CN101741307B - Dynamic simulation device and method thereof of super and extra high voltage controllable magnetic control shunt reactor - Google Patents
Dynamic simulation device and method thereof of super and extra high voltage controllable magnetic control shunt reactor Download PDFInfo
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Abstract
The invention provides dynamic simulation device and method thereof of a super and extra high voltage controllable magnetic control shunt reactor, wherein the dynamic simulation device is capable of accurately simulating magnetic control shunt reactors with different capacities in 500kV, 750kV and 1,000kV power transmission systems. A simulation body consists of three single-phase magnetic control reactors; each single-phase magnetic control reactor is in a three-column structure; two beside core columns are working iron cores; a main alternating current winding and a direct current control coil are wound on each working iron core; and main alternating current windings on the two iron core columns are connected in parallel and connected to a power grid. Control windings are separated from the main windings so as to ensure the safety and the reliability of the device during work. The main windings are provided with twelve turn-to-turn short circuit taps which can respectively simulate 1-25 percent of turn-to-turn short circuit faults from the high-voltage side and the neutral point side; and the control windings are provided with seven turn-to-turn short circuit taps which can simulate 1-25 percent of turn-to-turn short circuit faults from the neutral point side. The body of the device is provided with a current transformer and a voltage transformer on a primary side, which are used for meeting the requirement for protecting a reactor body in a dynamic simulation test.
Description
Technical Field
The invention relates to a dynamic simulation device and a dynamic simulation method for an extra-high voltage magnetically controlled type controllable shunt reactor, and belongs to the field of dynamic simulation systems of power systems of various voltage classes.
Background
The controllable shunt reactor can automatically adjust the capacity of the controllable shunt reactor along with the change of the transmission power of the line, reduce the overvoltage level of the line operation and improve the operation benefit of a power grid; the method has the advantages of quick response to dynamic stability caused by system disturbance, suppression of voltage fluctuation, improvement of system stability, increase of power transmission capacity and suppression of system power oscillation. The application of the controllable shunt reactor in the ultra-high voltage and extra-high voltage transmission systems has become one of the development directions of power systems. In order to further improve the dynamic simulation capability of the ultra-high voltage and extra-high voltage power transmission technology and expand the simulation range of an alternating current power transmission system, a dynamic simulation laboratory of the national grid simulation center puts the research on the ultra-high voltage and extra-high voltage magnetically controlled shunt reactor dynamic simulation method into the project of the national grid simulation center-dynamic simulation laboratory construction.
Chinese patent application 200620132038.5 discloses a shunt reactor for dynamic simulation experiments, which is a single-phase dry reactor, the iron core structure is a square iron core with two U-shaped iron posts butted, the butted part of the two U-shaped iron posts has a gap, and the iron posts are not completely cylindrical. The winding comprises 4 sub-windings, each sub-winding comprises 18 layers, and each layer comprises 23 turns; the first sub-winding takes out one head every two layers, the second and third sub-windings do not add middle taps, and the fourth sub-winding adds 1 tap at the last 23 turns.
Patent 200620132038.5 is a fixed capacity paralleling reactor simulator which once its capacity is set to be unchangeable during operation, the device cannot be used for the inspection test work of the body protection of the controllable paralleling reactor device and the line protection with the controllable paralleling reactor device.
The simulation device and the method thereof can realize manual or automatic capacity switching control in the operation process according to the system condition, make corresponding capacity adjustment according to the line protection and the line switch operation condition, and can complete the inspection test work of the body protection of the magnetic control type controllable shunt reactor device and the line protection with the magnetic control type controllable shunt reactor device by combining the dynamic simulation test method in the patent.
Disclosure of Invention
The invention aims to research a dynamic simulation method of an ultra-high voltage and extra-high voltage magnetically controlled controllable parallel reactor and design a dynamic simulation device capable of accurately simulating magnetically controlled controllable parallel reactors with different capacities in 500kV, 750kV and 1000kV power transmission systems on the basis of referring to the structure and function of a 500kV magnetically controlled controllable parallel reactor already put into operation in China and simultaneously considering the technical situation of the future magnetically controlled controllable parallel reactor applied in 750kV and 1000kV power transmission systems.
