CN101728760B - Regular polygon microcavity bistable semiconductor laser - Google Patents
Regular polygon microcavity bistable semiconductor laser Download PDFInfo
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- CN101728760B CN101728760B CN2008102241064A CN200810224106A CN101728760B CN 101728760 B CN101728760 B CN 101728760B CN 2008102241064 A CN2008102241064 A CN 2008102241064A CN 200810224106 A CN200810224106 A CN 200810224106A CN 101728760 B CN101728760 B CN 101728760B
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- regular polygon
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- output waveguide
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Abstract
The invention discloses a regular polygon microcavity bistable semiconductor laser which is formed by etching a slab waveguide and comprises a regular polygon resonant cavity and an output waveguide, wherein the output waveguide is connected or coupled with the regular polygon resonant cavity. By utilizing the invention, because the relation between the quality factor and the coupling efficiency of different symmetry modes in the regular polygon microcavity is different along with the change of the waveguide, the width of the output waveguide is controlled to enable the different symmetry modes to have the same threshold gain and different coupling efficiency, thus the output bistable characteristic of the regular polygon microcavity laser can be realized.
Description
Technical field
The present invention relates to semiconductor laser field; Relate in particular to a kind of regular polygon microcavity bistable semiconductor laser; More specifically; The present invention relates to have the laser regular polygonal microcavity laser of output waveguide, wherein different symmetric mode competitions and the coupling delivery efficiency difference on output waveguide thereof make this laser regular polygonal microcavity laser have the output bistable behavior.
Background technology
The bistable semiconductor laser that planar technique is made has important use as optical storage and light trigger in the photon integrated technology.Along with the progress and the innovation of modern information technologies, photon is integrated to be integrated with great development with photoelectron.High efficiency, low-power and microminiaturization are the directions of present photoelectron development, and most of traditional bistable semiconductor lasers are difficult to realize this goal at present.
Optical microcavity is realized the strong restriction to light field through total internal reflection; Produced the Echo Wall (Wispering-Gallery of the very high quality factor in the chamber; WG) pattern; Have characteristics such as very little mode volume and high-quality-factor, suitable making extremely low threshold value, superintegrated micro-cavity laser and array thereof, aspects such as, light interconnection integrated at light, optical communication and optical neural network have a wide range of applications.
Therefore; The bistable laser of based semiconductor microcavity has caused that also people pay close attention to widely; As the microdisk laser (S.Ishii that is coupled; Etc.Modal characteristics and bistability in twinmicrodisk photonic molecule lasers.IEEE J.Sel.Topics Quantum Electron.12; Pp.71-77 (2006)) and little cyclic laser (M.Sorel, etc.Unidirectional bistability insemiconductor waveguide ring lasers.Appl.Phys.Lett.80, pp.3051-3053 (2002)) etc.Wherein, the coupling microdisk laser is based on saturable absorption, and little cyclic laser is to utilize the mode competition between counterclockwise and clockwise pattern to realize the bistable output characteristic.But microdisk laser and little cyclic laser are difficult to obtain directed output; In order to obtain directed output; We have developed the positive triangle micro-cavity laser (Y.Z.Huang of band output waveguide; Etc.Room-temperature continuous-wave electrically injected InP/GaInAsPequilateral-triangle-resonator lasers.IEEE Photon.Technol.Lett.19, pp.963-965 (2007)) and square micro-cavity laser (Y.Z.Huang, etc.Directionalemission InP/GaInAsP square-resonator microlasers; Opt.Lett.33, (2008)).
And adopt the regular polygon microcavity of band output waveguide to make bistable semiconductor laser in the present invention.The quality factor of different symmetry patterns and coupling efficiency have different relationships with the variation of waveguide in the regular polygon microcavity, thereby can realize the output bistable behavior of laser regular polygonal microcavity laser through the control duct width.
Summary of the invention
The technical problem that (one) will solve
In view of this, main purpose of the present invention is to provide a kind of regular polygon microcavity bistable semiconductor laser, to realize the output bistable behavior.
