CN101740604A - Pixel structure for active matrix organic light-emitting diode and manufacturing method thereof - Google Patents
Pixel structure for active matrix organic light-emitting diode and manufacturing method thereof Download PDFInfo
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- CN101740604A CN101740604A CN200810226095A CN200810226095A CN101740604A CN 101740604 A CN101740604 A CN 101740604A CN 200810226095 A CN200810226095 A CN 200810226095A CN 200810226095 A CN200810226095 A CN 200810226095A CN 101740604 A CN101740604 A CN 101740604A
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Abstract
The invention relates to a pixel structure for an active matrix organic light-emitting diode and a manufacturing method thereof. The pixel structure for the active matrix organic light-emitting diode comprises a first grid line, a signal line and a power line which are formed on a substrate and limit a pixel region, wherein a first thin film transistor, a second thin film transistor, a pixel electrode and a public electrode line are formed in the pixel region respectively; and a first drain electrode of the first thin film transistor is used as a gate electrode of the second thin film transistor. In the pixel structure, the first pixel electrode in the prior art is eliminated so as to reduce the processing steps, the production cost and the thickness of the pixel structure; and meanwhile, only a first insulating layer is arranged between the public electrode line and the first drain electrode, the vertical distance between the public electrode line and the first drain electrode is relatively short, so that storage capacitance formed between the public electrode line and the first drain electrode is increased.
Description
Technical field
The present invention relates to a kind of panel display apparatus and manufacture method thereof, particularly a kind of active matrix organic LED pixel structure and manufacture method thereof.
Background technology
Active matrix organic light-emitting diode (Active Matrix Organic Light EmittingDiode, be called for short AMOLED) be a kind of novel flat-panel display device, (LCD) compares with LCD, because Organic Light Emitting Diode (Organic Light Emitting Diode, be called for short OLED) have lighting function, so the visual angle of AMOLED and contrast are better than LCD; Owing to do not need to provide the backlight arrangement of external light source, so AMOLED has advantages such as size is little, in light weight and low in energy consumption; Owing to adopt low DC driven, so AMOLED has the advantage of quick response; Owing to adopt solid material to substitute fluent material among the LCD, so AMOLED externally impacts more stablely down, and can work in the temperature range wideer than LCD; In addition, AMOLED also has advantages such as production cost is low.
At present, the prior art active matrix organic LED pixel structure generally includes grid line, holding wire and power line, holding wire is all vertical with grid line with power line, grid line, holding wire and power line define pixel region together, the position in adjacent signal line and grid line crosspoint forms a first film transistor as addressed elements (also claiming switching thin-film transistor), and the position in contiguous power line and grid line crosspoint forms second thin-film transistor (also claiming drive thin film transistors) of a control Organic Light Emitting Diode.The manufacture method of prior art active matrix organic LED pixel structure is: depositing metal films on substrate forms grid line, gate electrode and public electrode line graph by composition technology; Successive sedimentation first insulating barrier, semiconductor layer and doping semiconductor layer on substrate form the first active layer figure by composition technology on gate electrode; Depositing metal films on substrate forms holding wire (also claiming data wire), the first source electrode, first drain electrode and a TFT channel region figure by composition technology; Deposition second insulating barrier forms the first insulating barrier via hole by composition technology on substrate; Depositing electrically conductive film on substrate forms the first pixel electrode figure by composition technology, and first pixel electrode is connected with first drain electrode by the first insulating barrier via hole; On substrate, deposit one deck the 3rd insulating barrier, semiconductor layer and doping semiconductor layer again, on first pixel electrode, form the second active layer figure by composition technology; Depositing metal films on substrate forms power line, the second source electrode, second drain electrode and the 2nd TFT channel region figure by composition technology; Deposition the 4th insulating barrier forms the second insulating barrier via hole by composition technology on substrate; Depositing electrically conductive film on substrate forms second pixel electrode by composition technology, and second pixel electrode is connected with second drain electrode by the second insulating barrier via hole.
This shows that the manufacturing technology steps of prior art active matrix organic LED pixel structure is more, cause production cost to increase.In addition, exist first insulating barrier and second insulating barrier between first pixel electrode in the existing dot structure and the public electrode wire, vertical range between first pixel electrode and public electrode wire is bigger, therefore makes the storage capacitance that forms between first pixel electrode and public electrode wire less.And actual the use shows that storage capacitance is the very important parameter of active matrix organic LED pixel structure, and display quality is had significant effects.
Summary of the invention
The purpose of this invention is to provide a kind of active matrix organic LED pixel structure and manufacture method thereof, effectively solve technological deficiencies such as the prior art processes step is many, storage capacitance is less.
To achieve these goals, the invention provides a kind of active matrix organic LED pixel structure, comprise the grid line, holding wire and the power line that are formed on the substrate and define pixel region, be formed with the first film transistor, second thin-film transistor, pixel electrode and public electrode wire in the described pixel region respectively, transistorized first drain electrode of described the first film is as the gate electrode of second thin-film transistor.
