CN101734710A - Method for preparing zinc stannate semiconductor functional material - Google Patents

Abstract

The invention discloses a method for preparing a zinc stannate semiconductor functional material, and the method comprises the steps of taking ZnO and SnO2, mixing according to the molar ratio of 2:1, placing in a screw type grinding machine for grinding after evenly mixing, or adding deionized water capable of immersing the mixture into the mixture, grinding in a mortar, evenly mixing, then placing in a baking box for drying at the temperature of 80 DEG C till slightly dry, then further placing in the screw type grinding machine for grinding, and grinding under the control of the frequency of a frequency converter, thereby obtaining Zn2SO4. The method has the advantages of simple process, easy operation, short preparation time, pure phase, good dispersion, uniform particles and the like.

Description

A kind of preparation method of zinc stannate semiconductor functional material

Technical field

The present invention relates to the inorganic materials preparing technical field, specifically a kind of preparation method of zinc stannate semiconductor functional material.

Background technology

Zn ₂SnO ₄Be complex chemical compound, have photo-electrochemical effect, but also have the not available property of some single oxides with spinel structure.Zn ₂SnO ₄(ZTO) as a kind of important semiconductor functional material the high electron mobility jail is arranged, high conductivity, good absorption property has important purposes, at aspects such as gas sensor, electrode materials, optoelectronic equipments wide application prospect is arranged.

Zn ₂SnO ₄Traditional high temperature solid-state method is adopted in the preparation of material mostly, needs earlier raw material to be carried out ball milling, and high-temperature calcination again, higher to temperature requirement, energy expenditure is big, introduces impurity easily, and particle aggregation is serious, and particle is inhomogeneous, and reaction is difficult to control.In recent years, hydrothermal method and low-temperature solid-phase method are synthetic has obtained further developing.Though the hydrothermal method temperature of reaction is low, experiment condition is easy to control, and the reaction times is longer, and operating process is loaded down with trivial details, and facility investment is big, the product bad dispersibility.Though low-temperature solid-phase method equipment is simple, it is temperature required low to compare high temperature solid-state method, needs the synthetic of precursor, and expense of raw materials is more expensive, and the product particle diameter is bigger.

Summary of the invention

The objective of the invention is to utilize the screw ball mill to prepare a kind of zinc stannate semiconductor functional material, its preparation method is simple, efficient, and energy consumption is low, and is with low cost.

The concrete technical scheme that realizes the object of the invention is:

A kind of preparation method of zinc stannate semiconductor functional material is characterized in that this method is: get zinc oxide (ZnO), stannic oxide (SnO ₂) be 2: 1 mixed in molar ratio, thorough mixing evenly after, directly put into the screw grinding machine for grinding;

Perhaps:

Add in mixture and its buried deionized water can be ground in mortar, after mixing, baking is extremely little dried down at 80 ℃ to put into baking oven, puts into the screw grinding machine for grinding again;

In the process of lapping, shredder frequency converter frequency parameter is 40～50Hz, milling time 2～4h; Obtain zinc stannate semiconductor functional material, its general expression is: Zn ₂SnO ₄

Described screw shredder is a Chinese invention patent 200710170826.2.

The zinc stannate semiconductor functional material that the present invention prepares, thing is compared pure, and crystalline form is better, good dispersity, uniform particles, the preparation method is simple, can large-scale commercial production.

Description of drawings

Fig. 1 is the embodiment of the invention 1 gained Zn ₂SnO ₄XRD figure

Fig. 2 is the embodiment of the invention 2 gained Zn ₂SnO ₄XRD figure

Fig. 3 is the embodiment of the invention 3 gained Zn ₂SnO ₄XRD figure

Fig. 4 is the embodiment of the invention 3 gained Zn ₂SnO ₄SEM figure

Embodiment 1

A, take by weighing ZnO 42.3284g; SnO ₂39.1846g.

B, with above-mentioned substance, ground and mixed is even in mortar.

C, put into the screw shredder then, it is 40HZ that the frequency converter frequency parameter is set, ground 4 hours Zn ₂SnO ₄

Present embodiment gained target product Zn ₂SnO ₄XRD figure see accompanying drawing 1; Present embodiment gained Zn ₂SnO ₄Thing compare pure.

Embodiment 2

A, take by weighing ZnO 42.3284g; SnO ₂39.1846g.

B, with above-mentioned substance, add the 20ml deionized water as solvent (its add-on is advisable mixture can be uniformly dispersed), ground and mixed is even in mortar.

C, mixture is put into baking oven 80 ℃ of down bakings 2 hours.

D, put into the screw shredder then, it is 45HZ that the frequency converter frequency parameter is set, ground 3 hours Zn ₂SnO ₄

Present embodiment gained Zn ₂SnO ₄XRD figure see accompanying drawing 2; Present embodiment gained Zn ₂SnO ₄Time shorten, thing is compared pure, dephasign is less.

Embodiment 3

A, take by weighing ZnO 42.3284g; SnO ₂39.1846g.

B, with above-mentioned substance, add the 20ml deionized water as solvent (its add-on is advisable mixture can be uniformly dispersed), ground and mixed is even in mortar.

C, mixture is put into baking oven 80 ℃ of down bakings 2 hours.

D, put into the screw shredder then, it is 50HZ that the frequency converter frequency parameter is set, ground 2 hours Zn ₂SnO ₄

Present embodiment gained Zn ₂SnO ₄XRD and SEM see accompanying drawing 3-4; Present embodiment gained Zn ₂SnO ₄Time shorter, thing is compared pure, dephasign seldom.

Claims (1)

1. the preparation method of a zinc stannate semiconductor functional material is characterized in that this method is: get zinc oxide (ZnO), stannic oxide (SnO ₂) be 2: 1 mixed in molar ratio, thorough mixing evenly after, directly put into the screw grinding machine for grinding;

Perhaps:

Add in mixture and its buried deionized water can be ground in mortar, after mixing, baking is extremely little dried down at 80 ℃ to put into baking oven, puts into the screw grinding machine for grinding again;

In the process of lapping, shredder frequency converter frequency parameter is 40～50Hz, milling time 2～4h; Obtain zinc stannate semiconductor functional material.

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