CN101746705A - Phase-change material for compositing VO2 nanometer flower structure on silicon wafer and preparation method thereof - Google Patents
Phase-change material for compositing VO2 nanometer flower structure on silicon wafer and preparation method thereof Download PDFInfo
- Publication number
- CN101746705A CN101746705A CN200910200299A CN200910200299A CN101746705A CN 101746705 A CN101746705 A CN 101746705A CN 200910200299 A CN200910200299 A CN 200910200299A CN 200910200299 A CN200910200299 A CN 200910200299A CN 101746705 A CN101746705 A CN 101746705A
- Authority
- CN
- China
- Prior art keywords
- phase
- change material
- silicon chip
- flower structure
- underlay
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a phase-change material for compositing VO2 nano flower structure on silicon wafer and preparation method thereof. The material thereof includes an underlay; the underlay adopts a silicon wafer; a VO2 crystal is grown on the surface of the underlay; the VO2 crystal grows along the direction vertical to the silicon underlay and is of a flower structure; the diameter of the nano flower is 10 mum and the diameter of the pedal is 2 to 3 mum. The preparation method is as follows: mixed aqueous solution of oxalic acid and vanadium pentoxide is reacted in an autoclave so as to obtain the VO2 nano flower structure. The invention has the advantages of low cost, simple growing conditions, high repeatability, safety, etc; the prepared phase-change material takes the silicon wafer as the underlay; the VO2 generated on the underlay is provided with the special nano flower structure; the material can combine the currently mature semiconductor silicon integrated circuit technique for integrating nanometer optoelectronic devices.
Description
Technical field
The present invention relates to photoelectron material, semi-conducting material and device technology field, specifically a kind of VO that on silicon substrate, grows
2Phase-change material of nanometer flower structure and preparation method thereof.
Background technology
VO
2As a kind of thermal induced phase transition compound, near 68 ℃ of temperature t ≈, can present tangible metal-semiconductor phase transformation characteristics under the monocrystalline state.When temperature is lower than 68 ℃, VO
2Be in the semiconductor attitude, be monoclinic structure; When temperature is higher than 68 ℃, VO
2Change metallic state into, have cubic rutile structure, and phase transformation is very fast.Be accompanied by the generation of phase transformation, its many physical propertys are all undergone mutation as refractive index n, reflectivity R and resistivity etc., and wherein the variation amplitude of resistivity especially can be up to 10
4Magnitude is utilized its these characteristics, VO
2Can be widely used in electric switch and light shutter device.As functional material, it has wide application prospects in fields such as TEMP, optical storage, variable reflectivity mirror, lasing safety and smart window.
Recently, people utilize the whole bag of tricks (solwution method, sol-gal process, thermal evaporation etc.) to prepare various VO
2Film and one dimension VO
2Nanostructured, for example, nano wire, the nanometer band, nanometer rods etc., and the phase-change characteristic of these nanostructureds studied.But the method that can be applied to large-scale production seldom, and severe reaction conditions, and production cost is high.
Summary of the invention
One of purpose of the present invention be to provide a kind of on silicon substrate compound VO
2The phase-change material of nanometer flower structure, this material can be used for the integrated nanometer opto-electronic device in conjunction with ripe at present semiconductor silicon integrated circuit technology.
Second purpose of the present invention is to provide the preparation method of above-mentioned material, to solve existing VO
2Preparation method of nano material condition harshness, the problem that cost is high provides a kind of low cost, and high duplication is applicable to the new method of large-scale industrial production.
For achieving the above object, the present invention adopts following technical proposals:
A kind of on silicon chip compound VO
2The phase-change material of nanometer flower structure comprises substrate, it is characterized in that this substrate adopts silicon chip, and its superficial growth has VO
2Crystal; Described VO
2Crystal is along growing perpendicular to the silicon substrate direction.
Above-mentioned VO
2Crystal is a flower-like structure, and the nanometer flower diameter is about 10 μ m, and the petal diameter is 2-3 μ m.
The method for preparing above-mentioned phase-change material comprises following concrete steps:
A, configuration reaction solution
With 0.7～0.9g oxalic acid (C
2H
2O
4) powder is dissolved in the 40ml water, uses magnetic stirrer, powder all after the dissolving, adds 0.2g～0.4g vanadic anhydride (V in solution
2O
5) powder, continue to stir, form orange colour solution;
B, VO grows on silicon chip
2Nanometer flower structure
Earlier the silicon chip that cleans up is put into autoclave, pour above-mentioned solution into autoclave again, will put into air dry oven behind the autoclave good seal, under 150～160 ℃ of temperature, keep reaction 24～36 hours, after the cooling, promptly make compound VO on silicon chip naturally
2The semi-conducting material of nanometer flower structure.