To achieve these goals, the present invention also provides a kind of manufacture method of active matrix organic LED pixel structure, comprising:
The invention provides a kind of active matrix organic LED pixel structure and manufacture method thereof, with the gate electrode of transistorized first drain electrode of the first film as second thin-film transistor.Because the present invention has cancelled first pixel electrode of prior art, has not only reduced processing step, has reduced production cost, and has reduced the thickness of dot structure.Simultaneously, owing to only have first insulating barrier between the public electrode wire of the present invention and first drain electrode, the vertical range between the public electrode wire and first drain electrode is less, has therefore increased the storage capacitance that forms between the public electrode wire and first drain electrode.Further,, also increased the storage capacitance that forms between itself and pixel electrode, promoted picture quality because the present invention adopts first drain electrode to replace first pixel electrode of prior art.
Description of drawings
Fig. 1 is the plane graph of active matrix organic LED pixel structure of the present invention;
Fig. 2 be among Fig. 1 A1-A1 to profile;
Fig. 3 be among Fig. 1 B1-B1 to profile;
Fig. 4 be among Fig. 1 C1-C1 to profile;
Fig. 5 is the plane graph after the active matrix organic LED pixel structure composition technology first time of the present invention;
Fig. 6 be among Fig. 5 A2-A2 to profile;
Fig. 7 be among Fig. 5 C2-C2 to profile;
Fig. 8 is the plane graph after the active matrix organic LED pixel structure composition technology second time of the present invention;
Fig. 9 be among Fig. 8 A3-A3 to profile;
Figure 10 be among Fig. 8 B3-B3 to profile;
Figure 11 be among Fig. 8 C3-C3 to profile;
Figure 12 is active matrix organic LED pixel structure of the present invention plane graph after the composition technology for the third time;
Figure 13 be among Figure 12 A4-A4 to profile;
Figure 14 be among Figure 12 B4-B4 to profile;
Figure 15 be among Figure 12 C4-C4 to profile;
Figure 16 is the plane graph after the 4th composition technology of active matrix organic LED pixel structure of the present invention;
Figure 17 be among Figure 16 A5-A5 to profile;
Figure 18 be among Figure 16 B5-B5 to profile;
Figure 19 be among Figure 16 C5-C5 to profile;
Figure 20 is the plane graph after the 5th composition technology of active matrix organic LED pixel structure of the present invention;
Figure 21 be among Figure 20 A6-A6 to profile;
Figure 22 be among Figure 20 B6-B6 to profile;
Figure 23 be among Figure 20 C6-C6 to profile;
Figure 24 is the plane graph after the 6th composition technology of active matrix organic LED pixel structure of the present invention;
Figure 25 be among Figure 24 A7-A7 to profile;
Figure 26 be among Figure 24 B7-B7 to profile;
Figure 27 be among Figure 24 C7-C7 to profile;
Figure 28 adopts structural representation after halftoning or the gray mask plate composition technology for active matrix organic LED pixel structure of the present invention;
Figure 29 is the flow chart of the manufacture method of active matrix organic LED pixel structure of the present invention;
Figure 30 is the flow chart of manufacture method first embodiment of active matrix organic LED pixel structure of the present invention;
Figure 31 is the flow chart of manufacture method second embodiment of active matrix organic LED pixel structure of the present invention.
Description of reference numerals:
The 1-substrate; The 2-grid line; The 3-public electrode wire;
The 4-holding wire; The 5-power line; The 6-pixel electrode;
The 11-gate electrode; 12-first insulating barrier; 13-first semiconductor layer;
14-first doping semiconductor layer; The 15-first source electrode; 16-first drain electrode;
17-second insulating barrier; 18-second semiconductor layer; 19-second doping semiconductor layer;
The 20-second source electrode; 21-second drain electrode; 22-the 3rd insulating barrier;
23-insulating barrier via hole.
Embodiment
Below by drawings and Examples, technical scheme of the present invention is described in further detail.
Fig. 1 is the plane graph of active matrix organic LED pixel structure of the present invention, Fig. 2 be among Fig. 1 A1-A1 to profile, Fig. 3 be among Fig. 1 B1-B1 to profile, Fig. 4 be among Fig. 1 C1-C1 to profile.As Fig. 1～shown in Figure 4, active matrix organic LED pixel structure of the present invention comprises grid line 2, public electrode wire 3, holding wire 4 and power line 5, holding wire 4 is vertical with grid line 2 with power line 5, and define pixel region with two adjacent grid lines 2, be formed with the first film transistor (also claiming switching thin-film transistor) in the pixel region respectively as addressed elements, be used to control second thin-film transistor (also claiming drive thin film transistors) and the pixel electrode 6 of Organic Light Emitting Diode, the first film transistor is positioned at the position in grid line 2 and holding wire 4 crosspoints, second thin-film transistor is positioned at the position in grid line 2 and power line 5 crosspoints, and transistorized first drain electrode of the first film is as the gate electrode of second thin-film transistor.Particularly, the first film transistor comprises gate electrode 11, first active layer (first semiconductor layer 13 and first doping semiconductor layer 14), the first source electrode 15, first drain electrode 16 and a TFT channel region, gate electrode 11 is formed on the substrate 1 and with grid line 2 and is connected, first active layer is positioned at gate electrode 11 tops, the first source electrode 15 is connected with holding wire 4, first drain electrode 16 is formed in the pixel region, and as the gate electrode of second thin-film transistor, the area of its area and pixel electrode is suitable.Second thin-film transistor comprises first drain electrode 16, second active layer (second semiconductor layer 18 and second doping semiconductor layer 19), the second source electrode 20, second drain electrode 21 and the 2nd TFT channel region, first drain electrode 16 is as the gate electrode of second thin-film transistor, second active layer is positioned at first drain electrode, 16 tops, the second source electrode 20 is connected with power line 5, and second drain electrode 21 is connected with pixel electrode 6 by the insulating barrier via hole of offering on the 3rd insulating barrier 22 23.