(2) technical scheme
For achieving the above object; The invention provides a kind of regular polygon microcavity bistable semiconductor laser; This semiconductor laser through being etched into, comprises the resonant cavity and an output waveguide of a regular polygon by planar waveguide, and this output waveguide is connected with the resonant cavity of this regular polygon or is coupled.
In the such scheme; This planar waveguide is made up of lower limit layer, active area and upper limiting layer; When etching forms this semiconductor laser on this planar waveguide; The perimeter of regular polygon and waveguide is etched into lower limit layer or substrate, and the polygon of etching and output waveguide do not obtain light output respectively as resonant cavity and directed outgoing route at the other end of output waveguide.
In the such scheme, said etching adopts dry etching or wet chemical etching technique mode to carry out; Active area adopts III-V family body material, SQW or quanta point material, and limiting layer adopts corresponding semiconductor limiting material.
In the such scheme, this resonant cavity is an equilateral triangle, and an end of output waveguide is connected with triangular apex or is coupled, and obtains light output at the other end of output waveguide, output waveguide and simultaneously etching shaping identical with the resonant cavity material.
In the such scheme; This resonant cavity is a square; One end of output waveguide is connected with square mid point on one side or is coupled; Perhaps be connected or be coupled, obtain light output, output waveguide and simultaneously etching shaping identical with the resonant cavity material at the other end of output waveguide with position that square departs from mid point on one side.
In the such scheme, this semiconductor laser makes symmetry have identical gain for threshold value and different delivery efficiencies with antisymmetric mode through the selection of output waveguide width, thereby realizes bistable output.
(3) beneficial effect
This regular polygon microcavity bistable semiconductor laser provided by the invention; Because the quality factor of different symmetry patterns and coupling efficiency have different relationships with the variation of waveguide in the regular polygon microcavity; Width through the control output waveguide makes different symmetry patterns have identical gain for threshold value and different coupling efficient, so can realize the output bistable behavior of laser regular polygonal microcavity laser.
Description of drawings
For better explanation the object of the invention and structure and the effect that can reach, mainly be that example is done a detailed description to the present invention below in conjunction with embodiment and accompanying drawing with the equilateral triangle, wherein:
Fig. 1 is the structural representation of regular polygon microcavity bistable semiconductor laser provided by the invention; Wherein, a is the equilateral triangle microcavity bistable semiconductor laser, and b is the square micro-cavity bistable semiconductor laser;
Fig. 2 utilizes 2 dimension Finite Difference-Time Domain branch (finite-difference time-domain; FDTD) method is carried out the change curve of the quality factor of different symmetric TE moulds in the equilateral triangle microcavity that numerical computations obtains along with the output waveguide width; The resonant cavity length of side is 10 μ m; Refractive index is 3.2 in the chamber, and refractive index is 1 outside the chamber;
Fig. 3 utilizes two-dimentional FDTD method single-mode launching TE
e 0.33The Hz field distribution of mould, in the output waveguide subregion, magnetic field has been exaggerated 5 times, and the output waveguide width is 0.7 μ m;
Fig. 4 utilizes two-dimentional FDTD method single-mode launching TE
o 0.33The Hz field distribution of mould, in the output waveguide subregion, magnetic field has been exaggerated 5 times, and the output waveguide width is 0.7 μ m;
Use the variation relation of the power output of the InGaAsP/InP equilateral triangle microcavity bistable semiconductor laser of measuring in Fig. 5 experiment with the increase and the reduction of injection current; The length of side of this laser is 30 μ m, output waveguide width 2 μ m, and the measurement temperature is 236K.
Embodiment
For making the object of the invention, technical scheme and advantage clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, to further explain of the present invention.
