CN101724901A - Method for preparing aluminum-induced crystallized polycrystalline silicon film in hydrogen plasma atmosphere - Google Patents
Method for preparing aluminum-induced crystallized polycrystalline silicon film in hydrogen plasma atmosphere Download PDFInfo
- Publication number
- CN101724901A CN101724901A CN200910244845A CN200910244845A CN101724901A CN 101724901 A CN101724901 A CN 101724901A CN 200910244845 A CN200910244845 A CN 200910244845A CN 200910244845 A CN200910244845 A CN 200910244845A CN 101724901 A CN101724901 A CN 101724901A
- Authority
- CN
- China
- Prior art keywords
- hydrogen plasma
- film
- aluminum
- annealing
- crystallization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000001257 hydrogen Substances 0.000 title claims abstract description 48
- 229910052739 hydrogen Inorganic materials 0.000 title claims abstract description 48
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 title claims abstract description 47
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 47
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 44
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims abstract description 30
- 239000010408 film Substances 0.000 claims abstract description 63
- 238000000137 annealing Methods 0.000 claims abstract description 56
- 238000002425 crystallisation Methods 0.000 claims abstract description 34
- 230000008025 crystallization Effects 0.000 claims abstract description 32
- 229920005591 polysilicon Polymers 0.000 claims abstract description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 10
- 239000010409 thin film Substances 0.000 claims abstract description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 6
- 238000000151 deposition Methods 0.000 claims abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims abstract description 4
- 239000002184 metal Substances 0.000 claims abstract description 4
- 150000002431 hydrogen Chemical class 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 4
- 238000000354 decomposition reaction Methods 0.000 claims description 2
- 230000005284 excitation Effects 0.000 claims 1
- 238000002161 passivation Methods 0.000 abstract description 3
- 238000009776 industrial production Methods 0.000 abstract description 2
- 239000012528 membrane Substances 0.000 description 25
- 238000002360 preparation method Methods 0.000 description 16
- 239000004411 aluminium Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 238000001069 Raman spectroscopy Methods 0.000 description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 229910021486 amorphous silicon dioxide Inorganic materials 0.000 description 4
- 229960001866 silicon dioxide Drugs 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 238000010792 warming Methods 0.000 description 3
- 229960005363 aluminium oxide Drugs 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000007715 excimer laser crystallization Methods 0.000 description 1
- -1 flow is 15sccm Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Landscapes
- Recrystallisation Techniques (AREA)
- Photovoltaic Devices (AREA)
Abstract
一种氢等离子体氛围中铝诱导晶化多晶硅薄膜的制备方法，将衬底上沉积包括非晶硅薄膜、二氧化硅薄膜和金属铝薄膜制得的多层薄膜，在450℃～550℃下氢等离子氛围中退火，较短时间即可获得完全晶化了的多晶硅薄膜。该发明不仅将传统的退火晶化工艺、氢等离子体晶化与钝化工艺合二为一，并且降低了铝诱导晶化的退火时间，减少了热预算，可以较显著地降低成本；本发明通过氢等离子体氛围铝诱导晶化制备的多晶硅薄膜材料，可用于制备多晶硅薄膜太阳电池、平板显示器件中的低温多晶硅薄膜晶体管等器件，具有工艺简化、热预算少、成本低等特点，是一种适用于大规模工业生产的多晶硅薄膜材料的晶化方法。
A method for preparing a polycrystalline silicon film induced by aluminum in a hydrogen plasma atmosphere, depositing a multilayer film made of an amorphous silicon film, a silicon dioxide film, and a metal aluminum film on a substrate, at 450°C to 550°C Annealing in a hydrogen plasma atmosphere can obtain a fully crystallized polysilicon film in a relatively short period of time. This invention not only combines the traditional annealing crystallization process, hydrogen plasma crystallization and passivation process into one, but also reduces the annealing time of aluminum induced crystallization, reduces the thermal budget, and can significantly reduce the cost; the present invention The polysilicon thin film material prepared by aluminum-induced crystallization in a hydrogen plasma atmosphere can be used to prepare polysilicon thin film solar cells, low-temperature polysilicon thin film transistors in flat panel display devices and other devices. It has the characteristics of simplified process, small thermal budget, and low cost. A crystallization method for polysilicon thin film materials suitable for large-scale industrial production.