In the technique scheme, grid line 2, gate electrode 11 and public electrode wire 3 are arranged on the substrate and in a composition technology and form simultaneously; First insulating barrier 12 is formed on grid line 2, gate electrode 11 and the public electrode wire 3 and covers whole base plate; First active layer is arranged on gate electrode 11 tops; Holding wire 4, the first source electrode 15 and first drain electrode 16 form in a composition technology simultaneously, one end of the first source electrode 15 is arranged on first active layer, the other end is connected with holding wire 4, one end of first drain electrode 16 is arranged on first active layer, and be formed in the pixel region, form a TFT channel region between the first source electrode 15 and first drain electrode 16; Second insulating barrier 17 is formed on holding wire 4, the first source electrode 15 and first drain electrode 16 and covers whole base plate; Second active layer is arranged on first drain electrode, 16 tops; Power line 5, the second source electrode 20 and second drain electrode 21 form in a composition technology simultaneously, one end of the second source electrode 20 is arranged on second active layer, the other end is connected with power line 5, one end of second drain electrode 21 is arranged on second active layer, forms the 2nd TFT channel region between the second source electrode 20 and second drain electrode 21; The 3rd insulating barrier 22 is formed on power line 5, the second source electrode 20 and second drain electrode 21 and covers whole base plate, offers insulating barrier via hole 23 on it, and insulating barrier via hole 23 is opened in second drain electrode, 21 positions; Pixel electrode 6 is formed on the 3rd insulating barrier 22, is connected with second drain electrode 21 by insulating barrier via hole 23.In technique scheme, first active layer, the first source electrode 15, first drain electrode 16 and a TFT channel region also can be finished with in a composition technology, and second active layer, the second source electrode 20, second drain electrode 21 and the 2nd TFT channel region also can be finished with in a composition technology.
Fig. 5～Figure 27 is the manufacturing schematic diagram of active matrix organic LED pixel structure of the present invention, process for making below by active matrix organic LED pixel structure further specifies technical scheme of the present invention, in the following description, the alleged composition technology of the present invention comprises technologies such as photoresist coating, mask, exposure, etching.
Fig. 5 is active matrix organic LED pixel structure of the present invention plane graph after the composition technology for the first time, Fig. 6 be among Fig. 5 A2-A2 to profile, Fig. 7 be among Fig. 5 C2-C2 to profile.Adopt the method for magnetron sputtering or thermal evaporation, go up deposition one deck first metallic film at substrate 1 (as glass substrate or quartz base plate).The single-layer metal membrane structure that first metallic film can be to use metals such as aluminium, chromium, tungsten, tantalum, titanium, molybdenum or aluminium nickel to constitute, the multiple layer metal membrane structure that also can be to use above-mentioned material to form.Adopt the normal masks plate by the first time composition technology first metallic film is carried out composition, on certain zone of substrate 1, form the figure that comprises gate electrode 11, grid line 2 and public electrode wire 3, wherein gate electrode 11 is connected with grid line 2, public electrode wire 3 is parallel with grid line 2, as Fig. 5～shown in Figure 7.
Fig. 8 is active matrix organic LED pixel structure of the present invention plane graph after the composition technology for the second time, Fig. 9 be among Fig. 8 A3-A3 to profile, Figure 10 be among Fig. 8 B3-B3 to profile, Figure 11 be among Fig. 8 C3-C3 to profile.Finish on the substrate of above-mentioned figure, using plasma strengthens chemical vapour deposition (CVD) (being called for short PECVD) method and deposits first insulating barrier 12, first semiconductor layer 13 and first doping semiconductor layer (ohmic contact layer), 14, the first insulating barriers 12 successively and can adopt materials such as silicon nitride, silicon dioxide or aluminium oxide.Adopt the normal masks plate by the second time composition technology first semiconductor layer 13 and first doping semiconductor layer 14 are carried out composition, form the figure that comprises first active layer, first active layer is positioned at gate electrode 11 tops, as Fig. 8～shown in Figure 11.After this composition technology, first insulating barrier 12 covers whole base plate, and the first active layer figure is etched away fully with first semiconductor layer 13 and first doping semiconductor layer 14 of exterior domain.
