CN101738874A - Method for simulating photoresist development - Google Patents
Method for simulating photoresist development Download PDFInfo
- Publication number
- CN101738874A CN101738874A CN200810043986A CN200810043986A CN101738874A CN 101738874 A CN101738874 A CN 101738874A CN 200810043986 A CN200810043986 A CN 200810043986A CN 200810043986 A CN200810043986 A CN 200810043986A CN 101738874 A CN101738874 A CN 101738874A
- Authority
- CN
- China
- Prior art keywords
- developing
- photoresist
- simulation
- simulating
- development
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention discloses a method for simulating a photoetching technology, which comprises the steps of simulating optical imaging of photoetching images, simulating photoacid diffusion, simulating photoresist baked images and simulating photoresist development, wherein in the step of simulating photoresist development, photoetching exposure energy, the maximal development rate normalization constant, a development threshold energy spread coefficient and MinDR representing the minimal development rate normalization constant are used for characterizing the development rate varying with the exposure energy.
Description
Technical field
The present invention relates to a kind of method of photoresist developing simulation.
Background technology
In the exploitation and abnormal problem solution of optical semiconductor carving technology, it is a kind of shortening process cycle that photoetching process is simulated, and reduces the common method of cost of development.And the simulation of photoetching process is generally comprised the following aspects: the optical imagery simulation of litho pattern, light acid diffusion simulations, photoresist baking graphic modeling and photoresist developing simulation expose in the corresponding respectively photoetching process, several steps such as back baking and development.
Formed the method for the conventional photoetching process simulation of a cover in the prior art, comprised the optical imagery simulation of litho pattern, light acid diffusion simulations, the method for photoresist baking graphic modeling and photoresist developing simulation.The method of wherein existing photoresist developing simulation is for adopting the chris mark equation of multi-parameter fitting.This method comes experimental data is carried out match by a multi-parameter fitting, and the Chris mack equation of this multi-parameter fitting is specially:
DR(Dose)＝MaxDR*(1-exp(-Dose/E0))
n+MinDR
MaxDR wherein, MinDR, E0 are fitting parameter undetermined, and n is the undetermined fitting parameter relevant with photoresist, and E0 and n need satisfy: E0=-Dose*log (1-(DRO/DDR)
(1/n))
Gama＝E0/Dose*n*((DDR/DRO)
(1/n)-1)
Wherein Gama is the undetermined fitting parameter relevant with photoresist, and DDR, DDO are fitting parameter undetermined.
Can see that from above-mentioned the undetermined parameter that needs match the method is MaxDR, MinDR, E0, n, Gama, DDR and DDO, and wherein n is the relevant fitting parameter undetermined of photoresist with Gama, and physical meaning is indeterminate, E0, n, Gama, DDR and DDO need simultaneous equations find the solution and the result not unique, need rule of thumb to make n to different photoresists earlier and Gama could match.Entire method is more loaded down with trivial details, and the fitting parameter that involves is a lot, the algorithm complexity, and match needs the time more, and some meaning of parameters is not clear, is difficult to understand; N and Gama's determines that being based on mass data concludes the empirical constant of summing up, and determines that for some new materials suitable difficulty is arranged simultaneously.
So existing photoresist approximating method carries out parameter fitting by mathematical model, each parameter does not have clear and definite physical meaning in the model, be difficult to understand, and still be that photoetching process is simulated no matter for photoresist manufacturer, its explanation can not be satisfactory.Simultaneously as a kind of rudimentary algorithm of business software, this method has been applied patent, in the application and development of reality, limited by patent protection, very difficultly freely develops use.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of method of photoresist developing simulation, wherein uses simple relatively photoresist developing speed characterizing method.
For solving the problems of the technologies described above, photoresist developing analogy method of the present invention adopts photolithography exposure energy, maximum developing rate normaliztion constant, development threshold energy, coefficient of divergence and minimum developing rate normaliztion constant to characterize the developing rate that changes with exposure energy.