The technical scheme of the invention is that the dynamic simulation device of the ultra-high voltage magnetic controlled controllable shunt reactor comprises: the device comprises a single-phase magnetic control reactor, a high-voltage side winding, a neutral point small reactor, an excitation winding, a rectifying unit, a rectifying transformer, a microcomputer controller, an upper computer and a vacuum contactor; wherein,
the body of the simulation device consists of three single-phase magnetically controlled reactors, each single-phase magnetically controlled reactor is of a three-column structure, two adjacent core columns are working iron cores, each working iron core is wound with an alternating current main winding and a direct current control coil, and the alternating current main windings on the two core columns are connected in parallel and then connected to a power grid; the alternating current main winding of the three-phase magnetic control reactor is in a Y0 star connection mode, and a neutral point is grounded through a small reactor or directly grounded; the three-phase excitation windings are connected into a double triangle, and a direct current control end is led out from the vertex of the triangle; the excitation winding is electrically isolated from the high-voltage side winding, so that the working safety and reliability of the simulation device are ensured; the simulation device adopts a mode of externally adding direct current excitation control current to change the output capacity of the reactor, the rectifying unit consists of two thyristor modules to form a single-phase controllable rectifying circuit, the rectifying transformer converts the input 220V alternating current into 36V and then accesses the controllable rectifying circuit, meanwhile, the synchronous unit of the controller is accessed, the controller outputs four groups of control pulses to a thyristor of the rectifying unit, the size of the excitation current is changed by changing the conduction angle of the thyristor, and the direct current voltage output by rectification is directly connected with an injection port of the excitation circuit of the controllable reactor;
the alternating current main windings of the three single-phase magnetically controlled reactors are provided with 12 turn-to-turn short-circuit taps, 1% -25% of turn-to-turn short-circuit faults can be simulated from a high-voltage side and a neutral point side respectively, and the exciting windings of the three single-phase magnetically controlled reactors are provided with 7 turn-to-turn short-circuit taps, and 1% -25% of turn-to-turn short-circuit faults can be simulated from the neutral point side.
A current transformer and a voltage transformer are arranged on the primary side of the simulator body and used for meeting the requirement of protection of the reactor body in a dynamic simulation test.
The simulation device uses the following technology:
(1) the maximum output capacity control technology of the analog device is realized by setting the rated operating voltage and the rated output current of the reactor in a microcomputer controller and indirectly calculating the maximum output capacity of the reactor, and when the system operating voltage changes during actual operation, the maximum current value allowed to be output by the reactor also linearly changes, namely the maximum output capacity value of the reactor also changes;
(2) the method can be set to be put in or withdrawn according to a set value control output capacity technology, when the method is put in, no matter what value the output capacity of the controllable parallel reactor is, the size of the output capacity of the controllable reactor can be set through a microcomputer controller, the set range is 0-100% rated capacity, after the setting is completed, the microcomputer controller automatically controls the controllable reactor to adjust the output capacity to the set value, and the output capacity of the reactor can be manually adjusted through adjusting a button for increasing a control angle and reducing the control angle;
(3) the method comprises the steps that the output capacity is controlled according to a line voltage target, the mode can be set to be switched on or switched off, when the mode is switched on, a target voltage value of a line can be set through a microcomputer controller, the microcomputer controller automatically adjusts the output capacity of a controllable reactor, the line voltage is maintained at the set target value as much as possible, if the reactor outputs the maximum capacity value, the line voltage is still higher than the target value, the reactor does not increase exciting current any more, and if the reactor reduces the control exciting current to 0, the line voltage is still lower than the target value, the reactor does not adjust the exciting current any more;
(4) the technology of controlling the output capacity according to the line trend target can be set as input or exit, when the method is input, the reactive power value of the line can be set through a microcomputer controller, the microcomputer controller automatically adjusts the output capacity of the controllable reactor, and the reactive power of the line is maintained at the set target value as much as possible;
(5) the method is characterized in that a special control technology is carried out according to the state of a switching value, after a system has a fault and a protection outlet and a line switch act, a controllable reactor quickly adjusts the output capacity to a preset value, the set value can be changed and set through a microcomputer controller, after a switching signal is reset, the reactor recovers to the previous operation mode to continue to work, the mode is required to be overlapped with the control modes (2), (3) and (4) for use, when the protection is set to be 0, the displacement of the switching value of the protection outlet is not considered, only when the protection function is set to be 1, the protection function is effective, and the dynamic simulation device is combined with dynamic simulation systems with different voltage levels to realize the dynamic simulation of the magnetically controlled controllable shunt reactors in 500kV, 750kV and 1000kV power transmission systems.
