CN101748363A - Sputtering target material of multi-component oxide and manufacturing method thereof - Google Patents
Sputtering target material of multi-component oxide and manufacturing method thereof Download PDFInfo
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- CN101748363A CN101748363A CN200810204400A CN200810204400A CN101748363A CN 101748363 A CN101748363 A CN 101748363A CN 200810204400 A CN200810204400 A CN 200810204400A CN 200810204400 A CN200810204400 A CN 200810204400A CN 101748363 A CN101748363 A CN 101748363A
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Abstract
The invention discloses a sputtering target material of a multi-component oxide and a manufacturing method thereof, relates to the technical field of semiconductor devices and aims at solving the technical problem of manufacturing the sputtering target material with multiple components, low cost, low melting point, hardly cracking, and big size; and the sputtering target material of the multi-component oxide comprises a target material substrate made of a metal with high melting point and high stability, a plurality of holes are evenly formed on the target material substrate, and oxide ceramic columns which are formed by pressing oxide powder of the metal which has low melting point or is easy to be oxidized via a mode and sintering a green body are filled in the holes. The sputtering target material and the manufacturing method are characterized by low cost, multiple components, low melting point, difficult cracking and capability of manufacturing the large-size target material.
Description
Technical field
The present invention relates to semiconductor device art, particularly relate to a kind of sputtering target material and manufacturing technology thereof of multi-component oxide.
Background technology
The metal oxide film of sputter various ingredients needs suitable target, the sputtering target material of this class film commonly used is all made with oxide ceramics now, perhaps uses alloy target material to adopt the method for reactive sputtering to make the sull of various ingredients.But these two kinds of methods all have some shortcomings, and for ceramic target, because ceramic target cracking easily in sintering procedure be difficult to make large-sized target, and manufacturing cost is than higher, this is very unfavorable to scale operation; Though and alloy target material is easy to manufacture, be difficult to do multi-component target, because each metal ingredient of alloy material tends to be separated, destroy the homogeneity of component.Powder metallurgy method is made target and can be solved the above problems, but for the metal that contains low melting point metal or easy oxidation, just can not adopt powder metallurgy method to make.So still there are a lot of shortcomings in the present technology of the manufacturing of the target of sputter various ingredients sull.
Summary of the invention
At the defective that exists in the above-mentioned prior art, technical problem to be solved by this invention provides a kind of low cost of manufacture, polycomponent, and low melting point is difficult for rimose, can make the sputtering target material and the manufacture method thereof of the multi-component oxide of large-size target.
In order to solve the problems of the technologies described above, the sputtering target material of a kind of multi-component oxide provided by the present invention and manufacture method thereof, it is characterized in that, comprise by the high metal target substrate of fusing point high stability, a plurality of holes evenly are set on the target substrate, and the oxide ceramics post that sinters into through mould compacting, idiosome of the metal oxide powder of in hole, filling in or easy oxidation low by fusing point.
A kind of manufacture method of sputtering target material of multi-component oxide of the present invention, it is characterized in that, step of manufacturing: 1) according to the composition of required sputtering target material, select for use melting temperature greater than the metal of 100 ℃ (stability high) as the metal substrate material, be processed into the shape of target with the method for mechanical workout; 2) melting temperature of other components is pressed into column less than the metal oxide powder of 200 ℃ (or easily oxidations) in mould, again the metal oxide idiosome of column is sintered into the oxide ceramics post of (little); 3) evenly process many holes on metal substrate, these holes spread all over metal substrate, and the internal diameter of hole cooperates with the ceramics pole external diameter, can fill in ceramics pole in the hole of metal substrate; 4) ceramics pole is filled up hole on the metal substrate, so just constituted a multi-component oxide sputtering target material.
Utilize the sputtering target material and the manufacture method thereof of multi-component oxide provided by the invention, owing to adopt.The present invention is made by metal substrate and metal oxide ceramic combination, can solve the inapplicable problem of metal that the metal powder metallurgy target contains low melting point metal or easy oxidation, can also solve and make the easy rimose difficulty of large-size ceramic target, and the present invention is easy to manufacture, and manufacturing cost is lower than ceramic target.
Description of drawings
Fig. 1 is the synoptic diagram of the sputtering target material of the embodiment of the invention 1 multi-component oxide;
Fig. 2 is the synoptic diagram of the sputtering target material of the embodiment of the invention 2 multi-component oxides.
Embodiment
Below in conjunction with description of drawings embodiments of the invention are described in further detail, but present embodiment is not limited to the present invention, every employing analog structure of the present invention, method and similar variation thereof all should be listed protection scope of the present invention in.
The sputtering target material of a kind of multi-component oxide that the embodiment of the invention provided, be characterized in comprising by the high metal target substrate of fusing point high stability, a plurality of holes evenly are set on the target substrate, and the oxide ceramics post that sinters into through mould compacting, idiosome of the metal oxide powder of in hole, filling in or easy oxidation low by fusing point.
The manufacture method of the sputtering target material of the described multi-component oxide of the embodiment of the invention: 1) according to the composition of required sputtering target material, select for use the high metal of fusing point high stability, be processed into the shape of target with the method for mechanical workout as the metal substrate material; 2) fusing point of other components metal oxide powder low or easy oxidation is pressed into column in mould, the metal oxide idiosome with column sinters little oxide ceramics post into again; 3) evenly process many holes on metal substrate, these holes spread all over metal substrate, and the size of hole and ceramics pole coincide, and can fill in ceramics pole in the hole of metal substrate; 4) ceramics pole is filled up hole on the metal substrate, so just constituted a multi-component oxide sputtering target material.