In the photoresist developing analogy method of the present invention, the parameter that employing has physical meaning characterizes, some parameters wherein can be measured acquisition by experiment, the approximating method of its accuracy and the more existing a plurality of independent parameters of match speed increases, while is helpful for the Physical Mechanism that we understand development, is of signal value for the Study on Microcosmic Mechanism of developing.
Description of drawings
The present invention is further detailed explanation below in conjunction with accompanying drawing and embodiment:
Fig. 1 is for adopting the fitting result and the experimental data comparison diagram of photoresist developing simulation of the present invention.
Embodiment
Photoresist developing analogy method of the present invention is that simulation improves to photoresist developing, for the independent development of follow-up processing simulation software, the great convenience that the processing of optical approach effect correction algorithm brings.
Photoresist developing analogy method of the present invention, the parameter that employing has physical meaning characterizes, some parameters wherein can be measured acquisition by experiment, the approximating method of its accuracy and the more existing a plurality of independent parameters of match speed increases, while is helpful for the Physical Mechanism that we understand development, is of signal value for the Study on Microcosmic Mechanism of developing.
Photoresist developing analogy method of the present invention, by maximum developing rate normaliztion constant, the development threshold energy, coefficient of divergence and four physical quantitys of minimum developing rate normaliztion constant come photoresist developing speed is characterized, and relational expression is as follows:
DR(Dose)＝MaxDR*(1/(1/exp((Dose-E0)/BF)+1))+MinDR；
Wherein DR (Dose) representative is with the developing rate of exposure energy variation, and Dose represents exposure energy, and MaxDR represents maximum developing rate normaliztion constant, and E0 represents the development threshold energy, and BF represents coefficient of divergence, and MinDR represents minimum developing rate normaliztion constant.
In concrete enforcement, the initial value of maximum developing rate normaliztion constant MaxDR of the parameter of using in the following formula and minimum developing rate normaliztion constant MinDR can be the maximum that actual measurement obtains, minimum developing rate, the initial value of E0 can be that the photoresist that can make that measures produces the lowest exposure energy that is dissolved in developer solution after the exposure, and BF is any conjecture value between 0～1.The parameter method of fitting that parameter is determined in the following formula can be the most basic numerical value and fits method, such as least square method.Promptly from the conjecture value, set the constant interval of each parameter, such as+/-50%, the numerical value of each parameter of varying cyclically then, calculate the each point difference of two squares sum of DR and experimental data, therefrom select the value of four parameters of the each point difference of two squares sum mean value minimum of DR and experimental data.If the result does not satisfy accuracy requirement, can adjust the constant interval of a reference value or a change parameter, circulation finally obtains the result.Finally obtain fit after four values of consult volume be exactly to characterize four of this photoresist characteristic fixedly values of consult volume, can directly make in the photoetching process simulation afterwards and be used for characterizing photoetching development speed, be used for photoetching process simulation or optics and close on correction.
These 4 parameters can also be used to characterizing the characteristic of photoresist simultaneously, and big more such as MaxDR, it is fast more to develop, MaxDR is more little, do not lose more little (positive glue) behind the exposed areas film after the development, E0 is more little, illustrates that the needed exposure energy of photoresist is low more, the required time shutter is short more, output is high more, and the more little photoresist that then illustrates of BR is responsive more to light, more is applicable to the exposure of dark-field pattern, big more then explanation is insensitive more, more is applicable to the exposure of light field figure.
Above-mentioned least square method only is a kind of in the NUMERICAL MATCH METHOD FOR, and photoresist developing speed of the present invention characterizes that obtaining of each parameter value can be that other numerical value fit method in the formula.The example that the algorithm of least square method is also just implemented not only is confined to this algorithm.
In practical operation, the photoresist developing speed that can measure under each exposure energy obtains experimental data, then according to the maximum that measures, minimum developing rate, the development threshold energy is as initial guess, coefficient of divergence data by experiment carries out pre-estimation, carries out numerical fitting then, obtains four values of consult volume of approaching reality.After four parameters were determined, the development model of this photoresist was shown in following formula.Fig. 1 is the contrast that utilizes curve that this model describes and the data that obtain by experiment, and the formula among visible the present invention can better must characterize developing rate.