The invention also provides a test method using the ultra-high voltage magnetic controlled type controllable shunt reactor dynamic simulation device, which is characterized by comprising the following steps:
(1) carrying out parameter design of a dynamic simulation device of the ultra-high voltage and extra-high voltage magnetically controlled type controllable shunt reactor device according to the simulation voltage grade:
when the controllable parallel reactor TA transformation ratio k is applied to a 500kV power transmission line, the controllable parallel reactor TA transformation ratio k in an actual systemI.rTV transformation ratio kU.r(ii) a TA transformation ratio k is selected to controllable shunt reactor of laboratory moving die systemI.mTV transformation ratio kU.mAnd then the capacity ratio of the controllable shunt reactor to the laboratory dynamic simulation device in the actual system is as follows:
the capacity of a controllable shunt reactor with the capacity of X in a simulated actual system is as follows:
Mm＝X/kM (4-2)；
when the controllable parallel reactor TA transformation ratio k is used for simulating the controllable parallel reactor in the 750kV power transmission line, the controllable parallel reactor TA transformation ratio k in an actual systemI.rTV transformation ratio kU.r(ii) a TA transformation ratio k is selected to controllable shunt reactor of laboratory moving die systemI.mTV transformation ratio kU.mAnd then the capacity ratio of the controllable shunt reactor to the laboratory dynamic simulation device in the actual system is as follows:
the maximum simulatable 750kV controllable parallel reactor rated capacity of the dynamic simulation device is as follows:
Mr′＝Mm×kM′ (4-4)；
when the controllable parallel reactor TA transformation ratio k is used for simulating the controllable parallel reactor in the 1000kV power transmission lineI.rTV transformation ratio kU.r(ii) a TA transformation ratio k is selected to controllable shunt reactor of laboratory moving die systemI.mTV transformation ratio kU.mAnd then the capacity ratio of the controllable shunt reactor to the laboratory dynamic simulation device in the actual system is as follows:
the maximum capacity capable of simulating a 1000kV controllable parallel reactor is as follows:
Mr″＝Mm×kM″............................(4-6)；
(2) design system model
Adopt the generator to simulate circuit one side equivalence power plant in the model, adopt the equivalence system of equivalence power supply analog line opposite side, controllable shunt reactor's dynamic simulation device and body protection are installed in one side of circuit, line protection is installed in the circuit both sides, 4 fault points are set up altogether at the both ends of test circuit and centre, each fault point all is used for simulating various types of metallicity or the trouble through the transient resistance short circuit, controllable shunt reactor dynamic simulation device's once side sets up a fault point, be used for simulating different scope turn-to-turn short circuits, the voltage of circuit, current signal conveys line protection device through simulation capacitor voltage transformer and simulation electromagnetic type current transformer, then the simulation test project of going on includes:
(a) carrying out a manual capacity control test on the controllable shunt reactor device, manually setting the output capacity of the controllable shunt reactor device, and monitoring whether the output capacity can track the set capacity;
(b) carrying out automatic capacity control test on the controllable shunt reactor device, setting the controllable shunt reactor device into an automatic control mode, adjusting line voltage and active and reactive power transmitted by a system, and monitoring whether the adjustment control process of the controllable shunt reactor device is correct or not;
(c) performing power failure protection and recovery tests on the controllable shunt reactor device, disconnecting a direct-current power supply protected by the controllable shunt reactor device, and monitoring the working state of the controllable shunt reactor device in the power failure protection process; switching in a disconnected direct-current power supply, and monitoring the working state of the controllable shunt reactor device in the process of restoring the direct-current power supply by the protection system;
(d) performing a metallic instantaneous fault test on the line, and simulating metallic instantaneous single-phase grounding, two-phase short circuit, three-phase grounding and three-phase short circuit tests;
(e) the method comprises the steps of conducting an on-line developmental fault test, simulating the developmental faults that the same fault point in a protection area develops into a two-phase earth fault from a single-phase earth fault at different time, and the single-phase earth fault occurs between the exit of a protected line and the different phase of the adjacent line exit in sequence at different time, and controlling the shunt reactor device to be in turn-to-turn relation with the same phase of the line at different time
The time intervals of the progressive faults which occur successively are 0-200 ms respectively;
(f) performing a transition resistor fault test on the line, and simulating an intra-area single-phase ground fault, an intra-area inter-phase short-circuit fault and an extra-area inter-phase short-circuit fault of transition resistors with different resistance values;
(g) carrying out a system stability destruction test to simulate full-phase oscillation caused by system static stability destruction and dynamic stability destruction, non-full-phase oscillation process after a line switch single-phase stealing trip and a single-phase fault protection action trip of a single phase, and internal and external faults in the full-phase and non-full-phase oscillation processes;
(h) carrying out a hand-in and hand-out fault test, setting the output capacity of a simulation device of the controllable shunt reactor device as a rated value, and simulating the hand-in and hand-out of various types of faults;
(i) performing a wire breakage test to simulate the wire breakage of a TV and TA secondary circuit on one side and various faults inside and outside a broken area;
(j) carrying out TA saturation tests to simulate saturation of TA at different degrees caused by faults outside a protection circuit area and saturation of TA at different degrees caused by faults inside the protection circuit area;
(k) performing transient overtaking test, testing the line distance protection only, respectively setting the impedance constant value of the protection device to 105% and 95% of the protection area, and simulating various metallic faults at different fault moments at the tail end of the protection area;
(l) Carrying out turn-to-turn short circuit test on the controllable shunt reactor device, and dynamically simulating turn-to-turn short circuit faults with different turns on the primary side of the device;
(m) carrying out a system frequency offset test, wherein when the system frequency is 48Hz and 52Hz, the metal faults inside and outside the simulation area are simulated.