Figure 12 is active matrix organic LED pixel structure of the present invention plane graph after the composition technology for the third time, Figure 13 be among Figure 12 A4-A4 to profile, Figure 14 be among Figure 12 B4-B4 to profile, Figure 15 be among Figure 12 C4-C4 to profile.Finish on the substrate of above-mentioned figure, adopting method deposition one deck second metallic film of sputter or thermal evaporation.The single-layer metal membrane structure that second metallic film can be to use metals such as aluminium, chromium, tungsten, tantalum, titanium, molybdenum or aluminium nickel to constitute, the multiple layer metal membrane structure that also can be to use above-mentioned material to form.Adopt the normal masks plate second metallic film to be carried out composition, on substrate 1, form the figure that comprises holding wire 4, the first source electrode 15, first drain electrode 16 and a TFT channel region by composition technology for the third time.Wherein an end of the first source electrode 15 is arranged on first active layer, the other end is connected with holding wire 4, one end of first drain electrode 16 is arranged on first active layer, and cover in two pixel regions between the grid line 2, the doping semiconductor layer 14 in zone is etched away fully between the first source electrode 15 and first drain electrode 16, and etch away part first semiconductor layer 13, form a TFT channel region, as Figure 12～shown in Figure 15.Formed a first film transistor in the position in contiguous grid line 2 and holding wire 4 crosspoints like this as addressed elements, this the first film transistor comprises gate electrode 11, first active layer, the first source electrode 15, first drain electrode 16 and a TFT channel region, forms the first interior drain electrode 16 of pixel region as the transistorized pixel electrode of the first film.
Figure 16 is the plane graph after the 4th composition technology of active matrix organic LED pixel structure of the present invention, Figure 17 be among Figure 16 A5-A5 to profile, Figure 18 be among Figure 16 B5-B5 to profile, Figure 19 be among Figure 16 C5-C5 to profile.On the substrate of finishing the said structure figure, employing PECVD method deposits second insulating barrier, 17, the second semiconductor layers 18 successively and second doping semiconductor layer (ohmic contact layer), 19, the second insulating barriers can adopt materials such as silicon nitride, silica or silicon oxynitride.Adopt the normal masks plate by the 4th composition technology second semiconductor layer 18 and second doping semiconductor layer 19 to be carried out composition, form the figure that comprises second active layer, second active layer is formed on first drain electrode 16, as Figure 16～shown in Figure 19.
Figure 20 is the plane graph after the 5th composition technology of active matrix organic LED pixel structure of the present invention, Figure 21 be among Figure 20 A6-A6 to profile, Figure 22 be among Figure 20 B6-B6 to profile, Figure 23 be among Figure 20 C6-C6 to profile.Finish on the substrate of above-mentioned figure, adopting method deposition one deck the 3rd metallic film of sputter or thermal evaporation.The single-layer metal membrane structure that the 3rd metallic film can be to use metals such as aluminium, chromium, tungsten, tantalum, titanium, molybdenum or aluminium nickel to constitute, the multiple layer metal membrane structure that also can be to use above-mentioned material to form.Adopt the normal masks plate the 3rd metallic film to be carried out composition, on substrate 1, form the figure that comprises power line 5, the second source electrode 20, second drain electrode 21 and the 2nd TFT channel region by the 5th composition technology.Wherein an end of the second source electrode 20 is arranged on second active layer, the other end is connected with power line 5, one end of second drain electrode 21 is arranged on second active layer, second doping semiconductor layer 19 in zone is etched away fully between the second source electrode 20 and second drain electrode 21, and etch away part first semiconductor layer 18, form the 2nd TFT channel region, as Figure 20～shown in Figure 23.Like this, formed second thin-film transistor of a control Organic Light Emitting Diode in the contiguous grid line 2 and the position in power line 5 crosspoints, this second thin-film transistor comprises first drain electrode 16, second active layer, the second source electrode 20, second drain electrode 21 and the 2nd TFT channel region, and first drain electrode 16 is as the gate electrode of second thin-film transistor.
Figure 24 is the plane graph after the 6th composition technology of active matrix organic LED pixel structure of the present invention, Figure 25 be among Figure 24 A7-A7 to profile, Figure 26 be among Figure 24 B7-B7 to profile, Figure 27 be among Figure 24 C7-C7 to profile.On the substrate of finishing the said structure figure, adopt the PECVD method to deposit the 3rd insulating barrier 22, the three insulating barriers and can adopt materials such as silicon nitride, silica or silicon oxynitride.Adopt the normal masks plate the 3rd insulating barrier 22 to be carried out composition by the 6th composition technology, formation comprises the figure of insulating barrier via hole 23, insulating barrier via hole 23 is opened in second drain electrode, 21 positions, etch away the 3rd insulating barrier 22 upper surface of second drain electrode 21 is come out, as Figure 24～shown in Figure 27.Can also form grid line interface zone (grid line PAD) figure and data line interface zone (data wire PAD) figure in this process simultaneously, its technology and structure have been widely used in the present composition technology.
At last, on the substrate of finishing the said structure figure, adopt the method deposition layer of conductive film of sputter or thermal evaporation, conductive film can adopt the materials such as tin indium oxide, indium zinc oxide or aluminum zinc oxide of transparent material, also can adopt other electric conducting material.Adopt the normal masks plate by the 7th composition technology conductive film to be carried out composition, form the figure that comprises pixel electrode 6, pixel electrode 6 is connected with second drain electrode 21 by insulating barrier via hole 23, as Fig. 1～shown in Figure 4.