Obtain to utilize behind the development model of photoresist the development model of this photoresist to carry out the developing property sign of photoetching process simulation and photoresist.Can also in OPC (optics closes on correction), adopt above-mentioned photoetching process Simulation result, the actual silicon chip data of different graphic are revised, obtain different design configurations through the later actual mask plate figure of OPC.
Claims (4)
1. the method for a photoresist developing simulation is characterized in that: adopt photolithography exposure energy, maximum developing rate normaliztion constant, development threshold energy, coefficient of divergence and minimum developing rate normaliztion constant to characterize the developing rate that changes with exposure energy in the described photoresist developing simulation.
2. the method for photoresist developing simulation as claimed in claim 1 is characterized in that: adopt following formula to characterize developing rate in described photoresist developing simulation:
DR(Dose)＝MaxDR*(1/(1/exp((Dose-E0)/BF)+1))+MinDR；
Wherein DR (Dose) is the developing rate that changes with exposure energy, and Dose is a photolithography exposure energy, and MaxDR is maximum developing rate normaliztion constant, and E0 is the development threshold energy, and BF is a coefficient of divergence, and MinDR is minimum developing rate normaliztion constant.
3. the method for photoetching process simulation, described photoetching process simulation comprises the optical imagery simulation of litho pattern, light acid diffusion simulations, photoresist baking graphic modeling and photoresist developing simulation is characterized in that: adopt the described analogy method of claim 1 in the described photoresist developing simulation.
4. an optics closes on the method for building up of correction model, it is characterized in that: the described optics of setting up closes on and has adopted the described photoetching process analogy method of claim 3 in the model process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100439865A CN101738874B (en) | 2008-11-24 | 2008-11-24 | Method for simulating photoresist development |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100439865A CN101738874B (en) | 2008-11-24 | 2008-11-24 | Method for simulating photoresist development |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101738874A true CN101738874A (en) | 2010-06-16 |
| CN101738874B CN101738874B (en) | 2011-11-02 |
Family
ID=42462501
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008100439865A Active CN101738874B (en) | 2008-11-24 | 2008-11-24 | Method for simulating photoresist development |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101738874B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102122119A (en) * | 2011-03-16 | 2011-07-13 | 东南大学 | Improved quickly-propelling method for simulating three-dimensional etching process of photoresist |
| CN102608869A (en) * | 2011-01-19 | 2012-07-25 | 上海华虹Nec电子有限公司 | Photoetching method under low-k1 condition |
| CN110612483A (en) * | 2017-05-12 | 2019-12-24 | Asml荷兰有限公司 | Method for evaluating resist development |
| JP2020112805A (en) * | 2014-03-17 | 2020-07-27 | ケーエルエー コーポレイション | Model for accurate photoresist profile prediction |
| WO2022104926A1 (en) * | 2020-11-19 | 2022-05-27 | 东方晶源微电子科技（北京）有限公司深圳分公司 | Method for simulating negative tone development photolithography process, negative tone development photoresist model, opc model, and electronic device |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003037050A (en) * | 2001-07-25 | 2003-02-07 | Nikon Corp | Method of simulating resist pattern shape |
| JP2003068625A (en) * | 2001-08-29 | 2003-03-07 | Nikon Corp | Method of simulating shape of resist pattern |
| JP2003077811A (en) * | 2001-09-05 | 2003-03-14 | Nikon Corp | Method of simulating developing rate of chemical amplification type resist |
| JP2004047755A (en) * | 2002-07-12 | 2004-02-12 | Renesas Technology Corp | Exposure condition determining system |
| CN1746878A (en) * | 2004-09-08 | 2006-03-15 | 上海先进半导体制造有限公司 | Parameter adaptive method of analog photoetching process of computer |