The invention has the beneficial effects that:
1. the dynamic simulation of the magnetically controlled controllable shunt reactor with different voltage grades and different capacities can be completed through the unique design.
2. The inter-turn short-circuit tap and the arrangement of the voltage and current transformers are combined with various control technologies, so that the experimental research requirement on the protection of the magnetic control type controllable shunt reactor body can be met, and the research requirement on a power transmission system with the magnetic control type controllable shunt reactor can also be met.
Drawings
The invention is further described below with reference to the accompanying drawings.
FIG. 1 is a schematic wiring diagram of a dynamic simulation device of an extra-high voltage magnetically controlled shunt reactor according to the invention.
FIG. 2 is a schematic diagram of an iron core structure of the ultra-high voltage magnetically controlled shunt reactor dynamic simulation device according to the invention.
FIG. 3 is a back plate structure of a microcomputer controller of the ultra-high voltage magnetically controlled shunt reactor dynamic simulation device according to the invention.
FIG. 4 is a control schematic diagram of the ultra-high voltage magnetically controlled shunt reactor dynamic simulation device according to the invention.
Detailed Description
1. According to the simulation capacity ratio of 500kV, 750kV and 1000kV dynamic simulation systems of the dynamic simulation laboratory of the national power grid simulation center,
and (4) carrying out parameter design on the ultra-high voltage magnetic control type controllable shunt reactor dynamic simulation device.
Considering the situation of being applied to 500kV power transmission line, the TA transformation ratio k of the controllable shunt reactor in the practical systemI.r500/1, TV transformation ratio kU.r500/0.1; TA transformation ratio k is selected to controllable shunt reactor of laboratory moving die systemI.m2/1, TV transformation ratio kU.m1.5/0.1, the capacity ratio of the controllable shunt reactor to the laboratory dynamic simulation device in the actual system is as follows:
the capacity of a controllable shunt reactor with capacity of 180Mvar in a simulated actual system is as follows:
Mm＝180Mvar/83333.3＝2.16Kvar...................(2)
when the controllable parallel reactor TA transformation ratio k is used for simulating the controllable parallel reactor in the 750kV power transmission line, the controllable parallel reactor TA transformation ratio k in the actual systemI.r800/1, TV transformation ratio kU.r750/0.1; TA transformation ratio k is selected to controllable shunt reactor of laboratory moving die systemI.m2/1, TV transformation ratio kU.m1.5/0.1, the capacity ratio of the controllable shunt reactor to the laboratory dynamic simulation device in the actual system is as follows:
the maximum simulatable 750kV controllable parallel reactor rated capacity of the dynamic simulation device is as follows:
Mr′＝2.16Kvar×200000＝432Mvar...................(4)
when the controllable parallel reactor TA transformation ratio k is used for simulating the controllable parallel reactor in the 1000kV power transmission lineI.r1000/1, TV transformation ratio kU.r1000/0.1; TA transformation ratio k is selected to controllable shunt reactor of laboratory moving die systemI.m2/1, TV transformation ratio kU.m1.5/0.1, the capacity ratio of the controllable shunt reactor to the laboratory dynamic simulation device in the actual system is as follows:
the maximum capacity capable of simulating a 1000kV controllable parallel reactor is as follows:
Mr″＝2.16Kvar×333333.3＝720Mvar...................(6)
2. and designing the body structure and the control system of the ultra-high voltage magnetic controlled type controllable shunt reactor dynamic simulation device according to actual engineering and research requirements.
FIG. 1 is a schematic wiring diagram of a dynamic simulation device of an ultra-high voltage magnetically controlled shunt reactor, which consists of 8 parts in total: 1. the high-voltage side winding comprises a high-voltage side winding 2, a neutral point small reactor 3, an excitation winding 4, a rectifying unit 5, a rectifying transformer 6, a microcomputer controller 7, an upper computer 8 and a vacuum contactor. In the figure, TV1 is a voltage transformer, and LH 1-LH 8 are current transformers.
The rated capacity of the dynamic simulation device is 2.16Kvar (single-phase capacity is 0.72Kvar), the short-circuit impedance percentage is 63 percent, and the rated voltage of the primary side is calculated according to the actual condition of a laboratory dynamic simulation system
The rated voltage of the secondary side (control winding) is 220V, and the capacity regulating range of the reactor is 0-100%.