Description
[technical field]
The invention belongs to the technology of preparing of polycrystalline silicon film material, the preparation method of aluminum-induced crystallized polycrystalline silicon film in particularly a kind of hydrogen plasma atmosphere.
[background technology]
Polysilicon membrane, has lower cost with respect to silicon single crystal, have higher mobility and stability with respect to amorphous silicon membrane, it is just attracting the very big concern of scientific circles in the large area electron device wide application prospect in solar cell, thin film transistor, the transmitter particularly.Regrettably, the technology of preparing of polysilicon membrane all has its limitation separately at present: thus the film of the method that has preparation is because grain-size is less or the relatively poor electric property of homogeneity is not good enough, as plasma reinforced chemical vapour deposition (Plasma Enhanced ChemicalVapor Deposition---the PECVD) microcrystalline silicon film of low temperature preparation, its grain-size and mobility can not show a candle to the silicon film of polycrystalline structure; Other, as low-pressure chemical vapor deposition (Low Pressure ChemicalVapor Deposition---LPCVD), (Atmospheric PressureChemical Vapor Deposition---APCVD), solid phase crystallization (Solid PhaseCrystallization---SPC) etc. needs higher crystallization temperature to aumospheric pressure cvd; Excimer laser crystallization (Excimer Laser Annealing ELA) for another example, and rapid thermal annealing (Rapid Thermal Annealing---RTA) wait then apparatus expensive.The metal-induced crystallization technology is to utilize combining of non-crystalline silicon and some metal (as Ni, Al, Cu etc.), thereby reduce its crystallization temperature and can realize the low temperature preparation, it has that technology is simple, cost is low and characteristics such as annealing process is short, makes it be more suitable for being applied to industrial production.Wherein, aluminum-induced crystallized can not only be at low temperature (below 600 degrees centigrade) complete crystallization amorphous silicon membrane, and the polysilicon of preparation also has the advantage of big crystal grain and 100 preferred orientations, suitable to especially inculating crystal layer low-temperature epitaxy growth polysilicon, this technology is widely used in polysilicon solar cell.Regrettably, even aluminum-induced crystallized annealing still needs long annealing time, be unfavorable for the industrialization of polysilicon solar cell and polycrystalline SiTFT substrate under lower temperature.In addition, the crystal boundary of the polysilicon membrane after crystallization and crystal grain inside are contained higher defect state usually, have a strong impact on the performance and the stability of polysilicon membrane and device.Then hydrogen treatment is one of effective ways of passivation polysilicon film device defect state, and method commonly used is that polysilicon membrane is annealed under the atmosphere of hydrogen plasma.
[summary of the invention]
The objective of the invention is at above-mentioned existing problems, the preparation method of aluminum-induced crystallized polycrystalline silicon film in a kind of hydrogen plasma atmosphere is provided, this method utilizes plasma body to reduce aluminum-induced crystallized temperature, shorten the time of realizing the complete crystallization process, realize aluminum-induced crystallized annealing and post-passivation synchronously, improve the aluminum-induced crystallized polycrystalline silicon film quality, reduce the energy waste and the cost of preparation process, for a new road is opened up in the preparation of polysilicon membrane.