This regular polygon microcavity bistable semiconductor laser provided by the invention, it is to consider the influence of the output waveguide of different in width to the different symmetry pattern quality factors of micro-cavity laser, thereby selects suitable structural parameters, to realize the output bistable behavior.This semiconductor laser through being etched into, comprises the resonant cavity and an output waveguide of a regular polygon by planar waveguide, and this output waveguide is connected with the resonant cavity of this regular polygon or is coupled.
This planar waveguide is made up of lower limit layer, active area and upper limiting layer; When etching forms this semiconductor laser on this planar waveguide; The perimeter of regular polygon and waveguide is etched into lower limit layer or substrate; And the polygon of etching and output waveguide do not obtain light output respectively as resonant cavity and directed outgoing route at the other end of output waveguide.Said etching adopts dry etching or wet chemical etching technique mode to carry out, and active area adopts III-V family body material, SQW or quanta point material, and limiting layer adopts limiting material.
When this resonant cavity was equilateral triangle, an end of output waveguide was connected with triangular apex or is coupled, and obtained light output at the other end of output waveguide, output waveguide and simultaneously etching shaping identical with the resonant cavity material.
This resonant cavity is a square; One end of output waveguide is connected with square mid point on one side or is coupled; Perhaps be connected or be coupled, obtain light output, output waveguide and simultaneously etching shaping identical with the resonant cavity material at the other end of output waveguide with position that square departs from mid point on one side.
This semiconductor laser makes symmetry have identical gain for threshold value and different delivery efficiencies with antisymmetric mode through the selection of output waveguide width, thereby realizes bistable output.
As shown in Figure 1, the equilateral triangle microcavity bistable semiconductor laser of band output waveguide is made up of equilateral triangle resonant cavity and output waveguide, the planar waveguide structure of resonant cavity for constituting by lower limit layer, active area and upper limiting layer, and its active area can be the various III-V body material InGaAsP of family; GaAs, InGaAs, InGaN; InAs, and InGaAsP/InGaAsP, InGaAs/InGaAsP; InGaAs/GaAs, InGaN/GaN SQW, InGaAs/GaAs; GaAs/InP, InGaN/GaN quantum dot etc., the bound preparative layer is corresponding limiting material.Adopt dry etching or wet chemical etching technique to lower limit layer or substrate in positive triangle perimeter, and uncorroded equilateral triangle zone is as resonant cavity, has output waveguide to be connected or be coupled at drift angle of equilateral triangle resonant cavity.Electrode can be produced on not the equilateral triangle top and the substrate surface of etching.Around the resonant cavity can be air or other low-index materials.The vertex position and coupled that one end of output waveguide is arranged on equilateral triangle connects or is coupled, and obtains directional light output from the output waveguide other end, output waveguide generally can be identical with the resonant cavity material and simultaneously etching be shaped.Its width can also can be 1 to 2 times of excitation wavelength less than excitation wavelength.
The material of square micro-cavity laser resonant cavity adopts and equilateral triangle microcavity identical materials, and output waveguide is positioned at the mid point on a limit of square, also can depart from mid point in other position.Around the resonant cavity can be air or other low-index materials.Output waveguide generally can and simultaneously etching shaping identical with the resonant cavity material.
Following emphasis is that the present invention will be described for example with the equilateral triangle microcavity.
Fig. 2 utilizes 2 dimension Finite Difference-Time Domain branch (finite-difference time-domain; FDTD) method is carried out in the equilateral triangle microcavity that numerical simulation calculation obtains symmetry and antisymmetry TE mould quality factor along with the variation of output waveguide width; The resonant cavity length of side is 10 μ m; Refractive index is 3.2 in the chamber, and refractive index is 1 outside the chamber.Wherein " e " represents symmetric mode, and " o " represents anti symmetric mode.The WG mould has very high quality factor in the equilateral triangle resonant cavity, and the quality factor of other patterns will be much smaller than these two kinds of patterns.Result of calculation shows that along with the output waveguide broadband increases, the quality factor of symmetric mode and anti symmetric mode alternately descends, and can make symmetric mode and anti symmetric mode have same quality factor through the width of selecting output waveguide, thereby realizes the bistable output characteristic.