Promptly finished the making of the first film transistor and second thin-film transistor in the active matrix organic LED pixel structure of the present invention by said process, the first film transistor that is used for addressed elements is positioned at the position in grid line 2 and holding wire 4 crosspoints, comprise gate electrode 11, first active layer, the first source electrode 15, first drain electrode 16 and a TFT channel region, gate electrode 11 is formed on the substrate 1 and with grid line 2 and is connected, first active layer is positioned at gate electrode 11 tops, the first source electrode 15 is connected with holding wire 4, be formed on first drain electrode 16 in the pixel region as the transistorized pixel electrode of the first film, and as the gate electrode of second thin-film transistor.Second thin-film transistor that is used to control Organic Light Emitting Diode is positioned at the position in grid line 2 and power line 5 crosspoints, comprise first drain electrode 16, second active layer, the second source electrode 20, second drain electrode 21 and the 2nd TFT channel region, first drain electrode 16 is as the gate electrode of second thin-film transistor, second active layer is positioned at first drain electrode, 16 tops, the second source electrode 20 is connected with power line 5, second drain electrode 21 is connected with pixel electrode 6 by insulating barrier via hole 23, makes second thin-film transistor control Organic Light Emitting Diode operate as normal.
More than explanation only is to adopt the normal masks plate to prepare a kind of implementation method of active matrix organic LED pixel structure of the present invention, can also or reduce composition technology number of times by increase in actual the use, select different material or combinations of materials to realize the present invention.For example, aforementioned second time composition technology and for the third time composition technology can be merged into a composition technology that adopts halftoning or gray mask plate.Figure 28 adopts structural representation after halftoning or the gray mask plate composition technology for active matrix organic LED pixel structure of the present invention, for A4-A4 among Figure 12 to profile, give simple declaration below, photoresist is example with the positive photoresist.On the substrate of finishing the composition technology first time, deposit first insulating barrier 12 successively, first semiconductor layer 13, first doping semiconductor layer 14 and second metallic film, apply one deck photoresist then, adopt the exposure of halftoning or gray mask plate, make photoresist form complete exposure area (photoresist is removed the zone fully), partial exposure area (photoresist is partly removed the zone) and unexposed area (the complete reserve area of photoresist), wherein unexposed area is corresponding to holding wire, the first source electrode and the first drain electrode figure region, partial exposure area is corresponding to a TFT channel region figure region, and complete exposure area is corresponding to the zone beyond the above-mentioned figure.After the development treatment, the thickness of unexposed area photoresist does not change, the thickness attenuation of partial exposure area photoresist, and the photoresist of complete exposure area is removed fully.At first complete exposure area is carried out the etching first time, etch away second metallic film, the first doped semiconductor layer and first semiconductor layer respectively, form holding wire, first active layer, the first source electrode 15 and first drain electrode, 16 figures.Carry out ashing treatment, remove the photoresist of partial exposure area fully, partial exposure area is carried out the etching second time, etch away second metallic film, the first doped semiconductor layer and part first semiconductor layer respectively, make this zone expose semiconductor layer, form a TFT channel region figure.After this composition technology, first insulating barrier covers whole base plate, the first active layer figure is etched away fully with first semiconductor layer and first doping semiconductor layer of exterior domain, but remain with first semiconductor layer 13 and first doping semiconductor layer 14 under holding wire, the first source electrode 15 and first drain electrode, 16 figures, as shown in figure 28.In adopting halftoning or the transistorized technical scheme of gray mask plate composition prepared the first film, because first drain electrode, 16 belows remain with first semiconductor layer 13 and first doping semiconductor layer 14, so have first insulating barrier, first semiconductor layer and first doping semiconductor layer between the public electrode wire and first drain electrode.But owing to have insulating barrier and passivation layer between the public electrode wire of prior art formation storage capacitance and the pixel electrode, and the thickness of passivation layer greater than the thickness of first semiconductor layer and first doping semiconductor layer and, therefore compare with the structure of prior art storage capacitance, the present invention adopts halftoning or the transistorized technical scheme of gray mask plate composition prepared the first film to have vertical range features of smaller between the public electrode wire and first drain electrode equally, can realize increasing the effect of storage capacitance between the public electrode wire and first drain electrode equally.
And for example, aforementioned the 4th composition technology and the 5th composition technology can be merged into a composition technology that adopts halftoning or gray mask plate.Give simple declaration below, photoresist is example with the positive photoresist.Deposit second insulating barrier successively finishing on the substrate of composition technology for the third time, second semiconductor layer, second doping semiconductor layer and the 3rd metallic film, apply one deck photoresist then, adopt the exposure of halftoning or gray mask plate, make photoresist form complete exposure area (photoresist is removed the zone fully), partial exposure area (photoresist is partly removed the zone) and unexposed area (the complete reserve area of photoresist), wherein unexposed area is corresponding to power line, the second source electrode and the second drain electrode figure region, partial exposure area is corresponding to the 2nd TFT channel region figure region, and complete exposure area is corresponding to the zone beyond the above-mentioned figure.After the development treatment, the thickness of unexposed area photoresist does not change, the thickness attenuation of partial exposure area photoresist, and the photoresist of complete exposure area is removed fully.At first complete exposure area is carried out the etching first time, etch away the 3rd metallic film, the second doped semiconductor layer and second semiconductor layer respectively, form power line, second active layer, second drain electrode and the second source electrode pattern.Carry out ashing treatment, remove the photoresist of partial exposure area fully, partial exposure area is carried out the etching second time, etch away the 3rd metallic film, the second doped semiconductor layer and part second semiconductor layer respectively, make this zone expose semiconductor layer, form the 2nd TFT channel region figure.After this composition technology, second insulating barrier covers whole base plate, the second active layer figure is etched away fully with second semiconductor layer and second doping semiconductor layer of exterior domain, but remains with second semiconductor layer and second doping semiconductor layer under power line, the second source electrode and the second drain electrode figure.This process has been widely used in LCD and has made the field, repeats no more here.