Technical scheme of the present invention:
The preparation method of aluminum-induced crystallized polycrystalline silicon film in a kind of hydrogen plasma atmosphere, step is as follows:
1) deposition comprises that amorphous silicon membrane, silica membrane and metallic aluminium film make multilayer film on substrate;
2) above-mentioned multilayer film are put into annealing furnace, annealing furnace is vacuumized and annealing furnace is warming up to annealing temperature;
3) feed hydrogen and produce hydrogen plasma, multilayer film are exposed in the hydrogen plasma atmosphere by the hydrogen plasma generation source that is arranged in the annealing furnace;
4) under annealing furnace homo(io)thermism condition, anneal;
5) close hydrogen gas plasma the source takes place, stop logical hydrogen, secondary vacuum pumping is treated to take out from annealing furnace after the nature cooling, can make the polycrystalline silicon film material of complete crystallization.
Vacuum tightness in the described annealing furnace is (200～800) * 10
-3Torr.
Described annealing temperature is 450 ℃～550 ℃.
Described hydrogen plasma generation source is radio frequency glow discharge, ultra-high frequency glow discharge, microwave-excitation, heat is auxiliary or the short range or the long-range hydrogen plasma source of the generation of heated filament decomposition method.
Described hydrogen flowing quantity is 15sccm～60sccm.
Described annealing time is for being no less than 2 hours.
Advantage of the present invention and effect: the present invention carries out aluminum-induced crystallized annealing process in the atmosphere of hydrogen plasma, and traditional annealing and back hydrogenation process are united two into one, and has simplified technology, has reduced cost; In annealing process, hydrogen atom in the hydrogen plasma can be in the annealing time shorter than the conventional aluminum revulsive crystallization crystallizing amorphous silicon film, utilize hydrogen plasma atmosphere to quicken aluminum-induced crystallized annealing process, can reduce aluminum-induced crystallized annealing time effectively; The present invention is by the polycrystalline silicon film material of the aluminum-induced crystallized preparation of hydrogen plasma atmosphere, can be used for preparing the devices such as low-temperature polysilicon film transistor in polysilicon thin-film solar battery, the flat-panel display device, having characteristics such as work simplification, heat budget is few, cost is low, is a kind of crystallization method that is applicable to the polycrystalline silicon film material of large-scale commercial production.
[description of drawings]
Fig. 1 a prepares amorphous silicon membrane, silica membrane and aluminium film three-decker film schematic cross-section successively on the substrate.
Fig. 1 b prepares aluminium film, silica membrane and amorphous silicon membrane three-decker film schematic cross-section successively on the substrate.
Fig. 2 is thin 550 ℃ of annealing times of the aluminum-induced crystallized polycrystalline silicon of embodiment 1 preparation and silicon film crystallization rate corresponding relation figure.
Fig. 3 is thin 550 ℃ of annealing times of the aluminum-induced crystallized polycrystalline silicon of embodiment 2 preparations and silicon film crystallization rate corresponding relation figure.Among the figure: 1. substrate 2. amorphous silicon membranes 3. silica membranes 4. aluminium films
[embodiment]
Embodiment 1:
The preparation method of aluminum-induced crystallized polycrystalline silicon film in a kind of hydrogen plasma atmosphere, step is as follows:
1) on large-area glass substrate 1, adopt the method for low-pressure chemical vapor deposition (LPCVD), at 550 ℃ of amorphous silicon membrane layers 2 that deposit 100nm is thick, from the preparation chamber, take out amorphous silicon membrane, natural oxidation in air, the silica membrane 3 that its surface forms a layer thickness 3nm adopts the method for vacuum-evaporation to form the thick aluminium film 4 of 100nm then on amorphous silicon layer, and its structure as shown in Figure 1a;
2) above-mentioned multilayer film are put into annealing furnace, annealing furnace adopts radio frequency glow discharge short range hydrogen plasma equipment, and annealing furnace is evacuated to 100 * 10
-6Below the torr, annealing furnace is warming up to 550 degrees centigrade;
3) feed hydrogen, flow is 30sccm, and chamber vacuum is adjusted into 800 * 10
-3Torr opens radio frequency (RF) power supply, and power setting is 30W, and substrate/amorphous silicon/silicon dioxide/aluminium multilayer film will be exposed in the plasma body this moment;
4) under annealing furnace homo(io)thermism condition, annealed 4 hours;
5) close hydrogen gas plasma the source takes place, stop logical hydrogen, be evacuated to 100 * 10
-6Below the torr, treat from annealing furnace, to take out after the nature cooling, can make the polycrystalline silicon film material of complete crystallization.