The dynamic simulation device body is composed of three single-phase magnetically controlled reactors, each single-phase reactor is of a three-column structure, two core columns beside the reactor are working iron cores, each working iron core is wound with an alternating current main winding and a direct current control coil, and the alternating current main windings on the two core columns are connected in parallel and then connected to a power grid. The alternating current main winding of the three-phase magnetic control reactor group is in a Y0 star connection mode, and the neutral point is directly grounded. The dynamic simulation device adopts a mode of externally adding direct current excitation control current to change the output capacity of the reactor, the direct current excitation unit consists of two thyristor modules to form a single-phase controllable rectification loop, an excitation transformer converts the input 220V alternating current into 36V alternating current and then accesses the controllable rectification loop, meanwhile, a synchronization unit of a controller is accessed, the controller outputs four groups of control pulses, the four groups of control pulses are isolated by the pulse transformer and then are connected to the control end of the thyristor, and the rectified output direct current voltage is directly connected with an excitation loop injection port of the controllable reactor. The magnitude of the exciting current is changed by changing the conduction angle of the thyristor.
Fig. 2 is a schematic diagram of an iron core structure of the ultra-high voltage magnetically controlled controllable parallel reactor dynamic simulation device according to the invention, each single-phase reactor is of a three-column structure, two adjacent core columns are working iron cores, each working iron core is wound with an alternating current main winding and a direct current control coil, and the alternating current main windings on the two core columns are connected in parallel and then connected to a power grid.
The specific design parameters are as follows:
(1) iron core
The iron core structure of the dynamic simulation device is a three-column type,
main core diameter (circular): d100 (mm)
Main (large) core sectional area:
A＝69.94(cm2)
small cross-sectional area：
Upper and lower yoke cross-sectional areas (circular): a. thee＝69.94(cm2)
Middle column cross-sectional area (square): <math>
<mrow>
<msub>
<mi>A</mi>
<mi>p</mi>
</msub>
<mo>=</mo>
<mfrac>
<mrow>
<mn>2</mn>
<mo>×</mo>
<mn>69.94</mn>
</mrow>
<mn>3</mn>
</mfrac>
<mo>=</mo>
<mn>46.63</mn>
<mrow>
<mo>(</mo>
<msup>
<mi>cm</mi>
<mn>2</mn>
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(2) coil
Main coil
Primary current:
number of coil turns: n1010 (turns)
Controlling a coil:
Nk256 (turns)
Small cross-sectional length of iron core magnetic valve:
lt＝1.5(mm)
in order to test the characteristics of the magnetically controlled type controllable shunt reactor under the fault condition, 12 taps are arranged on a main winding of the simulated magnetically controlled reactor, and the magnetically controlled reactor is mainly used for turn-to-turn short circuit tests. The positions of the taps from the neutral point are as follows: 0. 1%, 3%, 6%, 10%, 15%, 25%, 50%, 75%, 90%, 94%, 97%, 99%, 100%, and the tap arrangement facilitates connection with an external cable. The control winding is provided with 7 taps, which are 1%, 3%, 6%, 10%, 25%, 50%, 75%, 100% corresponding to the primary side.
A current transformer and a voltage transformer used for protecting the device are arranged on the primary side of the dynamic simulation device body. The primary TA transformation ratio is 2: 1, and the primary TV transformation ratio is 1500: 100.
Fig. 3 is a back plate structure of a microcomputer controller of the ultra-high voltage magnetically controlled shunt reactor dynamic simulation device according to the invention, which comprises seven back insertion plates, namely a standby plate F, a main control plate A, I sensor plate C, II sensor D, an in-out plate B, a power supply plate E and a standby plate G. Two switches on the power panel are respectively a controller working power switch and a +24V power switch for controlling pulse output.
The I sensor board measures the three-phase voltage and three-phase current of the system, calculates the active and reactive values of the system and the like, and transmits the result to the CPU of the main control board in a point-to-point communication mode; the No. II sensor board measures three-phase primary current output by the reactor and the size of the injected exciting current, and transmits the three-phase primary current and the size of the injected exciting current to the CPU of the main control board through point-to-point communication; the physical node is used for detecting information of various switching values and outputting control state information through a G6B relay; the main control board outputs a pulse control signal to control the output current of the excitation unit, thereby controlling the output capacity of the reactor.
FIG. 4 is a control schematic diagram of the ultra-high voltage magnetically controlled shunt reactor dynamic simulation device according to the invention, the microcomputer controller of the reactor controls pulse signals M0, M1, M2 to be respectively connected with corresponding terminals of the thyristor control box, the output of the thyristor control box is directly connected with the injection port of the reactor to control the size of the exciting current.