When active matrix organic LED pixel structure of the present invention is worked, holding wire provides data voltage, therefore the data voltage that provides for holding wire of the voltage on first drain electrode, the storage capacitance that forms between first drain electrode and the public electrode wire can keep this data voltage, and first drain electrode serves as the gate electrode of second thin-film transistor.When second thin-film transistor was worked, the second source electrode offered pixel electrode with the electric current on the power line by second drain electrode.The first film transistor is used for driving voltage is carried out addressing, and second thin-film transistor is used to control Organic Light Emitting Diode.
The invention provides a kind of active matrix organic LED pixel structure, adopt the gate electrode of transistorized first drain electrode of the first film as second thin-film transistor.Because the present invention has cancelled first pixel electrode of prior art, has not only reduced processing step, has reduced production cost, and has reduced the thickness of dot structure.Simultaneously, owing to only have first insulating barrier between the public electrode wire of the present invention and first drain electrode, the vertical range between the public electrode wire and first drain electrode is less, has therefore increased the storage capacitance that forms between the public electrode wire and first drain electrode.Further,, also increased the storage capacitance that forms between itself and pixel electrode, promoted picture quality because the present invention adopts first drain electrode to replace first pixel electrode of prior art.
Figure 29 is the flow chart of the manufacture method of active matrix organic LED pixel structure of the present invention, specifically comprises:
The invention provides a kind of manufacture method of active matrix organic LED pixel structure, adopt the gate electrode of transistorized first drain electrode of the first film as second thin-film transistor.Because the present invention has cancelled first pixel electrode of prior art, has not only reduced processing step, has reduced production cost, and has reduced the thickness of dot structure.Simultaneously, owing to only have first insulating barrier between the public electrode wire of the present invention and first drain electrode, the vertical range between the public electrode wire and first drain electrode is less, has therefore increased the storage capacitance that forms between the public electrode wire and first drain electrode.Further,, also increased the storage capacitance that forms between itself and pixel electrode, promoted picture quality because the present invention adopts first drain electrode to replace first pixel electrode of prior art.
Figure 30 is the flow chart of manufacture method first embodiment of active matrix organic LED pixel structure of the present invention, specifically comprises:
Particularly, at first go up deposition one deck first metallic film at substrate (as glass substrate or quartz base plate).The single-layer metal membrane structure that first metallic film can be to use metals such as aluminium, chromium, tungsten, tantalum, titanium, molybdenum or aluminium nickel to constitute, the multiple layer metal membrane structure that also can be to use above-mentioned material to form.Adopt the normal masks plate by composition technology first metallic film to be carried out composition, form the figure that comprises gate electrode, grid line and public electrode wire on certain zone of substrate, wherein gate electrode is connected with grid line, and public electrode wire is parallel with grid line.
Finish on the substrate of above-mentioned figure, adopt the PECVD method to deposit first insulating barrier, first semiconductor layer and first doping semiconductor layer (ohmic contact layer) successively, first insulating barrier can adopt materials such as silicon nitride, silicon dioxide or aluminium oxide.Adopt the normal masks plate by composition technology first semiconductor layer and first doping semiconductor layer to be carried out composition, form the figure that comprises first active layer, first active layer is positioned at the gate electrode top.After this composition technology, first insulating barrier covers whole base plate, and the first active layer figure is etched away fully with first semiconductor layer and first doping semiconductor layer of exterior domain.
Finish on the substrate of above-mentioned figure, adopting method deposition one deck second metallic film of sputter or thermal evaporation.The single-layer metal membrane structure that second metallic film can be to use metals such as aluminium, chromium, tungsten, tantalum, titanium, molybdenum or aluminium nickel to constitute, the multiple layer metal membrane structure that also can be to use above-mentioned material to form.Adopt the normal masks plate second metallic film to be carried out composition, on substrate, form the figure that comprises holding wire, the first source electrode, first drain electrode and a TFT channel region by composition technology.Wherein an end of the first source electrode is arranged on first active layer, the other end is connected with holding wire, one end of first drain electrode is arranged on first active layer, and cover in two pixel regions between the grid line, the doping semiconductor layer in zone is etched away fully between the first source electrode and first drain electrode, and etch away the part semiconductor layer, form a TFT channel region.Like this, position in contiguous grid line and holding wire crosspoint has formed a first film transistor as addressed elements, this the first film transistor comprises gate electrode, first active layer, the first source electrode, first drain electrode and a TFT channel region, first drain electrode is formed in the whole pixel region, simultaneously as the transistorized pixel electrode of the first film.
On the substrate of finishing the said structure figure, adopt the PECVD method to deposit second insulating barrier successively, second semiconductor layer and second doping semiconductor layer (ohmic contact layer), second insulating barrier can adopt materials such as silicon nitride, silica or silicon oxynitride.Adopt the normal masks plate by composition technology second semiconductor layer and second doping semiconductor layer to be carried out composition, form the figure that comprises second active layer, second active layer is formed on first drain electrode.
