 205 5 kinds of phase shifting masks respectively among Fig. 6.
As can be seen from Figure 6, pitch is that 0.45 μ m is a separation.When pitch during greater than 0.45 μ m, the depth of focus that the phase shifting mask 205 of the four jiaos of star-like transparent figure of symmetry in the employing one embodiment of the invention is produced is greater than other four kinds of phase shifting masks, and when pitch during less than 0.45 μ m, the depth of focus that adopts the phase shifting mask 205 of the four jiaos of star-like transparent figure of symmetry in the one embodiment of the invention to be produced is less than other four kinds of phase shifting masks.
From Fig. 4 to Fig. 6 as can be seen, adopt the phase shifting mask 205 of the four jiaos of star-like transparent figure of symmetry in the one embodiment of the invention both can reduce side lobe effect, can keep other optical properties of the most frequently used square transparent figure in this area again.
In addition, the present inventor has also studied the angle of four outer salient angle α of the four jiaos of star-like transparent figure of symmetry in the one embodiment of the invention for the influence of side lobe effect.
Fig. 7 is different outer salient angle angle and the graph of a relation between the normalized secondary lobe light intensity.Horizontal ordinate is the position of four jiaos of star-like transparent figure among Fig. 7, and ordinate is the normalization light intensity, and wherein place, the summit of curve represents the center of four jiaos of star-like transparent figure.The angle of the outer salient angle α of 701 representatives is 90 degree among the figure; The angle of the outer salient angle α of 702 representatives is 34 degree; The angle of the outer salient angle α of 703 representatives is 20 degree.
From Fig. 7, the angle of outer salient angle α is more little, and the secondary lobe light intensity is low more.But the angle of outer salient angle α diminishes, and will cause the transmittance of phase shifting mask to reduce.Cross low transmittance and will cause the under-exposure of Semiconductor substrate, this should be avoided.The present inventor finds, when the angle of outer salient angle α is spent greater than 20 degree and less than 34, both can obtain transmittance preferably, can reduce the secondary lobe light intensity effectively again.
Though Fig. 7 has only showed that the quantity of outer salient angle α is at 4 o'clock, the relation of the angle of outer salient angle α and secondary lobe light intensity.But the inventor finds, when the quantity of outer salient angle α was aforesaid other numerical value, the angle of outer salient angle α remained identical with the trend that concerns of secondary lobe light intensity.
Though the present invention with preferred embodiment openly as above; but it is not to be used for limiting claim; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
Claims (7)
1. a phase shifting mask comprises transparent figure, it is characterized in that: the shape of described transparent figure comprises the star-like of symmetry, the described star-like outer salient angle of four above even numbers that has, and described outer salient angle is that symcenter becomes the center symmetry with star-like center.
2. phase shifting mask as claimed in claim 1 is characterized in that: described transparent figure becomes arranged on described phase shifting mask.
3. phase shifting mask as claimed in claim 1 is characterized in that: the angle of the outer salient angle of described even number is identical.
4. phase shifting mask as claimed in claim 1 is characterized in that: the angle of described outer salient angle is less than 34 degree.
5. phase shifting mask as claimed in claim 1 is characterized in that: the angle of described outer salient angle is that 20 degree are to 34 degree.
6. phase shifting mask as claimed in claim 1 is characterized in that: described star-like external diameter of a circle is less than 300 nanometers.
7. phase shifting mask as claimed in claim 1 is characterized in that: the quantity of described outer salient angle is more than or equal to 4 number in 2 the power.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810204180A CN101750873A (en) | 2008-12-08 | 2008-12-08 | Phase shifting mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810204180A CN101750873A (en) | 2008-12-08 | 2008-12-08 | Phase shifting mask |
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| Publication Number | Publication Date |
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| CN101750873A true CN101750873A (en) | 2010-06-23 |
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| CN200810204180A Pending CN101750873A (en) | 2008-12-08 | 2008-12-08 | Phase shifting mask |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103412462A (en) * | 2013-07-26 | 2013-11-27 | 北京京东方光电科技有限公司 | Mask plate and liquid crystal panel |
| CN103760748A (en) * | 2014-01-28 | 2014-04-30 | 北京京东方光电科技有限公司 | Mask plate and through hole forming method |
| WO2015014071A1 (en) * | 2013-07-31 | 2015-02-05 | 北京京东方光电科技有限公司 | Mask plate |
| CN105137709A (en) * | 2015-10-08 | 2015-12-09 | 京东方科技集团股份有限公司 | Mask plate, manufacturing method and device of mask plate and using method of mask plate |
| CN109725486A (en) * | 2019-01-16 | 2019-05-07 | 京东方科技集团股份有限公司 | Mask plate and its manufacturing method, the manufacturing method of display base plate |
-
2008
- 2008-12-08 CN CN200810204180A patent/CN101750873A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103412462A (en) * | 2013-07-26 | 2013-11-27 | 北京京东方光电科技有限公司 | Mask plate and liquid crystal panel |
| WO2015010428A1 (en) * | 2013-07-26 | 2015-01-29 | 北京京东方光电科技有限公司 | Mask plate and liquid crystal panel |
| CN103412462B (en) * | 2013-07-26 | 2016-03-02 | 北京京东方光电科技有限公司 | A kind of mask plate and liquid crystal panel |
| WO2015014071A1 (en) * | 2013-07-31 | 2015-02-05 | 北京京东方光电科技有限公司 | Mask plate |
| CN104345544A (en) * | 2013-07-31 | 2015-02-11 | 北京京东方光电科技有限公司 | Mask plate |
| CN104345544B (en) * | 2013-07-31 | 2016-08-31 | 北京京东方光电科技有限公司 | Mask plate |
| CN103760748A (en) * | 2014-01-28 | 2014-04-30 | 北京京东方光电科技有限公司 | Mask plate and through hole forming method |
| CN105137709A (en) * | 2015-10-08 | 2015-12-09 | 京东方科技集团股份有限公司 | Mask plate, manufacturing method and device of mask plate and using method of mask plate |
| CN105137709B (en) * | 2015-10-08 | 2019-11-26 | 京东方科技集团股份有限公司 | Mask plate and its manufacturing method, manufacturing device, the application method of mask plate |
| CN109725486A (en) * | 2019-01-16 | 2019-05-07 | 京东方科技集团股份有限公司 | Mask plate and its manufacturing method, the manufacturing method of display base plate |
| CN109725486B (en) * | 2019-01-16 | 2022-08-16 | 京东方科技集团股份有限公司 | Mask plate, manufacturing method thereof and manufacturing method of display substrate |
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Open date: 20100623 |