3. The method is a simulation test method for researching and determining the combination of the ultra-high voltage and extra-high voltage magnetically controlled shunt reactor dynamic simulation device and dynamic simulation systems with different voltage grades.
(1) And building a dynamic analog simulation system consisting of an analog power transmission line, an analog transformer, an analog generator, an analog power supply and an analog load according to the specific voltage class.
(2) And calculating the rated capacity of the required shunt reactor according to the parameters of the power transmission line and the compensation degree of the capacitive reactive power.
(3) The maximum output capacity and the capacity adjusting mode of the ultra-high voltage and extra-high voltage magnetically controlled shunt reactor dynamic simulation device and the instant adjusting capacity during line faults are set through the control device.
(4) And electrifying the dynamic analog simulation system, closing the alternating current contactor through the control device, putting the device into operation, and controlling the system voltage.
(5) And simulating the transmission line fault and checking the line protection action condition.
(6) And (3) simulating turn-to-turn short circuit faults of the ultra-high voltage magnetic control type controllable shunt reactor dynamic simulation device, and checking the protection action condition of the controllable reactor body.
The invention has been described herein with reference to specific exemplary embodiments thereof. It will be apparent to those skilled in the art that appropriate substitutions or modifications may be made without departing from the scope of the invention. The exemplary embodiments are merely illustrative, and not restrictive of the scope of the invention, which is defined by the appended claims.
Claims (4)
1. A kind of ultra, extra-high voltage magnetic controlled controllable shunt reactor dynamic analog device, characterized by that the apparatus includes: the device comprises a single-phase magnetic control reactor, a high-voltage side winding, a neutral point small reactor, an excitation winding, a rectifying unit, a rectifying transformer, a microcomputer controller, an upper computer and a vacuum contactor; wherein,
the body of the simulation device consists of three single-phase magnetically controlled reactors, each single-phase magnetically controlled reactor is of a three-column structure, two adjacent core columns are working iron cores, each working iron core is wound with an alternating current main winding and a direct current control coil, and the alternating current main windings on the two core columns are connected in parallel and then connected to a power grid; the alternating current main winding of the three-phase magnetic control reactor is in a Y0 star connection mode, and a neutral point is grounded through a small reactor or directly grounded; the three-phase excitation windings are connected into a double triangle, and a direct current control end is led out from the vertex of the triangle; the excitation winding is electrically isolated from the high-voltage side winding, so that the working safety and reliability of the simulation device are ensured; the simulation device adopts a mode of externally adding direct current excitation control current to change the output capacity of the reactor, the rectifying unit consists of two thyristor modules to form a single-phase controllable rectifying circuit, the rectifying transformer converts the input 220V alternating current into 36V and then accesses the controllable rectifying circuit, meanwhile, the synchronous unit of the controller is accessed, the controller outputs four groups of control pulses to a thyristor of the rectifying unit, the size of the excitation current is changed by changing the conduction angle of the thyristor, and the direct current voltage output by rectification is directly connected with an injection port of the excitation circuit of the controllable reactor;
the alternating current main windings of the three single-phase magnetically controlled reactors are provided with 12 turn-to-turn short-circuit taps, 1% -25% of turn-to-turn short-circuit faults can be simulated from a high-voltage side and a neutral point side respectively, and the exciting windings of the three single-phase magnetically controlled reactors are provided with 7 turn-to-turn short-circuit taps, and 1% -25% of turn-to-turn short-circuit faults can be simulated from the neutral point side.
2. The apparatus of claim 1, wherein the analog device body is provided with a current transformer and a voltage transformer on the primary side for satisfying the protection requirement of the reactor body in the dynamic analog test.