Described reaction is to carry out in the autoclave of sealing.
The present invention compared with prior art, it is low to have a cost, growth conditions is simple, repeatability is high, advantages such as safety, prepared phase-change material with silicon chip as substrate, the VO of generation it on
2Have special nanometer flower structure, this material can be used for the integrated nanometer opto-electronic device in conjunction with ripe at present semiconductor silicon integrated circuit technology.
Description of drawings
Fig. 1 is the X-ray diffractogram of gained phase-change material of the present invention
Fig. 2 is the SEM figure of the embodiment of the invention 1 nanometer flower structure
Fig. 3 is the SEM figure of the embodiment of the invention 1 nanometer flower structure multiplication factor
The specific embodiment
A, configuration reaction solution
With 0.75g oxalic acid (C
2H
2O
4) powder is dissolved in the 40ml water, uses magnetic stirrer, powder all after the dissolving, adds 0.25g vanadic anhydride (V in solution
2O
5) powder, continue to stir, form orange colour solution;
B, VO grows on silicon chip
2Nanometer flower structure
Earlier silicon (100) sheet that cleans up is put into autoclave, more above-mentioned solution is poured into the autoclave of 50ml, will put into air dry oven behind the autoclave good seal, under 160 ℃ of temperature, keep reaction 24 hours, after the cooling, promptly make compound VO on silicon chip naturally
2The phase-change material of nanometer flower structure.
A, configuration reaction solution
With 0.85g oxalic acid (C
2H
2O
4) powder is dissolved in the 40ml water, uses magnetic stirrer, powder all after the dissolving, adds 0.35g vanadic anhydride (V in solution
2O
5) powder, continue to stir, form orange colour solution;
B, VO grows on silicon chip
2Nanometer flower structure
Earlier silicon (111) sheet that cleans up is put into autoclave, more above-mentioned solution is poured into the autoclave of 50ml, will put into air dry oven behind the autoclave good seal, under 150 ℃ of temperature, keep reaction 36 hours, after the cooling, promptly make compound VO on silicon chip naturally
2The phase-change material of nanometer flower structure.
Claims (4)
1. compound VO on silicon chip
2The phase-change material of nanometer flower structure comprises substrate, it is characterized in that this substrate adopts silicon chip, and its superficial growth has VO
2Crystal; Described VO
2Crystal is along growing perpendicular to the substrate direction.
2. phase-change material according to claim 1 is characterized in that above-mentioned VO
2Crystal is a flower-like structure, and the nanometer flower diameter is about 10 μ m, and the petal diameter is 2～3 μ m.
3. the preparation method of the described phase-change material of claim 1 is characterized in that this method comprises following concrete steps:
A, configuration reaction solution
With 0.7～0.9g oxalic acid (C
2H
2O
4) powder is dissolved in the 40ml water, uses magnetic stirrer, powder all after the dissolving, adds 0.2g～0.4g vanadic anhydride (V in solution
2O
5) powder, continue to stir, form orange colour solution;
B, VO grows on silicon chip
2Nanometer flower structure
Earlier the silicon chip that cleans up is put into autoclave, pour above-mentioned solution into autoclave again, will put into air dry oven behind the autoclave good seal, under 150～160 ℃ of temperature, keep reaction 24～36 hours, after the cooling, promptly make compound VO on silicon chip naturally
2The phase-change material of nanometer flower structure.