Fig. 3, the 4th utilizes two-dimentional FDTD method single-mode launching TE
e 0.33And TE
o 0.33The Hz field distribution of mould, in the output waveguide subregion, electric field has been exaggerated 5 times, and the output waveguide width is 0.7 μ m respectively.Under the both of these case, very strong luminous power output is arranged all in output waveguide.
Fig. 5 is with the variation relation of the power output of measuring InGaAsP/InP equilateral triangle microcavity bistable semiconductor laser with the increase and the reduction of injection current.The length of side of this laser is 30 μ m, and the output waveguide width is 2 μ m, and the measurement temperature is 236K.Injection current is a continuous current, when injection current is realized bistable output at 28 to 44 milliamperes.
Above-described specific embodiment; The object of the invention, technical scheme and beneficial effect have been carried out further explain, and institute it should be understood that the above is merely specific embodiment of the present invention; Be not limited to the present invention; All within spirit of the present invention and principle, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (4)
1. regular polygon microcavity bistable semiconductor laser; It is characterized in that; This semiconductor laser through being etched into, comprises the resonant cavity and an output waveguide of a regular polygon by planar waveguide, and this output waveguide is connected with the resonant cavity of this regular polygon or is coupled;
Wherein, this resonant cavity is that the length of side is the equilateral triangle of 10 μ m, and an end of output waveguide is connected with triangular apex or is coupled, and obtains light output at the other end of output waveguide, output waveguide and simultaneously etching shaping identical with the resonant cavity material;
This semiconductor laser makes symmetry have identical gain for threshold value and different delivery efficiencies with antisymmetric mode through the selection of output waveguide width, thereby realizes bistable output.
2. regular polygon microcavity bistable semiconductor laser according to claim 1; It is characterized in that; This planar waveguide is made up of lower limit layer, active area and upper limiting layer, and when etching formed this semiconductor laser on this planar waveguide, the perimeter of regular polygon and waveguide was etched into lower limit layer or substrate; And the polygon of etching and output waveguide do not obtain light output respectively as resonant cavity and directed outgoing route at the other end of output waveguide.
3. regular polygon microcavity bistable semiconductor laser according to claim 2 is characterized in that, said etching adopts dry etching or wet chemical etching technique mode to carry out.
4. regular polygon microcavity bistable semiconductor laser according to claim 2 is characterized in that, active area adopts III-V family body material, SQW or quanta point material, and limiting layer adopts corresponding semiconductor limiting material.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5392308A (en) * | 1993-01-07 | 1995-02-21 | Sdl, Inc. | Semiconductor laser with integral spatial mode filter |
| CN1318887A (en) * | 2000-04-17 | 2001-10-24 | 中国科学院半导体研究所 | Photoelectric device with equiplateral triangular micro optical cavity resonator |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5392308A (en) * | 1993-01-07 | 1995-02-21 | Sdl, Inc. | Semiconductor laser with integral spatial mode filter |
| CN1318887A (en) * | 2000-04-17 | 2001-10-24 | 中国科学院半导体研究所 | Photoelectric device with equiplateral triangular micro optical cavity resonator |
Non-Patent Citations (4)
| Title |
|---|
| M.F.Booth,etc.Spatial beam switching and bistability in a diode ring laser.《APPLIED PHYSICS LETTERS》.2000,第76卷(第9期),1095. * |
| yong-zhen huang,etc.Mode characteristics fo equilateral triangle optical resonators.《IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS》.2006,第12卷(第1期), * |
| Yong-zhen huang,etc.room-temperature continuous-wave electrically injected InP-GaInAsP equilateral-triangle-resonator lasers.《IEEE PHOTONICS TECHNOLOGY LETTERS》.2007,第19卷(第13期),963. * |
| 黄永箴,国伟华.正三角形及正方形微光学腔模式特性研究.《前沿进展》.2004,第33卷(第7期),517. * |
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