3. The apparatus of claim 2, wherein the following modes are used in the simulation apparatus:
(1) the simulation device maximum output capacity control mode is realized by setting the rated operating voltage and the rated output current of the reactor in the microcomputer controller and indirectly calculating the maximum output capacity of the reactor, and when the system operating voltage changes during actual operation, the maximum current value allowed to be output by the reactor also linearly changes, namely the maximum output capacity value of the reactor also changes;
(2) the output capacity mode is controlled according to a set value, the mode can be set to be switched in or switched out, when the mode is switched in, no matter what value the output capacity of the controllable parallel reactor is, the size of the output capacity of the controllable reactor can be set through the microcomputer controller, the set range is 0-100% rated capacity, after the setting is completed, the microcomputer controller automatically controls the controllable reactor to adjust the output capacity to the set value, and the output capacity of the reactor can be manually adjusted through adjusting a button for increasing a control angle and reducing the control angle;
(3) controlling an output capacity mode according to a line voltage target, wherein the mode can be set to be put in or quit, when the mode is put in, a target voltage value of a line can be set through a microcomputer controller, the microcomputer controller automatically adjusts the output capacity of a controllable reactor, the line voltage is maintained at the set target value as much as possible, if the reactor outputs the maximum capacity value, the line voltage is still higher than the target value, the reactor does not increase exciting current any more, and if the reactor reduces the control exciting current to 0, the line voltage is still lower than the target value, the reactor does not adjust the exciting current any more;
(4) controlling an output capacity mode according to a line power flow target, wherein the mode can be set to be put in or quit, when the mode is put in, a reactive power value of a line can be set through a microcomputer controller, and the microcomputer controller automatically adjusts the output capacity of a controllable reactor to maintain the reactive power of the line at the set target value as much as possible;
(5) the method comprises the steps of carrying out a special control mode according to the state of a switching value, after a system has a fault and a protection outlet and a line switch act, quickly adjusting the output capacity of a controllable reactor to a preset value, changing the setting value through a microcomputer controller, after a switching signal is reset, recovering the reactor to the previous operation mode to continue working, requiring the mode to be superposed with the control modes (2), (3) and (4) for use, when the protection is set to be 0, not considering the displacement of the switching value of the protection outlet, and only when the protection function is set to be 1, enabling the protection function to be effective, wherein the dynamic simulation device is combined with dynamic simulation systems with different voltage levels to realize the dynamic simulation of the magnetically controlled controllable shunt reactors in 500kV, 750kV and 1000kV power transmission systems.
4. A test method using the ultra-high voltage magnetically controlled shunt reactor dynamic simulation device as claimed in any one of claims 1 to 3 is characterized by comprising the following steps:
(1) carrying out parameter design of a dynamic simulation device of the ultra-high voltage and extra-high voltage magnetically controlled type controllable shunt reactor device according to the simulation voltage grade:
when the controllable parallel reactor TA transformation ratio k is applied to a 500kV power transmission line, the controllable parallel reactor TA transformation ratio k in an actual systemI.rTV transformation ratio kU.r(ii) a TA transformation ratio k is selected to controllable shunt reactor of laboratory moving die systemI.mTV transformation ratio kU.mAnd then the capacity ratio of the controllable shunt reactor to the laboratory dynamic simulation device in the actual system is as follows:
the capacity of a controllable shunt reactor with the capacity of X in a simulated actual system is as follows:
Mm＝X/kM (4-2)；
when the controllable parallel reactor TA transformation ratio k is used for simulating the controllable parallel reactor in the 750kV power transmission line, the controllable parallel reactor TA transformation ratio k in an actual systemI.rTV transformation ratio kU.r(ii) a TA transformation ratio k is selected to controllable shunt reactor of laboratory moving die systemI.mTV transformation ratio kU.mAnd then the capacity ratio of the controllable shunt reactor to the laboratory dynamic simulation device in the actual system is as follows:
the maximum simulatable 750kV controllable parallel reactor rated capacity of the dynamic simulation device is as follows:
Mr′＝Mm×kM′ (4-4)；
when the controllable parallel reactor TA transformation ratio k is used for simulating the controllable parallel reactor in the 1000kV power transmission lineI.rTV transformation ratio kU.r(ii) a Fruit of Chinese wolfberryTA transformation ratio k is selected to controllable shunt reactor of laboratory moving die systemI.mTV transformation ratio kU.mAnd then the capacity ratio of the controllable shunt reactor to the laboratory dynamic simulation device in the actual system is as follows:
the maximum capacity capable of simulating a 1000kV controllable parallel reactor is as follows:
Mr″＝Mm×kM″............................(4-6)；
(2) design system model