Technique effect detects: with the above-mentioned polycrystalline silicon film material that makes with 85% phosphoric acid dip 10 minutes, clean up at the residual aluminium of silicon film surface, with model be Raman (Raman) spectrograph of Renishaw in Via record film the Raman spectrogram through 520,510,480 3 these matches of peak height, with formula Xc=(I
520+ I
510)/(I
520+ I
510+ I
480) calculating the silicon film crystallization rate, the 4 hours crystallization rates that obtain annealing under hydrogen plasma atmosphere are 100%, promptly make the polysilicon membrane of complete crystallization.The corresponding relation figure of shown in Figure 2 is substrate/amorphous silicon/silicon dioxide/aluminium multilayer film annealing time and crystallization rate under hydrogen plasma atmosphere and under the vacuum, compare with the polysilicon membrane of the ability acquisition in 10 hours of annealing under vacuum condition complete crystallization, show that this method can reduce aluminum-induced crystallized annealing time, reduce heat budget.
Embodiment 2:
The preparation method of aluminum-induced crystallized polycrystalline silicon film in a kind of hydrogen plasma atmosphere, step is as follows:
1) on large-area glass substrate 1, adopt the method for vacuum-evaporation on amorphous silicon layer, to form the thick aluminum film layer of 100nm 4, the thick silica membrane layer 3 of method deposition 10nm of using plasma chemical vapour deposition (PECVD), adopt the method for low-pressure chemical vapor deposition (LPCVD) again, at 550 ℃ of amorphous silicon membrane layers 2 that deposit 100nm is thick, its structure is shown in Fig. 1 b;
2) above-mentioned multilayer film are put into annealing furnace, annealing furnace adopts radio frequency glow discharge short range hydrogen plasma equipment, and annealing furnace is evacuated to 100 * 10
-6Below the torr, annealing furnace is warming up to 450 degrees centigrade;
3) feed hydrogen, flow is 15sccm, and cavity air pressure is adjusted into 200 * 10
-3Torr opens radio frequency (RF) power supply, and power setting is 10W, and substrate/aluminium/silicon-dioxide/non-crystalline silicon multilayer film will be exposed in the plasma body this moment;
4) under annealing furnace homo(io)thermism condition, annealed 5 hours;
5) close hydrogen gas plasma the source takes place, stop logical hydrogen, be evacuated to 100 * 10
-6Below the torr, treat from annealing furnace, to take out after the nature cooling, can make the polycrystalline silicon film material of complete crystallization.
Technique effect detects: the phosphoric acid dip with 85% 10 minutes, clean up at the residual aluminium of silicon film surface, with model be Raman (Raman) spectrograph of Renishaw in Via record film the Raman spectrogram through 520,510,480 3 these matches of peak height, with formula Xc=(I
520+ I
510)/(I
520+ I
510+ I
480) calculating the silicon film crystallization rate, the 5 hours crystallization rates that obtain annealing under hydrogen plasma atmosphere are 100%, promptly make the polysilicon membrane of complete crystallization.The corresponding relation figure of shown in Figure 2 is substrate/aluminium/silicon-dioxide/non-crystalline silicon multilayer film annealing time and crystallization rate under hydrogen plasma atmosphere and under the vacuum, compare with the polysilicon membrane of the ability acquisition in 13 hours of annealing under vacuum condition complete crystallization, show that this method can reduce aluminum-induced crystallized annealing time, reduce heat budget.