Finish on the substrate of above-mentioned figure, adopting method deposition one deck the 3rd metallic film of sputter or thermal evaporation.The single-layer metal membrane structure that the 3rd metallic film can be to use metals such as aluminium, chromium, tungsten, tantalum, titanium, molybdenum or aluminium nickel to constitute, the multiple layer metal membrane structure that also can be to use above-mentioned material to form.Adopt the normal masks plate the 3rd metallic film to be carried out composition, on substrate, form the figure that comprises power line, the second source electrode, second drain electrode and the 2nd TFT channel region by composition technology.Wherein an end of the second source electrode is arranged on second active layer, the other end is connected with power line, one end of second drain electrode is arranged on second active layer, second doping semiconductor layer in zone is etched away fully between the second source electrode and second drain electrode, and etch away part first semiconductor layer, form the 2nd TFT channel region.Like this, formed second thin-film transistor of a control Organic Light Emitting Diode in the position in contiguous grid line and power line crosspoint, this second thin-film transistor comprises first drain electrode, second active layer, the second source electrode, second drain electrode and the 2nd TFT channel region, and first drain electrode is as the gate electrode of second thin-film transistor.
On the substrate of finishing the said structure figure, adopt the PECVD method to deposit the 3rd insulating barrier 22, the three insulating barriers and can adopt materials such as silicon nitride, silica or silicon oxynitride.Adopt the normal masks plate by composition technology the 3rd insulating barrier to be carried out composition, form the figure that comprises the insulating barrier via hole, the insulating barrier via hole is opened in the second drain electrode position, etches away the 3rd insulating barrier the upper surface of second drain electrode is come out.Can also form grid line interface zone (grid line PAD) figure and data line interface zone (data wire PAD) figure in this process simultaneously.
At last, on the substrate of finishing the said structure figure, adopt the method deposition layer of conductive film of sputter or thermal evaporation, conductive film can adopt the materials such as tin indium oxide, indium zinc oxide or aluminum zinc oxide of transparent material, also can adopt other electric conducting material.Adopt the normal masks plate by composition technology conductive film to be carried out composition, formation comprises pattern of pixel electrodes, and pixel electrode is connected with second drain electrode by the insulating barrier via hole.
Figure 31 is the flow chart of manufacture method second embodiment of active matrix organic LED pixel structure of the present invention, specifically comprises:
In the present embodiment, step 11 among the preparation flow of step 21, step 24 and step 25 and aforementioned first embodiment, step 16 are identical with step 17, different is, the step 22 of present embodiment is the composition technology that the composition technology of step 12 and step 13 among first embodiment is merged into an employing halftoning or gray mask plate, and step 23 is the composition technology that the composition technology of step 14 and step 15 among first embodiment is merged into an employing halftoning or gray mask plate.Adopt the composition technology of halftoning or gray mask plate to describe in detail in front, and be widely used in LCD manufacturing field, repeat no more here.
It should be noted that at last: above embodiment is only unrestricted in order to technical scheme of the present invention to be described, although the present invention is had been described in detail with reference to preferred embodiment, those of ordinary skill in the art is to be understood that, can make amendment or be equal to replacement technical scheme of the present invention, and not break away from the spirit and scope of technical solution of the present invention.
Claims (11)
1. active matrix organic LED pixel structure, comprise the grid line, holding wire and the power line that are formed on the substrate and define pixel region, be formed with the first film transistor, second thin-film transistor, pixel electrode and public electrode wire in the described pixel region respectively, it is characterized in that transistorized first drain electrode of described the first film is as the gate electrode of second thin-film transistor.
2. active matrix organic LED pixel structure according to claim 1, it is characterized in that, described the first film transistor comprise be formed on the substrate and be connected with described grid line to gate electrode, be formed on the described gate electrode and cover whole base plate first insulating barrier, be formed on described first insulating barrier and first active layer above described gate electrode, the first source electrode that is connected with described holding wire, be formed on a TFT channel region that forms between first drain electrode in the pixel region and the first source electrode and first drain electrode.
3. active matrix organic LED pixel structure according to claim 2, it is characterized in that, the described first source electrode, first drain electrode and a TFT channel region are finished with in a composition technology, or described first active layer, the first source electrode, first drain electrode and a TFT channel region are finished with in a composition technology.
4. active matrix organic LED pixel structure according to claim 1, it is characterized in that, be formed with second insulating barrier on described first drain electrode, be formed with second active layer that is positioned at described first drain electrode top on described second insulating barrier, be formed with the second source electrode that is connected with described power line on described second active layer, the 2nd TFT channel region that forms between second drain electrode that is connected with described pixel electrode and the second source electrode and second drain electrode, be formed with the 3rd insulating barrier on the described second source electrode and second drain electrode, offer the insulating barrier via hole that described pixel electrode is connected with second drain electrode by the insulating barrier via hole on described the 3rd insulating barrier.
5. active matrix organic LED pixel structure according to claim 4, it is characterized in that, the described second source electrode, second drain electrode and the 2nd TFT channel region are finished with in a composition technology, or described second active layer, the second source electrode, second drain electrode and the 2nd TFT channel region are finished with in a composition technology.
6. according to the described active matrix organic LED pixel structure of arbitrary claim in the claim 1～5, it is characterized in that described public electrode wire and described grid line are provided with layer.
7. the manufacture method of an active matrix organic LED pixel structure is characterized in that, comprising:
Step 1, on substrate deposition first metallic film, form the figure comprise gate electrode, grid line and public electrode wire by composition technology;
Step 2, the film that the deposition composition is used on the substrate of completing steps 1 form holding wire, first active layer, the first source electrode, first drain electrode and a TFT channel region figure by composition technology, and wherein first drain electrode is formed in the pixel region;
Step 3, the film that the deposition composition is used on the substrate of completing steps 2 form power line, second active layer, the second source electrode, second drain electrode and the 2nd TFT channel region figure by composition technology;
Step 4, on the substrate of completing steps 3 deposition the 3rd insulating barrier, form the figure comprise the insulating barrier via hole by composition technology, the insulating barrier via hole is opened in the second drain electrode position;
Step 5, on the substrate of completing steps 4 the depositing electrically conductive film, forms by composition technology and to comprise pattern of pixel electrodes, and pixel electrode is connected with second drain electrode by the insulating barrier via hole.
8. the manufacture method of active matrix organic LED pixel structure according to claim 7 is characterized in that, described step 2 specifically comprises:
Step 211, on the substrate of completing steps 1, deposit first insulating barrier, first semiconductor layer and first doping semiconductor layer successively;
Step 212, employing normal masks plate form the figure that comprises first active layer by composition technology, and wherein first active layer is positioned at the gate electrode top;
Step 213, on the substrate of completing steps 212 deposition second metallic film;
Step 214, employing normal masks plate form the figure that comprises holding wire, the first source electrode, first drain electrode and a TFT channel region by composition technology, wherein an end of the first source electrode is arranged on first active layer, the other end is connected with holding wire, one end of first drain electrode is arranged on first active layer, and be formed in the pixel region, form a TFT channel region between the first source electrode and first drain electrode.
9. the manufacture method of active matrix organic LED pixel structure according to claim 7 is characterized in that, described step 2 specifically comprises:
Step 221, on the substrate of completing steps 1, deposit first insulating barrier, first semiconductor layer, first doping semiconductor layer and second metallic film successively;
Step 222, employing halftoning or gray mask plate form the figure that comprises holding wire, first active layer, the first source electrode, first drain electrode and a TFT channel region by composition technology, wherein first active layer is positioned at the gate electrode top, one end of the first source electrode is arranged on first active layer, the other end is connected with holding wire, one end of first drain electrode is arranged on first active layer, and be formed in the pixel region, form a TFT channel region between the first source electrode and first drain electrode.
10. the manufacture method of active matrix organic LED pixel structure according to claim 7 is characterized in that, described step 3 specifically comprises:
Step 311, on the substrate of completing steps 2, deposit second insulating barrier, second semiconductor layer and second doping semiconductor layer successively;
Step 312, employing normal masks plate form the figure that comprises second active layer by composition technology, and wherein second active layer is positioned at first drain electrode top;
Step 313, on the substrate of completing steps 312 deposition the 3rd metallic film;
Step 314, employing normal masks plate form the figure that comprises power line, the second source electrode, second drain electrode and the 2nd TFT channel region by composition technology, wherein an end of the second source electrode is arranged on second active layer, the other end is connected with holding wire, one end of second drain electrode is arranged on second active layer, forms the 2nd TFT channel region between the second source electrode and second drain electrode.
11. the manufacture method of active matrix organic LED pixel structure according to claim 7 is characterized in that, described step 3 specifically comprises:
Step 321, on the substrate of completing steps 2, deposit second insulating barrier, second semiconductor layer, second doping semiconductor layer and the 3rd metallic film successively;
Step 322, employing halftoning or gray mask plate form the figure that comprises power line, second active layer, the second source electrode, second drain electrode and the 2nd TFT channel region by composition technology, wherein second active layer is positioned at first drain electrode top, one end of the second source electrode is arranged on second active layer, the other end is connected with power line, one end of second drain electrode is arranged on second active layer, forms the 2nd TFT channel region between the second source electrode and second drain electrode.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013026395A1 (en) * | 2011-08-23 | 2013-02-28 | 京东方科技集团股份有限公司 | Array substrate and manufacturing method thereof |
| CN108896717A (en) * | 2018-07-24 | 2018-11-27 | 京东方科技集团股份有限公司 | A kind of chemical sensitisation unit and chemical sensor, chemical sensing devices |
| CN112768405A (en) * | 2021-01-15 | 2021-05-07 | 信利（惠州）智能显示有限公司 | Thin film transistor array substrate and manufacturing method thereof |
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2008
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013026395A1 (en) * | 2011-08-23 | 2013-02-28 | 京东方科技集团股份有限公司 | Array substrate and manufacturing method thereof |
| US9070772B2 (en) | 2011-08-23 | 2015-06-30 | Boe Technology Group Co., Ltd. | Array substrate and manufacturing method thereof |
| CN108896717A (en) * | 2018-07-24 | 2018-11-27 | 京东方科技集团股份有限公司 | A kind of chemical sensitisation unit and chemical sensor, chemical sensing devices |
| US10976281B2 (en) | 2018-07-24 | 2021-04-13 | Hefei Xinsheng Optoelectronics Technology Co., Ltd. | Chemical sensing unit, chemical sensor, and chemical sensing device electrically coupled to light emitting diode |
| CN112768405A (en) * | 2021-01-15 | 2021-05-07 | 信利（惠州）智能显示有限公司 | Thin film transistor array substrate and manufacturing method thereof |
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