Adopt the generator to simulate circuit one side equivalence power plant in the model, adopt the equivalence system of equivalence power supply analog line opposite side, controllable shunt reactor's dynamic simulation device and body protection are installed in one side of circuit, line protection is installed in the circuit both sides, 4 fault points are set up altogether at the both ends of test circuit and centre, each fault point all is used for simulating various types of metallicity or the trouble through the transient resistance short circuit, controllable shunt reactor dynamic simulation device's once side sets up a fault point, be used for simulating different scope turn-to-turn short circuits, the voltage of circuit, current signal conveys line protection device through simulation capacitor voltage transformer and simulation electromagnetic type current transformer, then the simulation test project of going on includes:
(a) carrying out a manual capacity control test on the controllable shunt reactor device, manually setting the output capacity of the controllable shunt reactor device, and monitoring whether the output capacity can track the set capacity;
(b) carrying out automatic capacity control test on the controllable shunt reactor device, setting the controllable shunt reactor device into an automatic control mode, adjusting line voltage and active and reactive power transmitted by a system, and monitoring whether the adjustment control process of the controllable shunt reactor device is correct or not;
(c) performing power failure protection and recovery tests on the controllable shunt reactor device, disconnecting a direct-current power supply protected by the controllable shunt reactor device, and monitoring the working state of the controllable shunt reactor device in the power failure protection process; switching in a disconnected direct-current power supply, and monitoring the working state of the controllable shunt reactor device in the process of restoring the direct-current power supply by the protection system;
(d) performing a metallic instantaneous fault test on the line, and simulating metallic instantaneous single-phase grounding, two-phase short circuit, three-phase grounding and three-phase short circuit tests;
(e) carrying out an on-line developmental fault test, simulating the developmental faults that the same fault point in a protection area develops into a two-phase earth fault from a single-phase earth fault at different time, and the single-phase earth faults occur successively at different time between the exit of the protected line and the different phase of the adjacent line exit, and simulating the developmental faults that the controllable shunt reactor device fails successively at different time between the inter-turn phase and the same phase of the line, wherein the time intervals of successive failures are 0-200 ms respectively;
(f) performing a transition resistor fault test on the line, and simulating an intra-area single-phase ground fault, an intra-area inter-phase short-circuit fault and an extra-area inter-phase short-circuit fault of transition resistors with different resistance values;
(g) carrying out a system stability destruction test to simulate full-phase oscillation caused by system static stability destruction and dynamic stability destruction, non-full-phase oscillation process after a line switch single-phase stealing trip and a single-phase fault protection action trip of a single phase, and internal and external faults in the full-phase and non-full-phase oscillation processes;
(h) carrying out a hand-in and hand-out fault test, setting the output capacity of a simulation device of the controllable shunt reactor device as a rated value, and simulating the hand-in and hand-out of various types of faults;
(i) performing a wire breakage test to simulate the wire breakage of a TV and TA secondary circuit on one side and various faults inside and outside a broken area;
(j) carrying out TA saturation tests to simulate saturation of TA at different degrees caused by faults outside a protection circuit area and saturation of TA at different degrees caused by faults inside the protection circuit area;
(k) performing transient overtaking test, testing the line distance protection only, respectively setting the impedance constant value of the protection device to 105% and 95% of the protection area, and simulating various metallic faults at different fault moments at the tail end of the protection area;
(l) Carrying out turn-to-turn short circuit test on the controllable shunt reactor device, and dynamically simulating turn-to-turn short circuit faults with different turns on the primary side of the device;
(m) carrying out a system frequency offset test, wherein when the system frequency is 48Hz and 52Hz, the metal faults inside and outside the simulation area are simulated.
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| CN102097813B (en) * | 2011-03-18 | 2013-03-20 | 鞍山市恒力电气设备制造有限公司 | Hybrid excitation triggered double exciting winding MCR (magnetically controlled reactor) |
| CN102313850B (en) * | 2011-06-24 | 2014-07-23 | 中国电力科学研究院 | Physical real-time dynamic simulation device for flexible direct current transmission system |
| CN103383419B (en) * | 2013-04-19 | 2016-02-24 | 国家电网公司 | A kind of controllable magnetic control shunt reactor combine regulation test unit |
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| DE102015102727A1 (en) * | 2015-02-25 | 2016-08-25 | Maschinenfabrik Reinhausen Gmbh | Method for changing the active number of turns of a control winding in an electrical system and electrical system with a control winding |
| CN105699840A (en) * | 2016-03-09 | 2016-06-22 | 珠海蓝瑞盟电气有限公司 | Method for judging inter-turn short-circuit fault of reactor |
| CN109100600B (en) * | 2018-09-06 | 2020-01-10 | 华北电力大学 | Magnetic control type shunt reactor fault determination method and system |
| CN110489929B (en) * | 2019-09-06 | 2023-06-20 | 中国南方电网有限责任公司超高压输电公司南宁局 | Simulation model and modeling and simulation method for turn-to-turn faults of hollow shunt reactor |
| CN111537844A (en) * | 2020-04-24 | 2020-08-14 | 国网辽宁省电力有限公司电力科学研究院 | 10kV magnetic bias superconducting current limiter grid-connected fault current limiting test system and method |
| CN112486035A (en) * | 2020-11-18 | 2021-03-12 | 上海电力大学 | Software and hardware simulation system for early fault research of transformer |
| CN112834955A (en) * | 2021-02-23 | 2021-05-25 | 国网山西省电力公司电力科学研究院 | Dry-type air-core reactor turn-to-turn short circuit fault simulation device and fault simulation method |
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