Claims (6)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102448454A CN101724901B (en) | 2009-12-17 | 2009-12-17 | A preparation method of aluminum-induced crystallization polysilicon film in a hydrogen plasma atmosphere |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102448454A CN101724901B (en) | 2009-12-17 | 2009-12-17 | A preparation method of aluminum-induced crystallization polysilicon film in a hydrogen plasma atmosphere |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101724901A true CN101724901A (en) | 2010-06-09 |
| CN101724901B CN101724901B (en) | 2012-05-23 |
Family
ID=42446428
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009102448454A Expired - Fee Related CN101724901B (en) | 2009-12-17 | 2009-12-17 | A preparation method of aluminum-induced crystallization polysilicon film in a hydrogen plasma atmosphere |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101724901B (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102010062386A1 (en) | 2010-12-03 | 2012-06-06 | Evonik Degussa Gmbh | Method for converting semiconductor layers |
| DE102010062383A1 (en) | 2010-12-03 | 2012-06-06 | Evonik Degussa Gmbh | Method for converting semiconductor layers |
| CN102709404A (en) * | 2012-06-21 | 2012-10-03 | 上海大学 | Method for preparing polycrystalline silicon film by carrying out induced crystallization on amorphous silicon film by using metallic copper under low temperature |
| CN102789989A (en) * | 2012-08-15 | 2012-11-21 | 京东方科技集团股份有限公司 | Polycrystalline silicon transistor, display device and manufacturing method of polycrystalline silicon transistor |
| CN103311105A (en) * | 2013-05-16 | 2013-09-18 | 上海大学 | Method for inducing crystallization of amorphous silicon thin film into polycrystalline silicon thin film by aluminum at low temperature |
| CN104975260A (en) * | 2015-08-05 | 2015-10-14 | 大连大学 | Preparation method of polycrystalline silicon film with high crystallization rate |
| WO2015165164A1 (en) * | 2014-04-30 | 2015-11-05 | 京东方科技集团股份有限公司 | Low temperature poly-silicon thin film transistor and manufacturing method thereof, array substrate and display device |
| CN106835289A (en) * | 2016-12-30 | 2017-06-13 | 武汉华星光电技术有限公司 | A kind of device and method for preparing low temperature polycrystalline silicon |
| CN109943823A (en) * | 2019-03-07 | 2019-06-28 | 上海米蜂激光科技有限公司 | The method for preparing a-Si:H film based on hydrogen plasma process |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1727525A (en) * | 2005-03-04 | 2006-02-01 | 中国科学院长春光学精密机械与物理研究所 | A method for preparing polysilicon |
| CN100999388B (en) * | 2006-12-30 | 2011-02-09 | 南开大学 | Preparation method of crystallized polysilicon thin film induced by surface modification solution |
-
2009
- 2009-12-17 CN CN2009102448454A patent/CN101724901B/en not_active Expired - Fee Related
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102010062386A1 (en) | 2010-12-03 | 2012-06-06 | Evonik Degussa Gmbh | Method for converting semiconductor layers |
| DE102010062383A1 (en) | 2010-12-03 | 2012-06-06 | Evonik Degussa Gmbh | Method for converting semiconductor layers |
| WO2012072401A1 (en) | 2010-12-03 | 2012-06-07 | Evonik Degussa Gmbh | Method for converting semiconductor layers |
| WO2012072406A1 (en) | 2010-12-03 | 2012-06-07 | Evonik Degussa Gmbh | Method for converting semiconductor layers |
| CN102709404A (en) * | 2012-06-21 | 2012-10-03 | 上海大学 | Method for preparing polycrystalline silicon film by carrying out induced crystallization on amorphous silicon film by using metallic copper under low temperature |
| CN102789989A (en) * | 2012-08-15 | 2012-11-21 | 京东方科技集团股份有限公司 | Polycrystalline silicon transistor, display device and manufacturing method of polycrystalline silicon transistor |
| CN103311105A (en) * | 2013-05-16 | 2013-09-18 | 上海大学 | Method for inducing crystallization of amorphous silicon thin film into polycrystalline silicon thin film by aluminum at low temperature |