4. preparation method according to claim 3, it is characterized in that reacting is to carry out in the autoclave of sealing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910200299A CN101746705A (en) | 2009-12-11 | 2009-12-11 | Phase-change material for compositing VO2 nanometer flower structure on silicon wafer and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910200299A CN101746705A (en) | 2009-12-11 | 2009-12-11 | Phase-change material for compositing VO2 nanometer flower structure on silicon wafer and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101746705A true CN101746705A (en) | 2010-06-23 |
Family
ID=42474421
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910200299A Pending CN101746705A (en) | 2009-12-11 | 2009-12-11 | Phase-change material for compositing VO2 nanometer flower structure on silicon wafer and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101746705A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101891250A (en) * | 2010-06-25 | 2010-11-24 | 华东师范大学 | Phase-change material compounded with strip VO2 nanoflower structure on silicon substrate and preparation method thereof |
| CN111293201A (en) * | 2018-12-14 | 2020-06-16 | 广州国显科技有限公司 | Semiconductor structure for laser lift-off and method for manufacturing semiconductor structure |
| CN111834627A (en) * | 2020-07-28 | 2020-10-27 | 湖南工学院 | VO (volatile organic compound)2Nano flower material and preparation method and application thereof |
-
2009
- 2009-12-11 CN CN200910200299A patent/CN101746705A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101891250A (en) * | 2010-06-25 | 2010-11-24 | 华东师范大学 | Phase-change material compounded with strip VO2 nanoflower structure on silicon substrate and preparation method thereof |
| CN111293201A (en) * | 2018-12-14 | 2020-06-16 | 广州国显科技有限公司 | Semiconductor structure for laser lift-off and method for manufacturing semiconductor structure |
| CN111293201B (en) * | 2018-12-14 | 2022-04-26 | 广州国显科技有限公司 | Semiconductor structure for laser lift-off and method for manufacturing semiconductor structure |
| CN111834627A (en) * | 2020-07-28 | 2020-10-27 | 湖南工学院 | VO (volatile organic compound)2Nano flower material and preparation method and application thereof |
| CN111834627B (en) * | 2020-07-28 | 2021-05-25 | 湖南工学院 | VO (volatile organic compound)2Nano flower material and preparation method and application thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102190448B (en) | Composite broadband antireflecting film and preparation method thereof | |
| CN101920996B (en) | Phase-change material with crossed rodlike VO2 nano-structure and preparation method thereof | |
| CN104327827A (en) | Preparation of perovskite quantum dot nanocrystals and application of perovskite quantum dot nanocrystals in quantum dot solar cells | |
| CN109052470B (en) | Inorganic non-lead cesium bismuth halide Cs3Bi2X9Perovskite micron disk and synthesis method thereof | |
| CN108023017A (en) | A kind of monocrystal thin films of organo-mineral complexing perovskite material and its preparation method and application | |
| CN106119960A (en) | Orthorhombic phase two-dimensional layer SiP monocrystalline and the preparation method and applications of thin film | |
| CN114086126B (en) | Monocrystalline solar cell film material and preparation method thereof | |
| CN103253708B (en) | Solvothermal preparation method of niobium pentoxide nanowire by use of acetic acid | |
| CN102383114A (en) | Vanadium dioxide thin film and preparation method thereof | |
| CN101746712B (en) | Phase-change material for compositing VO2 sheet and porous nanometer structure on silicon wafer and preparation method thereof | |
| CN101746705A (en) | Phase-change material for compositing VO2 nanometer flower structure on silicon wafer and preparation method thereof | |
| CN102502825A (en) | Red bayberry-shaped V2O5 nanomaterial and preparation method thereof | |
| CN100582016C (en) | Method of producing LiNbO* nanowire | |
| CN105314672B (en) | A kind of sol-gel process for preparing of Co-doped ZnO nanometer rods | |
| CN102030315A (en) | Method for preparing nano Cu2-xSe array on copper substrate by hydrothermal process | |
| Zhang et al. | Sm doped BiFeO3 nanofibers for improved photovoltaic devices | |
| CN101891250A (en) | Phase-change material compounded with strip VO2 nanoflower structure on silicon substrate and preparation method thereof | |
| CN104966784A (en) | BiFeO3/CH3NH3PbI3 heterostructure ferroelectric photovoltaic film and preparation method thereof | |
| CN102180513B (en) | Method for preparing hexagonal pyramid-like zinc oxide by low temperature combustion synthesis method | |
| CN102219253A (en) | Solution method for preparing zinc oxide with ultra-two-dimensional nano structure | |
| Verma et al. | Characterization of CH3CH2NH3SnI3/TiO2 Heterojunction: Lead-Free Perovskite Solar Cells | |
| CN110776000B (en) | All-inorganic perovskite nanocrystalline, preparation method thereof and application thereof in semiconductor device | |
| CN102126702A (en) | Phase-change material combining hedgehog VO2 nanometer structure on silicon substrate and manufacturing method | |
| CN106848069A (en) | A kind of new TiO2Nano material and preparation method and purposes | |
| CN103774233B (en) | Expose high energy (111) crystal face cubic structure Cu 2the preparation method of Se monocrystal nanowire |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20100623 |