As shown in Figure 1, one embodiment of the present invention are the sputtering target materials that prepare Indium sesquioxide gallium zinc with this method, contain gallium in this target, and the fusing point of gallium has only 30 degrees centigrade, cannot adopt common powder metallurgy method to make.The present embodiment manufacturing processed is as follows: the substrate that earlier the metal spelter is processed into target with the method for mechanical workout, on zinc-base plate 1, evenly process many holes again, the diameter in cavity is 3 millimeters, and the degree of depth is 15 millimeters, and these holes evenly spread all over whole base plate to guarantee the homogeneity of target; Indium oxide powder and gallium oxide powder are mixed according to 1: 1 ratio, the granularity of indium oxide powder and gallium oxide powder is about 2 microns again, utilizes mixer to mix 3 to 5 hours.The powder that mixes is put into columnar mould, and compacting is 1 hour under the pressure of 200MPa, is pressed into the column idiosome of 15 millimeters of 3 millimeters height of diameter.Idiosome after the demoulding is put into sintering oven carry out sintering, sintering temperature is 1560 degrees centigrade, and sintering time is 3 hours.The little Indium sesquioxide gallium ceramics pole 2 that sinters is filled up in the hole of zinc-base plate one by one, so just made the sputtering target material of Indium sesquioxide gallium zinc.
As shown in Figure 2, another embodiment of the invention is the sputtering target material for preparing Indium sesquioxide gallium zinc with this method, this embodiment and embodiment 1 difference are to change Indium sesquioxide gallium ceramics pole into Indium sesquioxide ceramics pole and gallium oxide ceramics pole, insert respectively in the hole of zinc-base plate, the Indium sesquioxide ceramics pole is adjacent with the gallium oxide ceramics pole alternately to be arranged.The present embodiment manufacturing processed is as follows: the substrate that is processed into target earlier with the metal spelter with the method for mechanical workout, on zinc-base plate 1, evenly process many holes again, the diameter in cavity is 3 millimeters, and the degree of depth is 15 millimeters, and these holes evenly spread all over whole base plate to guarantee the homogeneity of target.Indium oxide powder is put into columnar mould, and compacting is 1 hour under the pressure of 200MPa, is pressed into the column idiosome of 15 millimeters of 3 millimeters height of diameter.Idiosome after the demoulding is put into sintering oven carry out sintering, sintering temperature is 1600 degrees centigrade, and sintering time is 3 hours.Again the gallium oxide powder is put into columnar mould, compacting is 1 hour under the pressure of 200MPa, is pressed into the column idiosome of 15 millimeters of 3 millimeters height of diameter.Idiosome after the demoulding is put into sintering oven carry out sintering, sintering temperature is 1500 degrees centigrade, and sintering time is 3 hours.The little Indium sesquioxide ceramics pole 2 and the gallium oxide ceramics pole 3 that sinter are filled up in the hole of zinc-base plate one by one, and Indium sesquioxide ceramics pole 2 and gallium oxide ceramics pole 3 adjacent replacing are arranged, and have so just made the sputtering target material of Indium sesquioxide gallium zinc.
Claims (2)
1. the sputtering target material of a multi-component oxide and manufacture method thereof, it is characterized in that, comprise by the high metal target substrate of fusing point high stability, a plurality of holes evenly are set on the target substrate, and in hole, fill in the oxide ceramics post that the oxide powder of the metal of or easy oxidation low by fusing point sinters into through mould compacting, idiosome.
2. the manufacture method of the sputtering target material of the described multi-component oxide of claim 1 is characterized in that, step of manufacturing:
1) according to the composition of required sputtering target material, select for use melting temperature greater than 100 ℃ metal as the metal substrate material, be processed into the shape of target with the method for mechanical workout;
2) melting temperature of other components is pressed into column less than the oxide powder of 200 ℃ metal in mould, again the oxide ceramics post that the metal oxide idiosome of column is sintered into;
3) evenly process many holes on described metal substrate, the internal diameter of hole cooperates with described oxide ceramics post external diameter;
4) with the hole on the full described metal substrate of described oxide ceramics plunger.
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| Application Number | Priority Date | Filing Date | Title |
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| CN200810204400A CN101748363A (en) | 2008-12-11 | 2008-12-11 | Sputtering target material of multi-component oxide and manufacturing method thereof |
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| CN200810204400A CN101748363A (en) | 2008-12-11 | 2008-12-11 | Sputtering target material of multi-component oxide and manufacturing method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103373845A (en) * | 2012-04-13 | 2013-10-30 | 光洋应用材料科技股份有限公司 | Indium gallium zinc oxide as well as preparation method and application thereof |
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- 2008-12-11 CN CN200810204400A patent/CN101748363A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103373845A (en) * | 2012-04-13 | 2013-10-30 | 光洋应用材料科技股份有限公司 | Indium gallium zinc oxide as well as preparation method and application thereof |
| CN103373845B (en) * | 2012-04-13 | 2015-03-04 | 光洋应用材料科技股份有限公司 | Indium gallium zinc oxide as well as preparation method and application thereof |
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Application publication date: 20100623 |