| WO2015165164A1 (en) * | 2014-04-30 | 2015-11-05 | 京东方科技集团股份有限公司 | Low temperature poly-silicon thin film transistor and manufacturing method thereof, array substrate and display device |
| US9882057B2 (en) | 2014-04-30 | 2018-01-30 | Boe Technology Group Co., Ltd. | Low temperature poly-silicon thin film transistor and manufacturing method thereof, array substrate and display device |
| CN104975260A (en) * | 2015-08-05 | 2015-10-14 | 大连大学 | Preparation method of polycrystalline silicon film with high crystallization rate |
| CN104975260B (en) * | 2015-08-05 | 2018-05-01 | 大连大学 | A kind of preparation method of high crystallization rate polysilicon membrane |
| CN106835289A (en) * | 2016-12-30 | 2017-06-13 | 武汉华星光电技术有限公司 | A kind of device and method for preparing low temperature polycrystalline silicon |
| CN109943823A (en) * | 2019-03-07 | 2019-06-28 | 上海米蜂激光科技有限公司 | The method for preparing a-Si:H film based on hydrogen plasma process |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101724901B (en) | 2012-05-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101724901B (en) | A preparation method of aluminum-induced crystallization polysilicon film in a hydrogen plasma atmosphere | |
| CN105826362B (en) | A kind of gallium oxide nano-wire array and preparation method thereof | |
| CN107640763B (en) | Preparation method of single-layer single crystal graphene | |
| CN101665905A (en) | Aluminum-induced low temperature preparation method of large grain size polysilicon film | |
| CN104495829A (en) | Method for preparing graphene film on low-temperature substrate | |
| CN102002668B (en) | Low-temperature physical vapor deposition device and method for polysilicon thin film | |
| CN102243991A (en) | Method for inducing amorphous silicon film with tin to be crystallized into polycrystalline silicon film | |
| CN110228806A (en) | The method for preparing graphene film using plasma reinforced chemical vapour deposition method | |
| CN101363118B (en) | Method for growing silicon carbide film on silicon substrate | |
| CN109666913A (en) | A kind of nitridation magnesium film and preparation method thereof | |
| CN101660131B (en) | Method for preparing hydrogenated silicon film by utilizing magnetron sputtering | |
| CN102709404A (en) | Method for preparing polycrystalline silicon film by carrying out induced crystallization on amorphous silicon film by using metallic copper under low temperature | |
| CN101632153B (en) | Method for silicon thin film formation | |
| CN111676450B (en) | Hexagonal boron nitride thick film based on ion beam sputtering deposition and preparation method and application | |
| CN102041552A (en) | Method for preparing polysilicon membrane | |
| CN103346072A (en) | Method for manufacturing polycrystalline silicon thin film | |
| CN108060458B (en) | A kind of preparation device and method of non-polar indium nitride nanocrystalline thin film | |
| CN100357500C (en) | Method for preparing microlite silicon | |
| CN102605337A (en) | Preparation method of polycrystal Si films through Ge low-temperature induced crystallization | |
| CN106653572B (en) | Preparation method of polysilicon thin film and optoelectronic device | |
| CN102790133B (en) | Method for preparing microcrystal silicon film according to multi-step growing method | |
| CN116356280A (en) | Method for preparing hexagonal boron nitride film by microwave plasma chemical vapor deposition system | |
| CN101660132B (en) | A kind of method for preparing hydrogenated silicon carbon film by magnetron sputtering | |
| CN1124364C (en) | Process for preparing ultra-thin silicon nitride film by electron cyclone, resonance, microwave and plasma | |
| CN1727525A (en) | A method for preparing polysilicon |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120523 Termination date: 20151217 |
|
| EXPY | Termination of patent right or utility model |