| US7494753B2 (en) * | 2005-01-28 | 2009-02-24 | Asml Masktools B.V. | Method, program product and apparatus for improving calibration of resist models used in critical dimension calculation |
-
2008
- 2008-11-24 CN CN2008100439865A patent/CN101738874B/en active Active
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102608869A (en) * | 2011-01-19 | 2012-07-25 | 上海华虹Nec电子有限公司 | Photoetching method under low-k1 condition |
| CN102608869B (en) * | 2011-01-19 | 2014-04-16 | 上海华虹宏力半导体制造有限公司 | Photoetching method under low-k1 condition |
| CN102122119A (en) * | 2011-03-16 | 2011-07-13 | 东南大学 | Improved quickly-propelling method for simulating three-dimensional etching process of photoresist |
| JP2020112805A (en) * | 2014-03-17 | 2020-07-27 | ケーエルエー コーポレイション | Model for accurate photoresist profile prediction |
| JP7002579B2 (en) | 2014-03-17 | 2022-01-20 | ケーエルエー コーポレイション | Model for accurate photoresist contour prediction |
| CN110612483A (en) * | 2017-05-12 | 2019-12-24 | Asml荷兰有限公司 | Method for evaluating resist development |
| CN110612483B (en) * | 2017-05-12 | 2022-06-28 | Asml荷兰有限公司 | Method for evaluating resist development |
| WO2022104926A1 (en) * | 2020-11-19 | 2022-05-27 | 东方晶源微电子科技（北京）有限公司深圳分公司 | Method for simulating negative tone development photolithography process, negative tone development photoresist model, opc model, and electronic device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101738874B (en) | 2011-11-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100576084C (en) | Be used for improving Calibration Method and the equipment that critical dimension is calculated the photoresist model that uses | |
| CN109073985B (en) | Photosensitive chemically amplified resist (PS-CAR) model calibration | |
| CN101738874B (en) | Method for simulating photoresist development | |
| TWI722219B (en) | Method of optimizing a mask and method of forming an integrated circuit | |
| KR102471849B1 (en) | Photosensitized chemically amplified resist (PS-CAR) simulation | |
| US8473271B2 (en) | Fast photolithography process simulation to predict remaining resist thickness | |
| WO2004079632A2 (en) | Method and apparatus of wafer print simulation using hybrid model with mask optical images | |
| TWI703404B (en) | Method, non-transitory computer-readable storage medium, and system for modeling a photoresist profile | |
| US20160085155A1 (en) | Lithography metrology method for determining best focus and best dose and lithography monitoring method using the same | |
| CN105717748B (en) | A kind of back-exposure technique optimization method | |
| CN101738848B (en) | Method for establishing OPC model based on variable light acid diffusion length | |
| US10365557B2 (en) | Compact OPC model generation using virtual data | |
| US9966315B2 (en) | Advanced process control methods for process-aware dimension targeting | |
| JP2009105453A5 (en) | ||
| CN109597281B (en) | Method for generating line width deviation curve, method and device for estimating line width deviation value | |
| KR100294649B1 (en) | Parameter Extraction Method for Simulation of Lithography Process | |
| CN117950280B (en) | Method for establishing optical proximity effect correction model, electronic device and storage medium | |
| JP3181563B2 (en) | Simulation method and simulation apparatus for resist pattern shape | |
| CN101256362A (en) | Method for establishing equivalent diffusion model of chemistry amplitude photoresist | |
| KR20120077081A (en) | Method for negative photo resist simulation and mehtod for manufacturing mask | |
| CN115906543B (en) | Parameter acquisition method based on lithography modeling simulation | |
| Fryer et al. | Fast rigorous modeling of photoresist in lithography | |
| US20100081295A1 (en) | Process model evaluation method, process model generation method and process model evaluation program | |
| KR20070048955A (en) | Method for simulating lithography processes | |
| KR100300874B1 (en) | Method for quantitatively measuring the effects of additives added to chemically amplified photosensitizers |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER NAME: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI |
|
| CP03 | Change of name, title or address |
Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |