CN101740299B - Cathode insulating block for realizing three-face positioning of filament clip - Google Patents
Cathode insulating block for realizing three-face positioning of filament clip Download PDFInfo
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- CN101740299B CN101740299B CN2008100439117A CN200810043911A CN101740299B CN 101740299 B CN101740299 B CN 101740299B CN 2008100439117 A CN2008100439117 A CN 2008100439117A CN 200810043911 A CN200810043911 A CN 200810043911A CN 101740299 B CN101740299 B CN 101740299B
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Abstract
The invention discloses a cathode insulating block for realizing the three-face positioning of a filament clip. The cathode insulating block is provided with four positioning ribs, wherein two positioning ribs are positioned in the middle of the cathode insulating block, and the other two positioning ribs are respectively positioned on the left and right sides of the cathode insulating block. In the invention, a positioning rib is respectively added to the two sides, of the cathode insulating block, for arranging the filament clip so as to ensure that the filament clip has three positioning surfaces and that the filament clip can be positioned on the cathode insulating block firmly without filament displacement caused by bad positioning during arrangement, a friction force when a retaining screw rotates or the collision of an external force; and the short circuit of a filament and a cathode can be avoided.
Description
Technical field
The present invention relates to the relevant parts of a kind of semiconductor production equipment, relate in particular to a kind of cathode insulating block of realizing three location of filament folder.
Background technology
Ion implantor is because the doping of semi-conducting material needs and comes out the sixties in last century.Though some different types are arranged, and they generally all are made up of following major part: (1) ion source, be used to produce and draw the ion beam of certain element, this is the source of ion implantor; (2) accelerator, the ion beam that ion source is drawn quickens, and makes it reach required energy; (3) quality analysis of ion beam (selection of ionic species); (4) constraint of ion beam and control; (5) target chamber; (6) vacuum system.
The cathode assembly of GSD ion implantor ELS type ion source head as depicted in figs. 1 and 2, form by filament 3, filament folder 4, negative electrode 1, negative electrode mounting panel 2, cathode insulating block 7 and some fixed screws 5, wherein cathode insulating block and plays the location and the effect of each parts that insulate not only with each unit construction together.There is deficiency in design in existing cathode insulating block, two location ribs 6 above the cathode insulating block 7 are in the centre position of cathode insulating block 7 (see figure 4), only 2 locating surfaces 8 to filament folder 4 play the role of positioning, these 2 locating surfaces 8 are (to see Fig. 2 by what location rib 6 that is positioned at the centre position and filament folder 4 formed, when the location is good, filament 3 is positioned at the center of negative electrode 1), this structure is easy to cause filament to be clipped in when installing or the back is installed and is shifted because of collision.For example, when installing and fixing screw 5, under the effect of spin friction power, if finger does not firmly withstand filament folder 4, filament folder 4 is easy to be shifted, and causes the too close short circuit (see figure 3) easily of a certain side lamp silk 3 and negative electrode 1.And for example, in transportation, if the filament double-layered quilt collides, the filament folder also is easy to take place similar displacement.After filament folder displacement, the filament and the gap between the negative electrode that are installed in above the filament folder will diminish, the expansion of after filament energising work, will generating heat, and filament is easy to contact with negative electrode and causes short circuit like this.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of cathode insulating block of realizing three location of filament folder, locatees on cathode insulating block than difficult when having overcome the installation of filament folder, and the displacement of filament folder takes place easily, causes the defective of filament and negative electrode short circuit.
For solving the problems of the technologies described above, the invention provides a kind of cathode insulating block of realizing three location of filament folder, this cathode insulating block is provided with four location ribs, wherein two positioning rib position of bone are in the centre position of cathode insulating block, and two other location rib lays respectively at the left and right sides of cathode insulating block.
Describedly form two grooves at the location in centre position rib and between the rib of the location of the left and right sides, this groove is used for and the filament folder cooperates the location.
Described filament clamps into described groove, and adopts the fixed screw stationary positioned.
Described filament anchor clamps have three locating surfaces, and wherein two locating surfaces are to be formed by location rib that is positioned at the centre position and filament folder, and another locating surface is to be formed by location rib that is positioned at position, the left and right sides and filament folder.
Compare with prior art, the present invention has following beneficial effect: the present invention installs the both sides of the position of filament folder at cathode insulating block, each increases a location rib, guarantee that filament accompanies 3 locating surfaces, can be positioned at firmly on the cathode insulating block, can be when not installing the bad or frictional force or because of the collision of external force causes the displacement of filament folder when rotating in location because of fixed screw, thoroughly stop the filament and the negative electrode short circuit that cause because of the displacement of filament folder, reduction breakdown rate.
Description of drawings
Fig. 1 is the cathode assembly perspective exploded view of existing GSD ion implantor ELS type ion source head;
Fig. 2 is the schematic diagram of cathode assembly under the good situations of location of existing GSD ion implantor ELS type ion source head;
Fig. 3 is the schematic diagram of cathode assembly under the unfavorable condition of location of existing GSD ion implantor ELS type ion source head;
Fig. 4 is the structural representation of existing cathode insulating block;
Fig. 5 is the structural representation that the present invention realizes the cathode insulating block of three location of filament folder;
Fig. 6 is the location schematic diagram that the present invention realizes the cathode insulating block of three location of filament folder.
Embodiment
The present invention is further detailed explanation below in conjunction with drawings and Examples.
The present invention will have two positioning modes of cathode insulating block now, make three positioning modes into, promptly at a location of each side increase of cathode insulating block rib 9, add 2 the location ribs 6 of script in the cathode insulating block centre position, this cathode insulating block one has four location ribs, form two grooves 11 at the location in centre position rib 6 and between the location of left and right sides rib 9, this groove 11 is used for cooperating the location (see figure 5) with the filament folder.
As shown in Figure 6, cathode insulating block is when installing the filament folder, two grooves 11 that form between rib 6 and the location rib 9 (are promptly located in the centre position that makes filament folder 4 be embedded in location rib 6 and location rib 9, see Fig. 5), and make filament folder 4 hang down into the end naturally, fixing with fixed screw 5 then, (2 locating surfaces wherein are to be formed by location rib 6 that is positioned at the centre position and filament folder 4 to guarantee 3 locating surfaces 10 are arranged filament folder 4, another locating surface is to be formed by location rib 9 that is positioned at position, the left and right sides and filament folder 4), can be positioned on the cathode insulating block firmly, thereby guaranteeing that filament folder 4 can not collide because of the spin friction power of fixed screw or by external force is shifted.
Claims (3)
1. realize that filament presss from both sides the cathode insulating block of three location for one kind, the centre position of this cathode insulating block is provided with two location ribs, it is characterized in that, the left and right sides of this cathode insulating block also is provided with two location ribs; Describedly form two grooves at the location in centre position rib and between the rib of the location of the left and right sides, this groove is used for and the filament folder cooperates the location.
2. the cathode insulating block of three location of realization filament folder according to claim 1 is characterized in that described filament clamps into described groove, and adopts the fixed screw stationary positioned.
3. the cathode insulating block of three location of realization filament folder according to claim 1, it is characterized in that, described filament anchor clamps have three locating surfaces, wherein two locating surfaces are to be formed by location rib that is positioned at the centre position and filament folder, and another locating surface is to be formed by location rib that is positioned at position, the left and right sides and filament folder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100439117A CN101740299B (en) | 2008-11-06 | 2008-11-06 | Cathode insulating block for realizing three-face positioning of filament clip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100439117A CN101740299B (en) | 2008-11-06 | 2008-11-06 | Cathode insulating block for realizing three-face positioning of filament clip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101740299A CN101740299A (en) | 2010-06-16 |
| CN101740299B true CN101740299B (en) | 2011-08-24 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008100439117A Active CN101740299B (en) | 2008-11-06 | 2008-11-06 | Cathode insulating block for realizing three-face positioning of filament clip |
Country Status (1)
| Country | Link |
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| CN (1) | CN101740299B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103295789B (en) * | 2013-06-08 | 2016-05-18 | 陈昊 | The preparation method of titanium dioxide bilayer film electrode |
| TWI725384B (en) * | 2019-02-22 | 2021-04-21 | 力晶積成電子製造股份有限公司 | Ion source head structure of semiconductor ion implanter |
| CN110729159B (en) * | 2019-10-12 | 2022-05-31 | 武汉新芯集成电路制造有限公司 | Installation device of ion source |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3943393A (en) * | 1975-02-13 | 1976-03-09 | The Machlett Laboratories, Inc. | Stress free filament structure |
| CN2922115Y (en) * | 2006-04-24 | 2007-07-11 | 北京中科信电子装备有限公司 | Long-life ion source heating electronic gun filament fixing device |
-
2008
- 2008-11-06 CN CN2008100439117A patent/CN101740299B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3943393A (en) * | 1975-02-13 | 1976-03-09 | The Machlett Laboratories, Inc. | Stress free filament structure |
| CN2922115Y (en) * | 2006-04-24 | 2007-07-11 | 北京中科信电子装备有限公司 | Long-life ion source heating electronic gun filament fixing device |
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| Publication number | Publication date |
|---|---|
| CN101740299A (en) | 2010-06-16 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20131216 |
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| C41 | Transfer of patent application or patent right or utility model | ||
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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| TR01 | Transfer of patent right |
Effective date of registration: 20131216 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |